7294results about "Photosensitive materials" patented technology

A radiation-sensitive composition includes a radically polymerizable component that comprises carboxy groups, an initiator composition to generate radicals, and a polymeric binder comprising poly(alkylene oxide) segments and optionally pendant cyano groups. This composition can be used to prepare imageable elements such as negative-working, on-press developable printing plate precursors.

A pseudo composite material, may include, inter alia, a first phase and a second phase, wherein each phase may include, inter alia, an organic compound, wherein each phase comprising a multiplicity of construction layers, wherein the layers were deposited by ink-jet printing, wherein the pseudo composite material exhibits non-homogeneous three-dimensional structure. A method is disclosed for the preparation of a pseudo composite material. An apparatus is disclosed for printing a pseudo composite material. Furthermore, there is disclosed a method for printing a three-dimensional object using various suitable materials.

A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.

Photoresist polymers and photoresist compositions are disclosed. A photoresist polymer comprising a polymerization repeating unit represented by Formula I is less sensitive to change in the amount of energy due to its higher active energy than that of a conventional photoresist polymer. As a result, a phenomenon where the portion of the pattern for the storage electrode contact region that receives relatively large amount of light becomes too thin is avoided when the device isolation film pattern is formed, and wherein pattern collapse caused by a high aspect ratio due to high etching resistance is prevented or avoided.whereinR1–R10, a, b, c and d are as defined in the description.

The present invention relates to a cross-linker for photoresist compositions which is suitable for a photolithography process using KrF (248 mn), ArF (193 mn), E-beam, ion beam or EUV light sources. Preferred cross-linkers, according to the present invention, comprise a copolymer of (i) a compound represented by following Chemical Formula 1 and / or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride. ##STR1## wherein, R.sub.1 and R.sub.2 individually represent straight or branched C.sub.1-10 alkyl, straight or branched C.sub.1-10 ester, straight or branched C.sub.1-10 ketone, straight or branched C.sub.1-10 carboxylic acid, straight or branched C.sub.1-10 acetal, straight or branched C.sub.1-10 alkyl including at least one hydroxyl group, straight or branched C.sub.1-10 ester including at least one hydroxyl group, straight or branched C.sub.1-10 ketone including at least one hydroxyl group, straight or branched C.sub.1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C.sub.1-10 acetal including at least one hydroxyl group; and R.sub.3 represents hydrogen or methyl.

An anti-reflection film comprises a high refractive index layer having a refractive index of 1.65-2.40, and a low refractive index layer having a refractive index of 1.20-1.55. Another anti-reflection film comprises only a low refractive index layer having a refractive index of 1.20-1.55. In the invention, the first improvement resides in a high refractive index layer composed of inorganic fine particles having a mean particle size of 1-200 nm in an amount of 5-65 vol. % and a crosslinked anionic polymer in an amount of 35 to 95 vol. %. The second improvement resides in a low refractive index layer composed of inorganic fine particles having a mean particle size of 0.5-200 nm in an amount of 50-95 wt. % and a polymer in an amount of 5-50 wt. %, and two or more of those particles are piled up to form micro voidsby the adjacent particles.

A method of generating patterns of a pair of photomasks from a data set defining a circuit layout to be provided on a substrate includes identifying critical segments of the circuit layout to be provided on the substrate. Block mask patterns are generated and then legalized based on the identified critical segments. Thereafter, phase mask patterns are generated, legalized and colored. The legalized block mask patterns and the legalized phase mask patterns that have been colored define features of a block mask and an alternating phase shift mask, respectively, for use in a dual exposure method for patterning features in a resist layer of a substrate.

A positive resist composition comprises: (A) a resin that has a repeating unit represented by general formula (a1) and increases its solubility in an alkali developer by action of an acid; (B) a compound which generates an acid upon irradiation with an actinic ray or a radiation; and (C) a resin that has at least one of a fluorine atom and a silicon atom and has a group selected from the group consisting of (x), (y) and (z); and (D) a solvent:(x) an alkali-soluble group;(y) a group capable that decomposes by action of an alkali developer to undergo an increase in a solubility of the resin (C) in an alkali developer; and(z) a group that decomposes by action of an acid,wherein R represents a hydrogen atom or a methyl group, Rxa represents an alkyl group or a cycloalkyl group, and n represents an integer of 1 to 8.

