89 results about "Post exposure" patented technology

The invention discloses an X-ray machine inspection parameter automatic configuration system for pet inspection, and relates to the technical field of medical imaging equipment, a displacement prediction model is used for pre-judging a pet convulsion state before exposure, a dynamic exposure trigger is only activated in a stable interval, and motion blur is avoided from the source; compared with the scheme of relying on post-exposure image feedback adjustment in the prior art, invalid radiation and repeated exposure operation can be avoided; the partition parameter mapping module is combined with a species feature database to map the gray level of the preview image into equivalent thickness and independently generate region parameters; aiming at extreme body type difference, such as an abdominal fat layer of an obese dog and a rib region of an emaciated cat, the system automatically distributes differentiated kV / mA parameters, and the problem of overexposure or underexposure caused by a traditional fixed penetration rate standard is eliminated; and the radiation fusing unit monitors the accumulated dose in real time, dynamically adjusts a safety threshold according to the weight of the pet, and stops exposure before the dose exceeds the limit.

The invention provides a method for monitoring the light leakage degree of an exposure machine, which comprises the following steps of: firstly, designing a special photomask with a shading area and a light-transmitting area which are arranged at intervals, then exposing a wafer coated with a photoresist layer for multiple times by using the special photomask according to a preset exposure condition, and then collecting the thickness of the photoresist layer in the shading area after each exposure to obtain the light leakage degree of the exposure machine. And finally, judging the light leakage severity of the exposure machine according to the exposure times and the thickness of the photoresist layer of the shading area collected after each exposure. According to the monitoring method provided by the invention, the severity of light leakage of the exposure machine can be timely and effectively monitored, the situation that the photoresist layer in the shading area is excessively thinned or even the dielectric layer is partially thinned, so that the subsequent etching process or ion implantation process is insufficiently withstood and the product is scrapped is avoided, and the production efficiency is improved. The effectiveness of monitoring and the smooth proceeding of the subsequent etching process or ion implantation process and the like are ensured, and the product yield is improved.

The present invention provides a layout correction method for improving the process window of a metal layer. A first corrected pattern after optical proximity correction of a pattern to be corrected is provided, and a first exposure profile thereof is obtained according to the first corrected pattern. An area where the line width in the first exposure profile does not meet the design standard is defined as a hot spot pattern; the first pattern is moved a partial distance to the side away from the third pattern to obtain a fourth pattern; the original pattern corresponding to the hot spot pattern is subjected to optical proximity correction according to the second to fourth patterns to obtain a second corrected pattern, and a second exposure profile thereof is obtained according to the second corrected pattern, so that the line width in the second corrected pattern meets the design standard, and the exposed profile after correction of the second pattern wraps the exposed profile after correction of the fourth pattern. The present invention increases the correction movement space of the hot spot line width of the metal layer and improves its process window, and does not cause the problem of insufficient wrapping area.

A method for forming a photoresist pattern includes: (i) a step of forming a photoresist film on a support using a photoresist composition; (ii) a step of exposing the photoresist film; and (iii) a step of developing the exposed photoresist film to form a photoresist pattern, characterized in that the photoresist composition contains: a resin (A) whose solubility in the developer changes due to the action of an acid, an acid-generating agent (B) that generates acid upon exposure, a photodegradable alkali (D1), a solvent (S), and a compound (X) represented by the following formula (x-1), wherein the amount of solvent remaining in the photoresist film formed in step (i) is 910 ppm or more, wherein R 1 ~R 4 It is a hydroxyl group or an alkyl group having 1 to 5 carbon atoms, R 5 and R 6 It is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or an alkyl group having 1 to 10 carbon atoms obtained by substitution with a hydroxyl group.

The invention discloses a laser imaging exposure machine, and belongs to the technical field of laser imaging exposure machines, the laser imaging exposure machine comprises a laser imaging exposure machine body, a first fixing plate and a second fixing plate, the first fixing plate and the second fixing plate are respectively arranged at two ends of the laser imaging exposure machine body, the first fixing plate is provided with a loosening assembly, and the second fixing plate is provided with a clamping assembly. A winding assembly is mounted on the second fixing plate, and the flexible base material is loosened by the loosening assembly, exposed by the laser imaging exposure machine body and stored by the winding assembly; through the design of the arc-shaped plate and the adjusting plate, the tensioning wheel is matched, the curved surface of the flexible base material can be attached in a self-adaptive mode, the curved surface of the flexible base material is cleaned, when the tensioning wheel adjusts the tightness degree of the flexible base material, the adjusting plate can adjust the position so as to be matched with the adjusted curved surface of the flexible base material, and the cleaning effect is better provided.

