3940results about "Photosensitive material processing" patented technology

Various embodiments described herein relate to methods, apparatuses, and systems for post-development treatment of a metal-containing photoresist mask to improve lithographic performance. After development, the metal-containing photoresist mask may be exposed to one or more of the following treatments: thermal anneal, plasma exposure, exposure to reactive gases, and selective deposition of a protective film. In some embodiments, the metal-containing photoresist mask is exposed to one or more reactive gases to compositionally change the photoresist mask and / or selectively deposit a protective film on top surfaces and sidewalls of the photoresist mask. The treated photoresist mask may exhibit increased line CD for reduced dose-to-size and improved etch resistance.

The present disclosure relates to the use of a metal chelator to treat an exposed photoresist film. In particular embodiments, the metal chelator is employed to remove an interfacial area that is disposed between exposed and unexposed areas or disposed within an exposed area, thereby enhancing patterning quality.

Process condition management facilitates the combination of dry development and etching into a single process chamber; eliminating the necessity for a post-dry development bake step during semiconductor manufacturing. Methods and apparatuses for rapidly instituting a large drop in process chamber pressure allow thermal dry development and an O2 flash treatment or thermal dry development and plasma hardmask open operations to take place without wafer transfer.

Dry development or dry removal of metal-containing extreme ultraviolet radiation (EUV) photoresist is performed in atmospheric conditions or performed in process tools without vacuum equipment. Dry removal of the metal-containing EUV photoresist may be performed under atmospheric pressure or over-atmospheric pressure. Dry removal of the metal-containing EUV photoresist may be performed with exposure to an air environment or with non-oxidizing gases. A process chamber or module may be modified or integrated to perform dry removal of the metal-containing EUV photoresist with baking, wafer cleaning, wafer treatment, or other photoresist processing function. In some embodiments, the process chamber for dry removal of the metal-containing EUV photoresist includes a heating assembly for localized heating of a semiconductor substrate and a movable discharge nozzle for localized gas delivery above the semiconductor substrate.

Various embodiments herein relate to methods, apparatus, and systems for baking metal-containing on a semiconductor substrate in the presence of a reactive gas species. For example, the method may include receiving the substrate in a process chamber, the substrate having a photoresist layer thereon, where the photoresist layer includes a metal-containing photoresist material; flowing a reactive gas species from a gas source, through a gas delivery line, into the process chamber, and exposing the substrate to the reactive gas species in the process chamber; and baking the photoresist layer while the substrate is exposed to the reactive gas species.

Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using an organic vapor such as a carboxylic acid. In some implementations, the organic vapor is trifluoroacetic acid. In some implementations, the organic vapor is hexafluoro-acetylacetone. A metal-containing resist film such as an EUV-sensitive organo-metal oxide may be deposited on a semiconductor substrate using a dry or wet deposition technique. The metal-containing resist film on the semiconductor substrate may be developed using the organic vapor, or residue of metal-containing resist material formed on surfaces of a process chamber may be removed using the organic vapor.

Dry development or dry removal of metal-containing extreme ultraviolet radiation (EUV) photoresist is performed in atmospheric conditions or performed in process tools without vacuum equipment. Dry removal of the metal-containing EUV photoresist may be performed under atmospheric pressure or over-atmospheric pressure. Dry removal of the metal-containing EUV photoresist may be performed with exposure to an air environment or with non-oxidizing gases. A process chamber or module may be modified or integrated to perform dry removal of the metal-containing EUV photoresist with baking, wafer cleaning, wafer treatment, or other photoresist processing function. In some embodiments, the process chamber for dry removal of the metal-containing EUV photoresist includes a heating assembly for localized heating of a semiconductor substrate and a movable discharge nozzle for localized gas delivery above the semiconductor substrate.

Process condition management facilitates the combination of dry development and post-development treatment into a single process chamber; eliminating the necessity for a post-dry development bake step in a separate chamber during semiconductor manufacturing. Thermal dry development and plasma dry development may be performed in the same chamber. Thermal dry development, plasma dry development and passivation such as an O2 flash treatment; or thermal dry development, plasma dry development, passivation and hardening operations are enabled without wafer transfer.

Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

As a high-performance resist material that can have high purity and uniform solubility, the following tin compound is provided. The tin compound includes: a tin atom; an organic group R; and at least one of an oxo-ligand and a hydroxo-ligand, wherein the tin compound has a diffraction angle 2θ (°) of a peak with a strongest intensity between 5.00 to 15.00° in X-ray diffraction measurement, the strongest intensity peak has a half-value width of 1.00 to 4.00°, and the organic group R has 1 to 30 carbon atoms.

The invention provides low-corrosion alkaline photoresist stripping liquid as well as a preparation method and application thereof. The low-corrosion alkaline photoresist stripping liquid comprises the following components in parts by weight: 0.1-5 parts of a metal protective agent; 5-25 parts of an organic base; 10-40 parts of a polar solvent; 15 to 45 parts of ultrapure water; the metal protective agent comprises water-soluble carbon dots and alkyl phosphate. The invention also discloses a preparation method of the low-corrosion alkaline photoresist stripping liquid, which comprises the following steps: dissolving the water-soluble carbon dots in ultrapure water, then adding the alkyl phosphate and the polar solvent, stirring at room temperature until the solution is clear, adding the organic alkali, and uniformly stirring to obtain the low-corrosion alkaline photoresist stripping liquid. The low-corrosion alkaline photoresist stripper almost has no corrosion to copper and alloys thereof, and has good application prospects and large-scale popularization potential in the field of photoresist stripping of display panels.

Process condition management facilitates the combination of dry development and etching into a single process chamber; eliminating the necessity for a post-dry development bake step during semiconductor manufacturing. Methods and apparatuses for rapidly instituting a large drop in process chamber pressure allow thermal dry development and an O2 flash treatment or thermal dry development and plasma hardmask open operations to take place without wafer transfer.

Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.

Provided are a photosensitive transfer material capable of producing a resin pattern with reduced defects, a method for producing a resin pattern using the photosensitive transfer material, a method for producing circuit wiring, and a method for producing a touch panel, and a polyethylene terephthalate film. The present invention provides a temporary support and a photosensitive resin layer disposed on the temporary support, and the number of foreign particles having a major axis of 3 μm or more contained in the temporary support is 0.5 / mm 2 The following are photosensitive transfer materials and their applications.

To provide a patterning process used for a resist underlayer film material having excellent dry etching resistance.SOLUTION: A compound for forming a metal-containing film is represented by the general formula (M) in the figure, where each T independently represents the general formula (T-1) or (T-2) in the figure; P independently represents *OCOR, where the asterisk represents an attachment point to the Sn atom and R represents a monovalent organic group; each Q independently represents a C1-20 alkyl group, cycloalkyl group, aliphatic unsaturated hydrocarbon group, alkoxy group, or C6-30 aryl group.SELECTED DRAWING: Figure 1

A device for modelling physiological and pathophysiological states of the brain is provided. The device comprises a hydrogel with micropattern channels having a length, width and depth. The micropattern channels comprise cells selected from the group consisting of neurons, astrocytes, microglia, oligodendrocytes, neuronal organoids, cancer cells, cancer spheroids, brain tumoral cells and combinations thereof.

The invention discloses a photoresist stripping liquid composition and application thereof, and the photoresist stripping liquid composition comprises the following components by mass: 10-40wt% of an alcohol ether solvent, 10-40wt% of a solvent, 10-40wt% of a solvent, 10-40wt% of a solvent, and 10-40wt% of a solvent. 20 wt% to 50 wt% of a polyol solvent; 0.5 wt% to 10 wt% of an alkanolamine compound; 0.02 wt%-2 wt% of a metal corrosion inhibitor; 0.01 wt% to 1 wt% of a surfactant; 0.01 wt%-1 wt% of an auxiliary additive; and the balance of water. According to the invention, the octanol / water partition coefficient of the mixed solvent of the alcohol ether solvent and the polyhydric alcohol is limited, so that the dissolving capacity of the stripping liquid to photoresist is improved, the service life of the stripping liquid is prolonged, and the stripping liquid is easy to wash and remove and less in residual quantity; in addition, the organic acid metal corrosion inhibitor and the metal inhibitor in the photoresist stripping liquid composition are matched with each other, so that the photoresist stripping liquid composition can be compatible with copper and aluminum processes, and corrosion of the photoresist stripping liquid composition to a metal layer is reduced.

