258results about "Ion beam tubes" patented technology

Generation of impurity ions is prevented or reduced in a carbon ion generating device in which a laser-driven ion acceleration system is employed. A carbon ion generating device generates a carbonized region by irradiating a film made of an organic compound with a first laser beam, and generates carbon ions by irradiating at least a part of the carbonized region with a second laser beam.

The present invention relates to a spacecraft electric thruster particularly suitable for both propellant-fed and air-breathing electric space propulsion comprising an ionization chamber (11) for plasma generation which develops along a central development axis (X), wherein the ionization chamber (11) has a chamber inlet (12) configured to allow gas inflow and a chamber outlet (13) configured to allow extraction of ionized gas particles; a power injection assembly (30) configured to perform electron heating for plasma generation inside the ionization chamber (11); a magnetic assembly (20) configured to generate a magnetic field for plasma confinement in the ionization chamber (11); and an ion extraction and acceleration assembly (40) configured to extract ionized gas particles from the ionization chamber (11) through the chamber outlet (13) and accelerate them along an ion acceleration direction (Z), wherein the power injection assembly (30) comprises a microwave power delivery system (31) configured to deliver an electric field oscillating at a selected microwave frequency (f) and to inject the generated oscillating electric field in the ionization chamber (11), and wherein the ionization chamber (11) comprises a plurality of walls (11a, 15,16,41) closed to the passage of microwaves apart from a portion of at least one lateral wall (11a) of the plurality of walls (11a, 15,16,41) at which the power delivery system (31) is coupled to inject the generated oscillating electric field in the ionization chamber (11), and is resonant for electromagnetic fields oscillating at the selected microwave frequency.

An ion beam processing system includes a plasma source configured to generate plasma. A grid assembly includes a first grid including a first plurality of through holes arranged within a first circular aperture, a second grid including a second plurality of through holes arranged within a second circular aperture, and a third grid including a third plurality of through holes arranged within a third circular aperture. An aperture shaping grid is arranged between the first grid and the plasma source and includes an aperture smaller than the first, second and third circular apertures. The aperture has a shape corresponding a profile of a substrate or a shape corresponding to a spatial plasma distribution, tilted at a predetermined angle relative to a plane transverse to an ion travel direction, projected onto the plane.

An ion source for producing an ion beam containing aluminum ions is disclosed. The ion source includes a first gas source for introducing an organoaluminum compound into the arc chamber of the ion source. A second gas, different from the first gas, which is a chlorine-containing gas, is also introduced into the arc chamber. The chloride co-flow reduces the accumulation of decomposition products within the arc chamber. This accumulation may occur in the gas bushing or extraction aperture, or near the repeller. In some embodiments, the second gas is introduced continuously. In other embodiments, the second gas is introduced periodically based on the operating time or the measured uniformity of the extracted ion beam. The second gas may be introduced from a second gas source or a vaporizer.

An ion extraction optics for extracting a plurality of ion beams includes an extraction plate defining an extraction aperture, and a beam blocker located adjacent the extraction aperture and mounted to the extraction plate by a first actuator and a second actuator, wherein the beam blocker and the extraction aperture define a first extraction slit and a second extraction slit, and wherein the first actuator and the second actuator are adapted to move the beam blocker relative to the extraction plate.

An ion source (1) includes: a resonance unit (8) having an ion extraction port (9) from which ions (I) are extracted; an internal conductor (13) that forms a narrow section (16), which is a region (P) where an electric field is concentrated, between the resonance section (8) and the ion extraction port (9); an electromagnetic wave introduction unit (14) that introduces electromagnetic waves (F) resonated by the resonance unit (8); and a gas introduction part (15) that introduces a gas (G), which is a raw material for the ions (I), into the narrow part (16).

To stably form an insulating film of high quality in a reactive ion plating apparatus and method.SOLUTION: In the reactive ion plating apparatus 10, an evaporation material 24 stored in a crucible 20 is heated and evaporated by an electron gun 22. In addition, the ionization power Wd is supplied to the crucible 20 as an anode and the hot cathode filament 34 that emits thermoelectrons as a cathode. Accordingly, the plasma 100 is induced. Further, the reactive gas is introduced into the vacuum chamber 12 through the hollow anode 46, and the hollow anode power Wh is supplied to the hollow anode 46. Accordingly, the hollow anode plasma 200 is induced. A hollow anode filament 48 is provided at a gas discharge port of the hollow anode 46. The hollow anode filament 48 becomes a stable anode by being heated by Joule heat.SELECTED DRAWING: Figure 1

A charged particle source for use in x-ray applications, the charged particle source includes (a) a source electrode having an emission surface, the source electrode is configured to emit charged particles of a first polarity towards an extraction element to form a charged particle beam; and (b) an aperture lens that comprises an aperture that is concentric to the source electrode and is configured, due to a bias difference of a second polarity between the source electrode and the aperture lens, to limit an area of the source electrode from which the charged particle beam emanates, the second polarity is opposite to the first polarity.

