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9966 results about "Single chip" patented technology

The RISC Single Chip, or RSC, is a single-chip microprocessor developed and fabricated by International Business Machines (IBM). The RSC was a feature-reduced single-chip implementation of the POWER1, a multi-chip central processing unit (CPU) which implemented the POWER instruction set architecture (ISA).

Electrical/mechanical access control systems and methods

InactiveUS6064316AEfficient and effective and reliableEasily rekeyed electricallyElectric signal transmission systemsDigital data processing detailsMaster keyElectric wire
An access control system, has at least one door to a secured area, each door having a strike plate, a host computer, at least one door control module coupled to the host computer, one door control module for every door; and at least one door reader coupled to the at least one door reader coupled to the door control module to activate the strike plate to release the door. The access control system further has at least one electro-mechanical key to independently actuate a lock that corresponds to the door(s). A master keying device to rekey the lock that corresponds to door(s). The host system records information selected from the group consisting of time of entry, place of entry, identification of entered party, and/or any combination thereof. In addition, a door knob and mechanical locking mechanism selectively latches and unlatches the locking mechanism and can be actuated with a mechanical key; and circuitry to actuate the locking mechanism to selectively latch so that the door can open, the circuitry actuated by an electrical signal transmitted by an electrical key, the electrical signal communicated by an electrical contact extending through the mechanical locking mechanism. The circuitry is powered by a battery, which can be removed without disturbing or actuating unlocking mechanism. The contact is an insulated electrical wire that extends through the locking mechanism to the circuitry. All of the circuitry discussed can be integrated onto a single, monolithic piece of silicon in a multi-chip or single-chip format. A master rekeying device has input/output circuitry to receive and transmit electrical signals, circuitry coupled to the input/output circuitry to record a list of security passwords in order to check passwords against the list and a memory to store data; and the input/output circuitry also receives and transmits electrical signals to a host computer.

Single chip microcomputer having a dedicated address bus and dedicated data bus for transferring register bank data to and from an on-line RAM

A single chip microcomputer comprises a central processing unit (CPU) 2, a on-chip RAM 3, a on-chip ROM 5, a first bus DBUS for connecting the CPU, RAM, and ROM with one another and transferring data between them, a second bus ABUS for passing address data corresponding to the data passed through the first bus, a third bus SDBUS for connecting the CPU 2 with the RAM 3 and transferring data between them, the number of bits of the third bus SDBUS being larger than that of the first bus DBUS, and a fourth bus BABUS for connecting the CPU 2 with the RAM 3 and passing address data corresponding to the data passed through the third bus SDBUS. The CPU 2 has a data memory RF serving as general purpose registers for providing internal data to the third bus SDBUS, and a bank specifying register BP for holding positional data of a mapping region in the RAM 3 where the contents of the data memory RF are mapped and providing the positional data to the fourth bus BABUS. The RAM 3 has a memory cell array 31, a bank address control circuit 35 connected to the fourth bus BABUS, for generating a real address according to the contents of the bank specifying register BP (BP0, BP1), and a selection circuit 37 for selecting the real address generated by the bank address control circuit 35, or the address provided through the second bus ABUS.

GaN-based Single chip white light emitting diode epitaxial material

The invention relates to GaN-based Single chip white light emitting diode epitaxial material comprising a substrate and also comprising an initial growth layer, an intrinsic GaN buffer layer, an n-type GaN layer, a stress relaxation layer, an InGaN multiple quantum well structure light emitting layer, a p-type AlGaN sandwich layer and a p-type GaN layer which grow in sequence on the substrate. Thestress relaxation layer is an InGaN/GaN superlattice stress modulation layer which comprises InGaN layers and GaN layers, which are grown alternatively; the InGaN layers and GaN layers have the growth cycle of 6-500 and the corresponding thickness of 10 nm to 3 Mum; and the In components in the InGaN layers are in the range of 1-35 percent. Because the stress-relaxed InGaN/GaN superlattice stressmodulation layer is added between the n-type GaN layer and a multiple quantum light emitting layer, the In segregation effect is strengthened, InGaN quantum dots with different components are formed,and the mixing of different-wave light emitted by the InGaN quantum dots realizes the white light emitting. The cost of the white light emitting diode is reduced radically, the light emitting efficiency and the light using efficiency are increased and the integral performance of the white light emitting diode is improved.
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