2241 results about "Multiple quantum" patented technology

A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1−XN and InYGa1−YN, where 0≦X<1 and 0≦Y<1 and X is not equal to Y. The semiconductor device may be a light emitting diode with a Group III nitride based active region. The active region may be a multiple quantum well active region.

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

A vertical-cavity surface-emitting laser (VCSEL) comprising a low-loss thin metal contact and current spreading layer within the optical cavity that provides for improved ohmic contact and lateral current distribution, a substrate including a plano-concave optical cavity, a (Ga,In,Al)N multiple quantum well (MQW) active region contained within the optical cavity that generates light when injected by an electrical current, and an integrated micromirror fabricated onto the substrate that provides for optical mode control of the light generated by the active region. A relatively simple process is used to fabricate the VCSEL.

Disclosed is a semiconductor light-emitting element, comprising an n-type-cladding layer; a light guide layer positioned on the n-type cladding layer; a multiple quantum well structure active layer positioned on the light guide layer; a p-type carrier overflow prevention layer positioned on the active layer and having an impurity concentration of 5×1018 cm−3 to not more than 3×1019 cm−3; a p-type light guide layer positioned on the p-type carrier overflow prevention layer and-having an impurity concentration of 1×1018 cm−3 or more and less-than that of the p-type carrier overflow prevention layer; and a p-type cladding layer positioned on the p-type light guide layer and having a band gap narrower than the p-type carrier overflow prevention layer, and a method of manufacturing the same.

A method of slice selective multiple quantum magnetic resonance imaging of an object is disclosed. The method is effected by implementing the steps of (a) applying a radiofrequency pulse sequence selected so as to select a coherence of an order n to the object, wherein n is zero, a positive or a negative integer other than ±1; (b) applying magnetic gradient pulses, so as to select a slice of the object to be imaged arid to create an image; and (c) acquiring a radiofrequency signal resulting from the object, so as to generate a magnetic resonance slice image of the object. The method provides slice selective multiple quantum magnetic resonance images of yet unprecedented quality in terms of contrast. The method is particularly useful for imaging connective tissues.

The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The structure includes a first n-type cladding layer of AlxInyGa1−x−yN, where 0≦x≦1 and 0≦y<1 and (x+y)≦1; a second n-type cladding layer of AlxInyGa1−x−yN, where 0≦x≦1 and 0≦y<1 and (x+y)≦1, wherein the second n-type cladding layer is further characterized by the substantial absence of magnesium; an active portion between the first and second cladding layers in the form of a multiple quantum well having a plurality of InxGa1−xN well layers where 0<x<1 separated by a corresponding plurality of AlxInyGa1−x−yN barrier layers where 0≦x≦1 and 0≦y≦1; a p-type layer of a Group III nitride, wherein the second n-type cladding layer is positioned between the p-type layer and the multiple quantum well; and wherein the first and second n-type cladding layers have respective bandgaps that are each larger than the bandgap of the well layers. In preferred embodiments, a Group III nitride superlattice supports the multiple quantum well.

A method of manufacturing a solar cell by providing a first semiconductor substrate for the epitaxial growth of semiconductor material; forming a first subcell on the substrate with a first semiconductor material with a first band gap and a first lattice constant; forming a second subcell with a second semiconductor material with a second band gap and a second lattice constant, wherein the second band gap is less than the first band gap and the second lattice constant is greater than the first lattice constant; the second subcell including a strain balanced quantum well structure; and forming a lattice constant transition material positioned between the first subcell and the second subcell, the lattice constant transition material having a lattice constant that changes gradually from the first lattice constant to the second lattice constant.

A GaN / AlN superlattice is formed over a GaN / sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN / AlN superlattice mitigates the strain between a GaN / sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.

