433 results about "Extreme ultraviolet" patented technology

The present disclosure relates to precursor compositions for forming irradiation sensitive films. In particular, the disclosure is directed to use of metal-containing precursors having haloaliphatic or unsaturated substituents, or other reactive moieties which advantageously react in the presence of extreme ultraviolet exposure to form resist films having increased etch resistance and / or reduced shrinkage upon processing. Alternatively, the use of metal-containing precursors having haloaliphatic or unsaturated substituents, or other reactive moieties for patterning structures having carbon-containing underlayers may advantageously react with the underlayer to increase adhesion of the resist film to the underlayer.

The invention provides a transcendental extreme ultraviolet light source device which comprises a free electron laser main body which comprises an undulator system and an optical resonant cavity. The undulator system comprises a modulation section undulator and a radiation section undulator; the optical resonant cavity comprises resonant cavity reflectors and a dispersion section, and the modulation section undulator, the dispersion section undulator and the radiation section undulator are sequentially arranged in the direction of an electron beam and are all located between the resonant cavity reflectors; the resonant wavelength output by the radiation section undulator is 1 / h of the resonant wavelength of the modulation section undulator, h is the harmonic number, and when the resonant wavelength output by the radiation section undulator is 6-7nm, the radiation wavelength reflected by the resonant cavity is h times of the resonant wavelength output by the radiation section undulator, so that the resonant cavity is prevented from adopting a reflector with the reflection wavelength of 6-7nm. According to the device, the radiation of the target wavelength is output by using harmonic waves, and a reflector with relatively long wavelength and mature technology can be directly used; various accelerators are compatible, the energy efficiency of the accelerators is greatly improved, and power consumption is reduced.

The invention provides a pulse laser deposition process online monitoring device and method, and relates to the technical field of material preparation and process monitoring, the pulse laser deposition process online monitoring device comprises a growth cavity, a substrate supporting mechanism and a target material supporting mechanism which are arranged in the growth cavity, a pulse laser for ablating a target material, and a spectrum acquisition unit, the optical signal acquisition module is used for acquiring an optical signal radiated by plasma plume generated by ablating a target material by the pulse laser; and the spectrum analysis unit is connected with the spectrum acquisition unit and is used for receiving the light signals acquired by the spectrum acquisition unit and analyzing and processing the light signals so as to obtain the state information of the plasma plume. According to the online monitoring scheme, the extreme ultraviolet spectrum diagnosis technology and the pulse laser deposition process are deeply fused, so that the film growth process is accurately controlled, and the process is optimized.

An extreme ultraviolet light generation apparatus includes a target supply unit, a target passage detection device, a delay circuit, a laser device, a target image capturing device, and a processor. Here, the processor controls the vibrating element to provide irregular intervals between droplet targets adjacent to each other; generates integrated image data by integrating plural pieces of image data imaged at different times; specifies a position, in the integrated image data, of the droplet target most emphasized in the integrated image data; and sets a delay time based on a distance from a position of the most emphasized droplet target to a second detection position.

The invention provides a radiation energy measurement method and system, and relates to the technical field of radiation measurement, and the method comprises the steps: generating a driving laser by using a laser, focusing the driving laser, irradiating the focused driving laser on a target material in a vacuum chamber, generating plasma, and emitting extreme ultraviolet radiation; acquiring a trigger signal by using a delay generator, and synchronously starting energy acquisition and spectrum detection according to a set time delay; collecting the extreme ultraviolet radiation through an energy measurement module to obtain first radiation energy data; meanwhile, acquiring extreme ultraviolet radiation spectrum data of the same pulse; calculating a spectrum correction factor based on the spectrum data, and correcting the responsivity coefficient of the energy measurement module in real time; and calculating radiation energy in a preset bandwidth range by using the corrected responsivity coefficient. According to the method, the responsivity of the energy meter can be dynamically corrected by combining the spectrum, and the accuracy and long-term stability of the result are ensured.

An optical filter including at least one of a high refractive index material and a low refractive index material; wherein the optical filter exhibits a reduced angle shift in at least one of a visible, near infrared, and an extreme ultraviolet wavelength is disclosed. A method of depositing a film is also disclosed.

