792 results about "Extreme ultraviolet" patented technology

The present disclosure relates to a film formed with an organometallic precursor and an organic co-reactant, as well as methods for forming and employing such films. In particular embodiments, the films can be incubated after exposure to radiation, which can provide enhanced material differences between the exposed and unexposed regions. In non-limiting embodiments, the radiation can include extreme ultraviolet (EUV) or deep ultraviolet (DUV) radiation.

Dry development or dry removal of metal-containing extreme ultraviolet radiation (EUV) photoresist is performed in atmospheric conditions or performed in process tools without vacuum equipment. Dry removal of the metal-containing EUV photoresist may be performed under atmospheric pressure or over-atmospheric pressure. Dry removal of the metal-containing EUV photoresist may be performed with exposure to an air environment or with non-oxidizing gases. A process chamber or module may be modified or integrated to perform dry removal of the metal-containing EUV photoresist with baking, wafer cleaning, wafer treatment, or other photoresist processing function. In some embodiments, the process chamber for dry removal of the metal-containing EUV photoresist includes a heating assembly for localized heating of a semiconductor substrate and a movable discharge nozzle for localized gas delivery above the semiconductor substrate.

Dry development or dry removal of metal-containing extreme ultraviolet radiation (EUV) photoresist is performed in atmospheric conditions or performed in process tools without vacuum equipment. Dry removal of the metal-containing EUV photoresist may be performed under atmospheric pressure or over-atmospheric pressure. Dry removal of the metal-containing EUV photoresist may be performed with exposure to an air environment or with non-oxidizing gases. A process chamber or module may be modified or integrated to perform dry removal of the metal-containing EUV photoresist with baking, wafer cleaning, wafer treatment, or other photoresist processing function. In some embodiments, the process chamber for dry removal of the metal-containing EUV photoresist includes a heating assembly for localized heating of a semiconductor substrate and a movable discharge nozzle for localized gas delivery above the semiconductor substrate.

The invention discloses a reflection-transmission mixed extreme ultraviolet collimation illumination system, and relates to the technical field of extreme ultraviolet optics. The system comprises a discharge plasma EUV light source, a multilayer film ellipsoid reflector and a collimating super lens. Wherein the discharge plasma EUV light source is used for generating radiation light in an extreme ultraviolet band; the multi-layer film ellipsoid reflector adopts an ellipsoid design, is plated with a high-reflectivity multi-layer film, is arranged on a transmission line of the discharge plasma EUV light source, and is used for focusing light beams of the light source; and the collimating super lens is arranged behind the focal position of the multi-layer film ellipsoid reflector and is used for collimating the focused light beams to form parallel light beams for Talbot photoetching illumination. The extreme ultraviolet illumination system is compact in structure, high in light beam energy and high in collimation, and the exposure quality in an application scene needing high-collimation extreme ultraviolet light beams is effectively improved.

The embodiment of the invention provides an extreme ultraviolet light generation method, an extreme ultraviolet light source assembly and an optical system. The extreme ultraviolet light generation method comprises the following steps: generating plasma by using a magnetic confinement device; under the condition that the plasma meets the preset injection condition, the heavy metal injection device is controlled to inject specified heavy metal into the magnetic confinement device, so that the specified heavy metal acts with the plasma in the magnetic confinement device to generate extreme ultraviolet light; the optical device is controlled to collect the extreme ultraviolet light. The magnetic confinement device meeting the extreme ultraviolet light generation requirement is low in cost, simple and stable in operation and high in electro-optical conversion efficiency, so that the extreme ultraviolet light generation method improves the stability of the extreme ultraviolet light and reduces the extreme ultraviolet light generation cost.

The present disclosure relates to precursor compositions for forming irradiation sensitive films. In particular, the disclosure is directed to use of metal-containing precursors having haloaliphatic or unsaturated substituents, or other reactive moieties which advantageously react in the presence of extreme ultraviolet exposure to form resist films having increased etch resistance and / or reduced shrinkage upon processing. Alternatively, the use of metal-containing precursors having haloaliphatic or unsaturated substituents, or other reactive moieties for patterning structures having carbon-containing underlayers may advantageously react with the underlayer to increase adhesion of the resist film to the underlayer.

The invention relates to an analysis method for characterizing structures and interaction of non-denatured proteins and compounds thereof based on pulse extreme ultraviolet laser dissociation and mass spectrometry detection. Protein interacts with large and small molecules such as metal ions, drug small molecules, protein, nucleic acid or polysaccharide to form a protein compound. Natural protein and protein compound samples in a biocompatible neutral solution enter a gas phase through a non-denaturing electrospray ionization technology, then radiation excitation is performed on the natural protein and protein compound samples through pulse extreme ultraviolet laser, dissociation is induced to generate protein structure characteristic fragment ions, and finally detection and spectrogram recording are performed on the fragment ions through mass spectrum. According to the invention, the technology for characterizing the structure and interaction of the non-denatured protein and the compound of the non-denatured protein by the extreme ultraviolet band laser is realized for the first time internationally, and the method has the remarkable advantages of high sensitivity, high flux, single amino acid site resolution and the like in the aspect of researching fine structures and conformation dynamic changes of protein-protein and protein-micromolecule interaction interfaces.

