1230 results about "P type doping" patented technology

Methods of forming p-type doped germanium-tin layers, systems for forming the p-type doped germanium-tin layers, and structures including the p-type doped germanium-tin layers are disclosed. The p-type doped germanium-tin layers include an n-type dopant, which allows relatively high levels of tin and/or p-type dopant to be included into the p-type doped germanium-tin layers.

A horizontal germanium silicon heterostructure photodetector comprising a horizontal germanium p-i-n diode disposed over a horizontal parasitic silicon p-i-n diode uses silicon contacts for electrically coupling to the germanium p-i-n through the p-type doped and n-type doped regions in the silicon p-i-n without requiring direct physical contact to germanium material. The current invention may be optically coupled to on-chip and/or off-chip optical waveguide through end-fire or evanescent coupling. In some cases, the doping of the germanium p-type doped and/or n-type doped region may be accomplished based on out-diffusion of dopants in the doped silicon material of the underlying parasitic silicon p-i-n during high temperature steps in the fabrication process such as, the germanium deposition step(s), cyclic annealing, contact annealing and/or dopant activation.

A lost cost method for fabricating SOI substrates is provided. The method includes forming a stack of p-type doped amorphous Si-containing layers on a semiconductor region of a substrate by utilizing an evaporation deposition process. A solid phase recrystallization step is then performed to convert the amorphous Si-containing layers within the stack into a stack of p-type doped single crystalline Si-containing layers. After recrystallization, the single crystalline Si-containing layers are subjected to anodization and at least an oxidation step to form an SOI substrate. Solar cells and/or other semiconductor devices can be formed on the upper surface of the inventive SOI substrate.

A method for fabricating a type of Trench Mask ROM cell comprises steps including: providing a substrate doped lightly with p-type dopant, sequentially forming a pad oxide layer and a nitride layer on the substrate; etching back the pad oxide layer, the nitride layer and the substrate to form plural trenches; a gate oxide layer being formed on surfaces of each trench; then, implanting n+-type ions into the substrate beneath the pad oxide layer and between each two adjacent trenches; and, forming a polysilicon layer on the gate oxide and pad oxide; finally, implanting n+-type ions into the substrate beneath the gate oxide layer on bottoms of selected trenches. And, it is appreciated that the sequence of the formation of plural trenches and implanting n+-type ions into substrate between each trench can be reversed in the embodiment without affecting subsequent steps.

The invention relates to an electronic device comprising a layer structure of organic layers, wherein said layer structure comprises a p-n-junction between an n-type doped organic layer provided as an organic matrix material doped with an n-type dopant and a p-type doped organic layer provided as a further organic matrix material doped with a p-type dopant, and wherein the n-type dopant and the p-type dopant both are molecular dopants, a reduction potential of the p-type dopant is equal or larger than about 0 V vs. Fc/Fc⁺, and an oxidation potential of the n-type dopant is equal or smaller than about −1.5 V vs. Fc/Fc⁺.

An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized boron hydride molecular clusters are implanted to form P-type transistor structures. For example, in the fabrication of Complementary Metal-Oxide Semiconductor (CMOS) devices, the clusters are implanted to provide P-type doping for Source and Drain structures and for Polygates; these doping steps are critical to the formation of PMOS transistors. The molecular cluster ions have the chemical form B_nH_x⁺ and B_nH_x⁻ where 10

Methods of forming high-current density vertical p-i-n diodes on a substrate are described. The methods include the steps of concurrently combining a group-IV-element-containing precursor with a sequential exposure to an n-type dopant precursor and a p-type dopant precursor in either order. An intrinsic layer is deposited between the n-type and p-type layers by reducing or eliminating the flow of the dopant precursors while flowing the group-IV-element-containing precursor. The substrate may reside in the same processing chamber during the deposition of each of the n-type layer, intrinsic layer and p-type layer and the substrate is not exposed to atmosphere between the depositions of adjacent layers.

A semiconductor structure for providing an epitaxial zinc oxide layer having p-type conduction for semiconductor device manufacture and methods of depositing the p-type zinc oxide layer. A zinc oxide layer is deposited epitaxially by molecular beam epitaxy on a crystalline zinc oxide substrate. The zinc oxide layer incorporates a p-type dopant, such as nitrogen, in an atomic concentration adequate to provide p-type conduction. The p-type zinc oxide layer may further incorporate an atomic concentration of a compensating species, such as lithium, sufficient to electronically occupy excess donors therein so that the efficiency of the p-type dopant may be increased.

