994 results about "Infrared detector" patented technology

The invention relates to the technical field of gas leakage detection, and discloses an infrared imaging radiation correction method and system for gas leakage detection, and the method comprises the steps: obtaining the distribution data of dark current noise, and the mapping relation parameters of an image gray value and a radiation brightness value; acquiring infrared radiation of the gas leakage scene by using an infrared detector to obtain an original infrared image; based on the distribution data of the dark current noise, performing pixel-by-pixel compensation on the original infrared image to generate an infrared image after dark current correction; extracting the radiation intensity distribution of the infrared image after dark current correction, calibrating the radiation value of each pixel in the infrared image based on the mapping relation parameter between the image gray value and the absolute radiation brightness value, converting the image gray value into the absolute radiation brightness value, and generating the infrared image after radiation calibration; and outputting an infrared image after radiometric calibration for subsequent gas leakage area identification and feature analysis. According to the invention, a high-quality and quantifiable radiation quantification image can be output.

The invention discloses a goat oestrus monitoring system. The goat oestrus monitoring system comprises a multi-mode infrared thermal imaging data acquisition sensing unit and a multi-dimensional environment parameter collaborative real-time sensing unit. A goat body surface temperature field and a multispectral image are acquired through an uncooled vanadium oxide focal plane array infrared detector and a multiband spectral imaging module, environmental parameters are acquired in combination with a distributed sensing network, and a motion track is recorded through depth vision and inertia measurement. The heterogeneous multi-core data processing central unit is used for preprocessing, storing and preliminarily analyzing multi-source data, the feature extraction unit is used for mining multi-dimensional features, and the intelligent decision judgment unit is used for judging an estrus state by combining a deep neural network and dynamic threshold adjustment. The system integrates multiple technologies, can accurately monitor the oestrus state of the goats in real time, provides data support for scientific breeding, and improves breeding benefits.

The invention discloses a graphene composite perovskite manganese oxide polycrystalline ceramic and a preparation method and application thereof, and belongs to the technical field of non-refrigeration high-sensitivity infrared detection. The chemical expression of the graphene composite perovskite manganese oxide polycrystalline ceramic is La < 0.81 > (Ca < 0.03 > Sr < 0.16 >) MnO3: Gy, G is graphene, y is the mass fraction of graphene in perovskite manganese oxide composite powder, and y is equal to 0.1-0.2%. The TCR value of the prepared polycrystalline ceramic can reach 30% or above, the Tk value is close to 300K, the polycrystalline ceramic has excellent adaptability to room temperature work and excellent sensitivity to temperature change, and when the polycrystalline ceramic is applied to an uncooled infrared detector, the detection precision of the uncooled infrared detector can be effectively improved.

The invention belongs to the technical field of camouflage materials, and particularly relates to a natural vegetation imitating visible light-laser-infrared compatible camouflage film. Comprising a substrate, a thermal infrared dual-band camouflage and near infrared spectrum regulation and control layer and a visible light-laser-near infrared regulation and control layer which are arranged in sequence. The upper-layer natural vegetation imitating structure is mainly used for simulating spectral characteristics of natural vegetation, and meanwhile, the extremely low reflectivity at the position of 1.06 mu m near-infrared laser wavelength is achieved by controlling the thickness of a film layer; the thermal infrared camouflage structure in the middle realizes low emissivity of medium-wave infrared and long-wave infrared; the substrate provides a bearing function. The multilayer film not only can realize refined simulation of a reflection spectrum of natural vegetation in a visible light-near infrared wavelength range, but also has the functions of adjusting different visible light spectrum colors and resisting an infrared detector and a 1.06 [mu] m laser detector; and a visible light-laser-infrared multi-band compatible camouflage performance covering a wide wavelength range of 0.4-14 microns can be realized.

