544 results about "Infrared detector" patented technology

The invention relates to the technical field of gas leakage detection, and discloses an infrared imaging radiation correction method and system for gas leakage detection, and the method comprises the steps: obtaining the distribution data of dark current noise, and the mapping relation parameters of an image gray value and a radiation brightness value; acquiring infrared radiation of the gas leakage scene by using an infrared detector to obtain an original infrared image; based on the distribution data of the dark current noise, performing pixel-by-pixel compensation on the original infrared image to generate an infrared image after dark current correction; extracting the radiation intensity distribution of the infrared image after dark current correction, calibrating the radiation value of each pixel in the infrared image based on the mapping relation parameter between the image gray value and the absolute radiation brightness value, converting the image gray value into the absolute radiation brightness value, and generating the infrared image after radiation calibration; and outputting an infrared image after radiometric calibration for subsequent gas leakage area identification and feature analysis. According to the invention, a high-quality and quantifiable radiation quantification image can be output.

The invention provides a preparation method of a barrier type antimonide infrared detector. The preparation method comprises the following steps: selecting a gallium antimonide substrate; a gallium antimonide buffer layer, an indium arsenide heavily-doped layer, a class II superlattice absorption layer and an aluminum-arsenic-antimony barrier layer are sequentially grown on the substrate in an epitaxial mode through a molecular beam epitaxy method; mechanically stripping the hexagonal boron nitride two-dimensional material, and transferring the stripped hexagonal boron nitride to the aluminum-arsenic-antimony barrier layer to form a Van der Waals heterojunction and composite barrier layer structure; depositing electrodes by using an ultraviolet lithography technology and a thermal evaporation mode to form one electrode arranged on the gallium antimonide buffer layer and the other electrode arranged on the boron nitride; a large-numerical-aperture micro-lens array is processed on a substrate, and the micro-lens array is composed of gallium antimonide cylinders with a phase modulation function; therefore, the antimonide medium-wave infrared detector with the composite barrier layer can be formed, the quantum efficiency is improved, the order of magnitude of dark current is reduced, and room-temperature medium-wave infrared detection can be realized.

A cover for an infrared detector and a method of fabricating the cover are disclosed. The cover comprises a wafer comprising a material such as silicon that transmits infrared radiation. The wafer has a first surface and a second surface opposite the first surface. An antireflective region is formed in the wafer to enhance transmission of infrared radiation through the cover. The antireflective region comprises a first plurality of antireflective elements such as moth-eyes formed in the first surface. The first plurality of antireflective elements are sized and shaped and arranged relative to one another to form a region of graded refractive index at the first surface so as to reduce the amount of infrared radiation reflected by the cover at the antireflective region. The cover comprises a wall extending from the first surface and surrounding the antireflective region. The wall comprises a plurality of layers of material deposited on the wafer so that, when the cover is bonded to a sensor substrate via the wall, a cavity is formed that encapsulates a sensor region of the sensor substrate. The depth of the cavity may be adjusted by depositing the plurality of layers of material with a combined thickness equivalent to the desired depth of the cavity. A second plurality of antireflective elements may be formed in the second surface to enhance the antireflective properties of the antireflective region.

The invention relates to a preparation method of a lead selenide room-temperature medium-wave infrared detector, which comprises the following steps of: (1) depositing a lead selenide film layer on a substrate by adopting a magnetron sputtering technology and taking oxygen as reaction gas; (2) placing the lead selenide film in a horizontal tube furnace, and realizing high-temperature oxidation in normal-pressure pure oxygen; and (3) putting the lead selenide film into a vertical tube furnace, and realizing high-temperature iodination in a normal-pressure environment. The lead selenide thin film is prepared through the magnetron sputtering technology, compared with chemical bath deposition, the quality of the thin film is effectively improved, and large-area and high-uniformity thin film preparation is achieved; the magnetron sputtering film is subjected to high-temperature oxidation-iodination treatment, the magnetron sputtering film has excellent photoresponse to infrared light, and the sensitization technology is specific and clear and good in repeatability; the sensitized lead selenide thin film layer and the top electrode form the photoconductive detector, the specific detection rate of the device is 7.6 * 10 < 9 > Jones at 4.3 microns at the room temperature of a medium-wave infrared band, and the performance is excellent.

