69 results about "Dose uniformity" patented technology

Dose uniformity of a scanning ion implanter is determined. A base beam current is measured at the beginning and/or the end of a complete scan over the whole substrate area. This base beam current is measured at a time when the measurement should be unaffected by outgassing from a substrate being implanted and a base dose distribution map is then calculated for the scan in question. During the scan itself beam instability events are detected and the magnitude and position in the scan of the detected instability events is measured. Corresponding deviations in the calculated base dose map are determined and subtracted from the previously calculated base dose distribution map to provide a corrected distribution map. By determining overall dose uniformity substractively in this way, good overall accuracy can be obtained with lesser accuracy in the measurement of the beam instability events.

The present invention is directed to implanting ions in a workpiece in a serial implantation process in a manner that produces one or more scan patterns on the workpiece that resemble the size, shape and/or other dimensional aspects of the workpiece. Further, the scan patterns are interleaved with one another and can continue to be produced until the entirety of the workpiece is uniformly implanted with ions.

A technique for improving ion implantation throughput and dose uniformity is disclosed. In one exemplary embodiment, a method for improving ion implantation throughput and dose uniformity may comprise measuring an ion beam density distribution in an ion beam. The method may also comprise calculating an ion dose distribution across a predetermined region of a workpiece that results from a scan velocity profile, wherein the scan velocity profile comprises a first component and a second component that control a relative movement between the ion beam and the workpiece in a first direction and a second direction respectively, and wherein the ion dose distribution is based at least in part on the ion beam density distribution. The method may further comprise adjusting at least one of the first component and the second component of the scan velocity profile to achieve a desired ion dose distribution in the predetermined region of the workpiece.

The invention relates to an X-ray source module pair linear assembly continuous inlet-outlet sample irradiating machine, in particular to a special continuous inlet-outlet sample irradiating device for irradiating bagged blood or Chinese patent medicine and bulk food (such as garlic). The device comprises a linear assembly, an irradiating chamber upper protection cover, an irradiating chamber lower protection cover, a circulating sample conveyor belt, a control table-board and an anode water-cooling circulating system, wherein the linear assembly consists of a plurality of pairs of upper X-ray source modules and lower X-ray source modules. The X-ray source module pair linear assembly continuous inlet-outlet sample irradiating machine has the advantages of high irradiating conversion efficiency, large irradiating angle, continuity for irradiating the sample which is automatically inputted and outputted, uniformity in irradiating dose and the like and is used for substituting the existing widely-used radioactive nuclear radiation source blood irradiating machine, so that the dependence of the irradiating device on the nuclear radiation source can be finally thoroughly avoided, and the potential danger for producing radioactive nuclear pollution to the environment can be eliminated.

The invention discloses a proximity contact scan exposure device which successively comprises the following parts along the optical propagation direction: an illumination system which is used for outputting parallel lights; a mask which is irradiated by the parallel lights to generate emergent light output; a substrate which is positioned below the mask and is irradiated by the emergent lights emitted from the mask; and a working table which supports the mask and the substrate. When the scan exposure device is in use, the mask and the substrate synchronously move with the working table. In comparison with a traditional aligned mask aligner, although the yield of the device provided by the invention is a little lower, dose uniformity is raised such that linewidth uniformity (CDU) is improved. In comparison with a traditional projection type mask aligner, although precision of the device provided by the invention is not such high, projection lens is not required so as to reduce the cost.

The invention provides a scanning and exposure method of a photoetching machine. The method comprises the following steps: two directions which are mutually orthogonal are arranged on a silicon plain of the photoetching machine and the silicon plain is divided into a plurality of exposure field areas, a changeable narrow slit is arranged on the photoetching machine, the changeable narrow slit is provided with cutting lips in the two mutually orthogonal directions, scanning and exposure are carried out on one direction of the exposure field area and then on the other direction of the same exposure field area; when the scanning and exposure are carried out on one direction of the exposure field area, the cutting lips of the changeable narrow slit in the direction are gradually opened to the maximum and then gradually folded to be closed. In the invention, the scanning and exposure are first carried out on one direction of the exposure field area and then on the other direction of the same exposure field area, therefore, dose uniformity of both X direction and Y direction of the exposure field areas are improved, thus improving system performance of exposure dose and uniformity of photoetching line width.