The invention relates to the technical field of PVC film processing detection, in particular to an intelligent PVC film flaw detection device which comprises a base, a controller, winding roller sets, a support, an infrared detector, a supporting column, an electric push rod and a marking instrument, the controller for controlling operation of all electrical components is installed on the side portion of the base, the winding roller sets are installed on the two sides of the upper portion of the base, and the infrared detector is installed on the support. A support is arranged in the middle of the upper portion of the base, a supporting column is arranged on the rear portion of the upper portion of the base, an electric push rod with a downward telescopic end is installed on the upper portion of the supporting column, a marking instrument is arranged at the telescopic end of the electric push rod, and an edge positioning set for assisting alignment of the edges of PVC films is arranged in the middle of the base. According to the invention, through automatic traction of the film by the winding roller group, dynamic deviation correction by the edge positioning group, real-time scanning by the infrared detector and accurate marking by the marking instrument, unmanned detection of the whole process from feeding to discharging is realized, and the detection efficiency is improved.

The invention provides a preparation method of a barrier type antimonide infrared detector. The preparation method comprises the following steps: selecting a gallium antimonide substrate; a gallium antimonide buffer layer, an indium arsenide heavily-doped layer, a class II superlattice absorption layer and an aluminum-arsenic-antimony barrier layer are sequentially grown on the substrate in an epitaxial mode through a molecular beam epitaxy method; mechanically stripping the hexagonal boron nitride two-dimensional material, and transferring the stripped hexagonal boron nitride to the aluminum-arsenic-antimony barrier layer to form a Van der Waals heterojunction and composite barrier layer structure; depositing electrodes by using an ultraviolet lithography technology and a thermal evaporation mode to form one electrode arranged on the gallium antimonide buffer layer and the other electrode arranged on the boron nitride; a large-numerical-aperture micro-lens array is processed on a substrate, and the micro-lens array is composed of gallium antimonide cylinders with a phase modulation function; therefore, the antimonide medium-wave infrared detector with the composite barrier layer can be formed, the quantum efficiency is improved, the order of magnitude of dark current is reduced, and room-temperature medium-wave infrared detection can be realized.

The invention discloses a calibration performance evaluation and analysis method for a stationary satellite hyperspectral infrared detector, and the method comprises the steps: firstly obtaining an ERA5 data set and L1-level observation data of the stationary satellite hyperspectral infrared detector, and inputting the data into a rapid transmission radiation model to obtain simulated radiation data; then comparing the simulated radiation data with L1-level observation data of a stationary satellite hyperspectral infrared detector, calculating systematic deviation and carrying out deviation analysis; and finally, performing cross matching verification on L1-level observation data of the stationary satellite hyperspectral infrared detector and observation data of the polar orbit satellite infrared atmospheric detection interferometer. On the basis of an atmospheric radiation model, more accurate and reliable calibration performance daily variation characteristics are provided to replace a calibration technology by using latest high-quality data and combining multi-source reference data, so that the defects of the prior art are effectively overcome, and the quality and the application effect of detection data are remarkably improved.

The embodiment of the invention discloses a light path device of a visible near-infrared detector array test calibration system, and the light path device of the visible near-infrared detector array test calibration system comprises a single photon source module which is used for generating near-infrared photons; the visible light generation module is used for generating visible light; and the optical focusing module adopts a coaxial light path and is used for focusing the photons output by the single photon source module and the visible light output by the visible light generation module to a photosensitive surface of the detector array to be tested.

The invention relates to the technical field of uncooled infrared detectors, in particular to an area array type pixel packaging uncooled infrared detector and a preparation method thereof, and the preparation method comprises the steps: dividing a readout circuit substrate into a pixel region and a getter region, preparing a structural cavity, and manufacturing a first release hole and a second release hole in the structural cavity, releasing the sacrificial layer of the structural cavity; the first release hole is shielded, and only the second release hole is opened; a getter coating process is carried out on the structural cavity, and a getter material is deposited to a getter area through a second release hole in an area which is not shielded by the shielding baffle; after the getter of the structural cavity is deposited, the structural cavity shielding baffle is removed, and the first release hole is opened; and plating a hole sealing film on the structural cavity, completing the sealing of the vacuum cavity, and then activating the getter of the structural cavity. According to the invention, the vacuum degree of the detector cavity is ensured, and a powerful guarantee is provided for subsequent performance improvement of the detector.

