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287 results about "Metal boride" patented technology

Deposition of metal borides

A method for depositing a metal boride film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a boron compound precursor onto the substrate. A reaction between the metal halide precursor and the boron compound precursor forms a metal boride film. Specifically, the method discloses forming a tantalum boride (TaB2) or a niobium boride (NbB2) film.
Owner:ASM IP HLDG BV

Deposition of metal borides

A method for depositing a metal boride film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a boron compound precursor onto the substrate. A reaction between the metal halide precursor and the boron compound precursor forms a metal boride film. Specifically, the method discloses forming a tantalum boride (TaB2) or a niobium boride (NbB2) film.
Owner:ASM IP HLDG BV

Deposition of metal borides and silicides

A method for depositing a metal film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a reducing precursor onto the substrate. A reaction between the metal halide precursor and the reducing precursor forms a metal film. Specifically, the method discloses forming a metal boride or a metal silicide film.
Owner:ASM IP HLDG BV

Deposition of metal borides

A method for depositing a metal film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a decaborane precursor onto the substrate. A reaction between the metal halide precursor and the decaborane precursor forms a metal film, specifically a metal boride.
Owner:ASM IP HLDG BV

Semiconductor integrated circuit device and manufacturing method thereof

A manufacturing process for a semiconductor integrated circuit device which prevents occurrence of reaction between metal wiring and a boron-doped silicon plug over it in heat treatment for a MOS transistor to be formed over them and reduces the possibility of rise in contact resistance. Metal boride is formed on an exposed metal surface in the bottom of an opening made in an interlayer insulating film over the metal wiring. In order to facilitate formation of such metal boride, metal oxide remaining on the metal surface is removed with an aqueous ammonia solution. The meal surface is irradiated with high energy ultraviolet light in order to remove organic matter remaining in the opening and facilitate removal of the metal oxide with the aqueous ammonia solution.
Owner:RENESAS ELECTRONICS CORP

Systems and Methods of the Formation of Solid State Metal Boride and Oxide Coatings

A system and method for the formation of novel small particles, thin films, and coatings of solid state metal boride material. The metal boride materials may be formed using aerosol methods and / or spray pyrolysis to form a generally uniform, thin film coating of boride compound spheres. Boride solutions or compounds are sprayed via a gas nebulizer in a reactor containing a substrate and heated to approximately 900° Celsius. The boride compounds form uniform, spherical particles of approximately one micrometer in diameter. The boride compounds are extremely strong, non-reactive, dense, and, when prepared as films or coating, adhere very well to substrates, such as metals.
Owner:SYRACUSE UNIVERSITY

Metal gate MOS transistors and methods for making the same

Semiconductor devices and fabrication methods are provided, in which metal transistor gates are provided for MOS transistors. Metal boride is formed above a gate dielectric to create PMOS gate structures and metal nitride is formed over a gate dielectric to provide NMOS gate structures. The metal portions of the gate structures are formed from an initial starting material that is either a metal boride or a metal nitride, after which the starting material is provided with boron or nitrogen in one of the PMOS and NMOS regions through implantation, diffusion, or other techniques, either before or after formation of the conductive upper material, and before or after gate patterning. The change in the boron or nitrogen content of the starting material provides adjustment of the material work function, thereby tuning the threshold voltage of the resulting PMOS or NMOS transistors.
Owner:TEXAS INSTR INC

Metal amides of cyclic amines

Compounds, and oligomers of the compounds, are synthesized with cyclic amine ligands attached to a metal atom. These compounds are useful for the synthesis of materials containing metals. Examples include pure metals, metal alloys, metal oxides, metal nitrides, metal phosphides, metal sulfides, metal selenides, metal tellurides, metal borides, metal carbides, metal silicides and metal germanides. Techniques for materials synthesis include vapor deposition (chemical vapor deposition and atomic layer deposition), liquid solution methods (sol-gel and precipitation) and solid-state pyrolysis. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices. The films have very uniform thickness and high step coverage in narrow holes.
Owner:PRESIDENT & FELLOWS OF HARVARD COLLEGE

