701 results about "Infrared detector" patented technology

The invention relates to the technical field of gas leakage detection, and discloses an infrared imaging radiation correction method and system for gas leakage detection, and the method comprises the steps: obtaining the distribution data of dark current noise, and the mapping relation parameters of an image gray value and a radiation brightness value; acquiring infrared radiation of the gas leakage scene by using an infrared detector to obtain an original infrared image; based on the distribution data of the dark current noise, performing pixel-by-pixel compensation on the original infrared image to generate an infrared image after dark current correction; extracting the radiation intensity distribution of the infrared image after dark current correction, calibrating the radiation value of each pixel in the infrared image based on the mapping relation parameter between the image gray value and the absolute radiation brightness value, converting the image gray value into the absolute radiation brightness value, and generating the infrared image after radiation calibration; and outputting an infrared image after radiometric calibration for subsequent gas leakage area identification and feature analysis. According to the invention, a high-quality and quantifiable radiation quantification image can be output.

The invention discloses a goat oestrus monitoring system. The goat oestrus monitoring system comprises a multi-mode infrared thermal imaging data acquisition sensing unit and a multi-dimensional environment parameter collaborative real-time sensing unit. A goat body surface temperature field and a multispectral image are acquired through an uncooled vanadium oxide focal plane array infrared detector and a multiband spectral imaging module, environmental parameters are acquired in combination with a distributed sensing network, and a motion track is recorded through depth vision and inertia measurement. The heterogeneous multi-core data processing central unit is used for preprocessing, storing and preliminarily analyzing multi-source data, the feature extraction unit is used for mining multi-dimensional features, and the intelligent decision judgment unit is used for judging an estrus state by combining a deep neural network and dynamic threshold adjustment. The system integrates multiple technologies, can accurately monitor the oestrus state of the goats in real time, provides data support for scientific breeding, and improves breeding benefits.

The invention relates to the technical field of PVC film processing detection, in particular to an intelligent PVC film flaw detection device which comprises a base, a controller, winding roller sets, a support, an infrared detector, a supporting column, an electric push rod and a marking instrument, the controller for controlling operation of all electrical components is installed on the side portion of the base, the winding roller sets are installed on the two sides of the upper portion of the base, and the infrared detector is installed on the support. A support is arranged in the middle of the upper portion of the base, a supporting column is arranged on the rear portion of the upper portion of the base, an electric push rod with a downward telescopic end is installed on the upper portion of the supporting column, a marking instrument is arranged at the telescopic end of the electric push rod, and an edge positioning set for assisting alignment of the edges of PVC films is arranged in the middle of the base. According to the invention, through automatic traction of the film by the winding roller group, dynamic deviation correction by the edge positioning group, real-time scanning by the infrared detector and accurate marking by the marking instrument, unmanned detection of the whole process from feeding to discharging is realized, and the detection efficiency is improved.

The invention provides a preparation method of a barrier type antimonide infrared detector. The preparation method comprises the following steps: selecting a gallium antimonide substrate; a gallium antimonide buffer layer, an indium arsenide heavily-doped layer, a class II superlattice absorption layer and an aluminum-arsenic-antimony barrier layer are sequentially grown on the substrate in an epitaxial mode through a molecular beam epitaxy method; mechanically stripping the hexagonal boron nitride two-dimensional material, and transferring the stripped hexagonal boron nitride to the aluminum-arsenic-antimony barrier layer to form a Van der Waals heterojunction and composite barrier layer structure; depositing electrodes by using an ultraviolet lithography technology and a thermal evaporation mode to form one electrode arranged on the gallium antimonide buffer layer and the other electrode arranged on the boron nitride; a large-numerical-aperture micro-lens array is processed on a substrate, and the micro-lens array is composed of gallium antimonide cylinders with a phase modulation function; therefore, the antimonide medium-wave infrared detector with the composite barrier layer can be formed, the quantum efficiency is improved, the order of magnitude of dark current is reduced, and room-temperature medium-wave infrared detection can be realized.

