362results about "Ion beam tubes" patented technology

A neutron generator with an ion source within a housing may be used for generating neutrons for neutron logging downhole in a wellbore. The ion source within the housing of the neutron generator may include a hot cathode, an ion source cylinder, a first grid separated from the ion source cylinder, and an extractor separated from the ion source cylinder, the extractor having a second grid.

An arc chamber for an ion source defines a chamber volume, and a target material is disposed within the chamber volume. The target material comprises a dopant species and can be contained in a target member. An indirectly heated cathode is positioned within the chamber volume and ionizes a source gas within the chamber volume, defining a plasma having a plasma thermal emission. A target heater selectively heats the target material independently from the plasma thermal emission associated with the plasma. The target heater can be a resistive heating element, inductive heating element, halogen heating element, or a laser configured to selectively heat at least a portion of the target member. The target member can consist of a solid dopant material or can contain a liquid dopant material.

An ion source includes a vaporizer, an arc chamber, and a heat shield. The vaporizer includes a crucible containing an aluminum-containing material and a heater that heats the crucible. The crucible has a gas inlet and a vapor outlet. The arc chamber generates a plasma inside of the arc chamber. The vapor outlet outputs vapor into the arc chamber through a wall of the arc chamber, and the heat shield is provided between the vaporizer and the wall of the arc chamber.

Generation of impurity ions is prevented or reduced in a carbon ion generating device in which a laser-driven ion acceleration system is employed. A carbon ion generating device generates a carbonized region by irradiating a film made of an organic compound with a first laser beam, and generates carbon ions by irradiating at least a part of the carbonized region with a second laser beam.

An ion beam system including a plasma source tube defining a plasma source chamber, a first gas reservoir housing a first gas, a second gas reservoir housing a second gas, a first controller fluidly coupled to the first gas reservoir and configured to control a first flow rate of the first gas, and a second controller fluidly coupled to the second gas reservoir and configured to control a second flow rate of the second gas. The system also includes a first capillary constriction including a first end fluidly coupled to the first controller and a second end fluidly coupled to the plasma source chamber, and a second capillary constriction including a third end fluidly coupled to the second controller and a fourth end fluidly coupled to the plasma source chamber, where the first capillary constriction and the second capillary constriction are distinct.

The present invention relates to a spacecraft electric thruster particularly suitable for both propellant-fed and air-breathing electric space propulsion comprising an ionization chamber (11) for plasma generation which develops along a central development axis (X), wherein the ionization chamber (11) has a chamber inlet (12) configured to allow gas inflow and a chamber outlet (13) configured to allow extraction of ionized gas particles; a power injection assembly (30) configured to perform electron heating for plasma generation inside the ionization chamber (11); a magnetic assembly (20) configured to generate a magnetic field for plasma confinement in the ionization chamber (11); and an ion extraction and acceleration assembly (40) configured to extract ionized gas particles from the ionization chamber (11) through the chamber outlet (13) and accelerate them along an ion acceleration direction (Z), wherein the power injection assembly (30) comprises a microwave power delivery system (31) configured to deliver an electric field oscillating at a selected microwave frequency (f) and to inject the generated oscillating electric field in the ionization chamber (11), and wherein the ionization chamber (11) comprises a plurality of walls (11a, 15,16,41) closed to the passage of microwaves apart from a portion of at least one lateral wall (11a) of the plurality of walls (11a, 15,16,41) at which the power delivery system (31) is coupled to inject the generated oscillating electric field in the ionization chamber (11), and is resonant for electromagnetic fields oscillating at the selected microwave frequency.

An ion beam processing system includes a plasma source configured to generate plasma. A grid assembly includes a first grid including a first plurality of through holes arranged within a first circular aperture, a second grid including a second plurality of through holes arranged within a second circular aperture, and a third grid including a third plurality of through holes arranged within a third circular aperture. An aperture shaping grid is arranged between the first grid and the plasma source and includes an aperture smaller than the first, second and third circular apertures. The aperture has a shape corresponding a profile of a substrate or a shape corresponding to a spatial plasma distribution, tilted at a predetermined angle relative to a plane transverse to an ion travel direction, projected onto the plane.

