8425 results about "Boron nitride" patented technology

A method for forming a Boron doped metallic film, such as Titanium Boron Nitride, is disclosed. The method allows for creation of the metallic film with a high work function and low resistivity, while limiting the increase in effective oxide thickness. The method comprises a thin metallic layer deposition step as well as a Boron-based gas pulse step. The Boron-based gas pulse deposits Boron and allows for the removal of excess halogens within the metallic film. The steps may be repeated in order to achieve a desired thickness of the metallic film.

Methods for forming boron-containing films are provided. The methods include introducing a boron-containing precursor and a nitrogen or oxygen-containing precursor into a chamber and forming a boron nitride or boron oxide film on a substrate in the chamber. In one aspect, the method includes depositing a boron-containing film and then exposing the boron-containing film to the nitrogen-containing or oxygen-containing precursor to incorporate nitrogen or oxygen into the film. The deposition of the boron-containing film and exposure of the film to the precursor may be performed for multiple cycles to obtain a desired thickness of the film. In another aspect, the method includes reacting the boron-containing precursor and the nitrogen-containing or oxygen-containing precursor to chemically vapor deposit the boron nitride or boron oxide film.

The present invention provides a low dielectric constant copper diffusion barrier film suitable for use in a semiconductor device and methods for fabricating such a film. Some embodiments of the film are formed of a silicon-based material doped with boron. Other embodiments are formed, at least in part, of boron nitride. Some such embodiments include a moisture barrier film that includes oxygen and / or carbon. Preferred embodiments of the copper diffusion barrier maintain a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.

In one example of the invention, a method for depositing a tantalum-containing material on a substrate in a process chamber is provided which includes exposing the substrate to a tantalum precursor that contains TAIMATA and to at least one secondary precursor to deposit a tantalum-containing film during an atomic layer deposition (ALD) process. The ALD process is repeated until the tantalum-containing film is deposited with a predetermined thickness. Usually, the TAIMATA is preheated prior pulsing the tantalum precursor into the process chamber. A metal layer, such as tungsten or copper, may be deposited on the tantalum-containing material. The tantalum-containing material may include tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride or tantalum oxynitride. The tantalum-containing material may be deposited as a barrier or adhesion layer within a via or as a gate electrode material within a source / drain device.

A plasma 10 is generated within a film formation chamber 2, and mainly a nitrogen gas 11 is excited within the film formation chamber 2. Then, the excited nitrogen gas 11 is reacted with a diborane gas 13 diluted with a hydrogen gas, thereby forming a boron nitride film 15 on a substrate 4. Thus, the boron nitride film 15 excellent in mechanical and chemical resistance, high in thermal conductivity, and having a low relative dielectric constant κ can be formed speedily.

The present invention provides an adhesion method of improving the heat conduction in a fixed direction by using a heat conductive adhesive made by blending boron nitride powder and adhesive polymer and adhering by orienting boron nitride powder in the heat conductive adhesive to the fixed direction under the magnetic atmosphere and an electronic component for effectively dissipating heat generated from semiconductor device 2, power source 4, light source or other components used for the electric products, and an electronic component excellent in radiation.

The present invention discloses a CMP pad dresser which has a plurality of uniformly spaced abrasive particles protruding therefrom. The abrasive particles are super hard materials, and are typically diamond, polycrystalline diamond (PCD), cubic boron nitride (cBN), or polycrystalline cubic boron nitride(PcBN). The abrasive particles are brazed to a substrate which may be then coated with an additional anti-corrosive layer. The anti-corrosive layer is usually a diamond or diamond-like carbon which is coated over the surface of the disk to prevent erosion of the brazing alloy by the chemical slurry used in conjunction with the CMP pad. This immunity to chemical attack allows the CMP pad dresser to dress the pad while it is polishing a workpiece. In addition to even spacing on the substrate, the abrasive particles extend for a uniform distance away from the substrate, allowing for even grooming or dressing of a CMP pad both in vertical and horizontal directions. A method of producing such a CMP pad dresser is also disclosed.

This invention relates to a thermally conductive moldable polymer blend comprising a thermoplastic polymer having a tensile at yield of at least 10,000 psi; at least 60% by weight of a mixture of boron nitride powders having an average particle size of at least 50 microns; and a coupling agent. The composition displays a thermal conductivity of at least about 15 W / m DEG K and it is capable of being molded using high speed molding techniques such as injection molding.

Methods for forming a boron nitride film by a plasma enhanced atomic layer deposition (PEALD) process are provided. The methods may include: providing a substrate into a reaction chamber; and performing at least one unit deposition cycle of a PEALD process, wherein a unit cycle comprises, contacting the substrate with a vapor phase reactant comprising a boron precursor, wherein the boron precursor comprises less than or equal to two halide atoms per boron atom; and contacting the substrate with a reactive species generated from a gas comprising a nitrogen precursor.