The invention belongs to the technical field of power transmission line on-line monitoring, and particularly relates to a power transmission line bird sound and bird damage early warning identification and active expelling method and system based on multi-modal perception, and the method comprises the steps: employing a multi-modal perception unit to monitor the surrounding environment of a power transmission line tower, and enabling a microwave infrared detector to detect a moving object, activating a holder and a voiceprint sensing module, and collecting image and voiceprint data; comprehensively judging whether a target is a threatening bird or not through a multi-modal data fusion decision module in combination with infrared microwave features, a voiceprint comparison result and an image recognition result; if the bird is judged to be a threatening bird, controlling an audible and visual alarm module and / or a flash lamp module to execute a repelling action according to a current period silence strategy; monitoring bird behaviors in real time, and if the birds fly away from the target area, terminating the repelling action and recovering the low-power-consumption standby mode; and uploading the image and voiceprint data in the expelling process to a server, optimizing the recognition model and updating the expelling strategy.

This invention discloses an enhanced lead-salt uncooled mid-wave infrared detector and its fabrication method, relating to the field of photoelectric detection technology. The detector comprises: a substrate, a reflective layer, a dielectric layer, a microstructure array layer, a lead-salt sensitive layer, a metal electrode layer, and a passivation layer. The fabrication method includes: fabricating a metal reflective layer on the substrate surface; fabricating a resonant cavity layer on the reflective layer; fabricating a microstructure array layer on the resonant cavity layer; fabricating a lead-salt sensitive layer on the microstructure array layer; sensitizing the lead-salt sensitive layer; fabricating a metal electrode on the lead-salt sensitive layer; and fabricating a passivation layer on the lead-salt sensitive layer and the metal electrode. The beneficial effect of this invention is that it combines the LSPR effect of the resonant cavity and the artificial plasmon resonance array (i.e., the metal microstructure array), which can effectively enhance the mid-wave infrared radiation absorption of the device. It has the characteristics of high performance, high sensitivity, and high stability, and is expected to be widely used in the field of mid-wave infrared detection.

The invention discloses an infrared four-waveband composite annular aperture folded imaging optical system, belongs to the technical field of optical catadioptric optical paths, and aims to solve the problem that 1550nm / 1064nm dual-laser and medium-wave / long-wave infrared four-waveband composite detection is difficult to realize at the same time in the conventional annular aperture imaging technology. The system comprises a primary mirror, a secondary mirror, a 1064nm laser spot correction mirror, a 1550nm laser spot correction mirror, a 1064nm laser spectroscope, a 1550nm laser spectroscope, a broadband infrared detector, a 1550nm laser detector and a 1064nm laser detector. And high-performance common-aperture composite detection of 1064nm / 1550nm dual laser and medium-wave / long-wave infrared four wavebands is realized through a multi-stage light splitting mechanism. The limitation that a traditional annular aperture system is single in wave band is broken through, and the all-weather sensing and target recognition capability of the system in a complex environment is remarkably improved.

The present application discloses a pixel-level packaging structure for an uncooled infrared detector and a manufacturing method thereof, comprising an integrated circuit substrate and a pixel device disposed on the upper surface of the integrated circuit substrate; the pixel device comprises a pixel unit and an air-intake unit disposed on one side of the pixel unit, the air-intake unit comprising a getter layer disposed on the upper surface of the integrated circuit substrate, a support layer, and a sealing layer disposed on the upper surface of the support layer; the cavity in the air-intake unit is connected to the cavity in the pixel unit; or the pixel device comprises a getter layer and a reflective layer disposed on the upper surface of the integrated circuit substrate, and an infrared sensor unit disposed above and corresponding to the reflective layer. The pixel device comprises a pixel unit and an air-intake unit disposed on one side of the pixel unit, the getter layer not being disposed in the pixel unit; or the getter layer in the pixel device does not correspond to the infrared sensor unit, thereby avoiding the influence of the getter layer on the infrared sensor unit and improving the performance of the uncooled infrared detector.

