1864results about "Photosensitive material processing" patented technology

Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.

Provided are a photosensitive transfer material capable of producing a resin pattern with reduced defects, a method for producing a resin pattern using the photosensitive transfer material, a method for producing circuit wiring, and a method for producing a touch panel, and a polyethylene terephthalate film. The present invention provides a temporary support and a photosensitive resin layer disposed on the temporary support, and the number of foreign particles having a major axis of 3 μm or more contained in the temporary support is 0.5 / mm 2 The following are photosensitive transfer materials and their applications.

Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.

In the case of forming a fine resist pattern, it is desired to further reduce the roughness of the resist pattern.SOLUTION: A substrate processing apparatus comprising: a heat treatment unit configured to bake a resist film; an exposure unit configured to irradiate the resist film having a portion irradiated with a first radioactive ray with a second radioactive ray; a development unit configured to form a resist pattern by development for removing a part of the resist film; and a control unit configured to control the exposure unit such that the second radioactive ray is collectively irradiated to an entire region of the resist film including the portion irradiated with the first radioactive ray and a portion other than the portion irradiated with the first radioactive ray. The first radiation is ionizing radiation or non-ionizing radiation, and the second radiation is non-ionizing radiation. When the first radiation is non-ionizing radiation, the second radiation is non-ionizing radiation having a wavelength longer than the wavelength of the first radiation. The resist film includes a metal oxide photoresist material.SELECTED DRAWING: Figure 1

The invention relates to the technical field of photoresist, in particular to a color photoresist spraying and developing process for a high-resolution display panel, which comprises the following steps: S1, preparing composite color photoresist; s2, substrate pretreatment; s3, a spraying process; s4, pre-baking is carried out; s5, exposure is carried out; s6, developing; s7, carrying out post-baking; by optimizing the components and process parameters of the color photoresist, the core problems of difficult high-resolution forming, poor film adhesion and insufficient solvent resistance in the traditional process are effectively solved: on one hand, the modified resin and the fluorine-containing monomer are combined and matched with the plasma substrate for pretreatment, so that the adhesion grade of the photoresist film and the substrate reaches 0 grade; the solvent wiping resistance is more than 300 times, so that the long-term use reliability requirement of a terminal product is met; and on the other hand, spraying, pre-baking, exposure and developing parameters are synergistically regulated and controlled, and a stable color paste dispersion system is combined, so that high-resolution pattern forming greater than or equal to 590PPI is realized.

Provided are processes for development of photopatterned metal or metal oxide-based thin film photoresists post-EUV exposure for removal of non-volatile species and deterring etch stop. Repeated cycles of alternating treatment with an etchant and an oxidizing agent; or treatment with an etchant followed by treatment with a wash agent are effective techniques for removal of the undesired unexposed portion of a photoresist.

Provided are a washout processor and a method for manufacturing a flexographic printing plate precursor, which have good productivity and work efficiency. A washout processor that develops a flexographic printing plate precursor after imagewise exposure using a developer includes a station for attaching the flexographic printing plate precursor, and a measurement unit that measures at least one of a size or a thickness of the flexographic printing plate precursor and a position of the flexographic printing plate precursor on the station.

The present invention is a method for manufacturing a non-chemically amplified resist composition, including, in the following order, the steps of: (i) placing a carboxy-group-containing polymer, a hypervalent iodine compound, and a solvent in a container and mixing together to prepare a fundamental resist composition; (ii) collecting part of the fundamental resist composition, forming a resist film on a test substrate by using the collected fundamental resist composition, and evaluating a film physical property of the resist film; and (iii) adding an additional material to the fundamental resist composition and mixing together to achieve a target film physical property based on an evaluation result of the step (ii). This can provide: a method for manufacturing a non-chemically amplified resist composition whose quality is controlled to be constant; and a patterning process.

Provided are a resist composition including an organometallic compound represented by Formula 1 and an additive represented by Formula 2, and a pattern formation method using the same:Descriptions of M11, Rx, Ry, n, m, X2, Y2, Z2, L2, a2, b2, and c2 in Formulae 1 and 2 are provided in the specification.