A method and apparatus for performing post-exposure bake operations is described herein. After exposure of photoresist on a substrate, the substrate is heated during a baking process to facilitate protection of the resist. The baking process is performed in a vacuum environment at sub-atmospheric pressures. After baking at reduced pressure, the substrate is cooled. The cooling process is performed at sub-atmospheric pressures. Further development of the resist is performed at ambient pressures.

The invention discloses an exposure dose determination method, device and equipment and a storage medium, which are applied to the technical field of photoetching, and the method comprises the following steps: obtaining a target critical size and a line width drift tolerance limit between an exposure pattern formed after photoresist exposure and an etched functional layer pattern; obtaining an exposure dose slope; the exposure dose slope is a slope value determined based on the critical dimensions of the corresponding exposure patterns under different exposure doses; determining an exposure dose step length according to the line width drift tolerance limit and the exposure dose slope; and determining a target exposure dose corresponding to the target key size according to the exposure dose step length. The exposure dose step length is calculated based on the line width drift tolerance limit between the exposure pattern formed after exposure and the functional layer pattern formed after etching, so that the target exposure dose can ensure that the line width drift between the exposure pattern formed after exposure and the functional layer pattern formed after etching meets the requirement; therefore, the process window loss can be reduced.

The invention provides a photomask and an alignment method, and relates to the technical field of semiconductors. The photomask comprises N sub-photomasks, and exposure areas formed after the N sub-photomasks are sequentially exposed are adjacently arranged according to a preset mode; wherein two sub-photomasks in the N sub-photomasks are respectively a first sub-photomask and a second sub-photomask, an exposure area corresponding to the first sub-photomask is adjacent to an exposure area corresponding to the second sub-photomask, M first mask identifiers are arranged on the first sub-photomask, and M second mask identifiers are arranged on the second sub-photomask, the M first mask identifiers are in one-to-one correspondence with the M second mask identifiers, the corresponding first mask identifiers and second mask identifiers jointly form a complete identifier pattern, and the identifier pattern is located in a chip area of the photomask. According to the invention, the alignment deviation between two times of exposure can be captured through the pattern formed after exposure of the first mask mark on the first sub-photomask and the second mask mark on the second sub-photomask, so that the alignment precision is improved.

The invention relates to a seamless splicing grating, in particular to a method for manufacturing a seamless splicing grating based on a dynamic straight-edge diaphragm, which comprises the following steps of: aligning the edge of the dynamic straight-edge diaphragm with a splicing seam position mark on one side of a substrate, performing simple harmonic motion on the dynamic straight-edge diaphragm along the direction vertical to the splicing seam, realizing dynamic scanning and completing first interference exposure; the edge of the dynamic straight-edge diaphragm is aligned with the abutted seam position mark on the other side of the substrate, stripe locking is carried out by utilizing the grating latent image reserved by the first exposure, so that the dynamic straight-edge diaphragm carries out simple harmonic motion in the direction perpendicular to the abutted seam, dynamic scanning is realized, and second interference exposure is completed; carrying out unified development on the exposed substrate to obtain a photoresist grating mask without splicing seams, and transferring a grating structure on the mask to a dielectric substrate; according to the technical scheme, the defects that in the prior art, due to abutted seam modulation, the laser damage resistance is poor, and the machining difficulty is large can be effectively overcome.

The invention provides a photomask defect repairing method, which relates to the technical field of semiconductors, and comprises the following steps: firstly, determining the position of a defect on a photomask; then, forming a glue blocking layer on the surface of the defect, and covering the defect with the glue blocking layer; thirdly, a photoresist layer is formed, the photoresist layer is distributed around the photoresist blocking layer, and non-adhesion exists between the photoresist layer and the photoresist blocking layer; then, the photoresist layer is used as a mask, and the photoresist layer and the defects are etched so as to remove the photoresist layer and the defects; due to the fact that the photoresist layer and the photoresist blocking layer have non-adhesion, in the process of forming the photoresist layer, the photoresist layer cannot be formed on the surface of the photoresist blocking layer, the photoresist layer is formed around the photoresist blocking layer, and after the photoresist layer is formed, the photoresist layer can be directly used as a mask to etch the photoresist blocking layer and the defects, so that the photoresist blocking layer and the defects are removed, and the yield of the product is improved. The photomask repairing process is simplified, secondary exposure and baking and developing processes after exposure on the photomask are avoided, the photomask repairing period is shortened, and the repairing precision is improved.

