86 results about "Ion beam irradiation" patented technology

According to the present invention, provided are an optical laminate which has excellent adhesiveness between two optically anisotropic layers, and in which an A plate or a layer obtained by fixing a twist-aligned liquid crystal phase, which is as an optically anisotropic layer, has excellent liquid crystal alignment properties, a polarizing plate, and an image display device. An optical laminate of the present invention has: a first optically anisotropic layer formed of a first liquid crystal compound; a second optically anisotropic layer formed of a second liquid crystal compound; and a mixed layer which is disposed between the first optically anisotropic layer and the second optically anisotropic layer and contains a component derived from the first liquid crystal compound and a component derived from the second liquid crystal compound, the first optically anisotropic layer is a C plate, the second optically anisotropic layer is an A plate or a layer obtained by fixing a twist-aligned liquid crystal phase, the mixed layer further contains a photo-alignment compound, and in an analysis of components of the optical laminate in a depth direction by time-of-flight secondary ion mass spectrometry with ion beam irradiation from a surface of the optical laminate on a first optically anisotropic layer side toward a second optically anisotropic layer side, predetermined requirements are satisfied.

The invention provides an ion beam irradiation configuration optimization method based on a computer storage medium, and aims to improve treatment accuracy and effectiveness. According to the method, image data of a target area are obtained through three-dimensional scanning, three-dimensional discretization processing is carried out, and a voxel angle range matrix is constructed. The preference of each voxel for different ion beam energy is quantified by using a favor value function, and the energy layer of each angle is dynamically calculated and distributed in combination with the optimization of the irradiation angle. The system can monitor feedback data in real time, automatically adjust energy configuration and irradiation angle, and ensure optimal energy coverage of a target area. According to the method, the treatment effect is improved, damage to normal tissue is reduced by accurately controlling energy transmission, and the safety and efficiency of treatment are improved. Through the optimization and dynamic adjustment mechanism, a personalized treatment scheme can be provided for each patient, and efficient and accurate treatment on a complex target region is achieved.

The invention relates to a preparation method of a three-dimensional atom probe sample, which comprises the following steps: S1, imaging a sample under a scanning electron microscope, and marking an interested area on the surface of the sample; s2, cutting the region to expose the section of the sample; s3, performing ion beam irradiation on the cross section so as to generate bright and dark contrast beneficial to observation on two sides of a crystal boundary in the cross section; s4, according to the position of the contrast, cutting the sample to form a slice sample containing a grain boundary; and S5, annularly cutting the sheet sample to form a needle point sample containing the crystal boundary. According to the preparation method, efficient and accurate positioning is provided, the sample preparation time is effectively shortened, and the sample preparation success rate is increased.

To provide a sample processing system that can easily determine an appropriate processing condition.SOLUTION: A sample processing system includes a sample processing device that radiates an ion beam onto a sample to process the sample, and an image generating device that generates a predicted image of the sample when processed under a set processing condition using the sample processing device, and the predicted image includes information on the distribution of the irradiation direction of the ion beam.SELECTED DRAWING: Figure 16

The invention discloses a low-energy high-flow strong ion beam material irradiation experiment platform and method, and belongs to the technical field of experiment equipment, the platform comprises a workbench, one side of the upper surface of the workbench is provided with an experiment box body, and the top of the experiment box body is provided with an ion source assembly; a sample test block and an auxiliary experiment component for testing the sample test block are arranged in the experiment box body, and a control assembly is arranged on the other side of the upper surface of the workbench. The position and the angle of the sample test block are adjusted through the driving assembly and the angle adjusting assembly, so that an irradiation area can directly face an ion beam emitting end, the ion beam irradiation precision is improved, after an irradiation experiment is finished, a worker does not need to take out the sample test block, and the working efficiency is improved. The bending and stretching assembly and the monitoring assembly can be used for directly carrying out tensile and bending fatigue tests on the sample test block, so that the sample test block can be effectively prevented from adsorbing impurities in air in the unloading process of the sample test block.

A method and devices for fabricating optical emitters. The method includes disposing a flake of a multi-layer material onto a wafer. The wafer has an aperture over which a portion of the flake is disposed. The flake has a first surface partially in contact with the wafer, and a second surface opposite the first surface. The method further includes disposing a deceleration mask layer adjacent the flake. The deceleration mask layer has a flake-side surface adjacent to the flake, and an exposed surface opposite the flake-side surface. An ion beam is directed at the exposed surface of the deceleration mask layer to decelerate ions of the ion beam until at least a portion of the ions are implanted in the flake.