To provide a protective film-forming composition against a basic aqueous hydrogen peroxide solution.SOLUTION: A protective film-forming composition against a basic aqueous hydrogen peroxide solution comprises: a cross-linking agent having, in a molecule, two or more of at least one group selected from the group consisting of a glycidyl group, a terminal epoxy group, an epoxycyclopentyl group, an epoxycyclohexyl group, an oxetanyl group, a vinyl ether group, an isocyanate group, and a blocked isocyanate group; a compound having a group represented by the following formula (1) in a side chain or at a terminal and having a weight average molecular weight of 800 or more; and an organic solvent. (In the formula, X1 represents a substituent which reacts with the cross-linking agent; R0 represents a direct bond or a C1-2 alkylene group; X2 represents a C1-2 alkyl group, a C1-2 alkoxy group, or a fluoro group; a represents an integer of 0-2; b represents an integer of 1-3; and b and c satisfy a relational expression, 1≤(b+c)≤5.)SELECTED DRAWING: None

The invention discloses a photoresist removing method and device and a reworking method of a photoetching process, and the photoresist removing method comprises the steps: providing a substrate, and enabling the surface of the substrate to be provided with photoresist; etching the photoresist by using etching gas with concentration difference in different directions to form an irregular glue layer structure; performing wet stripping treatment on the irregular adhesive layer structure; and carrying out surface hydrophobicity treatment on the substrate after the irregular adhesive layer structure is stripped. According to the invention, the defect that the photoresist on the silicon-based substrate collapses after reworking of the photoetching process can be eliminated.

Embodiments disclosed herein may include a method for developing a photopatterned metal-oxo photoresist. In one embodiment, the method may include pretreating the photopatterned metal-oxo photoresist using a pretreatment process and developing the photopatterned metal-oxo photoresist using a thermal dry development process to selectively remove portions of the photopatterned metal-oxo photoresist and form a resist mask. In one embodiment, the thermal dry development process includes a first sub-step and a second sub-step different from the first sub-step. In one embodiment, the process further includes post-treating the resist mask using a post-treatment process.

Process condition management facilitates the combination of dry development and etching into a single process chamber; eliminating the necessity for a post-dry development bake step during semiconductor manufacturing. Methods and apparatuses for rapidly instituting a large drop in process chamber pressure allow thermal dry development and an O2 flash treatment or thermal dry development and plasma hardmask open operations to take place without wafer transfer.

A processing method in one embodiment includes: a step that takes an image of the end face of a reference substrate, whose warp amount is known, over the whole periphery thereof using a camera to obtain shape data of the end face of the reference substrate; a step that takes an image of the end face of a substrate over the whole periphery thereof using a camera to obtain shape data of the end face of the substrate; a step that calculates warp amount of the substrate based on the obtained shape data; a step that forms a resist film on a surface of the substrate; a step that determines the supply position from which an organic solvent is to be supplied to a peripheral portion of the resist film and dissolves the peripheral portion by the solvent supplied from the supply position to remove the same from the substrate.

The invention discloses a compound semiconductor photoresist stripper, and a preparation method, application and cleaning method thereof. The compound semiconductor photoresist stripper comprises the following components by weight: 30-60 parts of a metal protective polar organic solvent; 30-60 parts of an aprotic polar organic solvent; 1-15 parts of a corrosion inhibitor; and 1-15 parts of an anionic surfactant. The invention not only discloses specific components and a preparation method of the compound semiconductor photoresist stripping liquid, but also discloses application of the compound semiconductor photoresist stripping liquid in effective removal of photoresist, and the compound semiconductor photoresist stripping liquid has a good protection effect on a substrate in the application. And corrosion can be effectively prevented. In addition, the two solvents are synergistically used, so that the photoresist can be more effectively removed.

In a method of patterning a substrate, a first relief pattern is formed based on a first layer deposited over the substrate. Openings in the first relief pattern are filled with a reverse material. The first relief pattern is then removed from the substrate and the reverse material remains on the substrate to define a second relief pattern. A fill material is deposited over the substrate, the fill material being in contact with the second relief pattern and being sensitive to photoacid generated by a photoacid generator in the second relief pattern. Selected portions of the second relief pattern are exposed to a first actinic radiation to generate photoacid in the selected portions of the second relief pattern. The photoacid is driven from the selected portions of the second relief pattern into portions of the fill material such that the portions of the fill material become soluble to a predetermined developer.

The present invention provides a processing solution for semiconductor devices that excels in suppressing defects, a method for processing substrates, and a method for manufacturing semiconductor devices. [Solution] The present invention provides a processing solution for semiconductor devices, a method for processing substrates, and a method for manufacturing semiconductor devices, all of which contain a quaternary ammonium hydroxide compound, a cyclic ether compound, and an alkyl ketone, wherein the total content of the cyclic ether compound and the alkyl ketone is 0.001 ppm or more and less than 5 ppm.

