167results about "Ion beam tubes" patented technology

Generation of impurity ions is prevented or reduced in a carbon ion generating device in which a laser-driven ion acceleration system is employed. A carbon ion generating device generates a carbonized region by irradiating a film made of an organic compound with a first laser beam, and generates carbon ions by irradiating at least a part of the carbonized region with a second laser beam.

An ion source for producing an ion beam containing aluminum ions is disclosed. The ion source includes a first gas source for introducing an organoaluminum compound into the arc chamber of the ion source. A second gas, different from the first gas, which is a chlorine-containing gas, is also introduced into the arc chamber. The chloride co-flow reduces the accumulation of decomposition products within the arc chamber. This accumulation may occur in the gas bushing or extraction aperture, or near the repeller. In some embodiments, the second gas is introduced continuously. In other embodiments, the second gas is introduced periodically based on the operating time or the measured uniformity of the extracted ion beam. The second gas may be introduced from a second gas source or a vaporizer.

An ion extraction optics for extracting a plurality of ion beams includes an extraction plate defining an extraction aperture, and a beam blocker located adjacent the extraction aperture and mounted to the extraction plate by a first actuator and a second actuator, wherein the beam blocker and the extraction aperture define a first extraction slit and a second extraction slit, and wherein the first actuator and the second actuator are adapted to move the beam blocker relative to the extraction plate.

An ion source (1) includes: a resonance unit (8) having an ion extraction port (9) from which ions (I) are extracted; an internal conductor (13) that forms a narrow section (16), which is a region (P) where an electric field is concentrated, between the resonance section (8) and the ion extraction port (9); an electromagnetic wave introduction unit (14) that introduces electromagnetic waves (F) resonated by the resonance unit (8); and a gas introduction part (15) that introduces a gas (G), which is a raw material for the ions (I), into the narrow part (16).

To stably form an insulating film of high quality in a reactive ion plating apparatus and method.SOLUTION: In the reactive ion plating apparatus 10, an evaporation material 24 stored in a crucible 20 is heated and evaporated by an electron gun 22. In addition, the ionization power Wd is supplied to the crucible 20 as an anode and the hot cathode filament 34 that emits thermoelectrons as a cathode. Accordingly, the plasma 100 is induced. Further, the reactive gas is introduced into the vacuum chamber 12 through the hollow anode 46, and the hollow anode power Wh is supplied to the hollow anode 46. Accordingly, the hollow anode plasma 200 is induced. A hollow anode filament 48 is provided at a gas discharge port of the hollow anode 46. The hollow anode filament 48 becomes a stable anode by being heated by Joule heat.SELECTED DRAWING: Figure 1

To provide an ion source and an ion implantation device that can reduce the work time in assembling or maintaining the ion source.SOLUTION: An ion source 10A includes a first housing 20 in which plasma is generated, and a second housing 30 that accommodates electrodes 31a to 31c. The ion source 10A further includes a fixing device 40 that is disposed in the second housing 30 and fixes the first housing 20 to the second housing 30, and a surge countermeasure component 50 that is disposed in the first housing 20 or the second housing 30. As the fixing device 40 fixes the first housing 20 to the second housing 30, the first housing 20 and the second housing 30 are connected electrically to each other through at least a part of the fixing device 40 and the surge countermeasure component 50.SELECTED DRAWING: Figure 2

This aims to increase the current flow rate of the ion beam containing aluminum ions drawn from the ion source, while also achieving stable ion beam extraction. [Solution] The ion source IS comprises a plasma generation chamber 3 and an aluminum-containing material 1 placed inside the plasma generation chamber 3. The aluminum-containing material 1 is an intermetallic compound, and the potential of the aluminum-containing material 1 is lower than the potential of the plasma generation chamber 3.

