104 results about "Acid labile" patented technology

The resist composition exhibits a high contrast, improved maximum resolution, and satisfactory sensitivity and line width roughness (LWR) when processed by lithography using high-energy radiation, especially electron beam (EB) and EUV, and a pattern forming process using the resist composition. The resist composition comprising (A) a base polymer containing a polymer comprising repeat units having an acid labile group and repeat units having a carboxy group, (B) an organic solvent, and (C) a hypervalent iodine compound having formula (1):

To provide a chemically amplified positive resist composition that can give a resist film which has extremely high isolated space resolution, small LER, excellent rectangularity, and on which formation of a resist pattern with suppressed etching resistance or pattern collapse is possible, and a resist pattern forming method using the chemically amplified positive resist composition.SOLUTION: A chemically amplified positive resist composition contains: (A) a base polymer which includes a repeating unit derived from hydroxystyrene or hydroxynaphthalene and a repeating unit derived from hydroxystyrene in which a hydroxy group is protected by acid-labile group or hydroxynaphthalene in which a hydroxy group is protected by acid-labile group, and in which dissolubility to alkali aqueous solution increases by acid action, and a dispersion degree is 1.0 to 1.19; (B) photo-acid generator expressed by the following formula (B); and (C) organic solvent.SELECTED DRAWING: None

To provide a carboxylate, a carboxylic acid generator, and a resist composition which allow a resist pattern having good CD uniformity to be produced.SOLUTION: There are provided: a carboxylic acid generator containing a carboxylate represented by formula (I); and a resist composition. [In the formula, L10 represents a single bond or a substituted / unsubstituted hydrocarbon group; R5A and R5B each represent -X1-R10 or the like, and each X1 represents -CO-O-, -O-CO- or the like; R10 represents an acid-labile group; L1A, L1B, L2 and L3 each represent a single bond or a substituted / unsubstituted alkanediyl group; X3 represents -O-, -CO- or the like; Ar1 and Ar2 each represent an aromatic hydrocarbon group; R3 and R6 each represent a fluorine atom, a fluorinated alkyl group or the like; and Z+ represents an organic cation.]SELECTED DRAWING: None

To provide a resist composition and the like which achieve high sensitivity during the formation of a resist pattern and enhances both effects of roughness reduction and film loss suppression.SOLUTION: The present invention employs a resist composition which contains a copolymer that has a constituent unit represented by general formula (a00), a constituent unit represented by general formula (a01), and a constituent unit represented by general formula (a02). In the formulas: R0a, R0b, R01 and R02 are each independently an alkyl group having 1 to 5 carbon atoms, a halogenated alkyl group having 1 to 5 carbon atoms, or a hydrogen atom; L00 and L01 are each independently a divalent linking group or a single bond; L02 is a divalent linking group; RAr is an aromatic group which may have a specific substituent; RX is an acid dissociable group; and Z- is an anion group.SELECTED DRAWING: None

To provide a resist composition capable of producing a resist pattern having good line edge roughness.SOLUTION: The resist composition contains a compound represented by formula (I), a resin having an acid-labile group, and an acid generator. [In the formula, R2 represents * -X1-Ph - L1 - OH. Ph represents a substituted or unsubstituted phenylene; R3 represents a halogen atom, a hydroxy group, a haloalkyl group or an alkyl group, and - CH2 - included in the alkyl group may be replaced by - O - or - CO -. m2 is an integer of 1 to 4, m3 is an integer of 0 to 3, provided that 1 ≤ m2 + m3 ≤ 4, and one or more of L1, R1, R2, and R3 have a halogen atom. ] SELECTED DRAWING: None

A polymer obtained from a monomer structured to have an acid labile group attached to a hydroxy group on an aromatic ring and a SF5 group attached to the aromatic ring, which are attached to adjoining carbon atoms, has excellent solvent solubility. A chemically amplified resist composition comprising the polymer exhibits a high sensitivity and contrast and forms a pattern of satisfactory profile having improved lithography properties such as EL, LWR, CDU and DOF.