The present invention discloses a double-reflective-layer gallium nitride-based flip-chip light-emitting diode with both a distributed Bragg reflector and a metal reflective layer on its side and a fabrication method thereof. The light-emitting diode includes: a sapphire substrate; a buffer layer, an N-GaN layer, a multiple-quantum-well layer and a P-GaN layer stacked on the sapphire substrate in that order; a transparent conductive layer formed on the P-GaN layer; a distributed Bragg reflector formed over a side of the epitaxial layer and the transparent conductive layer; a metal reflective layer formed on the DBR; a P-type ohmic contact electrode formed on the transparent conductive layer; and an N-type ohmic contact electrode formed on the exposed N-GaN layer, wherein the P-type ohmic contact electrode and the N-type ohmic contact electrode are bonded to a heat dissipation substrate through a metal conductive layer and a ball bonder. By arranging a double reflection structure including a DBR and a metal reflective layer on the sloping side of the LED chip, the good reflectivity of the reflective layers can be fully utilized, thereby improving the light-emission efficiency of the LED.

A semiconductor sensor, solar cell or emitter or a precursor therefore having a substrate and textured semiconductor layer deposited onto the substrate. The layer can be textured as grown on the substrate or textured by replicating a textured substrate surface. The substrate or first layer is then a template for growing and texturing other semiconductor layers from the device. The textured layers are replicated to the surface from the substrate to enhance light extraction or light absorption. Multiple quantum wells, comprising several barrier and quantum well layers, are deposited as alternating textured layers. The texturing in the region of the quantum well layers greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. This is the case in nitride semiconductors grown along the polar [0001] or [000-1] directions.

A method of operating a solar cell is provided in which strain balanced multiple quantum well stacks containing greater than 30 quantum wells disposed between bulk semi-conductor regions having a band gap differences between the deepest well of the stack and the bulk semi-conducting region of greater than 60 mev is irradiated with radiation having an intensity of greater than 100 suns. Photons are absorbed with and outside of the quantum well stack to generate electron hole pairs recombination of electrons and holes is substantially only via a radiative recombination mechanism.

The invention relates to GaN-based Single chip white light emitting diode epitaxial material comprising a substrate and also comprising an initial growth layer, an intrinsic GaN buffer layer, an n-type GaN layer, a stress relaxation layer, an InGaN multiple quantum well structure light emitting layer, a p-type AlGaN sandwich layer and a p-type GaN layer which grow in sequence on the substrate. Thestress relaxation layer is an InGaN / GaN superlattice stress modulation layer which comprises InGaN layers and GaN layers, which are grown alternatively; the InGaN layers and GaN layers have the growth cycle of 6-500 and the corresponding thickness of 10 nm to 3 Mum; and the In components in the InGaN layers are in the range of 1-35 percent. Because the stress-relaxed InGaN / GaN superlattice stressmodulation layer is added between the n-type GaN layer and a multiple quantum light emitting layer, the In segregation effect is strengthened, InGaN quantum dots with different components are formed,and the mixing of different-wave light emitted by the InGaN quantum dots realizes the white light emitting. The cost of the white light emitting diode is reduced radically, the light emitting efficiency and the light using efficiency are increased and the integral performance of the white light emitting diode is improved.

The invention relates to an optically pumped multilayered modulator having surface-normal geometry. The multilayer structure comprises an absorber section through which an optical signal (401) to be modulated is coupled from an input (401) to an output (400). The multilayer structure further comprises control means for supplying a control signal for controlling the transmission characteristics of the absorber section. The control signal is generated by an in-plane waveguide-type laser integrated monolithically with the saturable absorption region. The in-plane control laser includes waveguide regions (405) and multiple-quantum-well layers (409) used as a gain medium. The laser beam is adapted to travel through the absorber section in order to modulate the transmission characteristics of the absorber section.

This invention teaches two new families of Si-based Ge / SnxGe1-x heterodiode and multiple quantum well (MQW) photonic devices: (1) band-to-band photodetectors, lasers, emitters, amplifiers and modulators for the 1.5 to 12 μm wavelength range; (2) intersubband photodetectors, lasers, emitters and modulators for 12 to 100 μm operation. The bipolar band-to-band devices have applications within the 1.5-2.2, 3-5 and 8-to-12 μm bands. The unipolar intersubband group has longwave infrared and terahertz applications. All strained-layer devices are grown a relaxed SnySizGe1-y-z buffer layer—a virtual substrate (VS) grown directly upon a silicon wafer by unique LT UHV-CVD. The VS provides a low-defect atomic template for subsequent heteroepitaxy and is an essential enabling technique for engineering tensile and compressive strain within the Ge / SnxGe1-x MQW by selecting the VS lattice parameter to be approx midway between the layer lattices.

