594 results about "Multiple quantum" patented technology

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

A quantum computing service provides a quantum algorithm development kit that enables a customer to define a quantum task, a quantum algorithm, or a quantum circuit using an intermediate representation. The quantum computing service is then configured to automatically translate the quantum task, quantum algorithm, or quantum circuit into a specific representation specific to a particular quantum computing technology selected by the customer to be used to execute the customer's quantum task, quantum algorithm, or quantum circuit.

The invention relates to the technical field of semiconductor devices, in particular to a low-working-current-density green light Micro-LED epitaxial structure and a preparation method thereof. The epitaxial structure comprises a substrate, a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum well light-emitting layer and a P-type semiconductor layer. The electron blocking layer is not arranged on the multi-quantum-well light-emitting layer, the multi-quantum-well light-emitting layer comprises four sub-layers including a first light blue light multi-quantum-well layer, a second blue light multi-quantum-well layer, a third green light multi-quantum-well layer and a fourth light blue light multi-quantum-well layer, and the In component content in the third green light multi-quantum-well layer is larger than that in other layers. The third cyan light multi-quantum well layer is a main light-emitting unit and is not provided with an electron blocking layer, so that the blocking effect on hole injection can be eliminated, the hole injection efficiency of the P-type semiconductor layer is remarkably improved, and the matching degree of electron hole concentration in a multi-quantum well light-emitting layer region is improved.

The invention provides a patterned photonic crystal laser and a preparation method thereof, the laser comprises a substrate, and a first mask layer, a photonic crystal layer and a second mask layer which are sequentially deposited on the substrate, a light emitting area is etched in the central area of the second mask layer, and transparent conductive layers are deposited on the surface of the second mask layer and the light emitting area; a p-annular electrode is arranged on the surface of the transparent conductive layer on the second mask layer, and an n-annular electrode is arranged below the substrate; the photonic crystal layer is composed of a nanorod array and a polymer filled in gaps of nanorods; holes distributed in a patterned array are etched in the surface of the first mask layer, and nanorods are epitaxially grown in hole areas; the nanorod is formed by sequentially depositing a substrate contact layer, a first waveguide layer, a multi-quantum well layer, a second waveguide layer, a coating layer and a component gradient layer. According to the invention, through collaborative design optimization of all the layers, emission of laser with specific wavelength and preparation of a laser emitting laser with single longitudinal mode, narrow linewidth and stable wavelength are realized.

The invention discloses a multiband LED epitaxial structure and a preparation method thereof, and relates to the technical field of semiconductors. A multi-quantum well light-emitting layer of the multiband LED epitaxial structure comprises a first long-wave blue light multi-quantum well light-emitting layer, a second medium-wave blue light multi-quantum well light-emitting layer, a third short-wave blue light multi-quantum well light-emitting layer and a fourth short-wave blue light end quantum well light-emitting layer which are sequentially stacked. The LED chip manufactured through the epitaxial structure can emit light of three different wave bands including long-wave blue light, medium-wave blue light and short-wave blue light, the excitation light source with the blue light of the three wave bands excites the red-green mixed fluorescent powder layer, a full-spectrum white light LED light source can be generated, and compared with a blue light LED chip with only one wave band, the full-spectrum white light LED light source has the advantages that the light emitting efficiency is improved, and the light emitting efficiency is improved. The ratio of short-wave blue light below 450 nm is small, damage to human eye retina cells is small, and a healthy full-spectrum white light LED light source with a high color rendering index can be achieved.

The invention provides a mid-infrared high-speed waveguide type modulator capable of being integrated on a chip and a design method, and belongs to the technical field of semiconductor optoelectronic devices, aiming at solving the problem that an existing mid-infrared modulator cannot consider high speed, low loss and on-chip integration compatibility at the same time. The modulator comprises an InP substrate, an epitaxial structure growing on the InP substrate and a traveling wave electrode structure prepared on the epitaxial structure. The epitaxial structure sequentially comprises an InP contact layer, an InAlAs lower light limiting layer, an InP / InGaAs lower waveguide layer, an asymmetric multi-quantum well structure, an InP / InGaAs upper waveguide layer, an InAlAs upper light limiting layer and a Cap layer from bottom to top. The design method comprises the steps of selecting a compatible material system, designing an asymmetric multi-quantum well structure, processing an epitaxial structure into a ridge waveguide structure, designing a traveling wave electrode and carrying out device characterization testing. The method is suitable for design and preparation of the middle-infrared band high-speed light modulation device.