The invention discloses wafer defect detection equipment for semiconductor production, relates to the field of wafer detection, and solves the problem that the wafer clamping force is too large when an existing detection device turns over a wafer, the wafer defect detection equipment comprises a detection platform and a supporting plate, a mounting disc is arranged on the outer side of the supporting plate, an L-shaped support is arranged on the outer side of the mounting disc, and the L-shaped support is arranged on the outer side of the mounting disc. An infrared detector is mounted at one end of the L-shaped bracket, a mounting frame is mounted at the top of the detection platform, a detection box is mounted at the top of the mounting frame, and a transparent placement plate is arranged on the inner side of the detection box; the detection mechanism is used for carrying out double-sided detection on the wafer on the transparent placing plate, and the detection mechanism is mounted on the inner side of the detection box; through the detection mechanism, the top and the bottom of the wafer can be detected without overturning the wafer, contact with the wafer during detection is reduced, the problem that the clamping force of a traditional detection device on the wafer is too large is solved, wafer damage is prevented, and therefore the safe and multi-face detection effect is achieved.

A cover for an infrared detector and a method of fabricating the cover are disclosed. The cover comprises a wafer comprising a material such as silicon that transmits infrared radiation. The wafer has a first surface and a second surface opposite the first surface. An antireflective region is formed in the wafer to enhance transmission of infrared radiation through the cover. The antireflective region comprises a first plurality of antireflective elements such as moth-eyes formed in the first surface. The first plurality of antireflective elements are sized and shaped and arranged relative to one another to form a region of graded refractive index at the first surface so as to reduce the amount of infrared radiation reflected by the cover at the antireflective region. The cover comprises a wall extending from the first surface and surrounding the antireflective region. The wall comprises a plurality of layers of material deposited on the wafer so that, when the cover is bonded to a sensor substrate via the wall, a cavity is formed that encapsulates a sensor region of the sensor substrate. The depth of the cavity may be adjusted by depositing the plurality of layers of material with a combined thickness equivalent to the desired depth of the cavity. A second plurality of antireflective elements may be formed in the second surface to enhance the antireflective properties of the antireflective region.

The invention discloses a mechanical arm clamping device for elbow production, and relates to the technical field of mechanical automation equipment, the mechanical arm clamping device comprises a base frame, a mechanical arm main body, an adjusting mechanism and a clamping mechanism; the telescopic end of the adjusting mechanism is fixedly connected with a clamping mechanism; the clamping mechanism comprises a cross beam plate, a moving plate, an annular frame and an infrared detector; and two groups of embedding grooves are formed in the bottom of the cross beam plate. According to the device, through cooperation of multiple assemblies, longitudinal angle adjustment is completed; the cylinder drives the extension plate to realize longitudinal depth adjustment of the magnetic seat. According to the design, the position and the angle of the clamping mechanism can be flexibly adjusted according to the bending degree of the bent pipe, U-shaped, S-shaped and other special-shaped bent pipes can be easily dealt with, the + / -90-degree swing limitation of a conventional rotating mechanism is broken through, and manual secondary positioning is not needed. And meanwhile, the clamping position and angle are accurately adjusted, the problem that the attaching error of a traditional clamping jaw is large is solved, it is ensured that the relative position of the clamping jaw and the bent pipe is unchanged, and the clamping stability and precision are improved.

The invention discloses an infrared polarization detector structure and a preparation method, and relates to the photoelectric detection technology, and the infrared polarization detector structure comprises a reading circuit (1) which is in inverted connection with an infrared material (2); one face of the infrared material (2) is connected with the reading circuit (1), array type polarization grating structures (4) are arranged on the other face of the infrared material (2), any polarization grating structure (4) forms a pixel, isolation groove structures (9) are arranged between the pixels on the infrared material (2), and the isolation groove structures (9) are filled with infrared isolation materials. According to the infrared polarization detector structure provided by the embodiment of the invention, the crosstalk of an infrared detector can be reduced, and the extinction ratio of the infrared polarization detector is improved.