This ion implantation apparatus comprises: an ion source 20 for generating plasma including desired ions; an extraction unit 22 for extracting an ion group including the desired ions via a first opening OP1 in the ion source 20 to generate an ion beam IB; and an injection processing chamber for irradiating a wafer with the ion beam IB. The extraction unit 22 includes: a reference electrode 22b to which a reference potential Vgnd is applied, the reference electrode 22b having a second opening OP2 through which the ion beam IB passes from downstream to upstream in a traveling direction of the ion beam IB; a suppression electrode 22a to which a suppression potential Vsup lower than the reference potential Vgnd is applied, the suppression electrode 22a having a third opening OP3 through which the ion beam IB passes; and a movable conductor 22e having a fourth opening OP4 through which the ion beam IB passes, and having a variable distance from the first opening OP1 in the traveling direction.

To improve the efficiency of memory device manufacturing.SOLUTION: A manufacturing apparatus according to an embodiment includes a wafer holding unit 90 that holds a wafer 100, an ion source 91 that outputs an ion beam, a shutter holding unit 95A that holds a shutter 93 and positions the shutter 93 between the wafer holding unit 90 and the ion source 91 when preventing the wafer 100 from being irradiated with the ion beam, and a target holding unit 95B that holds a target 97 that holds a through hole 970 and positions the target 97 between the wafer holding unit 90 and the ion source 91 when a first layer including a component of the target 97 is formed on the wafer.SELECTED DRAWING: Figure 7

The present application relates to a kind of ion beam fast scanning irradiation system, comprising: target area design module, for obtaining irradiation target area based on the pre-acquired 4DCT scanning and motion curve data and design requirement;Scan sequence generation module is used to generate treatment planning file according to irradiation target area, and the scan point weight distribution is optimized, and the scan point sequence corresponding to the energy fault of irradiation target area is obtained;Ion beam irradiation module is used to send the scan point sequence generated to accelerator treatment control system, and the corresponding ion beam flow is generated by accelerator treatment control system.The present application will evenly distribute the repeated scanning on motion phase, so that each phase (or in the motion phase of control window) can be effectively irradiated, ensure that target area is evenly covered with high dose, and can be widely applied in ion beam radiotherapy field.

Disclosed herein is a composition comprising a core particle; and a shell; where the shell has a different composition from the core particle and is disposed on the core to form a core-shell particle; where the shell is homogeneous having a thickness of 500 micrometers or less and covers a part or the entire outer surface of the core particle; and where the shell is deposited via physical vapor deposition. Disclosed herein too is a method of producing core-shell particles, the method comprising disposing core particles on a substrate holder that lies in a vacuum chamber; applying a vibration to the substrate holder to produce a resonance in the core particles; fluidizing the core particles by virtue of the applied vibration or fluidizing the core particles in the substrate holder with a stream of.fluid; irradiating the core particles with an ion beam to etch, dope or increase surface area of the core particles; and coaling the core particles with a shell using physical vapor deposition.

The invention discloses an atomic force microscope probe and a preparation method thereof, and the method comprises the steps: forming a gold film on the surface of a substrate; forming a metal adhesion film on the surface of the gold film; etching the metal adhesion film, the gold film and the substrate to form a diaphragm groove and an initial pointed cone structure; performing first ion beam irradiation on the initial pointed cone structure to form a pointed cone structure, wherein the tip of the pointed cone structure is provided with alloy; after the first ion beam irradiation, chemical vapor deposition is carried out, and divergent gallium arsenide nanowire whiskers are formed at the tip of the pointed cone structure; the divergent gallium arsenide nanowire whiskers are subjected to second ion beam irradiation, so that the divergent gallium arsenide nanowire whiskers are gathered to form a single gallium arsenide nanowire probe, the ion beam adopted by the first ion beam irradiation contains gallium ions, and the extension direction of the gallium arsenide nanowire probe is parallel to the ion beam direction of the second ion beam irradiation. According to the invention, the preparation process can be simplified, the preparation difficulty is reduced, the mechanical stability of the probe is good, and the direction is controllable.

We provide ion implantation technology that can achieve the desired implantation profile. [Solution] The ion implantation method comprises: irradiating a wafer at a first temperature with a first ion beam set to an angle condition of the ion beam such that the incident angle is sufficiently smaller than the critical angle at which channeling occurs with respect to the crystal axis of the wafer, at a predetermined position on the surface of the wafer; and, after irradiation with the first ion beam, irradiating a wafer at a second temperature different from the first temperature with a second ion beam set to the same angle condition of the ion beam as the first ion beam at a predetermined position on the surface of the wafer. The angle condition of the ion beam is set by adjusting the angle of the wafer, thereby forming a desired implantation profile within the wafer.