Metal gate MOS transistors and methods for making the same

Semiconductor devices and fabrication methods are provided, in which metal transistor gates are provided for MOS transistors. Metal boride is formed above a gate dielectric to create PMOS gate structures and metal nitride is formed over a gate dielectric to provide NMOS gate structures. The metal portions of the gate structures are formed from an initial starting material that is either a metal boride or a metal nitride, after which the starting material is provided with boron or nitrogen in one of the PMOS and NMOS regions through implantation, diffusion, or other techniques, either before or after formation of the conductive upper material, and before or after gate patterning. The change in the boron or nitrogen content of the starting material provides adjustment of the material work function, thereby tuning the threshold voltage of the resulting PMOS or NMOS transistors.
Owner:TEXAS INSTR INC

Anti-abrasion metal-ceramic composite product and preparation method thereof

The invention provides an anti-abrasion metal-ceramic composite product and a preparation method thereof. The structural performance of the product is improved through at least one type of metallic oxides, metal nitrides or metal borides and intermetallic compounds. Metal-ceramic particle prefabricated parts made of ceramic particles and metal powder, or metal-ceramic particle prefabricated parts made of metal powder and mixtures which are obtained through uniform mixing of ceramic particles and metal powder with auxiliaries are subjected to high-temperature sintering thermal treatment to obtain the product. According to the anti-abrasion metal-ceramic composite product and the preparation method thereof, abrasion resistance of ceramic particles and mechanical performances of metal materials are perfectly combined, so that the hardness and the abrasion resistance of traditional metal materials are greatly improved. Compared with traditional anti-abrasion parts, the service life of metal grinding balls is increased by 1 time to 1.9 times, and the service life of liner plates and hammers is increased by more than 2.5 times, accordingly, a large number of metal materials are saved, and the production efficiency is improved.
Owner:湖北秦鸿新材料有限公司

Method of consolidating ultrafine metal carbide and metal boride particles and products made therefrom

Ultrafine metal carbide or metal boride particles are consolidated by a method including sintering at intermediate pressures. A green body comprising the ultrafine metal carbide or metal boride particles may be preheated under vacuum and then pressurized to the intermediate sintering pressure. After sintering, the article may be densified at an intermediate temperature below the sintering temperature, and at an elevated pressure above the intermediate sintering temperature. The resultant consolidated metal carbide or metal boride article may then be cooled and used for such applications as armor panels, abrasion resistant nozzles, and the like.
Owner:PPG IND OHIO INC

Separator for fuel cell, method for preparing the same, and fuel cell stack comprising the same

InactiveUS20060134501A1Improve anti-corrosion performanceExcellent electro-conductivity characteristicFuel cells groupingFinal product manufactureFuel cellsCarbide
The metal separator for a fuel cell of the present invention includes a metal substrate having reactant flow pathways and an electro-conductive anti-corrosion coating layer. The electro-conductive anti-corrosion coating layer covers the surface of the metal substrate on which the reactant flow pathways are formed. The coating layer may include metal carbides, metal oxides, and metal borides. A metal layer for improving adherence is formed between the surface of the metal substrate on which the reactant flow pathways are formed, and the electro-conductive anti-corrosion coating layer.
Owner:SAMSUNG SDI CO LTD

Composite material having improved microstructure and method for its fabrication

A composite material which may be used as an electrode for a battery or other electrochemical device, or as a catalyst, has a matrix which is one or more metal carbide, metal nitride, metal boride, metal silicide or intermetallic compound. A metallic component is dispersed in the matrix. The metallic component comprises a metal and an agent which increases the melting point of the metal. The metallic component may be nanodispersed in the matrix. A specific material comprises a nanodispersion of tin, alloyed with an element which increases its melting point to at least 600° C., disposed in a matrix of a transition metal carbide or nitride. This material has very good utility as an anode material for lithium batteries. Also disclosed are other compositions as well as methods for manufacturing the compositions.
Owner:A123 SYSTEMS LLC

Method for depositing boron-rich coatings

A method is disclosed for coating substantially pure boron or highly boron-rich borides in a controlled manner. Such a method of coating of boron has a variety of applications, including surface chemical and wear protection, neutron absorption, prevention of impurity emission from heated filaments and ion beams, elimination of metal dust from vacuum systems, boridizing, boron cluster emission, and reactive chemistry. Borides with a boron-to-metal ratio of 20 or more are known to exist and may be used as a feedstock for substantially pure boron coatings for deposition processes requiring feedstock electrical conductivity, and / or enhanced reactivity. While most metal borides coincidentally produce significant metal vapor as a by-product, certain borides of yttrium, holmium, erbium, thulium, terbium, gadolinium, and lutetium have been identified as capable of producing substantially pure boron vapor.
Owner:IBADEX