The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat / planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.

This invention relates to antireflective coatings comprising polymeric polyoxyalkylenated colorants. More particularly, the present invention relates to antireflective coatings for utilization in forming thin layers between reflective substrates and photoresist coatings. Such antireflective coatings are very useful and beneficial within the production and fabrication of semiconductors through photolithographic procedures due to the liquid, non-crystallizing nature of polyoxyalkylenated colorants, and the lack of potentially damaging counterions, metals, and / or electrolytes within the inventive antireflective colored coatings. The inventive coatings may also be applied on lenses, mirrors, and other optical components. Methods of forming such antireflective coatings are also contemplated within this invention.

Novel silsesquioxane polymers are formed by methods which avoid the use of BBr3. The novel silsesquioxane polymers are especially useful in negative photoresist compositions and photolithographic processes. Alternatively, improved silsesquioxane polymer-containing negative photoresist compositions are obtained by using a polymer component containing a blend of silsesquioxane polymer and non-silsesquioxane polymer. The photoresist compositions provide improved dissolution characteristics enabling the use of 0.26 N TMAH developer. The photoresist compositions also provide improved thermal characteristics enabling use of higher processing temperatures. The photoresist compositions are especially useful in a multilayer photolithographic processes and are capable of producing high resolution.

A novel photoacid generator containing a structure of the following formula (I), wherein R is a monovalent organic group with a fluorine content of 50 wt % or less, a nitro group, a cyano group, or a hydrogen atom, and Z1 and Z2 are individually a fluorine atom or a linear or branched perfluoroalkyl group having 1-10 carbon atoms, is provided. When used in a chemically amplified radiation-sensitive resin composition, the photoacid generator exhibits high transparency, comparatively high combustibility, and no bioaccumulation, and produces an acid exhibiting high acidity, high boiling point, moderately short diffusion length in the resist coating, and low dependency to mask pattern density.

To a resist composition, an alkali-soluble polymer having fluorinated ester-containing lactone units incorporated therein is included as an additive. The resist composition forms a resist film having a reduced contact angle after development. The resist film prevents water penetration during immersion lithography.

The object of the present invention is to provide a radiation-sensitive colored composition which can supress the generation of the contamination of the device.A radiation-sensitive colored composition including: (A) a dye containing of from 10 ppm to 1000 ppm of a halogen ion; (B) a polymerizable compound; and (C) a solvent.

A manufacturing process technology creates a pattern on a first layer using a focused ion beam process. The pattern is transferred to a second layer, which may act as a traditional etch stop layer. The pattern can be formed on the second layer without irradiation by light through a reticle and without wet chemical developing, thereby enabling conformal coverage and very fine critical feature control. Both dark field patterns and light field patterns are disclosed, which may enable reduced or minimal exposure by the focused ion beam.

Copolymer structures are formed by exposing a substrate with an imaging layer thereon to two or more beams of selected wavelengths to form interference patterns at the imaging layer to change the wettability of the imaging layer in accordance with the interference patterns. A layer of a selected block copolymer is deposited onto the exposed imaging layer and annealed to separate the components of the copolymer in accordance with the pattern of wettability and to replicate the pattern of the imaging layer in the copolymer layer. Stripes or isolated regions of the separated components may be formed with periodic dimensions in the range of 100 nm or less.

Various embodiments disclosed herein relate to optical elements comprising an at least partial coating having a first state and a second state connected to at least a portion of a substrate, the at least partial coating being adapted to switch from the first state to the second state in response to at least actinic radiation, to revert back to the first state in response to thermal energy, and to linearly polarize at least transmitted radiation in at least one of the first state and the second state. Other embodiments relate to optical elements comprising a substrate and at least one at least partially aligned photochromic-dichroic compound connected to at least a portion of the substrate and having an average absorption ratio greater than 2.3 in the activated state as determined according to CELL METHOD. Still other embodiments relate to security devices, liquid crystal cells and methods of making the same.

