500results about "Ion beam tubes" patented technology

A neutron generator with an ion source within a housing may be used for generating neutrons for neutron logging downhole in a wellbore. The ion source within the housing of the neutron generator may include a hot cathode, an ion source cylinder, a first grid separated from the ion source cylinder, and an extractor separated from the ion source cylinder, the extractor having a second grid.

A disturbance magnetic field region provided in an outer peripheral portion of a main magnetic field region of an accelerator has a peeler region in which a strength of a magnetic field decreases toward an outside, a regenerator region in which the strength of the magnetic field increases toward the outside, and a substantially flat region in which the strength of the magnetic field is larger than the strength of the magnetic field of the peeler region and smaller than the strength of the magnetic field of the regenerator region.

An electron impact ion source includes: a first ionization region including an aperture configured to receive a first molecule into the first ionization region, the first ionization region configured to receive an electron beam along a first axis to generate a first ion beam from the first molecule along the first axis; and a second separate ionization region including an inlet configured to receive a second molecule into the second ionization region, the second ionization region configured to receive the electron beam along the first axis to generate a second ion beam from the second molecule along the first axis.

An arc chamber for an ion source defines a chamber volume, and a target material is disposed within the chamber volume. The target material comprises a dopant species and can be contained in a target member. An indirectly heated cathode is positioned within the chamber volume and ionizes a source gas within the chamber volume, defining a plasma having a plasma thermal emission. A target heater selectively heats the target material independently from the plasma thermal emission associated with the plasma. The target heater can be a resistive heating element, inductive heating element, halogen heating element, or a laser configured to selectively heat at least a portion of the target member. The target member can consist of a solid dopant material or can contain a liquid dopant material.

An ion source for generating an ion beam containing aluminum ions is disclosed. The ion source includes a first gas source to introduce an organoaluminium compound into the arc chamber of the ion source. A second gas, different from the first gas, which is a chlorine-containing gas is also introduced to the arc chamber. The chloride co-flow reduces the buildup of decomposition material that occurs within the arc chamber. This buildup may occur at the gas bushing, the extraction aperture or near the repeller. In some embodiments, the second gas is introduced continuously. In other embodiments, the second gas is periodically introduced, based on hours of operation or the measured uniformity of the extracted ion beam. The second gas may be introduced from second gas source or from a vaporizer.

An ion source includes a vaporizer, an arc chamber, and a heat shield. The vaporizer includes a crucible containing an aluminum-containing material and a heater that heats the crucible. The crucible has a gas inlet and a vapor outlet. The arc chamber generates a plasma inside of the arc chamber. The vapor outlet outputs vapor into the arc chamber through a wall of the arc chamber, and the heat shield is provided between the vaporizer and the wall of the arc chamber.

Generation of impurity ions is prevented or reduced in a carbon ion generating device in which a laser-driven ion acceleration system is employed. A carbon ion generating device generates a carbonized region by irradiating a film made of an organic compound with a first laser beam, and generates carbon ions by irradiating at least a part of the carbonized region with a second laser beam.

An ion beam system including a plasma source tube defining a plasma source chamber, a first gas reservoir housing a first gas, a second gas reservoir housing a second gas, a first controller fluidly coupled to the first gas reservoir and configured to control a first flow rate of the first gas, and a second controller fluidly coupled to the second gas reservoir and configured to control a second flow rate of the second gas. The system also includes a first capillary constriction including a first end fluidly coupled to the first controller and a second end fluidly coupled to the plasma source chamber, and a second capillary constriction including a third end fluidly coupled to the second controller and a fourth end fluidly coupled to the plasma source chamber, where the first capillary constriction and the second capillary constriction are distinct.

