45 results about "Decaborane" patented technology

A method for depositing a metal film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a decaborane precursor onto the substrate. A reaction between the metal halide precursor and the decaborane precursor forms a metal film, specifically a metal boride.

Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition. The service lifetime of the system is enhanced by provisions for in-situ etch cleaning of the ion source and extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings, including accurate vapor flow control and accurate focusing of the ion beam optics. A remote plasma source delivers F or Cl ions to the de-energized ion source for the purpose of cleaning deposits in the ion source and the extraction electrode. These techniques enable long equipment uptime when running condensable feed gases such as sublimated vapors, and are particularly applicable for use with so-called cold ion sources and universal ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecaborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.

An ion implantation device for vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system and delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source. The ion implantation device includes an ion source which can operate without an arc plasma, which can improve the emittance properties and the purity of the beam and without a strong applied magnetic field, which can improve the emittance properties of the beam. The ion source is configured so that it can be retrofit into the ion source design space of an existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs.

The service lifetime of an ion source is enhanced or prolonged by the source having provisions for in-situ etch cleaning of the ion source and of an extraction electrode, using reactive halogen gases (F or Cl), and by having features that extend the service duration between cleanings. The latter include accurate vapor flow control, accurate focusing of the ion beam optics, and thermal control of the extraction electrode that prevents formation of deposits or prevents electrode destruction. An apparatus comprised of an ion source for generating dopant ions for semiconductor wafer processing is coupled to a remote plasma source which delivers F or Cl ions to the first ion source for the purpose of cleaning deposits in the first ion source and the extraction electrode. These methods and apparatus enable long equipment uptime when running condensable feed gases such as sublimated vapor sources, and are particularly applicable for use with so-called cold ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecarborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.

An ion source for ion implantation system and a method of ion implantation employs a controlled broad, directional electron beam to ionize process gas or vapor, such as decaborane, within an ionization volume by primary electron impact, in CMOS manufacturing and the like. Isolation of the electron gun for producing the energetic electron beam and of the beam dump to which the energetic beam is directed, as well as use of the thermally conductive members for cooling the ionization chamber and the vaporizer, enable use with large molecular species such as decaborane, and other materials which are unstable with temperature. Electron optics systems, facilitate focusing of electrons from an emitting surface to effectively ionize a desired volume of the gas or vapor that is located adjacent the extraction aperture. The components enable retrofit into ion implanters that have used other types of ion sources. Demountable vaporizers, and numerous other important features, realize economies in construction and operation. Achievement of production-worthy operation in respect of very shallow implants is realized.

An ion source (50) for an ion implanter is provided, comprising a remotely located vaporizer (51) and an ionizer (53) connected to the vaporizer by a feed tube (62). The vaporizer comprises a sublimator (52) for receiving a solid source material such as decaborane and sublimating (vaporizing) the decaborane. A heating mechanism is provided for heating the sublimator, and the feed tube connecting the sublimator to the ionizer, to maintain a suitable temperature for the vaporized decaborane. The ionizer (53) comprises a body (96) having an inlet (119) for receiving the vaporized decaborane; an ionization chamber (108) in which the vaporized decaborane may be ionized by an energy-emitting element (110) to create a plasma; and an exit aperture (126) for extracting an ion beam comprised of the plasma. A cooling mechanism (100, 104) is provided for lowering the temperature of walls (128) of the ionization chamber (108) (e.g., to below 350° C.) during ionization of the vaporized decaborane to prevent dissociation of vaporized decaborane molecules into atomic boron ions. In addition, the energy-emitting element is operated at a sufficiently low power level to minimize plasma density within the ionization chamber (108) to prevent additional dissociation of the vaporized decaborane molecules by the plasma itself.

The invention discloses a method for manufacturing boron nitride toughened polycrystalline diamond. The method includes dissolving boron compounds (B<5>H<9> or B<6>H<10> or B<9>H<15> or B<10>H<14> or carbon decaborane) in solvents; adding a calculated amount of diamond micro-powder into the solvents, uniformly stirring the diamond micro-powder and removing the solvents; filling zirconium cups with the coated diamond micro-powder, compacting the diamond micro-powder in the zirconium cups, placing the diamond micro-powder and carbon tungsten alloy sheets into molybdenum cups, compacting the diamond micro-powder and the carbon tungsten alloy sheets in the molybdenum cups, and weighting the calculated amount of coated diamond micro-powder, filling the coated diamond micro-powder in the zirconium cups, paving, compacting, covering the coated diamond micro-powder with the carbon tungsten alloy sheets, placing all in the molybdenum cups, and secondarily compacting through a mold to form a pre-compaction block; filling the pre-compaction block, table salt tubes, insulating tubes, graphite tube heating elements, conductive tablets, end caps and the like into a powder compression block to form complete assembly; placing the assemblies in a six-surface diamond presser, and performing isostatic pressing sintering on the assemblies at the temperature of 1480-1550 DEG C under the pressure of 5-5.5GPa to obtain polycrystalline diamond composite sheets. Two types of micro-powder with two different grain sizes are mixed to form the diamond micro-powder, the grain size of the coarse powder is 8-14 micrometers, the grain size of the fine powder is 0.5-2.5 micrometers, and a proportion of the coarse powder to the fine powder is 3/1-5/1. The method has the advantage that the diamond crystalline composite sheets manufactured by the aid of the method are high in heat resistance and abrasion resistance.

