1689 results about "Germanium" patented technology

The invention relates to the technical field of crystal material preparation, in particular to a ternary layered selenide Ge3Sb4Se7 semiconductor material and a preparation method thereof. The preparation method of the ternary layered selenide Ge3Sb4Se7 semiconductor material comprises the following steps that S001, germanium powder, antimony powder and selenium powder with the molar ratio being 3: 4: 7 serve as raw materials, the temperature is increased to 900-950 DEG C under the vacuum condition, and heat preservation is conducted for 12-24 h at the temperature; s002, after heat preservation is finished, the temperature is reduced to 475-500 DEG C at the cooling rate of 1-5 DEG C / min, and heat preservation is conducted for 3-5 days at the temperature; and after heat preservation is finished, furnace cooling or quenching cooling is performed to reach the room temperature, and the layered ternary selenide single-phase material with the chemical formula being Ge3Sb4Se7 is obtained. The ternary layered selenide Ge3Sb4Se7 semiconductor material prepared by the invention is a single-phase material and has the characteristics of low thermal conductivity and low resistivity, so that the ternary layered selenide Ge3Sb4Se7 semiconductor material has application potential in the fields of thermoelectric devices, photoelectric detection and the like.

The invention belongs to the technical field of semiconductors, and discloses a method for manufacturing a sigma trench in a semiconductor device, which comprises the following steps of: providing a substrate which comprises a first device region and a second device region; a PMOS (P-channel Metal Oxide Semiconductor) region gate and a PMOS gate mask layer are formed on the first active region of the first device region; exposing the top of the PMOS gate mask layer outside the first device region photoresist layer; depositing a deposition silicon oxide layer on the top of the second device region and the top of the PMOS gate mask layer; removing the photoresist layer in the first device region; etching to remove the natural silicon oxide layer on the surface of the first active region, further etching silicon in the first active region, and forming a U-shaped groove in the semiconductor substrate in the first device region; and carrying out TMAH etching on the U-shaped groove to form a sigma groove. According to the invention, in the process of embedding germanium-silicon into the source and the drain, the height difference between the PMOS and the NMOS is avoided, and the subsequent process is not influenced.

A package includes a bridging element (an OMIB), and first and second photonic paths, forming a bidirectional photonic path. The OMIB has first and second interconnect regions to connect with one or more dies. Third and fourth unidirectional photonic paths may couple between the first interconnect region and an optical interface (OI). A photonic transceiver has a first portion in the OMIB and a second portion in one of the dies. The first and the second portions may be coupled via an electrical interconnect less than 2 mm in length. The die includes compute elements around a central region, proximate to the second portion. The OMIB may include an electro-absorption modulator fabricated with germanium, silicon, an alloy of germanium, an alloy of silicon, a III-V material based on indium phosphide (InP), or a III-V material based on gallium arsenide (GaAs). The OMIB may include a temperature compensation for the modulator.

The invention relates to a three-waveband medium-long wave infrared optical filter and a preparation method, the three-waveband medium-long wave infrared optical filter comprises a front film system, a substrate and a back film system, and the substrate is located between the front film system and the back film system; the front film system is formed by alternately overlapping germanium layers and zinc selenide film layers; and the back film system is formed by alternately overlapping germanium layers and zinc selenide film layers. According to the invention, the light energy of three wave bands of 3780-4000 nm, 4500-4900 nm and 7850-9500 nm is improved, the luminous flux of other wave bands is well inhibited, the technical problem of infrared filtering windows in some special infrared spectrum detection systems is solved, and a new scheme is provided for the application of the infrared spectrum detection systems.

The present application discloses a cell contact structure, a semiconductor device, and a method for fabricating the semiconductor device. The cell contact structure includes a contact layer positioned on a substrate and enclosed by a plurality of bit line structures and a plurality of partition layers; and a liner layer positioned between the contact layer and the substrate, between the contact layer and the plurality of bit line structures, and between the contact layer and the plurality of partition layers. A top surface of the contact layer and a top surface of the liner layer are substantially coplanar. The liner layer includes doped polycrystalline silicon, doped polycrystalline germanium, or doped polycrystalline silicon germanium. The contact layer includes tungsten, titanium, or titanium nitride.

