61 results about "Dopant Activation" patented technology

In one embodiment, the invention generally provides a method for annealing a doped layer on a substrate including depositing a polycrystalline layer to a gate oxide layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer. The method further includes exposing the doped polycrystalline layer to a rapid thermal anneal to readily distribute the dopant throughout the polycrystalline layer. Subsequently, the method includes exposing the doped polycrystalline layer to a laser anneal to activate the dopant in an upper portion of the polycrystalline layer.

The present invention relates to apparatuses for continuous and efficient heat-treatment of semiconductor films upon thermally susceptible non-conducting substrates at a minimum thermal budget, and more particularly, to a polycrystalline silicon thin-film transistors (poly-Si TFTs) and PN diodes on glass substrates for various applications of liquid crystal displays (LCDs), organic light emitting diodes (OLEDs), and solar cells. According to the apparatuses of the present invention, the semiconductor films can be heat-treated without damaging the thermally susceptible substrates: e.g., crystallization of amorphous silicon films at the minimum thermal budget acceptable for the use of glass, enhancing kinetics of dopant activation at the minimum thermal budget acceptable for the use of glass.

The invention includes methods of forming field effect transistors. In one implementation, the invention encompasses a method of forming a field effect transistor on a substrate, where the field effect transistor comprises a pair of conductively doped source / drain regions, a channel region received intermediate the pair of source / drain regions, and a transistor gate received operably proximate the channel region. Such implementation includes conducting a dopant activation anneal of the pair of source / drain regions prior to depositing material from which a conductive portion of the transistor gate is made. Other aspects and implementations are contemplated.

Methods are disclosed of making linear and cross-linked, HMW (high molecular weight) polysilanes and polygermanes, polyperhydrosilanes and polyperhydrogermanes, functional liquids containing the same, and methods of using the liquids in a range of desirable applications. The silane and germane polymers are generally composed of chains of Si and / or Ge substituted with R′ substituents, where each instance of R′ is, for example, independently hydrogen, halogen, alkenyl, alkynyl, hydrocarbyl, aromatic hydrocarbyl, heterocyclic aromatic hydrocarbyl, SiR″3, GeR″3, PR″2, OR″, NR″2, or SR″; where each instance of R″ is independently hydrogen or hydrocarbyl. The cross-linked polymers can be synthesized by dehalogenative coupling or dehydrocoupling. The linear polymers can be synthesized by ring-opening polymerization. The polymers can be further modified by halogenation and / or reaction with the source of hydride to furnish perhydrosilane and perhydrogermane polymers, which are used in liquid ink formulations. The synthesis allows for tuning of the liquid properties (e.g., viscosity, volatility, and surface tension). The liquids can be used for deposition of films and bodies by spincoating, inkjetting, dropcasting, etc., with or without the use of UV irradiation. The deposited films can be converted into amorphous and polycrystalline silicon or germanium, and silicon or germanium oxide or nitride by curing at 400-600 DEG C. and (optionally) laser- or heat-induced crystallization (and / or dopant activation, when dopant is present).