This invention discloses a method for enhancing and controlling the radiation of an LPP-EUV light source based on dual-pulse spatiotemporal co-constraint, belonging to the field of semiconductor manufacturing technology. This invention obtains a spatiotemporal reference by real-time monitoring of a liquid metal droplet, uses a pre-pulse laser to induce target material deformation into a fogged target cloud, and combines high-speed imaging and a hydrodynamic model to predict the time and coordinates of the target cloud's energy absorption peak. It dynamically adjusts the delay time and optical axis direction of the main pulse laser to achieve dual-pulse spatiotemporal co-constraint, and constructs a closed-loop control system through a recursive least squares algorithm with a dynamic forgetting factor. This invention effectively improves the extreme ultraviolet light conversion efficiency, controls the power fluctuation of the light source within ±0.5%, and extends the maintenance cycle of optical components by 2 times. It can be widely applied to next-generation high-power extreme ultraviolet lithography light source systems, meeting the application requirements of semiconductor miniaturization processes.

The application discloses an extreme ultraviolet coherent diffraction stack imaging method based on random phase modulation, which is realized through an extreme ultraviolet phase modulation stack imaging light path of a random phase plate. The imaging light path comprises a high harmonic light source, a pinhole, a phase plate and a photoelectric coupling detector. The high harmonic light source emits light to irradiate a probe. A sample to be measured is arranged between the pinhole and the phase plate. The phase plate is used for phase modulation. The light irradiated by the probe is irradiated onto the sample to be measured through the pinhole, propagates a preset distance, and then reaches the plane of the photoelectric coupling detector through the phase plate. The diffraction pattern of the sample to be measured is obtained. Iterative processing is performed on the first amplitude information of the emergent light, the second amplitude information of the reverse propagation, the first diffraction pattern light field and the first diffraction pattern light spot. The best sample to be measured pattern is obtained, and the best sample to be measured information and the best light irradiation probe information are separated. The method can realize lensless imaging, avoids aberration and aperture limitation caused by the use of a lens, and has a simpler system and lower cost.

The reflective mask blank (100) according to the present invention is a reflective mask blank (100) for use as a material for a reflective mask (110) used in EUV lithography using extreme ultraviolet (EUV) light as exposure light. This reflective mask blank (100) is provided with: a substrate (1); a multilayer reflective film (2) that is formed on one main surface of the substrate (1) and reflects exposure light; a protective film (3) that is formed on the multilayer reflective film (2) and protects the multilayer reflective film (2); an absorption film (6) that is formed above the protective film (3) and that absorbs exposure light; and intermediate films (4, 5) provided between the protective film (3) and the absorbent film (6). The intermediate films (4, 5) include: a first intermediate film (4) containing niobium (Nb); and a second intermediate film (5) that is positioned closer to the absorbing film (6) than the first intermediate film (4) and is made of a material that can be dry-etched by an oxygen-containing gas. The absorber film (6) is formed of a material that can be dry-etched by a fluorine-containing gas.

The invention discloses an extreme ultraviolet laminated diffraction imaging method based on an iterative frequency mask. Comprising the steps that an extreme ultraviolet coherent light source is used for scanning and irradiating a to-be-reconstructed target, and diffraction intensity patterns of all scanning positions are collected; obtaining an initial probe function and an initial reconstruction target function according to the position information of all the scanning positions and the diffraction intensity pattern; meanwhile, an auxiliary variable tensor, a Lagrange multiplier tensor and an adaptive learning rate are initialized; constructing a multi-level spatial frequency mask; according to diffraction intensity patterns of all scanning positions, a multi-level spatial frequency mask is used for updating the probe function step by step from low frequency to high frequency, a target function, an auxiliary variable tensor and a Lagrange multiplier tensor are reconstructed, and the obtained optimal probe function and the optimal reconstruction target function serve as reconstruction results. The method has remarkable advantages in the aspects of reconstruction quality, convergence speed and robustness to low lamination rate and high noise environment, and has important application value for lamination diffraction imaging.

Provided is a reflective mask blank including a substrate, a multilayer reflective film, a protective film, and a light absorbing film having a phase shift function. The light-absorbing film contains ruthenium, tantalum, and nitrogen and does not contain oxygen, and has a ruthenium content of 80 to 90 at%, a tantalum content of 5 to 15% by amount, a nitrogen content of not more than 10 at%, a thickness of 38 to 50 nm, and a reflectance of 10 to 14% and a phase shift of 205 to 225 degrees with respect to exposure light that is light in the extreme ultraviolet range.

Methods, related structures, and related systems are provided for lithography, particularly extreme ultraviolet (EUV) lithography. Presently disclosed methods can comprise forming a carbon underlayer having a high sp3 carbon content. Presently disclosed methods can comprise forming a carbon underlayer by a deposition process that comprises continually generating a plasma and providing a precursor in a sequence of discrete pulses.