The invention relates to a method for inspecting a semiconductor sample (30) using a secondary-ion mass spectrometer (SIMS) with a material-removing focused ion beam (13), having the following steps: - positioning the semiconductor sample (30) on a sample stage (20); - carrying out an analysis scan by irradiating a region-of-interest (ROI) (31) in a semiconductor structure (36) on the semiconductor sample (30) with the ion beam (13); - registering the secondary ions in a mass spectrometer unit (17) in order to generate an electronic image (41) and / or other data set for characterizing the semiconductor structure (36) in the region of the irradiated ROI (31); - using a semiconductor sample (30), with a semiconductor structure (36) and at least one positioning marking (33, 34, 35), and a sample stage (20) which can be moved in at least two dimensions relative to the ion beam (13); - providing navigation data for the semiconductor sample (30) with the semiconductor structure (36) and the positioning marking (33, 34, 35); - carrying out a preliminary scan by means of a data-based navigation to a position marking (33, 34, 35) and irradiating the region of the semiconductor sample (30) with the ion beam (13) using a large scanning region; - adjusting an internal coordinate system for the sample stage (20) by comparing the position of the position marking (33, 34, 35) on the sample stage (20), said position being derived from the navigation data, with the position ascertained by the preliminary scan; - positioning the ion beam (13) over the ROI (31) to be analyzed by means of a data-based navigation of the sample stage (20) and / or laterally deflecting the ion beam (13) using the navigation data; and - carrying out a SIMS analysis scan using a scanning region which is reduced in comparison to the preliminary scan.

The present invention relates to an energy filter element of an ion implantation system for producing wafers, and in particular to an implantation device, an implantation system and a method. The implantation device comprises a filter frame and a filter fixed by the filter frame, wherein the filter is designed to be irradiated by an ion beam.

To simultaneously manufacture a plurality of radioactive isotopes.SOLUTION: A radioactive isotope manufacturing apparatus includes a positive ion source 11 for generating positive ions, a negative ion source 12 for generating negative ions, a joint deflection magnet 13 for joining the positive ions and the negative ions from the positive ion source and the negative ion source, a linear accelerator 15 for simultaneously accelerating the positive ions and the negative ions at reverse phases, a separation deflection magnet 16 for separating the positive ion beam of the positive ions and the negative ion beam of the negative ions, a positive ion beam irradiation target part 17 which has a target 17A for a positive ion beam, and makes the positive ion beam from the separation deflection magnet collide with the target for the positive ion beam, and generates a radioactive isotope, and a negative ion beam irradiation target part 18 which has a target 18A for a negative ion beam, makes the negative ion beam from the separation deflection magnet collide with the target for the negative ion beam, and generates another radioactive isotope, and is configured to generate different radioactive isotopes in parallel with each other.SELECTED DRAWING: Figure 1

The invention relates to the technical field of ion beam irradiation treatment radiation protection, and provides a treatment room radiation shielding system and method based on a rotating beam line, and the system comprises a central equipment room which is internally provided with rotatable treatment equipment; the plurality of treatment rooms are arranged around the central equipment room, and each treatment room is used for treating a patient; the radiation shielding wall body comprises a shielding partition wall and a shielding enclosure wall, the shielding partition wall is arranged between the adjacent treatment rooms, and the shielding enclosure wall is arranged on the periphery of the treatment rooms; a radiation attenuation channel communicated with the treatment room is defined by the shielding partition wall and the shielding enclosing wall. According to the treatment room radiation shielding system based on the rotating beam wire, the radiation attenuation channel communicated with the treatment room is defined by the shielding partition wall and the shielding enclosing wall, the space utilization rate is improved, and the limited space radiation shielding problem of the treatment room is solved.

A specimen machining device for machining a specimen by irradiating the specimen with an ion beam includes an ion source for irradiating the specimen with the ion beam, a shielding member disposed on the specimen to block the ion beam, a specimen stage for holding the specimen, a camera for photographing the specimen, a coaxial illumination device for irradiating the specimen with illumination light along an optical axis of the camera, and a processing unit for determining whether to terminate the machining based on an image photographed by the camera. The processing unit performs processing for acquiring information indicating a target machined width, processing for acquiring the image, processing for measuring a machined width on the acquired image, and processing for terminating the machining when the measured machined width equals or exceeds the target machined width.

The application provides a wear-resistant and corrosion-resistant composite modification method of a magnesium alloy. The method comprises the following steps: laser texturing is performed on the surface of the magnesium alloy, and high-current pulsed ion beams are used to irradiate and strengthen the textured surface of the magnesium alloy. The textured surface of the magnesium alloy is processed and the ion beam irradiation strengthening treatment is performed on the textured surface, so that a textured modified surface with uniform composition and refined structure can be obtained.