Thermally conductive compositions containing spherical boron nitride filler particles having an average aspect ration of less than 2.0 in a polymer matrix.

Nanostructures provide improved contact to augment heat-exchange surfaces of various devices or structures. In one embodiment, an article of manufacture has a body having a heat-exchanging surface and nanostructures disposed on the heat-exchanging surface. The nanostructures are arranged to enhance thermal transfer between said body and an object distinct from said body and may be arranged to form a substantially continuous film. Examples of suitable nanostructures include carbon and / or boron nitride nanotubes, which may be grown on the heat-exchanging surface.

A sintered polycrystalline composite for cutting tools that includes a plurality of diamond or cubic boron nitride particles; a plurality of nanotube materials; and a refractory or binder material is disclosed. Methods of forming such polycrystalline composites that include integrating or mixing a plurality of nanotube materials with diamond or cubic boron nitride particle and / or refractory or binder particles are also disclosed.

A sintered body for cutting tools that includes hard particle phase comprising a plurality of hard particles, wherein at least a portion of the hard phase particles comprise a coating deposited by atomic layer deposition disposed thereon; and a binder phase is disclosed. The hard particles that may be included in the sintered bodies may include tungsten carbide, diamond, and boron nitride particles.

A method of forming pellets or agglomerates of high density boron nitride from high purity hexagonal boron nitride by crushing the high purity hexagonal boron nitride into boron nitride particles extending over a size range of at least 100 microns with the majority of the particles having a particle size above 50 microns and cold pressing the crushed particles into a compacted form. The compacted form is then granulated into a granulated powder and again cold pressed to form pellets or agglomerates of boron nitride particles with the operations of cold pressing and granulation occurring in one or more stages.

Graphene layers, hexagonal boron nitride layers, as well as other materials made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphene layer is provided. Such a method may include mixing a carbon source with a horizontally oriented molten solvent, precipitating the carbon source from the molten solvent to form a graphite layer across the molten solvent, and separating the graphite layer into a plurality of graphene layers.

A method and apparatus are provided to form spacer materials adjacent substrate structures. In one embodiment, a method is provided for processing a substrate including placing a substrate having a substrate structure adjacent a substrate surface in a deposition chamber, depositing a spacer layer on the substrate structure and substrate surface, and etching the spacer layer to expose the substrate structure and a portion of the substrate surface, wherein the spacer layer is disposed adjacent the substrate structure. The spacer layer may comprise a boron nitride material. The spacer layer may comprise a base spacer layer and a liner layer, and the spacer layer may be etched in a two-step etching process.

The invention relates to a method for preparing a C / SiC composite material through a low-cost fused silicon impregnation method, which comprises the following steps: performing calcining pretreatment on a carbon felt or graphite felt at 400-600 temperature; immersing the pretreated carbon felt or graphite felt in a melamine and boric acid solution, thus coating a boron nitride protective layer; immersing in a carbon / silicon carbide slurry water solution, performing impregnation to ensure that pores of the carbon felt or graphite felt are fully filled with carbon / silicon carbide, placing in a sintering furnace, and performing primary fused silicon impregnation treatment at 1600-1800 DEG C; immersing in liquid phenolic resin, and performing carbonization treatment under the protection of an inert atmosphere at 800-1000 DEG C to ensure that all the resin is carbonized; and finally, performing secondary fused silicon impregnation treatment to ensure that carbon produced by carbonization of the resin totally reacts with silicon to generate silicon carbide, thus obtaining the C / SiC composite material. The obtained C / SiC composite material is high in density, low in air pore and free silicon content, and favorable in material strength, toughness and frictional wear performance, and can be used for manufacturing of brake pads.

A low viscosity filler boron nitride agglomerate particles having a generally spherical shape bound together by an organic binder and to a process for producing a BN powder composition of spherically shaped boron nitride agglomerated particles having a treated surface layer which controls its viscosity.

Novel boron nitride agglomerated powders are provided having controlled density and fracture strength features. In addition methods for producing same are provided. One method calls for providing a feedstock powder including boron nitride agglomerates, and heat treating the feedstock powder to form a heat treated boron nitride agglomerated powder. In one embodiment the feedstock powder has a controlled crystal size. In another, the feedstock powder is derived from a bulk source.