Provided is a control method of an extreme ultraviolet light generation system. The extreme ultraviolet light generation system includes a target supply unit configured to supply a target, a laser device configured to irradiate the target with laser light, an EUV energy sensor configured to detect an energy of extreme ultraviolet light generated by the target being irradiated with the laser light, an optical adjuster configured to adjust an energy of the laser light, and a processor configured to adjust the optical adjuster by PID control based on output of the EUV energy sensor. The processor acquires a first index value for the output of the EUV energy sensor and a second index value different from the first index value and determines a control gain in the PID control based on the first and second index values.

The invention discloses an extreme ultraviolet spectrograph calibration method based on extreme ultraviolet diffraction, and relates to the technical field of spectrograph calibration, and the technical scheme is characterized in that a desktop type XUV light source generation device is used for generating XUV light beams; a diffraction device is arranged on the propagation path of the XUV light beam, so that the XUV light beam is diffracted; taking the FID spectral line of the helium atom 2p-1s as an energy reference point, and deducing part of unknown parameters of the diffraction device and the spectrometer according to the separation distance of + / -1 level diffraction beams measured at the position corresponding to the energy; in combination with a Gaussian fitting method, the positions of 0-level light beams and + / -1-level diffraction light beams at other positions on the detector are obtained, and according to a diffraction formula, energy corresponding to all positions on the XUV spectrometer is inverted; calibration precision is ensured by correcting copper mesh placement angle deviation and CCD image angle deviation. According to the invention, XUV light is diffracted by using the copper net, and global continuous calibration of the energy axis of the spectrometer is realized by combining with a characteristic spectral line with a known wavelength.

The application relates to the field of projection optical technology, in particular to an extreme ultraviolet lithography projection exposure optical system and method, and provides an ultraviolet lithography projection exposure optical system which comprises a light field uniformity adjusting module, the light field uniformity adjusting module is respectively connected with a light beam generating module and a light beam shaping module in signal connection; the light field uniformity adjusting module is used for acquiring extreme ultraviolet light beam intensity distribution data output by the light beam shaping module; is also used for adjusting the output power of the light beam generating module according to the light intensity distribution data, so that the lowest light intensity in the extreme ultraviolet light beam intensity distribution data output by the light beam shaping module after power adjustment is not lower than a target light intensity; and is also used for adjusting the light transmittance of a gradual attenuation piece in the extreme ultraviolet light beam shaping module according to the extreme ultraviolet light beam intensity distribution data output by the light beam shaping module after power adjustment, so that the light intensity difference of any two positions in the extreme ultraviolet light beam intensity distribution data output by the light beam shaping module after transmittance adjustment does not exceed a difference limited range.

Provided are a multiwalled carbon nanotube assembly having high conductivity and good dispersibility in a dispersion medium, a multiwalled carbon nanotube dispersion liquid, a conductive material, an electrode, a secondary battery, a planar assembly, a filter, an electromagnetic shield, and an extreme ultraviolet protective film. A multi-walled carbon nanotube assembly, a multi-walled carbon nanotube dispersion, a conductive material, an electrode, a secondary battery, a planar assembly, a filter, an electromagnetic shield, and an extreme ultraviolet protective film, wherein the multi-walled carbon nanotube assembly contains Fe atoms and multi-walled carbon nanotubes having a maximum length of 1000-30000 [mu] m, and the Fe atom content ratio relative to the total mass of the assembly is 0.5 mass% or more but less than 10 mass%. The invention also provides a multi-walled carbon nanotube dispersion, a conductive material, an electrode, a secondary battery, a planar assembly, a filter, an electromagnetic shield, and an extreme ultraviolet protective film.

A method of modifying an opening in a masking material layer provided on a substrate to achieve desired critical dimensions may include forming a plurality of openings in the masking material layer, and performing one or more ion processes on the masking material layer to enlarge or reduce one or more dimensions of the plurality of openings. A first ion process of the one or more ion processes may include directionally depositing a material layer on the masking material layer by directing a material beam at a first non-zero angle relative to a normal direction extending from a top surface of the masking material layer. A second ion process of the one or more ion processes may include performing an angled ion etch by delivering an ion beam at a second non-zero angle relative to the normal direction extending from the top surface of the masking material layer.