The invention discloses an uncooled infrared detector and a manufacturing method thereof, and relates to the technical field of detectors, the uncooled infrared detector comprises a readout circuit, the readout circuit is provided with a micro-bridge structure and an umbrella-shaped absorption structure, the micro-bridge structure comprises a metal electrode, a reflecting layer, a first sacrificial layer, a first supporting layer, an electrode layer and a thermosensitive layer, and the electrode layer is arranged on the supporting layer. The thermosensitive layer is arranged on the electrode layer, and the first passivation layer is arranged at the top of the microbridge structure. By adopting the thermosensitive layer with a three-layer structure of vanadium oxide, vanadium and vanadium oxide and optimizing sputtering process parameters, the sensitivity and the stability of the thermosensitive film are improved, secondly, due to the design of an umbrella-shaped absorption structure and the synergistic effect of the second sacrificial layer, the second supporting layer and the absorption layer, the absorption rate and the filling rate of an infrared pixel are improved, and the stability of the film is improved. Not only is the absorption efficiency of infrared radiation enhanced, but also a heat conduction path is optimized, so that the response speed and the signal-to-noise ratio of the detector are improved.

The utility model belongs to the technical field of conveyer belt calendering equipment, and discloses an automatic trimming knife device for a conveyer belt calender. The two servo motors respectively drive the two sets of ball screws to respectively drive the cutters to move, and the cutters are aligned with the edges of the canvas; the two sets of infrared detectors are arranged on one side of the roller; the infrared detector is connected with the servo controller, and the servo controller is connected to the servo motor; the linear displacement sensor measures the moving value of the cutter. The servo motor is connected with the ball screw through a key and a coupler to transmit torque; the other end of the flange sleeve is fixed with the left mounting bracket; the two ends of the ball screw are supported and mounted in the left mounting bracket and the right mounting bracket through bearings respectively; and a nut on the ball screw is connected with a cutter. According to the device, the cutter always tracks the detection position constantly, it is guaranteed that the tracking position of the cutter is consistent with the position of the detected canvas, and therefore it is guaranteed that the edge of a cut film completely coincides with the edge of the canvas.

The invention provides an etching method of a double-color second-class superlattice infrared detector, and belongs to the technical field of chip manufacturing. The method comprises the following steps: providing a double-color second-class superlattice infrared detector, and forming a photoresist mask on the surface of the double-color second-class superlattice infrared detector; under the condition that the ratio of the longitudinal etching rate to the transverse etching rate is not less than 5: 1, performing dry etching on the surface of the double-color second-class superlattice infrared detector to obtain an initial mesa structure; the initial mesa structure is subjected to wet etching, a middle mesa structure is obtained, the wet etching time is smaller than or equal to 2 min, and the wet etching temperature is smaller than or equal to 10 DEG C; and post-processing the middle table-board structure to obtain the table-board structure. Through organic combination of a high-anisotropy forming effect of dry etching and a low-damage repairing effect of wet etching, the low surface damage characteristic is considered while high aspect ratio etching is realized, the dark current of the device is fundamentally reduced, and the intrinsic detection performance of the device is improved.

The invention relates to a small-sized light-weight large-target-surface infrared athermalization optical system, and the optical system consists of a first meniscus positive lens, a meniscus negative lens, a second meniscus positive lens and a third meniscus positive lens which are sequentially and coaxially arranged from an object side to an image side, the second meniscus positive lens and the third meniscus positive lens are the same lens, the first meniscus positive lens, the second meniscus positive lens and the third meniscus positive lens are all made of chalcogenide glass IRG206, and the optical system ensures that edge imaging is clear and the image surface diameter reaches 20mm through optimal arrangement of focal power and optical materials of all the lenses and intervals among all the lenses, so that the image quality is improved. The long-wave infrared imaging device can adapt to a 1280 * 1024 array and a long-wave uncooled infrared detector with the pixel size of 12 microns, and has the advantages of high imaging quality, small size and light weight.