Chemically amplified (CA) positive resist compositions are described which are comprised of the following solid components: Component (1) a PAG having structure (I); Component (2) a hydroxybenzoic acid having structure (II); Component (3) a trialkyl amine quencher having structure (III); Component (4) an adhesion promoter which is an aryl-1H-tetrazole-5-thiol derivative having structure (IV); Component (5) a polymer comprising a reaction product formed by reacting without acid catalyst, (i) a Novolak; (ii) a polymer comprising hydroxystyrene and methacrylate and / or methacrylate protected by a high activation energy acid labile group, and a vinyl ether or a heteroalicylic; Component (6) a polymer comprising structure (V); and Component (7) a Novolak polymer. Also described, is the use of these resist composition in a method for forming a photoresist relief image on a substrate.

The present invention discloses a method and device for measuring the center offset of an objective lens in a lithography apparatus. The measurement method includes: aligning the center of a preset pattern on a mask plate with the center of the objective lens; wherein, the preset pattern is a centrosymmetric figure; placing a substrate to be exposed on a moving stage, and aligning the center of the moving stage with the theoretical projection center of the objective lens; moving the substrate to expose a preset area to be exposed on the substrate; wherein, the preset area to be exposed is centrosymmetric and includes at least four sub-areas to be exposed having the same distance from the center of the moving stage; obtaining the final actual image of the exposed substrate, and obtaining the corresponding final theoretical image after the substrate is exposed; performing correlation matching between the region of interest of the final theoretical image and the final actual image to calculate the center offset; wherein, the region of interest includes at least part of the final theoretical image corresponding to the preset area to be exposed. The present invention can improve the measurement accuracy of the center offset.

The invention discloses a method for improving photoetching line roughness. The method comprises the following steps: S1, providing a plurality of product sheets before a photoetching process, wherein the number of the product sheets is at least three; s2, gluing is conducted, multiple gluing pieces are obtained, multiple pre-baking temperatures are set for multiple product pieces, the multiple pre-baking temperatures are sequentially decreased or increased, and the other pre-baking parameters are the same; s3, exposure: exposing the plurality of glued sheets under the same exposure condition to obtain a plurality of exposed sheets; s4, developing: developing the plurality of exposed exposure sheets under the same developing condition to obtain a plurality of developing sheets; and S5, observing the line roughness, determining the influence of the prebaking temperature on the line roughness, and determining the optimized parameters and the optimized process of batch production of the photoetching process. Therefore, the optimization direction is broadened for improving the photoetching line roughness, the optimization parameters of the photoetching line roughness can be determined, and an optimization process can be provided for batch production of the photoetching process.

A method of fabricating a semiconductor device includes providing a first substrate and forming a resist layer over the first substrate. In some embodiments, the method further includes performing an exposure process to the resist layer. The exposure process includes exposing the resist layer to a radiation source through an intervening mask. In some examples, the intervening mask includes a second substrate, a multi-layer structure formed over the second substrate, a capping layer formed over the multi-layer structure, and an absorber layer disposed over the capping layer. In some embodiments, the absorber layer includes a first main pattern area and an opening area spaced a distance from the first main pattern area. In various examples, the method further includes, after performing the exposure process, developing the exposed resist layer to form a patterned resist layer.

The present disclosure provides a method for obtaining high-resolution patterns by using different illumination modes, and relates to the field of photolithography technology, and the method comprises the following steps: forming a negative photosensitive film layer, a positive photosensitive film layer and a metal enhancement layer which are sequentially stacked on a substrate; using a first illumination mode, exposing the positive photosensitive film layer based on a mask plate; using a second illumination mode, exposing the negative photosensitive film layer based on the mask plate; the illumination wavelengths of the first illumination mode and the second illumination mode are the same, and the first focal depth of the first illumination mode is different from the second focal depth of the second illumination mode; sequentially developing the exposed positive photosensitive film layer and the exposed negative photosensitive film layer to obtain pattern structures generated by twice exposure; and transferring the pattern structures generated by twice exposure to the substrate to obtain high-resolution patterns.

