1019 results about "Germanium" patented technology

The invention belongs to the technical field of semiconductors, and discloses a method for manufacturing a sigma trench in a semiconductor device, which comprises the following steps of: providing a substrate which comprises a first device region and a second device region; a PMOS (P-channel Metal Oxide Semiconductor) region gate and a PMOS gate mask layer are formed on the first active region of the first device region; exposing the top of the PMOS gate mask layer outside the first device region photoresist layer; depositing a deposition silicon oxide layer on the top of the second device region and the top of the PMOS gate mask layer; removing the photoresist layer in the first device region; etching to remove the natural silicon oxide layer on the surface of the first active region, further etching silicon in the first active region, and forming a U-shaped groove in the semiconductor substrate in the first device region; and carrying out TMAH etching on the U-shaped groove to form a sigma groove. According to the invention, in the process of embedding germanium-silicon into the source and the drain, the height difference between the PMOS and the NMOS is avoided, and the subsequent process is not influenced.

The method comprises the following steps: weighing an oxide precursor of metal indium, an oxide precursor of metal M, an ammonium salt and a lithium salt according to a chemical formula of indium-based halide, fully mixing, and calcining in an inert atmosphere to obtain the indium-based halide solid electrolyte. Forming an indium-based halide solid electrolyte through a solid-phase reaction; wherein M is selected from at least one of magnesium, calcium, strontium, barium, aluminum, gallium, indium, bismuth, scandium, yttrium, zinc, germanium, tin, lanthanum, cerium, samarium, gadolinium, holmium, erbium and ytterbium. The method can greatly simplify the synthesis process, reduce the raw material cost and realize industrial batch preparation.

The invention provides a heterojunction quantum well and a preparation method thereof, and the method comprises the steps: providing a substrate, and forming a heterojunction quantum well at one side of the substrate through a chemical vapor deposition method; the heterojunction quantum well comprises a first barrier layer, a quantum well layer and a second barrier layer which are stacked in sequence, the first barrier layer is located between the quantum well layer and the substrate, the first barrier layer and the second barrier layer are both made of germanium-silicon, when the heterojunction quantum well is a silicon heterojunction quantum well, the quantum well layer is a silicon quantum well layer, and when the heterojunction quantum well is a silicon quantum well layer, the second barrier layer is a silicon quantum well layer. When the heterojunction quantum well is a germanium heterojunction quantum well, the quantum well layer is a germanium quantum well layer; in the process of forming the heterojunction quantum well, the precursor is decomposed in a target temperature range, and a product obtained through decomposition is deposited on one side of the substrate to obtain the heterojunction quantum well; the precursor is subjected to multi-stage reaction during decomposition, and the target temperature range is 300-550 DEG C; the interface quality of the heterojunction quantum well can be greatly improved, the surface roughness of the film layer can be reduced, and high-quality preparation of the heterojunction quantum well is realized.

The invention relates to a dual-waveband medium-long wave infrared optical filter based on a germanium / zinc sulfide asymmetric film system and a preparation method of the dual-waveband medium-long wave infrared optical filter. The dual-waveband medium-long wave infrared optical filter comprises a front film system, a substrate and a back film system, the front film system and the back film system are formed by alternately overlapping germanium layers and zinc sulfide film layers; the average transmittance of the infrared optical filter in the wave band of 3800 nm to 4800 nm and the wave band of 8000 nm to 10000 nm is not lower than 91%. According to the two-waveband medium-long wave infrared optical filter disclosed by the invention, 3800 to 4800 nm amp is realized; according to the infrared filtering window, the light energy of medium waves and long waves of 8000-10000 nm is improved, the luminous flux of other wavebands is well inhibited, the technical problem of the infrared filtering window in some special infrared spectrum detection systems is solved, and a new scheme is provided for infrared application.

In some embodiments, the present disclosure relates to a single-photon avalanche detector (SPAD) device including a silicon substrate including a recess in an upper surface of the silicon substrate. A p-type region is arranged in the silicon substrate below a lower surface of the recess. An n-type avalanche region is arranged in the silicon substrate below the p-type region and meets the p-type region at a p-n junction. A germanium region is disposed within the recess over the p-n junction.

