50 results about "Chemical amplification" patented technology

The invention relates to the technical field of photoresists, in particular to a positive chemical amplification type photoresist as well as a preparation method, a use method and application thereof, and aims to solve the problems that the photoresist is easily subjected to bottom residue on a metal substrate after development, and the etching yield is poor after metal electroplating in a subsequent process. The key points of the technical scheme are as follows: the mixed resin comprises first resin and second resin; an initiator, wherein the initiator comprises a photoacid production compound; the quenching agent is an alkaline agent or an acid-induced alkali production agent; the auxiliary agent comprises a protective agent, and the protective agent is a group modified azole compound; the solvent is used for dissolving the substances to prepare the positive chemical amplification type photoresist, and by optimizing the composition and the process of the positive chemical amplification type photoresist, on the premise of ensuring the adaptability and the stability of the process, the problems of the side wall angle of a product after exposure and development and the residual of the photoresist on the bottom of a metal substrate after development are effectively improved.

The utility model relates to the technical field of environmental air pollutant concentration monitoring, and provides a peroxy radical chemical amplification device which comprises a sampling-amplification channel, a first acquisition control circuit module is arranged in the sampling-amplification channel and used for controlling an electric control program of a device system, and a second acquisition control circuit module is arranged in the sampling-amplification channel. An HO photolysis module is arranged in the sampling-amplification channel, a second acquisition control circuit module is arranged in the sampling-amplification channel and used for controlling an electric control program of the device system, and a gas path module is arranged in the sampling-amplification channel and used for controlling the gas flow direction of the device system; according to the utility model, the sampling-amplifying channel is arranged, so that the device is simple in structure, simple to operate, low in manufacturing cost and high in time resolution; the inhibition effect of the environment humidity on the amplification reaction is solved to a certain extent, and the actual effects of accurate measurement, simple operation and stable operation are obtained.

The invention provides a transformer oil acetylene degassing-free detection method and system based on click chemistry, and relates to the technical field of gas detection analysis, a first product generated by a first click chemical reaction and a second product generated by a second click chemical reaction are used as catalysts to trigger a subsequent same cascade chemical amplification reaction, and the detection result is accurate. A single product molecule can catalytically hydrolyze a large number of acid-sensitive substrates, the conductivity of a mixed solution is obvious and can be measured and changed, accurate detection of acetylene with extremely low concentration is realized, and meanwhile, acetylene detection is calculated by utilizing a second click chemical reaction synchronously generated by an internal standard reagent and a triggering agent and independent of an acetylene concentration detection process, so that the accuracy of acetylene detection is improved. According to the method, the signal ratio is obtained by calculating the ratio of the first electric signal value to the second electric signal value instead of the single first electric signal value, interference factors are offset, online self-correction of acetylene detection is realized, and high consistency and accuracy of detection results under different times and different batches of reagents are ensured.

The invention is applicable to the technical field of biological detection, and provides a method for detecting staphylococcus aureus based on combination of a screen-printed electrode and CRISPR / Cas13a, a probe containing a DNA / RNA hybrid chain is combined with a magnetic bead to form a simple composite structure, when the Cas13a recognizes 16sRNA of S. aureus, trans-cleavage activity can be immediately activated, the probe chain is rapidly cut off, the cut-off amount depends on the activated amount, and when the Cas13a recognizes 16sRNA of S. aureus, the Cas13a can be used for detecting staphylococcus aureus. And after transient magnetic separation, a result is observed on the screen-printed electrode. The method has ultrahigh specificity: the CRISPR / crRNA sequence ensures that staphylococcus aureus and other microorganisms can be accurately distinguished; the trans-cutting of Cas13a provides chemical amplification, and the magnetic separation purification greatly reduces background signals caused by non-specific adsorption, so that the signal-to-noise ratio and the sensitivity are remarkably improved.

