52 results about "Post exposure" patented technology

The invention provides a method for monitoring the light leakage degree of an exposure machine, which comprises the following steps of: firstly, designing a special photomask with a shading area and a light-transmitting area which are arranged at intervals, then exposing a wafer coated with a photoresist layer for multiple times by using the special photomask according to a preset exposure condition, and then collecting the thickness of the photoresist layer in the shading area after each exposure to obtain the light leakage degree of the exposure machine. And finally, judging the light leakage severity of the exposure machine according to the exposure times and the thickness of the photoresist layer of the shading area collected after each exposure. According to the monitoring method provided by the invention, the severity of light leakage of the exposure machine can be timely and effectively monitored, the situation that the photoresist layer in the shading area is excessively thinned or even the dielectric layer is partially thinned, so that the subsequent etching process or ion implantation process is insufficiently withstood and the product is scrapped is avoided, and the production efficiency is improved. The effectiveness of monitoring and the smooth proceeding of the subsequent etching process or ion implantation process and the like are ensured, and the product yield is improved.

A method for forming a photoresist pattern includes: (i) a step of forming a photoresist film on a support using a photoresist composition; (ii) a step of exposing the photoresist film; and (iii) a step of developing the exposed photoresist film to form a photoresist pattern, characterized in that the photoresist composition contains: a resin (A) whose solubility in the developer changes due to the action of an acid, an acid-generating agent (B) that generates acid upon exposure, a photodegradable alkali (D1), a solvent (S), and a compound (X) represented by the following formula (x-1), wherein the amount of solvent remaining in the photoresist film formed in step (i) is 910 ppm or more, wherein R 1 ~R 4 It is a hydroxyl group or an alkyl group having 1 to 5 carbon atoms, R 5 and R 6 It is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or an alkyl group having 1 to 10 carbon atoms obtained by substitution with a hydroxyl group.

The invention discloses a laser imaging exposure machine, and belongs to the technical field of laser imaging exposure machines, the laser imaging exposure machine comprises a laser imaging exposure machine body, a first fixing plate and a second fixing plate, the first fixing plate and the second fixing plate are respectively arranged at two ends of the laser imaging exposure machine body, the first fixing plate is provided with a loosening assembly, and the second fixing plate is provided with a clamping assembly. A winding assembly is mounted on the second fixing plate, and the flexible base material is loosened by the loosening assembly, exposed by the laser imaging exposure machine body and stored by the winding assembly; through the design of the arc-shaped plate and the adjusting plate, the tensioning wheel is matched, the curved surface of the flexible base material can be attached in a self-adaptive mode, the curved surface of the flexible base material is cleaned, when the tensioning wheel adjusts the tightness degree of the flexible base material, the adjusting plate can adjust the position so as to be matched with the adjusted curved surface of the flexible base material, and the cleaning effect is better provided.

A method and apparatus for performing post-exposure bake operations is described herein. After exposure of photoresist on a substrate, the substrate is heated during a baking process to facilitate protection of the resist. The baking process is performed in a vacuum environment at sub-atmospheric pressures. After baking at reduced pressure, the substrate is cooled. The cooling process is performed at sub-atmospheric pressures. Further development of the resist is performed at ambient pressures.

The invention discloses an exposure dose determination method, device and equipment and a storage medium, which are applied to the technical field of photoetching, and the method comprises the following steps: obtaining a target critical size and a line width drift tolerance limit between an exposure pattern formed after photoresist exposure and an etched functional layer pattern; obtaining an exposure dose slope; the exposure dose slope is a slope value determined based on the critical dimensions of the corresponding exposure patterns under different exposure doses; determining an exposure dose step length according to the line width drift tolerance limit and the exposure dose slope; and determining a target exposure dose corresponding to the target key size according to the exposure dose step length. The exposure dose step length is calculated based on the line width drift tolerance limit between the exposure pattern formed after exposure and the functional layer pattern formed after etching, so that the target exposure dose can ensure that the line width drift between the exposure pattern formed after exposure and the functional layer pattern formed after etching meets the requirement; therefore, the process window loss can be reduced.

