42 results about "Plasma formation" patented technology

The invention discloses a high-insulativity coating treatment method of a metal soft magnetic composite material, which belongs to the technical field of metal soft magnetic materials, and comprises the following steps: firstly, performing vacuum dehydration treatment on metal soft magnetic powder, and controlling the moisture content to be not higher than 0.1%; carrying out ultrasonic dispersion treatment on the boron nitride nanosheets to form a suspension, and modifying the magnesium borate nanowires and a silane coupling agent for later use; preparing an inorganic coating solution and an organic coating solution; activating the powder in the fluidized bed by adopting radio frequency plasma of argon-oxygen mixed gas; enabling the activated powder to enter a three-fluid nozzle fluidized bed reactor, and implementing synchronous spray coating in two stages: in the first stage, spraying inorganic coating liquid and applying pulse plasma to form a composite bottom layer; in the second stage, spraying organic coating liquid and carrying out ultraviolet precuring to form a resin layer; and the coated powder is treated by a stepped thermocuring procedure to obtain a finished product. The technical problem of how to improve the insulation coating performance of the metal soft magnetic composite material is solved.

The present disclosure describes systems and methods for controlling the electrical generation of nitric oxide. In some aspects, a system for generating nitric oxide comprises a plasma chamber housing two or more electrodes in communication with a resonant high voltage circuit configured to send a signal to the plasma chamber for generating nitric oxide in a product gas from a flow of a reactant gas, and a controller configured to generate a pulse width modulation signal having multiple harmonic frequencies to excite the resonant high voltage circuit. The controller is configured to adjust the duty cycle of the pulse width modulation signal, the controller selecting the duty cycle based on a target voltage before plasma formation and a target current after plasma formation in the plasma chamber.

The invention discloses a plasma vacuum cavity. The plasma vacuum cavity comprises a cavity body, and the electrostatic chuck is rotatably arranged on one side wall of the cavity. The electrostatic chuck comprises a first surface for placing a wafer. The rotatable angle of the electrostatic chuck is at least 180 degrees, and the electrostatic chuck has a first rotating position state and a second rotating position state. And in the first rotating position state, the first surface faces upwards, and a wafer taking and placing space is arranged above the first surface and is used for realizing taking and placing of the wafer on the first surface. And in the second rotating position state, the first surface faces downwards, and a plasma forming space is arranged below the first surface and is used for forming plasmas and carrying out a plasma process on the wafer which is electrostatically adsorbed on the first surface. According to the invention, particles can be prevented from falling on the surface of the wafer through gravity, the number of wafer defects can be reduced, and the product yield is improved.

The broadband light source includes a confocal sensor assembly configured to measure a surface of a rotatable drum covered with a plasma formation target material. The broadband light source includes a laser source configured to direct pulsed illumination at the rotatable drum to excite the plasma formation target material and emit broadband light as the drum is angularly rotated and axially translated. The broadband light source includes a controller configured to direct the confocal sensor assembly to transmit a confocal light signal to the rotatable drum, record a calibrated measurement of the distance from the confocal sensor assembly to the rotatable drum, direct a cryogenic cooling subsystem to cryogenically cool the rotatable drum, record one or more distance measurements from the sensor head to the rotatable drum, convert the distance measurements to temperature values, and determine whether a target process condition temperature has been achieved.

This utility model discloses a burner head and electric flame stove that reduces ozone leakage, comprising: an upper shell, a lower shell, and multiple plasma combustion devices; the upper shell and the lower shell are respectively provided with multiple mounting holes and connection holes corresponding to the plasma combustion devices; the plasma combustion device includes a cathode tube, a first ceramic component, a first anode component, a second ceramic component, and a second anode component arranged coaxially. This utility model simplifies the disassembly and installation process, reducing labor costs; this utility model utilizes the first anode component to ionize gas to form initial plasma, and utilizes the second anode component to "secondarily excite" the initial plasma to form high-energy excited-state plasma, increasing the number of high-energy particles and further improving ionization efficiency; this utility model's "secondary excitation" causes the unstable ozone ions O₃⁺ to dissociate, reducing ozone emissions.

A lithographic system comprising a lithographic apparatus and a radiation source wherein the radiation source comprises a fuel emitter operable to provide a fuel target at a plasma formation zone, and the radiation source further comprises a laser system operable to provide a laser beam, the laser system includes a laser beam incident on the fuel target to generate EUV radiation for exposing a substrate, where the laser system includes a seed laser and a laser beam amplification system including a series of optical amplifiers and a controller, where the laser beam is incident on the fuel target to generate EUV radiation for exposing the substrate. The controller is configured to operate a final optical amplifier of the series of optical amplifiers at a power level less than a maximum power level of the final optical amplifier during exposure of an exposure region of a substrate.