The application relates to a free curved surface random metal texture manufacturing method, which comprises the following steps: forming a photoresist film on a water-drop-shaped free curved surface substrate after ultrasonic cleaning; determining pre-prepared texture pattern information, obtaining visual image information of the water-drop-shaped free curved surface substrate after baking and solidifying the photoresist, analyzing the visual image information and the pre-prepared texture pattern information, determining a laser motion track, and using the laser motion track to control the laser to perform an exposure operation on the water-drop-shaped free curved surface substrate after baking and solidifying the photoresist according to the pre-prepared texture pattern information; developing the water-drop-shaped free curved surface substrate after exposure; performing vacuum evaporation film plating on the water-drop-shaped free curved surface substrate after development; removing the photoresist on the water-drop-shaped free curved surface substrate after film plating; and using a high-precision visual system and a pre-programmed spatial outward expansion curved surface track to ensure that the laser is accurately exposed according to the pre-prepared texture pattern information, so that the deviation problem caused by insufficient repeated precision is reduced.

1. Name of the Design Product: Graphical User Interface for Imaging Control of Electronic Devices. 2. Use of the Design Product: An electronic device. 3. Design Key Points of the Design Product: Lies in the graphical user interface. 4. Picture or Photograph that Best Illustrates the Design Key Points: Front View. 5. Use of the Graphical User Interface: For controlling X-ray imaging devices. 6. Human-Machine Interaction Method of the Graphical User Interface: Clicking on icons, text selection boxes, etc. in the interface can perform corresponding operations. The front view is the main interface; clicking on the "Exposure" text selection box at the bottom of the main view interface switches from the front view to the interface change state diagram 1; clicking on the "Digital Subtraction" icon on the right side of the interface change state diagram 1 switches from the interface change state diagram 1 to the interface change state diagram 2; after starting the exposure, it automatically switches from the interface change state diagram 2 to the interface change state diagram 3; after continuously exposing until the parameters are stable, it automatically switches from the interface change state diagram 3 to the interface change state diagram 4; after the exposure and image acquisition are completed, it automatically switches from the interface change state diagram 4 to the interface change state diagram 5; clicking on the drop-down icon in the upper left corner of the interface change state diagram 5 switches from the interface change state diagram 5 to the interface change state diagram 6.

The invention provides a pattern alignment precision control method, etching equipment and a storage medium, and the method comprises the steps: forming photoresist on the surface of a to-be-etched structure, the photoresist comprising a first actual pattern after actual exposure; obtaining an ideal pattern of the photoresist after ideal exposure, determining a first deviation distance and a first deviation direction from a first actual center position of the first actual pattern to an ideal center position of the ideal pattern, and etching the photoresist for at least the first deviation distance along the first deviation direction to obtain a second actual pattern, the second actual graph at least comprises an ideal central position, namely, the alignment deviation data of the first actual graph is determined by utilizing the ideal graph after ideal exposure, and then the first actual graph is modified by utilizing the alignment deviation data, so that the alignment deviation of the second actual graph obtained after modification and the ideal graph is reduced; therefore, the alignment precision of the pattern is controlled, and the yield of the semiconductor device is improved.

Embodiments of the present application provide a mask and a design method thereof. In the mask provided by the embodiments of the present application, for a pattern array including at least two target patterns, since each corner of each target pattern is provided with at least one second auxiliary pattern having an acute angle or an obtuse angle with a straight line on which a side of the second auxiliary pattern lies, and a distance between the second auxiliary pattern and an adjacent corner is less than a distance between a first auxiliary pattern and an adjacent side, the arrangement density of the auxiliary patterns near the corner can be improved, so that the light intensity distribution near the corner of the target pattern in the exposure process can be improved, the degree of rounding of the corner can be reduced, and the matching degree of a pattern formed by a photoresist layer after exposure and the target pattern can be improved. Meanwhile, the arrangement density of the auxiliary patterns in the periphery of each target pattern can be increased, the focusing depth in the exposure process can be increased, and the matching degree of the pattern formed by the photoresist layer after exposure and the target pattern can be further improved.

