115 results about "Multiple quantum" patented technology

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

Light-emitting diode (LED), with: a GaN-based N-type compound semiconductor layer (57, 157); a GaN-based P-type compound semiconductor layer (63, 161); and an active region (59, 89, 159) of a multi-quantum pot structure with alternating laminated InGaN pot layers (71, 171) and junction layers (74, 84a, 84b, 83c, 173, 175, 177, 179), wherein the active region (59, 89, 159) is arranged between the N-type and P-type compound semiconductor layers (57, 157, 63, 161), wherein at least one of the barrier layers (74, 84a, 84b, 83c, 173, 175, 177, 179) in the active region (59, 89, 159) has an InGaN barrier layer (73, 83a, 83b, 83c) and a Si-doped GaN barrier layer (75), a doping concentration of Si in the InGaN barrier layer (73, 83a, 83b, 83c) is lower than that of the Si-doped GaN barrier layer (75) and the Si-doped GaN barrier layer (75) is positioned closer to the P-type compound semiconductor layer (63, 161) than the InGaN barrier layer (73, 83a, 83b, 83c).

This invention discloses a light-emitting diode (LED) epitaxial wafer and its fabrication method. The LED epitaxial wafer includes a substrate and a buffer layer, an N-type GaN layer, a stress relief layer, a multiple quantum well layer, an electron blocking layer, and a P-type GaN layer sequentially stacked on the substrate. The stress relief layer includes a Si-doped GaN layer, a Si-doped porous GaN layer, a GaN leveling layer, and an InGaN / GaN superlattice layer sequentially stacked on the N-type GaN layer. The LED fabricated by this invention can reduce the stress and defect density of the epitaxial layer material, improve the quality of the multiple quantum well layer, and enhance the radiative recombination efficiency in the multiple quantum well layer, thereby improving the luminous efficiency of the LED.

A vertical-cavity surface-emitting laser (VCSEL) includes a substrate, a first reflector structure formed above a first surface of the substrate, and a second reflector structure formed above the first surface of the substrate. Furthermore, a multi-junction active region is formed above the first surface of the substrate between the first reflector structure and the second reflector structure. The multi-junction active region includes multiple quantum well (MQW) regions and multiple oxide layers, each of which includes a peripheral region and an aperture region. The peripheral region surrounds the aperture region. A stress field of at least 2 gigapascals is achieved at the edge between the peripheral region and the aperture region.

This invention discloses a method and related apparatus for scheduling quantum computing resources, belonging to the field of quantum computing. The method includes: acquiring multiple quantum circuits; characterizing each quantum circuit based on the number of logical bits it contains as a shape to be filled with corresponding structural areas; and characterizing each quantum computing resource based on the number of physical bits it contains as a large rectangle with corresponding rectangular structural areas; determining the rectangle corresponding to the filling shape under the constraint of scheduling quantum computing resources from quantum circuits; and filling the shape to be filled into the large rectangle in the form of a rectangle to minimize the remaining space of the large rectangle; determining the quantum computing resources to be scheduled for each quantum circuit based on the filling results. This application introduces a two-dimensional bin packing problem to simulate the rectangular filling of quantum circuits into quantum computing resources, aiming to maximize the utilization of quantum computing resources, improve the resource utilization rate of quantum computing resources, and improve the overall quantum computing efficiency through parallel processing.

Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from InGaN / AlGaN multiple quantum wells (MQWs) and AlyGa1-yN / AlxGa1-xN (y<x) MQWs. The InGaN / AlGaN MQWs and AlyGa1-yN / AlxGa1-xN (y<x) MQWs include alternating p-type and n-type layers to form p-n-p-n MQW structures to allow the OPA to operate in the reversed biased configuration to further minimize the operating current and heat generation. The phase in each pixel within the OPA will be controlled independently via electro-optic effect in III-nitride MQWs by varying the voltage in each pixel by a Si CMOS array to achieve the manipulation of the distribution of optical power in the far field and steering of the main laser beam. The present disclosure is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.

