40results about How to "Increase capacitance" patented technology

The invention discloses a method for preparing a graded porous nickel electrode by step-by-step dealloying and application thereof, and the method comprises the following steps: spraying a nickel-aluminum material on a nickel-based substrate to obtain a first intermediate product; performing heat treatment on the first intermediate product to obtain a second intermediate product; the second intermediate product is sequentially placed in alkali liquor with different concentrations for step-by-step activation, and the graded porous nickel electrode is obtained; in the step of step-by-step activation, the concentration of the alkali liquor is gradually reduced, and the activation temperature is gradually reduced. According to the graded porous nickel electrode, the efficient mass transfer rate and catalytic efficiency are guaranteed; the bonding strength between the coating and the substrate is high, the interlayer structure is stable, the mechanical property and stability are good, and the service life is long; and the hierarchical porous structure can be constructed only through step-by-step activation, so that the preparation process is remarkably simplified.

The invention provides an ultra-high-speed electric connector which comprises an insulating body, the insulating body is provided with a lengthwise slot, a plurality of terminal slots are formed in lengthwise side walls on the two sides of the slot respectively, and a fool-proof part is arranged in the slot and used for dividing the insulating body into a power supply and low-speed signal area and a high-speed signal area which are located on the two sides of the fool-proof part; the plurality of terminals comprise differential signal terminals distributed in the high-speed signal area and other terminals distributed in the high-speed signal area and the power supply and low-speed signal area, every two differential signal terminals are adjacent, and two sides of every two adjacent differential signal terminals are respectively provided with a grounding terminal; every two adjacent differential signal terminals and two grounding terminals located on the two sides of the two differential signal terminals form a terminal module, and the two differential signal terminals and the two grounding terminals of each terminal module and an insulating block inserted into the insulating body are formed in an embedded mode. The ultra-high-speed electric connector can enable signal transmission to be better and more stable.

The invention belongs to the technical field of integrated photoelectronics, and discloses an MOS (Metal Oxide Semiconductor) type silicon-on-chip electro-optical modulator based on colloid nanocrystals and a preparation method thereof. The silicon waveguide layer is arranged above the waveguide cladding layer; optical couplers used for inputting and outputting optical signals are arranged at the two ends of the silicon waveguide layer; the dielectric layer is arranged above the silicon waveguide layer in a covering manner; a colloidal nanocrystalline layer disposed over the dielectric layer; the upper electrode layer is arranged above the colloid nanocrystalline layer; the lower electrode layer is communicated with the silicon waveguide layer; and the dielectric layer is used for changing the polarization state according to an external voltage and controlling the inductive charge concentration in the colloid nanocrystalline layer and the silicon waveguide layer through the polarization state. The room-temperature liquid phase processing procedure of the colloidal nanocrystal is simple, and is completely compatible with a silicon-based CMOS (Complementary Metal Oxide Semiconductor) process, so that low-cost and large-scale integration can be carried out; the colloidal nanocrystal has a plasma dispersion effect stronger than that of a silicon material, is easy to realize an ENZ effect, and can realize high modulation efficiency and high modulation depth.

The application provides a non-continuous three-phase rectifier adjustable power decoupling method, and relates to the field of power electronics. The method is characterized in that a capacitor equivalent circuit is connected in parallel to the DC side of a three-phase PWM rectifier, the capacitor equivalent circuit is composed of a first capacitor connected in series with an active negative capacitor circuit, and a digital signal controller is used to sample the relevant voltage and current signals of the AC side and the DC side, and the active negative capacitor capacitance is adjusted by controlling the switching tube, so that the equivalent capacitor circuit can be flexibly adjusted. The application does not require an additional DC power supply, the capacitance and inductance of the passive device used are small, and the volume advantage is significant. The closed-loop control has high precision and equivalent inhibition effect as the traditional large capacitor. The equivalent capacitance is adjusted only by software, the external physical structure does not need to be changed, and the adjustment range is wide. The preset DC side voltage fluctuation amplitude can be calculated and adjusted automatically, different unbalanced working conditions can be adapted, the fluctuation suppression demand can be met, different working modes can be switched according to the AC side working condition, and the application is not continuously operated, so that the switching loss is lower.