The present invention relates to a spacecraft electric thruster particularly suitable for both propellant-fed and air-breathing electric space propulsion comprising an ionization chamber (11) for plasma generation which develops along a central development axis (X), wherein the ionization chamber (11) has a chamber inlet (12) configured to allow gas inflow and a chamber outlet (13) configured to allow extraction of ionized gas particles; a power injection assembly (30) configured to perform electron heating for plasma generation inside the ionization chamber (11); a magnetic assembly (20) configured to generate a magnetic field for plasma confinement in the ionization chamber (11); and an ion extraction and acceleration assembly (40) configured to extract ionized gas particles from the ionization chamber (11) through the chamber outlet (13) and accelerate them along an ion acceleration direction (Z), wherein the power injection assembly (30) comprises a microwave power delivery system (31) configured to deliver an electric field oscillating at a selected microwave frequency (f) and to inject the generated oscillating electric field in the ionization chamber (11), and wherein the ionization chamber (11) comprises a plurality of walls (11a, 15,16,41) closed to the passage of microwaves apart from a portion of at least one lateral wall (11a) of the plurality of walls (11a, 15,16,41) at which the power delivery system (31) is coupled to inject the generated oscillating electric field in the ionization chamber (11), and is resonant for electromagnetic fields oscillating at the selected microwave frequency.

An electron impact ion source assembly for use in a mass spectrometer includes an anode extending along an axis and surrounding an ionization volume. The at least two filaments are each configured to thermionically emit electrons and are positioned outside the ionization volume and proximate the anode. The at least two filaments each include an elliptically shaped portion and non-elliptically shaped portions on both ends of the elliptically shaped portion. The non-elliptically shaped portion is configured to be mounted in a fixed position relative to the anode to maintain a constant distance between the elliptically shaped portion and the anode. The elliptically shaped portion extends along a plane that intersects a plane perpendicular to an axis of the anode at a non-zero angle.

An ion beam processing system includes a plasma source configured to generate plasma. A grid assembly includes a first grid including a first plurality of through holes arranged within a first circular aperture, a second grid including a second plurality of through holes arranged within a second circular aperture, and a third grid including a third plurality of through holes arranged within a third circular aperture. An aperture shaping grid is arranged between the first grid and the plasma source and includes an aperture smaller than the first, second and third circular apertures. The aperture has a shape corresponding a profile of a substrate or a shape corresponding to a spatial plasma distribution, tilted at a predetermined angle relative to a plane transverse to an ion travel direction, projected onto the plane.

Provided is a GCIB device capable of changing the energy of ions to be emitted without changing: an extraction electrode arrangement optimized at a specific voltage; an electrode arrangement of a GCIB device having a permanent magnet type magnet for efficiently removing monovalent monomer ions using the voltage; or the magnetic field intensity of the permanent magnet. In addition to the first high-voltage power supply (22a) to the third high-voltage power supply (22c), the GCIB device is also provided with another high-voltage power supply (22d) that generates a positive high voltage or a negative high voltage, and another high-voltage application circuit (27). And another high-voltage application circuit (27) that applies another positive high voltage or negative high voltage from the high-voltage power supply (22d) to the ground electrode portion of the extraction electrode (7) and the ground electrode portions of the electrostatic lenses (9a, 9b).

To provide an ion acceleration method and an ion acceleration device that generate highly monochromatic ions.SOLUTION: There is provided an ion acceleration method comprising: jetting a cluster gas 30 into a vacuum; irradiating the cluster gas 30 with laser light 18 to make the cluster gas 30 into plasma; and ionizing hydrogen 31 included in the cluster gas 30 for acceleration in a traveling direction of the laser light 18, wherein the condensing position of the laser light 18 is set within the cluster gas 30, the laser light 18 has a condensing spot size larger than a cluster 32 in the cluster gas 30 and smaller than a spread range of the cluster gas 30, and the cluster 32 in the cluster gas 30 is a cluster of hydrogen molecules or heavy hydrogen molecules of single kind.SELECTED DRAWING: Figure 1

An ion source for producing an ion beam containing aluminum ions is disclosed. The ion source includes a first gas source for introducing an organoaluminum compound into the arc chamber of the ion source. A second gas, different from the first gas, which is a chlorine-containing gas, is also introduced into the arc chamber. The chloride co-flow reduces the accumulation of decomposition products within the arc chamber. This accumulation may occur in the gas bushing or extraction aperture, or near the repeller. In some embodiments, the second gas is introduced continuously. In other embodiments, the second gas is introduced periodically based on the operating time or the measured uniformity of the extracted ion beam. The second gas may be introduced from a second gas source or a vaporizer.

Systems and methods taught herein generate a non-uniform magnetic field in the ionization region of an ion source to improve robustness in electrical and chemical ionization processes, particularly negative chemical ionization (CI) processes. The non-uniform magnetic field within the ionization volume spatially separates electrons and anions such that anions primarily pass through an ion exit aperture in the ionization chamber while electrons are directed to strike side walls or end walls of the ionization chamber away from the ion exit aperture. As a result, greater numbers of ions exit from the ion source towards a mass analyzer. Systems and methods taught herein also increase the longevity of instrumentation by avoiding damage that can be caused by electrons striking surfaces around apertures.

