157 results about "Post exposure" patented technology

The invention discloses a preparation method of novel AG (anti-glare) glass. The preparation method comprises the following steps: carrying out surface treatment on a glass substrate; uniformly coating a functional coating on the surface of the glass substrate; uniformly coating photoresist on the surface of the functional coating, and performing soft baking treatment after coating; carrying out graphic design and exposure by adopting a high-precision MASK, and accurately transferring a designed microstructure pattern to the photoresist layer; carrying out developing treatment after exposure, removing the unexposed photoresist part, and forming a predetermined pattern on the glass substrate; the developed photoresist pattern is cured to ensure that the photoresist pattern has enough corrosion resistance and stability in the subsequent etching process; carrying out etching treatment, and removing the unprotected functional coating and the glass substrate to form an accurate microstructure pattern; removing the residual photoresist by using a photoresist removal technology to obtain a final microstructure pattern; and the surface of the microstructure pattern is subjected to functionalization treatment through fluorination treatment, so that the microstructure pattern has anti-glare and anti-fouling properties.

The invention discloses a sensor external trigger control method and system and a medium, and the control method comprises the steps: receiving an external trigger signal, and controlling a sensor to start the reading work of all pixel lines in sequence after the generation of line synchronization signals with the number corresponding to a first preset value; obtaining pixel line reading time, so that line-by-line exposure is started after reading of the first pixel line is completed; after the pixel row at the position corresponding to the second preset value is opened to be exposed, stopping driving the next pixel row to be exposed; receiving a new external trigger signal, and continuing to drive the next pixel row to perform exposure, so that the sensor is controlled to start reading work of all pixel rows in sequence after the row synchronization signals with the number corresponding to the first preset value are generated, and image information in a normal area of the sensor is obtained according to preset exposure time. According to the invention, no jitter of the exposure time can be realized under the condition that the external trigger period time is not determined, the maximum frame rate can be reached in the external trigger mode, and the settable exposure time range is improved.

The invention discloses an image processing method and device, equipment and a medium, and the method comprises the steps: obtaining a short-exposure image and a long-exposure image of a camera module in a shooting process, and enabling the long-exposure image to be an image obtained through the continuous exposure on the basis of the short-exposure image; determining a first R / G value and a first B / G value of the short exposure image, and determining a second R / G value and a second B / G value of the long exposure image; determining a first gain of the short exposure image according to the first R / G value and the first B / G value, and determining a second gain of the long exposure image according to the second R / G value and the second B / G value; mixing the first gain and the second gain according to a preset proportion, and determining a target gain; and performing white balance reduction on the long exposure image according to the target gain to obtain a target image. According to the invention, the long exposure gain and the short exposure gain are mixed for white balance reduction, so that the reduction effect of white balance is greatly improved, and the color cast degree of a highlight area is greatly reduced.

The invention discloses an X-ray machine inspection parameter automatic configuration system for pet inspection, and relates to the technical field of medical imaging equipment, a displacement prediction model is used for pre-judging a pet convulsion state before exposure, a dynamic exposure trigger is only activated in a stable interval, and motion blur is avoided from the source; compared with the scheme of relying on post-exposure image feedback adjustment in the prior art, invalid radiation and repeated exposure operation can be avoided; the partition parameter mapping module is combined with a species feature database to map the gray level of the preview image into equivalent thickness and independently generate region parameters; aiming at extreme body type difference, such as an abdominal fat layer of an obese dog and a rib region of an emaciated cat, the system automatically distributes differentiated kV / mA parameters, and the problem of overexposure or underexposure caused by a traditional fixed penetration rate standard is eliminated; and the radiation fusing unit monitors the accumulated dose in real time, dynamically adjusts a safety threshold according to the weight of the pet, and stops exposure before the dose exceeds the limit.

