80 results about "Chemical amplification" patented technology

The invention is suitable for the technical field of pollutant monitoring, and provides an ozone generation rate monitoring system and method, the system comprises a zero gas generation module, a gas distribution module, a multi-mode combination switching valve, a free radical generation source, a chemical amplification cavity and a detection module; the gas distribution module is used for inputting standard reactant gas with different components and sample gas sample; the input end of the multi-mode combined switching valve is connected with the zero gas generation module and the gas distribution module; a first output end of the multi-mode combined switching valve is connected with a gas inlet of the free radical generation source, a second output end is connected with a gas inlet of the chemical amplification cavity, and a third output end is connected with a gas outlet of the chemical amplification cavity; an exhaust port of the free radical generation source is connected with an air inlet of the chemical amplification cavity; and the exhaust port of the chemical amplification cavity is also connected with the detection module. According to the method, the ozone photochemical generation rate is directly obtained by accurately measuring data such as the total peroxy free radical concentration, the detection precision is higher, and the speed is higher.

The invention relates to the technical field of photoresists, in particular to a positive chemical amplification type photoresist as well as a preparation method, a use method and application thereof, and aims to solve the problems that the photoresist is easily subjected to bottom residue on a metal substrate after development, and the etching yield is poor after metal electroplating in a subsequent process. The key points of the technical scheme are as follows: the mixed resin comprises first resin and second resin; an initiator, wherein the initiator comprises a photoacid production compound; the quenching agent is an alkaline agent or an acid-induced alkali production agent; the auxiliary agent comprises a protective agent, and the protective agent is a group modified azole compound; the solvent is used for dissolving the substances to prepare the positive chemical amplification type photoresist, and by optimizing the composition and the process of the positive chemical amplification type photoresist, on the premise of ensuring the adaptability and the stability of the process, the problems of the side wall angle of a product after exposure and development and the residual of the photoresist on the bottom of a metal substrate after development are effectively improved.

The utility model relates to the technical field of environmental air pollutant concentration monitoring, and provides a peroxy radical chemical amplification device which comprises a sampling-amplification channel, a first acquisition control circuit module is arranged in the sampling-amplification channel and used for controlling an electric control program of a device system, and a second acquisition control circuit module is arranged in the sampling-amplification channel. An HO photolysis module is arranged in the sampling-amplification channel, a second acquisition control circuit module is arranged in the sampling-amplification channel and used for controlling an electric control program of the device system, and a gas path module is arranged in the sampling-amplification channel and used for controlling the gas flow direction of the device system; according to the utility model, the sampling-amplifying channel is arranged, so that the device is simple in structure, simple to operate, low in manufacturing cost and high in time resolution; the inhibition effect of the environment humidity on the amplification reaction is solved to a certain extent, and the actual effects of accurate measurement, simple operation and stable operation are obtained.

To provide an onium salt type monomer for a chemically amplified resist composition which has excellent solvent solubility and high sensitivity and contrast in photolithography using high-energy radiation, and is excellent in lithographic performance such as exposure tolerance (EL), LWR, CDU and depth of focus (DOF), and is also excellent in resistance to pattern collapse and etching resistance even in fine pattern formation; a polymer comprising a repeating unit derived from the onium salt type monomer; a chemically amplified resist composition comprising the polymer; and a pattern formation method using the chemically amplified resist composition.SOLUTION: The present invention provides an onium salt type monomer represented by the following formula (a).SELECTED DRAWING: None

The onium salt type monomer for a chemically amplified resist composition has excellent solvent solubility and a high sensitivity and contrast, and is excellent in lithographic performance such as exposure tolerance (EL), LWR, CDU and depth of focus (DOF), and excellent in resistance to pattern collapse and etch resistance even in fine pattern formation. The onium salt type monomer has the following formula (a).

The invention provides a transformer oil acetylene degassing-free detection method and system based on click chemistry, and relates to the technical field of gas detection analysis, a first product generated by a first click chemical reaction and a second product generated by a second click chemical reaction are used as catalysts to trigger a subsequent same cascade chemical amplification reaction, and the detection result is accurate. A single product molecule can catalytically hydrolyze a large number of acid-sensitive substrates, the conductivity of a mixed solution is obvious and can be measured and changed, accurate detection of acetylene with extremely low concentration is realized, and meanwhile, acetylene detection is calculated by utilizing a second click chemical reaction synchronously generated by an internal standard reagent and a triggering agent and independent of an acetylene concentration detection process, so that the accuracy of acetylene detection is improved. According to the method, the signal ratio is obtained by calculating the ratio of the first electric signal value to the second electric signal value instead of the single first electric signal value, interference factors are offset, online self-correction of acetylene detection is realized, and high consistency and accuracy of detection results under different times and different batches of reagents are ensured.