The invention provides a transcendental extreme ultraviolet light source device which comprises a free electron laser main body which comprises an undulator system and an optical resonant cavity. The undulator system comprises a modulation section undulator and a radiation section undulator; the optical resonant cavity comprises resonant cavity reflectors and a dispersion section, and the modulation section undulator, the dispersion section undulator and the radiation section undulator are sequentially arranged in the direction of an electron beam and are all located between the resonant cavity reflectors; the resonant wavelength output by the radiation section undulator is 1 / h of the resonant wavelength of the modulation section undulator, h is the harmonic number, and when the resonant wavelength output by the radiation section undulator is 6-7nm, the radiation wavelength reflected by the resonant cavity is h times of the resonant wavelength output by the radiation section undulator, so that the resonant cavity is prevented from adopting a reflector with the reflection wavelength of 6-7nm. According to the device, the radiation of the target wavelength is output by using harmonic waves, and a reflector with relatively long wavelength and mature technology can be directly used; various accelerators are compatible, the energy efficiency of the accelerators is greatly improved, and power consumption is reduced.

The invention provides a pulse laser deposition process online monitoring device and method, and relates to the technical field of material preparation and process monitoring, the pulse laser deposition process online monitoring device comprises a growth cavity, a substrate supporting mechanism and a target material supporting mechanism which are arranged in the growth cavity, a pulse laser for ablating a target material, and a spectrum acquisition unit, the optical signal acquisition module is used for acquiring an optical signal radiated by plasma plume generated by ablating a target material by the pulse laser; and the spectrum analysis unit is connected with the spectrum acquisition unit and is used for receiving the light signals acquired by the spectrum acquisition unit and analyzing and processing the light signals so as to obtain the state information of the plasma plume. According to the online monitoring scheme, the extreme ultraviolet spectrum diagnosis technology and the pulse laser deposition process are deeply fused, so that the film growth process is accurately controlled, and the process is optimized.

Systems and techniques for dry deposition of extreme ultraviolet-sensitive (EUV-sensitive) photoresist layers are discussed. In some such systems, a processing chamber may be provided that features a multi-plenum showerhead that is configured to receive a vaporized organometallic precursor in one plenum and a vaporized counter-reactant thereof in another plenum. The two vaporized reactants may be delivered to a reaction space within the processing chamber and over a wafer support that supports the substrate.

A target apparatus (300) for an extreme ultraviolet (EUV) light source includes a target generator, a sensor module (130), and a target generator controller (325). The target generator includes a reservoir (115) configured to contain target material (114) that produces EUV light in a plasma state and a nozzle structure (117) in fluid communication with the reservoir. The target generator defines an opening (119) in the nozzle structure through which the target material received from the reservoir is released. The sensor module is configured to: detect an aspect relating to target material released from the opening as the target material travels along a trajectory toward a target space (112), and produce a one-dimensional signal from the detected aspect. The target generator controller is in communication with the sensor module and the target generator, and is configured to modify characteristics of the target material based on an analysis of the one-dimensional signal.

The invention discloses a method for generating a polarization-adjustable extreme ultraviolet light source, which relates to the technical field of ultrafast laser, and comprises the following steps: preparing different electronic states of triple symmetric molecules; the linear polarization incident laser interacts with different electronic states of the triple symmetry molecules to generate higher harmonics, the included angle between the polarization direction of the linear polarization incident laser and the molecular axis is adjusted until the distribution of ellipsometry of different electronic states along with the arrangement angle is obtained, and the harmonic stages required by the extreme ultraviolet light source with different ellipsometry are selected to generate the extreme ultraviolet light source with different ellipsometry. The harmonic ellipsometry rate in the harmonic stage changes along with the change of the arrangement angle; the wave spectrums of the two harmonic components in the harmonic stage are synthesized into attosecond pulses, and extreme ultraviolet light sources under different ellipsometry rates are obtained after synthesis; the generated extreme ultraviolet light source is adjustable in polarization and short in pulse width.

An extreme ultraviolet light generation system, generating extreme ultraviolet light by irradiating a target substance with laser light, includes a tank storing the target substance in a liquid state, a nozzle outputting the target substance stored in the tank, a piezoelectric element applying vibration to the target substance to be output from the nozzle to generate droplets of the target substance, a droplet detection device detecting a time interval of passage of the droplets output from the nozzle, and at least one processor. The processor acquires a first value of a vibration parameter relating to the vibration of the piezoelectric element, acquires a variation of the time interval corresponding to each of a plurality of values including the first value of the vibration parameter, and generates the droplets using a second value with which the variation of the time interval is smaller than that with the first value.