The invention discloses an infrared imaging system and method, relates to the field of image generation, and is used for reducing the error of a system structure on an infrared measurement result. Electromagnetic waves radiated by a target are transmitted to the infrared detector through the optical lens; an infrared detector is used for capturing electromagnetic waves and transmitting the electromagnetic waves to a signal processing circuit for energy conversion; transmitting the grey-scale map obtained by conversion to the image processing circuit by using the signal processing circuit; performing infrared imaging according to the energy value of the grey-scale map by using an image processing circuit, and performing temperature compensation on an infrared image in real time based on the environment temperature; and the display unit is used for displaying the infrared image and displaying the temperature information of the searched target points, lines and areas. According to the invention, the temperature detection precision is improved, and real-time early warning can be carried out.

An infrared detector includes a tuning fork resonator comprising an mechanical-to-electrical transduction mechanism; a metamaterial absorber residing on at least one side of the tuning fork resonator, the metamaterial absorber comprising at least a material layer with subwavelength inclusions; and a signal processing circuit to translate the electrical signal into an amplitude of mechanical motion of the tuning fork.

This invention discloses a tunable broadband photodetector based on a Schottky junction, comprising: an N-type silicon substrate, a gate ferroelectric dielectric, a gate electrode, a source electrode, and a drain electrode; the source electrode, gate ferroelectric dielectric, and drain electrode are sequentially disposed on the N-type silicon substrate, and the gate electrode is disposed on the gate ferroelectric dielectric; the gate ferroelectric dielectric is made of hafnium oxide, a ferroelectric material, and the gate ferroelectric dielectric and the gate electrode together constitute a ferroelectric gate; the gate electrode is made of a transparent metal oxide. This invention utilizes silicon CMOS manufacturing technology and a simple device structure, greatly reducing the fabrication difficulty of silicon-based infrared detectors, and by leveraging the characteristic that the polarization intensity of ferroelectrics weakens under infrared light, extends the detection long-wavelength limit of silicon-based infrared detectors to the near-infrared band. This invention also discloses a method for fabricating and applying a tunable broadband photodetector based on a Schottky junction.

The invention discloses a long-wave infrared detector based on electric field intensity distribution regulation and control and a preparation method, and relates to the technical field of semiconductors, the long-wave infrared detector comprises a substrate, a bottom contact layer, a hole barrier layer, an absorption layer, an electron barrier layer and a top contact layer which are sequentially arranged from bottom to top; wherein the bottom contact layer and the hole barrier layer adopt an InAs / GaSb / AlSb / GaSb superlattice structure; the absorption layer, the electron barrier layer and the top contact adopt an InAs / GaSb superlattice structure; the doping concentration of the absorption layer is greater than the doping concentration of the hole barrier layer and the electron barrier layer. The doping concentration of the absorption layer is set to be greater than that of the barrier layer, so that the width of a depletion region of the absorption layer is reduced, the depletion region deviates towards the barrier layer, the probability of SRH recombination is reduced, G-R current can be effectively inhibited, and the overall dark current level is reduced.

The utility model belongs to the technical field of LED display screen processing, and provides an LED measuring and calculating lamp bead coordinate point position repairing auxiliary device which comprises an infrared positioning assembly, a light source assembly and a light source assembly. The display assembly is detachably mounted on the rear side of the infrared positioning assembly; the clamping assembly is mounted on the infrared positioning assembly; the infrared positioning assembly comprises a jig body frame, two symmetrically-distributed movable auxiliary sliding rails are fixedly installed on the upper surface of the jig body frame, a transverse movable rail supporting frame is slidably connected to the two movable auxiliary sliding rails, and a movable longitudinal moving rail is slidably connected to the transverse movable rail supporting frame. An infrared detector is fixedly mounted at the bottom of the movable longitudinal moving rail; according to the utility model, alignment on the module can be automatically measured and calculated, and a defective machine and coordinates can be found out, so that the machine is repaired, the yield of the module can be effectively improved, the production efficiency is improved, and efficient identification of staff is helped.