An ion source for producing an ion beam containing aluminum ions is disclosed. The ion source includes a first gas source for introducing an organoaluminum compound into the arc chamber of the ion source. A second gas, different from the first gas, which is a chlorine-containing gas, is also introduced into the arc chamber. The chloride co-flow reduces the accumulation of decomposition products within the arc chamber. This accumulation may occur in the gas bushing or extraction aperture, or near the repeller. In some embodiments, the second gas is introduced continuously. In other embodiments, the second gas is introduced periodically based on the operating time or the measured uniformity of the extracted ion beam. The second gas may be introduced from a second gas source or a vaporizer.

An ion extraction optics for extracting a plurality of ion beams includes an extraction plate defining an extraction aperture, and a beam blocker located adjacent the extraction aperture and mounted to the extraction plate by a first actuator and a second actuator, wherein the beam blocker and the extraction aperture define a first extraction slit and a second extraction slit, and wherein the first actuator and the second actuator are adapted to move the beam blocker relative to the extraction plate.

The invention relates to a non-contact non-invasive device for generating a gas flow having a low- temperature atmospheric pressure plasma and directing the gas flow towards an affected area (P1). The device comprising a guide member (10) having an inlet opening and an outlet opening (104A), configured to guide the gas flow towards the affected area (P1), the inlet opening being connected to a plasma source gas supply outlet (106), a low-frequency voltage application circuit (2) configured to generate low-frequency, high voltage electric current flowing through the gas flow towards the affected area (P1), a high-frequency voltage application circuit (3) configured to generate high-frequency electric current flowing through the gas flow towards the affected area (140A), a first electrode (6) and a second electrode mechanism (540) located at the guide member (10) and around the gas flow, the second electrode mechanism (540) comprising a plurality of electrode elements, wherein the plurality of electrode elements is arranged to be separated by a dielectric medium, and the plurality of electrode elements is configured to form phase-shifted counter electrode pairs.

An ion source (1) includes: a resonance unit (8) having an ion extraction port (9) from which ions (I) are extracted; an internal conductor (13) that forms a narrow section (16), which is a region (P) where an electric field is concentrated, between the resonance section (8) and the ion extraction port (9); an electromagnetic wave introduction unit (14) that introduces electromagnetic waves (F) resonated by the resonance unit (8); and a gas introduction part (15) that introduces a gas (G), which is a raw material for the ions (I), into the narrow part (16).

An electrospray apparatus comprising a capillary emitter.

To stably form an insulating film of high quality in a reactive ion plating apparatus and method.SOLUTION: In the reactive ion plating apparatus 10, an evaporation material 24 stored in a crucible 20 is heated and evaporated by an electron gun 22. In addition, the ionization power Wd is supplied to the crucible 20 as an anode and the hot cathode filament 34 that emits thermoelectrons as a cathode. Accordingly, the plasma 100 is induced. Further, the reactive gas is introduced into the vacuum chamber 12 through the hollow anode 46, and the hollow anode power Wh is supplied to the hollow anode 46. Accordingly, the hollow anode plasma 200 is induced. A hollow anode filament 48 is provided at a gas discharge port of the hollow anode 46. The hollow anode filament 48 becomes a stable anode by being heated by Joule heat.SELECTED DRAWING: Figure 1

The present invention relates to an ion source device with adjustable plasma density, belonging to the field of semiconductor equipment. A coil is wound around the outside of a discharge chamber of the ion source device with adjustable plasma density; a radio frequency module is connected to the coil; a gas duct is introduced into the ion source chamber and communicates with the discharge chamber; a grid is provided on the same-direction open end faces of the ion source chamber and the discharge chamber; the discharge chamber is composed of two large-diameter discharge chambers and a small-diameter discharge chamber of non-uniform diameters; the large-diameter discharge chamber and the small-diameter discharge chamber are communicated; one end face of the large-diameter discharge chamber is an open end face, and the open end face faces the grid. The present invention relates to an ion source device with adjustable plasma density, which can bombard the middle area and edge area of ​​a wafer independently and as a whole by using coils at different positions, so as to adjust the plasma density distribution of the discharge chamber and ensure etching uniformity.