The various embodiments described herein relate to methods, apparatuses, and systems for post-development processing of metal-containing photoresist masks to improve lithography performance. After development, the metal-containing photoresist mask may be exposed to one or more of the following processes: thermal annealing, plasma exposure, exposure to a reactive gas, and selective deposition of a protective film. In some embodiments, the metal-containing photoresist mask is exposed to one or more reactive gases to change the composition of the photoresist mask and / or selectively deposit a protective film on the top surface and sidewalls of the photoresist mask. The processed photoresist mask may exhibit an increase in line CD for reduction of dose-to-size and improvement of etch resistance.

The resist composition exhibits a high contrast, improved maximum resolution, and satisfactory sensitivity and line width roughness (LWR) when processed by lithography using high-energy radiation, especially electron beam (EB) and EUV, and a pattern forming process using the resist composition. The resist composition comprising (A) a base polymer containing a polymer comprising repeat units having an acid labile group and repeat units having a carboxy group, (B) an organic solvent, and (C) a hypervalent iodine compound having formula (1):

Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.

Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: mixing a vapor stream of an organometallic precursor with a vapor stream of a counter-reactant so as to form a polymerized organometallic material; and depositing the organometallic polymer-like material onto the surface of the semiconductor substrate. The mixing and depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

The present disclosure relates to precursor compositions for forming irradiation sensitive films. In particular, the disclosure is directed to use of metal-containing precursors having haloaliphatic or unsaturated substituents, or other reactive moieties which advantageously react in the presence of extreme ultraviolet exposure to form resist films having increased etch resistance and / or reduced shrinkage upon processing. Alternatively, the use of metal-containing precursors having haloaliphatic or unsaturated substituents, or other reactive moieties for patterning structures having carbon-containing underlayers may advantageously react with the underlayer to increase adhesion of the resist film to the underlayer.

In the case of forming a fine resist pattern, it is desired to further reduce the roughness of the resist pattern.SOLUTION: A substrate processing apparatus comprising: a heat treatment unit configured to bake a resist film; an exposure unit configured to irradiate the resist film having a portion irradiated with a first radioactive ray with a second radioactive ray; a development unit configured to form a resist pattern by development for removing a part of the resist film; and a control unit configured to control the exposure unit such that the second radioactive ray is collectively irradiated to an entire region of the resist film including the portion irradiated with the first radioactive ray and a portion other than the portion irradiated with the first radioactive ray. The first radiation is ionizing radiation or non-ionizing radiation, and the second radiation is non-ionizing radiation. When the first radiation is non-ionizing radiation, the second radiation is non-ionizing radiation having a wavelength longer than the wavelength of the first radiation. The resist film includes a metal oxide photoresist material.SELECTED DRAWING: Figure 1

A photosensitive surface treating agent containing a compound represented by the following Formula (M1). In Formula (M1), R1 is a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms, Y1 is a linear or branched alkylene group having 1 to 4 carbon atoms or a single bond, and the terminal carbon atom of the alkyl group for R1 may be bonded to a carbon atom constituting the alkylene group for Y1, and R1 and Y1 may form a ring. R2 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, R3 and R4 are each independently an alkyl group having 1 to 3 carbon atoms, n0 is an integer of 0 or more, and X is a halogen atom or an alkoxy group.

The invention relates to the field of polyimide materials, in particular to a positive photosensitive polyimide photoresist, a polyimide film and application of the positive photosensitive polyimide photoresist and the polyimide film. The positive photosensitive polyimide photoresist with excellent performance can be prepared by taking novel water-soluble polyamic acid ester with good dielectric property, low water absorption, heat resistance and the like as film-forming resin and combining the film-forming resin with the quinonediazide compound photosensitive component, the silane coupling agent and the organic solvent; the main film-forming component polyamic acid ester is a corresponding water-soluble polyimide precursor synthesized by using a series of simple and easily available polymeric monomers, and the realization of the water solubility is not limited to specific groups such as hydroxyl, carboxyl and the like in molecules. The photoresist has the advantages of high light sensitivity, high resolution, good thermal stability and chemical resistance, good heat and humidity resistance, good adhesion to various substrates and the like, an alkaline aqueous solution can be used as a developing solution, the loss of a film in a non-exposure area in the developing process is low due to low water absorption of the alkaline aqueous solution, and the developing time is short.