A resist composition includes (A1) a resin including a structural unit represented by formula (I) and a structural unit represented by formula (II), and no acid-labile group, (A2) a resin having an acid-labile group, and an acid generator:wherein R1 and R2 each represent a hydrogen atom, a halogen atom, or an alkyl group which may have a halogen atom, X1 and X2 each represent a single bond or *—CO—O—, L1 represents a single bond or a hydrocarbon group which may have a substituent, and —CH2— included in the group may be replaced by —O—, —S—, —SO2— or —CO—, ring W represents a hydrocarbon ring which may have a substituent, mi and mk represent an integer of 1 to 4, and L2 represents a single bond or a hydrocarbon group which may have a substituent, and —CH2— included in the group may be replaced by —O—, —S—, —SO2— or —CO—.

A resist composition contains a resin including a structural unit having an acid-labile group, a photosensitive agent, and an acid generator. The acid generator contains a compound in which a maximum molar absorption coefficient in the wavelength range of 355 to 375 nm is 6,000 (L / (mol·cm)) or less The content of the photosensitive agent is 10% by mass or less in the solid content of the resist composition. When a film is formed from the resist composition with the film thickness used, a minimum transmittance of radiation of the film in the wavelength range of 355 to 375 nm is 23% or more. Also described are a method for producing a resist pattern, and a method for producing a plated molded article.

A resist composition comprising a base polymer comprising repeat units having a salt structure consisting of a sulfonic acid anion bonded to a polymer backbone and a sulfonium cation having an acid labile group of triple bond-bearing tertiary ester type as the acid generator exhibits a high sensitivity and reduced LWR or improved CDU.

To provide a carboxylate, a carboxylic acid generator, and a resist composition which allow a resist pattern having good CD uniformity to be produced.SOLUTION: There are provided: a carboxylic acid generator containing a carboxylate represented by formula (I); and a resist composition. [In the formula, W1 represents a substituted / unsubstituted cyclic hydrocarbon group; L1 represents a single bond or a substituted / unsubstituted hydrocarbon group, L2 represents a substituted / unsubstituted hydrocarbon group, and -CH2- in the groups may be substituted with -O-, -S-, -SO2-, -NR11-, -CO- or the like; R1 and R11 each represent a hydrogen atom or an alkyl group; L3 represents a single bond or an alkanediyl group, and -CH2- in the group may be substituted with -O- or -CO-; R5 represents -X51-R10 or -X52-L11-X51-R10, X51 and X52 each represent -CO-O-, -O-CO- or the like, L11 represents a substituted / unsubstituted hydrocarbon group, and R10 represents an acid-labile group; and Z+ represents an organic cation.]SELECTED DRAWING: None

A method of diagnosing Alzheimer's disease and related dementias (ADRD) in a patient comprising obtaining a plasma sample from the patient; determining a level of a biochemical sulfide in the plasma sample from the subject by trapping volatilized H2S in the plasma sample using alkaline buffer with monobromobiamine, and detecting the level of biochemical sulfide in the plasma sample, the biochemical sulfide being one of acid-labile sulfide, bound sulfide, and total sulfide; and diagnosing the patient with ADRD when the level of the biochemical sulfide is at least an elevated threshold level for the biochemical sulfide.

The invention belongs to the technical field of integrated circuit materials, and particularly relates to mixed resin for deeply removing metal impurities in a photoresist solution and a method thereof. The mixed resin comprises chelating resin, modified resin and macroporous adsorption resin. The method disclosed by the invention comprises the step of enabling a photoresist solution to pass through the PFA column filled with the mixed resin disclosed by the invention. The metal impurities of the photoresist solution purified by the mixed resin can be less than or equal to 15ppb, and the purified photoresist solution is neutral. The mixed resin and the method disclosed by the invention are particularly suitable for treating a photoresist solution with acid-unstable components, and have wide application prospects and good economic benefits in the field of integrated circuit materials.