The present invention is a tunable semiconductor laser for swept source optical coherence tomography, comprising a semiconductor substrate; a waveguide on top of said substrate with multiple sections of different band gap engineered multiple quantum wells (MQWs); a multiple of distributed feedback (DFB) gratings corresponding to each said band gap engineered MWQs, each DFB having a different Bragg grating period; and anti-reflection (AR) coating deposited on at least the laser emission facet of the laser to suppress the resonance of Fabry-Perot cavity modes. Each DFB MQWs section can be activated and tuned to lase across a fraction of the overall bandwidth as is achievable for a single DFB laser and all sections can be sequentially activated and tuned so as to collectively cover a broad bandwidth, or simultaneously activated and tuned to enable a tunable multi-wavelength laser. The laser hence can emit either a single lasing wavelength or a multiple of lasing wavelengths and is very suitable for swept-source OCT applications.

An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.

A Mach-Zehnder type optical modulator having a ridge structure including a multiple quantum well wave guide layer expending both in a passive region and in an active phase modulation region on which an electrical field is applied, wherein the wave guide layer is selectively grown by a metal organic vapor phase epitaxy with use of dielectric stripe mask patterns having a large width in the active phase modulation region and a small width in the passive region so that the wave guide layer has a band gap wavelength equal to or near a wavelength of an incidental light in the active phase modulation region and a smaller band gap wavelength smaller than the wavelength of the incidental light in the passive region.

The invention discloses a method for enhancing the antistatic ability of GaN-based light-emitting diode. The epitaxial wafer structure of the light-emitting diode sequentially comprises an underlay, alow-temperature buffer layer, an unadulterated GaN high-temperature buffer layer, an aluminum gallium nitride / GaN superlattice structure, the unadulterated GaN high-temperature buffer layer, an N type contact layer, an N type GaN conductive layer, a light-emitting layer multiple quantum well structure MQW, a P type aluminum gallium nitride electric barrier layer, a P type GaN conductive layer and a P type contact layer in a sequence from down to up. In the invention, the aluminum gallium nitride / GaN superlattice periodic structure is inserted in the unalloyed GaN high temperature buffer layer. The insertion of the aluminum gallium nitride / GaN superlattice periodic structure can effectively improve crystal quality of materials, thereby enhancing the antistatic ability of the GaN-based light-emitting diode and improving the reliability and the stability of devices.

Disclosed is a semiconductor device. The semiconductor device includes a first type nitride-based cladding layer formed on a growth substrate having an insulating property, a multi quantum well nitride-based active layer formed on the first type nitride-based cladding layer and a second type nitride-based cladding layer, which is different from the first type nitride-based cladding layer and is formed on the multi quantum well nitride-based active layer. A tunnel junction layer is formed between the undoped buffering nitride-based layer and the first type nitride-based cladding layer or / and formed on the second type nitride-based cladding layer.

Disclosed is a light emitting diode (LED) having an active region of a multiple quantum well structure in which well layers and barrier layers are alternately laminated between a GaN-based N-type compound semiconductor layer and a GaN-based P-type compound semiconductor layer. The LED includes a middle barrier layer having a bandgap relatively wider than the first barrier layer adjacent to the N-type compound semiconductor layer and the n-th barrier layer adjacent to the P-type compound semiconductor layer. The middle barrier layer is positioned between the first and n-th barrier layers. Accordingly, positions at which electrons and holes are combined in the multiple quantum well structure to emit light can be controlled, and luminous efficiency can be enhanced. Furthermore, an LED is provided with enhanced luminous efficiency using a bandgap engineering or impurity doping technique.

A GaN / AlN superlattice is formed over a GaN / sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN / AlN superlattice mitigates the strain between a GaN / sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.

