The invention provides a method for extracting NBIT
activation energy from a single PMOSFET (P-channel
Metal Oxide Semiconductor Field Effect Transistor), which comprises the following steps of: respectively applying NBIT stress under
constant voltage to the PMOSFET at different temperatures according to a
stress time sequence, monitoring a change dynamic state of a transfer characteristic curve-along with the
time sequence at different temperatures, respectively
threshold voltage from the transfer characteristic curve-, obtaining a
delta degradation dynamic state in a temperature rise process, and extracting the NBIT
activation energy from the single PMOSFET. The
stress time for generating the
delta degradation dynamic state at other temperatures except the initial temperature is converted into the
equivalent stress time for generating the
delta degradation dynamic state at the initial temperature, and the multiple
equivalent stress times are added to obtain the relation of delta-accumulated
equivalent stress time; the value enabling the delta-accumulated equivalent
stress time to fall on the extension line of the equivalent stress time of the delta-initial temperature is calculated, and a single PMOSFET is used for testing, so that the influence of the consistency difference among a plurality of devices on the
activation energy can be avoided, and the result is accurate; and meanwhile, all degradation data are obtained on a single PMOSFET sample, so that the test time is short, and the extraction efficiency of NBIT activation energy and the
utilization rate of the sample are improved.