[Problem] To provide a polymer, a photoresist composition containing the same, and a pattern forming method. [Solution] A polymer comprising a first repeating unit containing a sulfone group directly bonded to a group of formula -C(Ra)(Rb)-, and a second repeating unit containing an acid-unstable group, a base-degradable group, a polar group, or a combination thereof, wherein Ra and Rb in the formula are each independently hydrogen, halogen, substituted or unsubstituted C1-30 alkyl, substituted or unsubstituted C3-30 cycloalkyl, substituted or unsubstituted C3-30 heterocycloalkyl, substituted or unsubstituted C2-30 alkenyl, substituted or unsubstituted C3-30 cycloalkenyl, substituted or unsubstituted C3-30 heterocycloalkenyl, substituted or unsubstituted C6-30 aryl, substituted or unsubstituted C7-30 arylalkyl, substituted or unsubstituted C7-30 alkylaryl, substituted or unsubstituted C2-30 heteroaryl, substituted or unsubstituted C3-30 heteroarylalkyl, or substituted or unsubstituted C3-30 alkylheteroaryl, but at least one of Ra and Rb is hydrogen.

An onium-salt-type monomer is represented by the formula (a), where “n1” is 0 or 1, “n2” is 1 to 4, “n3” is 0 to 2, “n4” is 0 or 1, “n5” is 0 to 4, and “n6” is 0 to 2; RA is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; RAL is an acid-labile group; R1 is a halogen atom, a nitro group, a cyano group; R2 is a halogen atom other than a fluorine atom, a nitro group, a cyano group; RF is a fluorine atom, a fluorinated saturated hydrocarbyl group, a fluorinated saturated hydrocarbyloxy group, or a fluorinated saturated hydrocarbylthio group having 1 to 6 carbon atoms; LA and LB are each a single bond, an ester bond; XL is a single bond or a hydrocarbylene group; and Z+ is an onium cation.

To provide a compound and a photoresist composition containing the same.SOLUTION: A compound represented by Formula (1): (wherein X is a group having a valency of r; each R1 is independently an organic group comprising an acid-labile group; m is an integer greater than or equal to 1; k is an integer from 1 to 5; and r is an integer from 2 to 10), wherein the compound is non-polymeric.SELECTED DRAWING: None

A carboxylic acid generating agent containing a carboxylate represented by formula (I) and a resist composition:wherein L10 is a single bond or a substituted / unsubstituted hydrocarbon group; W1 is an alicyclic hydrocarbon group having an iodine atom; L2 is a single bond or a substituted / unsubstituted hydrocarbon group; R5 is —X1-L12-R10 or —X2-L11-X1-L12-R10, X1 and X2 are each —CO—O—, —O—CO—, or the like, respectively, L11 is a substituted / unsubstituted hydrocarbon group, L12 is a single bond or a substituted / unsubstituted hydrocarbon group, R10 is an aromatic hydrocarbon group having one or more substituents, one or more of the substituents is —OR11, R11 is a hydrogen atom or an acid labile group; m5 is an integer of 1 to 4; and Z+ represents an organic cation.

To provide an onium salt type monomer excellent in solvent solubility, having high sensitivity and high contrast, excellent in EL, LWR, CDU and DOF, strong against pattern collapse and excellent also in etching resistance.SOLUTION: An onium salt monomer having the formula (a): Wherein n1 is 0 to 1, n2 is 1 to 4, n3 is 0 to 2, and n4 is 0 to 4, RA is H, F, methyl or trifluoromethyl, RAL is an acid labile group, R1 is halogen, nitro, cyano or the like, LA and LB are single bonds, ester bonds or the like, XL is a single bond or hydrocarbylene, Q1 and Q2 are H, F or fluorinated saturated hydrocarbyl, Q3 and Q4 are F or fluorinated saturated hydrocarbyl, and Z + is an onium cation. ) SELECTED DRAWING: None

To provide a carboxylate, a carboxylic acid generator, and a resist composition capable of producing a resist pattern having good CD uniformity.SOLUTION: The carboxylic acid generator and the resist composition contain a carboxylate represented by formula (I). [wherein L10 is a bond or a substituted or unsubstituted hydrocarbyl; W1 is an aliphatic hydrocarbyl having an iodine atom; L2 is a bond or a substituted or unsubstituted hydrocarbyl; R5 is - X1 - L12 - R10 or - X2 - L11 - - -, each of and being - CO-O -, - O-CO -, or the like; is a substituted or unsubstituted hydrocarbyl; is a bond or a substituted or unsubstituted hydrocarbyl; is an aromatic hydrocarbyl having one or more substituents; L11 X1 L12 X2 L12 R10 X1 R10, At least one of the substituents is -OR11, R11 is hydrogen or an acid labile group, m5 is an integer of 1 to 4, and Z + is an organic cation. ] SELECTED DRAWING: None