The invention provides a photoetching method based on a full-transparent substrate, and relates to the technical field of semiconductors. When the method is executed, firstly, an aluminum layer is deposited on the surface of a full-transparent substrate, then, photoresist is uniformly distributed on the surface of the aluminum layer, then, the position of the surface of the full-transparent substrate is determined according to the aluminum layer, then, the photoresist is exposed according to the position of the surface of the full-transparent substrate, and finally, the exposed photoresist is developed. Therefore, by depositing the aluminum layer on the surface of the full-transparent substrate, the light intensity of the reflected signal can be enhanced when the surface of the full-transparent substrate is subjected to a photoetching process, so that a sensor for receiving light rays can smoothly and accurately distinguish the reflected signal and accurately determine the position of the surface of the full-transparent substrate; and thus, automatic photoetching based on the full-transparent substrate is realized.

A substrate processing method includes: performing a first post-exposure baking process on a photoresist layer that was previously exposed to for extreme ultraviolet (EUV) exposed to EUV; developing the photoresist layer using a first developing solution having a first temperature; performing a second post-exposure baking process on the photoresist layer; developing the photoresist layer using a second developing solution having a second temperature, higher than the first temperature; and forming a photoresist pattern by performing a hard baking process on the photoresist layer.

The invention provides an image exposure method and related equipment. In the method, the photometric strategy matched with the current scene is re-determined through the exposure value deviation of the current scene, so that more accurate photometric information is obtained, and after the photometric information is used for performing exposure processing on the image, the image with more appropriate brightness and better imaging quality is obtained, and the situation of large-area overexposure of the image is reduced. Specifically, as the exposure value deviation is used for measuring the difference between the exposure quantity required to be adopted when accurate exposure is carried out on a target image and the current exposure quantity, the larger the exposure value deviation is, the larger the possibility of inaccurate exposure (such as large-area overexposure) after exposure is carried out according to the current exposure quantity is, and the larger the exposure value deviation is, the larger the possibility of inaccurate exposure (such as large-area overexposure) is. At the moment, the photometry strategy should be adjusted in time to obtain more accurate exposure parameters and improve the final imaging quality.

The invention provides a method for adjusting a photoresist angle in a photoetching process and a preparation method of a silicon carbide chip, and the method comprises the following steps: adopting a photoetching machine to continuously carry out N times of exposure on photoresist, N is greater than or equal to 2, a step-shaped photosensitive area is obtained, the step shape is divided into a plurality of sections from top to bottom, and the width of each section is sequentially reduced from top to bottom; carrying out developing treatment to form a step-shaped photoresist pattern; the photoresist pattern is baked at a preset temperature, so that the photoresist pattern forms an arc-shaped side wall, and the preset temperature is at least the glass transition temperature of the photoresist. According to the method, the photoresist is continuously exposed for multiple times and then is developed, the angle of the photoresist side wall is greatly adjusted in combination with the baking process, and the inclined photoresist pattern side wall can be obtained.

The invention provides a method for monitoring the light leakage degree of an exposure machine, which comprises the following steps of: firstly, designing a special photomask with a shading area and a light-transmitting area which are arranged at intervals, then exposing a wafer coated with a photoresist layer for multiple times by using the special photomask according to a preset exposure condition, and then collecting the thickness of the photoresist layer in the shading area after each exposure to obtain the light leakage degree of the exposure machine. And finally, judging the light leakage severity of the exposure machine according to the exposure times and the thickness of the photoresist layer of the shading area collected after each exposure. According to the monitoring method provided by the invention, the severity of light leakage of the exposure machine can be timely and effectively monitored, the situation that the photoresist layer in the shading area is excessively thinned or even the dielectric layer is partially thinned, so that the subsequent etching process or ion implantation process is insufficiently withstood and the product is scrapped is avoided, and the production efficiency is improved. The effectiveness of monitoring and the smooth proceeding of the subsequent etching process or ion implantation process and the like are ensured, and the product yield is improved.

