82 results about "Plasma formation" patented technology

The invention discloses a plasma forming apparatus and a plasma source system. The plasma forming device comprises a radio frequency power supply module, an impedance matching module, an acquisition control module and at least two distribution modules, the output end of the radio frequency power supply module is electrically connected with the input end of the impedance matching module; the input end of each distribution module is electrically connected with the output end of the impedance matching module; the distribution modules are positioned on one side of an insulating window in the plasma reaction chamber and are sequentially arranged along a first direction; the distribution module is used for coupling the radio frequency energy output by the radio frequency power supply module to a corresponding area of the plasma reaction chamber; and the acquisition control module is used for respectively acquiring the current signal in each distribution module, and independently adjusting the output power of the corresponding distribution module based on the acquired current signal of each distribution module. The plasma forming device and the plasma source system provided by the invention are low in cost, simple in impedance debugging and applicable to a large-area and high-uniformity plasma coating process.

The invention discloses a high-insulativity coating treatment method of a metal soft magnetic composite material, which belongs to the technical field of metal soft magnetic materials, and comprises the following steps: firstly, performing vacuum dehydration treatment on metal soft magnetic powder, and controlling the moisture content to be not higher than 0.1%; carrying out ultrasonic dispersion treatment on the boron nitride nanosheets to form a suspension, and modifying the magnesium borate nanowires and a silane coupling agent for later use; preparing an inorganic coating solution and an organic coating solution; activating the powder in the fluidized bed by adopting radio frequency plasma of argon-oxygen mixed gas; enabling the activated powder to enter a three-fluid nozzle fluidized bed reactor, and implementing synchronous spray coating in two stages: in the first stage, spraying inorganic coating liquid and applying pulse plasma to form a composite bottom layer; in the second stage, spraying organic coating liquid and carrying out ultraviolet precuring to form a resin layer; and the coated powder is treated by a stepped thermocuring procedure to obtain a finished product. The technical problem of how to improve the insulation coating performance of the metal soft magnetic composite material is solved.

A catheter system for pressure wave and inertial impulse generation for intravascular lesion disruption at a treatment site includes a catheter including an elongate shaft and balloon coupled to the elongate shaft. The catheter system includes a light guide disposed along the elongate shaft and at least partially within the balloon, where the light guide is in optical communication with a light source and a balloon fluid. The catheter can include a first focusing element located at a distal portion of the light guide and in optical communication with the light source. The first focusing element can direct light from within the light guide to a first location at a first distance away from the distal portion of the light guide to initiate plasma formation in the balloon fluid away from the distal portion and to cause rapid bubble formation, thereby imparting pressure waves at the treatment site.

Methods and apparatus for processing a substrate in a process chamber include: positioning a substrate on a substrate support in a process volume so that the substrate is opposite a sputter target comprising indium tin oxide; flowing a plasma-forming gas into the process volume; and sputtering the indium tin oxide onto the substrate while applying AC bias to the substrate.

The application provides a kind of multilayer heterogeneous material ultrafast laser integrated connection method and equipment, specifically includes: chip pad, spring pin and quartz glass are stacked and fixed on three-dimensional motion platform, adjust platform to make laser focal plane be located in the central of pin;For pad and pin connection, space shaping obtains high repetition rate ultrafast laser with high Rayleigh length, is acted on the periphery of pin by spiral line or concentric circular scanning of two-dimensional galvanometer, excites metal plasma, forms molten metal, is deposited in the aperture of pin and pad contact, with reverse heating, molten metal continuously accumulates, realizes heterogeneous metal welding;For pin and glass connection, laser transmits through quartz glass, excites plasma at metal interface, forms molten metal with increased volume, fills material interface gap, regulates non-optical contact to optical contact welding;Two kinds of heterogeneous materials are successfully welded by single scanning, until the welding of entire pin array is completed, realizes efficient integrated packaging.

The present disclosure describes systems and methods for controlling the electrical generation of nitric oxide. In some aspects, a system for generating nitric oxide comprises a plasma chamber housing two or more electrodes in communication with a resonant high voltage circuit configured to send a signal to the plasma chamber for generating nitric oxide in a product gas from a flow of a reactant gas, and a controller configured to generate a pulse width modulation signal having multiple harmonic frequencies to excite the resonant high voltage circuit. The controller is configured to adjust the duty cycle of the pulse width modulation signal, the controller selecting the duty cycle based on a target voltage before plasma formation and a target current after plasma formation in the plasma chamber.