The invention discloses an evanescent coupling type germanium-silicon photoelectric detector based on a sub-wavelength grating, and belongs to the technical field of photoelectric detection. The germanium-silicon photoelectric detector comprises a silicon slab waveguide layer, a ridge waveguide layer, a germanium absorption region, an upper cladding and an electrode, the ridge waveguide layer comprises a first ridge waveguide area, a second ridge waveguide area, a third ridge waveguide area and a fourth ridge waveguide area, and the fourth ridge waveguide area is used for receiving optical signals and transmitting the optical signals to the third ridge waveguide area and the germanium absorption area; the waveguide of the third ridge waveguide region adopts a sub-wavelength grating with a gradually-changed size to regulate and control the coupling characteristic of light, so that the light can be gradually received by the first germanium absorption region and the second germanium absorption region on the two sides in the propagation process, and absorption light fields can be uniformly distributed in the germanium absorption regions. Signal distortion caused by the fact that the front end of germanium enters a saturation state under high-power incidence can be effectively avoided. The invention further provides a preparation method of the germanium-silicon photoelectric detector, the preparation method is compatible with the COMS technology, and the process complexity and the production cost are reduced.

A method includes forming an epitaxial stack over a semiconductor substrate, wherein the epitaxial stack comprises a plurality of sacrificial layers and a plurality of channel layers alternately arranged over the semiconductor substrate, and each of the sacrificial layers is a multi-layer film comprising a bottom epitaxial layer, a middle epitaxial layer over the bottom epitaxial layer, and a top epitaxial layer over the middle epitaxial layer, wherein the middle epitaxial layer has a lower germanium concentration than the bottom and top epitaxial layers; laterally recessing the sacrificial layers to form sidewall recesses alternating with the channel layers; forming inner spacers in the sidewall recesses; forming source / drain epitaxial structures on opposite sides of the channel layers.

The invention discloses a manufacturing method of 925 silver jewelry, which comprises the following steps: S1, preparing alloy components, S2, designing a cast tree structure, S3, casting, and S4, densifying a casting, the alloy components comprise 92.5-93.0% of silver, 1.0-3.0% of platinum, 0.05-0.5% of copper, 1.5-3.5% of zinc, 1.5-3.5% of indium, 0.03-0.3% of tin, 0.05-0.5% of germanium, 0.03-0.3% of rare earth, and 0.003-0.02% of boron. According to the manufacturing method, alloy components are optimized, the casting performance of the alloy components is improved, the casting process is optimized, the feeding capacity of molten metal is improved, shrinkage porosity and air holes are reduced, the initial density of the casting is improved, and subsequent composite treatment is carried out, so that the density from the surface to the shallow surface of the casting is further improved, grains are refined, and the surface roughness is further reduced; and the requirement of high brightness of the jewelry surface is met.

The invention provides an iron-based magnetically soft alloy strip and a preparation method and application thereof, the alloy composition of the iron-based magnetically soft alloy strip is FeaCobCrcSidBeWfAlgGehRei (MxNy) j, 75 < = a < = 81, 5 < = b < = 11.9, 5 < = c < = 10, 2 < = d < = 4, 2 < = e < = 4, 2 < = f < = 4, 1 < = g < = 3, 0.5 < = h < = 2, 0.5 < = i < = 1.5, 0.1 < = j < = 1, x: y = 1, and a + b + c + d + e + f + g + h + i + j = 100; m is Ti and / or Zr, and N is nitrogen; wherein the nitride material has an iron-based grain phase and a germanium-tungsten-containing precipitated phase, the nitride is distributed between the interfaces of the iron-based grain phase, and the average grain size of the iron-based grain phase is 5-20 nm. The iron-based magnetically soft alloy strip can be suitable for complex application scenes, and the magnetic performance and reliability of the iron-based magnetically soft alloy are improved.

The method comprises the following steps: weighing an oxide precursor of metal indium, an oxide precursor of metal M, an ammonium salt and a lithium salt according to a chemical formula of indium-based halide, fully mixing, and calcining in an inert atmosphere to obtain the indium-based halide solid electrolyte. Forming an indium-based halide solid electrolyte through a solid-phase reaction; wherein M is selected from at least one of magnesium, calcium, strontium, barium, aluminum, gallium, indium, bismuth, scandium, yttrium, zinc, germanium, tin, lanthanum, cerium, samarium, gadolinium, holmium, erbium and ytterbium. The method can greatly simplify the synthesis process, reduce the raw material cost and realize industrial batch preparation.

