858 results about "Multiple quantum" patented technology

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

The invention relates to the technical field of semiconductors, and particularly discloses a multiband LED chip and a preparation method thereof, and a white light LED light source, the LED chip comprises a light-emitting layer, and the light-emitting layer comprises a first cyan light multi-quantum well layer, a second long-wave blue light multi-quantum well layer, a third short-wave blue light multi-quantum well layer and a fourth purple light multi-quantum well layer which are sequentially stacked in the epitaxial direction; the first cyan light multi-quantum well layer, the second long-wave blue light multi-quantum well layer, the third short-wave blue light multi-quantum well layer and the fourth purple light multi-quantum well layer are each of a periodic structure formed by alternately stacking well layers and barrier layers, and the light-emitting wavelengths of the first cyan light multi-quantum well layer, the second long-wave blue light multi-quantum well layer, the third short-wave blue light multi-quantum well layer and the fourth purple light multi-quantum well layer are sequentially decreased. And the forbidden band widths of the barrier layers are sequentially decreased. According to the LED chip, the overall excitation efficiency can be effectively improved, and the output full-spectrum white light LED light source is higher in color rendering index, better in stability, less in damage to human eyes and high in light emitting efficiency.

The invention discloses an image classification method based on a multi-quantum filtering convolutional neural network, and the method comprises the steps: compressing a pixel value of an obtained image, and coding the compressed pixel value into a corresponding quantum state through a quantum revolving door; and inputting the quantum state into a quantum convolutional neural network to obtain an image label predicted value, training the quantum convolutional neural network by using the predicted value and a loss function to obtain a trained quantum convolutional neural network, the quantum convolutional neural network including a quantum convolutional layer, a quantum measurement attention layer, a pooling layer and a full connection layer, the quantum convolution layer comprises G quantum filters; and inputting an image needing to be detected into the trained quantum convolutional neural network to complete image classification. According to the method, the multi-topology quantum convolutional neural network is combined with a quantum bit measurement attention mechanism, so that the problem of great loss of entanglement information in a measurement stage is effectively solved, the method can better adapt to a quantum calculation environment, and the advantages of quantum calculation are exerted.

A GaN-based blue-green LED epitaxial structure, relating to the field of semiconductor photoelectric devices. The GaN-based blue-green LED epitaxial structure comprises a substrate, and a buffer layer, a dislocation regulation layer, a U-GaN layer, an N-GaN layer, a multi-quantum-well layer, an electron blocking layer and a P-GaN layer which are sequentially stacked on the substrate, wherein the dislocation regulation layer is of a periodic structure with the number of periods ranging from 2 to 10, and each period comprises a GaN layer and an Si-doped GaN layer that are sequentially stacked. The crystal quality of the epitaxial structure can be improved, thereby improving the light-emitting efficiency and the antistatic performance of the blue-green LED based on the epitaxial structure.

A quantum computing service provides a quantum algorithm development kit that enables a customer to define a quantum task, a quantum algorithm, or a quantum circuit using an intermediate representation. The quantum computing service is then configured to automatically translate the quantum task, quantum algorithm, or quantum circuit into a specific representation specific to a particular quantum computing technology selected by the customer to be used to execute the customer's quantum task, quantum algorithm, or quantum circuit.

The invention belongs to the technical field of network communication, and particularly relates to an SPA single packet authentication method based on quantum cryptography, which comprises the following steps: a client and a server establish a shared quantum key pool, and the quantum key pool comprises a plurality of quantum key segments with different life cycles; the client selects one key segment in the quantum key pool, and generates a dynamic key according to the session ID and the random number seed; acquiring a data abstract according to the single packet data; generating an authentication label containing a quantum watermark according to the data abstract and the quantum random number; the client sends a data packet containing the single packet data, the authentication tag and the key fragment index to the server; the server obtains a local key fragment from a local quantum key pool according to the key fragment index, generates a local dynamic key in combination with the same session ID and the random number seed, and performs hash operation on single packet data to obtain a local authentication tag; and the server carries out authentication comparison on the local authentication tag and the received authentication tag.

