64 results about "Acid labile" patented technology

To provide a resist composition capable of producing a resist pattern having good line edge roughness.SOLUTION: The resist composition contains a compound represented by formula (I), a resin having an acid-labile group, and an acid generator. [In the formula, R2 represents * -X1-Ph - L1 - OH. Ph represents a substituted or unsubstituted phenylene; R3 represents a halogen atom, a hydroxy group, a haloalkyl group or an alkyl group, and - CH2 - included in the alkyl group may be replaced by - O - or - CO -. m2 is an integer of 1 to 4, m3 is an integer of 0 to 3, provided that 1 ≤ m2 + m3 ≤ 4, and one or more of L1, R1, R2, and R3 have a halogen atom. ] SELECTED DRAWING: None

A resist composition comprising a base polymer comprising repeat units having a salt structure consisting of a sulfonic acid anion bonded to a polymer backbone and a sulfonium cation having an acid labile group of triple bond-bearing tertiary ester type as the acid generator exhibits a high sensitivity and reduced LWR or improved CDU.

The invention belongs to the technical field of integrated circuit materials, and particularly relates to mixed resin for deeply removing metal impurities in a photoresist solution and a method thereof. The mixed resin comprises chelating resin, modified resin and macroporous adsorption resin. The method disclosed by the invention comprises the step of enabling a photoresist solution to pass through the PFA column filled with the mixed resin disclosed by the invention. The metal impurities of the photoresist solution purified by the mixed resin can be less than or equal to 15ppb, and the purified photoresist solution is neutral. The mixed resin and the method disclosed by the invention are particularly suitable for treating a photoresist solution with acid-unstable components, and have wide application prospects and good economic benefits in the field of integrated circuit materials.

[Problem] To provide a polymer, a photoresist composition containing the same, and a pattern forming method. [Solution] A polymer comprising a first repeating unit containing a sulfone group directly bonded to a group of formula -C(Ra)(Rb)-, and a second repeating unit containing an acid-unstable group, a base-degradable group, a polar group, or a combination thereof, wherein Ra and Rb in the formula are each independently hydrogen, halogen, substituted or unsubstituted C1-30 alkyl, substituted or unsubstituted C3-30 cycloalkyl, substituted or unsubstituted C3-30 heterocycloalkyl, substituted or unsubstituted C2-30 alkenyl, substituted or unsubstituted C3-30 cycloalkenyl, substituted or unsubstituted C3-30 heterocycloalkenyl, substituted or unsubstituted C6-30 aryl, substituted or unsubstituted C7-30 arylalkyl, substituted or unsubstituted C7-30 alkylaryl, substituted or unsubstituted C2-30 heteroaryl, substituted or unsubstituted C3-30 heteroarylalkyl, or substituted or unsubstituted C3-30 alkylheteroaryl, but at least one of Ra and Rb is hydrogen.

An onium-salt-type monomer is represented by the formula (a), where “n1” is 0 or 1, “n2” is 1 to 4, “n3” is 0 to 2, “n4” is 0 or 1, “n5” is 0 to 4, and “n6” is 0 to 2; RA is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; RAL is an acid-labile group; R1 is a halogen atom, a nitro group, a cyano group; R2 is a halogen atom other than a fluorine atom, a nitro group, a cyano group; RF is a fluorine atom, a fluorinated saturated hydrocarbyl group, a fluorinated saturated hydrocarbyloxy group, or a fluorinated saturated hydrocarbylthio group having 1 to 6 carbon atoms; LA and LB are each a single bond, an ester bond; XL is a single bond or a hydrocarbylene group; and Z+ is an onium cation.

A carboxylic acid generating agent containing a carboxylate represented by formula (I) and a resist composition:wherein L10 is a single bond or a substituted / unsubstituted hydrocarbon group; W1 is an alicyclic hydrocarbon group having an iodine atom; L2 is a single bond or a substituted / unsubstituted hydrocarbon group; R5 is —X1-L12-R10 or —X2-L11-X1-L12-R10, X1 and X2 are each —CO—O—, —O—CO—, or the like, respectively, L11 is a substituted / unsubstituted hydrocarbon group, L12 is a single bond or a substituted / unsubstituted hydrocarbon group, R10 is an aromatic hydrocarbon group having one or more substituents, one or more of the substituents is —OR11, R11 is a hydrogen atom or an acid labile group; m5 is an integer of 1 to 4; and Z+ represents an organic cation.