The present invention relates to the fragment-based synthesis of peptides, in particular the peptide LL37. In specific the present invention relates to a method for fragmented solid phase synthesis of an LL37 peptide of SEQ ID NO: 1, or a variant thereof, comprising providing a first fragment of LL37, or a variant thereof, coupled to a first resin solid support by a cleavable linker, providing at least one further side chain protected fragment of LL37 coupled to a second resin solid support, wherein the fragment-resin linker is acid labile, cleaving the further side chain protected fragment(s) from the second solid support without deprotecting the side chains, and sequentially coupling the first and further fragments to produce a peptide of SEQ ID NO: 1, or a variant thereof.

A method includes forming a protective layer over a substrate edge and a photoresist over a substrate. Protective layer removed and photoresist exposed to radiation. Protective layer made of composition including acid generator and polymer having pendant acid-labile groups. Pendant acid-labile groups include polar functional groups; acid-labile groups including polar switch functional groups; acid-labile groups, wherein greater than 5% of pendant acid-labile groups have structurewherein R1 is C6-C30 alkyl group, cycloalkyl group, hydroxylalkyl group, alkoxy group, alkoxyl alkyl group, acetyl group, acetylalkyl group, carboxyl group, alkyl carboxyl group, cycloalkyl carboxyl group, saturated or unsaturated hydrocarbon ring, or heterocyclic group; and R2 is C4-C9 alkyl group, cycloalkyl group, hydroxylalkyl group, alkoxy group, alkoxyl alkyl group, acetyl group, acetylalkyl group, carboxyl group, alkyl carboxyl group, or cycloalkyl carboxyl group; polymer having pendant acid-labile groups and lactone pendant groups; or polymer having pendant acid-labile groups and carboxylic acid groups.

To provide a salt, an acid generator, and a resist composition which allow a resist pattern having good line edge roughness to be produced.SOLUTION: There are provided: an acid generator containing a salt represented by formula (I); and a resist composition. [In the formula, Q1, Q2, R11 and R12 each represent an H atom, an F atom or the like; z represents an integer of 0-6; X1 and X3 each represent -O-, -CO- or the like; X1A represents -CO-O-, -O-CO- or the like; mm1 represents 0 or 1; L10 represents a single bond or a substituted / unsubstituted hydrocarbon group; R5A and R5B each represent -X1A-R10 or the like; R10 represents an acid-labile group; and Z+ represents an organic cation.]SELECTED DRAWING: None

To provide a carboxylate, a carboxylic acid generator, a resist composition and the like capable of producing a resist pattern having good pattern collapse resistance.SOLUTION: There are provided a carboxylate represented by formula (I), a carboxylic acid generator, and a resist composition. Wherein m10 represents an integer of 1 to 3, m11 represents an integer of 0 to 2, A1 / A2 represents a bond or a hydrocarbyl group, Ar1 / Ar2 represents an aromatic hydrocarbyl group or a heterocyclic hydrocarbyl group, R1 / R4 represents a hydroxy group, - X1 -, or the like, represents - CO-O -, - O-CO -, or the like, represents an acid-labile group, and each represent a halogen atom, a hydrocarbyl group, or the like, with the proviso that and may be bonded to each other to form a ring containing X +, R2 R10 R3 R3 X1 R2 R10, -CH2 - in the ring may be replaced by -O -, - S - or the like; m1 is an integer of 1 to 5, mm1 is an integer of 2 to 5, m2 is an integer of 0 to 4, m3 and m4 are each an integer of 0 to 5, and mm4 is an integer of 0 or 1; and X0 represents an optionally substituted C1-72 hydrocarbyl group. ] SELECTED DRAWING: None

A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. The photoresist layer includes a photoresist composition including a polymer. The polymer includes a monomer unit having a pendant sensitizer and crosslinking group, and a monomer unit having a pendant acid labile group. The photoresist layer is selectively exposed to actinic radiation, and the selectively exposed photoresist layer is developed.