The present disclosure provides an electron-beam-assisted sputtering device and a method therefor, the device adding, as an electron supply means, an electron beam supply module to a conventional plasma sputtering device, so as to lower the process pressure of sputtering, thereby improving the quality of a deposition thin film. The electron-beam-assisted sputtering device of the present disclosure comprises: a vacuum chamber filled, at a certain process gas pressure, with a process gas for plasma formation; a target which is mounted in the vacuum chamber and to which power is supplied; a substrate onto which a sputtered target atom flies and is deposited due to the forceful collision, with the target, of a cation of the process gas present in the plasma formed on the surface of the target; and an electron beam supply module for supplying electrons toward the surface of the target on which the plasma is formed.

Aiming at the problem that the service life of a device is shortened due to electrode damage caused by ion bombardment, the invention provides a grid regulation and control type vertical structure micro-nano plasma triode which is of a vertical structure and comprises a substrate, a lower electrode, a grid, an upper electrode, a vertical insulating layer and a horizontal insulating layer. The lower electrodes are arranged above the substrate, the grid electrode is arranged above the lower electrodes, the horizontal insulating layers cover the upper layer and the lower layer of the grid electrode, the vertical insulating layers are distributed on the side edges of the grid electrode, the upper electrodes are arranged above the upper horizontal insulating layers, the edges of the upper electrodes are flush with the edges of the vertical insulating layers, and a vertical air channel is formed between the two upper electrodes. The grid electrode can effectively regulate and control ion and electron distribution in a channel, collision ionization is increased, micro-nano plasma formation is promoted, and the working voltage of the device is reduced. In addition, the grid electrode can regulate and control the electric field distribution in the vertical channel, change the ion motion trail, inhibit high-speed ions from directly bombarding the electrode, and prolong the service life of the device.

A system can produce localized spacetime distortions, gravitational waves, sudden transitions in the index of refraction and optical path length changes via high-energy plasma formation. The system includes a high-energy spark-gap arrangement, where an electrical discharge between tungsten tips produces extremely high energy densities in a localized region. The system is tunable and can be driven by either constant or time-varying voltage sources, allowing for different distortion profiles and electromagnetic emission patterns. The system can operate in various environments, including air, inert gases such as helium, and even in vacuum conditions. Multiple spark-gap assemblies can be arranged to create customized distortion shapes and enhanced field effects.

The invention discloses a pre-ignition type high-density ICP (inductively coupled plasma) ion source device and a use method thereof, and particularly relates to the technical field of radio-frequency coupling plasma sources, and the pre-ignition type high-density ICP ion source device comprises an ion source ionization chamber. The auxiliary mode of the lamp filament and the external magnetic field is adopted, the working gas can be more fully ionized to form plasmas, the plasma conversion efficiency of the gas is higher, the plasmas are more gathered in the center of the cavity, the density is higher, and the problems that under the low radio frequency power, the working gas is not prone to being ionized, and the working efficiency is poor are effectively solved. The problem that plasma cannot be formed through excitation is solved, normal operation of a system under low power is achieved, and the influence on a power supply and other equipment under high power is reduced. Meanwhile, the external magnetic field reduces the deposition probability of stray ions on the inner wall of the chamber, so that the ion source ionization chamber is not easy to pollute, and the cooling flow channel additionally arranged on the outer side of the ion source ionization chamber can timely take away heat deposited on the wall of the chamber, thereby greatly prolonging the service life of the ion source ionization chamber.

A quasi-pulsed FRC deuterium-deuterium fusion reactor and its self-sustaining nuclear fuel cycle steady-state power generation method are disclosed. The reactor comprises a linear vacuum chamber, an FRC plasma formation zone, a collision fusion zone, a conical transition section, a plasma formation coil, a fast compression coil, a magnetic mirror coil assembly, a deuterium-tritium feeding system, a zoned vacuum pumping system, and a pulsed power control system. The magnetic mirror coil assembly is located near the collision fusion zone in the conical transition section. Within a single pulse cycle, it sequentially executes four functional modes: compression assistance, magnetic mirror reflection, magnetic bottle confinement, and recovery attenuation. During the recovery attenuation mode, it is reused as a direct energy conversion induction coil. The operation mode employs a trace amount of tritium to catalyze deuterium-deuterium fusion. Tritium and helium-3 are confined to participate in the secondary reaction through magnetic mirror confinement. Between pulses, the difference in chemical adsorption of tritium and the difference in cryogenic condensation of helium-3 are utilized to achieve selective recovery of the two components, forming a quasi-pulsed self-sustaining operation. The power is then converted into steady-state electrical power and connected to the grid via a rectification-storage-inverter system, realizing the internal recycling of tritium and helium-3.

