28 results about "Process region" patented technology

The invention belongs to the field of low-code platform development, and discloses a cross-platform low-code development system and method supporting code export. The method comprises the following steps: dividing a visual layout in a low-code platform into a central process region and R sub-process regions according to a preset rule; obtaining center structure data and sublevel structure data of the target project; obtaining a total logic complexity value of the project based on the central structure data and the sublevel structure data; obtaining an initial flow chart corresponding to the target project; inputting the central structure data, the sub-level structure data, the total logic complexity value and the initial flow chart into a pre-trained flow optimization model to obtain an optimized target flow chart; packaging a target sub-flow in the target flow chart to serve as a reusable plug-in of a cross-project flow; and the running efficiency of the developer project is effectively improved.

A substrate process station includes a housing including a transport region and process region. The process station further includes a magnetic levitation assembly disposed in the transport region configured to levitate and propel a substrate carrier. The magnetic levitation assembly includes a first track segment including first rails disposed in the transport region and below the process region, wherein the first rails each include a first plurality of magnets. The process station further includes a pedestal assembly comprising a pedestal disposed within the housing. The pedestal is moveable between a pedestal transfer position and a process position, wherein the pedestal is disposed between the first rails in the pedestal transfer position to receive a substrate from the substrate carrier, and wherein the pedestal is moveable between the first rails to position the received substrate in the process region in the process position.

Apparatuses and methods for operating at least two tools in a first and at least a second processing area, wherein in each processing area a number of machining locations is assigned to the tool by which first components carried by a component web are conveyed along a track through the first and the at least second processing area, wherein the total number of tools in the apparatus is less than the number of machining locations in each processing area, wherein the track comprises a number of partial paths corresponding to the number of machining locations, wherein the tool of each processing area is adapted such as to couple respective second components to respective first components at each associated machining location in its processing area, and wherein the apparatus comprises a control unit adapted to operate in response to a conveying movement of the component web along the track.

Semiconductor manufacturing processing chambers with recycling capability and methods of recycling a chemical precursor are described. The processing chamber comprises a chamber body with a substrate support. The substrate support is spaced from the chamber lid to create a process region. A gas inlet provides a flow of gas to the process region and a recirculation housing comprising a first recirculation volume and a second recirculation volume is in fluid communication with the process region. At least one first exhaust valve is connected to the first recirculation plenum through a first recirculation inlet line and at least one second exhaust valve is connected to the second recirculation plenum through the second recirculation inlet line. An actuator moves a movable wall within the recirculation housing to change the volume of the first recirculation volume and the second recirculation volume.

The application provides a wafer appearance detection method based on process regions, comprising the following steps: obtaining a standard wafer on a wafer and performing process-based region slicing on the standard wafer; aligning a to-be-detected wafer on the wafer by selecting feature points of the standard wafer; extracting corresponding process regions of the to-be-detected wafer based on different process regions of the standard wafer; and performing defect detection on different process regions of the to-be-detected wafer by using corresponding process detection methods. The application extracts the to-be-detected wafer based on different processes, and uses different detection methods to perform defect detection on different process regions, thereby improving the detection accuracy and efficiency. Meanwhile, the same standard wafer is used as a comparison standard for all to-be-detected wafers, thereby improving the detection robustness.

The invention relates to a method and a device for producing micro parts and micro components by means of additive manufacturing using micro laser sintering. A pulverulent agglomerating material (1) is applied in layers from a first powder reservoir (2), and the material is melted using laser light (4) after being applied. The invention is characterized in that the material (1) located in the first powder reservoir (2), which is open in the direction of a processing plane, is an agglomerating powder, the particle size (1) of which equals maximally 20 μm, and a force (F1) is applied to the agglomerating material (1) in the direction of a substrate (3) in a process region (100) at least during the application process, the agglomerating material (1) behaving as a fluid while being applied as a result of said force. For this purpose, the device has a horizontally aligned base (5) which is interrupted at least in some regions in a process region (100) above a substrate (3) and has a first powder reservoir (2) which is arranged above the base (5) in a horizontally movable manner over the base (5) and which comprises an interior for receiving a pulverulent agglomerating material (1), the particle size (1) of which equals maximally 20 μm, wherein the first powder reservoir (2) has a first means (6) in the interior thereof for applying a first axial force (F1), which acts in the direction of the base (5) and the substrate (3), to the pulverulent agglomerating material (1) located in the interior, the agglomerating material (1) behaving as a fluid in the process region (100) at least while being applied as a result of said force.