Semiconductor devices containing group II-VI semiconductor materials are disclosed. The devices may include a p-n junction containing a p-type group II-VI semiconductor material and an n-type semiconductor material. The p-type group II-VI semiconductor includes a single crystal group II-VI semiconductor containing atoms of group II elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is greater than about 10¹⁶ atoms·cm⁻³, the semiconductor resistivity is less than about 0.5 ohm·cm, and the carrier mobility is greater than about 0.1 cm²/V·s. The semiconductor devices may include light emitting diodes, laser diodes, field effect transistors, and photodetectors.

A process for fabricating a semiconductor device having reduced capacitance for high frequency circuit protection is disclosed that comprises first forming an n+ buried layer in a p-type substrate by depositing n-type dopant on the top surface of the substrate and then drive in or by implanting n-type material into the substrate, and then growing an n-type epitaxial layer atop the n+ buried layer as the device layer. Trenches that surrounds the device region with depth extending from the top surface, going through the n+ buried layer and reaching down to the substrate are then formed and then an n+ layer on the sidewalls of the trenches is formed by diffusion or ion implantation. The trenches are then filled by growing a layer of thermal oxide on the sidewalls of the trenches and followed by deposition of plasma enhanced oxide, nitride, TEOS oxide CVD oxide, or polysilicon into the trenches and then planarizing the top surface by plasma etch back or polishing. Then n+ region of the device is formed by forming an oxide layer on the top surface of the device layer and then etching the oxide by photolithography, then depositing n-type dopant material and then driving in by high temperature diffusion. Finally p+ region of the device is formed by etching the oxide using photolithography, then depositing p-type dopant material by solid or gas phase deposition or ion implantation and then driving in by high temperature diffusion so that the breakdown voltage between cathode and anode of the device is set to a targeted voltage for high frequency circuit protection.

Methods for simultaneously forming doped regions of opposite conductivity using non-contact printing processes are provided. In one exemplary embodiment, a method comprises the steps of depositing a first liquid dopant comprising first conductivity-determining type dopant elements overlying a first region of a semiconductor material and depositing a second liquid dopant comprising second conductivity-determining type dopant elements overlying a second region of the semiconductor material. The first conductivity-determining type dopant elements and the second conductivity-determining type dopant elements are of opposite conductivity. At least a portion of the first conductivity-determining type dopant elements and at least a portion of the second conductivity-determining type dopant elements are simultaneously diffused into the first region and into the second region, respectively.

The present invention provides a double gated transistor and a method for forming the same that results in improved device performance and density. The preferred embodiment of the present invention provides a double gated transistor with asymmetric gate doping, where one of the double gates is doped degenerately n-type and the other degenerately p-type. By doping one of the gates n-type, and the other p-type, the threshold voltage of the resulting device is improved. Additionally, the preferred transistor design uses an asymmetric structure that results in reduced gate-to-drain and gate-to-source capacitance. In particular, dimensions of the weak gate, the gate that has a workfunction less attractive to the channel carriers, are reduced such that the weak gate does not overlap the source/drain regions of the transistor. In contrast the strong gate, the gate having a workfunction that causes the inversion layer to form adjacent to it, is formed to slightly overlap the source/drain regions. This asymmetric structure allows for the performance benefits of a double gate design without the increased capacitance that would normally result.

A two-layer buried oxide enables fabrication of a silicon-on-insulator MOSFET with thick-film source/drain regions and a thin-film channel region. After a hole has been etched in the substrate above a first buried oxide layer (i.e., in the upper substrate), oxygen is implanted to form a second buried layer within the substrate below the first buried layer (i.e., within the lower substrate). After a hole (aligned with the hole through the upper substrate) has been etched in the first buried layer, p-type dopants are implanted to form upper doped regions within the upper substrate to either side of the holes and a lower doped region within the lower substrate below the holes but above the second buried layer. An epitaxial layer roughly as thick as first buried layer is grown on the upper and lower substrates, a conformal insulating film is deposited onto the epitaxial layer, and a gate electrode is formed on the on the insulating film. Implantation of n-type dopants into both the epitaxial layer and the upper substrate to either side of the holes completes fabrication of the silicon-on-insulator device.

A metal oxide semiconductor device comprising a substrate, at least an isolation structure, a deep N-type well, a P-type well, a gate, a plurality of N-type extension regions, an N-type drain region, an N-type source region and a P-type doped region is provided. The N-type extension regions are disposed in the substrate between the isolation structures and either side of the gate, while the N-type drain region and the N-type source region are respectively disposed in the N-type extension regions at both sides of the gate. The P-type well surrounds the N-type extension regions, and the P-type doped region is disposed in the P-type well of the substrate and is isolated from the N-type source region by the isolation structure.