A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

The invention provides a developer composition for a metal-containing photoresist and a pattern forming method including a developing method using the developer composition. For the coordinate x, as specified by Korean solubility parameters ([delta] d, [delta] p, and [delta] h) of the developer composition, a solubility radius Ra with the coordinate a as a central value can be calculated, and a solubility radius Rb with the coordinate b as a central value can be calculated. And the distance () between the coordinate x and the coordinate a and the distance () between the coordinate x and the coordinate b, respectively, calculated by Equation 1 and Equation 2, may have a relationship lt; ra and gt; rb. Equation 1 = 4 ([delta] dx-[delta] da) 2 + ([delta] px-[delta] da) 2 + ([delta] hx-[delta] ha) 2 = 4 ([delta] dx-[delta] db) 2 + ([delta] px-[delta] pb) 2 + ([delta] hx-[delta] hb) 2

System for moving a flexible sheet (P), in particular a printing sheet or a printing sheet precursor, on a support surface in the direction of a treatment station (S2), such as a washing station, said system comprising: a support body (100) configured to support a sheet on its support surface and intended to be located upstream of said treatment station; a moving device (200) comprising sheet engagement means (250) configured to come into contact with a sheet in such a way as to engage with said sheet by adhesion or friction or a combination thereof in a moving mode and in which, by controlling said moving device (200), said sheet can slide on said support surface; a control device configured to control said moving device so as to cause said sheet to slide on said support body in the direction of said treatment station.

The invention provides a transfer printing seal for a photoresist nano structure, a manufacturing method and a curved surface photoetching method, and the transfer printing seal comprises the following components in percentage by mass: 40%-70% of N, N-dimethylacrylamide, 30%-60% of 4-hydroxybutyl acrylate, 0.5%-2% of polyethylene glycol diacrylate and 0.5%-2% of a photoinitiator. In the curved surface photoetching process, the transfer printing seal is heated to 90 DEG C and then is conformally attached to the upper surface of the photoresist nano-structure, and the high modulus of the transfer printing seal protects the photoresist nano-structure from being damaged and deformed; the surface of the curved surface is heated, the transfer printing seal with the photoresist nanostructure is heated to 90 DEG C and then is attached to the surface of the curved surface in a conformal mode, the transfer printing seal is slowly peeled off at a constant speed, the reversible high adhesion switching ratio and the high modulus switching ratio can be achieved under thermal stimulation, high-yield picking and releasing of the microstructure are achieved, the transferred microstructure can be protected in the transfer printing picking stage, and the yield of the microstructure is improved. And in the transfer printing release stage, the photoresist nano-structure can be fully attached and conformal with the curved surface, so that high-yield preparation of the photoresist nano-structure on the curved surface is realized.

A method for forming a photoresist pattern includes: (i) a step of forming a photoresist film on a support using a photoresist composition; (ii) a step of exposing the photoresist film; and (iii) a step of developing the exposed photoresist film to form a photoresist pattern, characterized in that the photoresist composition contains: a resin (A) whose solubility in the developer changes due to the action of an acid, an acid-generating agent (B) that generates acid upon exposure, a photodegradable alkali (D1), a solvent (S), and a compound (X) represented by the following formula (x-1), wherein the amount of solvent remaining in the photoresist film formed in step (i) is 910 ppm or more, wherein R 1 ~R 4 It is a hydroxyl group or an alkyl group having 1 to 5 carbon atoms, R 5 and R 6 It is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or an alkyl group having 1 to 10 carbon atoms obtained by substitution with a hydroxyl group.

The waste liquid collecting device comprises a first collecting cup, a second collecting cup and a honeycomb-shaped grating, the first collecting cup comprises a cup body, the cup body defines a containing space, the cup body is provided with a top opening and a bottom opening, the second collecting cup comprises an outer layer side wall, an annular bottom plate and an inner layer side wall which are sequentially connected, and the honeycomb-shaped grating is arranged on the outer layer side wall. The bottom of the cup body is movably connected with the top of the outer layer side wall, and the honeycomb-shaped grating is located in the containing space and covers the cup body. According to the waste liquid collecting device for the gluing developing machine, the honeycomb-shaped grating is arranged on the cup body of the first collecting cup, so that the probability of back-splashing of waste liquid can be effectively reduced, the problems of pattern defects, particle pollution and the like of wafers are further reduced, and the yield of the wafers is improved.

A method for producing a photosensitive substrate according to the present invention comprises: a process in which a photosensitive substrate, which has been exposed to light by scanning each one of a plurality of scan fields in the photosensitive substrate through a photomask in a first direction with use of pulsed laser beams that have a plurality of center wavelengths, is heated so that each one of the plurality of scan fields has a temperature distribution that has a temperature gradient in a second direction that intersects with the first direction on the surface of the photosensitive substrate; and a process in which after heating the photosensitive substrate, the photosensitive substrate is developed by suppling a developer liquid to the surface of the photosensitive substrate.