The application discloses a kind of for mixed cresol separation continuous amplification production process and method, belong to mixed cresol separation and purification field.This process solves the problem of low flow, difficult to control, temperature-resistant equipment selection difficult in early stage working condition exploration, proposes the design concept of "breathing mouth".Further, a kind of "exogenous" online detection system can effectively avoid the influence of analysis results due to excessive flow temperature, excessive pressure, high concentration, reduce the complexity of structure design;For the problem of large amount of desorbent, an efficient desorbent extraction system is proposed, which can realize efficient recovery of desorbent and separation and purification of m-cresol product.The process and method are scientific and reasonable, and can realize continuous production, and have important role in mixed cresol separation amplification production.At the same time, it also has wide applicability in other chemical amplification production, separation and purification fields.

The present application provides a kind of chemical amplification positive photosensitive resin composition and its application, the chemical amplification positive photosensitive resin composition includes a first resin (A1), a second resin (A2), a photoacid generator (B), a solvent (C), a compound (D) shown in formula (6) or formula (7) and a hindered amine compound (E) shown in formula (e1), and the protective film prepared has the advantages of good sensitivity and stability over time.The present application is also about the protective film prepared by the chemical amplification positive photosensitive resin composition and the component comprising the protective film.

The invention relates to a chemically amplified positive resist composition and a resist pattern forming method. The present invention addresses the problem of providing, in optical lithography using high-energy rays, excellent solvent solubility and excellent lithography performance such as resolution, LER, and pattern shape, while preventing pattern collapse in the formation of fine patterns, and also providing a method for manufacturing the same. The present invention relates to a chemically amplified positive resist composition having excellent etching resistance, and a method for forming a pattern using the chemically amplified positive resist composition. The solution of the present invention is a chemically amplified positive resist composition comprising: a base polymer (A) which is a polymer having increased solubility in aqueous alkali due to the action of an acid, the present invention relates to a polymer which contains a repeating unit comprising an aromatic sulfonic acid anion represented by formula (A1-1) and a sulfonium cation represented by formula (A1-2), and a repeating unit represented by formula (A2), and which has increased solubility in aqueous alkali due to the action of an acid.

The invention provides a novel chemical amplification photoresist as well as a preparation method and a use method thereof. The novel chemical amplification photoresist comprises polymer resin containing a protecting group, a photoacid generator, an acid quenching agent and a solvent, wherein the photoacid generator comprises a first photoacid generator, and the first photoacid generator comprises at least one N-sulfonyloxy imide compound. According to the novel chemical amplification photoresist and the preparation method thereof, the N-sulfonyloxy imide compound is introduced as the first photoacid generator, so that the photoacid generation efficiency after exposure is obviously higher than that of a traditional photoacid generator, and when the novel chemical amplification photoresist is used for a substrate of which the surface is provided with a thin film layer which is slightly alkaline or rich in dangling bonds, the photoacid generation efficiency is obviously improved; the formation of residues or bottom feet at the bottom of a photoresist exposure area can be effectively inhibited, the influence on the resolution and morphology of a photoetching pattern is avoided, and the photoresist poisoning phenomenon can be prevented; and an additional surface treatment process does not need to be added, so that the substrate can be prevented from being damaged, and the process complexity and the process cost can be prevented from being increased.

The invention provides poly (p-hydroxystyrene) resin, a preparation method thereof and KrF photoresist, and relates to the technical field of photoresist. According to the poly (p-hydroxystyrene) resin provided by the invention, a specific amide derivative is introduced into a resin matrix, and the resin is mixed with other additives, so that a chemical amplification type photoresist composition which is suitable for different film thicknesses and has high resolution, high sensitivity and small edge roughness is formed. The KrF photoresist provided by the invention can provide good resolution and edge roughness in the application of the thick film photoresist, meanwhile, the sensitivity of the photoresist can be improved, the solubility of the photoresist after exposure and development is increased, and defects are reduced. Therefore, the problem of insufficient chip yield caused by pattern deviation in the subsequent ion implantation or etching process due to poor pattern morphology, large edge roughness and low resolution of the thick film photoresist is solved.