The present invention discloses a carbon matrix composite vanadium nitride nanoarray and a preparation method therefor and use thereof. The preparation method includes the following steps: dissolve vanadium pentoxide into an organic solvent to obtain a mixed solution; place a carbon matrix into the mixed solution to undergo a solvothermal reaction and wash and dry a product of the reaction to obtain a precursor; and heat and calcine the precursor in an ammonia atmosphere to obtain the carbon matrix composite vanadium nitride nanoarray. The present invention provides a composite structure of vanadium nitride nanoparticles and a three-dimensional flexible carbon matrix, which can effectively alleviate the volume change generated during an electrode reaction process, significantly improve the cycle life of the battery, provide excellent electrochemical performance, and enhance the charge-discharge efficiency.

A capacitor structure includes lower and electrodes, and a capacitor dielectric film interposed therebetween. The lower electrode includes a lower electrode film including a first metal element, a first doped oxide film including a second metal element and an oxide of the first metal element, and a first metal oxide film. The first metal oxide film includes an oxide of the first metal element and is free of the second metal element. The upper electrode includes an upper electrode film including the first metal element, a second doped oxide film including the second metal element and an oxide of the first metal element, and a second metal oxide film that includes an oxide of the first metal element, and is free of the second metal element.

The invention discloses a preparation method of a high-specific-capacitance supercapacitor electrode based on a carbon material, and the method comprises the steps: mixing the carbon material with a sodium alginate or carboxymethyl cellulose aqueous solution to obtain slurry; coating a substrate with the slurry to form a slurry film, immersing the slurry film and the substrate into a cross-linking agent for cross-linking, and then separating the hydrogel film from the substrate; and washing the hydrogel film with distilled water to remove the residual cross-linking agent, and then immersing the hydrogel film in electrolyte for electrochemical treatment to obtain the high-specific-capacitance supercapacitor electrode. According to the invention, the electrochemical stable potential window can be widened by 30% and the specific capacitance can be improved by about 100% under the condition that the existing commercial carbon material and electrolyte are utilized, and the preparation method is simple, is matched with the existing commercial production line and can realize large-scale preparation.

The present invention provides an electrode material for aluminum electrolytic capacitors, the electrode material being capable of exhibiting a high capacitance required for capacitors and having suppressed equivalent series resistance (ESR), and provides a method for producing the electrode material. The present invention provides an electrode material for aluminum electrolytic capacitors, comprising a sintered body of an aluminum alloy powder on at least one surface of a substrate, wherein the substrate is an aluminum foil substrate or an aluminum alloy foil substrate, and the aluminum alloy powder contains Fe in an amount of 2 to 499 mass ppm.

This invention relates to the field of carbon material preparation technology, specifically disclosing a method for preparing porous carbon materials using a hierarchical synergistic activation method and its application. This method uses waste biomass from *Siraitia grosvenorii* pomace as raw material, sequentially undergoing low-temperature pre-activation, water washing, high-temperature synergistic activation, and isothermal acid washing to obtain porous carbon materials with ultra-high specific surface area. Scanning electron microscopy analysis and pore structure detection results show that the carbon material exhibits a hierarchical porous layered structure. Electrochemical tests show that the material possesses excellent capacitance performance, with a specific capacitance reaching 200-450 F / g at a current density of 0.5 A / g. When this porous carbon material is assembled into a symmetrical supercapacitor, after 10,000 cycles at a current density of 10 A / g, the specific capacitance retention rate remains above 90%, demonstrating good cycle stability and showing promising application prospects in the field of energy storage.

The present application relates to a kind of high-performance supercapacitor electrode materials and its preparation method and application.The high-performance supercapacitor electrode material is the heteroatom doped porous biochar electrode material obtained after the pre-carbonization of [Bmim]FeCl4 and waste biomass is mixed, then activated by KOH again.The present application uses the two-step method preparation technology of ion liquid pre-carbonization and KOH activation, combines pyrolysis modification and chemical activation, finally realizes the synergistic enhancement of pseudo-capacitance and double-layer capacitance.Compared with prior art, the present application dopes N / O / Fe and other heteroatoms in the ion liquid pre-carbonization stage and constructs pseudo-capacitance active site, constructs developed hierarchical porous structure in the KOH activation stage to greatly improve specific surface area, finally realizes the synergistic enhancement of pseudo-capacitance and double-layer capacitance, and prepares high-performance supercapacitor electrode material.