A miniaturized interferometric integrated photonic gyroscope structure with top silicon oxide, middle silicon oxide and bottom silicon oxide deposited on a silicon substrate comprises broadband optical source or a semiconductor optical amplifier with silicon nitride ring resonator wavelength filter, connected with a thin film lithium niobate or piezoelectrically actuated silicon nitride phase modulator vertically coupled with a silicon nitride waveguide spiral loop. The silicon nitride waveguide spiral loop is patterned on thin bottom oxide layer with air trenches below it and connected with a germanium detector either through photonic wire bonding or vertically integrated through reflecting mirror embedded into silicon wafer. Various methods of coupling alternative materials are described and the potential of connecting several spiral waveguides for enhanced sensitivity in a gyroscope application.

A semiconductor structure including a substrate, a first stack of channel layers on the substrate and a second stack of channel layers vertically aligned above the first stack. The width of the first is greater than the second. Additionally, the first channel layers can be cladded with germanium while the second channel layers can have a dog-bone shape.

The invention provides a heterojunction quantum well and a preparation method thereof, and the method comprises the steps: providing a substrate, and forming a heterojunction quantum well at one side of the substrate through a chemical vapor deposition method; the heterojunction quantum well comprises a first barrier layer, a quantum well layer and a second barrier layer which are stacked in sequence, the first barrier layer is located between the quantum well layer and the substrate, the first barrier layer and the second barrier layer are both made of germanium-silicon, when the heterojunction quantum well is a silicon heterojunction quantum well, the quantum well layer is a silicon quantum well layer, and when the heterojunction quantum well is a silicon quantum well layer, the second barrier layer is a silicon quantum well layer. When the heterojunction quantum well is a germanium heterojunction quantum well, the quantum well layer is a germanium quantum well layer; in the process of forming the heterojunction quantum well, the precursor is decomposed in a target temperature range, and a product obtained through decomposition is deposited on one side of the substrate to obtain the heterojunction quantum well; the precursor is subjected to multi-stage reaction during decomposition, and the target temperature range is 300-550 DEG C; the interface quality of the heterojunction quantum well can be greatly improved, the surface roughness of the film layer can be reduced, and high-quality preparation of the heterojunction quantum well is realized.

The invention relates to a 3 [mu] m SOI process integration method for an on-chip beam forming and wavelength division multiplexing system. The method comprises the steps of silicon waveguide etching, PN ion implantation, germanium-silicon epitaxy, germanium-silicon waveguide etching, metal layer growth and the like. In order to solve the problem that the silicon PN doping annealing temperature is higher than the germanium-silicon PN doping annealing temperature, the germanium-silicon epitaxial etching postposition technological process is developed, and the non-selective epitaxy and reverse etching modes are used, so that the problem that a wafer is uneven after silicon etching doping is solved. The method has extremely high application value in large-scale silicon photon integration application, and can be used for manufacturing complex active photon chips integrated with modulators, detectors and the like.

The present application discloses a cell contact structure, a semiconductor device, and a method for fabricating the semiconductor device. The cell contact structure includes a contact layer positioned on a substrate and enclosed by a plurality of bit line structures and a plurality of partition layers; and a liner layer positioned between the contact layer and the substrate, between the contact layer and the plurality of bit line structures, and between the contact layer and the plurality of partition layers. A top surface of the contact layer and a top surface of the liner layer are substantially coplanar. The liner layer includes doped polycrystalline silicon, doped polycrystalline germanium, or doped polycrystalline silicon germanium. The contact layer includes tungsten, titanium, or titanium nitride.

The invention relates to a dual-waveband medium-long wave infrared optical filter based on a germanium / zinc sulfide asymmetric film system and a preparation method of the dual-waveband medium-long wave infrared optical filter. The dual-waveband medium-long wave infrared optical filter comprises a front film system, a substrate and a back film system, the front film system and the back film system are formed by alternately overlapping germanium layers and zinc sulfide film layers; the average transmittance of the infrared optical filter in the wave band of 3800 nm to 4800 nm and the wave band of 8000 nm to 10000 nm is not lower than 91%. According to the two-waveband medium-long wave infrared optical filter disclosed by the invention, 3800 to 4800 nm amp is realized; according to the infrared filtering window, the light energy of medium waves and long waves of 8000-10000 nm is improved, the luminous flux of other wavebands is well inhibited, the technical problem of the infrared filtering window in some special infrared spectrum detection systems is solved, and a new scheme is provided for infrared application.

