2047 results about "Germanium" patented technology

The invention provides a germanium-silicon groove preparation method, which comprises the following steps of: forming a PMOS (P-channel Metal Oxide Semiconductor) gate structure and an NMOS (N-channel Metal Oxide Semiconductor) gate structure on a semiconductor substrate, arranging a first silicon nitride layer, a silicon oxide layer and a second silicon nitride layer in hard mask layers of the PMOS gate structure and the NMOS gate structure, exposing the second silicon nitride layer through a gate side wall, and covering a germanium-silicon mask layer, a patterned photoresist protection NMOS gate structure is formed, the germanium-silicon mask layer exposed in the PMOS region is etched, a groove is formed, and at least part of the second silicon nitride layer is reserved at the top of the PMOS gate to protect the silicon oxide layer; according to the method, the first silicon nitride layer and the germanium-silicon mask layer are etched, germanium-silicon deposition is carried out, and the residual second silicon nitride layer and the germanium-silicon mask layer are removed together through wet etching, so that the height difference of the hard mask layer caused by the conventional process of the PMOS gate and the NMOS gate is eliminated, the process load is avoided, the process steps are simplified, and the process cost is reduced.

The invention relates to the technical field of crystal material preparation, in particular to a ternary layered selenide Ge3Sb4Se7 semiconductor material and a preparation method thereof. The preparation method of the ternary layered selenide Ge3Sb4Se7 semiconductor material comprises the following steps that S001, germanium powder, antimony powder and selenium powder with the molar ratio being 3: 4: 7 serve as raw materials, the temperature is increased to 900-950 DEG C under the vacuum condition, and heat preservation is conducted for 12-24 h at the temperature; s002, after heat preservation is finished, the temperature is reduced to 475-500 DEG C at the cooling rate of 1-5 DEG C / min, and heat preservation is conducted for 3-5 days at the temperature; and after heat preservation is finished, furnace cooling or quenching cooling is performed to reach the room temperature, and the layered ternary selenide single-phase material with the chemical formula being Ge3Sb4Se7 is obtained. The ternary layered selenide Ge3Sb4Se7 semiconductor material prepared by the invention is a single-phase material and has the characteristics of low thermal conductivity and low resistivity, so that the ternary layered selenide Ge3Sb4Se7 semiconductor material has application potential in the fields of thermoelectric devices, photoelectric detection and the like.

Disclosed herein is a composition for selectively etching a first silicon germanium layer having a first germanium content in the presence of a silicon layer or a second silicon germanium layer having a second germanium content, where the first germanium content is higher than the second germanium content, the composition including:(a) from 0.1 to 10% by weight of an oxidizing agent;(b) from 1 to 20% by weight of an etchant including a source of fluoride ions;(c) from 0.001 to 3% by weight of a selectivity enhancer of formula Si(d) from 0.001 to 3% by weight of an additional selectivity enhancer of formula S41or derivatives thereof obtained by homocondensation of the compounds of formula S41 or by co-condensation of the compounds of formula S41 with silanes of formula S42 in a weight ratio of 0.1 or moreand(e) water.

The invention belongs to the technical field of semiconductors, and discloses a method for manufacturing a sigma trench in a semiconductor device, which comprises the following steps of: providing a substrate which comprises a first device region and a second device region; a PMOS (P-channel Metal Oxide Semiconductor) region gate and a PMOS gate mask layer are formed on the first active region of the first device region; exposing the top of the PMOS gate mask layer outside the first device region photoresist layer; depositing a deposition silicon oxide layer on the top of the second device region and the top of the PMOS gate mask layer; removing the photoresist layer in the first device region; etching to remove the natural silicon oxide layer on the surface of the first active region, further etching silicon in the first active region, and forming a U-shaped groove in the semiconductor substrate in the first device region; and carrying out TMAH etching on the U-shaped groove to form a sigma groove. According to the invention, in the process of embedding germanium-silicon into the source and the drain, the height difference between the PMOS and the NMOS is avoided, and the subsequent process is not influenced.