The present invention provides a layout correction method for improving the process window of a metal layer. A first corrected pattern after optical proximity correction of a pattern to be corrected is provided, and a first exposure profile thereof is obtained according to the first corrected pattern. An area where the line width in the first exposure profile does not meet the design standard is defined as a hot spot pattern; the first pattern is moved a partial distance to the side away from the third pattern to obtain a fourth pattern; the original pattern corresponding to the hot spot pattern is subjected to optical proximity correction according to the second to fourth patterns to obtain a second corrected pattern, and a second exposure profile thereof is obtained according to the second corrected pattern, so that the line width in the second corrected pattern meets the design standard, and the exposed profile after correction of the second pattern wraps the exposed profile after correction of the fourth pattern. The present invention increases the correction movement space of the hot spot line width of the metal layer and improves its process window, and does not cause the problem of insufficient wrapping area.

A method for forming a photoresist pattern includes: (i) a step of forming a photoresist film on a support using a photoresist composition; (ii) a step of exposing the photoresist film; and (iii) a step of developing the exposed photoresist film to form a photoresist pattern, characterized in that the photoresist composition contains: a resin (A) whose solubility in the developer changes due to the action of an acid, an acid-generating agent (B) that generates acid upon exposure, a photodegradable alkali (D1), a solvent (S), and a compound (X) represented by the following formula (x-1), wherein the amount of solvent remaining in the photoresist film formed in step (i) is 910 ppm or more, wherein R 1 ~R 4 It is a hydroxyl group or an alkyl group having 1 to 5 carbon atoms, R 5 and R 6 It is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or an alkyl group having 1 to 10 carbon atoms obtained by substitution with a hydroxyl group.

The invention discloses a laser imaging exposure machine, and belongs to the technical field of laser imaging exposure machines, the laser imaging exposure machine comprises a laser imaging exposure machine body, a first fixing plate and a second fixing plate, the first fixing plate and the second fixing plate are respectively arranged at two ends of the laser imaging exposure machine body, the first fixing plate is provided with a loosening assembly, and the second fixing plate is provided with a clamping assembly. A winding assembly is mounted on the second fixing plate, and the flexible base material is loosened by the loosening assembly, exposed by the laser imaging exposure machine body and stored by the winding assembly; through the design of the arc-shaped plate and the adjusting plate, the tensioning wheel is matched, the curved surface of the flexible base material can be attached in a self-adaptive mode, the curved surface of the flexible base material is cleaned, when the tensioning wheel adjusts the tightness degree of the flexible base material, the adjusting plate can adjust the position so as to be matched with the adjusted curved surface of the flexible base material, and the cleaning effect is better provided.

The invention discloses a high-order lens manufacturing method and a high-order lens, which are characterized in that common ultraviolet lithography equipment is utilized, and according to the performance that molecular chains among molecules of positive photoresist after exposure are unlinked, the binding force among the molecules of the positive photoresist in an exposure area and a non-exposure area is different, so that the high-order lens is manufactured. The positive photoresist is subjected to exposure treatment with different depth sizes for multiple times, then the high-order concave lens is directly formed by utilizing the contraction force in the backflow process of the exposure area of the positive photoresist, and the high-order concave lens is formed by controlling the exposure dose and the exposure depth and selecting the performance of the positive photoresist under the condition of no high-expansion positive photoresist. The ultra-low concave lens (the angle is less than 3 degrees) is formed, so that high-order ultra-low concave lenses can be manufactured in batches, pattern transfer can be carried out through a nanoimprint technology and an etching technology, and high-order ultra-low convex lenses (the angle is less than 3 degrees) can be manufactured in batches. The technical scheme of the invention can be widely applied to the fields of various micro-nano processing, integrated circuits and optical devices.

A method and apparatus for performing post-exposure bake operations is described herein. After exposure of photoresist on a substrate, the substrate is heated during a baking process to facilitate protection of the resist. The baking process is performed in a vacuum environment at sub-atmospheric pressures. After baking at reduced pressure, the substrate is cooled. The cooling process is performed at sub-atmospheric pressures. Further development of the resist is performed at ambient pressures.