The invention relates to the technical field of preparation of active carbon materials, in particular to a method for preparing a biomass porous carbon material through a coupling activation method and application of the biomass porous carbon material. The preparation method comprises the following steps: by taking waste biomass such as cassava peel as a raw material, performing fermentation, acid leaching activation, low-temperature carbonization, alkali activation, ultrasonic acid pickling and high-temperature impurity removal to obtain the biomass-derived porous carbon material, and performing electron microscope analysis and pore detection on the biomass-derived porous carbon material prepared by the steps. The biomass derived porous activated carbon material is of a porous layered structure and has abundant micropores and mesopores; according to the present invention, the electrochemical test experiment detection results show that the biomass derived porous carbon material has excellent capacitance performance, and when the current density is 0.5 A / g, the specific capacity value range is 200-400 F / g; the material also has good stability, the biomass derived porous carbon material is assembled into a symmetric supercapacitor, and after 10000 circles of stability tests, the retention rate of the specific capacitance of the symmetric supercapacitor can be maintained to be 90% or above.

The application relates to the field of electrochemical energy storage technology and discloses a nitrogen-doped porous nanocarbon material, wherein the nanocarbon material has microporous structure and mesoporous structure, the BET specific surface area of the nanocarbon material is 300-3000 m 2 / g, the proportion of the specific surface area in micropores in the total specific surface area is higher than 60%; the total pore volume of the nanocarbon material is 0.5-2 cm 3 / g, the proportion of the pore volume in micropores in the total pore volume is higher than 50%; the mass percentage of surface carbon of the nanocarbon material is 70-95% measured by X-ray photoelectron spectroscopy; the mass percentage of nitrogen is 1-20%; and the nanocarbon material has a sheet-like appearance. The preparation method can realize high nitrogen doping, catalytic graphitization and activation pore-forming of the nanocarbon material at the same time. When the nitrogen-doped nanocarbon material is applied to a supercapacitor and a water-based alkaline electrolyte is used, the specific capacitance of a single electrode can be up to 252 F / g at a current density of 1 A / g, and the nanocarbon material exhibits excellent capacitive performance.

Provided is an electrode, including: a collector; and an active material layer formed on the collector, wherein the active material layer contains sulfur-modified polyacrylonitrile and a lithium-titanium oxide, wherein an average secondary particle diameter of the sulfur-modified polyacrylonitrile is larger than an average secondary particle diameter of the lithium-titanium oxide, and wherein a content of the sulfur-modified polyacrylonitrile in the active material layer is from 5 mass% to 85 mass%, and a content of the lithium-titanium oxide in the active material layer is from 5 mass% to 85 mass%.

The invention provides an MEMS device and a manufacturing method thereof, and a method for reading an output signal of the MEMS device, the MEMS device comprising: a first substrate in which a back cavity is formed; the first movable film layer, the first isolation layer, the first fixed electrode layer, the second isolation layer, the third movable film layer, the fifth isolation layer, the fourth movable film layer, the fourth isolation layer, the second fixed electrode layer, the third isolation layer and the second movable film layer are located on the first substrate; the first cavity is positioned between the first movable film layer and the third movable film layer; the second cavity is positioned between the second movable film layer and the fourth movable film layer; the first connecting column is positioned in the first cavity and is connected with the third movable film layer and the first movable film layer; the second connecting column is positioned in the second cavity and is used for connecting the second movable film layer and the fourth movable film layer; and the release hole penetrates through the third movable film layer, the fifth isolation layer and the fourth movable film layer. According to the scheme, the sensitivity and the signal-to-noise ratio of the device can be improved.

A dielectric 10 of the present disclosure includes a composite oxide having composition represented by LaxYyAl(1-x-y)Ok. In the composition, a requirement 0.1 ≤ x + y < 0.50 is satisfied. The symbol k is a value for maintaining electroneutrality of the composite oxide.