The present invention relates to a chemical amplification resist composition, a blank photomask, a resist pattern forming method, and a method for producing a polymer compound. The present invention aims to provide a chemical amplification resist composition that can satisfy good resolution, pattern shape, line edge roughness, and can suppress development residue defects that can become a cause of mask defects, and a resist pattern forming method using the same. The means for solving the problem is a chemical amplification resist composition characterized by containing: (A) a polymer compound containing one or two or more kinds of repeating units, and at least one or more kinds of repeating units among the repeating units being a repeating unit polymerized from 2 to 6 polymers of a residual oligomer of 1000 ppm or less of a polymerizable monomer.

The present application functions as a photoacid generator, and further provides a chemical amplification type photoresist composition by combining the photoacid generator with a resin whose solubility in a base is increased by the action of an acid generated by irradiation of active energy rays such as light or electron rays. The present application relates to an onium salt which is an onium salt represented by General Formula (1), wherein, of the two isomers of a facial isomer and a mer isomer in the anion structure, the proportion of the facial isomer is 15.0% by weight or less. 2 ) n+1 -E] + [(R 1 )3(F)3P] ‑ (1).

The invention discloses a sulfonyl imide salt photo-acid generator and an application of the sulfonyl imide salt photo-acid generator in a deep ultraviolet chemical amplification type photoresist. The structure of the photoacid generator is shown as a formula I, wherein R is an aromatic group. The sulfonimide salt is used as a photoacid generator and is mixed with polymer resin and a solvent to prepare the photoresist, and the photoetching effect is excellent. The excellent photoetching effect is based on that the sulfonyl imide salt anions contain aromatic groups, so that the intensity, boiling point and volume of the photogenerated acid can be further increased, and the volatilization and migration of the photogenerated acid are reduced, thereby reducing the line edge roughness; by introducing aromatic groups, the conjugation degree of the PAG can be improved, and the stability of the PAG is enhanced; the aromatic group can also change the polarity of the PAG and improve the solubility of the PAG in the photoresist, so that the PAG is more uniformly distributed in a photoresist system; the aromatic groups can also increase the C / H ratio of PAG, and improve the etching resistance of the photoresist. # imgabs0 #

The invention is applicable to the technical field of biological detection, and provides a method for detecting staphylococcus aureus based on combination of a screen-printed electrode and CRISPR / Cas13a, a probe containing a DNA / RNA hybrid chain is combined with a magnetic bead to form a simple composite structure, when the Cas13a recognizes 16sRNA of S. aureus, trans-cleavage activity can be immediately activated, the probe chain is rapidly cut off, the cut-off amount depends on the activated amount, and when the Cas13a recognizes 16sRNA of S. aureus, the Cas13a can be used for detecting staphylococcus aureus. And after transient magnetic separation, a result is observed on the screen-printed electrode. The method has ultrahigh specificity: the CRISPR / crRNA sequence ensures that staphylococcus aureus and other microorganisms can be accurately distinguished; the trans-cutting of Cas13a provides chemical amplification, and the magnetic separation purification greatly reduces background signals caused by non-specific adsorption, so that the signal-to-noise ratio and the sensitivity are remarkably improved.

The application discloses a kind of for mixed cresol separation continuous amplification production process and method, belong to mixed cresol separation and purification field.This process solves the problem of low flow, difficult to control, temperature-resistant equipment selection difficult in early stage working condition exploration, proposes the design concept of "breathing mouth".Further, a kind of "exogenous" online detection system can effectively avoid the influence of analysis results due to excessive flow temperature, excessive pressure, high concentration, reduce the complexity of structure design;For the problem of large amount of desorbent, an efficient desorbent extraction system is proposed, which can realize efficient recovery of desorbent and separation and purification of m-cresol product.The process and method are scientific and reasonable, and can realize continuous production, and have important role in mixed cresol separation amplification production.At the same time, it also has wide applicability in other chemical amplification production, separation and purification fields.

The application provides a KrF resin, a preparation method thereof and a chemical amplification photoresist, and relates to the field of semiconductors. The KrF resin has a general structure as follows: the preparation method of the KrF resin comprises the following steps: mixing raw materials including 4-acetyloxy styrene, a first monomer compound, a second monomer compound and an initiator, and performing a first reaction; then adding an ammonium acetate-water suspension into the system, and performing a second reaction to obtain the KrF resin; the first monomer compound is a compound comprising a high ultraviolet absorption group, and the second monomer compound is a compound comprising a low-activation-energy deprotection acidic group. The chemical amplification photoresist comprises the KrF resin. The KrF resin provided by the application has the characteristics of controllable UV absorption and low deprotection activation energy. The chemical amplification photoresist has the ability to obtain good developing pattern results under different transmittance requirements.