The invention discloses a high-precision detection method for impurity content in high-purity quartz glass and an auxiliary device in the technical field of functional glass analysis and testing, and the method comprises the following steps: S1, carrying out micro-area ablation on the surface of to-be-detected quartz glass through laser to generate to-be-detected plasma; s2, carrying the to-be-detected plasma by using helium to form a to-be-detected mixture, feeding the to-be-detected mixture into ICP-MS / MS, and quantifying trace metal in the to-be-detected mixture; s3, OH free radical fluorescence signals are collected; s4, establishing a standard-sample-free quantitative model; s5, normalizing the trace metal and hydroxyl data to the same coordinate system to obtain the impurity content in the to-be-detected quartz glass; the laser-induced plasma-inductively coupled tandem mass spectrometry and the synchronous double-optical-path laser-induced fluorescence are combined, simultaneous quantification of'one-time laser pulse and all elements + hydroxyl 'is achieved, mass spectrum interference can be eliminated, and accurate quantification of low-mass elements such as Na, K and Li is achieved.

To provide a light source device for improving the measurement accuracy of the thickness of a target material.SOLUTION: A light source device 100 according to the present embodiment includes a target holding part that rotates around a rotation axis, holds a target material of a plasma source on a holding surface, and moves the target material to a plasma formation region, a cover part that covers an opening of the target holding part, and a sensor assembly 7 that acquires a surface position of the target material using light. The sensor assembly 7 includes a support member for supporting the sensor body 71 at a position where the sensor body 71 is located outside the target holding part when viewed from a direction perpendicular to the opening.SELECTED DRAWING: Figure 1

The present disclosure provides a method for fabricating a Janus transition metal dichalcogenide material that includes performing a heating step, performing a plasma-forming step and performing a depositing step. In the heating step, a chalcogen solid is heated so as to form a chalcogen gas. In the plasma-forming step, a reaction gas is introduced so as to assist the chalcogen gas to form a chalcogen plasma. In the depositing step, a substrate is put near the chalcogen plasma so as to form a Janus transition metal dichalcogenide material.

The invention discloses an air-breathing type electromagnetic propulsion device for an ultra-low orbit satellite, and relates to the technical field of electromagnetic acceleration propulsion. In the device, an air-breathing type gas collecting assembly collects and compresses mixed gas of an ultra-low orbit; the radio frequency plasma ionization assembly ionizes the composite working medium gas to form plasma; the plasma heating acceleration assembly injects energy of a high-power radio frequency power supply into plasma through electromagnetic wave coupling, and heating and acceleration of the plasma are achieved. The vector thrust control assembly restrains and controls the heated and accelerated plasma to form a directional ion beam; the electric propulsion main control assembly collects key state parameters of the air suction type gas collection assembly, the radio frequency plasma ionization assembly, the plasma heating acceleration assembly and the vector thrust control assembly through sensors, and closed-loop control is conducted on the four assemblies according to received or preset control instructions and in combination with the key state parameters. Efficient ionization can be achieved under low working medium pressure, and wide-load efficient and stable operation can be achieved.

An exemplary embodiment of the present disclosure provides a method of forming an amorphous carbon-containing film on a substrate housed in a chamber, the method comprising: spraying a silicon-containing source gas into an interior of the chamber; forming a first plasma by supplying a first radio frequency power to the interior of the chamber while spraying the carbon and the plasma forming gas to the interior of the chamber; and forming a second plasma by supplying a second radio frequency power to the interior of the chamber while spraying the plasma forming gas to the interior of the chamber, wherein the first radio frequency power may be greater than the second radio frequency power. Therefore, according to an exemplary embodiment of the present disclosure, a carbon-containing film can be easily formed by a deposition method. That is, an amorphous carbon-containing film can be easily formed by a deposition method. In addition, an amorphous carbon-containing film having an increased carbon content and a reduced impurity content can be formed. In addition, an amorphous carbon-containing film having a dense film quality may be formed.