The invention, which relates to the technical field of the semiconductor laser chip, discloses a wide-temperature working high-power DFB semiconductor laser chip comprising a P-InGaAsP lower waveguide layer, an InGaAsP strain multiple quantum channel, an N-InGaAsP upper waveguide layer, an InAlAs-InP superlattice barrier layer, an N-InP spacing layer 1, an N-InGaAsP corrosion stop layer, an N-InP spacing layer 2, an N-InGaAsP grating layer, and an N-InP grating cover layer. According to the wide-temperature working high-power DFB semiconductor laser chip, a laser material structure is epitaxially grown on a P-InP substrate; a P-InP substrate is adopted, so that large-area back ohmic contact effectively reduces P-type series resistance of a device, and the problem of high heating of a traditional high-power laser is effectively solved; then, an InGaAsP strain compensation quantum well is adopted as a gain region, and wide-temperature single-mode work is realized by utilizing the advantage that an InGaAsP gain spectrum is insensitive to temperature; and the InAlAs-InP two-dimensional superlattice barrier structure is adopted to realize transverse and lateral limitation of carriers, so that the limiting efficiency of the carriers in a gain region is effectively improved, and the problem of low energy band difference of an InGaAsP conduction band is effectively solved.

Quantum teleportation is essential for many quantum information technologies, including long-distance quantum networks. Using fiber-coupled devices, including state-of-the-art low-noise superconducting nanowire single-photon detectors and off-the-shelf optics, we achieve conditional quantum teleportation of time-bin qubits at the telecommunication wavelength of 1536.5 nm. We measure teleportation fidelities of ≥90% that are consistent with an analytical model of our system, which includes realistic imperfections. To demonstrate the compatibility of our setup with deployed quantum networks, we teleport qubits over 22 km of single-mode fiber while transmitting qubits over an additional 22 km of fiber. Our systems, which are compatible with emerging solid-state quantum devices, provide a realistic foundation for a high-fidelity quantum Internet with practical devices.

The invention relates to the technical field of semiconductor materials, in particular to a low-working-current-density cyan LED epitaxial structure and a preparation method thereof.The low-working-current-density cyan LED epitaxial structure comprises a substrate, and a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum-well light-emitting layer and a P-type semiconductor layer which are sequentially stacked on the substrate; the multi-quantum well light-emitting layer comprises a first light blue light multi-quantum well sub-layer, a second blue light multi-quantum well sub-layer, a third blue light multi-quantum well sub-layer and a fourth light blue light multi-quantum well sub-layer which are sequentially stacked and grown from bottom to top; wherein each sub-layer is of a superlattice structure of an InGaN multi-quantum well layer and a multi-quantum barrier layer, and the barrier heights of the sub-layers decrease progressively in a gradient mode, namely, the high barrier, the middle barrier, the low barrier and the low barrier decrease progressively in sequence. The upper-layer low-potential barrier attracts holes to migrate downwards, and the lower-layer high-potential barrier blocks electrons from leaking, so that space matching of the electrons and the holes is realized, and the performances such as luminous efficiency and yield of the cyan LED chip under low working current density are improved.

The invention provides a micro-disk structure semiconductor laser and a preparation method, and belongs to the technical field of semiconductor lasers. The high-concentration Zn-doped p-GaAs multi-quantum-well multi-quantum-well light-emitting diode comprises a SiO2 barrier layer, an n-GaAs substrate with the thickness of 100 microns, an n-GaAs contact layer with the thickness of 100 nm, a Si-doped n-AlGaInP limiting layer with the thickness of 200 nm, an n-AlGaInP waveguide layer with the thickness of 400 nm, a first GaInP / AlGaInP multi-quantum-well layer, a GaAs barrier layer, a second GaInP / AlGaInP multi-quantum-well layer, an undoped p-AlGaAs waveguide layer with the thickness of 150 nm, a Zn-doped p-AlGaInP limiting layer with the thickness of 200 nm and a high-concentration Zn-doped p-GaAs contact layer with the thickness of 100 nm. By controlling the thickness and the doping concentration of each layer, efficient limitation and injection of carriers are realized; due to the design of the double multi-quantum well layer and the barrier layer, the device can realize stable lasing in two wavebands of 808nm and 650nm; the undoped waveguide layer effectively reduces the optical loss, prolongs the photon lifetime, and improves the laser output efficiency. And the quantum efficiency and the temperature stability of the device are improved.