The extraction assembly may include an extraction plate for placement along a side of the plasma chamber having an extraction aperture elongated along a first direction with an aperture height extending along a second direction perpendicular to the first direction. The extraction plate defines an inner surface along the extraction aperture that is in a first plane. A beam blocker is positioned over the extraction aperture and has an outer surface disposed in a second plane different from the first plane. Thus, the beam blocker overlaps with the extraction plate along a first edge by a first overlap distance and overlaps with the extraction plate along a second edge by a second overlap distance to define a first extraction slit along a first edge of the extraction aperture and a second extraction slit along a second edge of the extraction aperture.

An assembly present in an ion source for supporting an arc chamber upon a base plate includes a first arc support plate, a first screw, and a second screw. The first screw passes through a smooth through-hole in an arm of the first arc support plate and extends into a bore in the base plate. The second (or adjustable) screw passes through a threaded through-hole in an arm of the first arc support plate and engages an upper surface of the base plate itself, and can be used to change the altitude and angle of the first arc support plate relative to the base plate. This adjustment ability improves the beam quality of the ion source.

To provide an ion source and an ion implantation device that can reduce the work time in assembling or maintaining the ion source.SOLUTION: An ion source 10A includes a first housing 20 in which plasma is generated, and a second housing 30 that accommodates electrodes 31a to 31c. The ion source 10A further includes a fixing device 40 that is disposed in the second housing 30 and fixes the first housing 20 to the second housing 30, and a surge countermeasure component 50 that is disposed in the first housing 20 or the second housing 30. As the fixing device 40 fixes the first housing 20 to the second housing 30, the first housing 20 and the second housing 30 are connected electrically to each other through at least a part of the fixing device 40 and the surge countermeasure component 50.SELECTED DRAWING: Figure 2

This aims to increase the current flow rate of the ion beam containing aluminum ions drawn from the ion source, while also achieving stable ion beam extraction. [Solution] The ion source IS comprises a plasma generation chamber 3 and an aluminum-containing material 1 placed inside the plasma generation chamber 3. The aluminum-containing material 1 is an intermetallic compound, and the potential of the aluminum-containing material 1 is lower than the potential of the plasma generation chamber 3.

To provide practical implementation of particle-induced X-ray emission (PIXE) for a focused ion beam device or for a dual beam device having both a focused ion beam and a scanning microscope function.SOLUTION: An analytical method includes the steps of: guiding ions including a mixture of a proton and a non-hydrogen ion onto a specimen, on condition that kinetic energy of the ion of the mixture is 50 kiloelectron volt (keV) or less; and detecting and measuring an X-ray emitted from the specimen in response to collision of the proton and the non-hydrogen ion with the top of the specimen.SELECTED DRAWING: Figure 1A

To provide an ion source and an accelerator, as well as a method for generating ions and accelerating those ions in the ion source.SOLUTION: A nuclear reaction generation device includes a chamber configured to contain gas and include a target. The nuclear reaction generation device also includes a filament provided within the chamber and a voltage source configured to apply a first positive voltage to the filament relative to the chamber. The first positive voltage is configured to heat the filament to a temperature that causes thermionic emission and generates multiple thermions. The multiple thermions are configured to ionize the gas and generate positive ions in the chamber. The target is configured such that nuclear reactions occur when the positive ions interact with the target.SELECTED DRAWING: Figure 1

An ion source that includes a cathode near a first end plate and a non-planar second end plate is disclosed. The non-planar second end plate serves to counteract the effect of the plasma on the second end plate. In some embodiments, the plasma has the ability to erode the second end plate. Rather than making the entire second end plate thicker, the second end plate is only made thicker in the regions that are affected by the plasma. In this way, less material is used in the production of the second end plate, and increased lifetime is achieved. This concept may also be used in environments where the plasma serves to deposit material on the second end plate.

The invention relates to a method for the surface treatment of a substrate (B), in particular as a preparation step for a method for connecting the substrate to a further substrate, comprising:-providing a substrate (B) having a bonding surface provided for connection,-treating (100) the substrate (B) at least in partial regions of the bonding surface in order to form an amorphous layer (C) having a first thickness (D1), wherein primary particle radiation is preferably used for forming the amorphous layer (C), and-reducing (200) the layer thickness of the amorphous layer (C), preferably to a second thickness (D2).