The application provides an infrared absorption material based on doping regulation, a preparation method and an infrared detector. By introducing selenium atoms to replace tellurium atoms in a sodium gallium telluride material, the material is doped according to a doping ratio of 1:4 to 1:2 of atomic weight, the energy band structure and optical properties of the material are regulated, a new infrared absorption material is obtained, and the light absorption performance of the material in the infrared wave band is significantly improved. According to the component characteristics of the infrared absorption material, a specific preparation scheme is provided, the preparation is completed by grinding, secondary melting and annealing treatment of the set principle mass of sodium single substance, gallium single substance, tellurium single substance and selenium single substance, and the band gap and absorption intensity are accurately adjusted, and the symmetry and crystal stability of the material are also considered.

This application relates to the technical field of grain processing quality inspection, and in particular to a grain quality infrared image recognition equipment, which includes a housing with a turntable rotatably mounted inside the housing. A drive source is provided between the turntable and the housing, and multiple storage cylinders are arranged on the turntable. This utility model, through the annular layout design of the turntable carrying multiple storage cylinders, combined with the rotation control of the drive source, can realize multi-channel parallel detection of grain samples. When one storage cylinder is under the infrared detector for detection, other storage cylinders can simultaneously complete operations such as feeding, unloading, or vibrating and spreading, avoiding the "intermittent detection" drawback of traditional single-channel equipment. At the same time, the two discharge pipes, combined with the eccentric setting of the electric telescopic rod, can automatically switch the opening and closing state of the baffle according to the detection results, realizing dynamic sorting of qualified and unqualified grains without manual intervention, significantly improving the detection and sorting efficiency in large-scale grain processing scenarios.

The application discloses a multi-modal post-fusion invisibility method based on reinforcement learning, an electronic device and a medium, and the method comprises the following steps: acquiring a visible light image and an infrared image; generating an initial mask by an agent; setting the initial mask for the visible light image and the infrared image; inputting the visible light image with the mask into a visible light detector to obtain a confidence score of a target object in a visible light mode; inputting the infrared image with the mask into an infrared detector to obtain a confidence score of the target object in an infrared mode; performing post-fusion processing on the above scores to obtain a post-fusion confidence score; when the above three confidence scores are all less than a threshold value, the target object completes invisibility; otherwise, a reward function is calculated, reinforcement learning parameters are updated, an updated mask is generated by the agent, the above steps are repeated for iteration, and the above three confidence scores are all less than the threshold value.

The application relates to the technical field of photoelectric detection, and discloses an infrared detector and a preparation method thereof. The infrared detector comprises a substrate, a metal sensitive film, a light absorption enhancement structure and a current transmission structure. The light absorption enhancement structure comprises a Schottky junction. The Schottky junction is formed by etching an arrayed pattern on a silicon substrate, the arrayed pattern is filled with metal, the silicon substrate is in contact with the metal to form the Schottky junction, and the Schottky interface is subjected to roughening treatment to enhance hot electron absorption. The current transmission structure comprises a silicon substrate, a P-type conductive structure, an N-type conductive structure and a dielectric material. The current generated by the light absorption enhancement structure is led out from the P-type and N-type conductive structures. The Schottky interface is subjected to roughening treatment to enhance hot electron absorption, a back-illumination method is adopted, and the free path of hot electron transmission is shortened, so that the quantum efficiency of the detector is improved.

The present invention relates to the field of smart home technology, and specifically discloses an intelligent alarm method and system based on infrared thermal imaging technology, wherein the method includes the following steps: collecting an infrared thermal image sequence of a home environment based on an infrared detector; performing threshold segmentation on each frame image in the infrared thermal image sequence based on a preset temperature threshold to extract a high-temperature area image sequence; using a target tracking algorithm between consecutive frames of the high-temperature area image sequence to form a high-temperature area tracking trajectory across frames; obtaining time-series change parameter information of each high-temperature area based on the high-temperature area tracking trajectory and the high-temperature area image sequence; distinguishing the target type of each high-temperature area based on the time-series change parameter information; generating an alarm signal if there is a high-temperature area of ​​biological target type; the method has the ability to accurately distinguish between biological targets and sunlight targets, effectively improves the reliability and accuracy of detection, and can effectively reduce the false alarm rate.

