640 results about "Extreme ultraviolet" patented technology

Dry development or dry removal of metal-containing extreme ultraviolet radiation (EUV) photoresist is performed in atmospheric conditions or performed in process tools without vacuum equipment. Dry removal of the metal-containing EUV photoresist may be performed under atmospheric pressure or over-atmospheric pressure. Dry removal of the metal-containing EUV photoresist may be performed with exposure to an air environment or with non-oxidizing gases. A process chamber or module may be modified or integrated to perform dry removal of the metal-containing EUV photoresist with baking, wafer cleaning, wafer treatment, or other photoresist processing function. In some embodiments, the process chamber for dry removal of the metal-containing EUV photoresist includes a heating assembly for localized heating of a semiconductor substrate and a movable discharge nozzle for localized gas delivery above the semiconductor substrate.

Dry development or dry removal of metal-containing extreme ultraviolet radiation (EUV) photoresist is performed in atmospheric conditions or performed in process tools without vacuum equipment. Dry removal of the metal-containing EUV photoresist may be performed under atmospheric pressure or over-atmospheric pressure. Dry removal of the metal-containing EUV photoresist may be performed with exposure to an air environment or with non-oxidizing gases. A process chamber or module may be modified or integrated to perform dry removal of the metal-containing EUV photoresist with baking, wafer cleaning, wafer treatment, or other photoresist processing function. In some embodiments, the process chamber for dry removal of the metal-containing EUV photoresist includes a heating assembly for localized heating of a semiconductor substrate and a movable discharge nozzle for localized gas delivery above the semiconductor substrate.

The invention discloses a reflection-transmission mixed extreme ultraviolet collimation illumination system, and relates to the technical field of extreme ultraviolet optics. The system comprises a discharge plasma EUV light source, a multilayer film ellipsoid reflector and a collimating super lens. Wherein the discharge plasma EUV light source is used for generating radiation light in an extreme ultraviolet band; the multi-layer film ellipsoid reflector adopts an ellipsoid design, is plated with a high-reflectivity multi-layer film, is arranged on a transmission line of the discharge plasma EUV light source, and is used for focusing light beams of the light source; and the collimating super lens is arranged behind the focal position of the multi-layer film ellipsoid reflector and is used for collimating the focused light beams to form parallel light beams for Talbot photoetching illumination. The extreme ultraviolet illumination system is compact in structure, high in light beam energy and high in collimation, and the exposure quality in an application scene needing high-collimation extreme ultraviolet light beams is effectively improved.

The present disclosure relates to precursor compositions for forming irradiation sensitive films. In particular, the disclosure is directed to use of metal-containing precursors having haloaliphatic or unsaturated substituents, or other reactive moieties which advantageously react in the presence of extreme ultraviolet exposure to form resist films having increased etch resistance and / or reduced shrinkage upon processing. Alternatively, the use of metal-containing precursors having haloaliphatic or unsaturated substituents, or other reactive moieties for patterning structures having carbon-containing underlayers may advantageously react with the underlayer to increase adhesion of the resist film to the underlayer.

The invention relates to an analysis method for characterizing structures and interaction of non-denatured proteins and compounds thereof based on pulse extreme ultraviolet laser dissociation and mass spectrometry detection. Protein interacts with large and small molecules such as metal ions, drug small molecules, protein, nucleic acid or polysaccharide to form a protein compound. Natural protein and protein compound samples in a biocompatible neutral solution enter a gas phase through a non-denaturing electrospray ionization technology, then radiation excitation is performed on the natural protein and protein compound samples through pulse extreme ultraviolet laser, dissociation is induced to generate protein structure characteristic fragment ions, and finally detection and spectrogram recording are performed on the fragment ions through mass spectrum. According to the invention, the technology for characterizing the structure and interaction of the non-denatured protein and the compound of the non-denatured protein by the extreme ultraviolet band laser is realized for the first time internationally, and the method has the remarkable advantages of high sensitivity, high flux, single amino acid site resolution and the like in the aspect of researching fine structures and conformation dynamic changes of protein-protein and protein-micromolecule interaction interfaces.