The invention relates to the field of semiconductor single crystal material preparation processes, and discloses a process method for synergistically recovering indium and germanium from zinc leaching residues and preparing single crystals, which comprises the following steps: mixing a crude extract and a liquid metal solvent, carrying out low-temperature extraction to obtain mixed slurry, carrying out thermal-phase in-situ purification on the mixed slurry, separating a liquid-solid phase by utilizing thermal gradient migration, and carrying out solid-liquid separation on the separated liquid-solid phase. Performing directional solidification and purification to obtain an ultra-clean growth solution; analyzing the indium-germanium proportion of the ultra-clean growth solution, and supplementing pure metal for chemical component calibration; the ultra-clean growth solution with accurate components is used for liquid phase epitaxial growth to obtain single crystals, the thermodynamic principle is used for replacing physical filtration, so that particle heterogeneous nucleation centers are removed, the influence of chemical fluctuation of raw materials is eliminated through a built-in calibration link, and the physically pure growth solution with accurate components is prepared; the industrial preparation of the high-quality single crystal is ensured.

The invention relates to a wide-temperature-range stable dual-band infrared optical filter for an extreme environment and a preparation method thereof. The wide-temperature-range stable dual-band infrared optical filter comprises a front film system, a substrate and a back film system, the front film system and the back film system are formed by alternately overlapping germanium layers and zinc sulfide film layers; the drift distance of the central wavelength of the passband of the infrared optical filter is less than 0.05% within the temperature range of-120 DEG C to + 85 DEG C. According to the invention, the internal stress of the film layer is obviously reduced through the optimized film system design, so that the excellent stability of the optical performance in an extreme temperature environment is realized, the technical problem that some special infrared spectrum detection systems work in a wide temperature range is solved, and a reliable solution is provided for high-end aerospace infrared application.

The invention provides a 3C-SiC wafer and a preparation method and application thereof. The preparation method comprises the following steps: etching and carbonizing a silicon substrate in sequence; and growing a silicon-germanium buffer layer on the surface of the silicon substrate after carbonization treatment, sequentially growing a 3C-SiC buffer layer and a polycrystalline 3C-SiC layer, finally removing the silicon substrate and the silicon-germanium buffer layer, and performing post-treatment to obtain the 3C-SiC wafer. According to the preparation method, the process window is wide, the yield is stable, the growth rate is high, the crystal quality of the obtained 3C-SiC wafer is high, the service life of a device is prolonged, and the utilization rate of the wafer is improved.

The invention relates to the technical field of photoelectric detection, in particular to a global self-defined sampling method based on a germanium-silicon photoelectric detector array, which comprises the following steps of: S1, constructing the germanium-silicon photoelectric detector array with an n * t specification, receiving a target optical signal by using each detector unit as a pixel point, converting the target optical signal into an initial current signal, the signal is linearly amplified into a voltage signal through an external transimpedance amplifier; s2, digitalizing the voltage signal into a binary discrete digital signal through a high-speed analog-to-digital converter at the output end of the trans-impedance amplifier; and S3, performing global synchronous sampling to obtain a first group of data, performing repeated sampling in the same mode to obtain multiple groups of data, performing pixel-by-pixel superposition to generate fused data, and performing user-defined setting on the repeated sampling frequency within 1-1024 times. By customizing the number of repeated sampling times and data superposition, adapting to different light intensities and expanding the detection dynamic range, the problems of strong light overexposure and weak light underexposure are solved, the data consistency is guaranteed in combination with global synchronous sampling, and the detection precision and the environmental adaptability are improved.

The invention relates to an MEMS-CMOS device vertical interconnection integrated packaging preparation method, which comprises the following steps of: processing a TSV (Through Silicon Via) on a first silicon wafer (3), and filling crystalline silicon (2a); respectively processing a CMOS circuit layer and an RDL layer on the first silicon wafer, and processing a germanium bonding point (8) on the other surface of the first silicon wafer; a second SOI silicon wafer (10) and a third SOI silicon wafer (11) are fused and bonded to form a cavity (9), an aluminum / titanium / aluminum bonding point (12) is prepared on the third silicon wafer, an MEMS movable microstructure (13) is prepared on the third silicon wafer, the metal aluminum / titanium / aluminum bonding point and the MEMS movable microstructure are electrically connected, and the aluminum-germanium bonding point of the first silicon wafer and the aluminum-germanium bonding point of the third silicon wafer are subjected to eutectic bonding. According to the invention, the size of an integrated packaging chip of the MEMS device and the CMOS processing circuit is greatly reduced, and meanwhile, the RDL structure can realize wafer-level bonding packaging without considering the types, layout and size of the MEMS device and the CMOS circuit.