An extreme ultraviolet light generation system, generating plasma by irradiating a target with pulse laser light and generate extreme ultraviolet light, includes a chamber, a target supply unit supplying the target into the chamber, a target passage detection device detecting the target passing through a predetermined region, a laser device radiating the pulse laser light toward the target having passed through the predetermined region, and a processor. The target passage detection device includes a light source irradiating the predetermined region with light, and a sensor receiving the light and outputting a signal corresponding to a received light amount of the light. The processor acquires, from the signal, a passage timing at which the target is detected and a time width during which the target is detected, and determines irradiation timing of the laser device for irradiating with the pulse laser light based on the passage timing and the time width.

The invention discloses a photoresist composition based on metal nanoparticles and application of the photoresist composition. The photoresist composition comprises metal nanoparticles, a photosensitizer, an anti-diffusion agent and a photoresist solvent, wherein the metal nanoparticles are silver nanoparticles, copper nanoparticles and gold nanoparticles. The photoresist composition has good film-forming property and excellent patterning imaging capability, photoetching patterns with different resolutions can be obtained through ultraviolet, electron beam or extreme ultraviolet exposure, and the formed patterns have good conductivity after being subjected to heat treatment and can be directly used for processing micro-nano devices.

The application discloses a thermoelectric pile structure for calibrating a far ultraviolet ultraviolet detector based on MEMS, which comprises a silicon substrate, a support layer, an absorption layer, a thermocouple pair, aluminum wires, aluminum electrodes and a single crystal silicon material structure on the silicon substrate. The double-layer thermocouple stacking structure is adopted to improve the device duty ratio, more thermocouple pairs can be laid in the case of keeping the size of the one-layer structure unchanged, and the response rate of the detector is improved. The circular structure conforms to the distribution trend that the temperature is radially diffused from the center of the absorption layer to the periphery in a decreasing manner, the hot end of the thermocouple pair can be closer to the area with higher temperature, the temperature of the hot end of the thermocouple pair is more uniform, and the response rate of the detector is improved. The radiant energy of the far ultraviolet ultraviolet radiation source is converted into an output thermoelectric electromotive force, a mathematical model of Fourier's law and the Seebeck effect is established for calculation, and the heat flux density of the far ultraviolet ultraviolet radiation source is measured.

A method of microfabrication includes forming a sacrificial layer over a film. A resist layer is formed over the sacrificial layer. The resist layer includes an extreme ultraviolet (EUV) resist. A pattern is formed in the resist layer by an EUV exposure and a wet etch followed by rinsing and drying, resulting in uncovered portions of the sacrificial layer. The uncovered portions of the sacrificial layer are treated. The pattern is transferred from the resist layer to the film by performing an etch process.

This invention relates to an extreme ultraviolet (EUV) light source device, comprising a seed laser generator, an electron source, an electron linear accelerator, a first modulation section, a first dispersion section, a second modulation section, a second dispersion section, and an amplifier. A first electron beam generated by the electron source is accelerated by the electron linear accelerator to form a second electron beam. The seed laser generator generates a seed laser, and both the seed laser and the second electron beam are injected into the first modulation section to induce a first energy modulation in the second electron beam, resulting in a third electron beam. The first dispersion section compresses the third electron beam to form a fourth electron beam. The second modulation section induces coherent radiation in the fourth electron beam, which is then subjected to a second energy modulation by the coherent radiation to form a fifth electron beam. The second dispersion section compresses the fifth electron beam to form a sixth electron beam. The amplifier causes the sixth electron beam to radiate and emit kilowatt-level EUV light. The EUV light source device of this invention can generate EUV light with an average power in the kilowatt range and has a compact structure.

The invention relates to the technical field of semiconductors, and provides a GaN-based gradient doped extreme ultraviolet detector and a preparation method thereof. The GaN-based gradient doping extreme ultraviolet detector comprises a substrate, a GaN buffer layer, an n-GaN layer, an i-GaN layer, an n-type electrode, a gradient doping p-GaN layer and a p-type electrode, and the doping concentration of the gradient doping p-GaN layer is gradually reduced in the direction from the surface, close to the p-type electrode, of the gradient doping p-GaN layer to the surface, away from the p-type electrode, of the gradient doping p-GaN layer; according to the GaN-based gradient doping extreme ultraviolet detector, a surface electric field can be induced by utilizing the gradient doping p-GaN layer, and the electric field can drive photon-excited electron-hole pair separation, so that the surface carrier collection capability of an EUV wave band is remarkably improved; the surface electric field formed by the gradient doping p-GaN layer is utilized, the light current and the responsivity of the detector are improved, and the structure has a wide application prospect in the extreme ultraviolet GaN-based detector.