The present application provides a kind of chemical amplification positive photosensitive resin composition and its application, the chemical amplification positive photosensitive resin composition includes a first resin (A1), a second resin (A2), a photoacid generator (B), a solvent (C), a compound (D) shown in formula (6) or formula (7) and a hindered amine compound (E) shown in formula (e1), and the protective film prepared has the advantages of good sensitivity and stability over time.The present application is also about the protective film prepared by the chemical amplification positive photosensitive resin composition and the component comprising the protective film.

The invention relates to a chemically amplified positive resist composition and a resist pattern forming method. The present invention addresses the problem of providing, in optical lithography using high-energy rays, excellent solvent solubility and excellent lithography performance such as resolution, LER, and pattern shape, while preventing pattern collapse in the formation of fine patterns, and also providing a method for manufacturing the same. The present invention relates to a chemically amplified positive resist composition having excellent etching resistance, and a method for forming a pattern using the chemically amplified positive resist composition. The solution of the present invention is a chemically amplified positive resist composition comprising: a base polymer (A) which is a polymer having increased solubility in aqueous alkali due to the action of an acid, the present invention relates to a polymer which contains a repeating unit comprising an aromatic sulfonic acid anion represented by formula (A1-1) and a sulfonium cation represented by formula (A1-2), and a repeating unit represented by formula (A2), and which has increased solubility in aqueous alkali due to the action of an acid.

The invention provides a novel chemical amplification photoresist as well as a preparation method and a use method thereof. The novel chemical amplification photoresist comprises polymer resin containing a protecting group, a photoacid generator, an acid quenching agent and a solvent, wherein the photoacid generator comprises a first photoacid generator, and the first photoacid generator comprises at least one N-sulfonyloxy imide compound. According to the novel chemical amplification photoresist and the preparation method thereof, the N-sulfonyloxy imide compound is introduced as the first photoacid generator, so that the photoacid generation efficiency after exposure is obviously higher than that of a traditional photoacid generator, and when the novel chemical amplification photoresist is used for a substrate of which the surface is provided with a thin film layer which is slightly alkaline or rich in dangling bonds, the photoacid generation efficiency is obviously improved; the formation of residues or bottom feet at the bottom of a photoresist exposure area can be effectively inhibited, the influence on the resolution and morphology of a photoetching pattern is avoided, and the photoresist poisoning phenomenon can be prevented; and an additional surface treatment process does not need to be added, so that the substrate can be prevented from being damaged, and the process complexity and the process cost can be prevented from being increased.

The invention provides poly (p-hydroxystyrene) resin, a preparation method thereof and KrF photoresist, and relates to the technical field of photoresist. According to the poly (p-hydroxystyrene) resin provided by the invention, a specific amide derivative is introduced into a resin matrix, and the resin is mixed with other additives, so that a chemical amplification type photoresist composition which is suitable for different film thicknesses and has high resolution, high sensitivity and small edge roughness is formed. The KrF photoresist provided by the invention can provide good resolution and edge roughness in the application of the thick film photoresist, meanwhile, the sensitivity of the photoresist can be improved, the solubility of the photoresist after exposure and development is increased, and defects are reduced. Therefore, the problem of insufficient chip yield caused by pattern deviation in the subsequent ion implantation or etching process due to poor pattern morphology, large edge roughness and low resolution of the thick film photoresist is solved.

The invention provides a photoacid generator, a preparation method of the photoacid generator, a chemical amplification type photoresist and a preparation method of the chemical amplification type photoresist, and relates to the field of photoresist. The structural formula of the photoacid generator provided by the invention is shown in the specification, and the photoacid generator is sulfonium salt taking 5-tert-butyl-3-methyl-4-methylimidazo [1, 5-a] quinoline-3, 5-dicarboxylate as an acidic unstable group. The acidic unstable group is decomposed into an acid under high-energy radiation, the acidic unstable group is effectively decomposed into a carboxylic acid derivative and an imidazo [1, 5-a] quinoline derivative under the action of the acid and PDB (photolysis alkali), and the imidazo [1, 5-a] quinoline derivative can inhibit the diffusion rate of photoacid in the resist, so that the resistance of the resist is improved. Therefore, the dissolution rate of the photoresist in the developing solution after exposure is changed, and the problem of top loss after exposure and development of the photoresist is further solved.