The invention relates to the technical field of preparation of organic photoelectric materials, in particular to a boron-nitrogen compound and an organic electroluminescent device comprising the same. The boron-nitrogen compound disclosed by the invention has good electron and hole receiving capability, and interaction among luminescent molecules can be effectively inhibited by introducing large-steric-hindrance azafluorene / benzfluorene / azabenzfluorene / silafluorene / germanium heterofluorene and other groups. The energy transmission performance between a subject and an object or a sensitizer can be improved by a large conjugated spiro structure unit, an sp2 aza-aromatic ring and other structures. Specifically, the boron-nitrogen compound provided by the invention is used as a functional layer, especially as an organic electroluminescent device manufactured by a luminescent layer, the current efficiency is improved, the lighting voltage is reduced, and meanwhile, the service life of the device is greatly prolonged. Therefore, after most electrons and holes are compounded, energy is effectively transferred to the boron-nitrogen compound, so that high luminous efficiency is realized.

The disclosure discloses a memory cell structure, a semiconductor memory device, and methods of manufacturing the same. In one embodiment, a semiconductor device includes: a lower interconnect extending in a first horizontal direction; an upper interconnect extending in a second horizontal direction perpendicular to the first horizontal direction; and a memory cell structure arranged in a columnar shape between the lower interconnect and the upper interconnect, wherein the memory cell structure includes: a selection element layer; a memory element layer; and an intermediate electrode disposed between the selection element layer and the storage element layer, the selection element layer including: at least one of silicon oxide, silicon nitride, or silicon oxynitride; the first dopant comprises at least one of boron, aluminum, gallium, indium or thallium; and the second dopant includes at least one of arsenic, phosphorus, or germanium.

The invention discloses a germanium wafer chamfering method based on diameter optimization and double-grinding-wheel step-by-step grinding, and belongs to the technical field of semiconductor material machining. The method comprises the steps that in the slicing process, the diameter of a incoming germanium wafer is machined to be 1200-1300 microns larger than the diameter of a preset finished product, and sufficient chamfering machining allowance is provided; then, a step-by-step chamfering process is adopted, firstly, a metal bond grinding wheel with the abrasive particle size of 1000 meshes to 1500 meshes is used, and under the rotating speed of 2000 rpm to 4000 rpm and the feeding speed of 8 microns / s to 10 microns / s, rough chamfering machining is conducted for 3 times to 4 times at the single-time feeding amount of 300 microns to 400 microns, and then rough chamfering machining is conducted for 3 times to 4 times at the rotating speed of 2000 rpm to 4000 rpm and the feeding speed of 8 microns / s to 10 microns; and then switching to a resin binder grinding wheel with the abrasive particle size of 2000 meshes to 4000 meshes, and performing fine chamfering processing for 3 to 5 times at the rotating speed of 3000 rpm to 3500 rpm and the feeding speed of 5 mu m / s to 6 mu m / s at the single feeding amount of 10 mu m to 50 mu m. The problems that in a traditional method, the chamfering amount is insufficient, the machining efficiency and the surface quality cannot be considered at the same time, and the adaptability to large-diameter germanium wafers is poor are solved, and the comprehensive qualification rate of the wafers is increased.

A film stack is formed a workpiece. The film stack is fabricated by sequentially depositing a carbon-doped silicon germanium stack and a silicon film to form a carbon-doped silicon-germanium and silicon mini-stack disposed on a substrate during a deposition cycle. The deposition cycle comprises exposing a workpiece including the substrate to a first gas including a first precursor to deposit a first silicon-germanium layer and exposing the workpiece to a second gas including the first precursor to deposit a carbon-silicon-germanium layer on the first silicon-germanium layer. Further, the deposition cycle includes exposing the workpiece to a third gas including the first precursor to deposit a second silicon-germanium layer on the carbon-silicon-germanium layer. The deposition cycle further includes exposing the workpiece to a fourth gas including a second precursor to deposit the silicon film on the second silicon-germanium layer. The second precursor differs from the first precursor.

Exemplary secondary particles may include a porous polymer matrix comprising polyacrylonitrile (PAN) and polypyrrole (PPy), and a plurality of submicron-sized primary particles dispersed in the porous polymer matrix. The plurality of submicron-sized primary particles may comprise at least one of: carbon (C), silicon (Si), germanium (Ge), tin (Sn), or an alloy of a Group IVA element.