The present disclosure provides a blue-green dual-band light-emitting diode and a preparation method thereof, and belongs to the technical field of optoelectronic manufacturing. The light-emitting diode comprises a first semiconductor layer, a blue light multi-quantum well layer, a green light multi-quantum well layer and a second semiconductor layer which are sequentially stacked; the green light multi-quantum well layer comprises a first green light multi-quantum well region, an insertion layer and a second green light multi-quantum well region which are sequentially stacked, the first green light multi-quantum well region and the second green light multi-quantum well region each comprise quantum barrier layers and quantum well layers which are alternately stacked, and the insertion layer comprises at least one of a GaN layer and an InGaN layer. The embodiment of the present disclosure can improve the problem of low carrier injection efficiency of the green light multi-quantum well layer and improve the light-emitting efficiency of the light-emitting diode.

The application discloses a micro light emitting diode based on polarization orientation difference regulation and a preparation method thereof. The micro light emitting diode comprises a substrate layer, and a plurality of first regions and second regions arranged alternately on the substrate layer; the first region comprises a non-doped nitrogen-polar nitride layer, a first n-type ohmic contact layer and an n-type electrode which are sequentially stacked; the second region comprises a nucleation layer, a non-doped metal-polar nitride layer, a second n-type ohmic contact layer, a multi-quantum well active region, an electron blocking layer, a p-type hole injection layer, a p++-type ohmic contact layer and a p-type electrode which are sequentially stacked; wherein the second region is a light emitting unit of the device, and a mesa structure thereof is defined by wet etching; the first region and the adjacent second region form a homopolar junction in the horizontal direction. By constructing nitride epitaxial structures with different polarities on the same substrate, a lateral carrier migration potential barrier is formed, and at the same time, etching damage is eliminated by wet etching, so that side wall non-radiative recombination is avoided.

This invention provides a method for fabricating LED epitaxial wafers and a Micro-LED. The method involves fabricating a multi-quantum-well layer with a periodic stacked structure of InGaN / InN / AlGaN / GaN layers. The InGaN layer acts as a potential well layer, allowing electrons and holes to recombine and participate in light emission. The ultra-thin design improves polarization and reduces QCSE (Quantum Conversion Efficiency). Simultaneously, the ultra-thin design also reduces indium segregation caused by high In content. The InN layer enhances effective In incorporation, and sufficient NH3 further reacts with precipitated In atoms to form InN, resulting in effective incorporation. This improves the In content while maintaining crystal quality. Furthermore, the AlGaN layer acts as a high barrier layer, effectively confining electrons, while the GaN layer provides hole-rich channels, thereby improving luminous efficiency.

The application provides a strain compensation type quantum well material for an EEL (edge emitting laser) and a preparation method thereof, and belongs to the technical field of semiconductor optoelectronic devices. The material comprises a substrate, a lower limiting layer, a lower waveguide layer, a multi-quantum well active region, a strain compensation shell layer, an upper waveguide layer and an upper limiting layer. The multi-quantum well active region is formed by alternately growing InGaAs quantum well layers with compressive strain and AlGaInP barrier layers with tensile strain, so that strain self-compensation is achieved; the strain compensation shell layer adopts an Al component gradient change structure, so that strain accumulation and quantum confinement Stark effect are further inhibited. The preparation method adopts processes such as molecular beam epitaxy, temperature oscillation, dynamic beam current modulation and multi-layer in-situ annealing, so that the material quality and interface flatness are improved. The application effectively improves the temperature stability, output power and service life of the device, and is suitable for optoelectronic devices such as 905 nm band lasers.

This disclosure provides a light-emitting diode and a method for fabricating the same, belonging to the field of light-emitting devices. The light-emitting diode includes: an epitaxial layer; the epitaxial layer includes an N-type semiconductor layer, a multiple quantum well layer, an electron blocking layer, an in-situ passivation layer, and a P-type semiconductor layer stacked sequentially; the in-situ passivation layer is an AlGaN layer doped with Mg and Si.

A quantum-assisted learning system comprises a quantum-assisted device and a feature learning processor. The quantum-assisted device measures multiple qubits corresponding to a quantum signal to generate multiple classical eigenvalues ​​and includes multiple quantum circuits for processing the quantum signal. Each quantum circuit performs the same quantum operation. The feature learning processor is coupled to the quantum-assisted device and is used to train a function based on the classical eigenvalues. This saves time queuing in the quantum computer queue.