An extreme ultraviolet light generation apparatus includes a chamber in which a target substance supplied to a plasma generation region is irradiated with laser light to generate extreme ultraviolet light, a laser device generating the laser light, a target supply unit supplying a droplet of the target substance toward the plasma generation region, a target collection unit collecting the target substance which has not been irradiated with the laser light, a first gas supply unit supplying a buffer gas into the chamber, and a processor controlling the first gas supply unit so that, in a period of the droplet being output, a first flow rate of the buffer gas to be supplied from the first gas supply unit in at least a part of a first period is smaller than a second flow rate of the buffer gas to be supplied from the first gas supply unit in a second period.

The application discloses a kind of pneumatic seal nozzle for extreme ultraviolet lithography machine, which is based on a kind of hydrogen curtain gas supply system for extreme ultraviolet lithography machine, the system is arranged in the outer edge, inner edge and center ring of extreme ultraviolet light collection mirror, three groups of independent controllable hydrogen nozzle;Its characteristics are: the pneumatic seal nozzle in the form of Laval nozzle with throat arranged in the center of extreme ultraviolet light collection mirror, the high-speed flow generated by it is used to form the cross-seam pneumatic seal in the form of backflow zone at the gap between laser chamber and collection mirror assembly, the scale of backflow zone is in the same geometric order with the cross-seam width, so that the leakage of laser chamber gas supply at the gap is weakened by one order of magnitude;The application integrates the pneumatic seal nozzle in the form of Laval nozzle with throat at the gap between laser chamber and collection mirror assembly, reduces the hydrogen leakage flow to about 5% without device, greatly reduces gas loss, and reduces the working pressure of gas pressure maintenance pump set.

A method includes irradiating a target droplet in an extreme ultraviolet (EUV) light source of an extreme ultraviolet lithography tool with non-ionizing light from a droplet illumination module. The method further includes detecting light reflected and / or scattered by the target droplet, and performing particle image velocimetry, based on the detected light, to determine a velocity of the target droplet. The method also includes adjusting a time delay between a generation of the target droplet and a generation of an excitation laser beam based on the velocity of the target droplet.

An optical lithography system for controlling a plasma location in an extreme ultraviolet lithography light source can include a vacuum chamber; a droplet generator to dispense a stream of droplets into the vacuum chamber, wherein the droplets are formed of a metallic material; a laser light source to emit a plurality of laser pulses including at least a first pulse and a second pulse into the vacuum chamber; a sensor to detect an observed plasma location within the chamber, wherein the observed plasma location includes a location at which the plurality of laser pulses vaporize a droplet of the stream of droplets to generate a plasma that emits extreme ultraviolet light radiation; and a first feedback loop connecting the sensor to the laser light source, wherein the first feedback loop adjusts a time delay between the first and second pulses to minimize a difference between the observed plasma location and a target plasma location.

A substrate is mounted on a chuck in a chamber of an EUV tool. An illumination aperture in the chamber provides a beam of light to illuminate the substrate on the chuck. The beam of light includes extreme ultraviolet (EUV) in-band (IB) light and out-of-band (OOB) light. The OOB light has longer wavelengths than the EUV IB light. A beam-narrowing aperture in the chamber, which is switchable into and out of a path for the beam of light, selectively narrows the beam of light to illuminate the substrate. A band-selection filter filters out the OOB light or the EUV IB light. Imaging optics in the chamber relay light from the substrate to an imaging plane. A grating spectrally disperses the light from the substrate. A sensor detects the light from the substrate as relayed by the imaging optics and spectrally dispersed by the grating.

Disclosed are pellicles for use in extreme ultraviolet (EUV) lithography, the pellicles comprising silicon carbide nanostructures, and exhibiting high transmittance of EUV exposure light and high mechanical strength, as well as methods of using these pellicles.

To provide a target supply system that suppresses generation of a defective target formation.SOLUTION: A target supply system comprises: a target generating part which fuses a solid target substance inside thereof to generate a liquid target substance, and ejects the liquid target substance; a loading mechanism which loads the solid target substance into the target generating part; a heater which is arranged for the target generating part; a sensor which detects the temperature of the target generating part; and a processor which controls loading timing at which the solid target substance is loaded into the target generating part, feedback-controls the heater on the basis of the current temperature detected by the sensor, and feed-forward controls the heater on the basis of the loading timing while feedback-controlling the heater.SELECTED DRAWING: Figure 14