Disclosed is a plasma vacuum chamber, including: a chamber body; and an electrostatic chuck rotatably provided on a side wall of the chamber body. The electrostatic chuck includes a first surface for placing a wafer. The electrostatic chuck is rotatable at an angle of at least 180°, and the electrostatic chuck has a first rotation position state and a second rotation position state. In the first rotation position state, the first surface faces upward, and a space for picking up and placing the wafer is provided above the first surface to pick and place the wafer from and on the first surface. In the second rotation position state, the first surface faces downward, and a plasma formation space is provided below the first surface, the plasma formation space being used for forming plasma and performing a plasma process on the wafer electrostatically adsorbed on the first surface.

A substrate includes a first outer surface, a second outer surface opposite the first outer surface, and a region having a volume extending from the first outer surface to the second outer surface. At least a portion of the volume of this region defines a cavity of an interstitial site where the interstitial site is defined by a wall having a surface and the surface includes a plasma-formed deposition layer.

The application provides a pipeline detection method, which comprises the following steps: a plasma forming step, controlling a semiconductor process chamber to provide process gas into the chamber through one gas inlet pipeline, and controlling a glow component to ionize the process gas in the chamber to form plasma; an identification step, controlling a light signal detection device to detect the light signal generated by the plasma, comparing the amplitude of the light signal corresponding to each wavelength with the standard light signal corresponding to each process gas, and if the amplitude of the light signal corresponding to each wavelength matches the standard light signal corresponding to a certain process gas, it is determined that the state of the corresponding gas inlet pipeline is normal; repeating the above steps to detect multiple gas inlet pipelines. The pipeline detection method provided by the application can determine the purity of the process gas according to the light signal of the plasma formed by the ionization of the gas, and then identify the process gas corresponding to the pipeline and detect the airtightness of each gas inlet pipeline, thereby improving the maintenance efficiency of the semiconductor process chamber. The application also provides a semiconductor process chamber.

The invention relates to an apparatus for forming a coating on and / or modifying the properties of the inner surface of a hollow article (1), wherein the apparatus comprises a plasma source (2), the plasma source (2) having an elongate shape and comprising a cathode (3) as well as a target (4), wherein the target (4) is a thermionic electron emission source, wherein the target (4) is connected to the cathode (3) in an electrically conductive manner, wherein the plasma source (2) further comprises a masking (5) which partially covers the outer surface of the cathode (3) and the target (4), and which masking (5) is adapted to prevent the formation of plasma on an area covered by the masking (5) during operation of the apparatus, wherein a plasma formation area (6) is provided on the target (4), which plasma formation area (6) is not covered by the masking (5). The invention further relates to a target (4), an arrangement of the apparatus, a method, as well as a hollow article (1).

A broadband light source includes a confocal sensor assembly configured to measure a surface of a rotatable drum coated with plasma-forming target material. The broadband light source includes a laser source configured to direct pulsed illumination to the rotatable drum for exciting the plasma-forming target material and emitting broadband light as the drum is rotated in an angular direction and translated in an axial direction. The broadband light source includes a controller configured to direct the confocal sensor assembly to transmit a confocal optical signal to the rotatable drum, record a calibration measurement of a distance from the confocal sensor assembly to the rotatable drum, direct a cryogenic cooling sub-system to cryogenically cool the rotatable drum, record one or more distance measurements from a sensor head to the rotatable drum, convert the distance measurements to temperature values, and determine whether a target process condition temperature is achieved.

The application discloses a method for inhibiting plasma shielding effect and improving femtosecond laser processing efficiency, and belongs to the technical field of femtosecond laser micro-nano processing of metal materials. The application is based on multi-physical field coupling to solve a femtosecond laser induced metal plasma plume, a two-temperature model is adopted to simulate the interaction between the femtosecond laser and a copper target, and the surface temperature of the copper target is obtained; when the temperature exceeds the boiling point, the copper target generates gas eruption; the DSMC method is adopted to simulate the motion trajectory of each material particle and the collision between the material particle and the background gas, and the change of the speed and direction of the particle is obtained. The application can simulate and imitate the interaction process between the metal plasma plume formed by the eruption and the background gas, thereby accurately characterizing the interaction between the laser and the material, the melting of the material and the formation of the plasma, obtaining the plume distribution under the related scale of the experiment, reducing the shielding effect of the plasma plume on the laser, and improving the femtosecond laser processing efficiency.

A substrate processing method capable of stably performing atomic layer etching without damaging a process chamber is provided. The substrate processing method includes the steps of providing a substrate including a target layer into a chamber, forming a first plasma in the chamber with a first gas including chlorine to perform a first modification on the target layer, forming a second plasma in the chamber with a second gas including oxygen to perform a second modification on the first modified target layer, providing a precursor into the chamber to react the second modified target layer with the precursor, and repeating the forming the first plasma, the forming the second plasma, and the providing the precursor to remove at least a portion of the target layer.