The invention provides a transcendental extreme ultraviolet light source device which comprises a free electron laser main body which comprises an undulator system and an optical resonant cavity. The undulator system comprises a modulation section undulator and a radiation section undulator; the optical resonant cavity comprises resonant cavity reflectors and a dispersion section, and the modulation section undulator, the dispersion section undulator and the radiation section undulator are sequentially arranged in the direction of an electron beam and are all located between the resonant cavity reflectors; the resonant wavelength output by the radiation section undulator is 1 / h of the resonant wavelength of the modulation section undulator, h is the harmonic number, and when the resonant wavelength output by the radiation section undulator is 6-7nm, the radiation wavelength reflected by the resonant cavity is h times of the resonant wavelength output by the radiation section undulator, so that the resonant cavity is prevented from adopting a reflector with the reflection wavelength of 6-7nm. According to the device, the radiation of the target wavelength is output by using harmonic waves, and a reflector with relatively long wavelength and mature technology can be directly used; various accelerators are compatible, the energy efficiency of the accelerators is greatly improved, and power consumption is reduced.

The invention provides a pulse laser deposition process online monitoring device and method, and relates to the technical field of material preparation and process monitoring, the pulse laser deposition process online monitoring device comprises a growth cavity, a substrate supporting mechanism and a target material supporting mechanism which are arranged in the growth cavity, a pulse laser for ablating a target material, and a spectrum acquisition unit, the optical signal acquisition module is used for acquiring an optical signal radiated by plasma plume generated by ablating a target material by the pulse laser; and the spectrum analysis unit is connected with the spectrum acquisition unit and is used for receiving the light signals acquired by the spectrum acquisition unit and analyzing and processing the light signals so as to obtain the state information of the plasma plume. According to the online monitoring scheme, the extreme ultraviolet spectrum diagnosis technology and the pulse laser deposition process are deeply fused, so that the film growth process is accurately controlled, and the process is optimized.

Systems and techniques for dry deposition of extreme ultraviolet-sensitive (EUV-sensitive) photoresist layers are discussed. In some such systems, a processing chamber may be provided that features a multi-plenum showerhead that is configured to receive a vaporized organometallic precursor in one plenum and a vaporized counter-reactant thereof in another plenum. The two vaporized reactants may be delivered to a reaction space within the processing chamber and over a wafer support that supports the substrate.

An extreme ultraviolet light generation system, generating extreme ultraviolet light by irradiating a target substance with laser light, includes a tank storing the target substance in a liquid state, a nozzle outputting the target substance stored in the tank, a piezoelectric element applying vibration to the target substance to be output from the nozzle to generate droplets of the target substance, a droplet detection device detecting a time interval of passage of the droplets output from the nozzle, and at least one processor. The processor acquires a first value of a vibration parameter relating to the vibration of the piezoelectric element, acquires a variation of the time interval corresponding to each of a plurality of values including the first value of the vibration parameter, and generates the droplets using a second value with which the variation of the time interval is smaller than that with the first value.

An extreme ultraviolet light generation apparatus includes a target supply unit, a target passage detection device, a delay circuit, a laser device, a target image capturing device, and a processor. Here, the processor controls the vibrating element to provide irregular intervals between droplet targets adjacent to each other; generates integrated image data by integrating plural pieces of image data imaged at different times; specifies a position, in the integrated image data, of the droplet target most emphasized in the integrated image data; and sets a delay time based on a distance from a position of the most emphasized droplet target to a second detection position.

A septum configured to transmit extreme ultraviolet radiation, the septum including a nanostructure configured to absorb deep ultraviolet radiation, and a method for forming the septum. The diaphragm may form part of an EUV lithographic apparatus, for example as part of a spectral purity filter, pellicle assembly, or dynamic airlock assembly.

An extreme ultraviolet (EUV) source includes a collector associated with the vessel. The extreme ultraviolet (EUV) source includes a plurality of vanes along walls of the vessel. Each vane includes a stacked vane segment, and the stacked vane segments for each vane are stacked in a direction of drainage of tin (Sn) in the vessel. The EUV source includes a thermal control system comprising a plurality of independently controllable heating elements, where a heating element is configured to provide localized control for heating of a vane segment of the stacked vane segments.