Methods and apparatus are provided for controlling dose uniformity in an ion implantation system. According to one embodiment of the invention, an initial scan waveform is adjusted to obtain a desired uniformity for use in a first implant process, and the adjusted scan waveform is stored. The stored scan waveform is recalled and used in a second implant process. According to a another embodiment of the invention, desired beam parameters are identified and, based on the desired beam parameters, a stored scan waveform is recalled for use in a uniformity adjustment process, and the uniformity adjustment process is performed. According to a further embodiment of the invention, an apparatus is provided that includes a beam profiler for measuring a current distribution of a scanned ion beam. The apparatus also includes a data acquisition and analysis unit for adjusting an initial scan waveform based on a desired current distribution and the measured current distribution for use in a first implant process, storing the adjusted scan waveform, recalling the stored scan waveform, and using the recalled scan waveform in a second implant process.

The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time.

To select a scan distance to be used in scanning a wafer with an implant beam, a dose distribution along a first direction is calculated based on size or intensity of the implant beam and a scan distance. The scan distance is the distance measured in the first direction between a first path and a final path of the implant beam scanning the wafer along a second direction in multiple paths. A relative velocity profile along the second direction is determined based on the dose distribution. Dose uniformity on the wafer is calculated based on the wafer being scanned using the relative velocity profile and the determined dose distribution. The scan distance is adjusted and the preceding steps are repeated until the calculated dose uniformity meets one or more uniformity criteria.

Non uniform ion implantations in a pendulum type of ion implantation are mitigated by adjusting movement of a wafer according to a corresponding non uniform function. More particularly, a non uniform ion implantation function is obtained by measuring and/or modeling ion implantations. Then, movement of a wafer along a second non arcuate scan path is adjusted according to the non uniform ion implantation function to facilitate uniform ion implantations.

The present invention provides a manufacturing method for low temperature polycrystalline silicon thin film transistors, and the method is characterized by including the following steps: a polycrystalline silicon layer, a gate insulation layer and a gate metal layer are formed on a substrate in sequence; one part of the gate metal layer is removed so as to expose one part of the gate insulating layer; and doping ions penetrate the exposed part of the gate insulation layer by the adoption of an ion-injection method. According to the invention, a metal layer is etched only but a silicon nitride and silicon oxide layer is not etched, a dose uniformity of the doping ion injecting is increased, and therefore, an electricity uniformity of the low temperature polycrystalline silicon thin film transistors is improved.

The invention discloses a method for controlling the wafer ion implantation dosage. The hardware comprises an ion beam (1), a wafer (2), a target disk (3), a closed-loop Faraday cup (4), an X-Tilt motor (5), a target platform (6), a linear motor (8), a PMAC controller (9), and a vacuum target chamber (10). In order to reduce particle impurities, process of ion implantation is carried out in the vacuum target chamber. The beam is generated by an ion source, and the processed ion beam (1) should meet requirements in uniformity and parallelism in order to arrive at the target chamber. According to process requirements, an included angle is reserved between the wafer (2) and the vertical direction. The linear motor (8) drives an air bearing to move up and down, and the wafer is ensured to move at constant speed when passing through a beam area. The implantation dosage at a single time and the total number N of scanning times are coordinated, and the N is an even number. According to the method, the scanning speed and the total number of scanning times of the motor are controlled through controlling the implantation dosage at a single time, thereby realizing purposes of being accurate in implantation dosage and improving the dosage uniformity.

The invention discloses a beam transmission system, which comprises a beam jetting device and a target workpiece as a beam transmission terminal. A pair of parallel first rod-shaped quadrupole magnets positioned on the two sides of a beam path respectively is arranged between the beam jetting device and the target workpiece, the sum of the current values in the coils of the two first rod-shaped quadrupole magnets is kept at a first preset value, and the current value in the coil of each first rod-shaped quadrupole magnet constantly changes between a preset upper limit and a preset lower limit. The invention also discloses a beam transmission method realized by utilizing the beam transmission system. According to the invention, the intensity distribution and the angle distribution of the beam can be controlled by controlling the current values of one or two pairs of rod-shaped quadrupole magnets, so as to improve the beam utilization efficiency and further facilitate the optimization of the dose uniformity and the angle uniformity of the beam. Meanwhile, because of the focusing effect of the rod-shaped quadrupole magnets, the beam transmission efficiency is improved, and the beam intensity when the beam is transmitted to the workpiece is increased.

The invention provides a laser packaging device and method. The laser packaging device is used for shooting a laser beam to a packaging base to form a light spot, the light intensity is gradually reduced from the edge of the light spot to the center of the light spot on the surface perpendicular to the direction of the advancing path of the laser beam, and the light spot comprises a first sectionclose to the edge of the light spot and a second section close to the center of the light spot. The light intensity reducing rate of the first section is smaller than that of the second section, and the boundary position of the first section and the second section is a first inflection point. The laser beam with the light spot is used for packaging the packaging base to effectively improve the uniformity of the dosage irradiated to a glass material, and thus the airtightness of the glass material is further improved.