The invention relates to a preparation method of a lead selenide room-temperature medium-wave infrared detector, which comprises the following steps of: (1) depositing a lead selenide film layer on a substrate by adopting a magnetron sputtering technology and taking oxygen as reaction gas; (2) placing the lead selenide film in a horizontal tube furnace, and realizing high-temperature oxidation in normal-pressure pure oxygen; and (3) putting the lead selenide film into a vertical tube furnace, and realizing high-temperature iodination in a normal-pressure environment. The lead selenide thin film is prepared through the magnetron sputtering technology, compared with chemical bath deposition, the quality of the thin film is effectively improved, and large-area and high-uniformity thin film preparation is achieved; the magnetron sputtering film is subjected to high-temperature oxidation-iodination treatment, the magnetron sputtering film has excellent photoresponse to infrared light, and the sensitization technology is specific and clear and good in repeatability; the sensitized lead selenide thin film layer and the top electrode form the photoconductive detector, the specific detection rate of the device is 7.6 * 10 < 9 > Jones at 4.3 microns at the room temperature of a medium-wave infrared band, and the performance is excellent.

The invention belongs to the technical field of power transmission line on-line monitoring, and particularly relates to a power transmission line bird sound and bird damage early warning identification and active expelling method and system based on multi-modal perception, and the method comprises the steps: employing a multi-modal perception unit to monitor the surrounding environment of a power transmission line tower, and enabling a microwave infrared detector to detect a moving object, activating a holder and a voiceprint sensing module, and collecting image and voiceprint data; comprehensively judging whether a target is a threatening bird or not through a multi-modal data fusion decision module in combination with infrared microwave features, a voiceprint comparison result and an image recognition result; if the bird is judged to be a threatening bird, controlling an audible and visual alarm module and / or a flash lamp module to execute a repelling action according to a current period silence strategy; monitoring bird behaviors in real time, and if the birds fly away from the target area, terminating the repelling action and recovering the low-power-consumption standby mode; and uploading the image and voiceprint data in the expelling process to a server, optimizing the recognition model and updating the expelling strategy.

This invention discloses an enhanced lead-salt uncooled mid-wave infrared detector and its fabrication method, relating to the field of photoelectric detection technology. The detector comprises: a substrate, a reflective layer, a dielectric layer, a microstructure array layer, a lead-salt sensitive layer, a metal electrode layer, and a passivation layer. The fabrication method includes: fabricating a metal reflective layer on the substrate surface; fabricating a resonant cavity layer on the reflective layer; fabricating a microstructure array layer on the resonant cavity layer; fabricating a lead-salt sensitive layer on the microstructure array layer; sensitizing the lead-salt sensitive layer; fabricating a metal electrode on the lead-salt sensitive layer; and fabricating a passivation layer on the lead-salt sensitive layer and the metal electrode. The beneficial effect of this invention is that it combines the LSPR effect of the resonant cavity and the artificial plasmon resonance array (i.e., the metal microstructure array), which can effectively enhance the mid-wave infrared radiation absorption of the device. It has the characteristics of high performance, high sensitivity, and high stability, and is expected to be widely used in the field of mid-wave infrared detection.

The invention discloses an infrared four-waveband composite annular aperture folded imaging optical system, belongs to the technical field of optical catadioptric optical paths, and aims to solve the problem that 1550nm / 1064nm dual-laser and medium-wave / long-wave infrared four-waveband composite detection is difficult to realize at the same time in the conventional annular aperture imaging technology. The system comprises a primary mirror, a secondary mirror, a 1064nm laser spot correction mirror, a 1550nm laser spot correction mirror, a 1064nm laser spectroscope, a 1550nm laser spectroscope, a broadband infrared detector, a 1550nm laser detector and a 1064nm laser detector. And high-performance common-aperture composite detection of 1064nm / 1550nm dual laser and medium-wave / long-wave infrared four wavebands is realized through a multi-stage light splitting mechanism. The limitation that a traditional annular aperture system is single in wave band is broken through, and the all-weather sensing and target recognition capability of the system in a complex environment is remarkably improved.

