1331 results about "Regioselectivity" patented technology

A semiconductor device according to one embodiment of the present invention includes: a fin including a buffer layer made of SiGe and formed on a Si layer, and a SiGe layer formed on the buffer layer, the SiGe layer having a Ge concentration corresponding to a Ge concentration of the buffer layer in an interface between the buffer layer and the SiGe layer; a gate electrode formed on a side face of the fin through a gate insulating film; a channel region formed in a region within the fin facing the gate electrode through the gate insulating film, the channel region being selectively provided within the SiGe layer of the buffer layer and the SiGe layer included in the fin; and a source region and a drain region formed within the fin, the channel region being formed between the source region and the drain region.

Backthinning in an area selective manner is applied to CMOS imaging sensors 12 for use in electron bombarded active pixel array devices. A further arrangement results in an array of collimators 51 aligned with pixels 42 or groups of pixels of an active pixel array providing improved image contrast of such image sensor. Provision of a thin P-doped layer 52 on the illuminated rear surface provides both a diffusion barrier resulting in improved resolution and a functional shield for reference pixels. A gradient in concentration of P-doped layer 52 optimizes electron collection at the pixel array.

A hydrogen barrier layer is selectively provided over an oxide semiconductor layer including hydrogen and hydrogen is selectively desorbed from a given region in the oxide semiconductor layer by conducting oxidation treatment, so that regions with different conductivities are formed in the oxide semiconductor layer. After that, a channel formation region, a source region, and a drain region can be formed with the use of the regions with different conductivities formed in the oxide semiconductor layer.

A method of etching exposed silicon-nitrogen-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-nitrogen-and-carbon-containing material. The plasma effluents react with the patterned heterogeneous structures to selectively remove silicon-nitrogen-and-carbon-containing material from the exposed silicon-nitrogen-and-carbon-containing material regions while very slowly removing selected other exposed materials. The silicon-nitrogen-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element controls the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-nitrogen-and-carbon-containing material at a faster rate than exposed silicon oxide or exposed silicon nitride.

A semiconductor device has selectively applied thin tensile films and thin compressive films, as well as thick tensile films and thick compressive films, to enhance electron and hole mobility in CMOS circuits. Fabrication entails steps of applying each film, and selectively removing each applied film from areas that would not experience performance benefit from the applied stressed film.

Disclosed is a method of forming a bottle shaped trench in a substrate which includes forming at least one trench having an upper portion and a lower portion into a semiconductor substrate, the at least one trench having vertical sidewalls that extend to a common bottom wall; implanting ions into the semiconductor substrate abutting the upper portion of the at least one trench to form an amorphous region in the semiconductor substrate abutting the upper portion of the at least one trench; and etching the lower portion of the at least one trench selective to the amorphous region to provide an elongated bottom portion which extends laterally beyond the upper portion.

An electrical interconnection system with high speed, differential electrical connectors. The connector is assembled from wafers each containing a column of conductive elements, some of which form differential pairs. A housing for the wafer is formed with regions of higher and lower dielectric constant material. The regions of lower dielectric constant material are selectively positioned adjacent longer signal conductors of the differential pairs. The material may be preferentially placed along curved segments of the differential pair to reduce crosstalk in the connector while reducing skew.

Articles comprising substantially uniform porous coatings, which may be photopatterned, are provided. The use of such porous coatings increases the surface density of attached compounds within, for example, ligand arrays prepared by methods such as regionally selective solid-phase chemical synthesis. Arrays prepared using the porous coatings may be used within a variety of diagnostic and drug discovery assays.

This invention relates to novel compositions comprising regioselectively substituted cellulose esters. One aspect of the invention relates to processes for preparing regioselectively substituted cellulose esters from cellulose dissolved in ionic liquids. Another aspect of the invention relates to the utility of regioselectively substituted cellulose esters in applications such as protective and compensation films for liquid crystalline displays.