In embodiments a component includes a semiconductor layer sequence having a p-side semiconductor layer, an n-side semiconductor layer and an active zone located therebetween, wherein the active zone has a multiple quantum well structure including a plurality of quantum barrier layers and quantum well layers, the quantum barrier layers and the quantum well layers being arranged alternately along a vertical direction, wherein the active zone has at least one recess having facets extending obliquely to a main surface of the active zone, the recess being opened towards the p-side semiconductor layer, wherein, at least within the recess, the quantum barrier layers are n-doped and have a non-constant doping profile so that the component is configured to increase transport negatively charged charge carriers, from the n-side semiconductor layer towards the p-side semiconductor layer, based on the non-constant doping profile, and wherein, from the n-side semiconductor layer towards the p-side semiconductor layer, dopant concentrations of the quantum barrier layers gradually increase.

The invention relates to the technical field of semiconductor devices, in particular to a light-emitting diode epitaxial structure which comprises a substrate, and a graphene composite nano layer, an N-type semiconductor layer, a multi-quantum well layer and a P-type semiconductor layer are sequentially stacked on the substrate. The graphene composite nano layer comprises a modified graphene layer and a ZnO sub-layer which are stacked in sequence, the modified graphene layer is arranged on the substrate, and the ZnO sub-layer is arranged on the modified graphene layer; the modified graphene layer is subjected to nitrogen plasma treatment, and the thickness of the modified graphene layer is 10-100 nm; and the thickness of the ZnO sub layer is 20 nm to 200 nm. According to the invention, lattice mismatch dislocation, residual stress and thermal mismatch of the epitaxial material grown on the heterogeneous substrate can be effectively modulated, the scattering efficiency under high current is improved, the probability of radiation recombination of the heterogeneous epitaxial material is improved, and the requirement of heterogeneous epitaxy is relaxed at the same time.

The invention relates to the technical field of semiconductor materials, in particular to a low-working-current-density green-light LED epitaxial structure and a preparation method thereof.The low-working-current-density green-light LED epitaxial structure comprises a substrate, and a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum-well light-emitting layer and a P-type semiconductor layer which are sequentially stacked on the substrate; the multi-quantum-well light-emitting layer comprises a first blue light multi-quantum-well layer, a second green light multi-quantum-well layer, a third green light multi-quantum-well layer and a fourth green light multi-quantum-well layer which are sequentially stacked and grown from bottom to top. Wherein each InGaN well layer and each quantum barrier layer are subjected to gradient design in thickness, Al component and In component, so that electron and hole space matching is realized, and the performances such as luminous efficiency and yield of the green light LED chip under low working current density are improved.

In a general aspect, a multi-qubit quantum logic gate for a multi-qubit hardware-efficient stabilizer measurement is performed. In some implementations, a superconducting quantum processing unit includes a stabilizer check qubit device and two or more data qubit devices operably coupled to the stabilizer check qubit device through respective tunable-frequency coupler devices. A method includes applying a multi-qubit quantum logic gate on the stabilizer check qubit device and the two or more data qubit devices. Applying the multi-qubit quantum logic gate includes evolving the stabilizer check qubit device and the two or more data qubit devices under an interaction Hamiltonian with a plurality of terms. Each of the plurality of terms corresponding to an interaction between the stabilizer check qubit device and a respective one of the two or more data qubit devices, includes a phase combined with a Pauli operator applied to the stabilizer check qubit device and the Pauli operator applied to the respective one of the two or more data qubit devices.

The invention provides a single-mode 660nm semiconductor laser device with a superlattice structure and a preparation method of the single-mode 660nm semiconductor laser device, and belongs to the technical field of photoelectrons. The multi-quantum-well multi-quantum-well light-emitting diode sequentially comprises a GaAs substrate, a buffer layer, a sectional lower limiting layer, a lower waveguide layer, a multi-quantum-well active region, an AlInP / GaP superlattice, an upper waveguide layer, a sectional upper limiting layer, a band gap transition layer and a GaAs cap layer from bottom to top. The preparation method comprises the processes of substrate processing, buffer layer growth, V-group source switching, limiting layer and waveguide layer epitaxy, multi-quantum well and superlattice structure growth, cap layer deposition and the like. Through the segmented design of the superlattice structure and the limiting layer, the hole injection efficiency and the carrier limiting capability are improved, and the high-temperature working characteristic of the device is effectively improved. Stable output of single-mode laser in the 660nm wave band is achieved, reliable power output of 120mW can be kept in a high-temperature environment of 60 DEG C, and meanwhile, low loss, high conversion efficiency and excellent photoelectric performance are achieved.