The invention discloses a plasma vacuum cavity. The plasma vacuum cavity comprises a cavity body, and the electrostatic chuck is rotatably arranged on one side wall of the cavity. The electrostatic chuck comprises a first surface for placing a wafer. The rotatable angle of the electrostatic chuck is at least 180 degrees, and the electrostatic chuck has a first rotating position state and a second rotating position state. And in the first rotating position state, the first surface faces upwards, and a wafer taking and placing space is arranged above the first surface and is used for realizing taking and placing of the wafer on the first surface. And in the second rotating position state, the first surface faces downwards, and a plasma forming space is arranged below the first surface and is used for forming plasmas and carrying out a plasma process on the wafer which is electrostatically adsorbed on the first surface. According to the invention, particles can be prevented from falling on the surface of the wafer through gravity, the number of wafer defects can be reduced, and the product yield is improved.

The invention discloses a furnace end capable of reducing ozone overflow and an electric flame stove. The furnace end comprises an upper shell, a lower shell and a plurality of plasma combustion devices. The upper shell and the lower shell are respectively provided with a plurality of mounting holes and connecting holes corresponding to the plasma combustion devices; the plasma combustion device comprises a cathode tube, a first ceramic piece, a first anode piece, a second ceramic piece and a second anode piece which are coaxially arranged. According to the invention, the dismounting and mounting procedures are simplified, and the labor cost is reduced; the first anode piece is used for ionizing gas to form initial plasma, and the second anode piece is used for secondarily exciting the initial plasma to form high-energy excited state plasma, so that the number of high-energy particles is increased, and the ionization efficiency is further improved; ozone ions O with poor stability are dissociated through secondary excitation, and ozone emission is reduced.

The broadband light source includes a confocal sensor assembly configured to measure a surface of a rotatable drum covered with a plasma formation target material. The broadband light source includes a laser source configured to direct pulsed illumination at the rotatable drum to excite the plasma formation target material and emit broadband light as the drum is angularly rotated and axially translated. The broadband light source includes a controller configured to direct the confocal sensor assembly to transmit a confocal light signal to the rotatable drum, record a calibrated measurement of the distance from the confocal sensor assembly to the rotatable drum, direct a cryogenic cooling subsystem to cryogenically cool the rotatable drum, record one or more distance measurements from the sensor head to the rotatable drum, convert the distance measurements to temperature values, and determine whether a target process condition temperature has been achieved.

A laser-sustained broadband light source includes a gas containment structure and a plurality of jet nozzles. The jet nozzles are configured to direct a plurality of liquid jets of plasma-forming material in directions such that they collide with each other within the gas containment structure. The laser-sustained broadband light source further includes a laser pump source configured to generate an optical pump to sustain a plasma in the region of the gas containment structure at the collision points of the plurality of liquid jets; and a light collector element configured to collect broadband light emitted from the plasma.

This utility model discloses a burner head and electric flame stove that reduces ozone leakage, comprising: an upper shell, a lower shell, and multiple plasma combustion devices; the upper shell and the lower shell are respectively provided with multiple mounting holes and connection holes corresponding to the plasma combustion devices; the plasma combustion device includes a cathode tube, a first ceramic component, a first anode component, a second ceramic component, and a second anode component arranged coaxially. This utility model simplifies the disassembly and installation process, reducing labor costs; this utility model utilizes the first anode component to ionize gas to form initial plasma, and utilizes the second anode component to "secondarily excite" the initial plasma to form high-energy excited-state plasma, increasing the number of high-energy particles and further improving ionization efficiency; this utility model's "secondary excitation" causes the unstable ozone ions O₃⁺ to dissociate, reducing ozone emissions.

Methods and apparatus for processing a substrate in a process chamber include: positioning a substrate on a substrate support in a process volume so that the substrate is opposite a sputter target comprising indium tin oxide; flowing a plasma-forming gas into the process volume; and sputtering the indium tin oxide onto the substrate while applying AC bias to the substrate.

A lithographic system comprising a lithographic apparatus and a radiation source wherein the radiation source comprises a fuel emitter operable to provide a fuel target at a plasma formation zone, and the radiation source further comprises a laser system operable to provide a laser beam, the laser system includes a laser beam incident on the fuel target to generate EUV radiation for exposing a substrate, where the laser system includes a seed laser and a laser beam amplification system including a series of optical amplifiers and a controller, where the laser beam is incident on the fuel target to generate EUV radiation for exposing the substrate. The controller is configured to operate a final optical amplifier of the series of optical amplifiers at a power level less than a maximum power level of the final optical amplifier during exposure of an exposure region of a substrate.