The invention provides a photoacid generator, a preparation method of the photoacid generator, a chemical amplification type photoresist and a preparation method of the chemical amplification type photoresist, and relates to the field of photoresist. The structural formula of the photoacid generator provided by the invention is shown in the specification, and the photoacid generator is sulfonium salt taking 5-tert-butyl-3-methyl-4-methylimidazo [1, 5-a] quinoline-3, 5-dicarboxylate as an acidic unstable group. The acidic unstable group is decomposed into an acid under high-energy radiation, the acidic unstable group is effectively decomposed into a carboxylic acid derivative and an imidazo [1, 5-a] quinoline derivative under the action of the acid and PDB (photolysis alkali), and the imidazo [1, 5-a] quinoline derivative can inhibit the diffusion rate of photoacid in the resist, so that the resistance of the resist is improved. Therefore, the dissolution rate of the photoresist in the developing solution after exposure is changed, and the problem of top loss after exposure and development of the photoresist is further solved.

The invention discloses a bifunctional molecular group structure for photoresist. The bifunctional molecular group structure comprises a linker, PAG molecules and PDQ molecules. And the linker contains a carbon-oxygen chemical bond or a carbon-nitrogen chemical bond. PAG molecules and PDQ molecules are synthesized on each linker at the same time, wherein the number of the PAG molecules and the number of the PDQ molecules are in proportion, and the total number of the PAG molecules and the PDQ molecules is three or more. And PAG molecules are synthesized on the linker through a carbon-oxygen chemical bond. PDQ molecules are synthesized on the linker through a carbon-nitrogen chemical bond. The invention also discloses a synthesis method of the bifunctional molecular group structure for the photoresist. The invention also discloses a use method of the photoresist adopting the bifunctional molecular group structure. According to the invention, the proportion of PAG molecules to PDQ molecules can be set, so that the uniformity of PAG and PDQ in the photoresist can be ensured, the uniformity and roughness of the line width of the photoresist can be ensured, and different requirements of users on the contrast ratio and light sensitivity of chemical amplification glue can be met at the same time.

The application discloses a kind of chemical amplification type positive photoresist and its application, belong to photoetching material technical field.The chemical amplification type positive photoresist includes following mass percentage of each component: polymer resin 5%-20%, photoacid generator 0.05%-1%, basic quencher 0.001%-0.05%, leveling agent 100ppm-1000ppm, solvent is remainder;Wherein the polymer resin includes first copolymer and second copolymer, the polymerized monomer of the first copolymer includes: polycyclic alkyl protected methacrylic ester, long-chain alkyl protected methacrylic ester, alpha-oxygen group protected methacrylic ester and methacrylic acid, the polymerized monomer of the second copolymer includes hydroxyl styrene, styrene and tert-butyl acrylate.By chemical amplification type positive photoresist as described above, the application can make chemical amplification type positive photoresist when using shorter wavelength light source, keep better resolution and higher contrast.

The invention relates to a sulfonium salt, a chemically amplified resist composition and a pattern forming method. The present invention provides a sulfonium salt represented by formula (1), a chemically amplified resist composition containing the sulfonium salt as a quencher, and a pattern forming method using the chemically amplified resist composition. In the formula, Z-represents an aromatic carboxylic acid anion which may have a substituent.

The invention belongs to the technical field of organic synthesis, and provides a method for continuously synthesizing a phosphorothioate compound, the preparation method can be completed only by pumping a compound of a formula (II) and a toluene solution of sulfur into a microchannel reactor and staying for 2-5 minutes, the reaction process is safe and easy to control, the engineering amplification is simple and efficient, and the yield is high. The common problems of success of a small test and failure of a pilot test in traditional chemical amplification are solved.

The present application provides a kind of chemical amplification positive photosensitive resin composition, protective film and assembly.The chemical amplification positive photosensitive resin composition includes resin (A), photoacid generator (B), solvent (C) and epoxy compound (D).The present application further includes the protective film prepared by using the chemical amplification positive photosensitive resin composition, and the assembly including the protective film.The protective film has good developing adhesion and chemical resistance, and can be applied to thin film transistor substrate flat film, interlayer insulating film or optical waveguide core material or cladding material.