The application provides a tunable phase shifter and an electronic device. The tunable phase shifter comprises a dielectric layer between a first substrate and a second substrate; a first electrode arranged on the first substrate; and a second electrode arranged on the second substrate. The second electrode comprises at least one patch electrode arranged on the second substrate. A projection of the first electrode on the second substrate covers at least part of a projection of the dielectric layer on the second substrate and at least part of a projection of the patch electrode on the second substrate. The first electrode, the dielectric layer and the at least one patch electrode form at least one variable capacitor. This structure facilitates voltage application, does not require additional electrodes and has little effect on the performance of the phase shifter. The capacitance of the variable capacitor can be increased by changing the thickness of the first electrode and / or the patch electrode. When the dielectric constant of the liquid crystal in the variable capacitor changes, the phase shifter can obtain a larger phase shift.

The application discloses a preparation method of a high specific capacitance supercapacitor electrode based on carbon materials, which comprises the following steps: mixing carbon materials with sodium alginate or a carboxymethyl cellulose aqueous solution to obtain a slurry; coating the slurry on a substrate to form a slurry film, immersing the slurry film together with the substrate in a crosslinking agent to perform crosslinking, and then separating the hydrogel film from the substrate; cleaning the hydrogel film with distilled water to remove residual crosslinking agent, and then immersing the hydrogel film in an electrolyte to perform electrochemical treatment, so as to obtain a high specific capacitance supercapacitor electrode. The application can widen the electrochemical stable potential window of the carbon materials and the electrolyte by 30% and improve the specific capacitance of the carbon materials by about 100% under the condition that the carbon materials and the electrolyte are used in existing commercial applications, and the preparation method is simple, compatible with existing commercial production lines, and can realize large-scale preparation.

This invention relates to the technical field of voltage-adjustable capacitors, and discloses a voltage-adjustable capacitor structure and its application based on an ionized double layer. The voltage-adjustable capacitor structure includes: a driving layer comprising an electrodeformable material and matching positive and negative electrodes, the electrodeformable material capable of out-of-plane deformation upon application of voltage; and an ionized capacitor layer comprising an ionically active material with surface microstructures, a pair of electrodes for reading capacitance values, and elastic washers controlling the initial spacing between the electrodes. The ionized capacitor layer is encapsulated with insulating layers on both the top and bottom. This invention utilizes the principle of an ionized double layer, applying voltage to the driving layer to generate out-of-plane deformation, transmitting uniform pressure to the flexible ionized capacitor layer. This causes dynamic changes in the contact area between the ionically active material with surface microstructures and the electronically conductive electrodes. Leveraging the high capacitance density of the double layer, a significant increase in capacitance value from 58 pF to 1200 pF is achieved, with an adjustment ratio exceeding that of existing technologies by 2-8 times.

The utility model provides a kind of bus expansion connector of ultrahigh transmission rate, including an insulating body, with a length slot, multiple terminal slots are respectively arranged in the length side wall of the both sides of slot, an anti-stupid part is arranged in slot, for the insulating body is separated into the power supply and low-speed signal area and high-speed signal area located at the both sides of anti-stupid part;Multiple terminals, including the differential signal terminal distributed in high-speed signal area and the remaining terminal distributed in high-speed signal area and power supply and low-speed signal area, every two differential signal terminals are adjacent, and every two adjacent differential signal terminals are embedded with one insulating block inserted in insulating body Forming, insulating block is hollow at the gap between two differential signal terminals;The remaining terminals are all independent terminals inserted in corresponding terminal slot of insulating body;The bus expansion connector of ultrahigh transmission rate can make signal transmission more good and stable.

The invention discloses a local medium modulated transverse super junction silicon carbide device, and belongs to the technical field of semiconductor power devices. The device comprises a semiconductor substrate, a buried oxide layer, a silicon carbide active layer and a metal layer which are sequentially stacked from bottom to top, the silicon carbide active layer comprises a local dielectric region and a super-junction structure, and the dielectric region partially covers the two sides of the super-junction structure and the surface of a small-width part. A medium with a high dielectric constant is used for replacing a common silicon oxide gate medium to improve the problem of gate leakage current, the turn-on voltage of the device is reduced, meanwhile, a local medium is introduced to introduce a new electric field peak in a drift region, electric field distribution is modulated, the charge unbalance effect of a transverse super-junction structure is improved, and the performance of the device is improved. The drift region concentration is optimized, the on-resistance of the device is reduced, and the performance and reliability of the device are improved.

