2results about How to "Improve device yield" patented technology

This invention provides a method and apparatus for laser debonding, belonging to the field of semiconductor technology. The method includes the following steps: providing a temporary bonding body for a wafer, the temporary bonding body comprising a silicon carrier, an interposer, a carbon-rich thin film, a bonding layer, and a wafer stacked together; in a vacuum environment, irradiating the temporary bonding body with an infrared pulsed laser, causing interface peeling at the carbon-rich thin film, thus completing the laser debonding between the silicon carrier and the wafer. This invention uses a carbon-rich thin film as the laser release layer, reducing costs. It possesses broad-spectrum, high-efficiency absorption characteristics in the infrared laser band, enhancing laser scattering and light-trapping effects, and improving laser energy absorption efficiency. By performing laser debonding in a vacuum environment, impurities such as microparticles generated during interface peeling can be removed from the cavity, avoiding wafer contamination and interference with the laser path, thus improving the cleanliness, stability, and overall device yield of the debonding process.

This invention provides a method for manufacturing a semiconductor structure, specifically relating to the field of semiconductor technology. The manufacturing method includes the following steps: providing a semiconductor substrate, the semiconductor substrate comprising a first interlayer dielectric layer, a second interlayer dielectric layer, and a metal hard mask layer stacked sequentially, wherein a tungsten plug is formed within the first interlayer dielectric layer; performing trench etching on the second interlayer dielectric layer to form a trench, the bottom of the trench exposing the upper surface of the tungsten plug; forming a tungsten carbide layer on the exposed upper surface of the tungsten plug; removing the metal hard mask layer and the tungsten carbide layer; and filling the trench with a metal material to form a metal layer. This invention can effectively improve the problem of copper layer depression, enhancing interlayer interconnect reliability and device yield.