To provide practical implementation of particle-induced X-ray emission (PIXE) for a focused ion beam device or for a dual beam device having both a focused ion beam and a scanning microscope function.SOLUTION: An analytical method includes the steps of: guiding ions including a mixture of a proton and a non-hydrogen ion onto a specimen, on condition that kinetic energy of the ion of the mixture is 50 kiloelectron volt (keV) or less; and detecting and measuring an X-ray emitted from the specimen in response to collision of the proton and the non-hydrogen ion with the top of the specimen.SELECTED DRAWING: Figure 1A

To provide an ion source and an accelerator, as well as a method for generating ions and accelerating those ions in the ion source.SOLUTION: A nuclear reaction generation device includes a chamber configured to contain gas and include a target. The nuclear reaction generation device also includes a filament provided within the chamber and a voltage source configured to apply a first positive voltage to the filament relative to the chamber. The first positive voltage is configured to heat the filament to a temperature that causes thermionic emission and generates multiple thermions. The multiple thermions are configured to ionize the gas and generate positive ions in the chamber. The target is configured such that nuclear reactions occur when the positive ions interact with the target.SELECTED DRAWING: Figure 1

An ion source that includes a cathode near a first end plate and a non-planar second end plate is disclosed. The non-planar second end plate serves to counteract the effect of the plasma on the second end plate. In some embodiments, the plasma has the ability to erode the second end plate. Rather than making the entire second end plate thicker, the second end plate is only made thicker in the regions that are affected by the plasma. In this way, less material is used in the production of the second end plate, and increased lifetime is achieved. This concept may also be used in environments where the plasma serves to deposit material on the second end plate.

The invention discloses a long pulse debugging method for a large-area thermionic cathode ion source, and belongs to the technical field of thermionic cathode ion sources, and the method comprises the steps: carrying out the air inlet vacuum debugging after the ion source is assembled; the insulation and voltage endurance capability is improved through cold high-voltage exercise; turning off high voltage, lighting a lamp filament, applying arc voltage, and cleaning the cavity through arc chamber plasma discharge; the extraction voltage is gradually applied to perform beam extraction exercise, and beam transmission is optimized through diversion coefficient scanning; and finally, the diversion coefficient is reduced, the pulse width is prolonged, and long-pulse discharge debugging is realized. According to the method, a systematic debugging process from vacuum verification, insulation and voltage resistance, cavity cleaning to beam extraction and long pulse discharge is established, the stability and reliability of the ion source can be effectively improved, the breakdown risk is reduced, and a technical basis is provided for long-term stable operation of a large-area hot cathode ion source in the future.

The present invention relates to an ion source (1), in particular an ion thruster for propelling a spacecraft, comprising a reservoir (2) for a propellant (3), a heater (4) for heating the propellant (3), an emitter (6) having one or more projections (7) for emitting ions (3') of the propellant (3), wherein the one or more projections (7) are in fluid communication with the reservoir (2), an extractor (8) facing the emitter (6) for extracting ions (3') of the propellant (3) from the emitter (6) and for accelerating the extracted ions (3') in a direction of emission (R), wherein the heater (4) comprises a projection heating unit (5) and is configured to liquefy solid propellant (3) at the one or more projections (7) by the projection heating unit (5) before the solid propellant (3) in the reservoir (2) is liquefied.

A fastener for securing a faceplate to the chamber wall of an ion source is disclosed. The ion source is mounted on a source housing having a flange. The fastener includes two straps having a cross-section resembling a rounded rectangle. Each strap has two mounting and engaging portions that abut the outer surface of the faceplate. The mounting portions pass through an opening in the flange and are attached to a tension system located on the opposite side of the flange. The tension system includes at least one spring associated with each strap, which presses the faceplate against the top of the chamber wall. The shape of the straps reduces electrostatic stress between the faceplate and the extraction electrodes located near the faceplate.