The present invention provides a method for manufacturing a pellicle and a pellicle for extreme ultraviolet exposure manufactured by the method, the method comprising a step of forming a metal silicide capping layer by using a silicon precursor and a metal precursor, wherein the pellicle can exhibit excellent performance in terms of transmittance and thermal emissivity.

The invention provides a radiation energy measurement method and system, and relates to the technical field of radiation measurement, and the method comprises the steps: generating a driving laser by using a laser, focusing the driving laser, irradiating the focused driving laser on a target material in a vacuum chamber, generating plasma, and emitting extreme ultraviolet radiation; acquiring a trigger signal by using a delay generator, and synchronously starting energy acquisition and spectrum detection according to a set time delay; collecting the extreme ultraviolet radiation through an energy measurement module to obtain first radiation energy data; meanwhile, acquiring extreme ultraviolet radiation spectrum data of the same pulse; calculating a spectrum correction factor based on the spectrum data, and correcting the responsivity coefficient of the energy measurement module in real time; and calculating radiation energy in a preset bandwidth range by using the corrected responsivity coefficient. According to the method, the responsivity of the energy meter can be dynamically corrected by combining the spectrum, and the accuracy and long-term stability of the result are ensured.

A method can adjust an extreme ultraviolet (EUV) energy output of an EUV light generation system. The method can include irradiating a droplet with a pre-pulse laser beam suitable to reshape the droplet into a target. The method can further include irradiating the target with a rarefaction pulse laser beam suitable to modify one or more of a density of the target or an absorption characteristic of the target. The method can further include irradiating the modified target with a main pulse laser beam suitable to generate EUV light. The method can further include measuring an EUV energy output of the EUV light with a sensor. The method can further include adjusting at least one of the rarefaction pulse laser beam or the main pulse laser beam in response to the measured EUV energy output.

A method for selecting operating parameters of an EUV light source includes selecting a temporal or spatial relationship between a plurality of illuminations of a target by first, second, and third laser beams. The method further includes setting an initial value of a temporal delay between the second laser beam and the third laser beam. The method further includes setting an initial value of an energy of the second laser beam. The method further includes measuring an EUV energy generated by the illuminations of the target based on the initial value of the temporal delay between the second laser beam and the third laser beam and the initial value of the energy of the second laser beam. The method further includes adjusting the temporal delay between the second laser beam and the third laser beam and the energy of the second laser beam in response to the measuring.

The invention discloses a coherent modulation detection method and device for extreme ultraviolet lithography mask phase defects. High-precision full-field reconstruction of nanoscale phase defects is realized through an iterative algorithm. The device adopts a compact extreme ultraviolet light source to generate high-brightness coherent light, focusing probe light is reflected by a multi-layer film focusing optical device and enters a mask at a Bragg angle, the reflected light carries phase defect information, the defect information is coded into an intensity signal through amplitude-phase dual modulation of a modulator, a photoelectric detector collects a diffraction pattern, and the diffraction pattern is detected by a detector. Inputting an iterative algorithm; and finally realizing the quantitative reconstruction of the phase defect by combining support constraint with an error amplification coefficient, ensuring the convergence of the algorithm, modulating a forward propagation simulation light field, correcting the calculated light field by amplitude constraint, demodulating a reverse propagation simulation light field, and finally realizing the quantitative reconstruction of the phase defect. The device is suitable for online detection of the extreme ultraviolet mask, and has the advantages of strong anti-noise capability, good algorithm convergence, low requirement on the dynamic range of a detector and the like.

To provide an onium salt for a resist composition having high sensitivity to particle beams or electromagnetic radiation, in particular, electron beams or extreme ultraviolet rays.SOLUTION: The onium salt is represented by general formula (1) or (2) in the figure. The onium salt has at least one fluorine atom or iodine atom bonded as a substituent in its structure.SELECTED DRAWING: None

An optical filter including at least one of a high refractive index material and a low refractive index material; wherein the optical filter exhibits a reduced angle shift in at least one of a visible, near infrared, and an extreme ultraviolet wavelength is disclosed. A method of depositing a film is also disclosed.