The invention relates to the field of semiconductor material manufacturing, in particular to a molecular beam epitaxy heterogeneous base HgCdTe material and a preparation method thereof. In order to overcome the double defects of high dislocation density and out-of-control Se atom diffusion in the existing heterogeneous-base HgCdTe molecular beam epitaxy technology, a dislocation reaction is triggered by designing an HgSe superlattice structure, and an As-doped HgTe diffusion blocking layer is further constructed; finally, the molecular beam epitaxy heterogeneous base HgCdTe material can meet the core requirements of low dislocation density, zero Se diffusion and high stability of a high working temperature (greater than or equal to 150K) infrared detector. The problems that due to the fact that the dislocation density of a molecular beam epitaxy heterogeneous base HgCdTe is high, the dark current of a device is sharply increased, the blind pixel rate is increased, and Se diffusion of an epitaxial structure containing Se is out of control are solved.

The present application provides an uncooled infrared detector readout circuit and an uncooled infrared detector. The readout circuit comprises an uncooled infrared focal plane array (10), a pixel gating module (20), a logic control module (70), and a readout circuit module (40). The uncooled infrared focal plane array (10) comprises a plurality of infrared sensitive pixels (101) arranged in an array; the pixel gating module (20) is connected to the infrared sensitive pixels (101); the logic control module (70) and the pixel gating module (20) are connected to some infrared sensitive pixels by means of a logic gate circuit (80), and the logic control module (70) is configured to be capable of controlling none of the infrared sensitive pixels connected to the logic control module (70) to be gated; and the readout circuit module (40) is capable of performing signal readout on the gated infrared sensitive pixels.

The invention belongs to the technical field of battery foil rolling detection, and particularly relates to a method for testing a battery foil by using double thickness gauges of an aluminum foil rolling mill, which comprises the following steps of: mounting a sensor assembly on the aluminum foil rolling mill, and acquiring roller rotating speed, rolling force and roller vibration frequency of the aluminum foil rolling mill in real time; and the calculation equipment carries out filtering processing on the original thickness data of the battery foil collected by the thickness gauge based on the roller rotating speed, the rolling pressure and the roller vibration frequency of the aluminum foil rolling mill, instantaneous fluctuation data are filtered, and infrared detectors are arranged on the two sides of a discharging port of the aluminum foil rolling mill. Filtering processing is carried out on thickness data of the battery foil by combining operation parameters of a rolling mill, interference data of vibration of the battery foil on thickness detection in the roller operation process is recognized and removed, and meanwhile detection and cleaning correction are carried out on surface impurities, so that the thickness of a battery foil body and the thickness of the impurities are accurately distinguished; the effect of eliminating false fluctuation and impurity interference is achieved, and the authenticity of thickness detection data is improved.

The visible light and short-wave infrared dual-band detector comprises a tube shell, a cover plate, a thermoelectric refrigerator, a short-wave infrared chip set, a multilayer ceramic substrate with a cavity, a microlens array, a silicon-based visible light chip, an anti-reflection film and a coffering glue, the cover plate with a window is welded on the upper end of the tube shell, the multilayer ceramic substrate with a cavity is fixed on the bottom plate of the tube shell, the thermoelectric refrigerator is arranged on the bottom surface of the ceramic cavity, the short-wave infrared chip set is arranged on the thermoelectric refrigerator in the ceramic cavity, the microlens array is arranged on the light-sensitive surface of the silicon-based visible light chip, the anti-reflection film is made on the back light surface of the silicon-based visible light chip, the coffering glue is coated on the outer periphery of the short-wave infrared readout circuit chip, the silicon-based visible light chip with the anti-reflection film is fixed on the coffering glue, so that the pixels of the silicon-based visible light chip are aligned with the pixels of the indium gallium arsenide short-wave infrared light-sensitive chip in an up-down manner and one-to-one correspondence, the filling glue is filled between the anti-reflection film and the light-sensitive surface of the indium gallium arsenide short-wave infrared light-sensitive chip, and the silicon-based visible light chip and the indium gallium arsenide short-wave infrared chip are connected with the ceramic substrate through lead bonding wires.