The present invention relates to a chemically amplified positive resist composition and a resist pattern forming method. The present invention provides a chemically amplified positive resist composition which is excellent in solvent solubility, high in sensitivity, high in contrast, excellent in lithography properties such as resolution, LER, and the like, and in which development defects are still suppressed and etching resistance is also excellent at the time of fine pattern formation, and a pattern forming method using the same in optical lithography using high-energy rays. A chemically amplified positive resist composition comprising (A) a base polymer containing a polymer which contains a repeating unit represented by the following formula (A1) and whose solubility in an aqueous alkali solution increases due to acid action, and (B) a photo-acid generator composed of an onium salt represented by the following formula (B). In the formula, Z + is an onium cation, Ar AL is an acid-labile group-containing group represented by the following formula (AL), but at least one Ar AL and the carbon atom adjacent to the carbon atom bonded to -SO3 ‑ is bonded.

The invention relates to an onium salt monomer, a haplotype photoacid generator, a polymer, a chemically amplified resist composition and a pattern forming method. The present invention is an onium salt monomer represented by general formula (A). Therefore, the chemical amplification resist composition can exhibit excellent solvent solubility, high sensitivity and high acid diffusion inhibition performance, thereby exhibiting excellent photoetching performance. [In the formula, at least one of R1 and R2 located at the alpha position and / or beta position with respect to the SO3-group is a pentafluorothio group or the substituent-containing tetrafluorothio group. W and / or XL1 contains an aromatic ring. Z + represents a sulfonium cation represented by general formula (Z-1) or a cation represented by general formula (Z-2). ] [Chemical 2]

This invention provides a chemically amplified positive photosensitive resin composition and its preparation method, as well as a microlens and its preparation method. The chemically amplified positive photosensitive resin composition comprises the following components: a first resin A, a second resin B, a photoacid generator C, a quencher D, and a solvent E. By designing the specific composition of the chemically amplified positive photosensitive resin composition, and through the synergistic effect of the first resin A and the second resin B with specific structures, this invention effectively reduces the Tg and reflow temperature of the first resin A and the second resin B, thereby lowering the reflow temperature for preparing microlenses using this chemically amplified positive photosensitive resin composition. This achieves the goal of preparing microlenses at low-temperature reflow (<100℃) and improves the contrast, resolution, and etching resistance of the microlenses.

The invention provides ester-containing tertiary amine, a preparation method thereof, a chemical amplification resist composition and application thereof, and relates to the technical field of photoresist. According to the preparation method of the ester-containing tertiary amine, provided by the invention, the acrylate and the substituted methylamine are subjected to the Michael addition reaction, and the reaction time for synthesizing the ester-containing tertiary amine is greatly shortened by adjusting the feeding proportion and the reaction temperature, controlling the solvent and adding the catalyst; and the high-purity crude product can be obtained only through simple post-treatment, the raw materials required by the reaction are easy to purchase, and the reaction device is simple and easy to operate, so that the method can be used for large-scale production, and the market blank of the ester-containing tertiary amine can be filled. In addition, the synthesis method provided by the invention shows excellent and wide substrate tolerance, and can continue to expand the structural library of the ester tertiary amine-containing compounds. The ester-containing tertiary amine provided by the invention can be used as an additive acid diffusion inhibitor to be added into a photoresist formula, so that the performance of the photoresist is remarkably improved.