Embodiments of the present application provide a semiconductor device, comprising: a substrate; a plurality of floating gate structures disposed on a first region of the substrate and spaced apart from each other; a dielectric layer continuously covering sidewalls and top surfaces of the plurality of floating gate structures; a control gate layer above the dielectric layer, the control gate layer covering the plurality of floating gate structures and the dielectric layer, the control gate layer extending into spaces between the plurality of floating gate structures; a floating gate layer disposed on a second region of the substrate different from the first region and connected to each of the plurality of floating gate structures; and a plurality of conductive vias connected to an active region of the substrate and the control gate layer in the first region, respectively, and connected to the floating gate layer in the second region. The present application aims to at least increase the cooperation area between the control gate layer and the plurality of floating gate structures, thereby increasing the capacitance, and additionally, the process requirement for forming the conductive vias is not strict.

The present application relates to a method and device for filling redundant metal in a chip, a chip and a semiconductor device. The method comprises: dividing each metal layer of a chip comprising a plurality of metal layers into a plurality of regions; selecting, from the plurality of regions of each metal layer, a region requiring addition of redundant metal as a to-be-filled region based on a layout of each metal layer after routing; determining whether each to-be-filled region of an adjacent metal layer overlaps in a thickness direction of the metal layer; in response to no overlap, performing interdigital redundant metal filling on the to-be-filled region of each metal layer respectively; in response to an overlap, connecting the to-be-filled regions of adjacent layers by a via, and performing interdigital redundant metal filling on one of the plurality of to-be-filled regions having the overlap, and performing floating metal filling on the remaining to-be-filled regions of the plurality of to-be-filled regions having the overlap. The present application significantly improves the capacitance value and the utilization rate of redundant metal in a limited space.

A dielectric 10 includes a composite oxide. The composite oxide has composition represented by CexAl1-xOk and is amorphous. In the composition represented by CexAl1-xOk, a requirement 0.400 ≤ x < 0.900 is satisfied. The symbol k is a value for maintaining electroneutrality of the composite oxide.

The invention relates to an interdigital flexible supercapacitor and a preparation method and application thereof. The interdigital flexible supercapacitor comprises a flexible substrate layer, a middle layer and a flexible protection layer which are stacked in sequence, the middle layer comprises an interdigital electrode and a gel electrolyte, and the interdigital electrode comprises graphene-based conductive yarn interdigitals distributed on the flexible substrate layer in an array staggered mode and outgoing lines on the two sides; the gel electrolyte is filled between graphene-based conductive yarn interdigitals, and a gap is formed between the gel electrolyte and the outgoing line. Through the interdigital electrode structure design, the supercapacitor with good flexibility and high capacitance performance is prepared, the used electrode material is the conductive yarn, the conductive yarn has the advantages of being easy to obtain and low in cost, and the yarn material is easy to bend and also serves as an ideal material of the flexible supercapacitor; good capacitance performance can be kept under the bending condition, and a new strategy is provided for development of the fields of intelligent wearable equipment, artificial intelligence, flexible energy storage and the like.

This invention discloses a high-speed, high-density ferroelectric memory, its fabrication method, and its applications, belonging to the field of semiconductor memories. The memory consists of an array of multiple memory cells, with substantially orthogonal word lines and bit lines connecting the two sides of the array. The memory cells of this invention employ a stacked structure of a top electrode, a varactor dielectric layer, an intermediate metal layer, a ferroelectric dielectric layer, and a bottom electrode. Electrically, this is equivalent to a ferroelectric capacitor connected in series with a varactor selector. By adjusting the voltage division relationship of the memory cells, the voltage division of the ferroelectric capacitor in the unselected cells is reduced, thus reducing its disturbance. Furthermore, the series capacitors reduce the RC delay of the memory cells, improving memory access speed. Therefore, this invention reduces the disturbance of unselected cells, increases the memory's storage window, reduces the memory's bit error rate, and improves memory access speed without increasing additional area overhead.