The invention relates to a blue-green dual-band light-emitting diode epitaxial wafer which comprises a substrate, a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum well light-emitting layer, an electron blocking layer and a P-type semiconductor layer which are sequentially stacked in the epitaxial direction. The multi-quantum light-emitting layer comprises a first blue light InGaN layer, a first blue light barrier layer, a first green light barrier layer, a first green light InGaN layer, a second green light barrier layer, a second blue light InGaN layer and a second blue light barrier layer which are sequentially, periodically and alternately grown in the epitaxial direction. The first green light barrier layer comprises a pre-well low-energy-level barrier layer, a pre-well high-energy-level barrier layer and a pre-well polarization compensation barrier layer which are sequentially grown along the epitaxial direction; the second green light barrier layer comprises a post-well polarization compensation barrier layer, a post-well high-energy-level barrier layer and a post-well low-energy-level barrier layer which are sequentially grown along the epitaxial direction; the preparation cost of the backlight source can be effectively reduced, the use of fluorescent powder is reduced, the luminous efficiency is high, and the color rendering performance is good.

The invention discloses a light-emitting diode chip for improving the polarization effect of a quantum well light-emitting layer and a preparation method of the light-emitting diode chip. Comprising a sapphire patterned substrate, a buffer layer, a defect barrier layer, an N-type gallium nitride layer, a current expansion layer, a stress release layer, a quantum well light-emitting layer, a polarization buffer layer, a P-type electron barrier layer, a P-type gallium nitride layer, a transparent conductive layer, an electrode layer and a protective layer which are sequentially arranged from bottom to top. The polarization buffer layer is arranged between the quantum well light-emitting layer and the P-type electron blocking layer, buffers energy level abrupt change, and improves the polarization effect. A composite structure of an In < x > Ga < 1-x > N / GaN superlattice and a GaN / Al < y > Ga < 1-y > N superlattice is inserted between the multi-quantum well layer and the electron blocking layer, mutation of energy level is buffered by adjusting gradient doping of In and Al, the polarization effect in quantum wells caused by high potential barriers of the electron blocking layer is effectively improved, and the luminous efficiency of the diode is further improved.

The invention discloses a GaN-based blue-green light LED epitaxial structure and a preparation method thereof, and a GaN-based blue-green light LED. The GaN-based blue-green light LED epitaxial structure comprises a substrate, and a buffer layer, a 3D layer, a U-GaN layer, an N-GaN layer, a multi-quantum well layer, an electron blocking layer and a P-GaN layer which are stacked on the substrate in sequence; wherein the multi-quantum well layer comprises a shallow well transition layer, a first quantum well layer, a second quantum well layer, a stress release layer and a third quantum well layer which are stacked in sequence; the growth temperature of the first quantum well layer is greater than the growth temperature of the second quantum well layer and greater than the growth temperature of the third quantum well layer, and the number of cycles of alternate stacking of the second quantum well layer is greater than the number of cycles of alternate stacking of the third quantum well layer; the stress release layer is an AlGaN layer or an AlN layer and a GaN layer, wherein the AlN layer and the GaN layer are periodically and alternately stacked. According to the invention, the turn-on voltage of the GaN-based blue-green light LED can be effectively improved.

The invention discloses a light quantum chip which is combined with high-dimensional coding, is provided with two data coding layers and two trainable entanglement layers, is compatible with a data recoding technology, and can be used for variable component subtasks such as a quantum neural network. The chip structure comprises a cascaded Mach-Zehnder interferometer binary tree array, d groups of photon pair sources, d groups of controlled unitary gate modules, a multi-quantum bit control Z gate, four d-dimensional adjustable linear networks and two state tomography linear networks. The cascaded MZI binary tree array and the controlled unitary group jointly form a first coding layer and a parameter-containing entanglement layer, and the adjustable optical linear network and the multi-quantum bit control Z gate jointly form a second coding layer and a parameter-containing entanglement layer. The two state chromatography linear networks can further improve the computing power of the chip in a mode of changing a measurement basis or executing quantum state chromatography. According to the method, the expression ability of the light quantum neural network is improved, and the development of a light quantum computing chip and the application of the light quantum computing chip in actual tasks are facilitated.

