285 results about "Metal boride" patented technology

A method for depositing a metal film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a reducing precursor onto the substrate. A reaction between the metal halide precursor and the reducing precursor forms a metal film. Specifically, the method discloses forming a metal boride or a metal silicide film.

A method for depositing a metal film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a decaborane precursor onto the substrate. A reaction between the metal halide precursor and the decaborane precursor forms a metal film, specifically a metal boride.

A manufacturing process for a semiconductor integrated circuit device which prevents occurrence of reaction between metal wiring and a boron-doped silicon plug over it in heat treatment for a MOS transistor to be formed over them and reduces the possibility of rise in contact resistance. Metal boride is formed on an exposed metal surface in the bottom of an opening made in an interlayer insulating film over the metal wiring. In order to facilitate formation of such metal boride, metal oxide remaining on the metal surface is removed with an aqueous ammonia solution. The meal surface is irradiated with high energy ultraviolet light in order to remove organic matter remaining in the opening and facilitate removal of the metal oxide with the aqueous ammonia solution.

A system and method for the formation of novel small particles, thin films, and coatings of solid state metal boride material. The metal boride materials may be formed using aerosol methods and/or spray pyrolysis to form a generally uniform, thin film coating of boride compound spheres. Boride solutions or compounds are sprayed via a gas nebulizer in a reactor containing a substrate and heated to approximately 900° Celsius. The boride compounds form uniform, spherical particles of approximately one micrometer in diameter. The boride compounds are extremely strong, non-reactive, dense, and, when prepared as films or coating, adhere very well to substrates, such as metals.

Compounds, and oligomers of the compounds, are synthesized with cyclic amine ligands attached to a metal atom. These compounds are useful for the synthesis of materials containing metals. Examples include pure metals, metal alloys, metal oxides, metal nitrides, metal phosphides, metal sulfides, metal selenides, metal tellurides, metal borides, metal carbides, metal silicides and metal germanides. Techniques for materials synthesis include vapor deposition (chemical vapor deposition and atomic layer deposition), liquid solution methods (sol-gel and precipitation) and solid-state pyrolysis. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices. The films have very uniform thickness and high step coverage in narrow holes.

Semiconductor devices and fabrication methods are provided, in which metal transistor gates are provided for MOS transistors. Metal boride is formed above a gate dielectric to create PMOS gate structures and metal nitride is formed over a gate dielectric to provide NMOS gate structures. The metal portions of the gate structures are formed from an initial starting material that is either a metal boride or a metal nitride, after which the starting material is provided with boron or nitrogen in one of the PMOS and NMOS regions through implantation, diffusion, or other techniques, either before or after formation of the conductive upper material, and before or after gate patterning. The change in the boron or nitrogen content of the starting material provides adjustment of the material work function, thereby tuning the threshold voltage of the resulting PMOS or NMOS transistors.

A polymerizable composition contains (A) a polymerization initiator that is an acetophenone-based compound or an acylphosphine oxide-based compound, (B) a polymerizable compound, (C) at least either a tungsten compound or a metal boride, and (D) an alkali-soluble binder.

The metal separator for a fuel cell of the present invention includes a metal substrate having reactant flow pathways and an electro-conductive anti-corrosion coating layer. The electro-conductive anti-corrosion coating layer covers the surface of the metal substrate on which the reactant flow pathways are formed. The coating layer may include metal carbides, metal oxides, and metal borides. A metal layer for improving adherence is formed between the surface of the metal substrate on which the reactant flow pathways are formed, and the electro-conductive anti-corrosion coating layer.

A method is disclosed for coating substantially pure boron or highly boron-rich borides in a controlled manner. Such a method of coating of boron has a variety of applications, including surface chemical and wear protection, neutron absorption, prevention of impurity emission from heated filaments and ion beams, elimination of metal dust from vacuum systems, boridizing, boron cluster emission, and reactive chemistry. Borides with a boron-to-metal ratio of 20 or more are known to exist and may be used as a feedstock for substantially pure boron coatings for deposition processes requiring feedstock electrical conductivity, and/or enhanced reactivity. While most metal borides coincidentally produce significant metal vapor as a by-product, certain borides of yttrium, holmium, erbium, thulium, terbium, gadolinium, and lutetium have been identified as capable of producing substantially pure boron vapor.