The invention discloses a vessel cleaning structure for infrared detector chip production, and relates to the technical field of infrared detector chip machining, the vessel cleaning structure comprises a cleaning support and further comprises a shaking device, a cleaning frame is fixedly installed on the inner wall of the cleaning support, placing holes are formed in the circumferential surface of the cleaning frame, linkage holes are formed in the circumferential surface of the cleaning frame, and the shaking device is arranged on the cleaning support. A lifting rod slidably penetrates through the top of the inner wall of the cleaning frame, clamping equipment is arranged on the circumferential surface of the lifting rod, the shaking device comprises a connecting block, a servo motor, a hollow rod, a rotating rod, a connecting groove, a fixing rod and a fixing block, and the lifting rod moves downwards to reset to drive the clamping equipment and a vessel to move downwards to reset. The clamping equipment longitudinally moves in a reciprocating mode to drive the vessel to move for cleaning operation, acid washing liquid can be evenly distributed on the surface of the vessel through reciprocating motion of the vessel, incomplete local cleaning is avoided, the cleaning time is shortened, and the cleaning efficiency is improved.

A high-precision double-range infrared gas sensor and a high-precision double-range infrared gas analysis method. The sensor comprises a chamber (10); the outer frame of the chamber (10) is of an enclosed structure; the inner wall of the chamber (10) is provided with a reflective part in an enclosed structure; and a first light source (7), a second light source (8), and an infrared detector (9) are arranged in the cavity of the chamber (10). During measurement, light emitted by the first light source and the second light source (8) is controlled, in a time-sharing manner, to be reflected in the chamber (10) to form a long measurement optical path length and a short measurement optical path length, thereby implementing the measurement of a gas to be measured having a low-range concentration and a high-range concentration. The high-precision double-range infrared gas sensor and the high-precision double-range infrared gas analysis method can simultaneously perform high-precision measurement on a low-range concentration and a high-range concentration, can simultaneously meet uses in HVAC air quality monitoring and heat pump CO2 safety and leakage monitoring, and have low cost and high reliability.

The invention discloses wafer defect detection equipment for semiconductor production, relates to the field of wafer detection, and solves the problem that the wafer clamping force is too large when an existing detection device turns over a wafer, the wafer defect detection equipment comprises a detection platform and a supporting plate, a mounting disc is arranged on the outer side of the supporting plate, an L-shaped support is arranged on the outer side of the mounting disc, and the L-shaped support is arranged on the outer side of the mounting disc. An infrared detector is mounted at one end of the L-shaped bracket, a mounting frame is mounted at the top of the detection platform, a detection box is mounted at the top of the mounting frame, and a transparent placement plate is arranged on the inner side of the detection box; the detection mechanism is used for carrying out double-sided detection on the wafer on the transparent placing plate, and the detection mechanism is mounted on the inner side of the detection box; through the detection mechanism, the top and the bottom of the wafer can be detected without overturning the wafer, contact with the wafer during detection is reduced, the problem that the clamping force of a traditional detection device on the wafer is too large is solved, wafer damage is prevented, and therefore the safe and multi-face detection effect is achieved.

The invention discloses a method for calculating the infrared radiation intensity of an aerial point source target, and the method comprises the steps: calibrating an infrared detector, determining the response gain coefficient and the pixel offset of each pixel of an infrared image through the calibration, and constructing a response gain coefficient matrix and a pixel offset matrix; determining the radiation brightness of each pixel point of the aerial measured point source target projection area image according to the response gain coefficient and the pixel offset; the step of determining the projection area of the detected point source target in the air is an effective projection area of the detected point source target in the air, the point source target infrared radiation intensity calculation method is improved, the precision of the calculation method is improved, and the calculation efficiency is improved. The method has the characteristics of high operability and wide applicability, and can be used as a universal method for calculating the infrared radiation intensity of the aerial point source target.