The invention provides a chemical amplification negative photoresist composition and application thereof. The chemical amplification negative photoresist composition is prepared from the following components in parts by weight: 5 to 25 parts of first phenolic resin, 5 to 25 parts of second phenolic resin, 3 to 8 parts of a cross-linking agent, 0.5 to 1.5 parts of a photoacid generator, 0.1 to 1.0 part of an alkaline additive, 0.5 to 1.5 parts of a functional additive and 40 to 70 parts of a solvent, wherein the weight-average molecular weight of the first phenolic resin is 2000 to 5000, and the weight-average molecular weight of the second phenolic resin is 8000 to 15000. The chemical amplification negative photoresist composition disclosed by the invention can be implemented through a single-layer photoresist process, is in an inverted trapezoidal shape, is controllable in undercut size, and is easy to peel after being cured after crosslinking. The photoresist prepared from the chemical amplification negative photoresist composition disclosed by the invention can be better applied to the fields of MEMS (Micro Electro Mechanical System) devices, packaging bumps and the like.

The invention relates to a unimolecular resin non-chemical amplification type photoresist based on cascade reaction as well as a preparation method and application of the unimolecular resin non-chemical amplification type photoresist. The monomolecular resin non-chemically amplified photoresist comprises a compound as shown in a formula (I). The triphenylsulfonium cation in the compound shown in the formula (I) is subjected to photolysis reaction after being illuminated to release protonic acid, the protonic acid and carboxylate radical form carboxylic acid, and the carboxylic acid further reacts with hydroxyl on the gamma position to form lactone. An ionic compound with high polarity is changed into a lactone compound with low polarity before and after illumination, and the solubility is obviously changed before and after illumination. Due to the cascade reaction, the sensitivity of the photoresist material is improved, remarkable solubility conversion is generated, and the requirement of high-resolution photoetching can be better met.

The invention discloses a photomask blank and a protective plating layer thereof, and the photomask blank comprises a transparent substrate which is arranged at the lowest part of the photomask blank; the light-shielding film is arranged on the transparent substrate and comprises a first anti-reflection layer, a second anti-reflection layer and a light-shielding layer; the light shielding layer is arranged on the first anti-reflection layer; the second anti-reflection layer is arranged on the light shielding layer; the protective film is arranged on the light-shielding film and is used for isolating the substance for reducing the light resistance function from moving to the chemical amplification type light resistance film; and the chemical amplification type photoresist film is arranged on the protective film. A protective film is plated on a traditional photomask substrate containing a chromium-rich material, the carbon content and the nitrogen content of the protective film are controlled to be smaller than 10 atm%, the oxygen content of the protective film is higher than 40 atm%, a nitrogen-rich, carbon-rich and low-oxygen traditional chromium film is separated from a chemical amplification type photoresist film, and therefore the chromium-rich and low-oxygen photomask is obtained. The substance with the chemical amplification function of the photoresist film is prevented from moving from the bottom of the photoresist film to the blank of the photomask, and meanwhile, the adhesive force between the photoresist film and the chromium-containing film is increased.

The invention relates to the technical field of photosensitizers, in particular to a fluoride-free onium salt type photoacid generator, a preparation method of the fluoride-free onium salt type photoacid generator and a chemical amplification type photoresist composition. The onium salt type comprises a sulfonium salt type and an iodonium salt type, and the application of fluoride-free anion design in different cation structures is expanded. The onium salt acid generator is stable in structure, high in photosensitivity, free of fluorine elements, suitable for KrF and ArF wavelength photoetching processes of 248 nm and 193 nm and applied to a photoresist composition, and obtained photoresist has high resolution, good photosensitivity and excellent thermal stability and etching resistance.

The application discloses a kind of thiol and 4-methyl amino pyridine bifunctional group modified silica gel base material and its preparation and its application in catalytic synthesis, removal of acidic and alkaline residual impurities, removal of metal ion impurities for a kind of 248nm photoresist resin.The application is suitable for semiconductor photoresist resin electronic chemical synthesis and purification technical field.A new type of modified silica gel material containing bifunctional group is provided, which can be used for catalytic synthesis and purification of semiconductor, display electronic chemicals, especially suitable for catalytic synthesis and purification of metal ion impurities for a kind of semiconductor chemical amplification type photoresist resin, and has wide application prospect.

