11 results about "Process region" patented technology

A substrate process station includes a housing including a transport region and process region. The process station further includes a magnetic levitation assembly disposed in the transport region configured to levitate and propel a substrate carrier. The magnetic levitation assembly includes a first track segment including first rails disposed in the transport region and below the process region, wherein the first rails each include a first plurality of magnets. The process station further includes a pedestal assembly comprising a pedestal disposed within the housing. The pedestal is moveable between a pedestal transfer position and a process position, wherein the pedestal is disposed between the first rails in the pedestal transfer position to receive a substrate from the substrate carrier, and wherein the pedestal is moveable between the first rails to position the received substrate in the process region in the process position.

Semiconductor manufacturing processing chambers with recycling capability and methods of recycling a chemical precursor are described. The processing chamber comprises a chamber body with a substrate support. The substrate support is spaced from the chamber lid to create a process region. A gas inlet provides a flow of gas to the process region and a recirculation housing comprising a first recirculation volume and a second recirculation volume is in fluid communication with the process region. At least one first exhaust valve is connected to the first recirculation plenum through a first recirculation inlet line and at least one second exhaust valve is connected to the second recirculation plenum through the second recirculation inlet line. An actuator moves a movable wall within the recirculation housing to change the volume of the first recirculation volume and the second recirculation volume.

The application provides a wafer appearance detection method based on process regions, comprising the following steps: obtaining a standard wafer on a wafer and performing process-based region slicing on the standard wafer; aligning a to-be-detected wafer on the wafer by selecting feature points of the standard wafer; extracting corresponding process regions of the to-be-detected wafer based on different process regions of the standard wafer; and performing defect detection on different process regions of the to-be-detected wafer by using corresponding process detection methods. The application extracts the to-be-detected wafer based on different processes, and uses different detection methods to perform defect detection on different process regions, thereby improving the detection accuracy and efficiency. Meanwhile, the same standard wafer is used as a comparison standard for all to-be-detected wafers, thereby improving the detection robustness.

The invention relates to a method and a device for producing micro parts and micro components by means of additive manufacturing using micro laser sintering. A pulverulent agglomerating material (1) is applied in layers from a first powder reservoir (2), and the material is melted using laser light (4) after being applied. The invention is characterized in that the material (1) located in the first powder reservoir (2), which is open in the direction of a processing plane, is an agglomerating powder, the particle size (1) of which equals maximally 20 μm, and a force (F1) is applied to the agglomerating material (1) in the direction of a substrate (3) in a process region (100) at least during the application process, the agglomerating material (1) behaving as a fluid while being applied as a result of said force. For this purpose, the device has a horizontally aligned base (5) which is interrupted at least in some regions in a process region (100) above a substrate (3) and has a first powder reservoir (2) which is arranged above the base (5) in a horizontally movable manner over the base (5) and which comprises an interior for receiving a pulverulent agglomerating material (1), the particle size (1) of which equals maximally 20 μm, wherein the first powder reservoir (2) has a first means (6) in the interior thereof for applying a first axial force (F1), which acts in the direction of the base (5) and the substrate (3), to the pulverulent agglomerating material (1) located in the interior, the agglomerating material (1) behaving as a fluid in the process region (100) at least while being applied as a result of said force.

Semiconductor manufacturing processing chambers with recycling capability and methods of recycling a chemical precursor are described. The processing chamber comprises a chamber body with a substrate support. The substrate support is spaced from the chamber lid to create a process region. A gas inlet provides a flow of gas to the process region and a recirculation housing comprising a first recirculation volume and a second recirculation volume is in fluid communication with the process region. At least one first exhaust valve is connected to the first recirculation plenum through a first recirculation inlet line and at least one second exhaust valve is connected to the second recirculation plenum through the second recirculation inlet line. An actuator moves a movable wall within the recirculation housing to change the volume of the first recirculation volume and the second recirculation volume.

The present invention relates to a substrate processing apparatus including a process chamber, a substrate support structure, and a gas injection structure. The process chamber can include a plurality of process regions for processing a plurality of substrates. The substrate support structure is disposed in the process chamber and supports a plurality of spaced substrates at a predetermined spacing, with one substrate for each of the plurality of process regions, and is rotatable to sequentially pass the plurality of substrates through the plurality of process regions. The gas injection structure is disposed above the process chamber to face the substrate support structure. The gas injection structure can include a plurality of process gas injection portions, one for each of the plurality of process regions, to inject process gas toward the facing substrate, and a plurality of purge gas injection portions disposed to surround the process gas injection portions for each of the plurality of process regions and to inject purge gas toward the substrate support structure.

A substrate process station includes a housing including a transport region and process region. The process station further includes a magnetic levitation assembly disposed in the transport region configured to levitate and propel a substrate carrier. The magnetic levitation assembly includes a first track segment including first rails disposed in the transport region and below the process region, wherein the first rails each include a first plurality of magnets. The process station further includes a pedestal assembly comprising a pedestal disposed within the housing. The pedestal is moveable between a pedestal transfer position and a process position, wherein the pedestal is disposed between the first rails in the pedestal transfer position to receive a substrate from the substrate carrier, and wherein the pedestal is moveable between the first rails to position the received substrate in the process region in the process position.

The present invention relates to a substrate processing apparatus and a multi-component thin film deposition method using same. The substrate processing apparatus according to an embodiment of the present invention comprises a plurality of process regions divided by a plurality of separation regions. At least two of the plurality of process regions are controlled to selectively spray two different process gases. Accordingly, thin films produced through a unit cycle circulating once through the plurality of process regions are formed to include atoms constituting the two different process gases, respectively, thereby forming a multi-component thin film.

A substrate process station includes a housing including a transport region and process region. The process station further includes a magnetic levitation assembly disposed in the transport region configured to levitate and propel a substrate carrier. The magnetic levitation assembly includes a first track segment including first rails disposed in the transport region and below the process region, wherein the first rails each include a first plurality of magnets. The process station further includes a pedestal assembly comprising a pedestal disposed within the housing. The pedestal is moveable between a pedestal transfer position and a process position, wherein the pedestal is disposed between the first rails in the pedestal transfer position to receive a substrate from the substrate carrier, and wherein the pedestal is moveable between the first rails to position the received substrate in the process region in the process position.

A substrate process station includes a housing including a transport region and process region. The process station further includes a magnetic levitation assembly disposed in the transport region configured to levitate and propel a substrate carrier. The magnetic levitation assembly includes a first track segment including first rails disposed in the transport region and below the process region, wherein the first rails each include a first plurality of magnets. The process station further includes a pedestal assembly comprising a pedestal disposed within the housing. The pedestal is moveable between a pedestal transfer position and a process position, wherein the pedestal is disposed between the first rails in the pedestal transfer position to receive a substrate from the substrate carrier, and wherein the pedestal is moveable between the first rails to position the received substrate in the process region in the process position.

Pump liners and process chambers with the pump liners are described. The pump liner has a ring-shaped body with an annular wall enclosing a process region. A plurality of circumferentially spaced openings provide fluid communication through the annular wall between the process region and a region outside of the ring-shaped body. Each of the plurality of circumferentially spaced openings has a self-adjusting valve assembly. Self-adjusting valves and processing methods are also described.