The invention belongs to the technical field of oil exploitation, and relates to a hydrogenation heat gas chemical yield increasing solution component capable of increasing permeability of a shallow well and a near wellbore region. The solution component comprises first solution and second solution, the mass ratio of the first solution to the second solution is 1:1, the first solution comprises 37-43% of ammonium nitrate NH4NO3, 23-26% of urea CO(NH2)2, 5-8% of decaborane B10H14, 1-2% of glucose C6H12O6, 0.5-1.5% of methenamine (CH2)6N4 and 19.5-33.5% of water. The second solution comprises 44-48% of sodium nitrate NaNO3, 15-20% of sodium nitrite NaNO2, 17-21% of sodium aluminum hydride NaAlH4 and 15-19% of tetrachloroethylene C2Cl4. By the aid of the solution component, porosity of an ore bed can be increased, accordingly, permeability is increased, and the yield can be increased by 2-10 times.

The invention discloses a carborane and a synthesis method thereof. In the method, propiolic halide is adopted as a raw material to synthesize propargyl ether containing unsaturated carbon-carbon double bond through nucleophile substitution reaction, and the alkynyl in the propargyl ether is adducted with decaborane to obtain reactive carborane in which a carbon-carbon double bond is bonded on a cage type carborane structure through an ether bond. The synthesized reactive carborane, which is liquid at normal temperature, can have an effect of a plasticizer while being used as a composite solid burning-rate catalyst of a propellant. The unsaturated group carbon-carbon double bond, which has disconjugacy and strong reactivity, contained in the carborane is expected to overcome migration through taking part in the crosslinking curing reaction with the composite solid propellant. The carborane containing unsaturated carbon-carbon double bond has low synthesis cost and simple and convenient production technique, and is beneficial for industrial production.

The present invention provides a method for fabricating a semiconductor device with ultra-shallow super-steep-retrograde epi-channel that is able to overcome limitedly useable energies and to enhance manufacturing productivity than using ultra low energy ion implantation technique that has disadvantage of difficulties to get the enough ion beam current as well as that of prolonged processing time. The inventive method includes the steps of: a method for fabricating a semiconductor device with ultra shallow super-steep-retrograde (hereinafter referred as to SSR) epi-channel, comprising the steps of: forming a channel doping layer below a surface of a semiconductor substrate by implanting decaborane; forming an epi-layer on the channel doping layer; forming sequentially a gate dielectric layer and a gate electrode on the epi-layer; forming source/drain extension areas shallower than the channel doping layer by being aligned at edges of the gate electrode; forming a spacers on lateral sides of the gate electrode; and forming source/drain areas deeper than the channel doping layer by being aligned at edges of the spacer through ion implantation onto the substrate.

A preparation method of a boron carbide precursor with high boron content comprises the steps of: (1) adding a solvent in a reactor, then adding decaborane and diene organic compound, and vacuumizing and drying the reactor; (2) adding a catalyst to the reactor; (3) heating, stirring continuously for reaction under nitrogen atmosphere protection, evaporating the reaction products to remove the solvent, to obtain a viscous liquid; (4) rinsing with n-hexane or petroleum ether and removing residual catalyst and solvent in the obtained viscous liquid, to obtain a monomer; (5) placing the monomer in the reactor, and adding a solvent and a catalyst; (6) repeatedly vacuumizing the reactor; (7) heating and continuously stirring for reaction under a nitrogen atmosphere protection; and (8) removing the solvent in the reaction products. The boron carbide precursor prepared by the invention has high ceramic yield and high boron content, and is applicable to the preparation of boron carbide capsule for nuclear fusion, as well as the preparation of high performance carbide matrix composite.

The invention discloses a SiBCN ceramic precursor and a synthesis method thereof.According to the synthesis method of the SiBCN ceramic precursor, decaborane and an organosilicon compound serve as raw materials, the dehydrogenation condensation reaction of the decaborane and the organosilicon compound is utilized, the new SiBCN ceramic precursor is simply and efficiently synthesized, the reaction can be conducted at the room temperature, and the synthesis yield reaches 82 wt% or above. The method has the advantages of no by-product except hydrogen, high atom utilization rate, convenience in large-scale production, good solubility of the synthesized Si-C-N-B multi-element ceramic precursor, high ceramic yield and suitability for various solution processing technologies to prepare ceramic materials with complex shapes.