The invention is applicable to the technical field of lithium batteries and provides a tungsten-doped boride-coated lithium battery anode material and a preparation method thereof. Firstly, tungsten source is dissolved in water, sprayed onto a mixed material of a ternary precursor and lithium source and then stirred to obtain a dried material; the dried material is placed and baked in a saggar toobtain a tungsten-doped ternary anode material; finally, metal boride is added to the tungsten-doped ternary anode material, stirred uniformly and sintered at a certain temperature to obtain the tungsten-doped boride-coated lithium battery anode material. According to the tungsten-doped boride-coated lithium battery anode material, the synergistic effect between tungsten doping and the metal boride takes full advantage of the tungsten doping and the metal boride, the tungsten doping can significantly inhibit grain growth and shorten the transmission distance of Li+, MgB2 as a superconductor has fast ion transmission properties, and the tungsten doping and the metal boride improve rate capability of the tungsten-doped boride-coated lithium battery anode material. Meanwhile, the boride coating can inhibit the reaction between the surface of an electrode material and electrolyte, thereby improving the safety performance and cycle stability of the tungsten-doped boride-coated lithium battery anode material.

The invention discloses a sintering preparation method of boron carbide ceramic, which comprises the following steps: 1. sintering: carrying out mixing and ball milling on boron carbide powder, carbon powder, metal powder, a dispersant, an adhesive and deionized water to make a slurry, carrying out spray granulation, pressing into a biscuit, presintering for debonding, and carrying out thermal-insulation sintering at lower sintering temperature (slightly higher than the melting point of metal), thereby implementing primary shrinkage sintering of the product by utilizing the surface tension of the molten metal in the system; and 2. sintering: continuing enhancing the sintering temperature, carrying out in-situ reaction to generate metal carbide, metal boride or metal boro-carbide and nano B4C which have higher sintering activity, and forming a solid solution with boron carbide granules by using the metal carbide, metal boride or metal boro-carbide and nano B4C as sintering assistants to promote the further shrinkage sintering of the system, thereby obtaining the high-performance boron carbide ceramic. The method has the advantages of both the normal-pressure sintering technique and the reactive sintering technique.

Bonded abrasive articles are described wherein a metal boride modified, lead-free vitreous matrix binds abrasive grains, such abrasive articles demonstrate improved performance over vitreous bonded abrasive articles with known vitreous matrices. Vitreous bond precursor materials are described including admixtures comprising lead-free vitreous precursor material and powder of metal boride(s), and admixtures comprising metal boride modified, lead-free vitreous particles. Methods are described for producing vitreous bonded abrasive articles having abrasive grains bound by metal boride modified, lead-free vitreous matrices.

The invention discloses a solar intermediate-temperate high-temperature selective absorbing coating. The coating sequentially comprises an infrared high-reflection layer, a first absorbing layer, a second absorbing layer and an antireflection layer on the surface of a substrate from bottom to top, the first absorbing layer and the second absorbing layer are composed of gradient compositions of boron-containing compounds prepared by physical vapor deposition, and the boron-containing compounds are metal boride, metal nitrogen boride, metal oxygen boride or metal nitrogen oxygen boride. The coating is high in absorption rate and low in emissivity, has good intermediate-temperate and high-temperature inoxidizability and can be used at the high temperature in a non-vacuum condition for a long time. During preparation, radio frequency sputtering is avoided, the substrate is not heated, large-scale industrial production can be realized extremely easily, and the solar intermediate-temperate high-temperature selective absorbing coating has the advantages of energy conservation, easiness in control, low preparation cost, quick film formation and the like.

The invention discloses a hexagonal boron nitride two-dimensional ultrathin nanometer sheet as well as a preparation method and application thereof and belongs to the technical field of nanometer materials. According to the invention, metal boride (such as calcium boride, lanthanum boride, magnesium boride, titanium boride and the like) is adopted as a boron resource; ammonium salt (such as ammonium chloride, ammonium bromide, ammonium nitrate and the like) is adopted as a nitrogen source; and the hexagonal boron nitride two-dimensional ultrathin nanometer sheet with the thickness of 0.5-4.0nm is obtained through the reaction under a mild condition (at the temperature of 500-600 DEG C). The invention aims to realize the macro-quantity preparation of the hexagonal boron nitride two-dimensional ultrathin nanometer sheet at the mild temperature by adopting cheaper raw materials; the preparation method has the advantages of saving the energy, simplifying the experimental step and greatly reducing the product cost; and due to the high heat conductivity, heat stability and chemical stability, the hexagonal boron nitride two-dimensional ultrathin nanometer sheet can be applied to the fields of heat dissipation materials, polymer filling materials, catalyst carriers and the like.