The invention provides a direct drawing apparatus and a direct drawing method, which can continue exposure even if an optical modulation element has a failure. The direct drawing device includes: an optical modulation element having a plurality of elements arranged in correspondence with a sub-scanning direction, and for modulating light of a light source; and an exposure head for exposing the substrate with the light modulated by the optical modulation element, the control unit relatively moving the exposure head in the main scanning direction so as to expose the sub-exposure region with the light modulated by the selection element, and after the sub-exposure region is exposed, the exposure head moves the sub-exposure region with the light modulated by the selection element. The exposure head is relatively moved in the sub-scanning direction by an amount corresponding to the sub-exposure width.

The invention discloses a method for improving a gluing arrow shadow. The method comprises the following steps: S1, providing a plurality of product sheets before a photoetching process, wherein the number of the product sheets is at least three; s2, gluing is conducted, specifically, gluing is conducted under the same gluing condition, so that a plurality of gluing pieces are obtained; s3, exposure: exposing the plurality of glued sheets by using layouts with different line width sizes, and enabling other exposure conditions to be the same so as to obtain a plurality of exposure sheets; s4, developing: developing the plurality of exposed exposure sheets under the same developing condition to obtain a plurality of developing sheets; and S5, forming a finished product from each display sheet through a subsequent process, testing the finished product, observing a display image at a test end, determining the influence of different line width sizes of the layout on the arrow shadow, and determining optimized parameters and an optimized process of batch production of the photoetching process. Therefore, the arrow shadow defect can be effectively improved.

This application relates to a lens defect detection method, apparatus, and semiconductor structure fabrication method. The lens defect detection method of this application includes: providing a wafer; the wafer including multiple exposure areas; exposing each of the exposure areas, wherein at least two different exposure energies are used during the multiple exposures; after the multiple exposures, determining whether the lens has a defect based on whether spots appear in each of the exposure areas; if spots appear in the exposure areas, then the lens is determined to have a defect. The lens defect detection method provided by this application, by exposing the same wafer with different exposure energies, can detect less obvious defects on the lens, exhibiting high sensitivity; moreover, the detection process is simple and easy to implement.

The application provides a method for improving optical proximity correction line end convergence, providing a target pattern, forming a to-be-corrected pattern at the contour edge of the target pattern, obtaining a first post-exposure contour according to the to-be-corrected pattern, and the first post-exposure contour has a first edge placement error with the target pattern; setting a first negative feedback coefficient and a first feedback value of each line segment according to the first edge placement error; introducing the first feedback coefficient and the first feedback value into an optical proximity correction program, moving the corresponding line segment by using the first feedback coefficient and the first feedback value, obtaining a second correction pattern, so that a second edge placement error of the second correction pattern is less than a set threshold; and iterating the second correction pattern by using the optical proximity correction program. The feedback value is set in the first step of the line end correction of the to-be-corrected ion implantation layout by the application, so that in the first step of the correction, the moving distance of the line segment is avoided to be too large, and the line end contour of the final correction pattern is as possible as to conform to the target.

The utility model discloses an exposure device which comprises a frame body, a light source, an adjusting assembly, a first dimming piece, a second dimming piece, a holographic plate and a lens assembly, and the light source is arranged on the frame body; the adjusting assembly is provided with an incident end opposite to the light source, and the adjusting assembly is further provided with a light splitting structure; the adjusting assembly is provided with a first emergent end and a second emergent end; the lens assembly is arranged in the light beam emitting direction of the first dimming piece or the second dimming piece. Through the design, one of the two beams of light participating in exposure can be converted into non-parallel light through the lens assembly, and after the two beams of light interfere with each other to expose the holographic dry plate, the coupling-out grating of which the coupling-out light is non-parallel light and the optical waveguide sheet adopting the coupling-out grating can be manufactured. The light enters the human eyes in a divergent state, and according to the visual imaging principle of the human eyes, the visual effect of close-range display can be formed, so that the optical waveguide sheet adopting the coupling-out grating has the function of close-range display.