An epitaxial structure includes a substrate; a buffer layer formed on the substrate; a non-doped layer formed on the buffer layer; an N-type doped layer formed on the non-doped layer; a stress transition layer formed on the N-type doped layer and configured to release stress from the N-type doped layer; a multiple quantum well (MQW) layer formed on the stress transition layer and configured to emit light, the MQW layer comprising a plurality of Si-AlhIniGa1-i-hN layers and a plurality of InjGa1-jN layers alternately layered; and a P-type doped layer formed on the MQW layer.

Embodiments of the present disclosure provide techniques for implementing a service provider to collect quantum service metadata about multiple quantum systems on multiple quantum machines and storing this quantum service metadata in a service registry. The service provider may transmit a request for access with a qubit registry to each of a plurality of quantum machines, where the plurality of qubit registries store quantum service metadata associated with a plurality of quantum services configured on the plurality of quantum machines. The service provider may receive acceptance for access to each of the plurality of qubit registries. In addition, the service provider may periodically request the quantum service metadata from the plurality of qubit registries and store the received quantum service metadata in a service provider registry.

This invention relates to the field of LED technology, and particularly to a high-efficiency violet LED epitaxial structure and its growth method. The epitaxial structure, from bottom to top, includes: a patterned AlGaN template substrate and a GaN-based epitaxial layer. The patterned AlGaN template substrate sequentially includes a growth substrate, a buffer layer, an AlGaN layer, and a mask layer, wherein the mask layer is a periodically patterned mask. The GaN-based epitaxial layer sequentially includes: an AlGaN capping layer, an n-type semiconductor layer, a stress relief layer, a multi-quantum-well active region, an electron blocking layer, and a p-type semiconductor layer. The n-type semiconductor includes an Alx3Ga1-x3N layer with an Al composition of 0.01 ≤ x3 ≤ 0.05 and x3 ≥ x2. This invention effectively blocks dislocation propagation and reduces defect density through the synergistic design of the patterned AlGaN template substrate and the laterally epitaxially grown AlGaN capping layer; and achieves progressive stress relief and light absorption suppression through the gradient increase of Al composition in each layer of the all-AlGaN-based structure.

The application discloses a high-hole-injection-efficiency LED epitaxial structure and a preparation method thereof, and relates to the technical field of semiconductor devices. The high-hole-injection-efficiency LED epitaxial structure comprises a substrate and an N-type semiconductor layer, a low-temperature stress release layer, a first confinement layer, a multi-quantum-well light-emitting layer, a second confinement layer, a low-temperature P-type semiconductor layer, an electron blocking layer and a high-temperature P-type semiconductor layer which are sequentially stacked on the substrate; the first confinement layer comprises periodically and alternately stacked first AlGaN layers and first GaN layers, and the Al component content of the first AlGaN layers changes in an increasing manner along an epitaxial direction; and the second confinement layer comprises periodically and alternately stacked second AlGaN layers and second InGaN layers, and the Al component content of the second AlGaN layers changes in a decreasing manner along the epitaxial direction. By adopting the application, the hole injection efficiency of the P-type semiconductor material can be improved, and the matching degree of the electron-hole concentration in the multi-quantum-well light-emitting layer can be improved, so that the light-emitting efficiency of the LED device is improved.

A high-efficiency GaN-based LED chip on graphene and its fabrication method are disclosed, belonging to the field of semiconductor optoelectronic materials and devices technology. It consists sequentially of a substrate layer, a graphene layer, an AlN buffer layer, a GaN template layer, an n-GaN electron injection layer, an InGaN / GaN multi-quantum-well active region, and a p-AlN layer. x Ga 1‑x N electron blocking layer, p-GaN hole injection layer, p ++ The system consists of a GaN ohmic contact layer, an n-type electrode layer, and a p-type electrode layer. The graphene surface is pretreated with nitrogen plasma, which significantly increases the nucleation density of AlN on the graphene surface. Furthermore, the AlN buffer layer includes both low-temperature and high-temperature AlN layers, effectively promoting the lateral merging of AlN nucleation islands, thus facilitating the formation of a smooth, high-quality GaN template layer on the graphene. Based on this high-quality GaN template layer, the luminous efficiency of the LED chip can be significantly improved.