To provide an onium salt type monomer excellent in solvent solubility, having high sensitivity and high contrast, excellent in EL, LWR, CDU and DOF, strong against pattern collapse and excellent also in etching resistance.SOLUTION: An onium salt monomer having the formula (a): Wherein n1 is 0 to 1, n2 is 1 to 4, n3 is 0 to 2, and n4 is 0 to 4, RA is H, F, methyl or trifluoromethyl, RAL is an acid labile group, R1 is halogen, nitro, cyano or the like, LA and LB are single bonds, ester bonds or the like, XL is a single bond or hydrocarbylene, Q1 and Q2 are H, F or fluorinated saturated hydrocarbyl, Q3 and Q4 are F or fluorinated saturated hydrocarbyl, and Z + is an onium cation. ) SELECTED DRAWING: None

To provide a carboxylate, a carboxylic acid generator, and a resist composition capable of producing a resist pattern having good CD uniformity.SOLUTION: The carboxylic acid generator and the resist composition contain a carboxylate represented by formula (I). [wherein L10 is a bond or a substituted or unsubstituted hydrocarbyl; W1 is an aliphatic hydrocarbyl having an iodine atom; L2 is a bond or a substituted or unsubstituted hydrocarbyl; R5 is - X1 - L12 - R10 or - X2 - L11 - - -, each of and being - CO-O -, - O-CO -, or the like; is a substituted or unsubstituted hydrocarbyl; is a bond or a substituted or unsubstituted hydrocarbyl; is an aromatic hydrocarbyl having one or more substituents; L11 X1 L12 X2 L12 R10 X1 R10, At least one of the substituents is -OR11, R11 is hydrogen or an acid labile group, m5 is an integer of 1 to 4, and Z + is an organic cation. ] SELECTED DRAWING: None

The present invention relates to the fragment-based synthesis of peptides, in particular the peptide LL37. In specific the present invention relates to a method for fragmented solid phase synthesis of an LL37 peptide of SEQ ID NO: 1, or a variant thereof, comprising providing a first fragment of LL37, or a variant thereof, coupled to a first resin solid support by a cleavable linker, providing at least one further side chain protected fragment of LL37 coupled to a second resin solid support, wherein the fragment-resin linker is acid labile, cleaving the further side chain protected fragment(s) from the second solid support without deprotecting the side chains, and sequentially coupling the first and further fragments to produce a peptide of SEQ ID NO: 1, or a variant thereof.

A method includes forming a protective layer over a substrate edge and a photoresist over a substrate. Protective layer removed and photoresist exposed to radiation. Protective layer made of composition including acid generator and polymer having pendant acid-labile groups. Pendant acid-labile groups include polar functional groups; acid-labile groups including polar switch functional groups; acid-labile groups, wherein greater than 5% of pendant acid-labile groups have structurewherein R1 is C6-C30 alkyl group, cycloalkyl group, hydroxylalkyl group, alkoxy group, alkoxyl alkyl group, acetyl group, acetylalkyl group, carboxyl group, alkyl carboxyl group, cycloalkyl carboxyl group, saturated or unsaturated hydrocarbon ring, or heterocyclic group; and R2 is C4-C9 alkyl group, cycloalkyl group, hydroxylalkyl group, alkoxy group, alkoxyl alkyl group, acetyl group, acetylalkyl group, carboxyl group, alkyl carboxyl group, or cycloalkyl carboxyl group; polymer having pendant acid-labile groups and lactone pendant groups; or polymer having pendant acid-labile groups and carboxylic acid groups.