In some embodiments, the present disclosure relates to a single-photon avalanche detector (SPAD) device including a silicon substrate including a recess in an upper surface of the silicon substrate. A p-type region is arranged in the silicon substrate below a lower surface of the recess. An n-type avalanche region is arranged in the silicon substrate below the p-type region and meets the p-type region at a p-n junction. A germanium region is disposed within the recess over the p-n junction.

The invention relates to the field of semiconductor single crystal material preparation processes, and discloses a process method for synergistically recovering indium and germanium from zinc leaching residues and preparing single crystals, which comprises the following steps: mixing a crude extract and a liquid metal solvent, carrying out low-temperature extraction to obtain mixed slurry, carrying out thermal-phase in-situ purification on the mixed slurry, separating a liquid-solid phase by utilizing thermal gradient migration, and carrying out solid-liquid separation on the separated liquid-solid phase. Performing directional solidification and purification to obtain an ultra-clean growth solution; analyzing the indium-germanium proportion of the ultra-clean growth solution, and supplementing pure metal for chemical component calibration; the ultra-clean growth solution with accurate components is used for liquid phase epitaxial growth to obtain single crystals, the thermodynamic principle is used for replacing physical filtration, so that particle heterogeneous nucleation centers are removed, the influence of chemical fluctuation of raw materials is eliminated through a built-in calibration link, and the physically pure growth solution with accurate components is prepared; the industrial preparation of the high-quality single crystal is ensured.

The invention relates to the technical field of special optical fibers, and discloses a high-sensitivity methane and temperature double-parameter detection PCF sensor based on an SPR effect. The sensor adopts a germanium-doped silicon dioxide photonic crystal fiber with a periodic air hole microstructure as a core element, and D-shaped polished surfaces are symmetrically arranged on the outer side of the fiber. A gold film and a functional material layer are respectively deposited on polished surfaces on two sides, one side is a Cryptophane-A methane sensitive film, the other side is a PDMS temperature sensitive material, and a two-parameter independent detection channel is constructed. After the design is optimized, the methane detection range is 0-3.5%, and the highest sensitivity can reach 68nm / %; the temperature detection range is 25-120 DEG C, and the maximum temperature sensitivity is 16 nm / DEG C. According to the invention, the SPR technology, the gas sensitive effect of the methane sensitive material and the thermo-optic effect of the temperature sensitive material are combined, so that high-precision synchronous detection of two parameters is realized. The sensor overcomes the defect of single measurement of a traditional optical fiber sensor, has the advantages of electromagnetic interference resistance, simple structure, high sensitivity, multi-parameter synchronous detection and the like, and is suitable for complex environments such as underground coal mines and the like.

A number of MOSFET architectures provide high-voltage capability (both drain-source breakdown voltage BVDSS and ON-state breakdown voltage BVON), low current leakage, and extended linearity. Embodiments of the invention overcome the limitations of conventional NEDMOS and LDMOS device designs by providing a low-resistance path for hole collection and by purposefully exhibiting multiple voltage thresholds VTH in different segments of the device. Embodiments includes NEDMOS and LDMOS device designs having multiple body contact regions for improved hole collection, sub-gate doped stripes or segments for even better hole collection and linearity, and sub-gate doped edge regions for increased local VTH and thus decreased current leakage. P– hole-collection stripes and P+ body contact regions may be formed of a semiconductor material that includes germanium. The inventive MOSFETs may be arranged as multi-MOSFET array elements, and multiple array elements may be arranged in a larger array.

The invention relates to a wide-temperature-range stable dual-band infrared optical filter for an extreme environment and a preparation method thereof. The wide-temperature-range stable dual-band infrared optical filter comprises a front film system, a substrate and a back film system, the front film system and the back film system are formed by alternately overlapping germanium layers and zinc sulfide film layers; the drift distance of the central wavelength of the passband of the infrared optical filter is less than 0.05% within the temperature range of-120 DEG C to + 85 DEG C. According to the invention, the internal stress of the film layer is obviously reduced through the optimized film system design, so that the excellent stability of the optical performance in an extreme temperature environment is realized, the technical problem that some special infrared spectrum detection systems work in a wide temperature range is solved, and a reliable solution is provided for high-end aerospace infrared application.