The utility model discloses an ion source mounting flange, which relates to the technical field of cooling and comprises a flange body, a cooling groove is arranged at the top of the flange body, circulating cooling liquid is arranged in the cooling groove, a cover plate is arranged on the cooling groove, a liquid inlet is arranged at one end of the cover plate, and a liquid outlet is arranged at the other end of the cover plate. A liquid inlet is formed in one end of the cover plate, a liquid outlet is formed in one end, far away from the liquid inlet, of the cover plate, the liquid inlet and the liquid outlet are both communicated with the cooling tank, the cooling tank is arranged, circulating cooling liquid is arranged in the cooling tank, the cooling liquid injected from the liquid inlet flows to the liquid outlet through the cooling tank, and in the link, the cooling liquid is cooled to the liquid outlet through the cooling tank. Heat generated by the ion source is transmitted to the flange body and then absorbed by the circulating cooling liquid to be taken away, the ion source can be effectively cooled so as to protect the internal structure of the ion source from being damaged, the cooling effect is good, the structure is simple and reasonable, the manufacturing cost is low, and the practicability is high.

The present disclosure relates to an ion implantation tool source and a gas delivery system. The system can include a gas source comprising one or more gas supply containers, an ion implanter arc chamber connected to the gas source, and a gallium target contained within the ion implanter arc chamber. The one or more gas supply containers can supply a mixture of hydrogen and fluoride gas. The hydrogen can be from 5% to 60% of the gas mixture.

Disclosed are an ion beam device, an ion source apparatus and a grid structure thereof. The grid structure is used to guide out an ion beam. The grid structure comprises screen grids (1, 1a, 1b, 1c, 1d, 1e) and acceleration grids (2, 2a, 2b, 2c, 2d, 2e), the two being arranged in parallel at intervals. Along a direction perpendicular to the direction of the ion beam being guided out, an equivalent distance of the grid structure has an increasing trend or a decreasing trend, the equivalent distance being the sum of the equivalent thickness of the screen grids (1, 1a, 1b, 1c, 1d, 1e) and the distance between the screen grids (1, 1a, 1b, 1c, 1d, 1e) and the acceleration grids (2, 2a, 2b, 2c, 2d, 2e). By means of optimizing the grid structure of the ion source apparatus, the overall uniformity of an inclined grating can be ensured during inclined grating processing, the cost is low, and the efficiency is high.

The invention discloses a long pulse debugging method for a large-area thermionic cathode ion source, and belongs to the technical field of thermionic cathode ion sources, and the method comprises the steps: carrying out the air inlet vacuum debugging after the ion source is assembled; the insulation and voltage endurance capability is improved through cold high-voltage exercise; turning off high voltage, lighting a lamp filament, applying arc voltage, and cleaning the cavity through arc chamber plasma discharge; the extraction voltage is gradually applied to perform beam extraction exercise, and beam transmission is optimized through diversion coefficient scanning; and finally, the diversion coefficient is reduced, the pulse width is prolonged, and long-pulse discharge debugging is realized. According to the method, a systematic debugging process from vacuum verification, insulation and voltage resistance, cavity cleaning to beam extraction and long pulse discharge is established, the stability and reliability of the ion source can be effectively improved, the breakdown risk is reduced, and a technical basis is provided for long-term stable operation of a large-area hot cathode ion source in the future.

The present invention relates to an ion source (1), in particular an ion thruster for propelling a spacecraft, comprising a reservoir (2) for a propellant (3), a heater (4) for heating the propellant (3), an emitter (6) having one or more projections (7) for emitting ions (3') of the propellant (3), wherein the one or more projections (7) are in fluid communication with the reservoir (2), an extractor (8) facing the emitter (6) for extracting ions (3') of the propellant (3) from the emitter (6) and for accelerating the extracted ions (3') in a direction of emission (R), wherein the heater (4) comprises a projection heating unit (5) and is configured to liquefy solid propellant (3) at the one or more projections (7) by the projection heating unit (5) before the solid propellant (3) in the reservoir (2) is liquefied.