The invention discloses a portable gas leakage detection device based on a refrigeration type superlattice infrared detector, which comprises a detector module, an optical lens group and a data processing unit, and is characterized in that the detector module comprises a refrigeration type detector and a refrigerator, and the refrigeration type detector is based on an infrared radiation absorption effect; the optical lens group comprises a medium-wave infrared lens and a visible light lens; and the data processing unit obtains data including an infrared image and a visible light image, and judges the gas leakage condition after the data is processed by a detection algorithm. According to the portable gas leakage detection device based on the refrigeration type superlattice infrared detector, long-distance and non-contact rapid detection and accurate leakage positioning of organic compounds and other industrial hazardous gases are achieved, and industrial production safety and environment safety are guaranteed.

The utility model belongs to the technical field of testing of uncooled infrared detectors, and particularly discloses an uncooled infrared detector performance test platform tool which comprises a first base and a second base which are movably connected. A guide rail assembly is arranged at the top of the first base, a sliding block is arranged on the guide rail assembly, the sliding block is in sliding connection with the guide rail assembly, a tool adapter plate is arranged at the top of the sliding block, the tool adapter plate is movably connected with the sliding block, and a detector testing tool is arranged at the top of the tool adapter plate and used for placing an uncooled infrared detector; the two second bases are connected with supporting tables through supporting rods correspondingly. The supporting table is used for placing a blackbody radiation source. According to the utility model, the detector test tool and the two blackbody radiation sources are respectively arranged on the first base and the second base, and the first base and the second base are movably connected, so that the blackbody radiation sources are fixed, and the distance between the blackbody radiation sources and the detector test tool can be adjusted; the device is suitable for different types of uncooled infrared detectors.

The invention discloses an infrared radiation calibration method and device considering a test distance, equipment and a storage medium. The method comprises the following steps: constructing an infrared radiation physical model considering the integral time of an infrared detector and the test distance of a target; and utilizing the training set and the coefficient learning network model to fit parameters in the infrared radiation physical model to obtain an optimal solution of the parameters, and applying the optimal solution to the infrared radiation physical model to complete infrared radiation calibration. According to the method, the influence of the test distance and the integral time on the relationship between the gray scale image and the radiation brightness is considered, so that the infrared radiation physical model is constructed, the accuracy of the radiation calibration result is improved, and the accuracy of the radiation calibration result is improved by utilizing the gray scale image under different test distance and integral time combinations. And parameters of the infrared radiation physical model are optimized by a training set consisting of the grey-scale maps and the black-body radiance corresponding to each grey-scale map, so that the infrared radiation physical model can set an optimal solution, and the measurement precision of the infrared radiation measurement system on the target radiance distribution is improved.

The utility model discloses a lever-type yarn-breaking automatic stop mechanism, which relates to the technical field of yarn-breaking automatic stop mechanisms and comprises a driving plate, a supporting sleeve, a lever-type yarn-breaking automatic stop mechanism, a lever-type yarn-breaking automatic stop mechanism and a lever-type yarn-breaking automatic stop mechanism, the supporting ring is fixedly connected with the supporting sleeve; the infrared detector is arranged on the fixed plate and is fixedly connected with the fixed plate; the driving block is arranged at the bottom of the driving plate and is in fit sliding connection with the bottom of the driving plate; by arranging an elastic mechanism and a driving block, the extrusion of a driving plate on the driving block is buffered, and the situation that the yarn is broken or damaged due to the fact that the extrusion force of a supporting ring on the yarn is large is avoided; and by arranging the lifting mechanism, lifting of the driving block is achieved, different yarns can be extruded conveniently, and the supporting ring can respond to the infrared detector more quickly when the yarns are broken.