To provide a carboxylate, a carboxylic acid generator, a resist composition and the like capable of producing a resist pattern having good pattern collapse resistance.SOLUTION: There are provided a carboxylate represented by formula (I), a carboxylic acid generator, and a resist composition. Wherein m10 represents an integer of 1 to 3, m11 represents an integer of 0 to 2, A1 / A2 represents a bond or a hydrocarbyl group, Ar1 / Ar2 represents an aromatic hydrocarbyl group or a heterocyclic hydrocarbyl group, R1 / R4 represents a hydroxy group, - X1 -, or the like, represents - CO-O -, - O-CO -, or the like, represents an acid-labile group, and each represent a halogen atom, a hydrocarbyl group, or the like, with the proviso that and may be bonded to each other to form a ring containing X +, R2 R10 R3 R3 X1 R2 R10, -CH2 - in the ring may be replaced by -O -, - S - or the like; m1 is an integer of 1 to 5, mm1 is an integer of 2 to 5, m2 is an integer of 0 to 4, m3 and m4 are each an integer of 0 to 5, and mm4 is an integer of 0 or 1; and X0 represents an optionally substituted C1-72 hydrocarbyl group. ] SELECTED DRAWING: None

A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. The photoresist layer includes a photoresist composition including a polymer. The polymer includes a monomer unit having a pendant sensitizer and crosslinking group, and a monomer unit having a pendant acid labile group. The photoresist layer is selectively exposed to actinic radiation, and the selectively exposed photoresist layer is developed.

An object is to provide a resist composition, a resin, a compound, etc. that can produce a resist pattern having good CD uniformity. 【Solution means】A resist composition containing a resin containing a structural unit represented by formula (IP). TIFF2026055806000225.tif39124[In the formula, R 0 is an alkyl group which may have a halogen atom, etc.; X 1 is a single bond, -O-, -CO-, etc.; L 1 is a single bond or a substituted / unsubstituted hydrocarbon group; Ar is a substituted / unsubstituted aromatic hydrocarbon group; A 1 is a hydrocarbon group; R 2 is a halogen atom or a hydrocarbon group; R 3 represents a hydrogen atom or an acid labile group, or COOR 3 and R 2 may together form a group having an acetal ring structure; m1 represents an integer of 1 to 6, and m2 represents an integer of 0 to 4.]

An actinic ray- or radiation-sensitive resin composition forms a pattern having excellent LWR performance. A resist film, pattern forming method, and method for manufacturing an electronic device employ the composition. The composition includes an acid-decomposable resin including a repeating unit having an acid-decomposable group in which an acid group having a pKa of 13 or less is protected by an acid labile leaving group, and one or more compounds (PAGs) that generate an acid upon irradiation with actinic rays or radiation, selected from a compound (I) and a compound (II). The content of the acid-decomposable resin is 10% by mass or more and that of the PAGs is 10% by mass or more with respect to the total solids content. The acid-decomposable resin has a halogen atom in a repeating unit other than a repeating unit having a group that generates an acid upon irradiation with actinic rays or radiation.

Anchor molecules for peptide synthesis in aqueous solutions are disclosed. Wherein the anchor molecules are independently present and may be covalently coupled to a variety of hydrophilic solid supports, such as CM agarose and carboxymethyl cellulose, by amido bonds under aqueous phase conditions using a coupling agent such as EDC (1-ethyl-3-(3-dimethylaminopropyl) carbodiimide) prior to the start of peptide synthesis. The anchor molecule has a general structure of Fmoc-AA-CH2-Ph-CH2-Ph-CH2-NH-(CH2) n-NH2, wherein Fmoc-AA represents an amino acid protected by Fmoc, and the general structure of the anchor molecule is shown as Fmoc-AA-NH-(CH2) n-NH2. The anchoring strategy includes an acid labile ester bond located between the carboxyl terminal of Fmoc-AA and the benzyl alcohol group of the solid support, which ester bond remains stable during peptide extension and is cleavable under strongly acidic conditions, achieving final peptide release. The anchor molecule may be functionalized to interact with the ion exchange resin. The present invention enables efficient solid phase peptide synthesis (SPPS) in an aqueous phase system, enhances compatibility with hydrophilic resins, and provides improved environmental sustainability by reducing dependence on organic solvents.