A package includes a bridging element (an OMIB), and first and second photonic paths, forming a bidirectional photonic path. The OMIB has first and second interconnect regions to connect with one or more dies. Third and fourth unidirectional photonic paths may couple between the first interconnect region and an optical interface (OI). A photonic transceiver has a first portion in the OMIB and a second portion in one of the dies. The first and the second portions may be coupled via an electrical interconnect less than 2 mm in length. The die includes compute elements around a central region, proximate to the second portion. The OMIB may include an electro-absorption modulator fabricated with germanium, silicon, an alloy of germanium, an alloy of silicon, a III-V material based on indium phosphide (InP), or a III-V material based on gallium arsenide (GaAs). The OMIB may include a temperature compensation for the modulator.

Provided are a water-soluble PVA film having good water sealing properties in addition to excellent water solubility while maintaining mechanical strength of the water-soluble PVA film and a package using the same. A water-soluble film of the present invention includes a polyvinyl alcohol resin. When a crystallinity index calculated using a diamond prism is Fd1 and a crystallinity index calculated using a germanium prism is Fg1 for FT-IR measurement of a first surface of the water-soluble film by ATR technique, Fd1 and Fg1 are 0.25≤Fd1≤0.65 and Fd1 / Fg1>1. Fd1 and Fg1 are preferably Fd1 / Fg1≤1.5.

The invention discloses a layered ternary selenide, a layered ternary selenide single crystal material and a preparation method of the layered ternary selenide single crystal material, and belongs to the technical field of crystal materials. The chemical formula of the layered ternary selenide is In2Ge2Se6, indium powder, germanium powder and selenium powder in a specific ratio are adopted as raw materials, synthesis of the layered ternary selenide In2Ge2Se6 single-phase material is achieved through the processes of high-temperature melting, heat preservation in a specific temperature interval and quenching, and the material has a narrow band gap and low heat conductivity and can be used for preparing the high-temperature-resistant layered ternary selenide In2Ge2Se6 single-phase material. And the thin-layer nanosheet single crystal material with the millimeter-level area can be prepared by a mechanical stripping method, and can be applied to the fields of semiconductor photoelectric devices, solar cells, thermoelectric devices and the like.

The invention relates to a three-waveband medium-long wave infrared optical filter and a preparation method, the three-waveband medium-long wave infrared optical filter comprises a front film system, a substrate and a back film system, and the substrate is located between the front film system and the back film system; the front film system is formed by alternately overlapping germanium layers and zinc selenide film layers; and the back film system is formed by alternately overlapping germanium layers and zinc selenide film layers. According to the invention, the light energy of three wave bands of 3780-4000 nm, 4500-4900 nm and 7850-9500 nm is improved, the luminous flux of other wave bands is well inhibited, the technical problem of infrared filtering windows in some special infrared spectrum detection systems is solved, and a new scheme is provided for the application of the infrared spectrum detection systems.

The present application discloses a cell contact structure, a semiconductor device, and a method for fabricating the semiconductor device. The cell contact structure includes a contact layer positioned on a substrate and enclosed by a plurality of bit line structures and a plurality of partition layers; and a liner layer positioned between the contact layer and the substrate, between the contact layer and the plurality of bit line structures, and between the contact layer and the plurality of partition layers. A top surface of the contact layer and a top surface of the liner layer are substantially coplanar. The liner layer includes doped polycrystalline silicon, doped polycrystalline germanium, or doped polycrystalline silicon germanium. The contact layer includes tungsten, titanium, or titanium nitride.

The invention discloses an evanescent coupling type germanium-silicon photoelectric detector based on a sub-wavelength grating, and belongs to the technical field of photoelectric detection. The germanium-silicon photoelectric detector comprises a silicon slab waveguide layer, a ridge waveguide layer, a germanium absorption region, an upper cladding and an electrode, the ridge waveguide layer comprises a first ridge waveguide area, a second ridge waveguide area, a third ridge waveguide area and a fourth ridge waveguide area, and the fourth ridge waveguide area is used for receiving optical signals and transmitting the optical signals to the third ridge waveguide area and the germanium absorption area; the waveguide of the third ridge waveguide region adopts a sub-wavelength grating with a gradually-changed size to regulate and control the coupling characteristic of light, so that the light can be gradually received by the first germanium absorption region and the second germanium absorption region on the two sides in the propagation process, and absorption light fields can be uniformly distributed in the germanium absorption regions. Signal distortion caused by the fact that the front end of germanium enters a saturation state under high-power incidence can be effectively avoided. The invention further provides a preparation method of the germanium-silicon photoelectric detector, the preparation method is compatible with the COMS technology, and the process complexity and the production cost are reduced.