Tungsten-doped boride-coated lithium battery anode material and preparation method thereof

The invention is applicable to the technical field of lithium batteries and provides a tungsten-doped boride-coated lithium battery anode material and a preparation method thereof. Firstly, tungsten source is dissolved in water, sprayed onto a mixed material of a ternary precursor and lithium source and then stirred to obtain a dried material; the dried material is placed and baked in a saggar toobtain a tungsten-doped ternary anode material; finally, metal boride is added to the tungsten-doped ternary anode material, stirred uniformly and sintered at a certain temperature to obtain the tungsten-doped boride-coated lithium battery anode material. According to the tungsten-doped boride-coated lithium battery anode material, the synergistic effect between tungsten doping and the metal boride takes full advantage of the tungsten doping and the metal boride, the tungsten doping can significantly inhibit grain growth and shorten the transmission distance of Li+, MgB2 as a superconductor has fast ion transmission properties, and the tungsten doping and the metal boride improve rate capability of the tungsten-doped boride-coated lithium battery anode material. Meanwhile, the boride coating can inhibit the reaction between the surface of an electrode material and electrolyte, thereby improving the safety performance and cycle stability of the tungsten-doped boride-coated lithium battery anode material.
Owner:GEM (HUBEI) NEW ENERGY MATERIALS CO LTD

Method and apparatus for production of a compound having submicron particle size and a compound produced by the method

The invention relates to an improved method of manufacturing a compound having a sub-micron primary particle size such as a metal compound such as metal oxides, metaloxy hydroxides metal hydroxides, metal carbides, metal nitrides, metal carbonitrides, metal borides, electroceramics and other such compound, said method comprising the steps of: introducing a solid reactor filling material in a reactor, introducing a metal-containing precursor, a semi-metal-containing precursor, a metal-containing oxide or a semi-metal-containing oxide in said reactor, introducing a reactant or a substitution source into the said reactor, and introducing a supercritical solvent into the said reactor. These steps result in the formation of said compound in the proximity of the said solid reactor filling material.
Owner:AALBORG UNIV

Sintering preparation method of boron carbide ceramic

The invention discloses a sintering preparation method of boron carbide ceramic, which comprises the following steps: 1. sintering: carrying out mixing and ball milling on boron carbide powder, carbon powder, metal powder, a dispersant, an adhesive and deionized water to make a slurry, carrying out spray granulation, pressing into a biscuit, presintering for debonding, and carrying out thermal-insulation sintering at lower sintering temperature (slightly higher than the melting point of metal), thereby implementing primary shrinkage sintering of the product by utilizing the surface tension of the molten metal in the system; and 2. sintering: continuing enhancing the sintering temperature, carrying out in-situ reaction to generate metal carbide, metal boride or metal boro-carbide and nano B4C which have higher sintering activity, and forming a solid solution with boron carbide granules by using the metal carbide, metal boride or metal boro-carbide and nano B4C as sintering assistants to promote the further shrinkage sintering of the system, thereby obtaining the high-performance boron carbide ceramic. The method has the advantages of both the normal-pressure sintering technique and the reactive sintering technique.
Owner:NINGBO VULCAN TECH CO LTD

Vitreous bond compositions for abrasive articles

Bonded abrasive articles are described wherein a metal boride modified, lead-free vitreous matrix binds abrasive grains, such abrasive articles demonstrate improved performance over vitreous bonded abrasive articles with known vitreous matrices. Vitreous bond precursor materials are described including admixtures comprising lead-free vitreous precursor material and powder of metal boride(s), and admixtures comprising metal boride modified, lead-free vitreous particles. Methods are described for producing vitreous bonded abrasive articles having abrasive grains bound by metal boride modified, lead-free vitreous matrices.
Owner:VALENITE U S A INC +2

Solar intermediate-temperate high-temperature selective absorbing coating with absorbing layers composed of boron-containing compounds and preparation method of solar intermediate-temperate high-temperature selective absorbing coating