The invention provides a film structure for a narrow-band filter, and belongs to the technical field of optical elements. The invention provides a membrane structure for a narrow-band filter. The membrane structure comprises repeated unit layers, each unit layer comprises a strong absorption layer and a space layer which are stacked in sequence; the strong absorption layer is a Ni layer, and the thickness of the strong absorption layer is 1.3 nm; the space layer is a Si layer, and the thickness of the space layer is 5.4 nm; the number of periodic layers of the repeated unit layers is 60. Based on the standing wave principle, the standing wave nodes are designed at the strong absorption layer Ni layer, the filter obtained by the film structure has high working wavelength transmissivity, narrow working bandwidth and high transmission intensity for extreme ultraviolet light, the signal-to-noise ratio of detection or detection equipment is greatly improved, and the close-range working effect can be ensured.

An extreme ultraviolet light generation apparatus includes a target supply unit, a target passage detection device, a delay circuit, a laser device, a target image capturing device, and a processor. Here, the processor controls the vibrating element to provide irregular intervals between droplet targets adjacent to each other; generates integrated image data by integrating plural pieces of image data imaged at different times; specifies a position, in the integrated image data, of the droplet target most emphasized in the integrated image data; and sets a delay time based on a distance from a position of the most emphasized droplet target to a second detection position.

A septum configured to transmit extreme ultraviolet radiation, the septum including a nanostructure configured to absorb deep ultraviolet radiation, and a method for forming the septum. The diaphragm may form part of an EUV lithographic apparatus, for example as part of a spectral purity filter, pellicle assembly, or dynamic airlock assembly.

The invention belongs to the technical field of semiconductor manufacturing equipment, and discloses a DPP type extreme ultraviolet light source chip comprehensive filtering device and a method thereof. The DPP type extreme ultraviolet light source scrap comprehensive filtering device comprises a scrap introducing part, a vacuum difference part, a gas purging part, a foil trap filtering part, an atomic hydrogen part, a delayed field ion energy analyzer part, a quartz crystal microbalance part and a control and monitoring system. According to the device disclosed by the invention, various cleaning mechanisms (vacuum difference, gas purging, foil trap filtering and atomic hydrogen reaction) are combined, and a high-precision monitoring system (an ion energy analyzer and a quartz crystal microbalance) is introduced, so that the pollution of fragments of different types and different particle sizes can be effectively filtered and relieved. Meanwhile, the real-time online monitoring system can adjust the working state of each cleaning mechanism in time according to a monitoring result, so that efficient and accurate debris cleaning is realized, the service life of a photoetching system component is prolonged, and the photoetching efficiency is improved.

Disclosed is a system for and method of performing target metrology in an extreme ultraviolet light source in which illumination for a target imaging / detection system is selected to have a center wavelength less than 400 nm. In some embodiments the illumination is additionally selected to have a line width of at least 4 nm. In some embodiments illumination is obtained as a second harmonic of a Ti:sapphire laser or as a harmonic of an Nd:YAG laser.

An extreme ultraviolet (EUV) source includes a collector associated with the vessel. The extreme ultraviolet (EUV) source includes a plurality of vanes along walls of the vessel. Each vane includes a stacked vane segment, and the stacked vane segments for each vane are stacked in a direction of drainage of tin (Sn) in the vessel. The EUV source includes a thermal control system comprising a plurality of independently controllable heating elements, where a heating element is configured to provide localized control for heating of a vane segment of the stacked vane segments.

The invention discloses a preparation method of a multilayer EUV photoresist, and relates to the technical field of photoresists, the multilayer EUV photoresist comprises an EUV photoresist and a covering structure or an intercalation structure formed by at least one layer of antireflection film, the covering structure is a single-layer or multi-layer film covering structure formed by covering one or more layers of antireflection films on the EUV photoresist; the intercalation structure is a multilayer film structure formed by inserting one or more layers of antireflection films into EUV photoresist and overlapping the antireflection film layers and the photoresist. The invention has the technical effect that the obtained photoresist has higher exposure efficiency on extreme ultraviolet light with a certain wavelength or a certain wave band. The heat stability, the chemical stability and the mechanical stability are higher; cracks and defects are more difficult to generate; thermal expansion resistance is better; and the reaction with water in air is difficult.

The present disclosure relates to target expansion rate control in an extreme ultraviolet light source. A method includes: providing a target material, the target material including a component that emits extreme ultraviolet (EUV) light when converted to plasma; directing a first radiation beam toward the target material to transfer energy to the target material to modify the geometric distribution of the target material to form a modified target; directing a second radiation beam toward the modified target, the second radiation beam converting at least a portion of the modified target into a plasma that emits EUV light; measuring one or more characteristics associated with one or more of the target material and the modified target relative to the first radiation beam; and controlling the radiation exposure delivered from the first radiation beam to the target material within a predetermined energy range based on the measured one or more characteristics.