To improve the uniformity of the plasma density in an ionization chamber.SOLUTION: An ion source 1 includes a vaporizer 100 that generates vapor from a solid source material, a first container 10 having a plenum chamber 20 fluidly connected to the vaporizer 100, and a second container 50 having an ionization chamber 50a fluidly connected to the plenum chamber 20, and the first container 10 having a first wall 20a to which the vaporizer 100 is connected and a second wall 20b opposite the first wall 20a, the second wall 20b having a slit 45 opening along the longitudinal direction of the plenum chamber 20, and the vapor is supplied from the plenum chamber 20 to the ionization chamber 50a through the slit 45.SELECTED DRAWING: Figure 2

A fastener for securing a faceplate to the chamber wall of an ion source is disclosed. The ion source is mounted on a source housing having a flange. The fastener includes two straps having a cross-section resembling a rounded rectangle. Each strap has two mounting and engaging portions that abut the outer surface of the faceplate. The mounting portions pass through an opening in the flange and are attached to a tension system located on the opposite side of the flange. The tension system includes at least one spring associated with each strap, which presses the faceplate against the top of the chamber wall. The shape of the straps reduces electrostatic stress between the faceplate and the extraction electrodes located near the faceplate.

The present invention provides a gas cluster ion beam apparatus that enables flat processing of a material substrate by irradiation with a neutral beam during irradiation with a gas cluster ion beam. [Solution] A neutralization gas introduction device 26 is provided for the first vacuum vessel 2. By introducing neutralization gas from the neutralization gas introduction device, the gas cluster ion beam 11 along the beamline in the beam transport system BT collides with the neutralization gas, causing dissociation and neutralization to form a high-energy neutral beam 25. Furthermore, a reflective electrode 28 is provided between the electrostatic lens 9b and the material substrate 15 to which a high voltage equivalent to the acceleration voltage is applied.

A GCIB apparatus that can change the energy of ions to be irradiated onto a substrate without changing the electrode arrangement of the GCIB apparatus that have an extraction electrode arrangement optimized for a specific voltage or a permanent magnet type magnet that effectively removes singly charged monomer ions at that voltage, or the magnetic field strength of the permanent magnet type magnet. A separated high voltage power supply that generates a positive or negative high voltage in addition to the first high voltage power supply, the second high voltage power supply and the third high voltage power supply, and a separated high voltage application circuit that applies a positive or a negative separated high voltage supplied from the separated high voltage power supply to the ground electrode of the extraction electrode and the ground electrode portions of the one or more electrostatic lenses.

Provided herein is an approach to obtain a more uniform ion flux and ion angular distribution across a wafer to minimize etch yield loss due to etch profile variations. In some embodiments, a system may include a plasma source operable to generate a plasma in a plasma chamber enclosed by a chamber housing, the plasma source including a plasma shaper extending from a wall of the chamber housing into the plasma chamber. The plasma shaper may include a shaper wall coupled to the wall of the chamber housing and a shaper end wall connected to the shaper wall, the shaper end wall defining a recess extending toward the wall of the chamber housing.

The invention discloses a neutralizer and a Hall ion source device comprising the neutralizer, and particularly relates to the technical field of ion sources, the technical key points are as follows: an inner magnetic pole and an outer shielding cover are both placed on the upper surface of a support flange, and the lower edge part of the outer shielding cover surrounds the outer edge part of the inner magnetic pole; the outer magnetic pole is arranged above the inner magnetic pole, and the upper edge part of the outer shielding cover surrounds the outer edge part of the outer magnetic pole; a first placing groove is formed in the middle of the top surface of the inner magnetic pole, the neutralizer is mounted in the first placing groove, and the anode ring sleeves the edge part of the top of the inner magnetic pole; the inner shielding cover is arranged between the inner magnetic pole and the outer magnetic pole and is coaxial with the outer shielding cover; a plurality of permanent magnets are arranged between the inner shielding case and the outer shielding case; the air inlet pipe penetrates through the bottom of the supporting flange and the bottom of the inner magnetic pole, extends into the first placing groove and is connected with the neutralizer; a first through hole is formed in the middle of the top face of the outer magnetic pole, and the first through hole, the anode ring and the first containing groove are coaxially arranged.

Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.

A cathode holding assembly attached to an arc chamber support of an ion implantation apparatus, comprising a cathode holding plate (3), an insulator block (4), and a shielding cap (5). The cathode holding plate (3) has an opening (3a) with a protruding outer rib (3d) and a protruding inner rib (3c) facing the shielding cap (5). The protruding portion (4a) of the insulator block (4) passes through the opening (3a) of the cathode holding plate (3). The insulator block (4) abuts against the protruding inner rib (3c) of the opening of the cathode holding plate at the edge of the insulator block (4) to accurately fit the insulator block into the opening (3a) of the cathode holding plate (3). The shielding cap (5) is disposed on the side of the insulator block opposite to the protruding portion (4a). A gap extends between the cathode holding plate (3) and the shielding cap (5), and further between the cathode holding plate (3) and the insulator block (4) and terminates there.