Apparatus and method for selective oxidation at lower temperature using remote plasma source

Abstract

Devices and methods for selectively oxidizing silicon are described herein. An apparatus for selective oxidation of exposed silicon surfaces includes a thermal processing chamber with a plurality of walls, first inlet connection and a second inlet connection, wherein the walls define a processing region within the processing chamber, a substrate support within the processing chamber, a hydrogen source connected with the first inlet connection, a heat source connected with the hydrogen source, and a remote plasma source connected with the second inlet connection and an oxygen source. A method for selective oxidation of non-metal surfaces, can include positioning a substrate in a processing chamber at a temperature less than 800° C., flowing hydrogen into the processing chamber, generating a remote plasma comprising oxygen, mixing the remote plasma with the hydrogen gas in the processing chamber to create an activated processing gas, and exposing the substrate to the activated gas.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims benefit of U.S. Provisional Patent Application Ser. No. 61 / 678,452 (APPM / 16996L), filed Aug. 1, 2012, which is herein incorporated by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]Embodiments of the present invention generally relate to apparatus and methods for selectively oxidizing silicon.[0004]2. Description of the Related Art[0005]Oxidation of silicon is a fundamental technology to CMOS fabrication, dating back to the inception of the integrated circuit. The most common methods for oxidation of silicon rely on thermal processes in ambient of O2, H2O / H2, H2O / O2, O2 / H2 or combinations thereof. The hardware used to provide the silicon oxidation process in the IC manufacturing are batch thermal furnaces and RTP. In conventional oxidation systems and processes, high temperature (above 700° C.) is required to provide the activation energy for the oxide growth on silicon or poly-silicon.[0...

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Benefits of technology

[0009]In another embodiment, a method for selective oxidation of non-metal surfaces, can include positioning a substrate in a processing chamber, wherein the processing chamber is maintained at a temperature less than 800° C., flowing hydrogen into the processing chamber, generating a remote plasma comprising oxygen, flowing the remote plasma into the processing chamber, wherein the remote plasma mixes with the hydrogen gas to create an activated processing gas, and exposing the substrate to the activated gas.

[0010]In another embodiment, a method for selective oxidation of non-metal surfaces can include positioning a substrate in a processing chamber, wherein the processing chamber is maintained at a temperature less than 800° C., flowing hydrogen in proximity to a hot wire apparatus to generate activated hydrogen, flowing the activated hydrogen into the processing chamber, generating a remote plasma comprising oxygen, mixing the remote plasma with the hydrogen gas in the processing chamber to create an activated processing gas, exposing the substrate to the activated gas to oxidize a desired amount of silicon, wherein the activated gas oxidizes silicon surfaces and reduces metal surfaces, and cooling the substrate.

Problems solved by technology

However, many of the next generation devices will undergo serious damage at the point in the process flow where the oxide growth is required, if exposed to the combination of high temperature and an oxidizing environment.

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