A method for forming a silicon boron nitride layer is provided. The method includes positioning a substrate on a susceptor in a process region within a process chamber; heating the susceptor that holds the substrate; and introducing a first flow of a first process gas and a second flow of a second process gas into the process region. The first flow of the first process gas contains silane, ammonia, helium, nitrogen, argon, and hydrogen. The second flow of the second process gas contains diborane and hydrogen. The method also includes forming a plasma simultaneously with the first flow of the first process gas and the second flow of the second process gas arriving in the process region, and exposing the substrate to the first process gas, the second process gas, and the plasma to deposit the silicon boron nitride layer on the substrate.

A substrate process station includes a housing including a transport region and process region. The process station further includes a magnetic levitation assembly disposed in the transport region configured to levitate and propel a substrate carrier. The magnetic levitation assembly includes a first track segment including first rails disposed in the transport region and below the process region, wherein the first rails each include a first plurality of magnets. The process station further includes a pedestal assembly comprising a pedestal disposed within the housing. The pedestal is moveable between a pedestal transfer position and a process position, wherein the pedestal is disposed between the first rails in the pedestal transfer position to receive a substrate from the substrate carrier, and wherein the pedestal is moveable between the first rails to position the received substrate in the process region in the process position.

According to various embodiments, a transport system (100) can have: a plurality of transport rollers (112) which provide a transport path (111) and are designed to transport a transport article (110, 300) along the transport path (111) through a first processing region (151) and a second processing region (153); the plate-type transport article (110, 300), which has an electrically conductive potential-receiving surface; a plurality of potential paths (161, 163, 165) which are arranged one behind the other along the transport path (111) and are galvanically separated from one another; of which: a first potential path is designed to couple a process potential of a first type into the potential-receiving surface when the potential-receiving surface is arranged at least partly in the first processing region (151); a second potential path is designed to couple a process potential of a second type into the potential-receiving surface when the potential-receiving surface is arranged at least partly in the second processing region (153); a third potential path is designed to galvanically separate the potential-receiving surface when the potential-receiving surface is arranged between the first processing region (151) and the second processing region (153); wherein a distance of the first processing region (151) from the second processing region (153) is smaller than a sum of: an extent of the potential-receiving surface along the transport path (111) and a distance between directly adjacent axes of rotation of the plurality of transport rollers (112).

Provided is a technology relating to a substrate processing apparatus. A substrate processing apparatus may comprise a process chamber, a substrate support structure, and a gas injection structure. The process chamber comprises a plurality of process regions in which a plurality of substrates are processed. The substrate support structure may support a plurality of substrates which are spaced apart certain intervals from each other so that one substrate is positioned in each of the plurality of process regions, and may rotate so that the plurality of substrates may sequentially pass through the plurality of process regions. The gas injection structure is positioned above the process chamber so as to face the substrate support structure. The gas injection structure comprises: a plurality of process gas injection portions which are each provided for one of the plurality of process regions and which inject process gas respectively to the facing substrates; and a plurality of purge gas injection portions which are positioned to respectively surround the process gas injection portions in the plurality of process regions and inject purge gas toward the substrate support structure.

A processing method of a processing apparatus is provided, including step 1, step 2, step 3, and step 4. Step 1 is providing an object having a processed surface, and dividing the processed surface into multiple processed regions, where there is at least one workpiece on each processed region. Step 2 is performing path computation according to the workpiece on each processed region, and generating a processing path in each processed region, where the processing paths in the processed regions are different from each other. Step 3 is performing processing operation by a processing apparatus according to the processing path in one of the processed regions obtained from step 2. Step 4 is moving the processing apparatus to a next processed region after finishing the processing operation on each workpiece in the one of the processed regions. A processing system is also provided.

A planning device and method for planning local selective irradiation of a machining region with an energy beam and a manufacturing device and method for additive manufacturing of a component from a powder material. The invention relates to a method for planning the localized selective irradiation of a machining region (15) with at least one energy beam (11) in order to produce at least one component (3) by means of the at least one energy beam (11) layer by layer from a plurality of powder material layers of a powder material (5) arranged in the machining region (15) in the layer sequence in chronological succession, a plurality of irradiation regions (21) are planned to be irradiated with the at least one energy beam (11) on the processing region (15), and wherein, for the irradiation region (21) of the plurality of irradiation regions (21), a respective associated parameter value of at least one irradiation parameter is selected, an associated parameter value is selected as a function of the association of the corresponding irradiation region (21) with one of the at least two sub-regions (23) of the processing region (15), in particular, an irradiation plan is acquired for locally selectively irradiating the processing region (15) with the at least one energy beam (11) in at least one layer of powder material.