A nitride semiconductor device includes: a first semiconductor layer; a second semiconductor layer provided on the first semiconductor layer; a p-type region selectively provided in the second semiconductor layer; a gate insulating film provided on the p-type region; a field insulating film provided on the second semiconductor layer surrounding the p-type region; a first and a second main electrodes connected to the second semiconductor layer on opposite sides of the p-type region; and a control electrode provided on the gate insulating film. The first semiconductor layer is made of an undoped nitride semiconductor. The second semiconductor layer is made of an undoped or n-type nitride semiconductor having a wider bandgap than the first semiconductor layer. At least a part of the control electrode extends on the field insulating film.

A method for regioselective synthesis of CCl-779 based on boronate chemistry is provided. Also provided are novel intermediates useful in this method.

This invention relates a cellulose solution comprising cellulose and at least one tetraalkylammonium alkylphosphate and processes to produce the cellulose solution. Another aspect of this invention relates to shaped articles prepared from a cellulose solution comprising cellulose and at least one tetraalkylammonium alkylphosphate. Another embodiment of this invention relates to compositions comprising derivatives of cellulose prepared from a cellulose solution comprising at least one tetraalkylammonium alkylphosphate. Another embodiment of this invention relates to compositions comprising regioselectively substituted cellulose esters prepared from a cellulose solution comprising cellulose and at least one tetraalkylammonium alkylphosphate. In another embodiment of the invention, the cellulose esters of the present invention are used as protective and compensation films for liquid crystalline displays.

A method for regioselective synthesis of CCl-779 based on boronate chemistry is provided. Also provided are novel intermediates useful in this method.

A composite stent and a method for making the same are provided.

An acoustic generator, comprising: a source of electro-magnetic radiation; a waveguide coupled to said source; and at least one absorbing region defined in said waveguide, said region being selectively absorbing for portions of said radiation meeting at least one certain criterion and having significantly different absorbing characteristics for radiation not meeting said criterion, both of said radiation portions being suitable for conveyance through said waveguide, wherein said absorbing region converts said radiation into an ultrasonic acoustic field. Optionally, said region comprises a volumetric absorber. Alternatively or additionally, said region comprises a plurality of regions.

The invention relates to the field of image detection, and especially relates to an automobile surface damage classification method and device based on deep learning. According to the method and the device, the classification method and device are provided for the problems in the prior art. Characteristic learning and classification are carried out on input to-be-detected images. Specifically, candidate areas are extracted from the to-be-detected images to by employing an area selective search algorithm, and location information of the candidate areas are recorded; the to-be-detected images are input into a characteristic diagram extraction network model without an output layer, thereby extracting the characteristic vectors of the candidate areas of the to-be-detected images; the characteristic vectors of the candidate areas are input into an SVM classifier to find target characteristic vectors; the locations of the corresponding candidate areas on the to-be-detected images, namely, the target areas of the to-be-detected images, are found according to the locations of the target characteristic vectors in the characteristic diagram; and the target areas of the to-be-detected images are input into an optimum classification network model, and the probabilities of the areas on damage levels are output.

Backthinning in an area selective manner is applied to imaging sensors 12 for use in electron bombarded devices. A further arrangement results in an array of collimators 51 aligned with pixels 42 or groups of pixels providing improved image contrast of such image sensor. Provision of a thin P-doped layer 52 on the illuminated rear surface provides both a diffusion barrier resulting in improved resolution and a functional shield for reference pixels. A gradient in concentration of P-doped layer 52 optimizes electron collection at the pixel array.

A zone-selective-interlocking system for an electrical power distribution system that has at least one upstream breaker and at least one downstream breaker is provided. Each breaker in the power distribution system has a zone-selective-interlocking circuit that includes a zone-selective-interlocking-input circuit and a zone-selective-output circuit. The zone-selective-interlocking system also includes a monitoring device to monitor the voltage sent from the zone-selective-interlocking-output circuit of the at least one downstream breaker to the zone-selective-interlocking-input circuit of the at least one upstream breaker and determine whether there is a proper or improper connection between the upstream and downstream breaker and whether the downstream breaker is sending a restraint signal to the upstream breaker.