A resist composition that allows production of a resist pattern having excellent resolution, a favorable shape, and resistance to cracking includes resin (A) containing a structural unit having an acid labile group, and acid generator (B) represented by formula (b1). The resin (A) contains: resin (A1): a resin containing a structural unit represented by formula (a2-2) and a structural unit represented by formula (a1-1), but not containing a structural unit represented by formula (a1-2) or a structural unit represented by formula (a2-1); and resin (A2): a resin containing a structural unit represented by formula (a1-1) and a structural unit represented by formula (a2-1), but not containing a structural unit represented by formula (a1-2):

This invention discloses an immersion ArF photoresist composition, comprising ArF photoresist resin, a photoacid generator, and an organic solvent. The ArF photoresist resin consists of resin component I and resin component II, with a mass ratio of resin component I to resin component II of (2-10):1. Resin component I is a methacrylate host resin containing acid-instable groups, and resin component II is a fluorinated methacrylate homopolymer. During pre-baking, the low surface energy resin component II migrates to the air-coating interface, forming a hydrophobic barrier layer to inhibit component dissolution and maintain a water contact angle ≥85°; the high surface energy resin component I is arranged towards the substrate interface, ensuring adhesion and photolithography performance. This invention eliminates the need for an additional top anti-reflective coating, simplifying the process, improving resolution and line edge roughness, and is suitable for semiconductor manufacturing below 90nm.

A block copolymer comprising a central block comprising an acid labile group in the backbone of the block copolymer; and at least two copolymer arms covalently attached to the central block, wherein each copolymer arm comprises a first repeating unit and a second repeating unit different from the first repeating unit.

includes forming a protective layer over a substrate edge and a photoresist over layer removed and photoresist exposed to radiation. Protective layer including acid generator and polymer having pendant acid-labile groups. groups include polar functional groups; acid-labile groups including polar groups; acid-labile groups, wherein greater than 5% of pendant acid-labile groups have structureR1 is C6-C30 alkyl group, cycloalkyl group, hydroxylalkyl group, alkoxy group, alkoxyl alkyl group, acetyl group, acetylalkyl group, carboxyl group, alkyl carboxyl group, cycloalkyl carboxyl group, saturated or unsaturated hydrocarbon ring, or heterocyclic group; and R2 is C4-C9 alkyl group, cycloalkyl group, hydroxylalkyl group, alkoxy group, alkoxyl alkyl group, acetyl group, acetylalkyl group, carboxyl group, alkyl carboxyl group, or cycloalkyl carboxyl group; polymer having pendant acid-labile groups and lactone pendant groups; or polymer having pendant acid-labile groups and carboxylic acid groups.

A photoresist composition comprising a first component; a second component; and a solvent, wherein the first component comprises a non-polymerized onium salt generator, and the cation of the non-polymerized onium salt generator comprises an acid-insecure group, wherein the second component comprises a hydroxyaryl group, and the second component does not contain an acid-insecure group, and wherein the photoresist composition does not contain a polymer containing an acid-insecure group.

The invention provides a resist composition and a method for producing a resist pattern. The purpose of the present invention is to provide a resist composition capable of producing a resist pattern having excellent resolution, good shape and crack resistance. The resist composition contains a resin (A) containing a structural unit having an acid-labile group and an acid generator (B) represented by formula (b1), and the resin (A) contains: a resin (A1) which contains a structural unit represented by formula (a2-2) and a structural unit represented by formula (a1-1) and does not contain a structural unit represented by formula (a1-2) and a structural unit represented by formula (a2-1), and a resin (A2) which contains a structural unit represented by formula (a1-1) and does not contain a structural unit represented by formula (a1-2) and a structural unit represented by formula (a2-1); the resin (A2) contains a structural unit represented by formula (a1-1) and a structural unit represented by formula (a2-1), and does not contain a structural unit represented by formula (a1-2). [In the formula, the definitions are as defined in the description. ].