The present invention provides a method for manufacturing a pellicle and a pellicle for extreme ultraviolet exposure manufactured by the method, the method comprising a step of forming a metal silicide capping layer by using a silicon precursor and a metal precursor, wherein the pellicle can exhibit excellent performance in terms of transmittance and thermal emissivity.

The invention relates to the technical field of optical coating, in particular to a partitioned coating method for a spatial extreme ultraviolet band reflector, which aims to coat different or same films on more than two or more regions at certain intervals. The method comprises the following steps: firstly, designing more than two or more EUV wave band multilayer films, wherein the structures and the central wavelengths of the EUV multilayer films can be different; then designing an adjustable shielding coating tool which is in direct contact with the mirror surface of the reflecting mirror; the EUV wave band is plated on the surface of the cleaned reflecting mirror in a regional mode through an adjustable shielding film plating tool; and finally, testing the reflecting mirror after film coating. According to the invention, the boundary of the coating area is clear and has no shadow effect, and stray light crosstalk is reduced; and the film is good in film forming quality, small in film stress, excellent in optical performance, good in film firmness and high in space environment adaptability.

The invention provides a radiation energy measurement method and system, and relates to the technical field of radiation measurement, and the method comprises the steps: generating a driving laser by using a laser, focusing the driving laser, irradiating the focused driving laser on a target material in a vacuum chamber, generating plasma, and emitting extreme ultraviolet radiation; acquiring a trigger signal by using a delay generator, and synchronously starting energy acquisition and spectrum detection according to a set time delay; collecting the extreme ultraviolet radiation through an energy measurement module to obtain first radiation energy data; meanwhile, acquiring extreme ultraviolet radiation spectrum data of the same pulse; calculating a spectrum correction factor based on the spectrum data, and correcting the responsivity coefficient of the energy measurement module in real time; and calculating radiation energy in a preset bandwidth range by using the corrected responsivity coefficient. According to the method, the responsivity of the energy meter can be dynamically corrected by combining the spectrum, and the accuracy and long-term stability of the result are ensured.

A carbon nanofiber pellicle and pellicle film for extreme ultraviolet (EUV) lithography with different light transmission rates is disclosed. The disclosed pellicle film features improved film mechanical strength, less deflection, and increased etching resistance.

A method can adjust an extreme ultraviolet (EUV) energy output of an EUV light generation system. The method can include irradiating a droplet with a pre-pulse laser beam suitable to reshape the droplet into a target. The method can further include irradiating the target with a rarefaction pulse laser beam suitable to modify one or more of a density of the target or an absorption characteristic of the target. The method can further include irradiating the modified target with a main pulse laser beam suitable to generate EUV light. The method can further include measuring an EUV energy output of the EUV light with a sensor. The method can further include adjusting at least one of the rarefaction pulse laser beam or the main pulse laser beam in response to the measured EUV energy output.

A method for selecting operating parameters of an EUV light source includes selecting a temporal or spatial relationship between a plurality of illuminations of a target by first, second, and third laser beams. The method further includes setting an initial value of a temporal delay between the second laser beam and the third laser beam. The method further includes setting an initial value of an energy of the second laser beam. The method further includes measuring an EUV energy generated by the illuminations of the target based on the initial value of the temporal delay between the second laser beam and the third laser beam and the initial value of the energy of the second laser beam. The method further includes adjusting the temporal delay between the second laser beam and the third laser beam and the energy of the second laser beam in response to the measuring.

A method of enhancing extreme ultraviolet (EUV) transmission and reducing scattering of a carbon nanostructure pellicle film is disclosed. The method includes treating the carbon nanostructure pellicle film with at least one irradiation, which reduces the defects of the carbon nanostructure and strengthens the properties of the carbon nanostructure. Carbon nanostructure pellicle film with modified and enhanced properties for EUV lithography is also disclosed.

A method for fabricating a semiconductor device with organometallic based photoresists and commercial extreme ultraviolet photolithography. The method for fabricating a semiconductor device includes applying organometallic based photoresist to a substrate and exposing the organometallic based photoresist to extreme ultraviolet photolithography. The method may include introducing an additive to the organometallic based photoresist to promote at least one of adhesion, passivation, reactivity and cross-linking of components in the organometallic based photoresist. The method may also include exposing the organometallic based photoresist to microwave radiation. The microwave radiation may couple with molecular motions, such as internal rotations, to enhance organometallic based photoresist cluster mobility or reorientations. In addition, microwave radiation may induce charge polarization and eddy currents in materials, resulting in induced electron transport and heating due to resistive losses.