A bioabsorbable polymeric stent with time dependent structure and properties and methods of treating a diseased blood vessel with the bioabsorable polymeric stent are disclosed. The structure and properties of the stent change with time and allow the vessel to be restored to a natural unstented state. The bioabsorbable stent loses mechanical integrity in a controlled manner due to modification of selected structural elements.

There is disclosed a method of selectively extracting ions comprising the steps of:providing a supply of ions in a body of gas;generating a ponderomotive ion trapping potential generally along an axis;generating further potentials to provide an effective potential which prevents ions from being extracted from an extraction region;trapping ions in said effective potential; andselectively extracting ions of a predetermined m / z ratio or ion mobility from the extraction region;in which the characteristics of the effective potential which prevent ions from being extracted from the extraction region are caused, at least in part, by the generation of the ponderomotive ion trapping potential.

The present disclosure provides a method for enriching for multiple genomic regions using a first bait set that selectively hybridizes to a first set of genomic regions of a nucleic acid sample and a second bait set that selectively hybridizes to a second set of genomic regions of the nucleic acid sample. These bait set panels can selectively enrich for one or more nucleosome-associated regions of a genome, said nucleosome-associated regions comprising genomic regions having one or more genomic base positions with differential nucleosomal occupancy, wherein the differential nucleosomal occupancy is characteristic of a cell or tissue type of origin or disease state.

A method is described for a method for the regioselective liquid-phase pegylation of GRF, which increases the yield of the GRF-PEG conjugate having 1 PEG molecule covalently bound to the e-amino group of Lys12. This method is characterized in that the reaction is carried out in a structuring solvent, such as trifluorethanol.

A zone selective interlocking system for electronic trip circuit breakers includes a plurality of downstream terminals, each downstream terminal connecting with at least one of a plurality of downstream electronic trip circuit breakers having input terminals. A restraint input circuit module, including a voltage comparator, is connected to the input terminals of each of the downstream electronic trip circuit breakers and the input terminals are shorted together providing a self-restraint signal for each downstream electronic trip circuit breaker at the occurrence of a downstream fault condition. The system also includes a plurality of upstream terminals, each upstream terminal connecting with at least one of a plurality of upstream electronic trip circuit breakers having input terminals. The restraint input circuit module is connected to the input terminals of each of the upstream electronic trip circuit breakers for receiving a signal indicative of the downstream fault condition and wherein the restraint input circuit module is self-sourcing. An output circuit module including an opto-isolator is connected to each of the upstream electronic trip circuit breakers and each of the downstream electronic trip circuit breakers for providing galvanic isolation between circuit breakers in a restrained mode and circuit breakers in an unrestrained mode.

Compounds that include a targeting moiety bound to a regioselective leaving group are useful for preparing imaging agents. The imaging agents can be isolated from by-products derived from the leaving group based on differences in the chemical attributes (e.g., net charge or polarity) of the molecules or physical attributes of the molecules through the use of a solid support. Methods of producing an imaging agent include the steps of providing a compound that includes a targeting moiety bound to a support via a linker group that contains a site for regioselective substitution of a detectable species, contacting the compound with a solution containing the detectable species, and recovering the imaging agent. Kits which include a first container having therein a solution containing a detectable species and a second container having therein a compound that includes a targeting moiety bound to a support via a leaving group that contains a site for regioselective substitution of the detectable species are also useful for preparing imaging agents.

Disclosed herein is a regioselective synthesis of compounds represented by formula (I):or a salt, solvate, clathrate, or prodrug thereof, wherein X, Y, R2, R3, R4, R7, R8, R9, R10, m and n are defined as within.

The invention concerns a method (400) and system (100) for providing an adaptive disablement zone (126). The method can include the steps of establishing (412) at least one disablement zone, selectively disabling (420) any number of wireless communications devices (114) in the disablement zone, designating (424) at least one exempt zone (128) and when at least a portion of the exempt zone is located within the disablement zone, selectively exempting (430) the selective disabling of the wireless communications devices that are within the exempt zone. The method can further include the step of maintaining (414) the disablement zone in a fixed position or moving (414) the disablement zone. The method can also include the step of maintaining (426) the exempt zone in a fixed position or moving (426) the exempt zone.