The invention relates to a seamless splicing grating, in particular to a method for manufacturing a seamless splicing grating based on a dynamic straight-edge diaphragm, which comprises the following steps of: aligning the edge of the dynamic straight-edge diaphragm with a splicing seam position mark on one side of a substrate, performing simple harmonic motion on the dynamic straight-edge diaphragm along the direction vertical to the splicing seam, realizing dynamic scanning and completing first interference exposure; the edge of the dynamic straight-edge diaphragm is aligned with the abutted seam position mark on the other side of the substrate, stripe locking is carried out by utilizing the grating latent image reserved by the first exposure, so that the dynamic straight-edge diaphragm carries out simple harmonic motion in the direction perpendicular to the abutted seam, dynamic scanning is realized, and second interference exposure is completed; carrying out unified development on the exposed substrate to obtain a photoresist grating mask without splicing seams, and transferring a grating structure on the mask to a dielectric substrate; according to the technical scheme, the defects that in the prior art, due to abutted seam modulation, the laser damage resistance is poor, and the machining difficulty is large can be effectively overcome.

The invention provides a photomask defect repairing method, which relates to the technical field of semiconductors, and comprises the following steps: firstly, determining the position of a defect on a photomask; then, forming a glue blocking layer on the surface of the defect, and covering the defect with the glue blocking layer; thirdly, a photoresist layer is formed, the photoresist layer is distributed around the photoresist blocking layer, and non-adhesion exists between the photoresist layer and the photoresist blocking layer; then, the photoresist layer is used as a mask, and the photoresist layer and the defects are etched so as to remove the photoresist layer and the defects; due to the fact that the photoresist layer and the photoresist blocking layer have non-adhesion, in the process of forming the photoresist layer, the photoresist layer cannot be formed on the surface of the photoresist blocking layer, the photoresist layer is formed around the photoresist blocking layer, and after the photoresist layer is formed, the photoresist layer can be directly used as a mask to etch the photoresist blocking layer and the defects, so that the photoresist blocking layer and the defects are removed, and the yield of the product is improved. The photomask repairing process is simplified, secondary exposure and baking and developing processes after exposure on the photomask are avoided, the photomask repairing period is shortened, and the repairing precision is improved.

A method of fabricating a semiconductor device includes providing a first substrate and forming a resist layer over the first substrate. In some embodiments, the method further includes performing an exposure process to the resist layer. The exposure process includes exposing the resist layer to a radiation source through an intervening mask. In some examples, the intervening mask includes a second substrate, a multi-layer structure formed over the second substrate, a capping layer formed over the multi-layer structure, and an absorber layer disposed over the capping layer. In some embodiments, the absorber layer includes a first main pattern area and an opening area spaced a distance from the first main pattern area. In various examples, the method further includes, after performing the exposure process, developing the exposed resist layer to form a patterned resist layer.

The present disclosure provides a method for obtaining high-resolution patterns by using different illumination modes, and relates to the field of photolithography technology, and the method comprises the following steps: forming a negative photosensitive film layer, a positive photosensitive film layer and a metal enhancement layer which are sequentially stacked on a substrate; using a first illumination mode, exposing the positive photosensitive film layer based on a mask plate; using a second illumination mode, exposing the negative photosensitive film layer based on the mask plate; the illumination wavelengths of the first illumination mode and the second illumination mode are the same, and the first focal depth of the first illumination mode is different from the second focal depth of the second illumination mode; sequentially developing the exposed positive photosensitive film layer and the exposed negative photosensitive film layer to obtain pattern structures generated by twice exposure; and transferring the pattern structures generated by twice exposure to the substrate to obtain high-resolution patterns.

The application relates to a free curved surface random metal texture manufacturing method, which comprises the following steps: forming a photoresist film on a water-drop-shaped free curved surface substrate after ultrasonic cleaning; determining pre-prepared texture pattern information, obtaining visual image information of the water-drop-shaped free curved surface substrate after baking and solidifying the photoresist, analyzing the visual image information and the pre-prepared texture pattern information, determining a laser motion track, and using the laser motion track to control the laser to perform an exposure operation on the water-drop-shaped free curved surface substrate after baking and solidifying the photoresist according to the pre-prepared texture pattern information; developing the water-drop-shaped free curved surface substrate after exposure; performing vacuum evaporation film plating on the water-drop-shaped free curved surface substrate after development; removing the photoresist on the water-drop-shaped free curved surface substrate after film plating; and using a high-precision visual system and a pre-programmed spatial outward expansion curved surface track to ensure that the laser is accurately exposed according to the pre-prepared texture pattern information, so that the deviation problem caused by insufficient repeated precision is reduced.