This invention discloses a method for enhancing and controlling the radiation of an LPP-EUV light source based on dual-pulse spatiotemporal co-constraint, belonging to the field of semiconductor manufacturing technology. This invention obtains a spatiotemporal reference by real-time monitoring of a liquid metal droplet, uses a pre-pulse laser to induce target material deformation into a fogged target cloud, and combines high-speed imaging and a hydrodynamic model to predict the time and coordinates of the target cloud's energy absorption peak. It dynamically adjusts the delay time and optical axis direction of the main pulse laser to achieve dual-pulse spatiotemporal co-constraint, and constructs a closed-loop control system through a recursive least squares algorithm with a dynamic forgetting factor. This invention effectively improves the extreme ultraviolet light conversion efficiency, controls the power fluctuation of the light source within ±0.5%, and extends the maintenance cycle of optical components by 2 times. It can be widely applied to next-generation high-power extreme ultraviolet lithography light source systems, meeting the application requirements of semiconductor miniaturization processes.

An organotin compound photoresist composition for photolithography patterning is described, particularly for extreme ultraviolet radiation (EUV), wherein organotin compound photoresist composition comprises a [n]stannocenophane compound, a solvent, and / or an additive. [n]Stannocenophane contains bridged-stannocenyl group, wherein stannocenyl is bis(cyclopentadienyl)tin, or substituted bis(cyclopentadienyl)tin. Two cyclopentadienyl rings of [n]stannocenophane are connected by n=1, 2, or 3 atom links as intramolecular bridges containing C, Si, Ge, Sn, or O, S, Se, or Te, wherein cyclopentadienyl comprises cyclopentadienyl C5H5 group, or substituted cyclopentadienyl C5H3R′, C5H2R′2, C5HR′3, C5R′4, or C5R′5 group.

The application discloses an extreme ultraviolet coherent diffraction stack imaging method based on random phase modulation, which is realized through an extreme ultraviolet phase modulation stack imaging light path of a random phase plate. The imaging light path comprises a high harmonic light source, a pinhole, a phase plate and a photoelectric coupling detector. The high harmonic light source emits light to irradiate a probe. A sample to be measured is arranged between the pinhole and the phase plate. The phase plate is used for phase modulation. The light irradiated by the probe is irradiated onto the sample to be measured through the pinhole, propagates a preset distance, and then reaches the plane of the photoelectric coupling detector through the phase plate. The diffraction pattern of the sample to be measured is obtained. Iterative processing is performed on the first amplitude information of the emergent light, the second amplitude information of the reverse propagation, the first diffraction pattern light field and the first diffraction pattern light spot. The best sample to be measured pattern is obtained, and the best sample to be measured information and the best light irradiation probe information are separated. The method can realize lensless imaging, avoids aberration and aperture limitation caused by the use of a lens, and has a simpler system and lower cost.

The invention discloses a positive photoresist composition and application thereof. The positive photoresist composition comprises a polythioether high-molecular compound and a photoresist solvent. The polythioether high-molecular compound comprises the following structure: # imgabs0. The polythioether high-molecular compound is prepared by polymerizing 9 parts by mole of a multi-core antimony unit, 7.0-9.0 parts by mole of binary thiol, 1.0-0 part by mole of polythiol, a photoinitiator and a solvent in an air atmosphere at room temperature through thiol alkene click reaction initiated by ultraviolet light. And after the reaction, performing rotary evaporation on the solvent to obtain the product. The mass of the polythioether high-molecular compound accounts for 1wt%-20wt% of the total mass of the positive photoresist composition, and the balance is the photoresist solvent. The positive photoresist composition can realize a positive photoetching effect under exposure of electron beams and extreme ultraviolet light (EUV), can reach a higher resolution ratio under a lower electron beam exposure dose, and can reach a resolution ratio of 25 nm under a wider extreme ultraviolet light exposure dose of 32.9-217.4 mJ / cm < 2 >.

