5383results about How to "The overall thickness is thin" patented technology

The manufacturing of electronic components on individual substrates made of an insulating material includes molding, in a silicon wafer, an insulating material with a thickness corresponding to the final thickness desired for the substrates, manufacturing the electronic components, and removing the silicon from the rear surface of the wafer after manufacturing of the components.

The present invention provides a nano-graphite alkenyl composite wave-absorbing material and method of preparing the same. The wave-absorbing material includes graphite alkenyl and nanoparticle deposition material which is metal or metallic oxide; the weight percentage of the graphite alkenyl is 15-95%, the weight percentage of the nanoparticle deposition material is 5-85%, the metal or metallic oxide nanoparticle is deposited on the graphite alkenyl surface and between the layers, prepared by the metal salt and graphite alkenyl in the electrodeposition pattern. The nano-graphite alkenyl composite wave-absorbing material is provided with stable capability, thin thickness, low density, corrosion resistant, simple manufacture, good wave-absorbing capability and favourable application foreground.

An electrostatic chuck for attracting an insulative substrate, used under a vacuum atmosphere, comprises: a dielectric layer having a first surface which attracts an insulative substrate, and a second surface on which are provided a plurality of electrodes; an insulative support base plate fixing the dielectric layer thereon; a plurality of electrically conductive terminals provided on the insulative support base plate; and an electrical connection between the electrodes and the electrically conductive terminals.

The invention discloses a wearable multi-information fusion gait analysis system and a method thereof. The wearable multi-information fusion gait analysis system is characterized by comprising a flexible sensor module, a three-axis acceleration and gyro sensor, a microprocessor, a power supply module, a transmission module, a positioning module, a client side, a cloud server and the like. The flexible sensor is used for measuring the gait data of the bottoms of feet when a user walks, the gait data is sent to the cloud server after being analyzed through the microprocessor, and a gait situation is displayed on a user client side in real time. If the user is under an emergency situation, the guardian of the user can receive alarming information and position the position of the user in real time so as to rescue the user. The wearable multi-information fusion gait analysis system can cause the guardian to know the gait situation of a person under guardianship at any time, and receives the alarming information and the positioning information generated when the person under guardianship moves, so that support and help can be provided for the rehabilitation of a foot patient, the gait monitoring of the aged, walk learning of children and the like.

The invention discloses an optical fiber Fabry-Perot sound pressure sensor manufacturing method based on a graphene membrane and a measuring method and device thereof. A sensor is manufactured based on the graphene membrane and the optical fiber Fabry-Perot interference optical principle. Firstly, a single mode fiber is rinsed and processed, the graphene membrane is transferred, and the graphene membrane is adsorbed to a zirconium oxide single mode inserting core; then, the zirconium oxide single mode inserting core is inserted into the processed single mode fiber from the other end. Therefore, two reflecting surfaces of Fabry-Perot interference are formed by the end face of the single mode fiber and the graphene membrane, an optical fiber-air-graphene membrane interference cavity is formed, an interference cavity length detecting device is set up, interference spectrum signals are demodulated by using a two-peak method, and the high sensitivity detection of weak sound pressure signals is achieved. The sensor has the advantages of being simple in manufacturing, high in sensitivity, small in size, resistant to electromagnetic interference and the like, the problem that a sensor is low in sensitivity due to the limitation of the reduction of the thickness of a membrane in the prior art is solved, the sensitivity of the membrane type sound pressure sensor is improved, and the sensor can be expected to be applied to the underwater sound field, the electroacoustic field, medical field, biomedical engineering filed and the like.