To provide a negative ion source and a negative ion generation method that can achieve high negative ion generation efficiency.SOLUTION: A housing 108 includes: an introduction port 106 that introduces a sample; a plasma generation region 113 that communicates with the introduction port 106 and generates plasma by electric discharge; a negative ion generation region 114 in which particles dissociated or excited by the reaction between the generated plasma and the sample are negatively ionized; and a draw-out port 107 that communicates with the negative ion generation region 114 and draws out the generated negative ions to the outside. The negative ion generation region 114 is filled with a thermoelectron emitting substance 116 that generates thermoelectron by high-frequency heating.SELECTED DRAWING: Figure 2

A charged particle source for use in x-ray applications, the charged particle source includes (a) a source electrode having an emission surface, the source electrode is configured to emit charged particles of a first polarity towards an extraction element to form a charged particle beam; and (b) an aperture lens that comprises an aperture that is concentric to the source electrode and is configured, due to a bias difference of a second polarity between the source electrode and the aperture lens, to limit an area of the source electrode from which the charged particle beam emanates, the second polarity is opposite to the first polarity.

The extraction assembly may include an extraction plate for placement along a side of the plasma chamber having an extraction aperture elongated along a first direction with an aperture height extending along a second direction perpendicular to the first direction. The extraction plate defines an inner surface along the extraction aperture that is in a first plane. A beam blocker is positioned over the extraction aperture and has an outer surface disposed in a second plane different from the first plane. Thus, the beam blocker overlaps with the extraction plate along a first edge by a first overlap distance and overlaps with the extraction plate along a second edge by a second overlap distance to define a first extraction slit along a first edge of the extraction aperture and a second extraction slit along a second edge of the extraction aperture.

An arc chamber for an ion source defines a chamber volume, and a target material is disposed within the chamber volume. The target material comprises a dopant species and can be contained in a target member. An indirectly heated cathode is positioned within the chamber volume and ionizes a source gas within the chamber volume, defining a plasma having a plasma thermal emission. A target heater selectively heats the target material independently from the plasma thermal emission associated with the plasma. The target heater can be a resistive heating element, inductive heating element, halogen heating element, or a laser configured to selectively heat at least a portion of the target member. The target member can consist of a solid dopant material or can contain a liquid dopant material.

An assembly present in an ion source for supporting an arc chamber upon a base plate includes a first arc support plate, a first screw, and a second screw. The first screw passes through a smooth through-hole in an arm of the first arc support plate and extends into a bore in the base plate. The second (or adjustable) screw passes through a threaded through-hole in an arm of the first arc support plate and engages an upper surface of the base plate itself, and can be used to change the altitude and angle of the first arc support plate relative to the base plate. This adjustment ability improves the beam quality of the ion source.

The present description relates to an ion source device (100) with charge separation, which comprises: - an electron cyclotron resonance source (110); - an electron impact source (130).

An electron impact ion source assembly for a mass spectrometer includes an anode extending along an axis and surrounding an ionization volume. At least two filaments, each configured to emit thermionic electrons, are positioned outside the ionization volume and proximate to the anode. Each of the at least two filaments includes an elliptical portion and a non-elliptical portion at either end of the elliptical portion. The non-elliptical portions are mounted in a fixed position relative to the anode to maintain a constant distance between the elliptical portion and the anode. The elliptical portions extend along a plane that intersects a plane perpendicular to the axis of the anode at a non-zero angle.

To provide an ion source and an ion implantation device that can reduce the work time in assembling or maintaining the ion source.SOLUTION: An ion source 10A includes a first housing 20 in which plasma is generated, and a second housing 30 that accommodates electrodes 31a to 31c. The ion source 10A further includes a fixing device 40 that is disposed in the second housing 30 and fixes the first housing 20 to the second housing 30, and a surge countermeasure component 50 that is disposed in the first housing 20 or the second housing 30. As the fixing device 40 fixes the first housing 20 to the second housing 30, the first housing 20 and the second housing 30 are connected electrically to each other through at least a part of the fixing device 40 and the surge countermeasure component 50.SELECTED DRAWING: Figure 2

