1223 results about "Lead structure" patented technology

An LED package includes a LED structure that outputs light in a pattern about an axis and an optical coupling device with a central axis. The coupling device is positioned relative to the LED structure and accepts light from the LED. The coupling device includes a first dielectric interface surface that is substantially cylindrical with respect to the central axis, and a reflecting surface. The first dielectric interface surface accepts a first portion of light from the LED structure and directs it toward the reflecting surface. The reflecting surface accepts the light from the first dielectric interface surface and directs it toward the first dielectric interface surface in a direction substantially perpendicular to the central axis.

Embodiments of the invention are directed to semiconductor die packages. One embodiment of the invention is directed to a semiconductor die package including, (a) a semiconductor die including a first surface and a second surface, (b) a source lead structure including protruding region having a major surface, the source lead structure being coupled to the first surface, (c) a gate lead structure being coupled to the first surface, and (d) a molding material around the source lead structure and the semiconductor die, where the molding material exposes the second surface of the semiconductor die and the major surface of the source lead structure.

A light emitting diode (LED) structure includes a plurality of devices arranged side by side on a support layer. Each device includes a first conductivity type semiconductor nanowire core and an enclosing second conductivity type semiconductor shell for forming a pn or pin junction that in operation provides an active region for light generation. A first electrode layer extends over the plurality of devices and is in electrical contact with at least a top portion of the devices to connect to the shell. The first electrode layer is at least partly air-bridged between the devices.

A light-emitting diode (LED) structure with electrostatic discharge (ESD) protection is described. The LED includes a substrate, a patterned semiconductor layer, a first electrode and a second electrode. The patterned semiconductor layer is disposed over the substrate, and is divided into at least a first island structure and a second island structure. The first electrode and the second electrode are connected between the first island structure and the second island structure. A shunt diode is formed by the first electrode, the second electrode and the second island structure. The shunt diode is connected in parallel to the LED with an inverse voltage compared to the LED. In the LED structure of the invention, the first island structure and the second island structure are manufactured simultaneously by the epitaxy procedure. Therefore, the LED could be protected from damage due to electrostatic discharge (ESD).

A white light generating unit includes an LED structure and a lens structure. The LED structure generates a light. The lens structure has a convex lens or a concave lens. The lens structure has a fluorescent member that receives the light from the LED structure to emit a white light.

One embodiment of the present invention provides a method for fabricating light-emitting diodes (LEDs). The method includes fabricating an InGaAlN-based multilayer LED structure on a conductive substrate. The method further includes etching grooves of a predetermined pattern through the active region of the multilayer LED structure. The grooves separate a light-emitting region from non-light-emitting regions. In addition, the method includes depositing electrode material on the light-emitting and non-light-emitting regions, thereby creating an electrode. Furthermore, the method includes depositing a passivation layer covering the light-emitting and non-light-emitting regions. Moreover, the method includes removing the passivation layer on the electrode to allow the non-light-emitting regions which are covered with the electrode material and the passivation layer to be higher than the light-emitting region and the electrode, thereby protecting the light-emitting region from contact with test equipment.

An LED structure includes a first substrate; an adhering layer formed on the first substrate; first ohmic contact layers formed on the adhering layer; epi-layers formed on the first ohmic contact layers; a first isolation layer covering the first ohmic contact layers and the epi-layers at exposed surfaces thereof; and first electrically conducting plates and second electrically conducting plates, both formed in the first isolation layer and electrically connected to the first ohmic contact layers and the epi-layers, respectively. The first trenches or the second trenches allow the LED structure to facilitate complex serial/parallel connection so as to achieve easy and various applications of the LED structure in the form of single structures under a high-voltage environment.

A light emitting device, a wafer for making the same, and method for fabricating the same are disclosed. The device and wafer include a first layer of a first conductivity type, an active layer, and a layer of a second conductivity type. The active layer overlies the first layer, the active layer generating light. The second layer overlies the active layer, the second layer having a first surface in contact adjacent to the active layer and a second surface having a surface that includes features that scatter light striking the second surface. A layer of transparent electrically conducing material is adjacent to the second surface and covered by a first layer of a dielectric material that is transparent to the light generated by the active layer. A mirror layer that has a reflectivity greater than 90 percent is deposited on the first layer of dielectric material.

LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

A LED structure, a lighting fixture and a method of providing white light illumination. The LED structure comprises a substrate; a light emitting area defined on the substrate as a cavity; a first type of light emitting semiconductor source with bactericidal characteristics mounted in the cavity; a second type of light emitting semiconductor source mounted in the cavity with ability to excite the wavelength conversion material to generate white light; and a wavelength conversion material layer formed on top of the light emitting semiconductor sources. The invention enables disinfection by a lighting source or a luminaire visibly apparent to human as a white light source that is neither harmful to a human nor creates discomfort.

The present invention generally provides apparatus and methods for forming LED structures. In one embodiment, a method for fabricating a compound nitride-based semiconductor structure is provided. The method comprises forming a Group III-nitride buffer layer over one or more substrates in a first processing chamber, transferring the one or more substrates having the Group III-nitride buffer layer deposited thereon into a second processing chamber without exposing the one or more substrates to an ambient atmospheric environment, and forming a bulk Group III-V layers over the Group III-nitride buffer layer in the second processing chamber. In one example, the first processing chamber may be a MOCVD, PVD based chamber, CVD based chamber, ALD based chamber, sputtering chamber, or any other vapor deposition chamber. The second processing chamber may be a MOCVD or HVPE chamber.

The invention provides a method which uses a graphic substrate to improve the illumination efficiency of a GaN-based efficiency, comprising the steps as follows: a silicon dioxide film is deposited on a sapphire substrate; a photoresist graphic array is optically etched; the photoresist graphic array is taken as a mask so as to etch the silicon dioxide film with the graphic structure; the silicon dioxide film with the graphic structure is taken as a mask so as to etch the sapphire substrate and the graphics is etched onto the sapphire substrate; the sapphire substrate is thoroughly cleaned so as to form a pyramid structure with triangular sections; a low-temperature nucleation layer grows on the graphic sapphire substrate; temperature is continuously increased on the low-temperature nucleation layer so as to grow an n-typed mixed GaN layer and an array structure which has low dislocation density and V-shaped holes on the surface; a multiple quantum well layer and a p-typed material layer required when the LED structure material grows continue to grow; furthermore, the final surface is led to still have the array structure with V-shaped holes.

Methods of fabricating flexible, free-standing LED structures are provided. An LED structure can be formed on a sapphire substrate, and the surface of the LED structure can then be coated with epoxy and attached to a rigid supporting substrate. A laser lift-off process can be performed using an ultraviolent beam from a high-power pulsed-mode laser and a shadow mask, causing at least a portion of the LED structure to separate from the sapphire substrate. The structure can then be immersed in an acetone bath to dissolve the epoxy and separate the structure from the supporting substrate.

The present invention is intended to provide a light-emitting diode (LED) structure which can be easily transferred onto another substrate, a transfer assembly whose adhesive strength with LED structures can be maintained in spite of repetitive transfer processes, LED structures and a transfer assembly for selectively transferring the LED structures, and a transfer method using the same.

A non-leaded integrated circuits package system is provided including etching differential height lead structures having inner leads at a paddle height, providing mold locks at the bending points of the differential height lead structures, etching an elevated paddle at a same height as the inner leads, mounting a first integrated circuit on the elevated paddle, and electrically connecting first electrical interconnects between the first integrated circuit and the inner leads.

The disclosure relates to a method of collective manufacturing of light-emitting diode (LED) devices comprising formation of elemental structures, each comprising an n-type layer, an active layer and a p-type layer, the method comprising: —reduction of the lateral dimensions of part of each elemental LED structure; —formation of a portion of insulating material on the sides of the elemental structures;—formation of n-type electrical contact pads and p-type electrical contact pads; —deposition of a conductive material layer; on the elemental structures and polishing of the conductive material layer; and—bonding by molecular adhesion of a second substrate on the polished surface of the structure.

A left ventricular stimulation lead construction and a technique for lead placement that provides for improved anchoring and positioning of the electrode located on the distal end of the lead, while also including a method for readjusting the positioning of the lead as necessary. The lead includes a small diameter guide wire wherein the distal end of the guide wire serves as an anchor for the pacing lead. The lead structure includes a central hollow lumen to allow passage of the guide wire and a locking mechanism positioned on the proximal end of the pacing lead to fix the ends of the guide wire and pacing lead relative to one another. The method provides for advancing the guide wire until it is anchored, positioning the pacing lead along the guide wire into the desired position relative to the cardiac tissue, releasably fixing the lead relative to the guide wire, wherein the guide wire is permanently retained to serve as an anchor.