The invention discloses a floating interactive intelligent display chip based on dynamic distance sensing and a preparation process, and relates to the field of integrated chip preparation, the floating interactive intelligent display chip comprises a substrate layer, a buffer layer, an intrinsic layer, a multi-quantum well layer, a barrier layer, a source electrode, a grid electrode, a p-GaN layer, an anode and a drain electrode, the buffer layer, the intrinsic layer, the multi-quantum well layer and the barrier layer are sequentially arranged on the substrate layer, and the source electrode, the grid electrode, the p-GaN layer, the anode and the drain electrode are sequentially arranged on the substrate layer. The source electrode is arranged on one side of the upper surface of the barrier layer, the grid electrode is arranged in the middle of the upper surface of the barrier layer, the p-GaN layer is arranged on the other side of the upper surface of the barrier layer, and the anode and the drain electrode are sequentially arranged above the p-GaN layer. An InGaN / GaN multi-quantum well structure is embedded into a p-GaN HEMT epitaxial layer structure to form a light-emitting HEMT structure, and a driving transistor, a light source and a photoelectric detector are subjected to monolithic integration, so that a floating interactive intelligent display chip with an epitaxial integrated structural characteristic is realized.

A modulated laser is described, comprising a laser (30) optically coupled to a modulator (50), the modulator (50) having an intrinsic region (52) comprising: a multi-quantum-well material (41); a field control layer (42) having a doping density to enhance the electric field in the multi-quantum-well material; and a collection layer (43) having a band gap higher than that of the multi-quantum-well material (41). Combining the field control layer and the collection layer in the intrinsic region of the modulator of the modulated laser eliminates the need for a trade-off between high speed and low external bias in the modulated laser.

The application provides a high-efficiency red light plant lighting LED epitaxial wafer and a manufacturing method, and the structure comprises a GaAs substrate, a GaAs buffer layer, an N-type GaInP cutoff layer, an N-type GaAs ohmic contact layer, an N-type AlGaInP roughening layer, an N-type AlGaInP current spreading layer, an N-type AlInP confinement layer, an N-type AlGaInP waveguide layer, a multi-quantum well layer, a P-type AlGaInP waveguide layer, a P-type AlInP composite doped confinement layer with a three-sublayer structure, a P-type AlGaInP transition layer, a P-type GaP window layer and a P-type GaP ohmic contact layer. The Mg diffusion is effectively inhibited through the composite doped structure, the hole injection efficiency is improved, the device voltage is reduced, the photon efficiency (PPE) and the reliability are significantly improved, and the application is suitable for large-scale industrial application.

A miniature light-emitting pixel unit and its formation method, a miniature light-emitting diode chip, and a micro-display panel are disclosed. The pixel unit includes: a first epitaxial layer and a multi-quantum-well layer; a second epitaxial layer, with the multi-quantum-well layer located between the first and second epitaxial layers; an ohmic contact layer in contact with the first epitaxial layer; and a metal reflective layer in contact with the ohmic contact layer. The metal reflective layer has several protrusions extending into the ohmic contact layer. Extending the protrusions of the metal reflective layer into the ohmic contact layer reduces the distance between the metal reflective layer and the multi-quantum-well layer, allowing plasma energy excited by the metal reflective layer to penetrate the ohmic contact layer and the first epitaxial layer, thereby enabling efficient coupling between the plasma energy excited by the metal reflective layer and the light emitted by the multi-quantum-well layer. By providing multiple protrusions, the surface area of ​​the metal reflective layer can be effectively increased, thereby improving its reflectivity.

Provided is a phosphor converted LED comprised of a first and a second p-n junction deposited sequentially on the same wafer. The first and second junctions are separated by a tunnel junction. One multiple quantum well is embedded between the n- and p-layers of the first junction and another multiple quantum well is embedded between the n- and p-layers of the second junction. The peak emission wavelengths of the two junctions are both between 400 nm and 500 nm and are at least 5 nm apart.