The invention relates to the technical field of semiconductor devices, in particular to a low-working-current-density green light Micro-LED epitaxial structure and a preparation method thereof. The epitaxial structure comprises a substrate, a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum well light-emitting layer and a P-type semiconductor layer. The electron blocking layer is not arranged on the multi-quantum-well light-emitting layer, the multi-quantum-well light-emitting layer comprises four sub-layers including a first light blue light multi-quantum-well layer, a second blue light multi-quantum-well layer, a third green light multi-quantum-well layer and a fourth light blue light multi-quantum-well layer, and the In component content in the third green light multi-quantum-well layer is larger than that in other layers. The third cyan light multi-quantum well layer is a main light-emitting unit and is not provided with an electron blocking layer, so that the blocking effect on hole injection can be eliminated, the hole injection efficiency of the P-type semiconductor layer is remarkably improved, and the matching degree of electron hole concentration in a multi-quantum well light-emitting layer region is improved.

The invention relates to the technical field of semiconductor devices, in particular to a multiband light-emitting diode epitaxial structure and a preparation method thereof. The multiband light-emitting diode epitaxial structure sequentially comprises a substrate, a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum well light-emitting layer, an electron blocking layer and a P-type semiconductor layer from bottom to top, the multi-quantum well light-emitting layer comprises four sub-layers, namely a first long-wave cyan light multi-quantum well layer, a second short-wave cyan light multi-quantum well layer, a third long-wave blue light multi-quantum well layer and a fourth short-wave blue light multi-quantum well layer which are sequentially stacked and grown from bottom to top, and the light-emitting wavelengths are sequentially decreased. Meanwhile, by combining the design of the sub-layers of the multiple quantum well light-emitting layers and through the synergistic effect of exciting light of all wave bands, the overall excitation efficiency can be improved, full-spectrum white light is output, the full-spectrum white light is closer to sunlight, the light-emitting efficiency is high, the color rendering property is good, the stability is better, and harm to human eyes is small.

The invention provides a quantum well, a multi-quantum well epitaxial structure and a preparation method thereof, and belongs to the field of semiconductor lasers. The invention provides a quantum well which is of a multi-layer structure and comprises alternate quantum barrier layers and quantum well layers. The array substrate further comprises a gradient buffer layer. The adjacent quantum barrier layer and quantum well layer are combined through a gradient buffer layer; the bottom layer and the top layer in the multi-layer structure are quantum barrier layers; in a unit formed by the connected quantum barrier layer, gradual change buffer layer and quantum well layer, with the quantum barrier layer as the beginning and the adjacent quantum well layer as the end, the size of the gradual change buffer layer in the horizontal direction is gradually reduced, the emission wavelength of the gradual change buffer layer is gradually increased in the direction from beginning to end, and the emission wavelength of the gradual change buffer layer is gradually increased. The initial emission wavelength of the gradient buffer layer is consistent with the emission wavelength of the quantum barrier, and the final emission wavelength of the gradient buffer layer is smaller than the emission wavelength of the quantum well. The quantum well has a high carrier migration rate, a high refractive index and a high optical confinement factor.

The invention provides a patterned photonic crystal laser and a preparation method thereof, the laser comprises a substrate, and a first mask layer, a photonic crystal layer and a second mask layer which are sequentially deposited on the substrate, a light emitting area is etched in the central area of the second mask layer, and transparent conductive layers are deposited on the surface of the second mask layer and the light emitting area; a p-annular electrode is arranged on the surface of the transparent conductive layer on the second mask layer, and an n-annular electrode is arranged below the substrate; the photonic crystal layer is composed of a nanorod array and a polymer filled in gaps of nanorods; holes distributed in a patterned array are etched in the surface of the first mask layer, and nanorods are epitaxially grown in hole areas; the nanorod is formed by sequentially depositing a substrate contact layer, a first waveguide layer, a multi-quantum well layer, a second waveguide layer, a coating layer and a component gradient layer. According to the invention, through collaborative design optimization of all the layers, emission of laser with specific wavelength and preparation of a laser emitting laser with single longitudinal mode, narrow linewidth and stable wavelength are realized.

The invention discloses a Micro-LED epitaxial wafer and a preparation method thereof, a multi-quantum well light-emitting layer of the Micro-LED epitaxial wafer comprises a first sub-layer, a second sub-layer and a third sub-layer which are stacked in sequence, and each of the first sub-layer, the second sub-layer and the third sub-layer comprises a pre-well protection layer, an InGaN quantum well layer, a post-well protection layer and a quantum barrier layer which are periodically and alternately stacked; the In component proportion of the InGaN quantum well layer in the first sub-layer and the third sub-layer is smaller than the In component proportion of the InGaN quantum well layer in the second sub-layer; the well front protection layer comprises a first InGaN well front protection layer, an AlGaN well front protection layer and a second InGaN well front protection layer which are stacked in sequence, and the well rear protection layer comprises an InGaN well rear protection layer, an AlGaN well rear protection layer and a GaN well rear protection layer which are stacked in sequence. According to the invention, the light-emitting brightness of the Micro-LED can be improved.