The invention provides a pattern alignment precision control method, etching equipment and a storage medium, and the method comprises the steps: forming photoresist on the surface of a to-be-etched structure, the photoresist comprising a first actual pattern after actual exposure; obtaining an ideal pattern of the photoresist after ideal exposure, determining a first deviation distance and a first deviation direction from a first actual center position of the first actual pattern to an ideal center position of the ideal pattern, and etching the photoresist for at least the first deviation distance along the first deviation direction to obtain a second actual pattern, the second actual graph at least comprises an ideal central position, namely, the alignment deviation data of the first actual graph is determined by utilizing the ideal graph after ideal exposure, and then the first actual graph is modified by utilizing the alignment deviation data, so that the alignment deviation of the second actual graph obtained after modification and the ideal graph is reduced; therefore, the alignment precision of the pattern is controlled, and the yield of the semiconductor device is improved.

Embodiments of the present application provide a mask and a design method thereof. In the mask provided by the embodiments of the present application, for a pattern array including at least two target patterns, since each corner of each target pattern is provided with at least one second auxiliary pattern having an acute angle or an obtuse angle with a straight line on which a side of the second auxiliary pattern lies, and a distance between the second auxiliary pattern and an adjacent corner is less than a distance between a first auxiliary pattern and an adjacent side, the arrangement density of the auxiliary patterns near the corner can be improved, so that the light intensity distribution near the corner of the target pattern in the exposure process can be improved, the degree of rounding of the corner can be reduced, and the matching degree of a pattern formed by a photoresist layer after exposure and the target pattern can be improved. Meanwhile, the arrangement density of the auxiliary patterns in the periphery of each target pattern can be increased, the focusing depth in the exposure process can be increased, and the matching degree of the pattern formed by the photoresist layer after exposure and the target pattern can be further improved.

This application relates to a lens defect detection method, apparatus, and semiconductor structure fabrication method. The lens defect detection method of this application includes: providing a wafer; the wafer including multiple exposure areas; exposing each of the exposure areas, wherein at least two different exposure energies are used during the multiple exposures; after the multiple exposures, determining whether the lens has a defect based on whether spots appear in each of the exposure areas; if spots appear in the exposure areas, then the lens is determined to have a defect. The lens defect detection method provided by this application, by exposing the same wafer with different exposure energies, can detect less obvious defects on the lens, exhibiting high sensitivity; moreover, the detection process is simple and easy to implement.

To improve exposure quality in a direct-writing exposure apparatus by allowing adequate dust removal even in cases where a substrate or a stage has surface unevenness.SOLUTION: In a direct-writing exposure apparatus, exposure is performed when a substrate W passes through an irradiation area irradiated with light of an exposure pattern by each exposure head 1 including a spatial light modulator 3 while a stage 6 on which the substrate W is placed is moved by a stage moving mechanism 61, and after a predetermined number of exposures, a main sequence program 72 moves the stage 6 in a state where the substrate W is not placed thereon, negative pressure from a suction source 82 acts on a slit 810 of a nozzle 81 held with a distance d within a range of 0.5 mm to 3 mm by a nozzle position adjusting mechanism 83 to perform suction, and dust P adhering to grooves 601 and holes 602 of the stage 6 is sucked and removed.SELECTED DRAWING: Figure 7

The invention discloses a timestamp synchronization method, device and equipment of an all-round parking system and a storage medium, and relates to the technical field of vehicle parking, and the method comprises the steps that a deserializer triggers a camera module through GPIO to carry out exposure, obtains a system timestamp to obtain an exposure timestamp, and pushes the exposure timestamp to a created timestamp FIFO to be stored; based on image data output after exposure of the camera module, synthesizing a panorama through a splicing algorithm, and generating a view angle conversion graph through view angle conversion; and creating a buffer according to the resolution and the image format of the panorama and the view angle conversion diagram, and writing the exposure timestamp in the timestamp FIFO, the panorama and the view angle conversion diagram into the buffer. According to the invention, strict synchronization of the image and the timestamp can be ensured, the performance of the all-round parking system is improved, and the identification accuracy of the parking space position is improved.