An ion source having a thermionically-emitting cathode coupled to a plasma chamber and is exposed to a plasma chamber environment. A first power supply is coupled to a first filament associated with the thermionically-emitting cathode and is configured to selectively supply a first power to the first filament to heat the first filament to a first temperature and induce a thermionic emission from the thermionically-emitting cathode. A non-thermionically emitting cathode is coupled to the plasma chamber and exposed to the plasma chamber environment. A second power supply supplies a second power to a second filament associated with the non-thermionically emitting cathode and heats the second filament and the non-thermionically emitting cathode to a second temperature while not inducing thermionic emission from the non-thermionically emitting cathode, where condensation within the plasma chamber environment is minimized. A controller can control the first and second power supplies to provide constant power or emission.

This aims to increase the current flow rate of the ion beam containing aluminum ions drawn from the ion source, while also achieving stable ion beam extraction. [Solution] The ion source IS comprises a plasma generation chamber 3 and an aluminum-containing material 1 placed inside the plasma generation chamber 3. The aluminum-containing material 1 is an intermetallic compound, and the potential of the aluminum-containing material 1 is lower than the potential of the plasma generation chamber 3.

To provide practical implementation of particle-induced X-ray emission (PIXE) for a focused ion beam device or for a dual beam device having both a focused ion beam and a scanning microscope function.SOLUTION: An analytical method includes the steps of: guiding ions including a mixture of a proton and a non-hydrogen ion onto a specimen, on condition that kinetic energy of the ion of the mixture is 50 kiloelectron volt (keV) or less; and detecting and measuring an X-ray emitted from the specimen in response to collision of the proton and the non-hydrogen ion with the top of the specimen.SELECTED DRAWING: Figure 1A

The invention provides a low-energy pulse ion source which can be applied to the technical field of ion sources. The ion source comprises a plurality of units which are arranged at intervals along a preset direction, and the plurality of units comprise a first repulsion electrode unit which is used for pushing generated initial ions along the preset direction to obtain an initial ion beam; the first focusing unit is used for primarily focusing the initial ion beam in a direction perpendicular to a preset direction to obtain a first focused ion beam; the second repulsion electrode unit is used for adjusting the kinetic energy of first focused ions in the first focused ion beam, so that the movement speeds of the ions are equal, and a constant-speed ion beam is obtained; the second focusing unit is used for carrying out secondary focusing on the constant-speed ion beam in the direction perpendicular to the preset direction to obtain a second focused ion beam; and the speed reduction unit is used for reducing the kinetic energy of the second focused ion beam to obtain a target ion source.

To provide an ion source and an accelerator, as well as a method for generating ions and accelerating those ions in the ion source.SOLUTION: A nuclear reaction generation device includes a chamber configured to contain gas and include a target. The nuclear reaction generation device also includes a filament provided within the chamber and a voltage source configured to apply a first positive voltage to the filament relative to the chamber. The first positive voltage is configured to heat the filament to a temperature that causes thermionic emission and generates multiple thermions. The multiple thermions are configured to ionize the gas and generate positive ions in the chamber. The target is configured such that nuclear reactions occur when the positive ions interact with the target.SELECTED DRAWING: Figure 1

An ion source that includes a cathode near a first end plate and a non-planar second end plate is disclosed. The non-planar second end plate serves to counteract the effect of the plasma on the second end plate. In some embodiments, the plasma has the ability to erode the second end plate. Rather than making the entire second end plate thicker, the second end plate is only made thicker in the regions that are affected by the plasma. In this way, less material is used in the production of the second end plate, and increased lifetime is achieved. This concept may also be used in environments where the plasma serves to deposit material on the second end plate.

The invention relates to a method for the surface treatment of a substrate (B), in particular as a preparation step for a method for connecting the substrate to a further substrate, comprising:-providing a substrate (B) having a bonding surface provided for connection,-treating (100) the substrate (B) at least in partial regions of the bonding surface in order to form an amorphous layer (C) having a first thickness (D1), wherein primary particle radiation is preferably used for forming the amorphous layer (C), and-reducing (200) the layer thickness of the amorphous layer (C), preferably to a second thickness (D2).