A method includes forming an epitaxial stack over a semiconductor substrate, wherein the epitaxial stack comprises a plurality of sacrificial layers and a plurality of channel layers alternately arranged over the semiconductor substrate, and each of the sacrificial layers is a multi-layer film comprising a bottom epitaxial layer, a middle epitaxial layer over the bottom epitaxial layer, and a top epitaxial layer over the middle epitaxial layer, wherein the middle epitaxial layer has a lower germanium concentration than the bottom and top epitaxial layers; laterally recessing the sacrificial layers to form sidewall recesses alternating with the channel layers; forming inner spacers in the sidewall recesses; forming source / drain epitaxial structures on opposite sides of the channel layers.

The invention discloses a manufacturing method of 925 silver jewelry, which comprises the following steps: S1, preparing alloy components, S2, designing a cast tree structure, S3, casting, and S4, densifying a casting, the alloy components comprise 92.5-93.0% of silver, 1.0-3.0% of platinum, 0.05-0.5% of copper, 1.5-3.5% of zinc, 1.5-3.5% of indium, 0.03-0.3% of tin, 0.05-0.5% of germanium, 0.03-0.3% of rare earth, and 0.003-0.02% of boron. According to the manufacturing method, alloy components are optimized, the casting performance of the alloy components is improved, the casting process is optimized, the feeding capacity of molten metal is improved, shrinkage porosity and air holes are reduced, the initial density of the casting is improved, and subsequent composite treatment is carried out, so that the density from the surface to the shallow surface of the casting is further improved, grains are refined, and the surface roughness is further reduced; and the requirement of high brightness of the jewelry surface is met.

The invention provides an iron-based magnetically soft alloy strip and a preparation method and application thereof, the alloy composition of the iron-based magnetically soft alloy strip is FeaCobCrcSidBeWfAlgGehRei (MxNy) j, 75 < = a < = 81, 5 < = b < = 11.9, 5 < = c < = 10, 2 < = d < = 4, 2 < = e < = 4, 2 < = f < = 4, 1 < = g < = 3, 0.5 < = h < = 2, 0.5 < = i < = 1.5, 0.1 < = j < = 1, x: y = 1, and a + b + c + d + e + f + g + h + i + j = 100; m is Ti and / or Zr, and N is nitrogen; wherein the nitride material has an iron-based grain phase and a germanium-tungsten-containing precipitated phase, the nitride is distributed between the interfaces of the iron-based grain phase, and the average grain size of the iron-based grain phase is 5-20 nm. The iron-based magnetically soft alloy strip can be suitable for complex application scenes, and the magnetic performance and reliability of the iron-based magnetically soft alloy are improved.

The method comprises the following steps: weighing an oxide precursor of metal indium, an oxide precursor of metal M, an ammonium salt and a lithium salt according to a chemical formula of indium-based halide, fully mixing, and calcining in an inert atmosphere to obtain the indium-based halide solid electrolyte. Forming an indium-based halide solid electrolyte through a solid-phase reaction; wherein M is selected from at least one of magnesium, calcium, strontium, barium, aluminum, gallium, indium, bismuth, scandium, yttrium, zinc, germanium, tin, lanthanum, cerium, samarium, gadolinium, holmium, erbium and ytterbium. The method can greatly simplify the synthesis process, reduce the raw material cost and realize industrial batch preparation.

The present invention relates to a molybdenum-doped argyrodite-type sulfide electrolyte and a preparation method thereof. The argyrodite-type sulfide solid electrolyte and a preparation method thereof of the present invention belong to the technical field of battery materials. The chemical general formula of the sulfide electrolyte in the product developed by the present invention is: Li 6+2x Mo x P 1‑x S5Cl, where 0

The invention discloses two aluminosilicate molecular sieves with super-macroporous structures, the synthetic state schematic chemical composition of the molecular sieves is rROH: a (OH <-> or F <->): xAl2O3: SiO2: wH2O, the schematic chemical composition of the molecular sieves after roasting is (HAlO2) x.SiO2, the molecular sieves are NJU120-1, and after roasting of the NJU120-1, the molecular sieves have the molecular weight of 250,000-350,000. A framework structure composed of a T (Si, Al) O4 tetrahedron has a 22 * 10 * 10 membered ring three-dimensional pore channel system, the molecular sieve is NJU120-2, and after the NJU120-2 is roasted, the framework structure composed of the T (Si, Al) O4 tetrahedron has a 22 * 12 * 10 membered ring three-dimensional pore channel system. The preparation method is reasonable in design, is a novel germanium-free, high-silicon or pure-silicon and fully-connected super-macroporous molecular sieve material, not only has very important practical application value in the fields of catalysis, adsorption separation and the like, but also has very important theoretical significance for enriching molecular sieve structure families.