The invention discloses an exposure dose determination method, device and equipment and a storage medium, which are applied to the technical field of photoetching, and the method comprises the following steps: obtaining a target critical size and a line width drift tolerance limit between an exposure pattern formed after photoresist exposure and an etched functional layer pattern; obtaining an exposure dose slope; the exposure dose slope is a slope value determined based on the critical dimensions of the corresponding exposure patterns under different exposure doses; determining an exposure dose step length according to the line width drift tolerance limit and the exposure dose slope; and determining a target exposure dose corresponding to the target key size according to the exposure dose step length. The exposure dose step length is calculated based on the line width drift tolerance limit between the exposure pattern formed after exposure and the functional layer pattern formed after etching, so that the target exposure dose can ensure that the line width drift between the exposure pattern formed after exposure and the functional layer pattern formed after etching meets the requirement; therefore, the process window loss can be reduced.

The invention provides a photomask and an alignment method, and relates to the technical field of semiconductors. The photomask comprises N sub-photomasks, and exposure areas formed after the N sub-photomasks are sequentially exposed are adjacently arranged according to a preset mode; wherein two sub-photomasks in the N sub-photomasks are respectively a first sub-photomask and a second sub-photomask, an exposure area corresponding to the first sub-photomask is adjacent to an exposure area corresponding to the second sub-photomask, M first mask identifiers are arranged on the first sub-photomask, and M second mask identifiers are arranged on the second sub-photomask, the M first mask identifiers are in one-to-one correspondence with the M second mask identifiers, the corresponding first mask identifiers and second mask identifiers jointly form a complete identifier pattern, and the identifier pattern is located in a chip area of the photomask. According to the invention, the alignment deviation between two times of exposure can be captured through the pattern formed after exposure of the first mask mark on the first sub-photomask and the second mask mark on the second sub-photomask, so that the alignment precision is improved.

The invention relates to a seamless splicing grating, in particular to a method for manufacturing a seamless splicing grating based on a dynamic straight-edge diaphragm, which comprises the following steps of: aligning the edge of the dynamic straight-edge diaphragm with a splicing seam position mark on one side of a substrate, performing simple harmonic motion on the dynamic straight-edge diaphragm along the direction vertical to the splicing seam, realizing dynamic scanning and completing first interference exposure; the edge of the dynamic straight-edge diaphragm is aligned with the abutted seam position mark on the other side of the substrate, stripe locking is carried out by utilizing the grating latent image reserved by the first exposure, so that the dynamic straight-edge diaphragm carries out simple harmonic motion in the direction perpendicular to the abutted seam, dynamic scanning is realized, and second interference exposure is completed; carrying out unified development on the exposed substrate to obtain a photoresist grating mask without splicing seams, and transferring a grating structure on the mask to a dielectric substrate; according to the technical scheme, the defects that in the prior art, due to abutted seam modulation, the laser damage resistance is poor, and the machining difficulty is large can be effectively overcome.

A test wafer is placed inside a baking module and is baked. Via one or more temperature sensors, a cumulative heat amount delivered to the test wafer during the baking is measured. The measured cumulative heat amount is compared with a predefined cumulative heat amount threshold. In response to the comparing indicating that the measured cumulative heat amount is within the predefined cumulative heat amount threshold, it is determined that the baking module is qualified for actual semiconductor fabrication. In response to the comparing indicating that the measured cumulative heat amount is outside of the predefined cumulative heat amount threshold, it is determined that the baking module is not qualified for actual semiconductor fabrication.

The invention provides a photomask defect repairing method, which relates to the technical field of semiconductors, and comprises the following steps: firstly, determining the position of a defect on a photomask; then, forming a glue blocking layer on the surface of the defect, and covering the defect with the glue blocking layer; thirdly, a photoresist layer is formed, the photoresist layer is distributed around the photoresist blocking layer, and non-adhesion exists between the photoresist layer and the photoresist blocking layer; then, the photoresist layer is used as a mask, and the photoresist layer and the defects are etched so as to remove the photoresist layer and the defects; due to the fact that the photoresist layer and the photoresist blocking layer have non-adhesion, in the process of forming the photoresist layer, the photoresist layer cannot be formed on the surface of the photoresist blocking layer, the photoresist layer is formed around the photoresist blocking layer, and after the photoresist layer is formed, the photoresist layer can be directly used as a mask to etch the photoresist blocking layer and the defects, so that the photoresist blocking layer and the defects are removed, and the yield of the product is improved. The photomask repairing process is simplified, secondary exposure and baking and developing processes after exposure on the photomask are avoided, the photomask repairing period is shortened, and the repairing precision is improved.