The invention relates to an onium salt type monomer, a polymer, a chemically amplified resist composition and a pattern forming method. The present invention addresses the problem of providing: an onium salt-type monomer used in a chemically amplified resist composition which has excellent solvent solubility, high sensitivity, high contrast, excellent lithography performance such as exposure margin (EL), LWR, CDU, and depth of focus (DOF) in optical lithography using high-energy rays, and also has strong pattern collapse resistance and excellent etching resistance in fine pattern formation; a polymer comprising a repeating unit derived from the onium salt-type monomer; a chemically amplified resist composition comprising the polymer; and a pattern forming method using the chemically amplified resist composition. The solution of the present invention is an onium salt type monomer represented by formula (a). # imgabs0 #

The invention discloses a bifunctional molecular group structure for photoresist. The bifunctional molecular group structure comprises a linker, PAG molecules and PDQ molecules. And the linker contains a carbon-oxygen chemical bond or a carbon-nitrogen chemical bond. PAG molecules and PDQ molecules are synthesized on each linker at the same time, wherein the number of the PAG molecules and the number of the PDQ molecules are in proportion, and the total number of the PAG molecules and the PDQ molecules is three or more. And PAG molecules are synthesized on the linker through a carbon-oxygen chemical bond. PDQ molecules are synthesized on the linker through a carbon-nitrogen chemical bond. The invention also discloses a synthesis method of the bifunctional molecular group structure for the photoresist. The invention also discloses a use method of the photoresist adopting the bifunctional molecular group structure. According to the invention, the proportion of PAG molecules to PDQ molecules can be set, so that the uniformity of PAG and PDQ in the photoresist can be ensured, the uniformity and roughness of the line width of the photoresist can be ensured, and different requirements of users on the contrast ratio and light sensitivity of chemical amplification glue can be met at the same time.

The invention discloses positive chemical amplification photoresist resin, a preparation method and photoresist, the positive chemical amplification photoresist resin has a structural general formula shown in a formula (I), and the positive chemical amplification photoresist resin can be obtained by polymerizing styrene and derivatives thereof, acrylic acid and derivatives thereof through a Ni (II) catalyst. The positive chemical amplification photoresist resin prepared by the invention has the characteristics of controllable molecular weight and narrower molecular weight distribution; the photoresist containing the polymer resin can obviously improve the problems of unclear etching boundary and large line width roughness, and meets higher photoetching requirements.

The application discloses a kind of chemical amplification type positive photoresist and its application, belong to photoetching material technical field.The chemical amplification type positive photoresist includes following mass percentage of each component: polymer resin 5%-20%, photoacid generator 0.05%-1%, basic quencher 0.001%-0.05%, leveling agent 100ppm-1000ppm, solvent is remainder;Wherein the polymer resin includes first copolymer and second copolymer, the polymerized monomer of the first copolymer includes: polycyclic alkyl protected methacrylic ester, long-chain alkyl protected methacrylic ester, alpha-oxygen group protected methacrylic ester and methacrylic acid, the polymerized monomer of the second copolymer includes hydroxyl styrene, styrene and tert-butyl acrylate.By chemical amplification type positive photoresist as described above, the application can make chemical amplification type positive photoresist when using shorter wavelength light source, keep better resolution and higher contrast.

The invention relates to a sulfonium salt, a chemically amplified resist composition and a pattern forming method. The present invention provides a sulfonium salt represented by formula (1), a chemically amplified resist composition containing the sulfonium salt as a quencher, and a pattern forming method using the chemically amplified resist composition. In the formula, Z-represents an aromatic carboxylic acid anion which may have a substituent.

The invention belongs to the technical field of organic synthesis, and provides a method for continuously synthesizing a phosphorothioate compound, the preparation method can be completed only by pumping a compound of a formula (II) and a toluene solution of sulfur into a microchannel reactor and staying for 2-5 minutes, the reaction process is safe and easy to control, the engineering amplification is simple and efficient, and the yield is high. The common problems of success of a small test and failure of a pilot test in traditional chemical amplification are solved.

The present application provides a kind of chemical amplification positive photosensitive resin composition, protective film and assembly.The chemical amplification positive photosensitive resin composition includes resin (A), photoacid generator (B), solvent (C) and epoxy compound (D).The present application further includes the protective film prepared by using the chemical amplification positive photosensitive resin composition, and the assembly including the protective film.The protective film has good developing adhesion and chemical resistance, and can be applied to thin film transistor substrate flat film, interlayer insulating film or optical waveguide core material or cladding material.