A semiconductor device may include a substrate including center and edge regions, active patterns on the substrate, channel patterns on the active patterns, source / drain patterns connected to the channel patterns, and gate electrodes on the channel patterns. Each of the source / drain patterns may include a buffer layer in contact with a corresponding one of the channel patterns and a main layer on the buffer layer. The main layer of each of the source / drain patterns may include first and second semiconductor layers, which may be sequentially stacked and contain germanium. A concentration of the germanium in the first semiconductor layer may be higher on the center region than on the edge region, and a concentration of the germanium in the second semiconductor layer may be lower on the center region than on the edge region.

Logic devices and methods of manufacturing logic devices are provided. The semiconductor logic device includes an n-channel gate-all-around (n-GAA) field-effect transistor on a substrate integrated with a p-channel gate-all-around (p-GAA) field-effect transistor on the substrate adjacent to the n-channel gate-all-around (p-GAA) field-effect transistor. The n-channel gate-all-around (n-GAA) field effect-transistor has a structure including a plurality of layers comprising silicon and a corresponding plurality of layers comprising at least 25% germanium alternatingly arranged in stacked pairs extending between a source region and a drain region, and the p-channel gate-all-around (p-GAA) field-effect transistor has a plurality of layers comprising in a range of from 5% to 15% germanium and a corresponding plurality of layers comprising at least 25% germanium alternatingly arranged in stacked pairs.

A molybdenum disulfide material having large lattice spacing and a preparation method therefor, a negative electrode, and a battery. The preparation method for a molybdenum disulfide material having large lattice spacing comprises: reacting a composite solution, in which a sulfur source, a molybdenum source and inducing metal ions are mixed, at a temperature maintained at 200-280°C, thereby obtaining a solid-liquid mixture after the reaction is finished; and separating out a solid substance in the solid-liquid mixture, thereby obtaining a molybdenum disulfide material having large lattice spacing, wherein the inducing metal ions are at least one of germanium ions, iron ions, gallium ions, nickel ions and manganese ions. The negative electrode material is prepared by using the preparation method. The negative electrode is prepared from the negative electrode material. The lithium-ion battery comprises the negative electrode. The molybdenum disulfide material having large lattice spacing prepared by using the preparation method has relatively large lattice spacing, and a battery assembled from a negative electrode prepared from same has relatively good electrochemical performance.

A miniaturized interferometric integrated photonic gyroscope structure with top silicon oxide, middle silicon oxide and bottom silicon oxide deposited on a silicon substrate comprises broadband optical source or a semiconductor optical amplifier with silicon nitride ring resonator wavelength filter, connected with a thin film lithium niobate or piezoelectrically actuated silicon nitride phase modulator vertically coupled with a silicon nitride waveguide spiral loop. The silicon nitride waveguide spiral loop is patterned on thin bottom oxide layer with air trenches below it and connected with a germanium detector either through photonic wire bonding or vertically integrated through reflecting mirror embedded into silicon wafer. Various methods of coupling alternative materials are described and the potential of connecting several spiral waveguides for enhanced sensitivity in a gyroscope application.

A semiconductor structure including a substrate, a first stack of channel layers on the substrate and a second stack of channel layers vertically aligned above the first stack. The width of the first is greater than the second. Additionally, the first channel layers can be cladded with germanium while the second channel layers can have a dog-bone shape.