The utility model discloses a peroxide radical chemical amplification module, which relates to the technical field of environmental air pollutant concentration monitoring and comprises a four-way valve, three gas storage tanks are arranged at the bottom end of the side surface of the four-way valve, and a source intensity three-way valve and a gas mixing three-way valve II are arranged at the top end of the four-way valve. A first gas mixing three-way valve is arranged on the side, away from the gas storage tank, of the bottom end of the four-way valve, and the first gas mixing three-way valve, the four-way valve, the source intensity three-way valve and the second gas mixing three-way valve are used for controlling circulation and entering of gas. According to the utility model, the flow of a detection instrument is directly controlled through an integral module to realize accurate flow control in sampling and amplification processes, and an experimenter is helped to carry out deeper research and analysis. The module is simple in structure, easy to operate, low in manufacturing cost and high in time resolution, and the inhibition effect of the environment humidity on the amplification reaction is achieved to a certain extent.

The invention relates to a sulfonium salt, a chemically amplified resist composition and a pattern forming method. The present invention addresses the problem of providing an optical lithography using high-energy rays, the present invention relates to an onium salt used in a chemically amplified resist composition having excellent solvent solubility, high sensitivity, high contrast, and excellent lithography performance such as LWR, CDU, MEF, EL, and DOF, a chemically amplified resist composition containing the onium salt as a photoacid generator, and a pattern forming method using the chemically amplified resist composition. [Solution] A sulfonium salt comprising an aromatic sulfonic acid anion represented by formula (1A) and a sulfonium cation represented by formula (1B).

This invention discloses a self-decomposing polymer based on polybenzyl ether, its preparation method, and a non-chemical amplification photoresist containing the polymer. The polymer has a general structure as shown in one of the following structures, which can be used as a host material for a single-component non-chemical amplification photoresist. When the prepared polymer film is exposed, cascade self-decomposition occurs through the departure of end groups and the electronic resonance rearrangement of the polybenzyl ether backbone along the main chain, generating low-molecular-weight monomers. This creates a solubility difference between the exposed and unexposed areas, avoiding the low sensitivity problem of traditional non-chemical amplification photoresists. While achieving high sensitivity, the decomposition reaction is confined to a single polymer molecule, resulting in a pattern with low line edge roughness and high resolution. (I, II, III, IV)

[Problem] In photolithography using energy lines, the present invention provides an onium salt used in a chemical amplification resist composition that is highly sensitive, has excellent resolution, improves lithography performance such as LWR, CDU, EL, DOF, and also suppresses the breakdown of the resist pattern, a chemical amplification resist composition, and a pattern formation method. [Solution] A sulfonium salt represented by the following formula (1).

The invention relates to a chemically amplified negative resist composition and a resist pattern forming method. The invention provides a chemically amplified negative resist composition and a method for forming a resist pattern, wherein the chemically amplified negative resist composition can improve resolution in pattern formation and can obtain a resist pattern with good LER and pattern loyalty. A chemically amplified negative resist composition comprising: (A) a photoacid generator comprising an onium salt composed of an anion represented by formula (A1) and a cation represented by formula (A2); and (B) a base polymer comprising a polymer containing a repeating unit represented by formula (B1).

The invention provides a chemical amplification photoresist based on a platinum (II) complex and application of the chemical amplification photoresist. The chemical amplification photoresist comprises polymer resin containing a protecting group, a photoacid generator, an acid quenching agent and a solvent, wherein the photoacid generator comprises a first photoacid generator, and the first photoacid generator comprises at least one platinum (II) complex. According to the invention, the platinum (II) complex is introduced as the first photoacid generator, sufficient effective acid can be generated in a slightly alkaline environment or an environment rich in dangling bonds, and the photoacid generation efficiency after exposure is obviously higher than that of a traditional photoacid generator, so that a deprotection reaction can be fully completed at the bottom of an exposure area of the photoresist, and the yield of the photoresist is improved. And the formation of residues or bottom feet can be effectively inhibited, and a photoetching pattern with high resolution and good morphology can be obtained.