A cover for an infrared detector and a method of fabricating the cover are disclosed. The cover comprises a wafer comprising a material such as silicon that transmits infrared radiation. The wafer has a first surface and a second surface opposite the first surface. An antireflective region is formed in the wafer to enhance transmission of infrared radiation through the cover. The antireflective region comprises a first plurality of antireflective elements such as moth-eyes formed in the first surface. The first plurality of antireflective elements are sized and shaped and arranged relative to one another to form a region of graded refractive index at the first surface so as to reduce the amount of infrared radiation reflected by the cover at the antireflective region. The cover comprises a wall extending from the first surface and surrounding the antireflective region. The wall comprises a plurality of layers of material deposited on the wafer so that, when the cover is bonded to a sensor substrate via the wall, a cavity is formed that encapsulates a sensor region of the sensor substrate. The depth of the cavity may be adjusted by depositing the plurality of layers of material with a combined thickness equivalent to the desired depth of the cavity. A second plurality of antireflective elements may be formed in the second surface to enhance the antireflective properties of the antireflective region.

The invention discloses a PET bottle flake classifying and screening system, and relates to the technical field of PET bottle flake recycling, the PET bottle flake classifying and screening system comprises a first conveying belt and a mounting roller, a material distributing roller is rotatably arranged in a connecting cylinder, an adjusting mechanism is arranged in an outer box, and first electromagnetic plates are symmetrically arranged on the inner side of the first conveying belt; an electromagnetic roller is arranged in the driving roller at one end of the first conveying belt, an eddy current magnetic roller is arranged in the driving roller at one end of the second conveying belt, a mounting roller is fixedly arranged in the fixing cylinder, second electromagnetic plates are fixedly arranged in a plurality of mounting grooves in the mounting roller, and a sorting mechanism is arranged on the mounting roller. According to the PET bottle chip sorting device, the first electromagnetic plate, the electromagnetic roller and the eddy current magnetic roller are arranged, so that different PET bottle chips are conveniently sorted, meanwhile, the sorting mechanism is arranged, so that the PET bottle chips with iron metal are conveniently subjected to secondary sorting, and an electric push rod and an infrared detector are arranged, so that the sorting efficiency is improved. The discharging amount of the discharging end of the connecting cylinder can be adjusted by adjusting the position of the adjusting plate.

The invention discloses a mechanical arm clamping device for elbow production, and relates to the technical field of mechanical automation equipment, the mechanical arm clamping device comprises a base frame, a mechanical arm main body, an adjusting mechanism and a clamping mechanism; the telescopic end of the adjusting mechanism is fixedly connected with a clamping mechanism; the clamping mechanism comprises a cross beam plate, a moving plate, an annular frame and an infrared detector; and two groups of embedding grooves are formed in the bottom of the cross beam plate. According to the device, through cooperation of multiple assemblies, longitudinal angle adjustment is completed; the cylinder drives the extension plate to realize longitudinal depth adjustment of the magnetic seat. According to the design, the position and the angle of the clamping mechanism can be flexibly adjusted according to the bending degree of the bent pipe, U-shaped, S-shaped and other special-shaped bent pipes can be easily dealt with, the + / -90-degree swing limitation of a conventional rotating mechanism is broken through, and manual secondary positioning is not needed. And meanwhile, the clamping position and angle are accurately adjusted, the problem that the attaching error of a traditional clamping jaw is large is solved, it is ensured that the relative position of the clamping jaw and the bent pipe is unchanged, and the clamping stability and precision are improved.

The invention discloses an infrared polarization detector structure and a preparation method, and relates to the photoelectric detection technology, and the infrared polarization detector structure comprises a reading circuit (1) which is in inverted connection with an infrared material (2); one face of the infrared material (2) is connected with the reading circuit (1), array type polarization grating structures (4) are arranged on the other face of the infrared material (2), any polarization grating structure (4) forms a pixel, isolation groove structures (9) are arranged between the pixels on the infrared material (2), and the isolation groove structures (9) are filled with infrared isolation materials. According to the infrared polarization detector structure provided by the embodiment of the invention, the crosstalk of an infrared detector can be reduced, and the extinction ratio of the infrared polarization detector is improved.

