The application discloses a
silicon carbide wafer processing technology, which comprises the following steps: S1, permanently bonding a
silicon carbide substrate on a
silicon carrier plate; S2, completing
thinning of the
silicon carbide substrate and other front surface processes of the
wafer except high-temperature processes; S3, transferring the
silicon carbide substrate to a
graphite tray, releasing the permanent bonding between the
silicon carbide substrate and the silicon carrier plate, and removing the silicon carrier plate; S4, carrying out high-temperature processes on the silicon
carbide substrate by using the
graphite tray; S5, bonding a glass carrier plate to the back surface of the silicon carbide substrate and removing the
graphite tray; S6, bonding a glass carrier plate to the front surface of the silicon carbide substrate and removing the glass carrier plate on the back surface by debonding; S7, completing
wafer processes on the back surface of the silicon carbide substrate; and S8, transferring the silicon carbide substrate to a
cutting mold, removing the glass carrier plate on the front surface by debonding, and completing wafer
cutting. The silicon carbide substrate is thinned by using the silicon carrier plate, and the silicon carbide substrate is carried out high-temperature processes by using the graphite tray, so that the
processing difficulty of the silicon carbide material with high
hardness and
high activation temperature is overcome.