The present application discloses a pixel-level packaging structure for an uncooled infrared detector and a manufacturing method thereof, comprising an integrated circuit substrate and a pixel device disposed on the upper surface of the integrated circuit substrate; the pixel device comprises a pixel unit and an air-intake unit disposed on one side of the pixel unit, the air-intake unit comprising a getter layer disposed on the upper surface of the integrated circuit substrate, a support layer, and a sealing layer disposed on the upper surface of the support layer; the cavity in the air-intake unit is connected to the cavity in the pixel unit; or the pixel device comprises a getter layer and a reflective layer disposed on the upper surface of the integrated circuit substrate, and an infrared sensor unit disposed above and corresponding to the reflective layer. The pixel device comprises a pixel unit and an air-intake unit disposed on one side of the pixel unit, the getter layer not being disposed in the pixel unit; or the getter layer in the pixel device does not correspond to the infrared sensor unit, thereby avoiding the influence of the getter layer on the infrared sensor unit and improving the performance of the uncooled infrared detector.

The invention discloses an uncooled infrared detector and a manufacturing method thereof, and relates to the technical field of detectors, the uncooled infrared detector comprises a readout circuit, the readout circuit is provided with a micro-bridge structure and an umbrella-shaped absorption structure, the micro-bridge structure comprises a metal electrode, a reflecting layer, a first sacrificial layer, a first supporting layer, an electrode layer and a thermosensitive layer, and the electrode layer is arranged on the supporting layer. The thermosensitive layer is arranged on the electrode layer, and the first passivation layer is arranged at the top of the microbridge structure. By adopting the thermosensitive layer with a three-layer structure of vanadium oxide, vanadium and vanadium oxide and optimizing sputtering process parameters, the sensitivity and the stability of the thermosensitive film are improved, secondly, due to the design of an umbrella-shaped absorption structure and the synergistic effect of the second sacrificial layer, the second supporting layer and the absorption layer, the absorption rate and the filling rate of an infrared pixel are improved, and the stability of the film is improved. Not only is the absorption efficiency of infrared radiation enhanced, but also a heat conduction path is optimized, so that the response speed and the signal-to-noise ratio of the detector are improved.

The present invention discloses a wafer defect detection device for semiconductor production, which relates to the field of wafer detection and solves the problem that the existing detection device has too large a clamping force on the wafer when turning the wafer over. It includes: a detection platform and a support plate. An installation disk is arranged on the outside of the support plate. An L-shaped bracket is arranged on the outside of the installation disk. An infrared detector is installed at one end of the L-shaped bracket. An installation frame is installed on the top of the detection platform. A detection box is installed on the top of the installation frame. A transparent placement plate is arranged inside the detection box; it further includes: a detection mechanism for double-sided detection of the wafer on the transparent placement plate, and the detection mechanism is installed inside the detection box; through the detection mechanism of the present invention, it is possible to detect the top and bottom of the wafer without flipping the wafer, reduce the contact with the wafer during detection, solve the problem that the traditional detection device has too large a clamping force on the wafer, prevent the wafer from being damaged, and thus achieve the effect of safe and multi-sided detection.

The utility model belongs to the technical field of conveyer belt calendering equipment, and discloses an automatic trimming knife device for a conveyer belt calender. The two servo motors respectively drive the two sets of ball screws to respectively drive the cutters to move, and the cutters are aligned with the edges of the canvas; the two sets of infrared detectors are arranged on one side of the roller; the infrared detector is connected with the servo controller, and the servo controller is connected to the servo motor; the linear displacement sensor measures the moving value of the cutter. The servo motor is connected with the ball screw through a key and a coupler to transmit torque; the other end of the flange sleeve is fixed with the left mounting bracket; the two ends of the ball screw are supported and mounted in the left mounting bracket and the right mounting bracket through bearings respectively; and a nut on the ball screw is connected with a cutter. According to the device, the cutter always tracks the detection position constantly, it is guaranteed that the tracking position of the cutter is consistent with the position of the detected canvas, and therefore it is guaranteed that the edge of a cut film completely coincides with the edge of the canvas.

The invention relates to the technical field of semiconductors, in particular to a superlattice multispectral infrared detector which comprises a substrate and a device structure, the device structure is arranged on the substrate and comprises a buffer layer, a first ohmic contact layer, a long wave absorption layer, an electron barrier layer, a medium wave absorption layer and a second ohmic contact layer, and the buffer layer is arranged on the substrate; the first ohmic contact layer is formed between the buffer layer and the long-wave absorption layer, the electron barrier layer is arranged on the surface, away from the first ohmic contact layer, of the long-wave absorption layer, and the medium-wave absorption layer is arranged between the electron barrier layer and the second ohmic contact layer. In this way, the technical problems that in the prior art, due to the extremely-low-temperature refrigeration technology, the preparation cost of the detector is increased, and the size is increased are solved.