The present invention relates to providing a resist composition capable of producing resist patterns with good shape and good crack resistance. The solution is a resist composition comprising: a resin having acid-labile groups, a resin containing structural units of formula (I), an acid-generating agent, and a solvent. [Where R...] i41 It is a hydrogen atom or a methyl group; R i42 An acyl group or hydrogen atom having 2 to 7 carbon atoms, or a hydrocarbon group having 1 to 10 carbon atoms that can be replaced by a hydroxyl group; R i43 alkyl or alkoxy groups having 1 to 6 carbon atoms; p is an integer from 0 to 4; Z represents a divalent hydrocarbon group having 3 to 20 carbon atoms containing the group shown in formula (Ia), wherein the methylene group can be replaced by an oxygen atom, a sulfur atom, or a carbonyl group. * represents the bonding site with an oxygen atom; w and r each independently represent integers from 1 to 10, where when w is 1, R... i42 It is an acyl group with 2 to 7 carbon atoms.

To provide a resist composition for organic solvent development capable of producing a resist pattern having good CD uniformity (CDU).SOLUTION: The resist composition for organic solvent development contains a resin containing a structural unit having an ethylenically unsaturated double bond in a side chain, a structural unit represented by formula (a3-4) and a structural unit having an acid labile group, and an acid generator. Wherein La7 represents -O -, * -O - La8 -O -, * -O - La8 - CO -O -, * -O - La8 - CO -O - La9 - CO -O -, or * -O - La8 -O - CO - La9 -O -; La8 and La9 each independently represent an alkanediyl group. Ra24 is hydrogen, halogen, or alkyl optionally substituted with halogen. Ra25 represents a carboxyl group, a cyano group or an aliphatic hydrocarbyl group. ] SELECTED DRAWING: None

Disclosed are a salt represented by formula (I), an acid generator, and a resist composition comprising the same:wherein R1 and R2 each represent a hydroxy group, *—O—R10, *—O-L10-CO—O—R10; L10 represents an alkanediyl group; R10 represents an acid-labile group; R4, R5, R7 and R8 each represent a halogen atom, a haloalkyl group or a hydrocarbon group; A1 and A2 each represent a hydrocarbon group, the hydrocarbon group may have a substituent, and —CH2— included in the hydrocarbon group may be replaced by —O—, —CO—, —S— or —SO2—; m1 represents an integer of 1 to 5, m2 and m8 represent an integer of 0 to 5, m4, m5 and m7 represent an integer of 0 to 4, 1≤m1+m7≤5, 0≤m2+m8≤5; and Al− represents an organic anion.

Provided is a resist composition capable of producing a resist pattern having good CD uniformity (CDU). 【Solution means】A resist composition containing a compound represented by formula (I), a resin having an acid-labile group, and an acid generator. JPEG2026123019000153.jpg4169 [In the formula, R 1 is *-O-CO-R 10 etc.; L 1 is a single bond or an alkanediyl group which may have a halogen atom; R 10 is a group represented by formula (1b); R 2 is *-L 1 -R 1 etc.; R 3 at least one of which is a halogen atom or a haloalkyl group; R ba1 and R ba2 are each a hydrogen atom, a fluorine atom or an alkyl group having a fluorine atom; R ba3 represents a fluorine atom or an alkyl group having a fluorine atom.]

This invention provides a pattern formation method that uses a (meth)acrylic polymer, which can be used for ArF patterning, as the main framework, and obtains a narrow-pitch fine pattern by dry development without silylation. [Solution] A pattern formation method comprising: forming a multilayer on a substrate to be processed; forming a resist upper layer film using an ArF excimer positive-type chemical amplification resist composition; removing acid-unstable groups from the exposed portion of the resist upper layer film by exposure and post-exposure baking; performing a hard bake at a higher temperature and shorter time than the post-exposure bake to volatilize the removed acid-unstable groups outside the resist upper layer film, creating a difference in the number of carbon atoms between the unexposed and exposed portions; removing the resist upper layer film from the exposed portion by dry development using an oxygen-containing gas plasma to separate the pattern; and etching the pattern of the resist upper layer film onto the lower multilayer.

A photoresist composition is disclosed, the photoresist composition comprising: a first polymer comprising first repeat units, the first repeat units comprising an acid-labile group; and a second polymer comprising repeat units derived from one or more monomers having formula (4); a photoacid generator; and a solvent, wherein Z 1 , Z 2 , R 1 , R 2 , and L are as described herein, and P is a polymerizable group.