Chemically amplified (CA) positive resist compositions are described which are comprised of the following solid components: Component (1) a PAG having structure (I); Component (2) a hydroxybenzoic acid having structure (II); Component (3) a trialkyl amine quencher having structure (III); Component (4) an adhesion promoter which is an aryl-1H-tetrazole-5-thiol derivative having structure (IV); Component (5) a polymer comprising a reaction product formed by reacting without acid catalyst, (i) a Novolak; (ii) a polymer comprising hydroxystyrene and methacrylate and / or methacrylate protected by a high activation energy acid labile group, and a vinyl ether or a heteroalicylic; Component (6) a polymer comprising structure (V); and Component (7) a Novolak polymer. Also described, is the use of these resist composition in a method for forming a photoresist relief image on a substrate.

The present invention provides a method for preparing a multi-level stepped microstructure, which comprises the following steps: (1) preparing a photoresist coating on a substrate; (2) designing an initial exposure layout, the initial exposure layout being a grayscale image, and the grayscale value of each pixel in the grayscale image being 0-255 gray levels; the grayscale value of each pixel on the initial exposure layout is correlated with the exposure dose of the ultraviolet beam to each point on the photoresist coating; (3) optimizing the initial exposure layout to obtain an optimized exposure layout; (4) importing the optimized exposure layout into an ultraviolet lithography system, and using ultraviolet lithography equipment to perform exposure processing on the photoresist coating; (5) performing a developing process on the exposed photoresist coating to generate a photoresist stepped microstructure corresponding to the optimized exposure layout on the photoresist coating. The method of the present invention can prepare stepped microstructures with small sizes, multiple step orders, and arbitrary heights with high precision.

The present invention discloses a method and device for measuring the center offset of an objective lens in a lithography apparatus. The measurement method includes: aligning the center of a preset pattern on a mask plate with the center of the objective lens; wherein, the preset pattern is a centrosymmetric figure; placing a substrate to be exposed on a moving stage, and aligning the center of the moving stage with the theoretical projection center of the objective lens; moving the substrate to expose a preset area to be exposed on the substrate; wherein, the preset area to be exposed is centrosymmetric and includes at least four sub-areas to be exposed having the same distance from the center of the moving stage; obtaining the final actual image of the exposed substrate, and obtaining the corresponding final theoretical image after the substrate is exposed; performing correlation matching between the region of interest of the final theoretical image and the final actual image to calculate the center offset; wherein, the region of interest includes at least part of the final theoretical image corresponding to the preset area to be exposed. The present invention can improve the measurement accuracy of the center offset.

The invention discloses a method for improving photoetching line roughness. The method comprises the following steps: S1, providing a plurality of product sheets before a photoetching process, wherein the number of the product sheets is at least three; s2, gluing is conducted, multiple gluing pieces are obtained, multiple pre-baking temperatures are set for multiple product pieces, the multiple pre-baking temperatures are sequentially decreased or increased, and the other pre-baking parameters are the same; s3, exposure: exposing the plurality of glued sheets under the same exposure condition to obtain a plurality of exposed sheets; s4, developing: developing the plurality of exposed exposure sheets under the same developing condition to obtain a plurality of developing sheets; and S5, observing the line roughness, determining the influence of the prebaking temperature on the line roughness, and determining the optimized parameters and the optimized process of batch production of the photoetching process. Therefore, the optimization direction is broadened for improving the photoetching line roughness, the optimization parameters of the photoetching line roughness can be determined, and an optimization process can be provided for batch production of the photoetching process.