To improve exposure quality in a direct-writing exposure apparatus by allowing adequate dust removal even in cases where a substrate or a stage has surface unevenness.SOLUTION: In a direct-writing exposure apparatus, exposure is performed when a substrate W passes through an irradiation area irradiated with light of an exposure pattern by each exposure head 1 including a spatial light modulator 3 while a stage 6 on which the substrate W is placed is moved by a stage moving mechanism 61, and after a predetermined number of exposures, a main sequence program 72 moves the stage 6 in a state where the substrate W is not placed thereon, negative pressure from a suction source 82 acts on a slit 810 of a nozzle 81 held with a distance d within a range of 0.5 mm to 3 mm by a nozzle position adjusting mechanism 83 to perform suction, and dust P adhering to grooves 601 and holes 602 of the stage 6 is sucked and removed.SELECTED DRAWING: Figure 7

The clamping plug for photoetching exposure provided by the utility model comprises a first side plate and a second side plate, a connecting plate is arranged between the first side plate and the second side plate, the first side plate, the second side plate and the connecting plate define an installation space for accommodating a film source, a cover plate is arranged above the installation space, and the cover plate is connected with the first side plate and the second side plate. And the cover plate is connected with the first side plate and the second side plate and completely covers the mounting space. The clamping plug for photoetching exposure provided by the utility model can solve the problem that a film source to be exposed and after exposure is repeatedly exposed.

The invention discloses a timestamp synchronization method, device and equipment of an all-round parking system and a storage medium, and relates to the technical field of vehicle parking, and the method comprises the steps that a deserializer triggers a camera module through GPIO to carry out exposure, obtains a system timestamp to obtain an exposure timestamp, and pushes the exposure timestamp to a created timestamp FIFO to be stored; based on image data output after exposure of the camera module, synthesizing a panorama through a splicing algorithm, and generating a view angle conversion graph through view angle conversion; and creating a buffer according to the resolution and the image format of the panorama and the view angle conversion diagram, and writing the exposure timestamp in the timestamp FIFO, the panorama and the view angle conversion diagram into the buffer. According to the invention, strict synchronization of the image and the timestamp can be ensured, the performance of the all-round parking system is improved, and the identification accuracy of the parking space position is improved.

The invention discloses a double-layer photoetching method for a semiconductor device with a deep groove structure, which comprises the following steps of: forming an effect of filling photoresist in a deep groove through a first photoetching process, and continuously performing a second photoetching process on the basis to form a specific etching pattern; and finally, taking the etching pattern formed by the secondary photoetching process as a main etching mask, taking the photoresist in the primary photoetching process as an auxiliary mask and support, and carrying out graphical transfer on a device below. According to the method, two layers of photoresist are arranged on a wafer substrate according to the characteristics that positive photoresist is insoluble in a developing solution before exposure and can be dissolved in the developing solution after exposure and the characteristics that negative photoresist is dissolved in the developing solution before exposure and cannot be dissolved in the developing solution after exposure, and the photoresist close to the wafer substrate is used for supporting; and the other layer of photoresist is used for limiting an etching area. By controlling the optical characteristics (different refractive indexes and absorbance) of the double-layer photoresist, the morphology of the side surface of the groove is improved, the morphology of the photoresist layer is optimized, and the critical dimension deviation is reduced.

The invention discloses a preparation method of a microlens array. The preparation method comprises the following steps: providing a plain film substrate; forming a photoresist layer on the plain film substrate; determining a target parameter of the micro-lens array according to the light emitting parameter of the chip to be matched, and further determining a preset exposure pattern of the micro-lens array; controlling the exposure dose of each point on the photoresist layer through a digital micromirror device according to a preset exposure pattern corresponding to the microlens array, and exposing the photoresist layer; developing the exposed photoresist layer to obtain a plurality of first photoresist structures; and taking the first photoresist structure as a mask, and etching the first photoresist structure and the plain film substrate by using an etching process to form the micro-lens array. According to the invention, when the light emitting parameter of the chip to be matched is changed, the microlens array matched with the chip to be matched can be obtained only by changing the preset exposure pattern used by the digital micromirror device, so that the subsequent coupling loss is remarkably reduced.

The invention discloses a method for improving imaging pocking marks. The method comprises the following steps: S1, providing two product sheets before a photoetching process; s2, gluing is conducted, specifically, gluing is conducted under the same gluing condition, and two gluing pieces are obtained; s3, exposing, namely exposing the two glued sheets by adopting a layout of a wafer formed by a plurality of distributed crystal grains to obtain two exposed sheets, setting different NA values for the two glued sheets, and enabling other exposure parameters to be the same; s4, developing, namely developing the two exposed sheets under the same developing condition to obtain two developing sheets; and S5, forming a finished product from each display sheet through a subsequent process, testing the finished product, observing a display image of a test end, determining the influence of different NA values on the pocking marks of the display image, and determining optimization parameters and an optimization process of batch production of the photoetching process. Therefore, the imaging pocking marks can be improved.