A method of forming a three-dimensional object is carried out by: (a) providing a carrier and an optically transparent member having a build surface, the carrier and the build surface defining a build region therebetween; (b) filling the build region with a polymerizable liquid, the polymerizable liquid comprising a mixture of: (i) a light polymerizable liquid first component, and (ii) a second solidifiable component that is different from the first component; (c) irradiating the build region with light through the optically transparent member to form a solid blocked polymer scaffold and advancing the carrier away from the build surface to form a three-dimensional intermediate having the same shape as, or a shape to be imparted to, the three-dimensional object, with the intermediate containing the second solidifiable component; and then (d) solidifying and / or curing the second solidifiable component to form from said three-dimensional intermediate the three-dimensional object.

The invention relates to a resist underlayer film forming composition, a pattern forming method, and a resist underlayer film forming method. The purpose of the present invention is to provide: a composition for forming a resist underlayer film, which functions as an anti-reflective film and has excellent alkaline hydrogen peroxide water resistance, good landfill / planarization characteristics, and dry etching characteristics; a pattern forming method using the composition; and a method for forming a resist underlayer film. A composition for forming a resist underlayer film, which is characterized by containing (A) a polymer compound having a structural unit (a1) represented by formula (A-1) and at least one structural unit (a2) selected from structural units represented by formulae (A-2) to (A-4), (B) a crosslinking agent represented by formula (B-1), and (C) an organic solvent.

To provide a composition for removing edge beads of a metal-containing resist, in detail, a composition for removing edge beads of a metal-containing resist that minimizes a resist residue.SOLUTION: A composition for removing edge beads of a metal-containing resist includes: an additive including at least one selected from a group consisting of phosphoric acid, a phosphorous acid-based compound, and a hypophosphorous acid-based compound and a carboxylic acid-based compound; and an organic solvent. A mixing mass ratio of the at least one selected from the group consisting of the phosphoric acid, the phosphorous acid-based compound, and the hypophosphorous acid-based compound to the carboxylic acid-based compound is 9:1 to 1.2:1.SELECTED DRAWING: Figure 1

The present application relates to the technical field of process optimization, and particularly relates to a printing process method for preventing oil leakage of a silk screen printing plate. The method comprises the following steps: dust removal and degreasing cleaning of the silk screen printing plate to obtain a clean and dry to-be-made screen plate; then, the front and back surfaces of the screen plate are synchronously coated with photosensitive paste, and repeated scraping is performed in the same direction, so that the photosensitive paste is uniformly filled in the screen holes and a continuous photosensitive layer is formed, and then drying is performed; a text pattern film is combined with the screen plate for exposure, and the text through hole is exposed through washing, and secondary drying is performed to stabilize the through hole structure; finally, the through state and edge shape of the text through hole are detected, and the qualified screen plate is screened for text silk printing, so that stable printing effect of preventing oil leakage is realized. Through fine control of the whole process of scraping, exposure and washing, and row-by-row detection of the text through hole, the present application can make the screen hole filling dense and the through hole edge complete, so that ink leakage in the text silk printing process is effectively prevented, and the printing consistency and stability are improved.

Provided are processes for development of photopatterned metal or metal oxide-based thin film photoresists post-EUV exposure for removal of non-volatile species and deterring etch stop. Repeated cycles of alternating treatment with an etchant and an oxidizing agent; or treatment with an etchant followed by treatment with a wash agent are effective techniques for removal of the undesired unexposed portion of a photoresist.

The application provides a photoresist waste liquid recycling device and process, by adding hydrochloric acid to the photoresist waste liquid in the acidification precipitation tank in the pretreatment module to adjust the pH value, the linear phenolic resin precipitation rate reaches more than 95%, and the linear phenolic resin can be used again to the production stage of the photoresist after centrifugal separation, a compound coagulant containing sulfide and polyaluminum chloride is added to the heavy metal capture tank in the pretreatment module, and the removal rate of heavy metal ions reaches 99.5%; then the photoresist fragments are separated by using an ultrafiltration device, and the diatomite modified by NaOH and polyetherimide is used for adsorption and decolorization, then two-stage vacuum distillation process is used to realize the recovery of high-purity solvents in the photoresist waste liquid, finally, the remaining residue is polymerized and cured by ultraviolet radiation, and the solid fuel with high heat value can also be prepared, so that the 'zero emission' and resource full recovery of the photoresist waste liquid are realized, and the treatment cost and environmental risk are significantly reduced.