Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Pixel structure of active matrix organic light-emitting diode and method for fabricating the same

a technology of organic light-emitting diodes and active matrix, which is applied in the direction of diodes, semiconductor devices, electrical devices, etc., can solve the problems of increasing display size and resolution, affecting the quality of the pixel array of the bottom emitting amoled, and the luminance brightness of the pixel array of the top emitting amoled is obviously not as good as the luminance brightness of the top emitting amoled, so as to improve the aperture ratio of the pixel

Inactive Publication Date: 2007-07-05
IND TECH RES INST
View PDF10 Cites 4138 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a pixel structure of an active matrix organic light-emitting diode (AMOLED) with improved pixel aperture ratio and sufficient luminance brightness. The pixel structure includes an OLED, a data line, at least one scan line, at least one switch TFT, at least one driving TFT, and at least one storage capacitor. The first transparent electrode of the storage capacitor is made of a transparent semiconductor layer, while the second transparent electrode is made of a transparent metal layer. The method for fabricating the AMOLED pixel includes forming a transparent semiconductor layer on a substrate, patterning the semiconductor layer to form a first channel layer, a lower electrode of a storage capacitor, and a second channel layer of a driving TFT, sequentially adding a first dielectric layer, a second gate dielectric layer, and a second opaque metal gate on the substrate, and forming a data line and an OLED over the substrate. The technical effects of the invention include improved pixel aperture ratio and sufficient luminance brightness.

Problems solved by technology

However, the luminance efficiency and the lifetime of a passive driving device are largely declined along with the increase of display size and resolution.
Thus, when a color filter is integrated into an OLED panel, the luminance brightness of the pixel array of a bottom emitting AMOLED is obviously not as good as a top emitting AMOLED.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pixel structure of active matrix organic light-emitting diode and method for fabricating the same
  • Pixel structure of active matrix organic light-emitting diode and method for fabricating the same
  • Pixel structure of active matrix organic light-emitting diode and method for fabricating the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029]FIG. 1A is a schematic circuit drawing of an active matrix organic light-emitting diode (AMOLED) pixel structure. Referring to FIG. 1A, an AMOLED is disposed on a transparent substrate and the pixel structure thereof includes an OLED, a data line Yn, a scan line Xn, a switch TFT T1, a driving TFT T2 and a storage capacitor Cst. The gate of the switch TFT T1 is coupled to the scan line Xn, while the source thereof is coupled to the data line Yn and the drain thereof is coupled to the gate of the driving TFT T2 and the storage capacitor Cst. The drain of the driving TFT T2 is coupled to the OLED, while the source thereof is coupled to a power line Vdd. The storage capacitor Cst is formed by two transparent electrodes and a dielectric layer between the two electrodes. The lower electrode of the storage capacitor Cst is electrically connected to the drain of the switch TFT T1 and the gate of the driving TFT T2 and is a transparent semiconductor layer. The material of the transpare...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A pixel structure of an active matrix organic light-emitting diode (AMOLED) includes an organic light-emitting diode (OLED), a data line, at least one scan line, at least one switch thin film transistor (TFT), at least one driving TFT and at least one storage capacitor with two transparent electrodes. Since both the electrodes of the transparent storage capacitor are formed by transparent material, the aperture ratio of the pixel and the area of the capacitor largely increase and can reach 50%˜95% of a pixel area. Thus, the display quality of an AMOLED panel can be improved.

Description

CROSS-REFERENCE TO RELATED APPLICATION [0001] This application claims the priority benefit of Taiwan application serial no. 94147154, filed on Dec. 29, 2005. All disclosure of the Taiwan application is incorporated herein by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of Invention [0003] The present invention relates to an organic light-emitting diode (OLED) and the method for fabricating the same, and particularly to an active matrix organic light-emitting diode (AMOLED) and the method for fabricating the same. [0004] 2. Description of the Related Art [0005] An organic light-emitting diode (OLED) is a semiconductor device capable of converting electrical energy into optical energy. Since OLEDs have advantages of high conversion efficiency, no angle of view (AOV) concern, simpler process, low cost, high response rates, broader operation temperature range and full colorization, OLEDs meet the requirements of multi-media age today and are broadly applied in indicator lights...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): H01L29/04
CPCH01L27/1225H01L29/7869H01L27/3265H01L27/322H10K59/38H10K59/1216
Inventor LAI, CHIH-MINGYEH, YUNG-HUIHUANG, YI-HSUN
Owner IND TECH RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products