The invention discloses a high-temperature-resistant polymer containing m-carborane group and a preparation method of the high-temperature-resistant polymer. The high-temperature-resistant polymer is poly[bis(4-chlorphenyl)-m-carborane] or poly[bis(3-chlorphenyl)-m-carborane], the thermal stability is good, the oxidation resistance is good, the ceramic yield is high, and the polymer can be applied to the fields of boron carbide ceramic precursors, anti-oxidation coatings, neutron shielding materials, photoluminescent materials and the like. The preparation method comprises the steps of monomer synthesis, monomer polymerization and the like, m-carborane which is stable in property and low in toxicity is used as a boron source substance to replace unstable and highly toxic decaborane adopted in the prior art, the process is simple and safe, the synthesis difficulty of the polymer is low, and the preparation method is suitable for mass production.

The invention discloses preparation of carborane celecoxib and application of carborane celecoxib in head and neck cancer boron neutron capture therapy drugs, and relates to the field of medicinal chemistry and radiological medicine. The compound can be prepared from celecoxib, 3-propargyl bromide and decaborane in a toluene solution through substitution and addition reactions step by step. The preparation process is simple and easy to operate, and the product is high in yield and purity. Head and neck cancer cell experiment results prove that the compound has high selectivity on head and neckcancer cells and has an obvious apoptosis induction effect on the head and neck cancer cells in boron neutron capture therapy. Compared with an existing clinical medicine applied to boron neutron capture therapy, the compound is high in boron loading capacity and high in tumor selectivity, the anti-inflammatory effect can be achieved while the radiotherapy effect is achieved, and the toxic and side effects of therapy are reduced.

The invention provides a preparation method of superfine-diameter SiBCN ceramic fibers. The preparation method comprises the following steps: preparing a decaborane solution, a diamine solution and a polyvinyl pyrrolidone solution; dropwise adding the diamine solution into the decaborane solution, reacting for more than 10 hours at room temperature, and then carrying out vacuum distillation for 8-12 hours under the 55-65 DEG C constant-temperature water bath condition to obtain silicon-containing polyborazine; adding a polyvinyl pyrrolidone solution into the silicon-containing polyborazine, and carrying out ultrasonic treatment to obtain a transparent spinning solution; performing electrostatic spinning treatment on the spinning solution to obtain superfine fibers; and placing the superfine fibers in a sintering furnace, heating to 1400-1600 DEG C from room temperature at a heating rate of 1-5 DEG C/min in an inert atmosphere, and cooling to 100 DEG C or below along with the furnace to obtain the superfine-diameter SiBCN ceramic fibers. The synthesis method is simple and easy to implement, and is suitable for the application field of preparing flexible, high-temperature-resistant and heat-insulating multifunctional materials.

The invention provides a preparation method of superfine-diameter BCN and BN ceramic fibers. The preparation method comprises the following steps: reacting the same amount of decaborane and nitrogen source molecules in tetrahydrofuran at room temperature for 10-14 hours, and then distilling at 90-110 DEG C for 5-8 hours to remove a solvent to obtain a BCN ceramic precursor; dissolving the BCN ceramic precursor and polystyrene in N,N-dimethylformamide or a mixed solution of N,N-dimethylformamide and tetrahydrofuran to prepare a spinning solution; carrying out solution spinning treatment on the spinning solution to obtain superfine fiber felt; and placing the superfine fiber felt in a vacuum sintering furnace, introducing protective gas, raising the temperature to 1200-1400 DEG C at the speed of 60-100 DEG C per minute, keeping the temperature for 2 h, and cooling to the room temperature, wherein when the introduced gas is nitrogen, BCN ceramic fibers with the superfine diameter is obtained; and when the introduced gas is the mixed gas of nitrogen and ammonia gas, superfine-diameter BN ceramic fibers are obtained.

The invention provides a synthetic method for a boron-containing precursor copolymer. The synthetic method adopts a decaborane and a dienes organic compound as raw materials for reaction. A boron carbide precursor prepared by the synthetic method has high ceramic yield and boron content and favorable solubility, and can be used for preparing boron carbide pellets for nuclear fusion and other boron carbide ceramic materials.

The invention discloses a carborane viologen derivative, a metal supramolecular polymer, a synthesis method and application. Viologen is used as a central core structure, 1,2-bis(4-pyridyl)acetylene is synthesized through a Sonagashira coupling reaction, and then alkynyl is attacked by decaborane to synthesize a carborane viologen precursor A; or alkynyl in bis(4-bromophenyl)acetylene is attackedwith decaborane to synthesize bis(4-bromophenyl)carborane, then a carborane viologen precursor B is synthesized through a Still coupling reaction, and finally the carborane viologen derivative is further obtained through the carborane viologen precursor A or the carborane viologen precursor B. Then, viologen is used as a central core structure, the carborane viologen derivative, ruthenium trichloride, cobalt dichloride or ferrous acetate are used as reaction raw materials, acetic acid is used as a solvent for reflux reaction, and finally, a product in reaction liquid is separated and dried tosynthesize the carborane viologen metal supramolecular polymer.