The invention relates to a large-size wide-spectrum infrared color separation film with controllable surface precision and a manufacturing method thereof, the color separation film takes a silicon plain film as a substrate, a color separation film is designed on a light incident surface of the silicon substrate, germanium and zinc sulfide are used as high and low refractive index materials of a reflecting film stack, ytterbium fluoride is added in a matching layer, the film thickness ratio is regulated and controlled, and a thin film deposition process is optimized. The surface type change caused by the film layer is reduced; a thickness compensation film layer is added when the antireflection film is designed on the light transmission surface of the silicon substrate, so that the stress of the antireflection film and the stress of the color separation film are mutually counteracted, and the surface type is controlled. Appropriate substrate temperature, deposition rate and local film layer ion auxiliary deposition are adopted in the preparation of the color separation film, and the environmental reliability is good. The prepared large-size color separation sheet is controllable in surface type, the surface type precision RMS of the color separation surface is 0.028 lambda, the surface type precision RMS of the anti-reflection surface is 0.042 lambda, the large-size color separation sheet can highly reflect a broadband of 2-3.95 microns and highly transmit a broadband of 4.2-5.1 microns, and the large-size color separation sheet can be used for spectrum color separation of a large-view-field infrared optical system.

The invention provides a metal-doped biomass carbon negative electrode material and a preparation method thereof.The preparation method comprises the steps that an acid activating agent is added into biomass powder for soaking, then a pore inducer is added for high-temperature activating treatment, and activated porous carbon is obtained; preparing a mixed metal salt solution, adding the activated porous carbon into the mixed metal salt solution, sequentially stirring and standing, and performing suction filtration and drying to obtain an intermediate; and putting the intermediate into a vapor deposition reaction cavity, heating under the protection of nitrogen, introducing a silicon source gas and a germanium source gas for a deposition reaction, and cooling after the deposition reaction is completed to obtain the metal-doped biomass carbon negative electrode material. According to the process, through collaborative integration of structural design and element functions, the comprehensive electrochemical performance of the metal-doped biomass carbon negative electrode material is remarkably improved, and the problem that a traditional doped material is insufficient in stability and capacity utilization rate is solved.

The invention discloses a method for testing trajectory transport parameters of a pulse-excited transistor at an ultralow temperature, and belongs to the field of semiconductor device characterization. According to the method, the self-heating effect intensity of a device is actively controlled by adjusting the pulse time at the environment temperature lower than 10K, and the source-drain saturation current of the transistor in different self-heating states is measured; the true temperature of the channel is inverted by using source-drain saturation current in different self-heating states; and calculating the back scattering probability and the ballistic transport efficiency by researching the dependency relationship between the changes of the threshold voltage and the source-drain saturation current and the channel temperature. According to the method, parameter extraction errors caused by inconsistency of the environment temperature and the channel temperature in a traditional method are solved, the intrinsic ballistic transport efficiency parameters of the device can be accurately obtained, and the method is suitable for high-performance planar transistors with silicon, germanium and III-V group compounds as carrier channels, fin type three-dimensional grids and transistors with ring gate-nanowire structures.

A molybdenum silicide layer is formed on a bottom surface in a recessed feature in a silicon or silicon-germanium substrate. The bottom surface may be a silicon or silicon-germanium. A first molybdenum lay er may be deposited on or over the molybdenum silicide layer to fill the recessed feature. In some cases, a second molybdenum layer may be formed on the molybdenum silicide layer. In some cases, the second molybdenum layer may be exposed to nitrogen radicals or nitrogen-containing radicals, forming a molybdenum nitride layer on the second molybdenum layer.

The invention relates to the technical field of photocatalytic materials, in particular to a multi-ion doped TiO2 nanosheet material suitable for degradation of dyes in water and a preparation method of the multi-ion doped TiO2 nanosheet material. The preparation method comprises the following steps: pre-embedding a self-sacrifice template in a germanium-tungsten composite doping solution, carrying out hydrothermal conversion to construct a Ge-W synergetic optimized regular TiO2 substrate, carrying out atomic layer deposition to realize nitrogen / silver uniform doping, and carrying out synergetic surface modification on silver nitrate-ethanolamine and perfluorosilane to prepare the TiO2 nanosheet material. Germanate serves as lattice strain guidance to guide TiO2 lattice growth to form a low-defect matrix, tungstate is cooperatively doped in the matrix to construct a strong built-in electric field to improve the charge separation efficiency, Ge-W elements cooperate to stabilize a bulk phase and a grain boundary, and a gradient protection barrier is constructed with selective shielding of a fluorosilane layer. The TiO2 catalyst is synergistically improved in the aspects of high catalytic activity and long-acting environmental stability, and is suitable for efficient pollutant purification in a complex water quality environment.