The invention discloses a solar intermediate-temperate high-temperature selective absorbing coating. The coating sequentially comprises an infrared high-reflection layer, a first absorbing layer, a second absorbing layer and an antireflection layer on the surface of a substrate from bottom to top, the first absorbing layer and the second absorbing layer are composed of gradient compositions of boron-containing compounds prepared by physical vapor deposition, and the boron-containing compounds are metal boride, metal nitrogen boride, metal oxygen boride or metal nitrogen oxygen boride. The coating is high in absorption rate and low in emissivity, has good intermediate-temperate and high-temperature inoxidizability and can be used at the high temperature in a non-vacuum condition for a long time. During preparation, radio frequency sputtering is avoided, the substrate is not heated, large-scale industrial production can be realized extremely easily, and the solar intermediate-temperate high-temperature selective absorbing coating has the advantages of energy conservation, easiness in control, low preparation cost, quick film formation and the like.
Owner:GUANGZHOU INST OF ENERGY CONVERSION - CHINESE ACAD OF SCI

Hexagonal boron nitride two-dimensional ultrathin nanometer sheet as well as preparation method and application thereof

The invention discloses a hexagonal boron nitride two-dimensional ultrathin nanometer sheet as well as a preparation method and application thereof and belongs to the technical field of nanometer materials. According to the invention, metal boride (such as calcium boride, lanthanum boride, magnesium boride, titanium boride and the like) is adopted as a boron resource; ammonium salt (such as ammonium chloride, ammonium bromide, ammonium nitrate and the like) is adopted as a nitrogen source; and the hexagonal boron nitride two-dimensional ultrathin nanometer sheet with the thickness of 0.5-4.0nm is obtained through the reaction under a mild condition (at the temperature of 500-600 DEG C). The invention aims to realize the macro-quantity preparation of the hexagonal boron nitride two-dimensional ultrathin nanometer sheet at the mild temperature by adopting cheaper raw materials; the preparation method has the advantages of saving the energy, simplifying the experimental step and greatly reducing the product cost; and due to the high heat conductivity, heat stability and chemical stability, the hexagonal boron nitride two-dimensional ultrathin nanometer sheet can be applied to the fields of heat dissipation materials, polymer filling materials, catalyst carriers and the like.
Owner:SOUTH CHINA AGRI UNIV

Nanocrystal particle, process for synthesizing the same, and device comprising the same

A nanocrystal particle including: a semiconductor material; boron and optionally fluorine, wherein the particle has an organic ligand bound to a surface thereof, the boron is present as being doped in the particle or as a metal boride and the fluorine is present as being doped in the particle or as a metal fluoride.
Owner:SAMSUNG ELECTRONICS CO LTD

Anti-oxidation protection for parts made of carbon-containing composite material

The method comprises the steps of: impregnating the part with a liquid impregnation composition containing at least a phosphate type compound, at least via a fraction of the outside surface of the part; applying a coating composition on said fraction of the outside surface of the part, the coating composition comprising a colloidal suspension of at least one refractory oxide in water, at least one compound essentially of the borosilicate type in powder form and having healing properties, and at least one metallic boride in powder form; and applying heat treatment after applying the coating composition.
Owner:SAFRAN LANDING SYSTEMS

Ceramic composite materials containing carbon nanotube-infused fiber materials and methods for production thereof

In various embodiments, composite materials containing a ceramic matrix and a carbon nanotube-infused fiber material are described herein. Illustrative ceramic matrices include, for example, binary, ternary and quaternary metal or non-metal borides, oxides, nitrides and carbides. The ceramic matrix can also be a cement. The fiber materials can be continuous or chopped fibers and include, for example, glass fibers, carbon fibers, metal fibers, ceramic fibers, organic fibers, silicon carbide fibers, boron carbide fibers, silicon nitride fibers and aluminum oxide fibers. The composite materials can further include a passivation layer overcoating at least the carbon nanotube-infused fiber material and, optionally, the plurality of carbon nanotubes. The fiber material can be distributed uniformly, non-uniformly or in a gradient manner in the ceramic matrix. Non-uniform distributions may be used to form impart different mechanical, electrical or thermal properties to different regions of the ceramic matrix.
Owner:APPL NANOSTRUCTURED SOLUTIONS LLC

In-situ formation of reinforcement phases in ultra high temperature ceramic composites