The invention discloses a red light Micro light emitting diode epitaxial wafer and a preparation method thereof. The epitaxial wafer comprises a GaAs substrate, an N-type layer, a multi-quantum well active layer and a P-type layer which are sequentially arranged from bottom to top, the multi-quantum well active layer comprises a plurality of AlGaInP quantum well layers and quantum barrier layers which are alternately arranged, a hole injection layer is inserted between at least part of quantum well structures, and the hole injection layer is composed of a first N-type doped sub-layer, a P-type doped sub-layer and a second N-type doped sub-layer which are connected in sequence; the materials of the three sub-layers are (Al < x > Ga < 1-x >) < 0.5 > In < 0.5 > P (x is greater than or equal to 0.5 and less than or equal to 0.9), and the doping concentration is in gradient distribution along the thickness direction. By introducing the N-P-N structure hole injection layer, the hole injection efficiency is improved, electron leakage and Mg diffusion are inhibited, and the luminous efficiency of the red light Micro LED is remarkably improved.

The invention relates to a quantum network data transmission method and system for multi-quantum-bit communication, and belongs to the technical field of quantum communication and network. According to the method, an E2E entanglement generation mechanism and a specific noise interference mechanism of multi-quit communication in the quantum network are established, a multi-quit entanglement quality evaluation model, an E2E communication time delay model and a request data transmission model are modeled, and a centralized and distributed collaborative optimization network response model is designed. According to the system, a proposed multi-quit entanglement communication framework is trained and deployed on quantum network models of different scales, the system is used for processing transmission requirements of heterogeneous requests in batches, and stable and efficient data transmission service can be provided for concurrent response of batch requests in a large-scale quantum network. According to the invention, resource configuration and transmission quantification can be carried out on entanglement establishment and entanglement transmission, the response time delay of a large-scale quantum network to a multi-request transmission demand is reduced, and quantum resources are reasonably used.

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, and relates to the technical field of semiconductors. The light-emitting diode epitaxial wafer comprises a substrate, and a buffer layer, a non-doped GaN layer, an N-type GaN layer, an electron dredging layer, a multi-quantum well layer, an electron blocking layer and a P-type GaN layer which are stacked on the substrate in sequence, the electron dredging layer comprises a first sub-layer, a second sub-layer, a third sub-layer and a fourth sub-layer which are sequentially stacked, the first sub-layer is a Si3N4 layer, the second sub-layer comprises an AlGaN layer, a first InGaN layer and a first GaN layer which are periodically and alternately stacked, the third sub-layer comprises a second GaN layer and a second InGaN layer which are periodically and alternately stacked, and the fourth sub-layer is a Si3N4 layer. And the fourth sub-layer comprises an AlInGaN layer, a third InGaN layer and a third GaN layer which are periodically and alternately stacked. According to the invention, while the electronic expansibility is improved, excessive electrons are prevented from entering the multi-quantum well layer to generate electron overflow.

The embodiment of the invention provides a quantum computer operation method, equipment, system and device based on batch processing, and relates to the technical field of quantum.The method comprises the steps that a plurality of target quantum circuits to be operated currently are obtained; compiling the plurality of target quantum circuits in a first parallel mode to obtain quantum calculation instructions corresponding to the plurality of target quantum circuits, and taking the quantum calculation instructions as target quantum calculation instructions; and the obtained multiple target quantum calculation instructions are sent to a quantum chip, correspondingly, the quantum chip can execute the multiple target quantum calculation instructions, and operation results of the multiple target quantum circuits are obtained. Thus, in the process of using a large number of quantum circuits for calculation, the multiple quantum circuits can be compiled at the same time in a parallel mode, the time consumed for compiling the quantum circuits is shortened, and then the overall calculation efficiency can be improved.

The invention provides a calculation module, a wafer level processor and a wafer level computer, the calculation module comprises a plurality of calculation nodes arranged in a preset arrangement mode, and each calculation node comprises a control unit and a plurality of quantum calculation units. The control unit is electrically connected with each quantum computing unit, the control unit is used for deploying computing tasks of each quantum computing unit, and the quantum computing units carry out quantum computing and information storage. The wafer-level processor comprises a plurality of calculation modules, and the wafer-level processor is arranged in a dilution refrigerator to form the wafer-level computer. According to the calculation module, the wafer-level processor and the wafer-level computer provided by the embodiment of the invention, the integration density is improved through a wafer-level integration technology, so that the calculation power of a system is improved.