1. Name of the product of this design: X-ray image stitching graphical user interface for electronic equipment. 2. Purpose of the product of this design: an electronic device. 3. The key points of the design of this appearance design product are the content displayed and the interaction method of the graphical user interface. 4. The picture or photo that best illustrates the key points of the design: Design 2 interface change state diagram 3. 5.Omit the rear view, left view, right view, top view and bottom view. 6. Designate Design 2 as the base design. 7. Purpose of Graphical User Interface: It is used to obtain stitched X-ray images. 8. The area of ​​the graphical user interface in the product: displayed on the screen, occupying all or part of the screen. 9. Human-computer interaction method of the graphical user interface: In the stitching protocol interface shown in the main view of Design 1, click the exposure buttons one by one. After the exposure is completed, it will enter the interface shown in the Design 1 interface change state diagram. For the style of the Design 1 interface change state diagram, please refer to the usage status reference diagram of the Design 1 interface change state diagram. In the stitching protocol interface shown in the main view of Design 2, click the exposure buttons one by one, and after completing the exposure, enter the interface shown in Design 2 interface change state diagram 1; click the restart button of Design 2 interface change state diagram 1 to display Design 2 interface change state diagram 2; select the rectangular tool of Design 2 interface change state diagram 2 and perform corresponding operations to display Design 2 interface change state diagram 3; click the next button of Design 2 interface change state diagram 3 to display Design 2 interface change state diagram 4. In the stitching protocol interface shown in the main view of Design 3, click the exposure buttons one by one, and after completing the exposure, enter the interface shown in Design 3 interface change state diagram 1; click the restart button of Design 3 interface change state diagram 1 to display Design 3 interface change state diagram 2; select the point tool of Design 3 interface change state diagram 2 and perform corresponding operations to display Design 3 interface change state diagram 3; click the next button of Design 3 interface change state diagram 3 to display Design 3 interface change state diagram 4. After selecting the point tool in the Design 4 main view and performing corresponding operations, the Design 4 interface change state diagram 1 is displayed. Click the Next button in the Design 4 interface change state diagram 1 to display the Design 4 interface change state diagram 2. After selecting the rectangular box tool in the Design 5 main view and performing corresponding operations, the Design 5 interface change state diagram 1 is displayed. Click the Next button in the Design 5 interface change state diagram 1 to display the Design 5 interface change state diagram 2. 10. Other situations that require explanation Description of change status: For the style of the interface change state diagram of Design 1, please refer to the use state reference diagram of the interface change state diagram of Design 1; for the style of the interface change state diagram of Design 2, please refer to the use state reference diagram of the interface change state diagram of Design 2; for the style of the interface change state diagram of Design 2, please refer to the use state reference diagram of the interface change state diagram of Design 2; for the style of the interface change state diagram of Design 2, please refer to the use state reference diagram of the interface change state diagram of Design 2; for the style of the interface change state diagram of Design 2, please refer to the use state reference diagram of the interface change state diagram of Design 2; for the style of the interface change state diagram of Design 3, please refer to the use state reference diagram of the interface change state diagram of Design 3; ; For the style of Design 3 interface change state diagram 4, please refer to the usage state reference diagram of Design 3 interface change state diagram 4; for the style of Design 4 main view, please refer to the usage state reference diagram of Design 4 main view; for the style of Design 4 interface change state diagram 1, please refer to the usage state reference diagram of Design 4 interface change state diagram 1; for the style of Design 4 interface change state diagram 2, please refer to the usage state reference diagram of Design 4 interface change state diagram 2; for the style of Design 5 main view, please refer to the usage state reference diagram of Design 5 main view; for the style of Design 5 interface change state diagram 1, please refer to the usage state reference diagram of Design 5 interface change state diagram 1; for the style of Design 5 interface change state diagram 2, please refer to the usage state reference diagram of Design 5 interface change state diagram 2.

A method of fabricating a semiconductor device includes providing a first substrate and forming a resist layer over the first substrate. In some embodiments, the method further includes performing an exposure process to the resist layer. The exposure process includes exposing the resist layer to a radiation source through an intervening mask. In some examples, the intervening mask includes a second substrate, a multi-layer structure formed over the second substrate, a capping layer formed over the multi-layer structure, and an absorber layer disposed over the capping layer. In some embodiments, the absorber layer includes a first main pattern area and an opening area spaced a distance from the first main pattern area. In various examples, the method further includes, after performing the exposure process, developing the exposed resist layer to form a patterned resist layer.