To provide an ion beam irradiation device dispensing with replacement of an ion source for changing ions.SOLUTION: An ion beam irradiation device (1) includes an ion supply part (12) capable of switching and supplying ions, an ion trap part (20) for cooling and trapping the ions supplied from the ion supply part, and an acceleration / convergence part (30) for accelerating and converging the ions trapped in the ion trap part. Accordingly, the ion beam irradiation apparatus can perform irradiation by switching ions without replacing the ion source.SELECTED DRAWING: Figure 1

Provided is a substrate holding device comprising: a holder that holds a substrate irradiated with an ion beam; and a driving device that rotates the holder around a predetermined axis to change an inclination of the held substrate with respect to the ion beam, wherein the driving device comprises: a power source that outputs power to rotate the holder; a reduction gear provided in the middle of a power transmission path from the power source to the holder; a first shaft member that rotates together with the holder by a power outputted from the reduction gear; a first detector that detects a rotational motion of the first shaft member; and a power control device that controls the power source based on a detection value of the first detector.

The invention discloses a method for modifying the surface of a copper-chromium contact based on pulsed ion beam irradiation, which comprises the following steps of: firstly cleaning the surface of the copper-chromium contact, then pre-cleaning the copper-chromium contact in a high-vacuum environment, and finally irradiating the surface of the contact by adopting a high-energy pulsed ion beam to form a modified layer. According to the method, surface nanocrystallization, defect repair and component homogenization are achieved through ion beam bombardment, the grain structure is remarkably refined, element distribution is improved, and the surface roughness is reduced, so that the insulation performance, arc ablation resistance and overall reliability of the contact are improved, and the method is suitable for surface strengthening treatment of the copper-chromium contact of the high-voltage vacuum circuit breaker.

Provided is an ion milling apparatus capable of enhancing reproducibility of an ion distribution. The ion milling apparatus includes: an ion source 101; a sample stage 102 on which a sample to be processed by being irradiated with an unfocused ion beam from the ion source 101 is placed; and a measurement member holding unit 106 that holds an ion beam current measurement member 105. A covering material 120 is provided so as to cover at least a surface of the measurement member holding unit 106 and the sample stage 102 facing the ion source 101. A material of the covering material 120 contains, as a main component, an element having an atomic number smaller than that of an element of a material of a structure on which the covering material is provided. The ion beam current measurement member 105 is moved in an irradiation range of the ion beam on a trajectory, which is located between the ion source and the sample stage, in a state where the ion beam is output from the ion source 101 under a first irradiation condition, and an ion beam current flowing when the ion beam current measurement member 105 is irradiated with the ion beam is measured.

The invention discloses a low-temperature target table for an ion beam irradiation test, which comprises a vacuum cavity, a sample table and a refrigerating system, and is characterized in that the sample table is positioned in the vacuum cavity; the refrigerating system comprises a liquid nitrogen container, a low-temperature loop and a liquid nitrogen pump, the liquid nitrogen container is located outside the vacuum cavity, the low-temperature loop penetrates through the interior of the sample table, a liquid nitrogen inlet of the low-temperature loop is detachably connected with the liquid nitrogen container, a liquid nitrogen outlet of the low-temperature loop is connected with the liquid nitrogen pump, and the liquid nitrogen pump is connected with the liquid nitrogen container to form a loop; the liquid nitrogen in the liquid nitrogen container is extracted along with the low-temperature loop, so that the liquid nitrogen cools the sample table, the sample table can be rapidly cooled, and the material radiation requirement under the low-temperature condition is met.

To provide an energy filter element for an ion implantation system used in wafer manufacturing.SOLUTION: The present invention relates to an implantation device, an injection system, and a method. The implantation device includes a filter frame and a filter held by the filter frame, and the filter is designed to be irradiated with ion beam.SELECTED DRAWING: Figure 4

[Problem] To control a divergence angle of an ion beam when generating plasma and irradiating the ion beam. [Solution] An ion beam irradiation device 10 has a plasma generation unit 11 that generates a plasma 12 using a high frequency antenna 13 and further comprises, in an opening thereof, boundary electrodes 15 and extraction electrodes 16 for irradiating the ion beam from an irradiation hole H. Moreover, control electrodes 14 are provided further to the inner side of the plasma generation unit 11 than the boundary electrodes 15, and space potential probes 17 for detecting an electric field in the vicinity of the plasma interface are provided between the boundary electrodes 15 and the extraction electrodes 16. The detection result of the space potential probes 17 is amplified by an amplifier 20, the phase is adjusted by a phase adjustment circuit 21, and a high frequency transmitter 22 energizes the control electrodes 14 according to the signal.　A high-frequency electric field RF2 generated by the energizing of the control electrodes 14 interferes with a plasma generation electric field RF1, and thereby vibration at the plasma interface changes, and the divergence angle of the ion beam can be changed.