The invention relates to a P-type GaN LED epitaxial structure based on segmented annealing and compensation doping and a preparation method thereof, and belongs to the technical field of nitride semiconductor epitaxial growth and doping activation. The epitaxial structure sequentially comprises a buffer layer, a non-doped GaN layer, an N-type GaN layer, a multi-quantum well active layer, a P-type AlGaN electron barrier layer, a P-type GaN layer and an MgN compensation layer which are arranged on the substrate layer; wherein the MgN compensation layer is a high-concentration magnesium-doped nitride semiconductor layer, is arranged on the P-type GaN layer, and is used for compensating Mg loss and inhibiting nitrogen vacancy formation in the subsequent annealing process. The preparation method comprises the steps of performing multi-stage annealing treatment on the P-type GaN layer, performing epitaxial growth and annealing on the compensation layer, and finally performing low-temperature post-treatment annealing to form a surface passivation region. According to the structure, the Mg activation efficiency and the hole concentration are remarkably improved through an in-vivo activation and surface compensation synergistic mechanism, the contact resistance is reduced, the conductivity and the light-emitting performance of an LED device are improved, and the structure has excellent implementability and industrialization prospects.

The invention discloses a multiband LED epitaxial structure and a preparation method thereof, and relates to the technical field of semiconductors. A multi-quantum well light-emitting layer of the multiband LED epitaxial structure comprises a first long-wave blue light multi-quantum well light-emitting layer, a second medium-wave blue light multi-quantum well light-emitting layer, a third short-wave blue light multi-quantum well light-emitting layer and a fourth short-wave blue light end quantum well light-emitting layer which are sequentially stacked. The LED chip manufactured through the epitaxial structure can emit light of three different wave bands including long-wave blue light, medium-wave blue light and short-wave blue light, the excitation light source with the blue light of the three wave bands excites the red-green mixed fluorescent powder layer, a full-spectrum white light LED light source can be generated, and compared with a blue light LED chip with only one wave band, the full-spectrum white light LED light source has the advantages that the light emitting efficiency is improved, and the light emitting efficiency is improved. The ratio of short-wave blue light below 450 nm is small, damage to human eye retina cells is small, and a healthy full-spectrum white light LED light source with a high color rendering index can be achieved.

The invention provides a GaN-based LED epitaxial wafer and a preparation method thereof, and the method comprises the following steps: S1, providing a substrate, and placing the substrate on a graphite disc of an MOCVD reaction chamber; s2, carrying out heat treatment on the substrate; s3, growing a buffer layer on the substrate after heat treatment; s4, sequentially growing an unintentional doping layer and an N-type GaN layer on the buffer layer; s5, growing a multi-quantum well light-emitting layer on the N-type GaN layer; s6, growing a P-type electron blocking layer on the multi-quantum well light-emitting layer; step S7, growing a P-type GaN layer on the P-type electron barrier layer; and S8, after growing the P-type GaN layer, adjusting the temperature of the reaction chamber to 20-30 DEG C to obtain the GaN-based LED epitaxial wafer. The GaN-based LED epitaxial wafer obtained by the method has fewer surface particles and higher surface quality.

The invention provides a mid-infrared high-speed waveguide type modulator capable of being integrated on a chip and a design method, and belongs to the technical field of semiconductor optoelectronic devices, aiming at solving the problem that an existing mid-infrared modulator cannot consider high speed, low loss and on-chip integration compatibility at the same time. The modulator comprises an InP substrate, an epitaxial structure growing on the InP substrate and a traveling wave electrode structure prepared on the epitaxial structure. The epitaxial structure sequentially comprises an InP contact layer, an InAlAs lower light limiting layer, an InP / InGaAs lower waveguide layer, an asymmetric multi-quantum well structure, an InP / InGaAs upper waveguide layer, an InAlAs upper light limiting layer and a Cap layer from bottom to top. The design method comprises the steps of selecting a compatible material system, designing an asymmetric multi-quantum well structure, processing an epitaxial structure into a ridge waveguide structure, designing a traveling wave electrode and carrying out device characterization testing. The method is suitable for design and preparation of the middle-infrared band high-speed light modulation device.