An extreme ultraviolet radiation (EUV) source, including: a vessel having an inner vessel wall and an intermediate focus (IF) region; an EUV collector disposed inside the vessel, the EUV collector including a reflective surface configured to reflect EUV radiation toward the intermediate focus region, the reflective surface configured to directionally face the IF region of the vessel; a showerhead disposed along at least a portion of the inner vessel wall, the showerhead including a plurality of nozzles configured to introduce gas into the vessel; and one or more exhausts configured to remove gas introduced into the vessel, the one or more exhausts being oriented along at least a portion of the inner vessel wall so that the gas is caused to flow away from the EUV collector.

The reflective mask blank (100) according to the present invention is a reflective mask blank (100) for use as a material for a reflective mask (110) used in EUV lithography using extreme ultraviolet (EUV) light as exposure light. This reflective mask blank (100) is provided with: a substrate (1); a multilayer reflective film (2) that is formed on one main surface of the substrate (1) and reflects exposure light; a protective film (3) that is formed on the multilayer reflective film (2) and protects the multilayer reflective film (2); an absorption film (6) that is formed above the protective film (3) and that absorbs exposure light; and intermediate films (4, 5) provided between the protective film (3) and the absorbent film (6). The intermediate films (4, 5) include: a first intermediate film (4) containing niobium (Nb); and a second intermediate film (5) that is positioned closer to the absorbing film (6) than the first intermediate film (4) and is made of a material that can be dry-etched by an oxygen-containing gas. The absorber film (6) is formed of a material that can be dry-etched by a fluorine-containing gas.

The present invention provides a carbon nanotube assembly which has excellent conductivity when used in the form of a carbon nanotube dispersion liquid, and applications thereof.　The present invention provides a carbon nanotube assembly which satisfies the following conditions (1) and (2), and applications thereof.　(1) The ratio of the pore volume to the BET specific surface area is 0.0100 μm to 0.0200 μm.　(2) The ratio of the volume resistivity under the pressure of 20 kN to the volume resistivity under the pressure of 1 kN is 0.18 to 0.30 inclusive.

A method for generating an extreme ultraviolet (EUV) radiation includes simultaneously irradiating two or more target droplets with laser light in an EUV radiation source apparatus to produce EUV radiation and collecting and directing the EUV radiation produced from the two or more target droplet by an imaging mirror.

The invention discloses an extreme ultraviolet laminated diffraction imaging method based on an iterative frequency mask. Comprising the steps that an extreme ultraviolet coherent light source is used for scanning and irradiating a to-be-reconstructed target, and diffraction intensity patterns of all scanning positions are collected; obtaining an initial probe function and an initial reconstruction target function according to the position information of all the scanning positions and the diffraction intensity pattern; meanwhile, an auxiliary variable tensor, a Lagrange multiplier tensor and an adaptive learning rate are initialized; constructing a multi-level spatial frequency mask; according to diffraction intensity patterns of all scanning positions, a multi-level spatial frequency mask is used for updating the probe function step by step from low frequency to high frequency, a target function, an auxiliary variable tensor and a Lagrange multiplier tensor are reconstructed, and the obtained optimal probe function and the optimal reconstruction target function serve as reconstruction results. The method has remarkable advantages in the aspects of reconstruction quality, convergence speed and robustness to low lamination rate and high noise environment, and has important application value for lamination diffraction imaging.

Provided is a reflective mask blank including a substrate, a multilayer reflective film, a protective film, and a light absorbing film having a phase shift function. The light-absorbing film contains ruthenium, tantalum, and nitrogen and does not contain oxygen, and has a ruthenium content of 80 to 90 at%, a tantalum content of 5 to 15% by amount, a nitrogen content of not more than 10 at%, a thickness of 38 to 50 nm, and a reflectance of 10 to 14% and a phase shift of 205 to 225 degrees with respect to exposure light that is light in the extreme ultraviolet range.

Methods, related structures, and related systems are provided for lithography, particularly extreme ultraviolet (EUV) lithography. Presently disclosed methods can comprise forming a carbon underlayer having a high sp3 carbon content. Presently disclosed methods can comprise forming a carbon underlayer by a deposition process that comprises continually generating a plasma and providing a precursor in a sequence of discrete pulses.