The utility model provides a radio frequency energy bidirectional digital tuning circuit and a radio frequency energy acquisition system, and relates to the technical field of integrated circuits, and the radio frequency energy bidirectional digital tuning circuit comprises a capacitance increasing circuit, a capacitance reducing circuit and a finite-state machine. Wherein a first port of the capacitance increasing circuit and a third port of the capacitance reducing circuit are connected in parallel; a second port of the capacitance increasing circuit and a fourth port of the capacitance reducing circuit are connected in parallel; the finite-state machine is respectively connected with a bias voltage end of the capacitance increasing circuit and a bias voltage end of the capacitance reducing circuit, and is used for providing bias voltage for the capacitance increasing circuit and the capacitance reducing circuit; the capacitance increasing circuit is used for increasing the capacitance of the radio frequency energy bidirectional digital tuning circuit; and the capacitance reduction circuit is used for reducing the capacitance of the radio frequency energy bidirectional digital tuning circuit. According to the technical scheme of the embodiment of the utility model, bidirectional tuning can be realized, and the working bandwidth of the tuning circuit is expanded.

This disclosure provides a multilayer ceramic capacitor and a method for manufacturing the same. The multilayer ceramic capacitor includes: a capacitor body comprising a dielectric layer and an inner electrode layer; and an outer electrode disposed on the outer surface of the capacitor body. The dielectric layer comprises a plurality of dielectric grains, at least one of which has a core-shell structure. The core-shell structure includes a core and a shell surrounding at least a portion of the core. The core comprises barium (Ba) and titanium (Ti), and the shell comprises zirconium (Zr) and calcium (Ca) and / or strontium (Sr).

The application relates to the technical field of power batteries, in particular to a new energy automobile power battery system insulation abnormality detection method, which comprises the following steps: obtaining original messages, performing analysis, extracting battery signal data, and performing data cleaning and normalization processing; the battery signal data is subjected to feature selection, insulation resistance, voltage, current and temperature related to the insulation state are selected as feature data; the first k modes of the insulation resistance, the voltage, the current and the temperature are calculated as initial values; the feature data is classified based on a k-means clustering algorithm to obtain k-class classification features; the clustering effect of the clustering results obtained by different k is evaluated by using a contour coefficient; the best k of the clustering effect is selected, and the abnormality degree of different categories is analyzed; and insulation abnormality is judged according to the difference of the k-class classification features. The scheme has strong anti-interference capability, is favorable for stably obtaining detection results with higher precision, and is convenient for taking measures for processing in a more timely manner.

The present invention discloses a method for preparing a nitrogen-doped core-shell structure activated carbon electrode material, which adopts the following technical scheme: (1) dissolving graphite oxide in deionized water, and then directly adding glucose powder to the graphene oxide solution; (2) placing the mixed solution obtained in step (1) in a reactor, and reacting at 160-190°C for 12-24 h; after the reaction is completed and cooled, the cylindrical solid sample is separated, washed, and dried to obtain a precursor, which is then heated to 800°C at a heating rate of 3°C / min-5°C / min under an inert atmosphere, and calcined for 3-6 h to obtain a nitrogen-doped core-shell structure activated carbon supercapacitor electrode material. In step (1), the concentration of the graphene oxide solution is 0.3-0.7 mg / mL, the concentration of the glucose solution is 30-350 mg / mL, and the mass ratio of graphite oxide to glucose is 1:100-1:300. The present invention can improve the capacitance performance of a single material. As a supercapacitor electrode material, its specific capacitance is as high as 389 F / g at 0.1 A / g, showing high electrochemical performance.

The application provides a Co-doped ternary hydrotalcite and a preparation method thereof. The Co-doped NiCoMo ternary hydrotalcite material is synthesized by a simple water bath heating method in one step, has a nanoflower surface morphology, increases the specific surface area of the material, and the incorporation of Co elements improves the electrochemical performance and storage performance of the positive electrode material. The preparation method comprises the following steps: dissolving nickel salt, cobalt salt and molybdenum salt in deionized water, adding an intercalation agent and a pH regulator, washing and drying the obtained precipitate after the reaction is completed, and the Co-doped ternary hydrotalcite is obtained.