The utility model discloses an oversized RTR exposure device which comprises a cabinet, a fan filter assembly is arranged on the cabinet, and an RTR exposure machine is arranged in the cabinet; the RTR exposure machine comprises a rack, and an unwinding device, a first deviation rectifying device, an exposure conveying wheel, an exposure device, a second deviation rectifying device and a winding device are arranged on the rack; according to the utility model, the first deviation rectifying device and the second deviation rectifying device are used for detecting whether the tension of the photosensitive film is not uniform, and deviation rectifying is carried out if the tension is detected, so that the photosensitive film on the exposure delivery wheel is smooth. The exposure device is used for exposing the passing photosensitive film; and the winding device is used for winding and storing the processed photosensitive film. The device can be adapted to the processing operation of a large-size photosensitive film roll, and deviation correction is respectively carried out on the working procedures before and after exposure of the photosensitive film, so that the processing and rolling of the photosensitive film are more regular, the processing effect is good, and the automatic operation is realized in the whole process.

The invention discloses a resolution test card for X-ray imaging equipment and a processing method thereof, and belongs to the technical field of X-ray imaging. The invention firstly spin-coats photoresist uniformly on a substrate, and obtains a photoresist layer by baking and solidification; then, the photoresist in the pattern area of ​​the resolution test card is exposed by photolithography technology, and the exposed photoresist is soluble in a developer, and after being cleaned by the developer, a gap identical to the pattern of the resolution test card is formed on the photoresist layer; then, a metal material is deposited at the gap, and the metal material grows on the surface of the substrate until all the gaps are filled, and the metal material contacts the substrate to form a resolution test card pattern; then, the remaining photoresist on the photoresist layer is peeled off, and the photoresist layer is removed; then, a protective layer is grown on the surface of the substrate, and the preparation of the resolution test card is completed. The invention simplifies the processing procedure of the resolution test card, improves the processing efficiency while ensuring safety, saves processing time, and greatly reduces costs.

An artificial intelligence (AI) lead marker detection system is employed either as a component of the X-ray imaging system or separately from the X-ray imaging system to scan post-exposure X-ray images to detect and insert various lead markers, to digitize information provided by the type and location of the lead marker, and to employ the marker information in different X-ray system workflow automations. The marker information obtained by the AI lead marker detection system can also provide useful data for use in downstream clinical and quality applications apart from the X-ray system, such as either AI or non-AI analytical applications.

The present disclosure provides a method for obtaining high-resolution patterns by using different illumination modes, and relates to the field of photolithography technology, and the method comprises the following steps: forming a negative photosensitive film layer, a positive photosensitive film layer and a metal enhancement layer which are sequentially stacked on a substrate; using a first illumination mode, exposing the positive photosensitive film layer based on a mask plate; using a second illumination mode, exposing the negative photosensitive film layer based on the mask plate; the illumination wavelengths of the first illumination mode and the second illumination mode are the same, and the first focal depth of the first illumination mode is different from the second focal depth of the second illumination mode; sequentially developing the exposed positive photosensitive film layer and the exposed negative photosensitive film layer to obtain pattern structures generated by twice exposure; and transferring the pattern structures generated by twice exposure to the substrate to obtain high-resolution patterns.

A method includes applying a first voltage to a source of a first transistor of a detection unit of a semiconductor detector in a test wafer and applying a second voltage to a gate of the first transistor and a drain of a second transistor of the detection unit. The first transistor is coupled to the second transistor in series, and the first voltage is higher than the second voltage. A pre-exposure reading operation is performed to the detection unit. Light of an exposure apparatus is illuminated to a gate of the second transistor after applying the first and second voltages. A post-exposure reading operation is performed to the detection unit. Data of the pre-exposure reading operation is compared with the post-exposure reading operation. An intensity of the light is adjusted based on the compared data of the pre-exposure reading operation and the post-exposure reading operation.