A micro light-emitting diode chip and a forming method therefor. The micro light-emitting diode chip comprises: a first epitaxial layer, wherein first doped ions are provided in the first epitaxial layer, and the first epitaxial layer has a first side and a second side that are opposite to each other; a multi-quantum well layer located on the first side, wherein the multi-quantum well layer is in contact with the first epitaxial layer; a second epitaxial layer located on the first side, wherein second doped ions are provided in the second epitaxial layer, the electrical type of the second doped ions is different from the electrical type of the first doped ions, and the multi-quantum well layer is located between the first epitaxial layer and the second epitaxial layer; and multiple layers of reflection rings located on the first side and sequentially arranged in a surrounding mode, wherein the reflection rings on the innermost side surround the multi-quantum well layer. By additionally arranging multiple layers of reflection rings on the periphery of the multi-quantum well layer, the light emitted by the multi-quantum well layer can be reflected multiple times, so that the sidewall effect generated due to the small size of a device can be effectively reduced, and the light-emitting efficiency and use stability of the micro light-emitting diode chip can be effectively improved.

The invention discloses a silicon-based indium phosphide laser and a preparation method thereof, and relates to the technical field of semiconductor devices, the silicon-based indium phosphide laser comprises a silicon substrate, a composite insulating layer, a Van der Waals buffer layer and an indium phosphide epitaxial structure which are stacked in sequence; the indium phosphide epitaxial structure comprises a first epitaxial structure stacked on the Van der Waals buffer layer and a second epitaxial structure stacked on the first epitaxial structure; the first epitaxial structure at least comprises a lower cladding layer, a lower limiting layer, a lower waveguide layer, a spacing layer, a multi-quantum well active region, an upper limiting layer, an etching stop layer, an upper waveguide layer and an upper cladding layer which are sequentially stacked, a Bragg grating is manufactured in the upper waveguide layer, and the second epitaxial structure comprises a regrowth cladding layer and a contact layer which are sequentially stacked; the Van der Waals buffer layer is a two-dimensional material film, and the problems of lattice mismatch, thermal expansion coefficient mismatch and polarity structure difference of integration of the silicon substrate and the InP epitaxial layer are thoroughly solved from a physical mechanism by introducing the single-layer two-dimensional material Van der Waals buffer layer.

The invention relates to the technical field of semiconductor devices, in particular to a low-working-current-density cyan LED epitaxial structure and a preparation method thereof. An electron blocking layer is not arranged on a multi-quantum well light-emitting layer of the LED epitaxial structure, and the multi-quantum well light-emitting layer comprises a first light blue light multi-quantum well layer, a second blue light multi-quantum well layer, a third blue light multi-quantum well layer and a fourth blue light multi-quantum well layer which are sequentially stacked and grown from bottom to top. The In component content in the third cyan light multi-quantum well layer is larger than that in other layers, the third cyan light multi-quantum well layer serves as a main light emitting unit under the low working current density, an electron blocking layer is not arranged, the blocking effect on hole injection can be eliminated, and the light emitting efficiency is improved. The hole injection efficiency of the P-type semiconductor layer is obviously improved; and the matching degree of the electron hole concentration in the multi-quantum well light-emitting layer region is improved.

The invention relates to the technical field of semiconductor devices, in particular to a light-emitting diode chip which comprises a substrate, and an N-type semiconductor layer, a multi-quantum well layer, a P-type semiconductor layer and a composite passivation layer are sequentially stacked on the substrate. The composite passivation layer comprises a modified h-BN sub layer and an Al2O3 sub layer which are stacked in sequence, and the Al2O3 sub layer is arranged on the modified h-BN sub layer; the modified h-BN sub-layer is subjected to N2O plasma treatment, and the thickness of the modified h-BN sub-layer is 1nm-5nm; the thickness of the Al2O3 sub layer ranges from 10 nm to 100 nm. The chip provided by the invention has the advantages of good water vapor permeation prevention performance, high light extraction rate, low defect density and long device service life.

The invention relates to the technical field of semiconductor devices, in particular to a blue-green dual-waveband LED epitaxial wafer which comprises a substrate, a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum well light-emitting layer, an electron blocking layer and a P-type semiconductor layer which are sequentially arranged in the epitaxial direction. The multi-quantum well light-emitting layer comprises a non-light-emitting region superlattice layer, a non-light-emitting region quantum well layer, a green light quantum well layer and a blue light quantum well layer which are sequentially, periodically and alternately grown in the epitaxial direction. The backlight source is low in cost, the use of fluorescent powder can be reduced, and the display effect is good.