The invention relates to the technical field of semiconductor devices, in particular to a light-emitting diode epitaxial structure and a preparation method thereof. The light-emitting diode epitaxial structure comprises a substrate, an h-BN / O2 layer, a low-temperature GaN buffer layer, an N-type semiconductor layer, a multi-quantum well layer and a P-type semiconductor layer which are arranged in sequence, the h-BN / O2 layer subjected to oxygen plasma treatment is inserted between the heterogeneous substrate and the GaN epitaxial layer, the low-temperature GaN buffer layer is grown on the h-BN / O2 layer by controlling the process conditions, and the h-BN / O2 layer and the low-temperature GaN buffer layer are matched, so that lattice mismatch dislocation, residual stress and thermal mismatch of an epitaxial material grown on the heterogeneous substrate can be effectively modulated, the scattering efficiency under high current is improved, and the light emitting efficiency is improved. The probability of radiation recombination of the heteroepitaxial material is improved, and the requirement for heteroepitaxy is lowered.

A hybrid quantum-classical computing system designed to enhance AI applications by integrating classical computational methods with quantum computing power. The system incorporates a classical computing unit and multiple quantum computing units, each specialized for distinct algorithmic tasks. A control module within the classical unit, using predetermined decision logic, manages the distribution of tasks, selectively engaging quantum units for their unique capabilities to optimize efficiency. This scalable architecture allows for significant advances in AI, tackling complex, resource-intensive tasks by effectively harnessing the strengths of both quantum superposition and classical processing.

The present invention provides a light-emitting diode epitaxial wafer and a method for fabricating the same. The light-emitting diode epitaxial wafer comprises a substrate, and a buffer layer, a three-dimensional nucleation layer, an undoped GaN layer, an N-type GaN layer, a multi-quantum well layer, an electron blocking layer, and a P-type GaN layer sequentially deposited on the substrate. The three-dimensional nucleation layer comprises a stacked first and second three-dimensional nucleation sublayers, the thickness of the first three-dimensional nucleation sublayer being less than that of the second three-dimensional nucleation sublayer, both being MgGaN layers, and the growth temperature of the second three-dimensional nucleation sublayer being 10 to 100°C higher than that of the first three-dimensional nucleation sublayer. This light-emitting diode epitaxial wafer can increase the density of V-pits, improve carrier injection efficiency, and enhance the optoelectronic performance of the light-emitting diode.

An optical transmitter includes a distributed feedback (DFB) laser having an active region formed as a multiple quantum well (MQW) and a diffraction grating, an electro-absorption (EA) modulator having an absorption region formed as a MQW having a composition different from a composition of the DFB laser, a semiconductor amplifier (SOA) having an active region having a same composition as the composition of the DFB laser, a bent waveguide that rotates a light propagation direction, and a passive waveguide connected to the SOA and including a core having a band gap wavelength shorter than an oscillation wavelength of the DFB laser. A tapered region of the passive waveguide converts a width W1 of the passive waveguide connected to the SOA into a width W2 of a narrow waveguide region of the passive waveguide, and the passive waveguide is in contact with the end surface of the substrate.

The invention, which relates to the technical field of the semiconductor laser chip, discloses a wide-temperature working high-power DFB semiconductor laser chip comprising a P-InGaAsP lower waveguide layer, an InGaAsP strain multiple quantum channel, an N-InGaAsP upper waveguide layer, an InAlAs-InP superlattice barrier layer, an N-InP spacing layer 1, an N-InGaAsP corrosion stop layer, an N-InP spacing layer 2, an N-InGaAsP grating layer, and an N-InP grating cover layer. According to the wide-temperature working high-power DFB semiconductor laser chip, a laser material structure is epitaxially grown on a P-InP substrate; a P-InP substrate is adopted, so that large-area back ohmic contact effectively reduces P-type series resistance of a device, and the problem of high heating of a traditional high-power laser is effectively solved; then, an InGaAsP strain compensation quantum well is adopted as a gain region, and wide-temperature single-mode work is realized by utilizing the advantage that an InGaAsP gain spectrum is insensitive to temperature; and the InAlAs-InP two-dimensional superlattice barrier structure is adopted to realize transverse and lateral limitation of carriers, so that the limiting efficiency of the carriers in a gain region is effectively improved, and the problem of low energy band difference of an InGaAsP conduction band is effectively solved.