The invention relates to the technical field of low-temperature infrared radiation detection, and provides low-temperature infrared radiation detection equipment, which comprises a vacuum cold box, an infrared detection device, a control system and a signal processing system, and is characterized in that the infrared detection device comprises an infrared window sheet, an optical shutter, an optical lens, an optical chopper and an infrared detector; the optical chopper adjusts an infrared radiation signal emitted by a target object to a predetermined frequency, and the infrared detector receives the infrared radiation signal and converts the infrared radiation signal into an electric signal; the signal processing system comprises a pre-amplifier, a lock-in amplifier, a signal processing unit and a display unit, the pre-amplifier amplifies the electric signals output by the infrared detector, and the lock-in amplifier extracts signals corresponding to the preset frequency from the electric signals amplified by the pre-amplifier and amplifies the signals. Through the arrangement, the optical chopper, the pre-amplifier and the lock-in amplifier are combined, so that the measurement precision of infrared detection is effectively improved.

The invention provides an etching method of a double-color second-class superlattice infrared detector, and belongs to the technical field of chip manufacturing. The method comprises the following steps: providing a double-color second-class superlattice infrared detector, and forming a photoresist mask on the surface of the double-color second-class superlattice infrared detector; under the condition that the ratio of the longitudinal etching rate to the transverse etching rate is not less than 5: 1, performing dry etching on the surface of the double-color second-class superlattice infrared detector to obtain an initial mesa structure; the initial mesa structure is subjected to wet etching, a middle mesa structure is obtained, the wet etching time is smaller than or equal to 2 min, and the wet etching temperature is smaller than or equal to 10 DEG C; and post-processing the middle table-board structure to obtain the table-board structure. Through organic combination of a high-anisotropy forming effect of dry etching and a low-damage repairing effect of wet etching, the low surface damage characteristic is considered while high aspect ratio etching is realized, the dark current of the device is fundamentally reduced, and the intrinsic detection performance of the device is improved.

The invention relates to a small-sized light-weight large-target-surface infrared athermalization optical system, and the optical system consists of a first meniscus positive lens, a meniscus negative lens, a second meniscus positive lens and a third meniscus positive lens which are sequentially and coaxially arranged from an object side to an image side, the second meniscus positive lens and the third meniscus positive lens are the same lens, the first meniscus positive lens, the second meniscus positive lens and the third meniscus positive lens are all made of chalcogenide glass IRG206, and the optical system ensures that edge imaging is clear and the image surface diameter reaches 20mm through optimal arrangement of focal power and optical materials of all the lenses and intervals among all the lenses, so that the image quality is improved. The long-wave infrared imaging device can adapt to a 1280 * 1024 array and a long-wave uncooled infrared detector with the pixel size of 12 microns, and has the advantages of high imaging quality, small size and light weight.

The invention discloses an infrared imaging system and method, relates to the field of image generation, and is used for reducing the error of a system structure on an infrared measurement result. Electromagnetic waves radiated by a target are transmitted to the infrared detector through the optical lens; an infrared detector is used for capturing electromagnetic waves and transmitting the electromagnetic waves to a signal processing circuit for energy conversion; transmitting the grey-scale map obtained by conversion to the image processing circuit by using the signal processing circuit; performing infrared imaging according to the energy value of the grey-scale map by using an image processing circuit, and performing temperature compensation on an infrared image in real time based on the environment temperature; and the display unit is used for displaying the infrared image and displaying the temperature information of the searched target points, lines and areas. According to the invention, the temperature detection precision is improved, and real-time early warning can be carried out.

An infrared detector includes a tuning fork resonator comprising an mechanical-to-electrical transduction mechanism; a metamaterial absorber residing on at least one side of the tuning fork resonator, the metamaterial absorber comprising at least a material layer with subwavelength inclusions; and a signal processing circuit to translate the electrical signal into an amplitude of mechanical motion of the tuning fork.