According to various embodiments, a chemical compound of boron with carbon is used as a target material for forming a layer (220) by means of a plasma to which the target material is exposed.

A method for fabricating semiconductor devices is disclosed. The method includes placing a substrate upon a substrate support and placing a target via a target holder, such that an exposed surface of the target is facing the substrate. The method includes supplying plasma-forming gas via a gas source to the target, where the plasma-forming gas is configured to transition the target from a first phase to a second phase. The method includes determining, via a controller, a first value of a first compensation function according to a lifetime of the target, and a second value of a second compensation function according to the lifetime of the target, where the first value is different from the second value. The first portion of formed on the substrate is formed by depositing the target in the second phase based on the first value.

This invention proposes an embedded measurement method for the discharge current of an excimer light source in a deep ultraviolet lithography machine, belonging to the field of measurement technology. Utilizing a ceramic ring in the excimer light source of a deep ultraviolet lithography machine, which serves as high-voltage insulation and supports the conductive rod, two staggered, spaced through-holes are machined on the ceramic ring. Insulated wires are inserted into these holes to form a current coil structure. Current discharges from the peaking capacitor through the conductive rod to the electrodes. During the plasma formation between the cathode and anode, a signal is induced in the current coil. Two taps on the wire are connected to a coaxial connector. The coaxial line exits from the vent of the upper cavity, leading out the current coil signal. The induced signal is recorded by a data acquisition system through an attenuator and a matching load. A ferrite core passes through the coaxial line to suppress common-mode components, calibrating the ceramic ring current coil structure. The induced signal is then processed to obtain the discharge current.

A waste conversion apparatus and a method of implementing the apparatus are provided. The apparatus includes a control system and a feedstock analysis system or an output analysis system. The control system controls a plasma forming device within a reactor of the waste conversion apparatus to apply a plasma jet to a supply of waste feedstock supplied to the system. Integrated feedback control is provided to the plasma forming device based on an analysis by the feedback analysis system to characterize the supply of waste feedstock, and / or an analysis by the output analysis system to characterize a gas product from the reactor.

The invention relates to a dust removal device for solar cell preparation and a solar cell production system.The dust removal device comprises electric field assemblies and magnetic field assemblies, the electric field assemblies are arranged on the two sides of a solar cell, and the electric field assemblies are configured to be used for providing a preset electric field parallel to the surface of the solar cell; plasma generated by the solar cell through graphical processing is separated and accelerated in the electric field direction of the preset electric field; the magnetic field assembly is arranged on the same side of the solar cell and the electric field assembly and used for providing a preset magnetic field to deflect the accelerated plasma to a dust removal area. Plasma can be rapidly removed at the initial stage of plasma formation by using the electric field assembly and the magnetic field assembly, particles in the plasma are prevented from being deposited on the surface of the solar cell, meanwhile, the influence on subsequent laser pulse absorption and transmission is eliminated, the processing effect of the ultrafast laser technology is optimized, the structure is simple, the preparation cost is low, and the application range is wide. And the performance of the solar cell is effectively improved.

A radio-frequency plasma torch is provided. The radio-frequency plasma torch comprises a torch housing with a torch channel, a dielectric sheath, an induction coil that is circumferentially disposed around the dielectric sheath, where the induction coil generates an alternating, high-gradient magnetic field, and at least one conductive rod that is connected to an external voltage source for generating a high-voltage spark discharge. The high-voltage spark discharge and the alternating, high-gradient magnetic field collectively ionize the at least one plasma forming gas for generating a flow of plasma within the torch channel. The plasma torch also includes an impeller unit that is rotatably mounted within the torch channel of the torch housing, proximate the inlet section of the torch housing, such that when the impeller unit is driven to rotate, the rotation of the turbine induces a reverse vortex flow of plasma forming gas within the torch channel.

A method for plasma magneto-inertial fusion. A trigger breakdown time is determined for each of a plurality of solid-state switch arrays by measuring a duration time from initiation of a control signal to plasma formation for each of a plurality of pulsed power driven electromagnetic particle accelerators. The particle accelerators are positioned to converge corresponding plasma discharges towards a parametrically defined volume. A timing profile is generated for each of the particle accelerators based on the trigger breakdown times. Timing offsets are determined for each of the switch arrays based on their trigger breakdown time to compensate for timing variations among the particle accelerators. The switch arrays are triggered in accordance with their timing offsets to converge the corresponding plasma discharges towards the defined volume.