This application relates to a semiconductor structure and a method for manufacturing the same. The manufacturing method includes: providing a substrate, including a first region and a second region; forming at least two first gate structures in the first region and a second gate structure in the second region; simultaneously forming first sidewalls on the sidewalls of the first gate structures and second sidewalls on the sidewalls of the second gate structures; forming a hard mask layer; the hard mask layer covers the second sidewalls, the second gate structures, and the substrate of the second region, and at least exposes the substrate between adjacent first sidewalls; etching the substrate between adjacent first gate structures in the first region based on the hard mask layer to form sigma trenches between adjacent first gate structures; forming a silicon-germanium layer within the sigma trenches; and chemically etching to remove the hard mask layer. This application is advantageous in improving the consistency of sidewall thickness between different device regions and effectively avoiding hard mask material residue problems, thereby effectively improving device yield.

A comprehensive utilization method of beneficiation-metallurgy-chemical combination for germanium-rich lignite includes the following steps: 1) germanium-rich lignite sizing and grinding, 2) catalytic pre-oxidation, 3) nitric acid leaching, and 4) recycling and enrichment of germanium solution. The high effective extraction of germanium from the germanium-rich lignite was achieved via a combination of mineral beneficiation, hydrometallurgy, and chemical processing. Meanwhile, a high yield and high degree of depolymerization humic acid product was produced as byproducts. This method could not only effectively avoid high carbon emission and organic resource waste during conventional germanium-rich lignite pyrometallurgical processing, but also could produce humic acid as quality raw materials for metallurgical and agricultural industries, which has advantages of less environmental pollution, high extraction efficiency, and low comprehensive costs.

A fabrication method, includes: forming a gate spacer layer around a sacrificial gate structure disposed over a substrate; performing, on a first material layer that includes the gate spacer layer, treatment operations that are configured to make the first material layer more resistant to Germanium (Ge) diffusion during metal gate replacement operations; forming a second material layer adjacent to the first material layer; and replacing the sacrificial gate structure with a metal gate, wherein the first material layer blocks Ge from entering the metal gate.

This invention relates to a method for remote epitaxial growth of single-crystal lead-free perovskite microsheets on germanium, comprising the following steps: using CsBr and SnBr2 as source materials placed in a reaction region, using argon as a carrier gas, placing germanium-based graphene in a deposition region, and then heating to react the source materials, followed by evaporation and deposition onto the germanium-based graphene to form single-crystal lead-free perovskite microsheets. The method of this invention can obtain perovskite microsheets with good orientation and is environmentally friendly. Furthermore, germanium is a mature semiconductor material with well-established wafer fabrication, cleaning, and surface treatment processes, making large-scale production possible and providing a new path for perovskite to move from the laboratory to high-performance, multifunctional integrated optoelectronic devices.

The invention relates to the technical field of photovoltaic cells and materials thereof, and discloses a crystalline silicon wafer for preparing a crystalline silicon photovoltaic cell, a silicon ingot and a laminated photovoltaic cell. The crystal silicon wafer has one of the following characteristics: 1) the crystal silicon wafer is a lithium crystal silicon wafer of lithium-doped silicon; and 2) the crystal silicon wafer is an alloy crystal silicon wafer, the alloy crystal silicon wafer comprises a substrate, an alloy area containing silicon, tin and germanium alloy elements is locally prepared on the substrate, the alloy crystal silicon wafer is formed, and the alloy area of the alloy crystal silicon wafer comprises the following alloy elements in percentage by atomic number: 5-53% of silicon, 2-12% of tin and the balance of germanium. Compared with the prior art, the current output potential is improved, the photoelectric conversion efficiency is improved, lithium in the lithium crystal silicon wafer effectively passivates defects in crystalline silicon, the minority carrier lifetime of the crystalline silicon is prolonged, the mobility of the crystalline silicon is improved, a better lithium interface passivation effect is achieved, and the function of resisting the ultraviolet induced degradation effect is achieved.