An embodiment of a microelectronic assembly includes a first integrated circuit (IC) die having a first memory circuit and a second memory circuit; a second IC die; a third IC die; and packaging the substrate. The first IC die includes: a first portion including a first active region and a first back end region in contact with the first active region; and a second portion including a second active region and a second rear end region in contact with the second active region. In plan view, the second portion is surrounded by the first portion, the first memory circuit is in the first portion, the second memory circuit is in the second portion, the first active region includes a transistor larger than a transistor in the second active region, and the first back end region includes a conductive trace, the conductive traces have a pitch greater than a pitch of the conductive traces in the second back end region.

Semiconductor manufacturing processing chambers with recycling capability and methods of recycling a chemical precursor are described. The processing chamber comprises a chamber body with a substrate support. The substrate support is spaced from the chamber lid to create a process region. A gas inlet provides a flow of gas to the process region and a recirculation housing comprising a first recirculation volume and a second recirculation volume is in fluid communication with the process region. At least one first exhaust valve is connected to the first recirculation plenum through a first recirculation inlet line and at least one second exhaust valve is connected to the second recirculation plenum through the second recirculation inlet line. An actuator moves a movable wall within the recirculation housing to change the volume of the first recirculation volume and the second recirculation volume.

The present invention relates to a substrate processing apparatus including a process chamber, a substrate support structure, and a gas injection structure. The process chamber can include a plurality of process regions for processing a plurality of substrates. The substrate support structure is disposed in the process chamber and supports a plurality of spaced substrates at a predetermined spacing, with one substrate for each of the plurality of process regions, and is rotatable to sequentially pass the plurality of substrates through the plurality of process regions. The gas injection structure is disposed above the process chamber to face the substrate support structure. The gas injection structure can include a plurality of process gas injection portions, one for each of the plurality of process regions, to inject process gas toward the facing substrate, and a plurality of purge gas injection portions disposed to surround the process gas injection portions for each of the plurality of process regions and to inject purge gas toward the substrate support structure.

According to various embodiments, a transport system (100) can have: a plurality of transport rollers (112) which provide a transport path (111) and are designed to transport a transport article (110, 300) along the transport path (111) through a first processing region (151) and a second processing region (153); the plate-type transport article (110, 300), which has an electrically conductive potential-receiving surface; a plurality of potential paths (161, 163, 165) which are arranged one behind the other along the transport path (111) and are galvanically separated from one another; of which: a first potential path is designed to couple a process potential of a first type into the potential-receiving surface when the potential-receiving surface is arranged at least partly in the first processing region (151); a second potential path is designed to couple a process potential of a second type into the potential-receiving surface when the potential-receiving surface is arranged at least partly in the second processing region (153); a third potential path is designed to galvanically separate the potential-receiving surface when the potential-receiving surface is arranged between the first processing region (151) and the second processing region (153); wherein a distance of the first processing region (151) from the second processing region (153) is smaller than a sum of: an extent of the potential-receiving surface along the transport path (111) and a distance between directly adjacent axes of rotation of the plurality of transport rollers (112).

A substrate process station includes a housing including a transport region and process region. The process station further includes a magnetic levitation assembly disposed in the transport region configured to levitate and propel a substrate carrier. The magnetic levitation assembly includes a first track segment including first rails disposed in the transport region and below the process region, wherein the first rails each include a first plurality of magnets. The process station further includes a pedestal assembly comprising a pedestal disposed within the housing. The pedestal is moveable between a pedestal transfer position and a process position, wherein the pedestal is disposed between the first rails in the pedestal transfer position to receive a substrate from the substrate carrier, and wherein the pedestal is moveable between the first rails to position the received substrate in the process region in the process position.

An example semiconductor processing system includes a process chamber defining a process region. The semiconductor processing system can include a foreline coupled with the process chamber. The foreline can define a fluid conduit. The semiconductor processing system can include a foreline trap coupled with a distal end of the foreline. The semiconductor processing system can include a removable insert provided within an interior of the foreline trap. The semiconductor processing system can include a throttle valve coupled with the foreline trap downstream of the removable insert.

Methods for forming a silicon boron nitride layer are provided. The method includes positioning a substrate on a susceptor in a process region within a process chamber; heating a susceptor holding the substrate; and introducing a first gas stream of the first process gas and a second gas stream of the second process gas into the process region. The first gas stream of the first process gas contains silane, ammonia, helium, nitrogen, argon, and hydrogen. A second gas stream of the second process gas contains diborane and hydrogen. The method further includes forming a plasma concurrently with the first flow of the first process gas and the second flow of the second process gas reaching the process region, and exposing the substrate to the first process gas, the second process gas, and the plasma to deposit a silicon boron nitride layer on the substrate.

