1666results about "Ion beam tubes" patented technology

A low-power atmospheric pressure plasma source, comprising a plasma-forming region for injection of a plasma-forming gas; an excitation region for injection of a source reactive species downstream of the plasma-forming region; and a narrow converging plasma exit for producing a narrow plasma jet, the source being electrically decoupled from a substrate under treatment by the plasma jet. The present source may found applications for example for skin treatment, etching of skin cancer cells, detachment of cells, removal of skin pigmentation and deposition of temporary organic films.

A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the sidewall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.

An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized boron hydride molecular clusters are implanted to form P-type transistor structures. For example, in the fabrication of Complementary Metal-Oxide Semiconductor (CMOS) devices, the clusters are implanted to provide P-type doping for Source and Drain structures and for Polygates; these doping steps are critical to the formation of PMOS transistors. The molecular cluster ions have the chemical form B_nH_x⁺ and B_nH_x⁻ where 10

The invention relates to methods and instruments for ionizing analyte molecules, preferably biomolecules, which are dissolved in liquids or firmly adsorbed on surfaces. Liquids are nebulized at atmospheric pressure by electrospraying. Highly charged microdroplets, which enter the vacuum of the mass spectrometer through the inlet capillary, strike an impact plate when energy is fed in. The repulsive Coulomb force of the charges, the absorption of additional thermal energy and/or the conversion of their kinetic energy into thermal energy cause the microdroplets to burst and evaporate. Analyte molecules which are located in the nebulized liquid or on the impact plate are released in charged form and can be fed to the mass spectrometer for analysis by the extraction and collection effect of an ion funnel operated with RF and DC voltages.

Charged droplet spray is formed from a solution with all or a portion of the charged droplet spray current generated from reduction or oxidation (redox) reactions occurring on surfaces removed from the first or sample solution flow path. In one embodiment of the invention, two solution flow channels are separated by a semipermeable membrane. A first or sample solution flowing through the first solution flow channel exchanges cation or anion charged species through the semipermeable membrane with a second solution or gas flowing through the second flow channel. Charge exchange is driven by the electric field applied at the charged droplet sprayer sample solution outlet. Redox reactions occur at an electrode surface in contact with the second solution. The invention increases the control and range of the Electrospray ionization process during ES/MS operation. Alternative embodiments of the invention provide for conducting redox reactions on conductive surfaces removed from the first or sample solution flow path but not separated by semipermeable membranes.

It is arranged so that ions can be analyzed accurately and with high sensitivity. A first electrode 11 is provided on the outer periphery of a dielectric cylindrical body 13 and a second electrode 12 is placed inside the cylindrical body 13 leaving a clearance between itself and the inner surface of the cylindrical body 13. When an AC high voltage is impressed across the first electrode 11 and second electrode 12, a barrier discharge occurs within the cylindrical body 13. When a distal end portion 12a of the second electrode 12 projects outwardly from the distal end of the cylindrical body 13, a thermal equilibrium plasma P having a low electron temperature is generated outwardly of the distal end of the cylindrical body 13 without a plasma jet ascribable to the barrier discharge emerging outwardly from the distal end of the cylindrical body 13. By exposing a sample S to the thermal equilibrium plasma P, particles (atoms, molecules) desorbed from the sample S undergo soft ionization without being decomposed or polymerized. The ions generated are introduced to a mass analyzer 50.

Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition. The service lifetime of the system is enhanced by provisions for in-situ etch cleaning of the ion source and extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings, including accurate vapor flow control and accurate focusing of the ion beam optics. A remote plasma source delivers F or Cl ions to the de-energized ion source for the purpose of cleaning deposits in the ion source and the extraction electrode. These techniques enable long equipment uptime when running condensable feed gases such as sublimated vapors, and are particularly applicable for use with so-called cold ion sources and universal ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecaborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.

In one aspect the invention provides a gas field ion source assembly that includes an ion source in connection with an optical column such that an ion beam generated at the ion source travels through the optical column. The ion source includes an emitter having a width that tapers to a tip comprising a few atoms. In other aspects, the methods provide for manufacturing, maintaining and enhancing the performance of a gas field ion source including sharpening the tip of the ion source in situ.

An ion implantation device for vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system and delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source. The ion implantation device includes an ion source which can operate without an arc plasma, which can improve the emittance properties and the purity of the beam and without a strong applied magnetic field, which can improve the emittance properties of the beam. The ion source is configured so that it can be retrofit into the ion source design space of an existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs.

Ion source and method of making and sharpening. The ion source is a single crystal metal conductor having a substantially conical tip portion with substantial rotational symmetry. The tip portion terminates with a tip radius of curvature in the range of 50-100 nanometers. The ion source is made by electrochemical etching so that a conical tip of a selected geometry is formed. The ion source is then sharpened to provide a source of ions from a volume near the size of a single atom. Further, this ion source makes possible a stable and practical light ion microscope which will have higher resolution than existing scanning electron microscopes and scanning metal-ion microscopes.