The present invention provides a gas cluster ion beam apparatus that enables flat processing of a material substrate by irradiation with a neutral beam during irradiation with a gas cluster ion beam. [Solution] A neutralization gas introduction device 26 is provided for the first vacuum vessel 2. By introducing neutralization gas from the neutralization gas introduction device, the gas cluster ion beam 11 along the beamline in the beam transport system BT collides with the neutralization gas, causing dissociation and neutralization to form a high-energy neutral beam 25. Furthermore, a reflective electrode 28 is provided between the electrostatic lens 9b and the material substrate 15 to which a high voltage equivalent to the acceleration voltage is applied.

A GCIB apparatus that can change the energy of ions to be irradiated onto a substrate without changing the electrode arrangement of the GCIB apparatus that have an extraction electrode arrangement optimized for a specific voltage or a permanent magnet type magnet that effectively removes singly charged monomer ions at that voltage, or the magnetic field strength of the permanent magnet type magnet. A separated high voltage power supply that generates a positive or negative high voltage in addition to the first high voltage power supply, the second high voltage power supply and the third high voltage power supply, and a separated high voltage application circuit that applies a positive or a negative separated high voltage supplied from the separated high voltage power supply to the ground electrode of the extraction electrode and the ground electrode portions of the one or more electrostatic lenses.

Provided herein is an approach to obtain a more uniform ion flux and ion angular distribution across a wafer to minimize etch yield loss due to etch profile variations. In some embodiments, a system may include a plasma source operable to generate a plasma in a plasma chamber enclosed by a chamber housing, the plasma source including a plasma shaper extending from a wall of the chamber housing into the plasma chamber. The plasma shaper may include a shaper wall coupled to the wall of the chamber housing and a shaper end wall connected to the shaper wall, the shaper end wall defining a recess extending toward the wall of the chamber housing.

Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.

A cathode holding assembly attached to an arc chamber support of an ion implantation apparatus, comprising a cathode holding plate (3), an insulator block (4), and a shielding cap (5). The cathode holding plate (3) has an opening (3a) with a protruding outer rib (3d) and a protruding inner rib (3c) facing the shielding cap (5). The protruding portion (4a) of the insulator block (4) passes through the opening (3a) of the cathode holding plate (3). The insulator block (4) abuts against the protruding inner rib (3c) of the opening of the cathode holding plate at the edge of the insulator block (4) to accurately fit the insulator block into the opening (3a) of the cathode holding plate (3). The shielding cap (5) is disposed on the side of the insulator block opposite to the protruding portion (4a). A gap extends between the cathode holding plate (3) and the shielding cap (5), and further between the cathode holding plate (3) and the insulator block (4) and terminates there.

Disclosed is a neutron beam generation system for neutron capture therapy. According to an embodiment of the present disclosure, provided is a neutron beam generation system comprising: an injector which generates proton beams; an RF linear accelerator connected to the injector to accelerate the proton beams; a beamline which transmits the proton beams accelerated by the RF linear accelerator; a target which generates fast neutrons by colliding with the proton beams transmitted by the beamline; and a beam shaping assembly provided on one side of the beamline and configured to decelerate the fast neutrons into epithermal neutrons.

A method, apparatus, and computer program product for detecting volatile organic compounds (VOCs) in a gas is provided. An example VOC detector may include a processing device and a detecting region. The detecting region may further include a first interdigital pole electrically connected to a separation voltage source, a second interdigital pole electrically connected to a switch, and an ionization device configured to interact with the gas within the detecting region to create a plurality of ionized gas molecules. To facilitate detection of VOCs, the switch may alternate the connection of the second interdigital pole between a compensation voltage source and the processing device. The processing device may determine a number of volatile organic compounds in the gas based at least in part on a number of ionized gas molecules that contact the second interdigital pole while the second interdigital pole is electrically connected to the processing device.