The substrate processing station includes a housing including a transfer region and a process region. The process station further includes a magnetic levitation assembly disposed in the transfer region configured to levitate and propel the substrate carrier. The magnetic levitation assembly includes first track segments including first rails disposed within the transfer region and below the process region, each of the first rails including a first plurality of magnets. The process station further includes a pedestal assembly including a pedestal disposed within the housing. The pedestal is movable between a pedestal transfer position and a process position, where the pedestal is disposed between the first rails to receive a substrate from a substrate carrier, and where the pedestal is movable between the first rails to position the received substrate within the process region.

The present disclosure relates to a method of selectively forming silicides in high aspect ratio structures by using a multi-step deposition process. A first precursor gas is delivered to a surface disposed within a processing region of a process chamber maintained at a first process pressure, wherein the substrate is maintained at a first temperature for a first period of time. The purge gas is delivered for a second period of time after the first period of time has elapsed. A second precursor gas is delivered to the surface of the substrate. The second precursor is maintained at a second process pressure while the substrate is maintained at a second temperature for a third period of time. After the third period of time has elapsed, the purge gas is delivered to the treatment zone for a fourth period of time.

The present invention relates to a substrate processing apparatus and a multi-component thin film deposition method using same. The substrate processing apparatus according to an embodiment of the present invention comprises a plurality of process regions divided by a plurality of separation regions. At least two of the plurality of process regions are controlled to selectively spray two different process gases. Accordingly, thin films produced through a unit cycle circulating once through the plurality of process regions are formed to include atoms constituting the two different process gases, respectively, thereby forming a multi-component thin film.

An exemplary substrate processing system may include a cover plate. The system may include a plurality of processing zones. The system may include at least one shunt. Each diverter may include a top surface and a side surface. Each diverter may define an inlet and a plurality of outlets. Each inlet and outlet may extend through the side surface. Each diverter may define an inlet cavity extending from the fluid inlet to the hub. Each diverter may define a plurality of outlet cavities, each outlet cavity extending from the hub to one of the outlets. Each of the outlet cavities may have the same length. The system may include a plurality of output manifolds. Each of the output manifolds may be coupled with a respective processing region. The system may include a plurality of valves. At least one valve may be coupled between each outlet and the output manifold.

A substrate process station includes a housing including a transport region and process region. The process station further includes a magnetic levitation assembly disposed in the transport region configured to levitate and propel a substrate carrier. The magnetic levitation assembly includes a first track segment including first rails disposed in the transport region and below the process region, wherein the first rails each include a first plurality of magnets. The process station further includes a pedestal assembly comprising a pedestal disposed within the housing. The pedestal is moveable between a pedestal transfer position and a process position, wherein the pedestal is disposed between the first rails in the pedestal transfer position to receive a substrate from the substrate carrier, and wherein the pedestal is moveable between the first rails to position the received substrate in the process region in the process position.

A mask according to the present invention includes a mask body and sheet-like ear hook parts joined to each horizontal-direction edge of the mask body in a joining processing region extending along the vertical direction. The joining processing region has a plurality of modified portions that are spaced apart from each other and modified by melting, and the area ratio of the modified portions in a central joining processing region located in the center in the vertical direction of the joining processing region is smaller than the area ratio of the modified portions in end joining processing regions located at the ends in the vertical direction of the joining processing region.

A substrate process station includes a housing including a transport region and process region. The process station further includes a magnetic levitation assembly disposed in the transport region configured to levitate and propel a substrate carrier. The magnetic levitation assembly includes a first track segment including first rails disposed in the transport region and below the process region, wherein the first rails each include a first plurality of magnets. The process station further includes a pedestal assembly comprising a pedestal disposed within the housing. The pedestal is moveable between a pedestal transfer position and a process position, wherein the pedestal is disposed between the first rails in the pedestal transfer position to receive a substrate from the substrate carrier, and wherein the pedestal is moveable between the first rails to position the received substrate in the process region in the process position.

A consumable part and methods for tracking the consumable part includes embedding a radio frequency tag within a pocket created on a side of the consumable part that faces away from a process region defined within a process chamber of the processing tool and covering an opening of the pocket using a plug. The plug is laser fused along an interface formed between sidewalls of the plug and sidewalls of the pocket.

Pump liners and process chambers with the pump liners are described. The pump liner has a ring-shaped body with an annular wall enclosing a process region. A plurality of circumferentially spaced openings provide fluid communication through the annular wall between the process region and a region outside of the ring-shaped body. Each of the plurality of circumferentially spaced openings has a self-adjusting valve assembly. Self-adjusting valves and processing methods are also described.