The invention relates to the technical field of solar cell structures, in particular to a flexible multi-junction solar cell and a manufacturing method thereof. The flexible multi-junction solar cell comprises a PI film, a bonding metal layer, a back metal layer, an ohmic contact metal layer, a DBR reflecting layer, an epitaxial layer structure, an antireflection film and an N electrode. According to the flexible multi-junction solar cell, the GaAs substrate is firstly used, the sapphire substrate is used in the middle, the PI film is finally used as the final substrate, the mode of overturning the epitaxial wafer twice is adopted, the process is simple, and the problems that the consumption of precious metal is large due to multiple times of metal bonding, and the performance of the epitaxial wafer is affected due to high temperature of the evaporation and thermal stripping film process can be solved; germanium materials are saved, and cost is low; the PI film is used as the cell substrate, the weight is light, the mechanical strength is high, the cell substrate can be bent, and the design requirement of a solar cell array on a spacecraft can be met.

The invention discloses a method for recovering high-quality germanium concentrate from scrapped glass optical fibers, and belongs to the technical field of rare metal recovery. Crushing and screening the scrapped glass optical fiber to obtain optical fiber powder; the optical fiber powder and NaOH or Na2CO3 are uniformly mixed, the molar ratio of NaSi to NaGe of the mixture is (3-6): 1, and roasting is conducted for 2-4 h at the temperature of 500-800 DEG C; mixing the roasted material with water according to a solid-to-liquid ratio of 1: (4-10), heating to 50-100 DEG C, stirring and dissolving to generate a leaching solution; after filtering, feeding the filtered clear liquid into a spraying device filled with adsorption resin from an inlet of the device at the temperature of 5-40 DEG C and the flow speed of 5-50mm / min; and feeding an inorganic acid desorption agent into a spraying device from an outlet of the device at the temperature of 50-80 DEG C and the flow speed of 10-100mm / min, collecting the desorbed liquid, and adding water which is 3-5 times of the theoretical hydrolysis amount to obtain the germanium concentrate. The method is simple in technological process, low in energy consumption and high in metal direct recovery rate, the germanium mass content of the enriched germanium concentrate is larger than 40%, the germanium recovery rate is larger than 92%, the main component obtained after germanium recovery is sodium silicate, and multiple benefits of resources, economy, environment and the like are achieved.

The invention provides a heterojunction quantum well and a preparation method thereof, and the method comprises the steps: providing a substrate, and forming a heterojunction quantum well at one side of the substrate through a chemical vapor deposition method; the heterojunction quantum well comprises a first barrier layer, a quantum well layer and a second barrier layer which are stacked in sequence, the first barrier layer is located between the quantum well layer and the substrate, the first barrier layer and the second barrier layer are both made of germanium-silicon, when the heterojunction quantum well is a silicon heterojunction quantum well, the quantum well layer is a silicon quantum well layer, and when the heterojunction quantum well is a silicon quantum well layer, the second barrier layer is a silicon quantum well layer. When the heterojunction quantum well is a germanium heterojunction quantum well, the quantum well layer is a germanium quantum well layer; in the process of forming the heterojunction quantum well, the precursor is decomposed in a target temperature range, and a product obtained through decomposition is deposited on one side of the substrate to obtain the heterojunction quantum well; the precursor is subjected to multi-stage reaction during decomposition, and the target temperature range is 300-550 DEG C; the interface quality of the heterojunction quantum well can be greatly improved, the surface roughness of the film layer can be reduced, and high-quality preparation of the heterojunction quantum well is realized.

The invention relates to a 3 [mu] m SOI process integration method for an on-chip beam forming and wavelength division multiplexing system. The method comprises the steps of silicon waveguide etching, PN ion implantation, germanium-silicon epitaxy, germanium-silicon waveguide etching, metal layer growth and the like. In order to solve the problem that the silicon PN doping annealing temperature is higher than the germanium-silicon PN doping annealing temperature, the germanium-silicon epitaxial etching postposition technological process is developed, and the non-selective epitaxy and reverse etching modes are used, so that the problem that a wafer is uneven after silicon etching doping is solved. The method has extremely high application value in large-scale silicon photon integration application, and can be used for manufacturing complex active photon chips integrated with modulators, detectors and the like.