The present invention relates to a chemically amplified positive resist composition and a resist pattern forming method. The present invention provides a chemically amplified positive resist composition which is excellent in solvent solubility, high in sensitivity, high in contrast, excellent in lithography properties such as resolution, LER, and the like, and in which development defects are still suppressed and etching resistance is also excellent at the time of fine pattern formation, and a pattern forming method using the same in optical lithography using high-energy rays. A chemically amplified positive resist composition comprising (A) a base polymer containing a polymer which contains a repeating unit represented by the following formula (A1) and whose solubility in an aqueous alkali solution increases due to acid action, and (B) a photo-acid generator composed of an onium salt represented by the following formula (B). In the formula, Z + is an onium cation, Ar AL is an acid-labile group-containing group represented by the following formula (AL), but at least one Ar AL and the carbon atom adjacent to the carbon atom bonded to -SO3 ‑ is bonded.

The invention relates to a monomer, a polymer, a chemically amplified resist composition and a pattern forming method. Provided are: a monomer that is a starting material for a polymer that is used in a chemically amplified resist composition having excellent solvent solubility in lithography using high-energy rays, high sensitivity, high contrast, and excellent lithography performance such as EL, LWR, CDU, and DOF, and excellent pattern shape; a polymer obtained using the monomer; a chemically amplified resist composition and a pattern forming method using the chemically amplified resist composition. A monomer represented by formula (A): A is a monomer represented by formula (B).

The invention relates to an onium salt monomer, a haplotype photoacid generator, a polymer, a chemically amplified resist composition and a pattern forming method. The present invention is an onium salt monomer represented by general formula (A). Therefore, the chemical amplification resist composition can exhibit excellent solvent solubility, high sensitivity and high acid diffusion inhibition performance, thereby exhibiting excellent photoetching performance. [In the formula, at least one of R1 and R2 located at the alpha position and / or beta position with respect to the SO3-group is a pentafluorothio group or the substituent-containing tetrafluorothio group. W and / or XL1 contains an aromatic ring. Z + represents a sulfonium cation represented by general formula (Z-1) or a cation represented by general formula (Z-2). ] [Chemical 2]

The invention discloses a chemical amplification type polyimide precursor and a photoresist composition prepared from the chemical amplification type polyimide precursor. The structure of the chemical amplification type polyimide precursor is shown as a general formula (1). The # imgabs0 # photoresist composition is prepared from the following raw materials in parts by weight: 8 to 50 parts of the chemical amplification type polyimide precursor, 0.025 to 2 parts of a photoacid generator, 0.01 to 5 parts of an additive and 40 to 91 parts of a solvent. According to the method, a chemical amplification technology is adopted, the dissolution contrast between the exposure area and the non-exposure area of the photoresist can be effectively improved, the contrast ratio is improved, so that the high resolution and the high film retention rate of the developing morphology are ensured, the chemical amplification adopts photoacid production, then acidolysis groups on the resin are catalyzed for deprotection, the efficiency is high, the precision is high, and the high sensitivity can be well considered.

This invention provides a chemically amplified positive photosensitive resin composition and its preparation method, as well as a microlens and its preparation method. The chemically amplified positive photosensitive resin composition comprises the following components: a first resin A, a second resin B, a photoacid generator C, a quencher D, and a solvent E. By designing the specific composition of the chemically amplified positive photosensitive resin composition, and through the synergistic effect of the first resin A and the second resin B with specific structures, this invention effectively reduces the Tg and reflow temperature of the first resin A and the second resin B, thereby lowering the reflow temperature for preparing microlenses using this chemically amplified positive photosensitive resin composition. This achieves the goal of preparing microlenses at low-temperature reflow (<100℃) and improves the contrast, resolution, and etching resistance of the microlenses.

The invention provides ester-containing tertiary amine, a preparation method thereof, a chemical amplification resist composition and application thereof, and relates to the technical field of photoresist. According to the preparation method of the ester-containing tertiary amine, provided by the invention, the acrylate and the substituted methylamine are subjected to the Michael addition reaction, and the reaction time for synthesizing the ester-containing tertiary amine is greatly shortened by adjusting the feeding proportion and the reaction temperature, controlling the solvent and adding the catalyst; and the high-purity crude product can be obtained only through simple post-treatment, the raw materials required by the reaction are easy to purchase, and the reaction device is simple and easy to operate, so that the method can be used for large-scale production, and the market blank of the ester-containing tertiary amine can be filled. In addition, the synthesis method provided by the invention shows excellent and wide substrate tolerance, and can continue to expand the structural library of the ester tertiary amine-containing compounds. The ester-containing tertiary amine provided by the invention can be used as an additive acid diffusion inhibitor to be added into a photoresist formula, so that the performance of the photoresist is remarkably improved.