The invention relates to a proton exchange membrane cell metal bipolar plate which is composed of a cathode chamber monopole plate and an anode chamber monopole plate which are made of metal sheets; the front surface of each of the monopole plates is respectively provided with a cathode chamber and an anode chamber, and cooling water chambers are arranged at the back surfaces of the cathode chamber monopole plate and the anode chamber monopole plate; flow passages composed of concavo convex grooves are arranged at the front and back surfaces of the monopole plates, the concavo convex grooves arranged on the front and back surfaces are corresponding to each other, the bumps on the front surfaces are the concave grooves on the back surfaces, and the concave grooves on the front surfaces are the bumps on the back surfaces; the concavo convex grooves on the front surfaces respectively form the flow passages of the cathode and anode chambers, and the concavo convex grooves on the back surfaces respectively form the flow passages of the cooling water chambers. The proton exchange membrane cell metal bipolar plate has the advantages that the manufactured bipolar plate is thin, the flow bodies are strictly separated, the flow body distribution is good, the weight is light, the processing is simple and the processing cost is low.

An anticorrosion and antiwear ceramic paint is prepared from epoxy resin (28.5-35 wt.portions), dibutyl phthalate (3.75-6), mixed solvent of xyrene and n-butyl ester (20-24), gas-phase SiO2 (0.5-1) and ceramic powder (38-45) which contains TiO2 (3-6.3), Al2O3 (11.7-20) and Si3N4 (16-20.45). The weight ratio of main component to slidifying agent is (14.5-17):1. It can be directly applied to the surfaces of metal, glass fibre, plastic, or concrete with the advantages of high antiwear performance and adhesion, and thin and compact coated layer.

The invention relates to a proton exchange membrane fuel cell metal bipolar plate, which consists of a cathode monopolar plate and an anode monopolar plate made of sheet metal, wherein a flow passage of the monopolar plates consists of a flow field flow passage, a distribution flow passage and an inlet-outlet passage, and the proton exchange membrane fuel cell metal bipolar plate is characterized in that the distribution flow passage is a point-like flow passage, the point-like flow passage consists of unconnected lug bosses raised towards the front side of the monopolar plates, the back sides of the lug bosses are provided with steel pits, the steel pit on the back side of the lug boss on the cathode monopolar plate is staggered with the steel pit on the back side of the lug boss on the anode monopolar plate, and the front part and the back part of the steel pits are overlapped relatively to form continuous water flow distribution flow passages which are connected in series. The proton exchange membrane fuel cell metal bipolar plate has the advantages of thin thickness for the manufactured bipolar plate, strict separation of fluid, good fluid distribution, light weight, simple processing and low processing cost; besides, the bipolar plate has high effective utilization area and good fluid resistance distribution evenness, and can satisfy the needs of different battery heat exchanges.

The invention belongs to the technical field of semiconductor materials, and relates to a Ge/Si1-xGex super-lattice structure and preparation thereof. The high quality strain Ge/Si1-xGex super-lattice structure comprises a Si substrate, and a Si0.2Ge0.8 virtual substrate layer, a B-doped Si0.2Ge0.8 epitaxial layer, a Si0.2Ge0.8 blocking layer, a Ge/Si1-xGex super-lattice layer, a P-doped Si0.2Ge0.8 epitaxial layer, a Si0.2Ge0.8 blocking layer and a Si protective layer sequentially and epitaxially grown on the Si substrate, wherein x is more than or equal to 0.6 and less than or equal to 0.7. The epitaxial layers are sequentially grown on the Si substrate by adopting a reduced pressure chemical vapor deposition method; the obtained super-lattice structure has the properties of low dislocation defect density, low thickness and flat interface/surface, and the Ge/Si1-xGex super-lattice is in a strain state; and the super-lattice structure has high quality and is particularly suitable for manufacturing silicon-based laser devices and waveguide modulators.

This invention relates to a gas diffusion layer used in proton exchange film fuel cells and its preparation method, in which, the gas diffusion layer includes a multihole supporting layer and a microhole layer, the multihole supporting layer is a net and porous structure, the microhole layer is composited on the surface of the porous supporting layer closing to the catalyzed layer and covers the surface of the large hole and fiber dense region of the supporting layer uniformly but not penerates into the inside of the supporting layer, which applies a drying method to prepare a gas diffusion layer used in proton exchange membrane fuel cells, and polymr 1 and 2 containing FI is either a same kind or different, and the hydrophile/hydrophobic degree of the two layers is adjustable, so the gas diffusion layer structure is matched with the running condition of the fuel cell and discharges water more easily.