An ion extraction optics for extracting a plurality of ion beams includes an extraction plate defining an extraction aperture, and a beam blocker located adjacent the extraction aperture and mounted to the extraction plate by a first actuator and a second actuator, wherein the beam blocker and the extraction aperture define a first extraction slit and a second extraction slit, and wherein the first actuator and the second actuator are adapted to move the beam blocker relative to the extraction plate.

The invention relates to a non-contact non-invasive device for generating a gas flow having a low- temperature atmospheric pressure plasma and directing the gas flow towards an affected area (P1). The device comprising a guide member (10) having an inlet opening and an outlet opening (104A), configured to guide the gas flow towards the affected area (P1), the inlet opening being connected to a plasma source gas supply outlet (106), a low-frequency voltage application circuit (2) configured to generate low-frequency, high voltage electric current flowing through the gas flow towards the affected area (P1), a high-frequency voltage application circuit (3) configured to generate high-frequency electric current flowing through the gas flow towards the affected area (140A), a first electrode (6) and a second electrode mechanism (540) located at the guide member (10) and around the gas flow, the second electrode mechanism (540) comprising a plurality of electrode elements, wherein the plurality of electrode elements is arranged to be separated by a dielectric medium, and the plurality of electrode elements is configured to form phase-shifted counter electrode pairs.

An ion source (1) includes: a resonance unit (8) having an ion extraction port (9) from which ions (I) are extracted; an internal conductor (13) that forms a narrow section (16), which is a region (P) where an electric field is concentrated, between the resonance section (8) and the ion extraction port (9); an electromagnetic wave introduction unit (14) that introduces electromagnetic waves (F) resonated by the resonance unit (8); and a gas introduction part (15) that introduces a gas (G), which is a raw material for the ions (I), into the narrow part (16).

An electrospray apparatus comprising a capillary emitter.

A repelling pole assembly is mounted in an arc chamber of an ion implanter. The repelling pole assembly includes a repelling pole, a tubular insert, first and second insulators, a contact member, and a locking member. The repelling electrode has a knob-like body disposed on an inner side of the arc chamber opposite the cathode assembly. The repellent pole shaft is configured to extend through the opening of the wall of the arc chamber to the outside. The repellent pole shaft has a step that narrows the repellent pole shaft. The tubular insert is mounted concentrically with the repellent pole shaft. The first insulator has a collar shape and is attached to the tubular insert such that an inner shoulder of the first insulator abuts an outer side of a wall of the arc chamber. The second insulator is c-shaped and is attached to the first insulator via an outer flange thereof.

To stably form an insulating film of high quality in a reactive ion plating apparatus and method.SOLUTION: In the reactive ion plating apparatus 10, an evaporation material 24 stored in a crucible 20 is heated and evaporated by an electron gun 22. In addition, the ionization power Wd is supplied to the crucible 20 as an anode and the hot cathode filament 34 that emits thermoelectrons as a cathode. Accordingly, the plasma 100 is induced. Further, the reactive gas is introduced into the vacuum chamber 12 through the hollow anode 46, and the hollow anode power Wh is supplied to the hollow anode 46. Accordingly, the hollow anode plasma 200 is induced. A hollow anode filament 48 is provided at a gas discharge port of the hollow anode 46. The hollow anode filament 48 becomes a stable anode by being heated by Joule heat.SELECTED DRAWING: Figure 1

The present invention relates to an ion source device with adjustable plasma density, belonging to the field of semiconductor equipment. A coil is wound around the outside of a discharge chamber of the ion source device with adjustable plasma density; a radio frequency module is connected to the coil; a gas duct is introduced into the ion source chamber and communicates with the discharge chamber; a grid is provided on the same-direction open end faces of the ion source chamber and the discharge chamber; the discharge chamber is composed of two large-diameter discharge chambers and a small-diameter discharge chamber of non-uniform diameters; the large-diameter discharge chamber and the small-diameter discharge chamber are communicated; one end face of the large-diameter discharge chamber is an open end face, and the open end face faces the grid. The present invention relates to an ion source device with adjustable plasma density, which can bombard the middle area and edge area of ​​a wafer independently and as a whole by using coils at different positions, so as to adjust the plasma density distribution of the discharge chamber and ensure etching uniformity.