The present disclosure provides an electron-beam-assisted sputtering device and a method therefor, the device adding, as an electron supply means, an electron beam supply module to a conventional plasma sputtering device, so as to lower the process pressure of sputtering, thereby improving the quality of a deposition thin film. The electron-beam-assisted sputtering device of the present disclosure comprises: a vacuum chamber filled, at a certain process gas pressure, with a process gas for plasma formation; a target which is mounted in the vacuum chamber and to which power is supplied; a substrate onto which a sputtered target atom flies and is deposited due to the forceful collision, with the target, of a cation of the process gas present in the plasma formed on the surface of the target; and an electron beam supply module for supplying electrons toward the surface of the target on which the plasma is formed.

Aiming at the problem that the service life of a device is shortened due to electrode damage caused by ion bombardment, the invention provides a grid regulation and control type vertical structure micro-nano plasma triode which is of a vertical structure and comprises a substrate, a lower electrode, a grid, an upper electrode, a vertical insulating layer and a horizontal insulating layer. The lower electrodes are arranged above the substrate, the grid electrode is arranged above the lower electrodes, the horizontal insulating layers cover the upper layer and the lower layer of the grid electrode, the vertical insulating layers are distributed on the side edges of the grid electrode, the upper electrodes are arranged above the upper horizontal insulating layers, the edges of the upper electrodes are flush with the edges of the vertical insulating layers, and a vertical air channel is formed between the two upper electrodes. The grid electrode can effectively regulate and control ion and electron distribution in a channel, collision ionization is increased, micro-nano plasma formation is promoted, and the working voltage of the device is reduced. In addition, the grid electrode can regulate and control the electric field distribution in the vertical channel, change the ion motion trail, inhibit high-speed ions from directly bombarding the electrode, and prolong the service life of the device.

A substrate processing method capable of stably performing atomic layer etching without damaging a process chamber comprises providing a substrate including a target layer in a chamber, forming a first plasma in the chamber by using a first gas containing chlorine to first reform the target layer, forming a second plasma in the chamber by using a second gas containing oxygen to second reform the first reformed target layer, providing a precursor into the chamber to react the second reformed target layer with the precursor, and removing at least a portion of the target layer by repeating forming the first plasma, forming the second plasma, and providing the precursor.

A system can produce localized spacetime distortions, gravitational waves, sudden transitions in the index of refraction and optical path length changes via high-energy plasma formation. The system includes a high-energy spark-gap arrangement, where an electrical discharge between tungsten tips produces extremely high energy densities in a localized region. The system is tunable and can be driven by either constant or time-varying voltage sources, allowing for different distortion profiles and electromagnetic emission patterns. The system can operate in various environments, including air, inert gases such as helium, and even in vacuum conditions. Multiple spark-gap assemblies can be arranged to create customized distortion shapes and enhanced field effects.

The invention discloses a pre-ignition type high-density ICP (inductively coupled plasma) ion source device and a use method thereof, and particularly relates to the technical field of radio-frequency coupling plasma sources, and the pre-ignition type high-density ICP ion source device comprises an ion source ionization chamber. The auxiliary mode of the lamp filament and the external magnetic field is adopted, the working gas can be more fully ionized to form plasmas, the plasma conversion efficiency of the gas is higher, the plasmas are more gathered in the center of the cavity, the density is higher, and the problems that under the low radio frequency power, the working gas is not prone to being ionized, and the working efficiency is poor are effectively solved. The problem that plasma cannot be formed through excitation is solved, normal operation of a system under low power is achieved, and the influence on a power supply and other equipment under high power is reduced. Meanwhile, the external magnetic field reduces the deposition probability of stray ions on the inner wall of the chamber, so that the ion source ionization chamber is not easy to pollute, and the cooling flow channel additionally arranged on the outer side of the ion source ionization chamber can timely take away heat deposited on the wall of the chamber, thereby greatly prolonging the service life of the ion source ionization chamber.