A fully curable jettable composition having a viscosity less than 30 cps at a temperature within the range of 15-180° C., more preferably at a temperature of 15-100° C., e.g. 60-80° C. the composition comprising: (A) at least one low viscosity reactive resin selected from the group consisting of compounds containing an oxetane ring, cycloaliphatic epoxy resins, tetrahydrofurans, hexahydropyrans and mono-functional (meth)acrylates, said resin having a molecular weight of not greater than 300 Daltons, e.g. 250 Daltons or less, and a viscosity at a temperature in the said range of less than 30 cps, e.g. 5 to 15 cps; (B) at least one higher viscosity resin selected from the group consisting of epoxy resins, compounds containing an oxetane ring and acrylates, which resin acts to thicken the low viscosity resin and strengthen a jetted deposit of the composition, the higher viscosity resin having: a viscosity greater than twice that of the low viscosity resin at the said temperature in the range stated above, and a functionality of greater than or equal to 2; (C) at least one curable toughener, preferably having a functionality of at least 2, such as hydroxy, epoxy, acrylic or other reactive functionalised polymer / oligomer (e.g. derived by functionalising poly(tetrahydrofuran), polycaprolactone, polycarbonate diol, or a dendrimeric polyol; (D) at least one initiator for the polymerisation of the resins, and (E) at least one stabiliser for delaying the curing of the resins of the composition; wherein the low viscosity resin is slower to react than the higher viscosity resin and acts to solvate the higher viscosity resin prior to curing and at least partly during curing and wherein at least 30% of the components A and B are cationically curable resins. The composition can be jetted from piezo electric printing heads under the control of a computer program to form a multi-layered article, e.g. a three dimensional article, in which the adjacent droplets merge and are cured homogeneously together.

Photoresists and associated processes for microlithography in the extreme, far, and near UV are disclosed. The photoresists in some embodiments comprise (a) a fluorine-containing copolymer derived from at least one polycyclic ethylenically unsaturated compound and at least one compound having at least one fluorine atom covalently attached to an ethylenically unsaturated carbon atom; and (b) at least one photoactive component. In other embodiments, the photoresists comprise a fluorine-containing copolymer derived from at least one polycyclic ethylenically unsaturated compound having at least one atom or group covalently attached to a carbon atom contained within a ring structure and separated from each ethylenically unsaturated carbon atom of the ethylenically unsaturated compound by at least one covalently attached carbon atom, wherein the atom or group is selected from the group consisting of fluorine perfluoroalkyl and perfluoroalkoxy.

A heat-sensitive negative-working lithographic printing plate precursor includes on a grained and anodized aluminum support a coating including hydrophobic thermoplastic polymer particles, a hydrophilic binder, and an organic compound, wherein the organic compound includes at least one phosphonic acid group or at least one phosphoric acid group or a salt thereof.

A photosensitive composition is prepared containing a polymer of the formula B(X)(Y) wherein B represents an organic backbone, each X independently is an acidic group or salt thereof and each Y independently is a photocurable group and a photoinitiating compound or compounds. Preferably, free-radically polymerizable multi-functional monomer and / or oligomer is added to the photosensitive composition. The photosensitive composition can be coated on a suitable substrate for planographic printing plate applications. Imagewise irradiation causes the light struck regions to photocure, becoming insoluble in aqueous and organic mediums, while the non-light struck regions remain highly soluble / dispersable. Printing plates of this construction do not require processing prior to being run on a press.

A novel ester compound having an exo-form 2-alkylbicyclo[2.2.1]heptan-2-yl group as the protective group is provided as well as a polymer comprising units of the ester compound. The polymer is used as a base resin to formulate a resist composition having a higher sensitivity, resolution and etching resistance than conventional resist compositions.

Negative working thermally imageable elements useful as lithographic printing plate precursors and methods for their use are disclosed. The elements have a substrate, a layer of imageable composition over the substrate, and, optionally, an overcoat layer over the layer of imageable composition. The imageable composition has an allyl-functional polymeric binder. Optimum resolution and on-press performance can be attained without a post-exposure bake. The elements do not require a post-exposure bake and can be used in on-press development applications.

The following resist composition which is excellent particularly in transparency to light beams and dry etching properties and gives a resist pattern excellent in sensitivity, resolution, evenness, heat resistance, etc., as a chemical amplification type resist, is presented. A resist composition which comprises a fluoropolymer (A) having repeating units represented by a structure formed by the cyclopolymerization of one molecule of a fluorinated diene and one molecule of a monoene, in which the monoene unit in each repeating unit has a blocked acid group capable of regenerating the acid group by the action of an acid, an acid-generating compound (B) which generates an acid upon irradiation with light, and an organic solvent (C).