To provide a negative ion source and a negative ion generation method that can achieve high negative ion generation efficiency.SOLUTION: A housing 108 includes: an introduction port 106 that introduces a sample; a plasma generation region 113 that communicates with the introduction port 106 and generates plasma by electric discharge; a negative ion generation region 114 in which particles dissociated or excited by the reaction between the generated plasma and the sample are negatively ionized; and a draw-out port 107 that communicates with the negative ion generation region 114 and draws out the generated negative ions to the outside. The negative ion generation region 114 is filled with a thermoelectron emitting substance 116 that generates thermoelectron by high-frequency heating.SELECTED DRAWING: Figure 2

A charged particle source for use in x-ray applications, the charged particle source includes (a) a source electrode having an emission surface, the source electrode is configured to emit charged particles of a first polarity towards an extraction element to form a charged particle beam; and (b) an aperture lens that comprises an aperture that is concentric to the source electrode and is configured, due to a bias difference of a second polarity between the source electrode and the aperture lens, to limit an area of the source electrode from which the charged particle beam emanates, the second polarity is opposite to the first polarity.

The extraction assembly may include an extraction plate for placement along a side of the plasma chamber having an extraction aperture elongated along a first direction with an aperture height extending along a second direction perpendicular to the first direction. The extraction plate defines an inner surface along the extraction aperture that is in a first plane. A beam blocker is positioned over the extraction aperture and has an outer surface disposed in a second plane different from the first plane. Thus, the beam blocker overlaps with the extraction plate along a first edge by a first overlap distance and overlaps with the extraction plate along a second edge by a second overlap distance to define a first extraction slit along a first edge of the extraction aperture and a second extraction slit along a second edge of the extraction aperture.

An arc chamber for an ion source defines a chamber volume, and a target material is disposed within the chamber volume. The target material comprises a dopant species and can be contained in a target member. An indirectly heated cathode is positioned within the chamber volume and ionizes a source gas within the chamber volume, defining a plasma having a plasma thermal emission. A target heater selectively heats the target material independently from the plasma thermal emission associated with the plasma. The target heater can be a resistive heating element, inductive heating element, halogen heating element, or a laser configured to selectively heat at least a portion of the target member. The target member can consist of a solid dopant material or can contain a liquid dopant material.

An assembly present in an ion source for supporting an arc chamber upon a base plate includes a first arc support plate, a first screw, and a second screw. The first screw passes through a smooth through-hole in an arm of the first arc support plate and extends into a bore in the base plate. The second (or adjustable) screw passes through a threaded through-hole in an arm of the first arc support plate and engages an upper surface of the base plate itself, and can be used to change the altitude and angle of the first arc support plate relative to the base plate. This adjustment ability improves the beam quality of the ion source.

The present description relates to an ion source device (100) with charge separation, which comprises: - an electron cyclotron resonance source (110); - an electron impact source (130).

An electron impact ion source assembly for a mass spectrometer includes an anode extending along an axis and surrounding an ionization volume. At least two filaments, each configured to emit thermionic electrons, are positioned outside the ionization volume and proximate to the anode. Each of the at least two filaments includes an elliptical portion and a non-elliptical portion at either end of the elliptical portion. The non-elliptical portions are mounted in a fixed position relative to the anode to maintain a constant distance between the elliptical portion and the anode. The elliptical portions extend along a plane that intersects a plane perpendicular to the axis of the anode at a non-zero angle.

To provide an ion source and an ion implantation device that can reduce the work time in assembling or maintaining the ion source.SOLUTION: An ion source 10A includes a first housing 20 in which plasma is generated, and a second housing 30 that accommodates electrodes 31a to 31c. The ion source 10A further includes a fixing device 40 that is disposed in the second housing 30 and fixes the first housing 20 to the second housing 30, and a surge countermeasure component 50 that is disposed in the first housing 20 or the second housing 30. As the fixing device 40 fixes the first housing 20 to the second housing 30, the first housing 20 and the second housing 30 are connected electrically to each other through at least a part of the fixing device 40 and the surge countermeasure component 50.SELECTED DRAWING: Figure 2