A tough ultra-high temperature ceramic (UHTC) composite comprises grains of UHTC matrix material, such as HfB2, ZrB2 or other metal boride, carbide, nitride, etc., surrounded by a uniform distribution of acicular high aspect ratio reinforcement ceramic rods or whiskers, such as of SiC, is formed from uniformly mixing a powder of the UHTC material and a pre-ceramic polymer selected to form the desired reinforcement species, then thermally consolidating the mixture by hot pressing. The acicular reinforcement rods may make up from 5 to 30 vol % of the resulting microstructure.
Owner:NASA

ADDITIVES FOR GRAIN FRAGMENTATION IN Pb-FREE Sn-BASED SOLDER

InactiveUS20100200271A1Enhance electro-migrationEnhance thermomechanical fatigue reliabilityMaterial nanotechnologyNon-insulated conductorsMetallic materialsMaterials science
In one embodiment of the present invention, inert nano-sized particles having dimensions from 1 nm to 1,000 nm are added into a solder ball. The inert nano-sized particles may comprise metal oxides, metal nitrides, metal carbides, metal borides, etc. The inert nano-sized particles may be a single compound, or may be a metallic material having a coating of a different material. In another embodiment of the present invention, a small quantity of at least one elemental metal that forms stable high melting intermetallic compound with tin is added to a solder ball. The added at least one elemental metal forms precipitates of intermetallic compounds with tin, which are dispersed as fine particles in the solder.
Owner:IBM CORP

Positive electrode material for lithium sulphur battery and preparation method thereof, and lithium sulphur battery

A positive electrode material for a lithium sulphur battery and a preparation method thereof, and the lithium sulphur battery are disclosed. The positive electrode material comprises activated carbon,carbon black, transition metal or a transition metal compound, and sublimed sulfur; and the transition metal compound is metal carbide, metal boride, metal nitride, metal phosphide, metal oxide or metal sulfide. The activated carbon is utilized as a main body of sulfur carrying; the carbon black can carry sulfur and can also strengthen the conductivity of the positive electrode material; and thetransition metal or the transition metal compound can play a fixation role in lithium polysulfide produced in an electrochemical reaction, inhibits the shuttle effect of polysulfide ions, and enablesthe cycle performance of the lithium sulphur battery to be improved. The positive electrode material for the lithium sulphur battery disclosed by the invention has the advantages of being simple and easy to obtain, easy to be prepared on a large scale, and the like, and the lithium sulphur battery with long circulation, high specific capacity and high specific energy can be obtained.
Owner:ZHUHAI COSMX BATTERY CO LTD

Method and apparatus for delivery of molecules to cells

The present invention is concerned with a system and method for introducing a substance into cells. The system has an assembly including a plurality of elongate non-hollow nanoneedles forming a nanoneedle array or patch for delivering the substance into the cells, at least some of the nanoneedles have a non-uniform diameter with a wider upper end, a narrower lower end for penetration into the cells and a length from substantially 200 nm to 100 um. The lower end has a diameter from substantially 20-436 nm. Adjacent nanoneedles are spaced apart by substantially 5-50 um. The nanoneedles are made from a material selected from the group consisting of diamond, cubic boron nitride, carbon nitride, boron nitride, boron carbon nitride, metal borides and essentially boron materials, allowing the nanoneedles to maintain sufficient thinness and yet adequate rigidity during penetration. The nanoneedles are applied onto the cells grown on substrates at a preferred rate from 1 to 5 m / s. Alternatively, the nanoneedles are applied onto the cells grown on substrates by centrifugation force from 0.5 to 10 nN. Yet alternatively, the cells suspended in a fluid are applied to the nanoneedle array at a rate of 1 to 10 m / s.
Owner:CITY UNIVERSITY OF HONG KONG

Anti-oxidation protection of pieces made from a composite material containing carbon

The anti-oxidation protection of a composite material component, containing carbon and with open internal porosity, comprises : (A) impregnating the component by a liquid containing a phosphate compound, to the level of at least a part of the external surface; (B) applying, on this part of the external surface, a coating composition containing a colloidal suspension of a refractory oxide in water, a borosilicate compound in the form of a powder having cicatrizing properties and a powdered metal boride; (C) heat treating the coated component.
Owner:MESSIER BUGATTI INC
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