To provide an ion beam irradiation device dispensing with replacement of an ion source for changing ions.SOLUTION: An ion beam irradiation device (1) includes an ion supply part (12) capable of switching and supplying ions, an ion trap part (20) for cooling and trapping the ions supplied from the ion supply part, and an acceleration / convergence part (30) for accelerating and converging the ions trapped in the ion trap part. Accordingly, the ion beam irradiation apparatus can perform irradiation by switching ions without replacing the ion source.SELECTED DRAWING: Figure 1

The present application provides an ion source, inhibits clogging of a nozzle, and improves the life of a vaporizer. An ion source (IS1, IS2, IS3) includes a vaporizer (C1, C2, C3) having a hollow crucible (2, 32) having a long side direction in one direction and a nozzle (3) connected to the crucible (2, 32); a plasma generation chamber (14) to which a gas is supplied from the crucible (2, 32) through the nozzle (3); and a control device (C) that controls a set temperature of the vaporizer (C1, C2, C3). The control device (C) controls the set temperature of the vaporizer (C1, C2, C3) based on a temperature of the plasma generation chamber (14) or a parameter having a correlation with the temperature of the plasma generation chamber (14) so that a temperature of a connection portion (P2) of the crucible (2, 32) and the nozzle (3) is higher than a temperature of a central portion (P1) of the crucible (2, 32) in the long side direction of the crucible (2, 32).

The application relates to a device and a method for precise assembly of an ECR ion source, which comprises a support, a sliding rail device, a measuring head, a motor device and a control system; the top of the support is provided with the sliding rail device, the sliding rail device is provided with the measuring head, the measuring head is provided with two Hall piece grooves for mounting Hall pieces, the Hall pieces are used for measuring the magnetic field intensity at the corresponding positions of a plasma arc cavity of the ECR ion source; the sliding rail device is further provided with a grating ruler, a reference origin switch, a positive limit switch and a negative limit switch; the control system is electrically connected with the motor device, the grating ruler, the reference origin switch, the positive limit switch and the negative limit switch, the motor device is electrically connected with the sliding rail device, the control system is used for controlling the motor device to work, thereby controlling the movement and rotation of the measuring head in a three-dimensional space through the sliding rail device, determining the magnetic field intensity in any direction, and determining the assembly of related components of the ECR ion source based on the magnetic field intensity, and the application can be widely used in the field of precise assembly.

In a state in which an ion beam from an ion source 101 is shielded by a shutter 102, an ion milling apparatus applies a discharge voltage Vd between an anode 203 and cathodes 201 and 202 and an acceleration voltage Va between the anode and an acceleration electrode 205 with respect to the ion source, and retracts the shutter by a shutter drive source 103 to a position where the ion beam is not shielded after any one of a discharge current flowing between the anode and the cathodes due to discharge and an ion beam current flowing caused by irradiation on the shutter the ion beam falls below a predetermined reference value.

An ion source has an arc chamber and multiple electrode pairs that define a respective plasma column axis within the arc chamber. A source magnet surrounds the arc chamber and defines pole pairs, each respectively associated with the electrode pairs to confine a plasma to the respective plasma column axis. The source magnet can be an electromagnet or a permanent magnet. The electromagnet has coils and a magnetic core to define the pole pairs and confine the plasma to the respective plasma column based on a coil current supplied to the coils. The magnetic core can have movable core members to magnetically couple each of the plurality of pole pairs. The permanent magnet has a magnetic core and movable core members to selectively magnetically couple the permanent magnet to each of the plurality of pole pairs.

The ion implantation method comprises the steps of: heating a solid raw material (90) containing a first metal element at a predetermined operating temperature to generate a vapor containing the first metal element; a plasma generation step for generating plasma (P) containing ions of the first metal element using the vapor; and implanting ions of the first metal element obtained from the plasma (P) into the object to be processed. The solid starting material (90) is provided with: a first material that contains a first metal element and has a melting point, a sublimation point, or a decomposition point that is lower than the operating temperature; and a second material which comprises an oxide, a nitride, a carbide, or a metal, and which has a melting point, a sublimation point, or a decomposition point higher than the operating temperature.