The utility model provides a spectral responsivity calibration device, and relates to the technical field of optical metrology. The device comprises a light source module, a light path module, a detection module, a control system and a packaging box, wherein the control system is respectively in communication connection with a light source, a light path and the detection module; the light source module is a direct-current voltage-stabilizing light source combined by a deuterium lamp and a halogen lamp; the light path module comprises an adjustable grating, a monochromator, a reflector and a lock-in amplifier, and the light path module is of a double-light-path design; the detection module comprises a reference detector, a standard detector and a detected detector. The standard detector is composed of a standard silicon detector, a standard indium gallium arsenic detector, a standard germanium detector and a standard lead sulfide detector. The device can be used for calibrating the spectral responsivity of ultraviolet, visible and near infrared detectors, and can be used for measuring and calibrating the spectral responsivity of the detected detector through a comparison method by arranging standard detectors such as silicon, germanium, indium gallium arsenic, lead sulfide and the like.

The invention discloses a self-adaptive submarine pipeline cleaning machine which comprises a flexible body, a cleaning mechanism, a propelling mechanism and an infrared detector, the cleaning mechanism is arranged on the outer side of the flexible body, the infrared detector is arranged at the front end of the flexible body, and the propelling mechanism is arranged at the rear end of the flexible body. The flexible body comprises a flexible air bag, a pneumatic actuator and a plurality of distributed sensing units, the cleaning mechanism comprises a circumferential driving assembly and a plurality of flexible cleaning brushes, and the propelling mechanism comprises an annular mounting seat and a plurality of crawler propelling units; the infrared detector arranged at the front end of the flexible body is used for acquiring the inner diameter data of the pipeline in real time, and the pneumatic actuator is used for filling or sucking the flexible air bag according to the measurement result, so that the flexible air bag is adjusted to be attached to the inner wall of the pipeline; and the contact stress distribution is monitored in real time through the distributed sensing unit arranged on the outer side of the flexible air bag, so that the pressure of the flexible cleaning brush on the pipe wall is dynamically adjusted, the cleaning effect is guaranteed, and damage caused by excessive extrusion is avoided.

The invention discloses a non-spectral infrared gas analysis system, which relates to the technical field of gas analysis, and comprises an infrared absorption cell used for receiving gas to be detected; the black-body radiation infrared light source is used for emitting infrared light to the infrared absorption cell; the gas to be detected is used for selectively absorbing infrared light; the light source driving modulation circuit is used for driving a black-body radiation infrared light source through a resistor of which the resistance value dynamically changes along with the temperature; the infrared detector is used for receiving the infrared light absorbed by the gas to be detected; the signal processing module is used for detecting the intensity change of the infrared light before the infrared light is absorbed by the gas to be detected and the intensity change of the infrared light after the infrared light is absorbed by the gas to be detected, converting the intensity change into an electric signal, and processing the electric signal to obtain a digital signal; and the controller is used for converting the digital signal into the concentration of the gas to be detected. According to the non-spectral infrared gas analysis system, a black-body radiation infrared light source is adopted, and the power consumption is reduced through a rapid electric modulation function.

The invention relates to the technical field of surface temperature measurement based on an infrared radiation principle, and discloses a non-contact surface temperature measurement device which realizes surface temperature measurement through cooperation of a plurality of components. The optical system is located in front of the infrared detector, the field angle is determined, infrared radiation is focused, and a 3D printing black sealing shell of the optical system is rainproof and windproof. The infrared radiation detector of the MLX90614 chip converts infrared energy into a voltage signal and processes data, the data is sent to the main processor through the signal conditioning circuit for analog-to-digital conversion and other operations, and the sensor is endowed with digital and intelligent characteristics. The communication module comprises an RS-232 serial port and a ZigBee wireless communication module and is used for data transmission and connection with an upper computer, and the state monitoring module monitors the work of the processor. Hardware design is completed by using an embedded system and a ZigBee technology, software design is realized by IAR and Z-Stack protocol stacks, and the surface temperature can be accurately measured. The device also has two-way communication and online upgrading functions, the emissivity and the distance are corrected through an algorithm, the efficiency is improved, the standard requirements are met, and meteorological observation and ground temperature measurement are assisted.