The invention discloses a planar short-wave infrared detector and a preparation method and application thereof. The preparation method comprises the following steps: S1, sequentially growing the buffer layer, the N-type contact layer, the absorption layer, the undoped P-type layer and the cap layer on the substrate; s2, growing a layer of dielectric film on the surface of the cap layer; corroding the exposed cap layer by adopting a wet etching process; s3, removing the dielectric film after corrosion is finished; p-doped Al < 1-w > InwAs is grown in the corrosion area; s4, removing the cap layer and the P-doped Al < 1-w > InwAs on the upper surface of the undoped P-type layer; s5, growing a layer of passivation film on all the exposed upper surfaces; and forming a pattern of a metal contact layer on the surface of the passive film by photoetching to form a P electrode and an N electrode. According to the invention, the problem of high Zn diffusion process difficulty caused by large lattice mismatch between the epitaxial layer with high In component and the substrate is solved, and the performance of the device is improved.

The invention discloses a channel dynamic cloud detection method and system based on a meteorological satellite hyperspectral infrared detector, and the method firstly proposes nonlinear channel optimal selection based on Gaussian mixture model probability approximation quantization relative entropy, and can reduce the error distribution of temperature and humidity. Secondly, based on layer-by-layer cloud simulation and clear sky brightness temperature simulation, a cloud profile inversion method of a weighted L1 norm constraint inverse problem of Gaussian disturbance + numerical approximation signal degree-of-freedom optimization channel weight is provided, cloud amount information of multiple layers from bottom to top is obtained, and the actual condition of actual cloud vertical distribution is met. And finally, a cloud detection result is obtained by customizing each channel of each field point by adopting an adaptive dynamic cloud detection method, which is beneficial for reasonably using the brightness temperature data of the hyperspectral infrared channel and realizing the application of partial cloud region data, so that the data quantity of the brightness temperature of the variational assimilation channel is increased, and the precision of numerical weather forecast is further improved.

The invention provides an uncooled infrared detector reading circuit, an infrared detector and a control method of the infrared detector. The control method is applied to the uncooled infrared detector, the uncooled infrared detector comprises an uncooled infrared focal plane array with multiple rows and columns of infrared sensitive pixels, and the control method comprises the following steps: controlling the uncooled infrared detector to execute a first working state; in the first working state, part of the infrared sensitive pixels are gated so that signals can be read out; controlling the non-refrigeration infrared detector to be switched to a second working state; in the second working state, at least part of the infrared sensitive pixels are gated so that signals can be read out; wherein the number of the infrared sensitive pixels gated in the second working state is greater than the number of the infrared sensitive pixels gated in the first working state.

The invention relates to the technical field of infrared temperature measurement, in particular to an infrared thermal imaging device for a wide temperature measurement range and a design method of the infrared thermal imaging device. The design method comprises the steps that an all-pass plane mirror with the average infrared spectrum transmittance being 1 is arranged between a front-end optical system and a rear-end infrared detector; establishing a linear relation among the average infrared spectrum transmittance, the radiation temperature and the response total gray scale; determining the lower limit temperature corresponding to the response gray lower limit and the upper limit temperature corresponding to the response gray upper limit of the all-pass plane mirror according to the linear relation; at least one attenuation plane mirror for an infrared spectrum is designed between the front-end optical system and the rear-end infrared detector; and taking the upper limit temperature corresponding to the all-pass plane mirror as the lower limit temperature corresponding to the attenuation plane mirror, and calculating the average infrared spectrum transmittance of the attenuation plane mirror and the upper limit temperature corresponding to the attenuation plane mirror according to the linear relation. According to the scheme, wide-range temperature measurement can be realized.

The invention provides an uncooled infrared detector reading circuit and an uncooled infrared detector. The reading circuit comprises an uncooled infrared focal plane array, a pixel gating module, a logic control module and a reading circuit module. The uncooled infrared focal plane array comprises a plurality of rows and columns of infrared sensitive pixels; the pixel gating module is connected with each infrared sensitive pixel; the logic control module and the pixel gating module are connected with a part of infrared sensitive pixels through a logic gate circuit, and the logic control module is configured to be capable of controlling the infrared sensitive pixels connected with the logic control module not to be gated and controlling the infrared sensitive pixels not connected with the logic control module to be gated; and the readout circuit module can be used for carrying out signal readout on the gated infrared sensitive pixels.