1. A resin composition for 3D printing of objects, comprising: a photocurable component A serving as a 3D structurable matrix; a component B serving as a synergistic combination of flame retardants; and at least one photoinitiator suitable for polymerization by light excitation, wherein, based on the total weight of components A and B, the amount of curable component A is in the range of 60% to 95% by weight, preferably 65% ​​to 90% by weight, and more preferably 70% to 85% by weight; the amount of flame retardant component B is in the range of 5% to 40% by weight, preferably 10% to 35% by weight, and more preferably 15% to 30% by weight, based on the total weight of components A and B; and the amount of photoinitiator is in the range of 0.01% to 10% by weight, based on the weight of component A alone.

The invention relates to the technical field of photoresist, in particular to a color photoresist spraying and developing process for a high-resolution display panel, which comprises the following steps: S1, preparing composite color photoresist; s2, substrate pretreatment; s3, a spraying process; s4, pre-baking is carried out; s5, exposure is carried out; s6, developing; s7, carrying out post-baking; by optimizing the components and process parameters of the color photoresist, the core problems of difficult high-resolution forming, poor film adhesion and insufficient solvent resistance in the traditional process are effectively solved: on one hand, the modified resin and the fluorine-containing monomer are combined and matched with the plasma substrate for pretreatment, so that the adhesion grade of the photoresist film and the substrate reaches 0 grade; the solvent wiping resistance is more than 300 times, so that the long-term use reliability requirement of a terminal product is met; and on the other hand, spraying, pre-baking, exposure and developing parameters are synergistically regulated and controlled, and a stable color paste dispersion system is combined, so that high-resolution pattern forming greater than or equal to 590PPI is realized.

The invention relates to the field of semiconductor device manufacturing, in particular to an anti-sputtering device, a cleaning device and substrate processing equipment. The anti-sputtering device is used for preventing liquid medicine sprayed to the substrate by the nozzle from sputtering into the cavity, and specifically comprises a first protective cover, and the nozzle is arranged in the first protective cover; the second protection cover is arranged on the periphery of the base plate and the first protection cover in a surrounding mode when the nozzle sprays the liquid medicine to the base plate; the relation between the first protective cover and the second protective cover is shown as h / r < H / R, and h is the height from the lower end face of the first protective cover to the substrate; r is the farthest horizontal distance between the nozzle and the edge of the lower end face of the first protective cover; h is the height from the top end of the second protective cover to the substrate; r is the horizontal distance between the top end of the second protective cover and the nozzle. By limiting the positions of the first protective cover and the second protective cover, the anti-splashing device can more effectively prevent the liquid medicine from splashing.

A substrate processing method includes: a preparation operation of preparing a substrate having an underlying film; a first film-formation operation of forming a first film on the underlying film, the first film being made of a material containing an element having a higher EUV absorption cross section than the underlying film; and a second film-formation operation of forming a second film on the first film, the second film being a metal-containing resist film.

The invention discloses application of a hydroxylamine compound cleaning solution. In particular to application of a hydroxylamine compound cleaning solution in cleaning plasma etched and ashed wafers. The hydroxylamine compound cleaning solution is prepared from the following components in percentage by mass: 1 to 30 percent of a hydroxylamine compound, 1 to 5 percent of a corrosion inhibitor, 0.1 to 5 percent of a chelating agent, 0.01 to 5 percent of a nonionic surfactant and 1 to 50 percent of a water-soluble organic solvent and water. The sum of the mass fractions of the components is 100%. The hydroxylamine compound cleaning fluid is safe and environment-friendly, solves the problem of high cost caused by fixed raw material sources, reduces the cost, and is safe and reliable.