A process for deprotecting an organic compound is described, involving the use of an acid to remove an acid-labile protecting group, and a cation scavenger to react with the protecting group once it has been removed. Also described are cation scavengers suitable for use in the processes described herein, as well as a method for preparing a defined monomer sequence polymer. The cation scavenger has the following Formula I: A-B-C−D+ wherein A is a group capable of forming a covalent bond with the acid-labile protecting group once removed from the organic compound; B is absent or is a linking moiety; C− is a negatively charged group; and D+ is a counter ion.

An object is to provide a resist composition, a resin, a compound, etc. that can produce a resist pattern having good CD uniformity. 【Solution means】A resist composition containing a resin containing a structural unit represented by formula (IP). TIFF2026055806000225.tif39124[In the formula, R 0 is an alkyl group which may have a halogen atom, etc.; X 1 is a single bond, -O-, -CO-, etc.; L 1 is a single bond or a substituted / unsubstituted hydrocarbon group; Ar is a substituted / unsubstituted aromatic hydrocarbon group; A 1 is a hydrocarbon group; R 2 is a halogen atom or a hydrocarbon group; R 3 represents a hydrogen atom or an acid labile group, or COOR 3 and R 2 may together form a group having an acetal ring structure; m1 represents an integer of 1 to 6, and m2 represents an integer of 0 to 4.]

The present invention relates to a chemically amplified positive resist composition and a resist pattern forming method. The present invention provides a chemically amplified positive resist composition which is excellent in solvent solubility, high in sensitivity, high in contrast, excellent in lithography properties such as resolution, LER, and the like, and in which development defects are still suppressed and etching resistance is also excellent at the time of fine pattern formation, and a pattern forming method using the same in optical lithography using high-energy rays. A chemically amplified positive resist composition comprising (A) a base polymer containing a polymer which contains a repeating unit represented by the following formula (A1) and whose solubility in an aqueous alkali solution increases due to acid action, and (B) a photo-acid generator composed of an onium salt represented by the following formula (B). In the formula, Z + is an onium cation, Ar AL is an acid-labile group-containing group represented by the following formula (AL), but at least one Ar AL and the carbon atom adjacent to the carbon atom bonded to -SO3 ‑ is bonded.

An onium salt containing an aromatic sulfonic acid anion having an acid labile group and iodine on an aromatic ring, but not fluorine is provided. A chemically amplified resist composition comprising the onium salt as a photoacid generator has satisfactory solvent solubility, high sensitivity, and high contrast, and forms a resist film with improved lithography properties including EL and LWR.

To provide a resist composition from which a resist pattern having good CD uniformity (CDU) can be produced.SOLUTION: The resist composition contains: a resin containing a structural unit represented by formula (a2-A) and a structural unit having an acid-labile group; and a salt represented by formula (I). [In the formula (I), Q1 and Q2 each represent an F atom or a perfluoroalkyl group; X1 and X2 each represent -CO-O-, -O-CO- or the like; L1 represents a linear alkanediyl group; R3' represents an alicyclic hydrocarbon group; the alicyclic hydrocarbon group does not have an alkyl group; the alicyclic hydrocarbon group has one or more substituents, or one or more -CH2- groups contained in the alicyclic hydrocarbon group are substituted with -O-, -S- or the like; and Z+ represents an organic cation.]SELECTED DRAWING: None

An actinic ray- or radiation-sensitive resin composition forms a pattern having excellent LWR performance. A resist film, pattern forming method, and method for manufacturing an electronic device employ the composition. The composition includes an acid-decomposable resin including a repeating unit having an acid-decomposable group in which an acid group having a pKa of 13 or less is protected by an acid labile leaving group, and one or more compounds (PAGs) that generate an acid upon irradiation with actinic rays or radiation, selected from a compound (I) and a compound (II). The content of the acid-decomposable resin is 10% by mass or more and that of the PAGs is 10% by mass or more with respect to the total solids content. The acid-decomposable resin has a halogen atom in a repeating unit other than a repeating unit having a group that generates an acid upon irradiation with actinic rays or radiation.