The invention relates to a preparation method of a lead selenide room-temperature medium-wave infrared detector, which comprises the following steps of: (1) depositing a lead selenide film layer on a substrate by adopting a magnetron sputtering technology and taking oxygen as reaction gas; (2) placing the lead selenide film in a horizontal tube furnace, and realizing high-temperature oxidation in normal-pressure pure oxygen; and (3) putting the lead selenide film into a vertical tube furnace, and realizing high-temperature iodination in a normal-pressure environment. The lead selenide thin film is prepared through the magnetron sputtering technology, compared with chemical bath deposition, the quality of the thin film is effectively improved, and large-area and high-uniformity thin film preparation is achieved; the magnetron sputtering film is subjected to high-temperature oxidation-iodination treatment, the magnetron sputtering film has excellent photoresponse to infrared light, and the sensitization technology is specific and clear and good in repeatability; the sensitized lead selenide thin film layer and the top electrode form the photoconductive detector, the specific detection rate of the device is 7.6 * 10 < 9 > Jones at 4.3 microns at the room temperature of a medium-wave infrared band, and the performance is excellent.

The invention discloses a cast aluminum core surface defect detection device based on the optical technology, and relates to the technical field of cast aluminum core detection.The cast aluminum core surface defect detection device based on the optical technology comprises a main body, two frame plates are symmetrically installed on the main body, and transverse guide rails are installed at the tops of the frame plates; a first sliding seat is slidably mounted on each transverse guide rail, the first sliding seats are connected through a longitudinal guide rail, a second sliding seat is slidably mounted on the longitudinal guide rail, an electric lifter is mounted at the bottom of the second sliding seat, an arc-shaped guide rail is mounted on the electric lifter, a third sliding seat is slidably mounted on the arc-shaped guide rail, and a third sliding seat is mounted on the third sliding seat. And an infrared detector is installed on the third sliding seat, by starting the transverse guide rail, the longitudinal guide rail and the arc-shaped guide rail, the irradiation angle of the infrared detector can be adjusted, meanwhile, comprehensive detection on the cast core through the infrared detector is facilitated, and the detection precision can be improved.

The utility model relates to the technical field of polishing detection, in particular to a piston rod polishing surface detection device which comprises a supporting body, a pushing plate, a motor support and a positioning rod, the supporting body is a U-shaped supporting frame, the pushing plate is parallel to the bottom face of the supporting body and is connected with two side plates of the supporting body in a sliding mode, and the motor support is fixedly installed on one side plate of the supporting body. The positioning rod is slidably connected to the upper surface of the motor support, the other side plate of the supporting body is rotationally connected with a hook-shaped rotating body, and an infrared detector is connected to the upper portion of the supporting body. According to the utility model, whether the surface smoothness of the piston rod is qualified or not can be detected only by inserting the hook-shaped rotating body into the positioning pin at one end of the piston rod to be detected, placing the piston rod to be detected on the pushing plate and operating each motor, the operation is convenient, and the detection is rapid and accurate.

The invention belongs to the technical field of power transmission line on-line monitoring, and particularly relates to a power transmission line bird sound and bird damage early warning identification and active expelling method and system based on multi-modal perception, and the method comprises the steps: employing a multi-modal perception unit to monitor the surrounding environment of a power transmission line tower, and enabling a microwave infrared detector to detect a moving object, activating a holder and a voiceprint sensing module, and collecting image and voiceprint data; comprehensively judging whether a target is a threatening bird or not through a multi-modal data fusion decision module in combination with infrared microwave features, a voiceprint comparison result and an image recognition result; if the bird is judged to be a threatening bird, controlling an audible and visual alarm module and / or a flash lamp module to execute a repelling action according to a current period silence strategy; monitoring bird behaviors in real time, and if the birds fly away from the target area, terminating the repelling action and recovering the low-power-consumption standby mode; and uploading the image and voiceprint data in the expelling process to a server, optimizing the recognition model and updating the expelling strategy.