A color-tunable LED system configured to emit a variety of peak wavelengths of light in response to variations in a driving current density includes an n-type region, a p-type region, and a multiple quantum well (MQW) region formed between the n-type region and the p-type region. The MQW region includes parallel layers, each alloyed with a percentage of Indium, to enable a range of light emission between 400 and 600 nm, and one or more shaped depressions formed within a portion of the parallel layers. Each of the one or more shaped depressions has a lower concentration of the alloyed percentage of the Indium than other portions of the parallel layers. Transition regions between the one or more shaped depressions and the other portions of the parallel layers have a higher concentration of the alloyed percentage of the Indium which decreases with distance from the one or more shaped depressions.

The invention provides a quantum circuit simulation calculation method. The method comprises the following steps: acquiring an ideal quantum circuit; a first noise quantum circuit is obtained according to a noise model and the ideal quantum circuit, the first noise quantum circuit comprises a first quantum gate sequence, the first quantum gate sequence comprises R first diagonal gates acting on a first quantum bit and M first Follici X gates acting on the first quantum bit, the first diagonal gates act on the multiple quantum bits, and the M first Follici X gates act on the multiple quantum bits; m is greater than 1; the first noise quantum circuit is transformed to obtain a fused quantum circuit, the first quantum gate sequence is transformed into a second quantum gate sequence in the fused quantum circuit, and the second quantum gate sequence comprises R second diagonal gates acting on the first quantum bit and F second Fouli X gates acting on the first quantum bit, the second diagonal gate acts on a plurality of quantum bits, and F is a remainder obtained by dividing M by 2; and running the fusion quantum circuit to obtain quantum data output by the fusion quantum circuit.

The invention is applicable to the technical field of LED (light-emitting diode) preparation, and provides a growth method of a green-light LED epitaxial structure, which comprises the following steps of: sequentially growing a nucleating layer, a U-shaped high-temperature GaN layer which is not doped, an N-shaped high-temperature GaN layer which is continuously doped with Si, a multi-quantum well light-emitting layer, a P-shaped AlGaN layer which is doped with Al and Mg and a high-temperature P-shaped GaN layer which is doped with Mg by adopting an MOCVD (metal organic chemical vapor deposition) process; the composite nucleating layer replaces a traditional single GaN nucleating layer, lattice mismatch and stress accumulation are reduced from the source, and the dislocation defect of the multi-quantum well layer is reduced; according to the invention, electric leakage of a green light LED device is effectively reduced, the luminous efficiency and the antistatic capability are improved, and the method is suitable for preparation of a high-brightness GaN-based green light LED epitaxial wafer.

Described herein are optoelectronic devices and methods incorporating strain balanced direct bandgap AlxIn1-xP multiple quantum wells. The described devices are strain balanced in that the net strain between the ordered quantum wells and barriers is low, or in some cases zero. Advantageously, the described devices may be specifically designed for higher efficiency than existing AlxIn1-xP and may be grown on commercially available GaAs substrates.

The invention provides an intercommunication system of a quantum computer, an intercommunication execution method, equipment, a medium and a product. The intercommunication system comprises the steps that a quantum routing system receives a to-be-executed task and carries out analysis and task decomposition on the to-be-executed task to obtain a plurality of sub-tasks; establishing a task allocation strategy based on the computing resource information of each quantum computer; the quantum repeater determines a quantum bit entanglement relationship in the quantum computers based on a task allocation strategy, and establishes quantum entanglement pairs for quantum bits in the quantum computers based on the quantum bit entanglement relationship so as to form a transmission link between the quantum computers; and the task distribution system distributes the sub-tasks to the corresponding quantum computers based on a task distribution strategy, so that at least one quantum computer corresponding to the sub-tasks executes the sub-tasks. Direct interconnection of multiple quantum computers is achieved, the number of transmission times between the quantum computers and classic computers in the task execution process is reduced, and the data transmission efficiency is improved.

A semiconductor laser device includes a first metamaterial element, a semiconductor substrate having a main surface, and a multijunction active region arranged over the main surface of the semiconductor substrate between the first metamaterial element and the semiconductor substrate. The multijunction active region includes a plurality of active regions each comprising a multiple-quantum-well (MQWs), and a plurality of tunnel junction layers providing electrical coupling and located between neighboring active regions along a vertical direction perpendicular to the main surface of the semiconductor substrate.