This invention discloses an LED epitaxial wafer and its fabrication method, relating to the field of semiconductor device technology. The fabrication method includes: providing a substrate, sequentially growing an N-GaN layer, a multi-quantum-well light-emitting layer, and a P-GaN layer on the substrate; sequentially cleaning the grown structure with an organic solvent, acid washing, and drying; placing the dried structure in a plasma environment, first introducing a cleaning gas for plasma cleaning, the cleaning gas including at least one of argon and helium; then introducing a mixed gas for plasma modification, the mixed gas being composed of oxygen and a gas selected from argon and helium; then sequentially depositing an amorphous ITO seed layer and a crystalline ITO host layer; after deposition, performing annealing treatment to obtain the LED epitaxial wafer. This invention can solve the technical problems of high potential barrier, low hole injection efficiency, and poor interface stability at the ITO / P-GaN contact interface in the prior art.

This invention discloses a light-emitting diode (LED) epitaxial wafer and its fabrication method. The LED epitaxial wafer includes a substrate and, sequentially stacked on the substrate, a buffer layer, an undoped GaN layer, an N-type GaN layer, a composite insertion layer, a multiple quantum well layer, an electron blocking layer, and a P-type GaN layer. The composite insertion layer includes, sequentially stacked on the N-type GaN layer, a BN layer, a BInN layer, and a weakly P-type nitride layer. The LED fabricated by this invention can improve the crystal quality of the multiple quantum well layer and alleviate the piezoelectric polarization of the multiple quantum well layer, thereby improving the luminous efficiency of the LED epitaxial wafer.

This invention discloses an LED chip structure based on a gallium oxide interlayer and its fabrication process. The chip structure sequentially comprises a substrate, an AlN nucleation layer, a U-GaN buffer layer, an N-GaN layer, a superlattice stress relief layer, a multi-quantum-well active layer, a P-GaN layer, an ohmic contact layer, a β-Ga₂O₃ interlayer, and an indium tin oxide current diffusion layer. The β-Ga₂O₃ interlayer possesses high transmittance optical characteristics and is formed by annealing and oxidizing gallium nitride, followed by indium tin oxide deposition. This creates a heterojunction interface on the two contact surfaces, forming a triangular well and a two-dimensional electron gas, further enhancing lateral current diffusion. This invention enables performance and structural control of LED optoelectronic devices, reduces local current density, and improves the brightness, uniformity, lifespan, and stability of LED devices.

The application provides a large-scale quantum bit simulation method and system based on quantum circuit decomposition, and relates to the field of quantum computing, which comprises: preprocessing and normalizing the input quantum circuit; converting the multi-qubit gate in the circuit into a combination composed of single-qubit gate and two-qubit CZ gate, and fusing adjacent single-qubit gates; performing multi-region dynamic partitioning and optimization on the simplified circuit; performing implicit decomposition on the CZ gate across the partition, and performing secondary fusion on the single-qubit gate generated by the decomposition; finally, task scheduling and parallel simulation calculation are performed, and the output result is verified. The application expands the application range of implicit decomposition through gate conversion, greatly saves memory through dynamic partitioning and implicit decomposition, improves calculation efficiency through gate fusion, and enhances parallel scalability through communication optimization, thereby realizing efficient classical simulation of general and large-scale quantum circuits.

A modular quantum computing system that enables distributed quantum computation across multiple quantum processing units (QPUs) that are remotely connected using a quantum entanglement network is disclosed. In order to execute a quantum circuit across multiple QPUs, any quantum state pertaining to any given multi-qubit gate of the quantum circuit may be teleported between two respective QPUs, such that an overall quantum compute capacity for executing the quantum circuit is expanded. Based on a number of QPUs that are allocated for executing the quantum circuit, buffers of established, pairwise quantum entanglement instances between respective sets of the allocated QPUs may be prepared and subsequently maintained prior to and during execution of the quantum circuit, in order to limit potential latency due to use of a quantum entanglement network within the execution of a given quantum circuit.

This application relates to the field of semiconductor devices, and specifically discloses a light-emitting array device and a method for fabricating it. The light-emitting array device includes: a substrate, and a buffer layer, an n-type layer, a multiple quantum well layer, a p-type layer, and a hole injection layer sequentially stacked on the substrate. A first nanopillar array is disposed on the side of the substrate away from the buffer layer; a second nanopillar array is disposed on the side of the n-type layer away from the substrate; and a third nanopillar array is formed together in the p-type layer and the hole injection layer. The first, second, and third nanopillar arrays are used to disrupt the total internal reflection interface. This application improves the light extraction efficiency of the light-emitting device through the above methods.