The utility model discloses a multi-junction VCSEL device, a VCSEL chip, a laser radar and a light source thereof. The multi-junction VCSEL device comprises: a substrate; the bottom reflecting mirror structure and the top reflecting mirror structure are sequentially arranged on the substrate; the resonant cavity structure comprises at least two active areas and at least one photoelectric limiting layer, the photoelectric limiting layer is arranged on one side, far away from the substrate, of the active areas, the photoelectric limiting layer is located at the wave trough of the standing wave, and the photoelectric limiting layer is used for limiting a light emitting area of the multi-junction VCSEL device; the at least one optical regulation and control layer is arranged adjacent to the photoelectric limiting layer, the optical regulation and control layer is configured to divide a light field in the resonant cavity structure into at least two sections, and the intensity of each section of the light field is different; and at least two multi-quantum well structures are arranged between the bottom reflecting mirror structure and the nearest optical regulation and control layer. According to the invention, the limiting factor of the photoelectric limiting layer can be greatly reduced, and meanwhile, the limiting factor of the active layer cannot be reduced too much.

Quantum teleportation is essential for many quantum information technologies, including long-distance quantum networks. Using fiber-coupled devices, including state-of-the-art low-noise superconducting nanowire single-photon detectors and off-the-shelf optics, we achieve conditional quantum teleportation of time-bin qubits at the telecommunication wavelength of 1536.5 nm. We measure teleportation fidelities of ≥90% that are consistent with an analytical model of our system, which includes realistic imperfections. To demonstrate the compatibility of our setup with deployed quantum networks, we teleport qubits over 22 km of single-mode fiber while transmitting qubits over an additional 22 km of fiber. Our systems, which are compatible with emerging solid-state quantum devices, provide a realistic foundation for a high-fidelity quantum Internet with practical devices.

The invention relates to the technical field of semiconductor materials, in particular to a low-working-current-density cyan LED epitaxial structure and a preparation method thereof.The low-working-current-density cyan LED epitaxial structure comprises a substrate, and a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum-well light-emitting layer and a P-type semiconductor layer which are sequentially stacked on the substrate; the multi-quantum well light-emitting layer comprises a first light blue light multi-quantum well sub-layer, a second blue light multi-quantum well sub-layer, a third blue light multi-quantum well sub-layer and a fourth light blue light multi-quantum well sub-layer which are sequentially stacked and grown from bottom to top; wherein each sub-layer is of a superlattice structure of an InGaN multi-quantum well layer and a multi-quantum barrier layer, and the barrier heights of the sub-layers decrease progressively in a gradient mode, namely, the high barrier, the middle barrier, the low barrier and the low barrier decrease progressively in sequence. The upper-layer low-potential barrier attracts holes to migrate downwards, and the lower-layer high-potential barrier blocks electrons from leaking, so that space matching of the electrons and the holes is realized, and the performances such as luminous efficiency and yield of the cyan LED chip under low working current density are improved.

The invention is suitable for the technical field of semiconductors, and provides a blue-green double-peak LED epitaxial growth method, which comprises the following steps: processing a substrate, growing a low-temperature GaN buffer layer, growing a non-doped GaN layer, growing a Si-doped N-type GaN layer, growing a multi-quantum well layer, growing an AlGaN electron barrier layer, growing a Mg-doped P-type GaN layer, and cooling. Wherein the growth of the multi-quantum well layer sequentially comprises the steps of growing a first MQWs, growing a tunnel junction layer, growing a second MQWs and growing an AlGaN / GaN superlattice layer, the tunnel junction layer is introduced into the multi-quantum well layer to enhance tunneling of holes, meanwhile, the AlGaN / GaN superlattice layer is introduced, gradual change of an Al component in AlGaN is controlled by controlling the introduction time of TMAl, the problem of light emitting peak broadening is solved, and the light emitting efficiency is improved. The quantum well is ensured to emit blue light and green light at the same time, the color saturation of the light is improved, and the color temperature is reduced.

The invention relates to the technical field of microelectronic manufacturing. The invention discloses a double-layer V-shaped nanowire structure which comprises a base layer arranged on a substrate and further comprises an upper-layer nanowire and a lower-layer nanowire which spatially grow on the base layer in a staggered mode, the upper-layer nanowire and the lower-layer nanowire are broken line type nanowires, and horizontal projections of break points of the broken line type nanowires and horizontal projections of break points of the broken line type nanowires and the lower-layer nanowire coincide and are located on the same plumb line. And the broken line type nanowire on the upper layer is broken at the break point to form a gap. According to the invention, two spatially staggered nanowires are grown by using single IPSLS, the lower layer continuous silicon nanowire is used as a conductive channel, and the upper layer gap nanowire is used as an adjustable depletion gate, so that the preparation process flow of the double-layer V-shaped nanowire structure is greatly simplified, and multiple quantum islands can be integrated to construct a compact quantum bit chain.