A SIC VDMOS transistor is integrated with a SiC SBD, in a seamless way, without any increase of the device area. The SiC SBD is integrated in the active area of the VDMOS by splitting the P-Wells, such that the lightly doped drift region extents all the way to the surface of semiconductor, and by trenching through the source of the VDMOS and partially through the P-Wells to reach the peak of the P-type doping in the P-Well regions. The source of the VDMOS is contacted from the top surface and from the vertical sidewalls of the trenched source and the forward voltage of the Schottky Barrier diode is tailored by using two different metals for the ohmic contact on the source and for the SBD.

A method of manufacturing a semiconductor device is disclosed and starts with a semiconductor substrate having a heavily doped N region of at the bottom main surface and having a lightly doped N region at the top main surface. There are a plurality of trenches in the substrate, with each trench having a first extending portion extending from said top main surface towards the heavily doped region. Each trench has two sidewall surfaces in parallel alignment with each other. A blocking layer is formed on the sidewalls and the bottom of each trench. Then a P type dopant is obliquely implanting into the sidewall surfaces to form P type doped regions. The blocking layer is then removed. The bottom of the trenches is then etched to remove any implanted P type dopants. The implants are diffused and the trenches are filled.

The present invention relates to the field of solar cells, and in particular to a main-gate-free and high-efficiency back-contact solar cell module, a main-gate-free and high-efficiency back-contact solar cell assembly, and a preparation process thereof. The solar cell module, comprising cells and an electrical connection layer, a backlight side of the cells having P-electrodes connected to a P-type doping layer and N-electrodes connected to a N-type doping layer, is characterized in that the electrical connection layer comprises a number of parallel leads each electrically connected to the P-electrodes or the N-electrodes. The present invention has the beneficial effect that a main-gate-free and high-efficiency back-contact solar cell module, a main-gate-free and high-efficiency back-contact solar cell assembly, and a preparation process thereof are provided, which can effectively the short-circuiting of the P-electrodes and the N-electrodes and has the advantages of low cost, high hidden-cracking resistance, high efficiency and high stability.

The invention relates to a gallium nitride based avalanche detector and a preparation method thereof. The gallium nitride based avalanche detector comprises a substrate, an N-type doped GaN ohmic contact layer, an unintentional doped GaN absorbing layer, an N-type doped Al component gradual changed AlGaN layer, an unintentional doped AlGaN avalanche multiplying layer, a P-type doped AlGaN ohmic contact layer, an N-type ohmic contact electrode and a P-type ohmic contact electrode, wherein the N-type doped GaN ohmic contact layer is prepared on the substrate; the unintentional doped GaN absorbing layer is prepared on the N-type doped GaN ohmic contact layer, and the area of the unintentional doped GaN absorbing layer is smaller than that of the N-type doped GaN ohmic contact layer; the N-type doped Al component gradual changed AlGaN layer is prepared on the unintentional doped GaN absorbing layer; the unintentional doped AlGaN avalanche multiplying layer is prepared on the N-type doped Al component gradual changed AlGaN layer; the P-type doped AlGaN ohmic contact layer is prepared on the unintentional doped AlGaN avalanche multiplying layer; the N-type ohmic contact electrode is prepared on the N-type doped GaN ohmic contact layer; and the P-type ohmic contact electrode is prepared on the P-type doped AlGaN ohmic contact layer.

One embodiment of a quantum well structure comprises an active region including active layers that comprise quantum wells and barrier layers wherein some or all of the active layers are p type doped. P type doping some or all of the active layers improves the quantum efficiency of III-V compound semiconductor light emitting diodes by locating the position of the P-N junction in the active region of the device thereby enabling the dominant radiative recombination to occur within the active region. In one embodiment, the quantum well structure is fabricated in a cluster tool having a hydride vapor phase epitaxial (HVPE) deposition chamber with a eutectic source alloy. In one embodiment, the indium gallium nitride (InGaN) layer and the magnesium doped gallium nitride (Mg—GaN) or magnesium doped aluminum gallium nitride (Mg—AlGaN) layer are grown in separate chambers by a cluster tool to avoid indium and magnesium cross contamination. Doping of group III-nitrides by hydride vapor phase epitaxy using group III-metal eutectics is also described. In one embodiment, a source is provided for HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the source including a liquid phase mechanical (eutectic) mixture with a group III species. In one embodiment, a method is provided for performing HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the method including using a liquid phase mechanical (eutectic) mixture with a group III species.