The present invention facilitates semiconductor fabrication by providing methods of fabrication that selectively form high-k dielectric layers within NMOS regions. An I/O dielectric layer is formed in core and I/O regions of a semiconductor device (506). The I/O dielectric layer is removed (508) from the core region of the device. A core dielectric layer is formed in the core region (510). A barrier layer is deposited and patterned to expose the NMOS devices of the core region (512). The core dielectric layer is removed from the core NMOS devices (514). A high-k dielectric layer is formed (514) over the core and I/O regions. Then, the high-k dielectric layer is removed (512) from PMOS regions/devices of the core region and the NMOS and PMOS regions/devices of the I/O region.

The invention relates to a method for preparing a TiAl alloy plate by argon atomization in powder metallurgy. The method comprises the following steps of: reducing the content of inclusions in TiAl alloy powders by purity smelting in a cold-wall crucible and high-purity argon atomization; performing hot isostatic pressure compaction on the high-purity prealloy powder which is atomized by pure argon under such conditions that the temperature is 1100 to 1300 DEG C, the pressure is 140 to 200 MPa and the compaction time is 2 to 4 hours; removing coatings of the alloy blank after hot isostatic pressure compaction and then performing surface treatment and coating; heating alloy and rolling at a high temperature; and removing coatings to obtain a powder TiAl alloy plate. The plate has the advantages of uniform deformation, good surface quality, fine and uniform texture, low oxide and impurity contents, small thickness, good overall mechanical property and high quality and reliability. The method solves the key problems in development and application of TiAl alloy powder-metallurgy plates, and provides a technical support for innovation and progress of civil industry and aerospace industry.

The invention discloses a production process for rolling a light gauge aluminum foil, which comprises the following steps of: performing rough rolling, wherein the reduction per pass of the rough rolling is 0.3mm to 0.14mm to 0.07mm to 0.038mm; performing intermediate rolling, wherein the reduction per pass of the intermediate rolling is 0.038mm to 0.013mm; performing double rolling; performing intermediate annealing; cleaning a stock, namely performing surface cleaning on the aluminum foil stock by using rolling oil at a finish rolling inlet; performing finish rolling, wherein the reduction per pass of the finish rolling is 0.013mm to 0.005mm; slitting; annealing a semi-finished product; and packaging and warehousing. By adding the intermediate annealing and rolling oil cleaning processes for the aluminum foil, the mechanical property of the aluminum foil is improved while the thickness of the aluminum foil is reduced, and the breakage condition and a pinhole number in the rolling process are reduced.

The invention discloses a packaging structure and a packaging method for a fingerprint recognition chip. The packaging structure comprises a substrate, a sensing chip, a plurality of wires and a plastic package layer. The substrate is provided with a first surface, and the first surface of the substrate is provided with a first welding pad layer. The sensing chip is located on the first surface of the substrate and provided with a first surface and a second surface, the second surface of the sensing chip is located on the first surface of the substrate, the first surface of the sensing chip is provided with a sensing area and a peripheral area, and the surface of the portion, in the peripheral area, of the sensing chip is provided with a second welding pad layer. The two ends of the wires are electrically connected with the first welding pad layer and the second welding pad layer respectively, the wires have top points with the maximum distance to the surface of the substrate, and a first distance is reserved between the top points and the first surface of the sensing chip. The plastic package layer is located on the surface of the substrate and the surface of the sensing chip and surrounds the wires and the sensing chip, and a second distance is reserved between the surface of the plastic package layer and the first surface of the sensing chip and is larger than the first distance. According to the packaging structure, the requirement for the sensitivity of the sensing chip is lowered, and application is wider.