The invention discloses a double-layer photoetching method for a semiconductor device with a deep groove structure, which comprises the following steps of: forming an effect of filling photoresist in a deep groove through a first photoetching process, and continuously performing a second photoetching process on the basis to form a specific etching pattern; and finally, taking the etching pattern formed by the secondary photoetching process as a main etching mask, taking the photoresist in the primary photoetching process as an auxiliary mask and support, and carrying out graphical transfer on a device below. According to the method, two layers of photoresist are arranged on a wafer substrate according to the characteristics that positive photoresist is insoluble in a developing solution before exposure and can be dissolved in the developing solution after exposure and the characteristics that negative photoresist is dissolved in the developing solution before exposure and cannot be dissolved in the developing solution after exposure, and the photoresist close to the wafer substrate is used for supporting; and the other layer of photoresist is used for limiting an etching area. By controlling the optical characteristics (different refractive indexes and absorbance) of the double-layer photoresist, the morphology of the side surface of the groove is improved, the morphology of the photoresist layer is optimized, and the critical dimension deviation is reduced.

The invention discloses a preparation method of a microlens array. The preparation method comprises the following steps: providing a plain film substrate; forming a photoresist layer on the plain film substrate; determining a target parameter of the micro-lens array according to the light emitting parameter of the chip to be matched, and further determining a preset exposure pattern of the micro-lens array; controlling the exposure dose of each point on the photoresist layer through a digital micromirror device according to a preset exposure pattern corresponding to the microlens array, and exposing the photoresist layer; developing the exposed photoresist layer to obtain a plurality of first photoresist structures; and taking the first photoresist structure as a mask, and etching the first photoresist structure and the plain film substrate by using an etching process to form the micro-lens array. According to the invention, when the light emitting parameter of the chip to be matched is changed, the microlens array matched with the chip to be matched can be obtained only by changing the preset exposure pattern used by the digital micromirror device, so that the subsequent coupling loss is remarkably reduced.

The utility model relates to a full-automatic turn-over exposure device which comprises a feeding mechanism, first exposure equipment, a turn-over mechanism, a first transfer unit, second exposure equipment and a discharging mechanism, and a positioning mechanism is arranged at the discharging end of the feeding mechanism; the first exposure equipment is located on one side of the positioning mechanism, the second exposure equipment is located on one side of the first exposure equipment, the discharging mechanism is located on one side of the second exposure equipment, and the turn-over mechanism is used for obtaining a plate from the first exposure equipment so that the unexposed face of the plate faces outwards; the first transferring unit is arranged in the middle of the lattice mechanism and used for transferring plates mutually. A plate passes through the feeding mechanism and is positioned by the positioning mechanism, the first transfer unit transfers the plate to the first exposure equipment for exposure, the turn-over mechanism sucks and turns over the plate, and the first transfer unit sucks one unexposed surface of the plate and transfers the unexposed surface to the second exposure equipment for exposure. After double-sided exposure of the plate is completed, the plate is transferred to the discharging mechanism through the second transferring unit, and the productivity is greatly improved.

The invention discloses a photomask used for a splicing type photoetching manufacturing process and a manufacturing method and a using method thereof, the photomask is used for transferring a layout pattern to a photoresist, the layout pattern comprises a first pattern, a third pattern and a fifth pattern which are connected, and the photomask comprises the following steps: firstly exposing the mask, and then exposing the mask; comprising a first exposure area and a first exposure splicing area, the first exposure area comprises a first pattern, and the first exposure splicing area comprises a second pattern; the post-exposure mask comprises a post-exposure area and a post-exposure splicing area, the post-exposure area comprises a third pattern, and the post-exposure splicing area comprises a fourth pattern; wherein the pre-exposure splicing area and the post-exposure splicing area are overlapped during exposure, the second pattern and the fourth pattern are overlapped during exposure so as to form a fifth pattern after exposure, if the pattern of the photomask is light-proof, one of the second pattern or the fourth pattern is the enlargement adjustment of the fifth pattern, and if the pattern of the photomask is light-transmitting, one of the second pattern and the fourth pattern is the enlargement adjustment of the fifth pattern. And one of the second pattern and the fourth pattern is used for reducing the fifth pattern.