The present invention belongs to the field of automatic control technology, and specifically relates to an intelligent torch ignition device based on high-frequency induction heating. The device includes: an eddy current heating unit for arranging a high-frequency coil in the ignition area, generating an alternating magnetic field through the high-frequency coil, inducing eddy currents in the metal chip or metal catalyst inside the torch, performing induction heating, and thus forming a high-density heat source; a critical temperature rise determination unit for determining whether the temperature of the mixed gas exceeds the critical temperature when the mixed gas is heated by radiation and heat conduction from the metal chip or metal catalyst; a high-frequency ionization unit for performing electric field excitation to maximize plasma formation efficiency; and a fire core self-sustaining control unit for calculating the fire core radius in real time. If the fire core radius does not reach the self-sustaining threshold, induction heating and electric field excitation are continued. The present invention significantly improves the response speed, ignition success rate, and environmental adaptability of the ignition system.

A radiation source has a source of target material configured to direct a target material to a plasma formation location, and a radiation source housing with an opening through which EUV radiation can exit the radiation source. A laser system is configured to direct an infrared radiation beam at the plasma formation location to generate EUV radiation when the infrared radiation beam is incident on the target material. The radiation source is configured such that a first portion of the radiation source housing receives a majority of the infrared radiation beam when the infrared radiation beam is not incident upon the target material, and wherein the first portion of the radiation source housing is configured to reflect the infrared radiation from the infrared radiation beam to other portions of the housing which are further away from the opening of the radiation source housing than the first portion.

A quasi-pulsed FRC deuterium-deuterium fusion reactor and its self-sustaining nuclear fuel cycle steady-state power generation method are disclosed. The reactor comprises a linear vacuum chamber, an FRC plasma formation zone, a collision fusion zone, a conical transition section, a plasma formation coil, a fast compression coil, a magnetic mirror coil assembly, a deuterium-tritium feeding system, a zoned vacuum pumping system, and a pulsed power control system. The magnetic mirror coil assembly is located near the collision fusion zone in the conical transition section. Within a single pulse cycle, it sequentially executes four functional modes: compression assistance, magnetic mirror reflection, magnetic bottle confinement, and recovery attenuation. During the recovery attenuation mode, it is reused as a direct energy conversion induction coil. The operation mode employs a trace amount of tritium to catalyze deuterium-deuterium fusion. Tritium and helium-3 are confined to participate in the secondary reaction through magnetic mirror confinement. Between pulses, the difference in chemical adsorption of tritium and the difference in cryogenic condensation of helium-3 are utilized to achieve selective recovery of the two components, forming a quasi-pulsed self-sustaining operation. The power is then converted into steady-state electrical power and connected to the grid via a rectification-storage-inverter system, realizing the internal recycling of tritium and helium-3.

A plasma device is disclosed. The plasma device of the present invention may comprise a magnetic field generation unit, which forms magnetic flux that passes through the inside of a housing in which plasma is formed, wherein at least a part of the magnetic flux does not make contact with an anode unit. The plasma device may comprise: a housing extending upward from a lower end to an upper end, and having a hollow portion formed therein; a first cathode unit including a first body connected to the upper end of the housing, and a withdrawal hole, as a hole formed in the first body, communicating with the hollow portion of the housing; a second cathode unit including a second body connected to the lower end of the housing; an anode unit positioned in the hollow portion of the housing, and positioned between the first cathode unit and the second cathode unit; and a magnetic field generation unit forming magnetic flux in the hollow portion of the housing.

The present invention provides a sputtering method, comprising the following steps: S1, introducing process gas into a reaction chamber; S2, turning on a sputtering power supply, and adjusting the output power of the sputtering power supply loaded on a target material to a first sputtering power value to start plasma formation; S3, increasing the output power to a second sputtering power value according to a first preset rule to deposit a thin film on a substrate; S4, gradually reducing the output power to zero according to a second preset rule; S5, judging whether the thickness of the thin film reaches the target thickness, if so, proceeding to step S6; if not, returning to step S2; S6, turning off the sputtering power supply, and stopping the introduction of process gas into the reaction chamber; wherein, step S4 is performed first, and then step S5; or, step S5 is performed first, and then step S4. The sputtering method provided by the present invention can avoid the generation of micro-sparking and particle contamination, thereby ensuring the performance of the thin film and improving the electrical performance and yield of the device.

A plasma forming device includes a housing unit and an electrode unit. The housing unit includes an inner housing having a first gas inlet, a reaction channel that spatially communicates with the first gas inlet, and an inner housing opening that spatially communicates with the reaction channel. The first gas inlet is adapted for entrance of a first gas therethrough into the reaction channel. The electrode unit includes an inner dielectric tube extending in the reaction channel, an inner electrode sleeved on the inner dielectric tube, an outer dielectric tube disposed in the reaction channel, and surrounding the inner electrode and a portion of the inner dielectric tube, and an outer electrode sleeved on the outer dielectric tube and aligned with the inner electrode. The inner electrode and the outer dielectric tube cooperatively define a curved passage that is adapted for passage of the first gas therethrough.