A nanocrystal particle including: a semiconductor material; boron and optionally fluorine, wherein the particle has an organic ligand bound to a surface thereof, the boron is present as being doped in the particle or as a metal boride and the fluorine is present as being doped in the particle or as a metal fluoride.

The method comprises the steps of: impregnating the part with a liquid impregnation composition containing at least a phosphate type compound, at least via a fraction of the outside surface of the part; applying a coating composition on said fraction of the outside surface of the part, the coating composition comprising a colloidal suspension of at least one refractory oxide in water, at least one compound essentially of the borosilicate type in powder form and having healing properties, and at least one metallic boride in powder form; and applying heat treatment after applying the coating composition.

In various embodiments, composite materials containing a ceramic matrix and a carbon nanotube-infused fiber material are described herein. Illustrative ceramic matrices include, for example, binary, ternary and quaternary metal or non-metal borides, oxides, nitrides and carbides. The ceramic matrix can also be a cement. The fiber materials can be continuous or chopped fibers and include, for example, glass fibers, carbon fibers, metal fibers, ceramic fibers, organic fibers, silicon carbide fibers, boron carbide fibers, silicon nitride fibers and aluminum oxide fibers. The composite materials can further include a passivation layer overcoating at least the carbon nanotube-infused fiber material and, optionally, the plurality of carbon nanotubes. The fiber material can be distributed uniformly, non-uniformly or in a gradient manner in the ceramic matrix. Non-uniform distributions may be used to form impart different mechanical, electrical or thermal properties to different regions of the ceramic matrix.

A tough ultra-high temperature ceramic (UHTC) composite comprises grains of UHTC matrix material, such as HfB₂, ZrB₂ or other metal boride, carbide, nitride, etc., surrounded by a uniform distribution of acicular high aspect ratio reinforcement ceramic rods or whiskers, such as of SiC, is formed from uniformly mixing a powder of the UHTC material and a pre-ceramic polymer selected to form the desired reinforcement species, then thermally consolidating the mixture by hot pressing. The acicular reinforcement rods may make up from 5 to 30 vol % of the resulting microstructure.

In one embodiment of the present invention, inert nano-sized particles having dimensions from 1 nm to 1,000 nm are added into a solder ball. The inert nano-sized particles may comprise metal oxides, metal nitrides, metal carbides, metal borides, etc. The inert nano-sized particles may be a single compound, or may be a metallic material having a coating of a different material. In another embodiment of the present invention, a small quantity of at least one elemental metal that forms stable high melting intermetallic compound with tin is added to a solder ball. The added at least one elemental metal forms precipitates of intermetallic compounds with tin, which are dispersed as fine particles in the solder.

The present invention is concerned with a system and method for introducing a substance into cells. The system has an assembly including a plurality of elongate non-hollow nanoneedles forming a nanoneedle array or patch for delivering the substance into the cells, at least some of the nanoneedles have a non-uniform diameter with a wider upper end, a narrower lower end for penetration into the cells and a length from substantially 200 nm to 100 um. The lower end has a diameter from substantially 20-436 nm. Adjacent nanoneedles are spaced apart by substantially 5-50 um. The nanoneedles are made from a material selected from the group consisting of diamond, cubic boron nitride, carbon nitride, boron nitride, boron carbon nitride, metal borides and essentially boron materials, allowing the nanoneedles to maintain sufficient thinness and yet adequate rigidity during penetration. The nanoneedles are applied onto the cells grown on substrates at a preferred rate from 1 to 5 m/s. Alternatively, the nanoneedles are applied onto the cells grown on substrates by centrifugation force from 0.5 to 10 nN. Yet alternatively, the cells suspended in a fluid are applied to the nanoneedle array at a rate of 1 to 10 m/s.