A semiconductor memory device includes: a stacked body including conductive and insulating layers that are alternately stacked in a first direction; memory pillars extending in the first direction in the stacked body; and a structure body segmenting the memory pillars and extending in the first direction in the stacked body. The structure body includes a crystalline conductor extending in the first direction in the stacked body, a first insulating film between the stacked body and the crystalline conductor, a crystalline semiconductor film between the crystalline conductor and the first insulating film, and a second insulating film between the crystalline semiconductor film and a side surface of the crystalline conductor. The crystalline conductor includes a first crystal region in contact with the crystalline semiconductor film and containing germanium, and a second crystal region on the first crystal region and in contact with the second insulating film in a second direction.

The invention discloses a method for efficiently leaching and extracting germanium from germanium-containing zinc oxide smoke dust based on ultrasonic strengthening, and relates to the technical field of metal metallurgy, the method comprises the specific steps of raw material pretreatment, ultrasonic-assisted leaching, solid-liquid separation and zinc powder replacement germanium precipitation, germanium-enriched slag strengthened leaching and germanium enrichment and purification; according to the method, the ultrasonic leaching device is introduced, the leaching efficiency of germanium in the germanium-containing zinc oxide smoke dust is improved, passive films on the surfaces of smoke dust particles are effectively damaged through the action of the ultrasonic leaching device, permeation of a leaching agent into the particles is accelerated, and therefore efficient leaching of germanium is achieved within a short time, and meanwhile the leaching efficiency of germanium in the germanium-containing zinc oxide smoke dust is improved. According to the method, the leaching rate of germanium is increased by optimizing the proportion and leaching conditions of the mixed leaching agent, the germanium slag leaching solution is merged into the initial leaching solution, and a secondary enhanced leaching process of a subsequent zinc powder replacement germanium precipitation procedure is carried out, so that the maximum recovery of germanium resources is ensured, the overall resource utilization rate is increased, and the production cost is reduced.

The utility model discloses a kind of high-purity germanium detector vacuum life measuring device, including vacuum generation module and detection component, detection component is by first detection module and second detection module intercommunication composition, vacuum generation module and detection component intercommunication;First detection module includes first vacuum angle valve, vacuum leak and release gas test chamber and first vacuum gauge;Second detection module includes second vacuum angle valve, getter test chamber, getter sample chamber, second vacuum gauge, fine adjustment valve and high-purity test gas tank;The high-purity germanium detector vacuum life measuring device of this is vacuumized to detection component by vacuum generation module, subsequently detects the leak and release gas amount of high-purity germanium detector by first detection module, and then detects the getter gas suction capacity by second detection module, i. e. The vacuum life of high-purity germanium detector can be detected and calculated;The device can effectively detect the vacuum performance of high-purity germanium detector, provide support for the maintenance of high-purity germanium detector, ensure its detection accuracy.

The invention discloses a 3D stacked silicon-based germanium detector, relates to the field of short-wave infrared light detection and imaging, and solves the technical problem that an existing silicon-based germanium photoelectric detector is low in spectral responsivity. The detector is formed by a first wafer and a second wafer in an inverted bonding mode, an MOSFET structure is arranged in the first wafer, a Ge-on-Si photodiode structure is arranged in the second wafer and used for receiving external light and generating electrons and holes, and the electrons and the holes are accumulated in a substrate of the MOSFET structure to change the potential of the substrate so as to increase output current. The gain, the responsivity and the spectral range of the device are improved by adopting the light-induced substrate bias effect.

This invention provides an infrared thermal imaging method, relating to the field of infrared thermal imaging technology. The method utilizes a germanium infrared lens in an infrared thermal imaging system, whose surface is sequentially composed of subwavelength micro / nano structures and an anti-reflection film structure from the inside out. The infrared thermal imaging method includes: focusing target infrared radiation through the germanium infrared lens onto an infrared detection array; the infrared detection array converting the target infrared radiation into an electrical signal matrix; performing noise reduction and gain correction on the electrical signal matrix to obtain a preprocessed electrical signal matrix; performing temperature compensation on the preprocessed electrical signal matrix based on a temperature compensation formula and a transmittance temperature model to obtain a corrected signal matrix; and sequentially performing non-uniformity correction, image enhancement, and pseudo-color mapping on the corrected signal matrix before outputting and displaying the result. Using the method of this invention, higher transmittance, lower reflection loss, and more stable thermal imaging can be achieved.