The purpose of the present invention is to provide a plasma processing device for supplying radicals to a substrate.　This plasma processing device includes: a processing container; a placement table provided in the processing container; a top wall and a side wall that define a plasma formation space in the processing container; and a plurality of electrode pairs that are provided on the side wall and to which high-frequency power is supplied.

Examples regarding the use of extreme ultraviolet (EUV) absorbing photoemissive dopants that bind to atoms in a hydrogen contributing photosensitive underlayer for photoresist are disclosed. One example provides a method of forming a hydrogen contributing photosensitive underlayer on a substrate. The method comprises exposing the substrate to a dopant precursor and a hydrocarbon precursor, wherein the dopant precursor comprises an extreme ultraviolet (EUV) absorbing photoemissive dopant bonded within a carbon-containing polymerizable molecule. The method further comprises exposing the substrate to radical species formed by a plasma. The method further comprises forming a hydrogen contributing photosensitive underlayer on the substrate from the dopant precursor and the hydrocarbon precursor by reaction of the dopant precursor and the hydrocarbon precursor with the radical species.

A steam turbine member suppresses adhesion of scale over a long period of time without impairing corrosion resistance or the like of a turbine. A method for manufacturing a coated tubular member having a deposited amorphous carbon film “m” formed on an inner surface of a tubular member, may include attaching lids to one end and another end of a tubular member, the lids including opening portions through which a gas can be introduced and discharged. The method may include depressurizing an inside of the tubular member by discharging the gas inside the tubular member from the opening portion of the lid on the one end; generating plasma inside the tubular member by applying a negative voltage to the tubular member and introducing a plasma-forming gas “g” into the tubular member from the opening portion of the lid on the other end; and introducing a raw material gas “g” of a deposited amorphous carbon film into the tubular member from the opening portion of the lid on the other end.

This invention discloses a cluster plate and a plasma processing apparatus. The cluster plate includes: a plasma forming surface, a gas supply surface, a plurality of gas flow paths, a plurality of hollow cathode slits formed on the plasma forming surface, and a plurality of gas outlets disposed within each of the plurality of hollow cathode slits. The plurality of hollow cathode slits are arranged in a non-intersecting manner. The plurality of gas flow paths are opened within each of the plurality of hollow cathode slits. The plasma forming surface has a plurality of depth-defined regions. In each of the plurality of depth-defined regions, the depth of each of the plurality of hollow cathode slits is set to increase in the thickness direction. The boundaries between two adjacent depth-defined regions and the plurality of hollow cathode slits do not intersect each other.

The invention discloses a high-precision detection method for impurity content in high-purity quartz glass and an auxiliary device in the technical field of functional glass analysis and testing, and the method comprises the following steps: S1, carrying out micro-area ablation on the surface of to-be-detected quartz glass through laser to generate to-be-detected plasma; s2, carrying the to-be-detected plasma by using helium to form a to-be-detected mixture, feeding the to-be-detected mixture into ICP-MS / MS, and quantifying trace metal in the to-be-detected mixture; s3, OH free radical fluorescence signals are collected; s4, establishing a standard-sample-free quantitative model; s5, normalizing the trace metal and hydroxyl data to the same coordinate system to obtain the impurity content in the to-be-detected quartz glass; the laser-induced plasma-inductively coupled tandem mass spectrometry and the synchronous double-optical-path laser-induced fluorescence are combined, simultaneous quantification of'one-time laser pulse and all elements + hydroxyl 'is achieved, mass spectrum interference can be eliminated, and accurate quantification of low-mass elements such as Na, K and Li is achieved.

To provide a light source device for improving the measurement accuracy of the thickness of a target material.SOLUTION: A light source device 100 according to the present embodiment includes a target holding part that rotates around a rotation axis, holds a target material of a plasma source on a holding surface, and moves the target material to a plasma formation region, a cover part that covers an opening of the target holding part, and a sensor assembly 7 that acquires a surface position of the target material using light. The sensor assembly 7 includes a support member for supporting the sensor body 71 at a position where the sensor body 71 is located outside the target holding part when viewed from a direction perpendicular to the opening.SELECTED DRAWING: Figure 1