The application discloses a method and device for correcting electron beam proximity effect and a medium, and relates to the field of electron beam lithography. In the previous method of enlarging the pattern, the sharp corners are enlarged, and the edges of the pattern are also enlarged, which leads to the distortion of the pattern. In the method of the application, only the exposure area at the position affected by the proximity effect is increased, and the position not affected by the proximity effect still coincides with the original pattern, so the shape preserving effect of the pattern is good. In the previous method of adding a compensation pattern, the edges of the pattern may be convex. In the method of the application, the finally formed area is the area surrounded by the intersection points or the vertex of the sharp corner not affected by the proximity effect and the area surrounded by the intersection points. Therefore, there is no edge convexity in the corrected target pattern, so the method provided by the application reduces the influence of the proximity effect and improves the shape preserving effect of the pattern after exposure.

A method for manufacturing a master mold for imprinting, with which structures formed in a desired forward taper can be formed on a base material. This method comprises a coating step in which a resist having a predetermined film thickness is coated on a base material, an exposure step in which the resist coated on the base material is exposed through a mas, and a development step in which the exposed resist is developed, the exposure step involving setting the exposure amount to be equal to or less than twice the minimum exposure amount (Df) at which the resist coated on the base material undergoes solarization across the entire thickness of the resist, and exposing predetermined portions of the resist, so that the side surface shape of the structure constituted of the resist formed by development in the development step is a forward taper.

Various embodiments described herein relate to methods, apparatus, and systems for treating a metal-containing photoresist to modify its material properties. For example, the present approach may include providing a substrate in a process chamber, the substrate including a photoresist layer on a substrate layer, the photoresist including a metal, and treating the photoresist to modify its material properties to enhance etch selectivity in a subsequent post-exposure dry development process. In various embodiments, the treatment may include exposing the substrate to elevated temperatures and / or a remote plasma. One or more process conditions, such as temperature, pressure, ambient gas chemistry, gas flow rates / ratios, and moisture, may be controlled during processing to tailor the material properties as desired.

The invention relates to the field of medical images, and discloses a mobile DR intelligent dose control and automatic exposure system which comprises a pre-exposure anatomical modeling module, a dynamic exposure control module and a post-exposure self-optimization module. Before exposure, the system constructs a three-dimensional anatomical model by using multi-modal data, and generates an initial AEC target matrix containing a plurality of virtual regions of interest. At the moment of exposure, the system carries out one-time accurate correction on a matrix deviated from the movement of the patient. During exposure, the system monitors the dose in parallel according to the corrected matrix to terminate exposure. After exposure, the system evaluates image quality, and combines scores with patient sign parameters obtained before exposure to update an independent dose correction model instead of a standard database, so as to realize closed-loop self-optimization. According to the method, the problem of exposure misalignment caused by movement of the patient is solved, the image quality consistency is improved through a robust individualized learning mechanism, and accurate dose optimization is realized.

The utility model discloses a high-precision rotary material taking arm for a double-sided exposure machine, and relates to the technical field of exposure machine auxiliary equipment, the high-precision rotary material taking arm comprises a double-sided exposure machine body, the upstream of the double-sided exposure machine body is provided with a material taking mechanism, and the material taking mechanism comprises a rotating assembly, a material taking mechanism and a material taking mechanism, and the rotating assembly comprises a fixed frame arranged at the upstream of the double-sided exposure machine body. According to the high-precision rotary material taking arm for the double-sided exposure machine, when the rotating frame ascends and descends, the three suction cups can be driven to ascend and descend synchronously, so that materials to be exposed on one material placing disc are grabbed correspondingly, exposed materials on a tray are placed or grabbed correspondingly, the exposed materials are placed on the other material placing disc, and the materials are placed on the other material placing disc in cooperation with circulating rotation of the rotating frame; materials at three positions are placed or grabbed, so that manual auxiliary discharging is not needed in the whole process, automatic feeding and discharging of the double-sided exposure machine are achieved, and production continuity and high efficiency are ensured.