The present invention provides a nitride semiconductor light emitting device with an active layer of the multiple quantum well structure, in which the device has an improved luminous intensity and a good electrostatic withstanding voltage, thereby allowing the expanded application to various products. The active layer 7 is formed of a multiple quantum well structure containing InaGa1−aN (0≦a<1). The p-cladding layer 8 is formed on said active layer containing the p-type impurity. The p-cladding layer 8 is made of a multi-film layer including a first nitride semiconductor film containing Al and a second nitride semiconductor film having a composition different from that of said first nitride semiconductor film. Alternatively, the p-cladding layer 8 is made of single-layered layer made of AlbGa1−bN (0≦b≦1). A low-doped layer 9 is grown on the p-cladding layer 8 having a p-type impurity concentration lower than that of the p-cladding layer 8. A p-contact layer is grown on the low-doped layer 9 having a p-type impurity concentration higher than those of the p-cladding layer 8 and the low-doped layer 9.

A nitride semiconductor light emitting device includes an emission layer (106) having a multiple quantum well structure where a plurality of quantum well layers and a plurality of barrier layers are alternately stacked. The quantum well layer is formed of XN1-x-y-zAsxPySbz (0≦x≦0.15, 0≦y≦0.2, 0≦z≦0.05, x+y+z>0) where X represents one or more kinds of group III elements. The barrier layer is formed of a nitride semiconductor layer containing at least Al.

Layered and film structures for improving the performance of semiconductor devices include single and multiple quantum wells and double heterostructures and superlattice structures.

It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate 1, an n-type GaN layer 2, an n-type AlGaN cladding layer 3, a n-type GaN guide layer 4, an InGaN multiple quantum well active layer 5, an undoped-GaN guide layer 6, a p-type AlGaN electron overflow suppression layer 7, a p-type GaN guide layer 8, a SiO2 blocking layer 9, an Ni / ITO cladding layer electrode 10 as a transparent electrode, a Ti / Au pad electrode 11, and a Ti / Al / Ni / Au electrode 12. The SiO2 blocking layer 9 is formed above the InGaN multiple quantum well active layer 5 so as to have an opening. The Ni / ITO cladding layer electrode 10 is formed inside the opening, and which is transparent for the light from the InGaN multiple quantum well active layer, and serves as a cladding layer.

An Al0.95Ga0.05N:Mg (25 nm) single electron barrier can stop electrons having energy levels lower than the barrier height. Meanwhile, a 5-layer Al0.95Ga0.05N (4 nm) / Al0.77Ga0.23N (2 nm) MQB has quantum-mechanical effects so as to stop electrons having energy levels higher than the barrier height. Thus, electrons having energy levels higher than the barrier height can be blocked by making use of multiquantum MQB effects upon electrons. The present inventors found that the use of an MQB allows blocking of electrons having higher energy levels than those blocked using an SQB. In particular, for InAlGaN-based ultraviolet elements, AlGaN having the composition similar to that of AlN is used; however, it is difficult to realize a barrier having the barrier height exceeding that of AlN. Therefore, MQB effects are very important. Accordingly, it becomes possible to provide element technology for further improving deep UV light emission intensity using, as a light-emitting layer material, an AlGaInN-based material and, in particular, an AlGaN-based material.

A semiconductor light emitting device including means for reducing strain and carrier overflow caused by injection of a number of carriers in semiconductor light emitting devices using GaN is provided. The semiconductor light emitting device includes a multi-quantum barrier formed by depositing an AlGaN / GaN double layer a predetermined number of times, or a strain-compensating multiple quantum barrier formed at either the upper or lower sides of an active layer by depositing an AlGaN / InGaN double layer a predetermined number of times, and does not need a p-type clad layer.

The invention discloses a surface roughening method of a p-GaN layer or an ITO layer in a GaN-based LED chip structure. The method comprises the following steps: (1) growing a low-temperature GaN buffer layer, an undoped GaN layer, an n-GaN layer, a multiple quantum well layer, a stack-up structure of the p-GaN layer and an extended layer evaporating ITO current on a semiconductor substrate in sequence; and (2) preparing monolayer nickel nano particles as a mask, and preparing a roughening structure on the p-GaN layer or the ITO layer. The method of the invention has simple steps, low cost, good roughening effect; by carrying out surface roughening on the p-GaN layer or the ITO layer of the GaN-based LED by the method of the invention, the total reflection of the photon in the chip can be inhibited and the light outgoing efficiency of the devices can be improved.

Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor / air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.