A polycrystalline diamond compact cutter that includes a thermally stable polycrystalline diamond layer, a carbide substrate, and a polycrystalline cubic boron nitride layer interposed between the thermally stable polycrystalline diamond layer and the carbide substrate is disclosed. A method of forming a polycrystalline diamond compact cutter that includes the steps of providing a carbide substrate, disposing a polycrystalline cubic boron nitride layer on the carbide substrate, disposing a polycrystalline diamond layer on the polycrystalline cubic boron nitride layer, and treating at least a portion of the polycrystalline diamond layer to form a thermally stable polycrystalline diamond layer is also disclosed.

Graphene layers made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphite film can include heating a solid substrate under vacuum to a solubilizing temperature that is less than a melting point of the solid substrate, solubilizing carbon atoms from a graphite source into the heated solid substrate, and cooling the heated solid substrate at a rate sufficient to form a graphite film from the solubilized carbon atoms on at least one surface of the solid substrate. The graphite film is formed to be substantially free of lattice defects.

The present invention relates to a powder comprising boron nitride particles having an aspect ratio of from about 50 to about 300. The present invention also relates to a method of making delaminated boron nitride powder. This method involves providing boron nitride powder and milling the boron nitride powder in a mixture including a milling media and a milling liquid under conditions effective to produce delaminated boron nitride powder.

A method for producing process equipment having a wear surface having extended resistance to one or more of abrasion, erosion, or corrosion, associated with fillers or solids processed by said process equipment includes applying to said process equipment wear surface a metal matrix coating filled with superabrasive particles. Diamond and cubic boron nitride superabrasive particles can fill the metal matrix, which can be a nickel coating.

The invention provides a heat-conduction heat-dissipation interface material and a manufacturing method thereof, wherein the heat-conduction heat-dissipation interface material is applied to the field of heat dissipation of electronic products. The heat-conduction heat-dissipation interface material comprises a heat-conduction heat-dissipation layer and a surface protective material layer, wherein the heat-conduction heat-dissipation layer consists of one or more of graphite, nano graphite, crystalline flake graphite, graphene, pyrolytic carbon, pyrolytic graphite, graphite powder, carbon nano tubes, carbon fibers, graphite fibers, resin, ceramic fibers, quartz fibers, metal fibers, zirconia, boron nitride, silicon nitride, boron carbide, silicon carbide, magnesia powder, metasillicio acid fibers, calcium silicate aluminum fibers, aluminium oxide fibres, copper power, aluminium power, silver power, tungsten power and molybdenum power; and the surface protective material layer is a polymeric membrane. The heat-conduction heat-dissipation interface material manufactured according to the materials and the method provided by the invention has the advantages of effectively improved heat-dissipation performance, small volume, light weight and small thickness, can be used for prolonging the service life of an electronic component, and simultaneously is easy to produce and process.

A method for manufacturing a component having increased thermal conductivity through layer-by-layer construction. At least one section of the component is constructed by applying a layer section having predetermined dimensions of a composite material of a metal and / or a metal alloy and particles of a highly heat-conducting material, including diamond and / or cubic boron nitride, in a predetermined area on a base layer by melting the metal or the metal alloy a heat source, in such a way that the metal and / or metal alloy form(s) within the predetermined dimensions a cohesive matrix, in which particles of the highly heat-conducting material are embedded, and then cooling.

A polycrystalline diamond compact cutter that includes a thermally stable polycrystalline diamond layer, a carbide substrate, and a polycrystalline cubic boron nitride layer interposed between the thermally stable polycrystalline diamond layer and the carbide substrate is disclosed. A method of forming a polycrystalline diamond compact cutter that includes the steps of providing a carbide substrate, disposing a polycrystalline cubic boron nitride layer on the carbide substrate, disposing a polycrystalline diamond layer on the polycrystalline cubic boron nitride layer, and treating at least a portion of the polycrystalline diamond layer to form a thermally stable polycrystalline diamond layer is also disclosed.

The present invention relates generally to methods for the synthesis of various solids such as diamonds, diamonds films, boron nitride and other similar materials. This invention specifically relates to utilizing novel sources of reaction species (e.g., in the case of diamond formation, novel sources of carbon and / or hydrogen and / or seeds) for the manufacture of various materials and the use of such materials for various commercial purposes.

In one example of the invention, a method for depositing a tantalum-containing material on a substrate in a process chamber is provided which includes exposing the substrate to a tantalum precursor that contains TAIMATA and to at least one secondary precursor to deposit a tantalum-containing material during an atomic layer deposition (ALD) process. The ALD process is repeated until the tantalum-containing material is deposited having a predetermined thickness. Usually, the TAIMATA is preheated prior to pulsing the tantalum precursor into the process chamber. Subsequently, a metal layer, such as tungsten or copper, may be deposited on the tantalum-containing material. The tantalum-containing material may contain tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride, or tantalum oxynitride. The tantalum-containing material may be deposited as a barrier or adhesion layer within a via or as a gate electrode material within a source / drain device.