The invention provides a 3C-SiC wafer and a preparation method and application thereof. The preparation method comprises the following steps: etching and carbonizing a silicon substrate in sequence; and growing a silicon-germanium buffer layer on the surface of the silicon substrate after carbonization treatment, sequentially growing a 3C-SiC buffer layer and a polycrystalline 3C-SiC layer, finally removing the silicon substrate and the silicon-germanium buffer layer, and performing post-treatment to obtain the 3C-SiC wafer. According to the preparation method, the process window is wide, the yield is stable, the growth rate is high, the crystal quality of the obtained 3C-SiC wafer is high, the service life of a device is prolonged, and the utilization rate of the wafer is improved.

The invention relates to the technical field of organic electroluminescent devices, in particular to an organic metal iridium complex, a preparation method of the organic metal iridium complex, a luminescent material and an organic electroluminescent device. The organic metal iridium complex is selected from a compound shown in the following structural formula: # imgabs0 #, wherein R1 to R14 are respectively and independently selected from any one of hydrogen, deuterium, tritium, halogen, cyano, trimethyl silicon, trimethyl germanium, substituted or unsubstituted C1-C10 alkyl, substituted or unsubstituted C3-C8 cycloalkyl, substituted or unsubstituted C6-C20 aryl and substituted or unsubstituted 4-membered to 8-membered heterocyclic radical; the number of R10 on a benzene ring of dibenzofuran in the formula 1 is 1 or 2; s1 is selected from substituted or unsubstituted dibenzofuran, and S1 is fused with any position on a benzene ring of adjacent dibenzofuran. The organic metal iridium complex is low in synthesis cost, simple in synthesis process and difficult to purify, and an organic electroluminescent device formed by the organic metal iridium complex is high in luminous efficiency, long in service life and low in driving voltage.

The invention relates to the technical field of photoelectric detection, in particular to a global self-defined sampling method based on a germanium-silicon photoelectric detector array, which comprises the following steps of: S1, constructing the germanium-silicon photoelectric detector array with an n * t specification, receiving a target optical signal by using each detector unit as a pixel point, converting the target optical signal into an initial current signal, the signal is linearly amplified into a voltage signal through an external transimpedance amplifier; s2, digitalizing the voltage signal into a binary discrete digital signal through a high-speed analog-to-digital converter at the output end of the trans-impedance amplifier; and S3, performing global synchronous sampling to obtain a first group of data, performing repeated sampling in the same mode to obtain multiple groups of data, performing pixel-by-pixel superposition to generate fused data, and performing user-defined setting on the repeated sampling frequency within 1-1024 times. By customizing the number of repeated sampling times and data superposition, adapting to different light intensities and expanding the detection dynamic range, the problems of strong light overexposure and weak light underexposure are solved, the data consistency is guaranteed in combination with global synchronous sampling, and the detection precision and the environmental adaptability are improved.

A number of MOSFET architectures provide high-voltage capability (both drain-source breakdown voltage BVDSS and ON-state breakdown voltage BVON), low current leakage, and extended linearity. Embodiments of the invention overcome the limitations of conventional NEDMOS and LDMOS device designs by providing a low-resistance path for hole collection and by purposefully exhibiting multiple voltage thresholds VTH in different segments of the device. Embodiments includes NEDMOS and LDMOS device designs having multiple body contact regions for improved hole collection, sub-gate doped stripes or segments for even better hole collection and linearity, and sub-gate doped edge regions for increased local VTH and thus decreased current leakage. P− hole-collection stripes and P+ body contact regions may be formed of a semiconductor material that includes germanium. The inventive MOSFETs may be arranged as multi-MOSFET array elements, and multiple array elements may be arranged in a larger array.