An ion beam system including a plasma source tube defining a plasma source chamber, a first gas reservoir housing a first gas, a second gas reservoir housing a second gas, a first controller fluidly coupled to the first gas reservoir and configured to control a first flow rate of the first gas, and a second controller fluidly coupled to the second gas reservoir and configured to control a second flow rate of the second gas. The system also includes a first capillary constriction including a first end fluidly coupled to the first controller and a second end fluidly coupled to the plasma source chamber, and a second capillary constriction including a third end fluidly coupled to the second controller and a fourth end fluidly coupled to the plasma source chamber, where the first capillary constriction and the second capillary constriction are distinct.

The invention discloses a pre-ignition type high-density ICP (inductively coupled plasma) ion source device and a use method thereof, and particularly relates to the technical field of radio-frequency coupling plasma sources, and the pre-ignition type high-density ICP ion source device comprises an ion source ionization chamber. The auxiliary mode of the lamp filament and the external magnetic field is adopted, the working gas can be more fully ionized to form plasmas, the plasma conversion efficiency of the gas is higher, the plasmas are more gathered in the center of the cavity, the density is higher, and the problems that under the low radio frequency power, the working gas is not prone to being ionized, and the working efficiency is poor are effectively solved. The problem that plasma cannot be formed through excitation is solved, normal operation of a system under low power is achieved, and the influence on a power supply and other equipment under high power is reduced. Meanwhile, the external magnetic field reduces the deposition probability of stray ions on the inner wall of the chamber, so that the ion source ionization chamber is not easy to pollute, and the cooling flow channel additionally arranged on the outer side of the ion source ionization chamber can timely take away heat deposited on the wall of the chamber, thereby greatly prolonging the service life of the ion source ionization chamber.

A cold cathode Penning ion source with a variable suction electrode structure comprises a shell, a variable suction electrode, a cathode, an anode discharge cavity, a permanent magnet, an insulating material and a plurality of gas delivery pipes, the insulating material is lined in the shell, the anode discharge cavity and the cathode are both arranged in the shell, the permanent magnet is arranged in the shell and arranged around the anode discharge cavity as the center, and the gas delivery pipes are arranged in the shell. The gas delivery pipes are arranged at the tail end of the anode discharge cavity, the variable suction electrode is arranged at the head end of the anode discharge cavity and comprises a base, a plurality of variable suction electrode blades and a driving device, the variable suction electrode blades are arranged along the circumference of the base, the top ends of the variable suction electrode blades point to the axis direction of an ion beam in the anode discharge cavity, and the driving device is arranged on the base. And the driving device enables the variable suction electrode blades to rotate and adjust relative to the base so as to change the opening and closing angles of the variable suction electrode blades. According to the invention, beam adjusting equipment and an independent gas distribution device do not need to be additionally arranged, and the adaptability, flexibility and beam quality of the ion source are improved.

This invention discloses a carbon nanotube cathode ion source device and a neutron tube. The carbon nanotube cathode assembly is disposed at one end of a support pillar, with several protrusions at the end of the assembly furthest from the pillar. A first insulator is fitted onto the outside of the carbon nanotube cathode assembly, and a grid cylinder is fitted onto the outside of the first insulator. Through holes corresponding to the protrusions are formed on the end face of the grid cylinder near the carbon nanotube cathode assembly. A second insulator is fitted onto the outside of the grid cylinder, and a fixing assembly is fitted onto the outside of the support pillar. One end of the fixing assembly abuts against one end of the cathode, the first insulator, the grid cylinder, and the second insulator. An anode cylinder is fitted onto the outside of the second insulator and the fixing assembly. This invention provides a compact ion source structure and improves the degassing temperature, achieving a larger ion current output. It overcomes the disadvantages of complex structures and low degassing temperatures associated with magnetic material components, while also improving the output ion current and enhancing the stability of the ion source operation.