The application belongs to the technical field of semiconductor manufacturing, and discloses a preparation method of a high-fidelity photoresist pattern. The method comprises the steps of spin coating, pre-baking, exposure, post-exposure baking and development. The development step comprises: applying a developing solution to the surface of a substrate at a first rotation speed to preliminarily develop the photoresist; adjusting the substrate to a second rotation speed, which is lower than the first rotation speed, to partially remove the developing solution; applying the developing solution to the surface of the substrate while the substrate is in a stationary state, and performing main development while the substrate is kept in the stationary state; and again applying the developing solution to the surface of the substrate while the substrate is in a stationary state, and performing supplementary development while the substrate is kept in the stationary state. The application solves the problems of pattern distortion and shrinkage in the traditional process by using a segmented development process, improves the fidelity and process stability of the photoresist pattern, and has good industrial application value without the need to increase special materials or complex equipment.

The invention relates to a method for preparing a thermally stable undercut by using a single-layer negative photoresist and an application of the thermally stable undercut, and the method comprises the following steps: (1) spin-coating the single-layer negative photoresist on a substrate to form a photoresist layer of which the thickness is greater than 3 [mu] m; (2) carrying out pre-baking treatment on the photoresist layer; (3) performing low-dose exposure on the pre-baked photoresist layer; (4) performing high-temperature post-baking treatment on the exposed photoresist layer, wherein the temperature range of the high-temperature post-baking treatment is 135-145 DEG C; (5) developing the photoresist layer subjected to post-baking treatment by adopting a developing solution to form an initial undercut structure; (6) hardening the developed photoresist layer to stabilize the undercut structure; the method is a single-layer negative photoresist process, the preparation process is simple, and the thermostable and controllable large-amplitude undercut can be prepared through cooperative regulation and control of low-dose exposure and high-temperature PEB.

A plate processing line and methods for producing a flexographic printing plate. An imaging station applies image information to a first plate. A first exposure station cures the first plate. One or more of water, a solvent, and / or a thermal process is further applied to the first plate. A drying station or an after-exposure station is configured to expose the plate to further radiation. A feeding station is configured to feed the first plate cured by the exposure station and a second plate cured by a second exposure station to the processing station. A transportation cart may transport the plate between the first or second exposure stations and the processing station.

The present invention addresses a first problem of providing an actinic ray-sensitive or radiation-sensitive resin composition that is capable of forming a pattern having excellent LWR and has excellent post exposure delay stability. The present invention addresses a second problem of providing a resist film, a pattern formation method, and an electronic device manufacturing method that relate to the actinic ray-sensitive or radiation-sensitive resin composition.　An actinic ray-sensitive or radiation-sensitive resin composition according to the present invention contains a resin, a photoacid generator, and an acid diffusion control agent. The content of the acid diffusion control agent is 1.0 mass% or more relative to the total solid content of the composition, and at least one of the photoacid generator and the acid diffusion control agent is a compound represented by formula (1).

A probability-based simulation analysis method to predict pinhole formation in a photoresist is provided. The method determines a statistical distribution of cross-linking in the photoresist based on exposure stochastics and post-exposure bake randomness. The method updates the distribution of cross-linking in the photoresist as a result of film inhomogeneity. The effect of dry development on the updated distribution of cross-linking in the photoresist can be evaluated to determine a threshold value associated with a threshold amount of cross-linked states in the photoresist. A probability of pinhole formation can be determined based on the amount of cross-linked states that are below the threshold value.

A static mechanical simulation determines stress and deformation in a resist after development. The mechanical simulation takes patterned exposure data and post-exposure bake data as inputs to determine differential initial strain and stress in the resist. The initial strain is related to blanket volume loss that occurs in the resist as a result of exposure and post-exposure bake. Using the initial strain, film property, and geometry layout as inputs, the mechanical simulation determines or even quantifies a final stress and deformation in the resist after development. The final stress and deformation in the resist can be correlated to defect instances. Various strategies, including bulk mask optimization, pre-exposure operations, and enhanced optical proximity correction (OPC) that utilize the mechanical simulation learning, can be applied to reduce the initial strain or stress in the resist and thereby reduce defectivity after development.