A focused ion beam apparatus includes a controller configured to: define an actual working space defined by a scanning point of an electron beam and a focusing distance of the electron beam; irradiate a sample with the electron beam using an electron beam column and acquire a plurality of electron microscope images of the sample with different observation orientations, respectively; create a three-dimensional model including real space information of the sample based on the plurality of electron microscope images; change an attitude of the sample; acquire, from the three-dimensional model, a two-dimensional image of the sample; determine a predetermined range to be irradiated with an ion beam using the two-dimensional image; and process the sample by irradiating the predetermined range with the ion beam using an ion beam column.

This ion implantation apparatus comprises: an ion source 20 for generating plasma including desired ions; an extraction unit 22 for extracting an ion group including the desired ions via a first opening OP1 in the ion source 20 to generate an ion beam IB; and an injection processing chamber for irradiating a wafer with the ion beam IB. The extraction unit 22 includes: a reference electrode 22b to which a reference potential Vgnd is applied, the reference electrode 22b having a second opening OP2 through which the ion beam IB passes from downstream to upstream in a traveling direction of the ion beam IB; a suppression electrode 22a to which a suppression potential Vsup lower than the reference potential Vgnd is applied, the suppression electrode 22a having a third opening OP3 through which the ion beam IB passes; and a movable conductor 22e having a fourth opening OP4 through which the ion beam IB passes, and having a variable distance from the first opening OP1 in the traveling direction.

To provide a jig which can attach a sample to a sample holder easily.SOLUTION: A jig 100 is used to attach a sample to a sample holder for a sample processing device which radiates an ion beam to the sample through a shield to process a portion of the sample which protrudes from the shield. The jig includes: a support part 20 for supporting the sample holder attached with the shield; and a guide 30 including a rail 34 and a slider 32 which may move along the rail 34 and moves the sample to the sample holder.SELECTED DRAWING: Figure 1

According to the preparation method and application of the biodegradable special cat litter provided by the invention, efficient, odorless and thorough treatment of cat excrement is realized by constructing a multi-layer synergistic biodegradation system. The core of the system is as follows: firstly, a high-tolerance functional strain is obtained through a composite screening process combining nitrogen ion beam irradiation mutagenesis with multiple stress and brown algae polyphenol; secondly, according to the characteristics of different strains, a multi-mode microbial agent delivery system combining quick release particles, slow release pellets and common bacterial powder is prepared, and quick control over a pollution source and long-acting stable conversion of ammonia gas are achieved; the uricase is embedded by adopting the microcapsules, so that the stability and the catalytic durability of the uricase are remarkably improved; under the combined action of the technologies, finally, the cat litter can rapidly permeate and degrade excrement, ammonia release and peculiar smell generation are effectively controlled, and the comprehensive effects of being small in dosage, long in cleaning period and environmentally friendly are achieved.

This invention relates to a method for detecting a semiconductor sample (30) using a secondary ion mass spectrometer (SIMS) with a material removal focused ion beam (13), comprising the following steps: - positioning the semiconductor sample (30) on a sample stage (20); - performing an analytical scan of a region of interest (ROI) (31) in a semiconductor structure (36) on the semiconductor sample (30) by irradiating it with an ion beam (13); - recording secondary ions in a mass spectrometer unit (17) to generate an electronic image (41) and / or other datasets for characterizing the semiconductor structure (36) within the irradiated ROI (31); - using the semiconductor sample (30) having a semiconductor structure (36) and at least one positioning marker (33, 34, 35), and capable of scanning the ion beam (13) in at least two dimensions. The moving sample stage (20) provides navigation data for the semiconductor sample (30), which includes semiconductor structures (36) and positioning markers (33, 34, 35); it navigates to the positioning markers (33, 34, 35) based on the data and pre-scans the semiconductor sample (30) region with an ion beam (13) with a large scanning range; it calibrates the internal coordinate system of the sample stage (20) by comparing the positions of the positioning markers (33, 34, 35) on the sample stage (20) derived from the navigation data with the positions determined by the pre-scan; it positions the ion beam (13) above the ROI (31) to be analyzed by navigating the sample stage (20) based on the data and / or by lateral deflection of the ion beam (13) according to the navigation data; and it performs a SIMS analysis scan with a scanning range that is reduced relative to the pre-scan range.