The invention discloses a germanium single crystal growth intelligent optimization control system based on machine learning, which relates to the technical field of crystal growth control, and is characterized in that dimension conversion, timestamp synchronization and centralized indexing are carried out on multi-source sensor data to realize original data standardization; secondly, generating cleaned data with high credibility by adopting anomaly detection, drift correction and missing interpolation technologies, further fusing and storing the structured process parameters and the unstructured simulation data into a special database, and constructing a multi-dimensional joint index and version management mechanism; and finally, generating parameter adjustment suggestions by utilizing real-time trend extraction, online prediction and risk early warning in combination with an online optimization algorithm, and performing closed-loop feedback to realize intelligent monitoring and dynamic regulation and control on the germanium single crystal growth process. The scheme has the advantages of simplicity and convenience in implementation, high applicability, data interconnection and intercommunication and the like, the data consistency, fault early warning and process control precision are remarkably improved, and the quality of germanium single crystal products is effectively improved.

The invention provides a visible and infrared dual-band stealth material and a preparation method thereof. The visible and infrared dual-band stealth material comprises a thermochromic ink layer, a transparent conductive layer, a quartz glass substrate and a phase change material layer which are sequentially arranged, wherein the phase change material layer is arranged in a grid shape; and the material of the phase change material layer is selected from VO2 or sulfur germanium antimony tellurium. The surface phase-change material layer of the stealth material is arranged in a grid shape, the color-changing ink layer at the bottom can be directly seen by naked eyes, camouflage patterns are formed on the color-changing ink layer through printing, and the dynamic visible light camouflage function is achieved; when the top layer VO2 or chalcogenide germanium antimony tellurium is in a phase transformation state, the infrared reflectivity of the top layer VO2 or chalcogenide germanium antimony tellurium becomes high, the emissivity becomes low, and therefore the dynamic infrared camouflage function is achieved. Joule heat can be generated when voltage is applied to the transparent conductive layer, and the heat enables the color of the color-changing ink layer to change, so that the visible light camouflage function can be adapted to various scenes. Visible and infrared dual-band stealth can be achieved, dynamic stealth can also be achieved, and the application requirements of multiple spectrums and multiple scenes are met.

The invention discloses a solder composition alloy and a solder ball, and belongs to the technical field of alloys. The composition alloy of the solder provided by the embodiment of the invention comprises silver, copper, nickel, germanium, bismuth and tin, and by adjusting the content of silver, the alloy can have good heat cycle resistance and drop impact resistance; by adjusting the content of nickel, the thickness of a boundary metal part of a welding spot formed by the alloy can be effectively reduced, the situation that the welding spot is broken from the boundary metal part during a ball pushing test is avoided, and then the heat cycle resistance and the falling impact resistance of the alloy are improved; by adjusting the content of bismuth, the tensile strength and yield strength of the alloy can be improved, then the heat-resistant cycle performance of the alloy is improved, meanwhile, the melting point of the alloy is reduced, and energy needed in the welding process is reduced. Therefore, through the synergistic effect of all the components, the alloy can have good heat cycle resistance and falling impact resistance at the same time, and the performance of the alloy in other aspects can be improved.

The invention belongs to the technical field of preparation of high-performance thermoelectric materials, and particularly relates to a method for preparing a GeTe-based thermoelectric material by eliminating Ge enrichment through a chemical reaction. In order to further excavate the application potential of the GeTe material, the invention provides a high-performance GeTe-based thermoelectric material, the molecular formula of the high-performance GeTe-based thermoelectric material is (GeTe) 1-x (BiSbSe) x, and x is 0.03, 0.04, 0.05 or 0.06. The thermoelectric material is prepared by taking germanium particles, tellurium particles, bismuth particles, antimony particles and selenium particles as raw materials, respectively preparing GeTe and BiSbSe3 through a melting method, mixing, carrying out high-energy ball milling treatment, and carrying out spark plasma sintering to form blocks. According to the preparation method, Ge enrichment is completely eliminated through BiSbSe3 alloying reaction, so that the thermoelectric performance and the service stability of the prepared GeTe-based thermoelectric material are effectively improved.

The invention belongs to the technical field of thermometallurgy, and discloses a method for enriching and recovering germanium from germanium-containing lignite. The method comprises the following steps: pelletizing iron-containing minerals, germanium-containing lignite and a binder, carrying out reduction roasting on dried pellets at high temperature, reducing and volatilizing germanium in the roasting process, and collecting a volatile product GeO or GeS as a raw material for extracting germanium metal. The method for synergistically utilizing the iron-containing minerals and the germanium-containing lignite has the advantages of being short in process, high in operability, high in product value and the like.