The invention discloses a radiation intensity measurement method of an infrared radiation simulation source system, and belongs to the technical field of infrared radiation characteristic measurement. The method comprises the following steps: firstly, performing radiometric calibration operation on an infrared radiation simulation source system and an infrared detector; a medium-wave infrared optical system and an infrared detector are used for receiving infrared radiation signals, and continuous radiation is converted into alternating signals through modulation of an optical chopper, so that the measurement signal-to-noise ratio is increased. Collected alternating signals are processed by the filtering gain amplification circuit so as to enhance signal stability. And then dynamic denoising and state estimation are carried out on measured data by adopting a Kalman filtering algorithm, and nonlinear error compensation is carried out in combination with a medium-wave infrared radiation coefficient correction algorithm, so that a high-precision radiation intensity correction coefficient is obtained. Compared with a traditional method, the self-adaptive filtering and radiation intensity correction technology is combined, the measurement precision and the real-time performance are improved, and the method can be widely applied to the fields of infrared optical testing, target characteristic analysis and radiation measurement.

The invention discloses a superlattice infrared detector electrode preparation method and an electrode hole. The method comprises the following steps: spin-coating a layer of photoresist on the surface of a superlattice material as an etching mask layer, and preparing an area array pattern; using ICP dry etching equipment to transfer the area array pattern to the superlattice material to form a mesa structure; depositing a passivation layer on the surface of the superlattice mesa by using plasma enhanced chemical vapor deposition equipment; spin-coating another layer of photoresist as an etching mask layer and preparing an electrode hole pattern; by controlling parameters of ICP dry etching equipment, transferring an electrode hole pattern to the superlattice mesa to prepare an electrode hole of which the side wall has a set inclination angle; spin-coating a layer of photoresist as a mask layer and preparing an electrode pattern; and sputtering a metallization system in an electrode hole area and completing electrode preparation through a stripping process. By controlling the etching inclination angle of the side wall of the electrode hole, the prepared electrode is good in continuous covering effect, so that the dark current of the superlattice device is reduced, and the performance and the stability of the device are improved.

The invention relates to the technical field of smart home, and particularly discloses an intelligent alarm method and system based on an infrared thermal imaging technology, and the method comprises the steps: collecting an infrared thermal image sequence of a home environment based on an infrared detector; performing threshold segmentation on each frame of image in the infrared thermal image sequence based on a preset temperature threshold to extract a high-temperature region image sequence; forming a cross-frame high-temperature region tracking trajectory between continuous frames of the high-temperature region image sequence by using a target tracking algorithm; obtaining time sequence change parameter information of each high-temperature region according to the high-temperature region tracking trajectory and the high-temperature region image sequence; distinguishing the target type of each high-temperature area according to the time sequence change parameter information; if the high-temperature area of the biological target type exists, generating an alarm signal; the method has the capability of accurately distinguishing the biological target and the sunlight target, the reliability and accuracy of detection are effectively improved, and the false alarm rate can be effectively reduced.

This invention discloses a tunable broadband photodetector based on a Schottky junction, comprising: an N-type silicon substrate, a gate ferroelectric dielectric, a gate electrode, a source electrode, and a drain electrode; the source electrode, gate ferroelectric dielectric, and drain electrode are sequentially disposed on the N-type silicon substrate, and the gate electrode is disposed on the gate ferroelectric dielectric; the gate ferroelectric dielectric is made of hafnium oxide, a ferroelectric material, and the gate ferroelectric dielectric and the gate electrode together constitute a ferroelectric gate; the gate electrode is made of a transparent metal oxide. This invention utilizes silicon CMOS manufacturing technology and a simple device structure, greatly reducing the fabrication difficulty of silicon-based infrared detectors, and by leveraging the characteristic that the polarization intensity of ferroelectrics weakens under infrared light, extends the detection long-wavelength limit of silicon-based infrared detectors to the near-infrared band. This invention also discloses a method for fabricating and applying a tunable broadband photodetector based on a Schottky junction.