The invention discloses a far-infrared functional photobiotin composite material, an acupoint patch prepared from the far-infrared functional photobiotin composite material and application of the acupoint patch, and belongs to the technical field of far-infrared medical materials. The photobiotin composite material is prepared from the following components in parts by weight: 25 to 45 parts of modified stone needle, 20 to 30 parts of medical stone, 10 to 20 parts of germanite, 5 to 10 parts of silicon dioxide and 5 to 10 parts of aluminum oxide. The modified stone needle is prepared by processes of bentonite interlayer chambering, LaFe perovskite / TiO2 quantum dot intercalation, Prussian blue analogue loading and the like. The composite material has a far infrared emission characteristic and can generate resonance absorption with human tissues, negative oxygen ions are released through quantum dot photocatalysis, and a porous structure adsorbs inflammatory factors, namely LaFe perovskite / TiO2 quantum dot photocatalysis and cooperates with stone needle far infrared radiation to destroy bacterial cell membranes; and the medical stone releases trace elements to inhibit bacterial activity. The prepared acupoint patch is compounded with a medical pressure-sensitive adhesive through a compression molding process to generate micro-current to stimulate a TRPV1 ion channel, so that the treatment of facial paralysis, hypertension and diabetes mellitus is realized.

The present application discloses a cell contact structure, a semiconductor device, and a method for fabricating the semiconductor device. The cell contact structure includes a contact layer positioned on a substrate and enclosed by a plurality of bit line structures and a plurality of partition layers; and a liner layer positioned between the contact layer and the substrate, between the contact layer and the plurality of bit line structures, and between the contact layer and the plurality of partition layers. A top surface of the contact layer and a top surface of the liner layer are substantially coplanar. The liner layer includes doped polycrystalline silicon, doped polycrystalline germanium, or doped polycrystalline silicon germanium. The contact layer includes tungsten, titanium, or titanium nitride.

A semiconductor device is provided. The semiconductor device comprises an active pattern extending in a first direction, a plurality of gate structures on the active pattern and spaced apart in the first direction and a source / drain pattern between adjacent ones of the gate structures, wherein the source / drain pattern includes a semiconductor liner film in contact with the active pattern, a lower semiconductor filling film on the semiconductor liner film, an upper semiconductor filling film on the lower semiconductor filling film, and a semiconductor buffer film between the lower semiconductor filling film and the upper semiconductor filling film, each of the semiconductor liner film, the lower semiconductor filling film, the upper semiconductor filling film, and the semiconductor buffer film includes silicon-germanium, a germanium fraction of the semiconductor buffer film is smaller than a germanium fraction of the upper semiconductor filling film and a germanium fraction of the lower semiconductor filling film.

The invention discloses high-efficiency fluorescence conversion glass based on nitride red fluorescent powder composite binary germanium-phosphorus glass and a preparation method thereof, the high-efficiency fluorescence conversion glass is successfully prepared by taking binary germanium-phosphorus glass with specific components as a substrate and red nitride fluorescent powder as a luminescent material through low-temperature rapid sintering by a spark plasma sintering (SPS) technology. The fluorescent glass comprises the following raw materials: nitride red fluorescent powder and precursor glass powder, the precursor glass powder is prepared from the following raw materials in percentage by mole: 26 to 48 mol percent of GeO2 and 52 to 74 mol percent of P2O5, and the mass of the nitride red fluorescent powder is 1 to 7 percent of the mass of the total powder. Through a specific preparation process, the high-efficiency luminescence property, excellent thermal stability and high laser irradiation threshold value of the fluorescent glass are realized, and the high-performance requirement of laser illumination is met. Meanwhile, the preparation method is simple in preparation process, green, environment-friendly and low in production cost, and has a wide application prospect.

The invention relates to a dual-waveband medium-long wave infrared optical filter based on a germanium / zinc sulfide asymmetric film system and a preparation method of the dual-waveband medium-long wave infrared optical filter. The dual-waveband medium-long wave infrared optical filter comprises a front film system, a substrate and a back film system, the front film system and the back film system are formed by alternately overlapping germanium layers and zinc sulfide film layers; the average transmittance of the infrared optical filter in the wave band of 3800 nm to 4800 nm and the wave band of 8000 nm to 10000 nm is not lower than 91%. According to the two-waveband medium-long wave infrared optical filter disclosed by the invention, 3800 to 4800 nm amp is realized; according to the infrared filtering window, the light energy of medium waves and long waves of 8000-10000 nm is improved, the luminous flux of other wavebands is well inhibited, the technical problem of the infrared filtering window in some special infrared spectrum detection systems is solved, and a new scheme is provided for infrared application.