This invention discloses an enhanced lead-salt uncooled mid-wave infrared detector and its fabrication method, relating to the field of photoelectric detection technology. The detector comprises: a substrate, a reflective layer, a dielectric layer, a microstructure array layer, a lead-salt sensitive layer, a metal electrode layer, and a passivation layer. The fabrication method includes: fabricating a metal reflective layer on the substrate surface; fabricating a resonant cavity layer on the reflective layer; fabricating a microstructure array layer on the resonant cavity layer; fabricating a lead-salt sensitive layer on the microstructure array layer; sensitizing the lead-salt sensitive layer; fabricating a metal electrode on the lead-salt sensitive layer; and fabricating a passivation layer on the lead-salt sensitive layer and the metal electrode. The beneficial effect of this invention is that it combines the LSPR effect of the resonant cavity and the artificial plasmon resonance array (i.e., the metal microstructure array), which can effectively enhance the mid-wave infrared radiation absorption of the device. It has the characteristics of high performance, high sensitivity, and high stability, and is expected to be widely used in the field of mid-wave infrared detection.

The invention discloses an infrared four-waveband composite annular aperture folded imaging optical system, belongs to the technical field of optical catadioptric optical paths, and aims to solve the problem that 1550nm / 1064nm dual-laser and medium-wave / long-wave infrared four-waveband composite detection is difficult to realize at the same time in the conventional annular aperture imaging technology. The system comprises a primary mirror, a secondary mirror, a 1064nm laser spot correction mirror, a 1550nm laser spot correction mirror, a 1064nm laser spectroscope, a 1550nm laser spectroscope, a broadband infrared detector, a 1550nm laser detector and a 1064nm laser detector. And high-performance common-aperture composite detection of 1064nm / 1550nm dual laser and medium-wave / long-wave infrared four wavebands is realized through a multi-stage light splitting mechanism. The limitation that a traditional annular aperture system is single in wave band is broken through, and the all-weather sensing and target recognition capability of the system in a complex environment is remarkably improved.

The present application discloses a pixel-level packaging structure for an uncooled infrared detector and a manufacturing method thereof, comprising an integrated circuit substrate and a pixel device disposed on the upper surface of the integrated circuit substrate; the pixel device comprises a pixel unit and an air-intake unit disposed on one side of the pixel unit, the air-intake unit comprising a getter layer disposed on the upper surface of the integrated circuit substrate, a support layer, and a sealing layer disposed on the upper surface of the support layer; the cavity in the air-intake unit is connected to the cavity in the pixel unit; or the pixel device comprises a getter layer and a reflective layer disposed on the upper surface of the integrated circuit substrate, and an infrared sensor unit disposed above and corresponding to the reflective layer. The pixel device comprises a pixel unit and an air-intake unit disposed on one side of the pixel unit, the getter layer not being disposed in the pixel unit; or the getter layer in the pixel device does not correspond to the infrared sensor unit, thereby avoiding the influence of the getter layer on the infrared sensor unit and improving the performance of the uncooled infrared detector.

According to the tantalum-nickel-selenium intermediate infrared detector based on microstructure regulation and control, a silicon dioxide layer is arranged on an intrinsic high-resistance silicon substrate, a plasmon microstructure and a grating structure are arranged on the silicon dioxide layer, and the grating structure and the plasmon microstructure are arranged at an interval. The plasmon microstructure and the grating structure are covered with a tantalum-nickel-selenium nanosheet, and the tantalum-nickel-selenium nanosheet is covered with a hexagonal boron nitride nanosheet protective layer. According to the invention, energy band alignment of tantalum-nickel-selenium and gold is utilized, and a synergistic effect of mid-infrared absorption enhancement and asymmetric temperature distribution of a microstructure area is realized with a plasmon microstructure and a grating microstructure in the microstructure, so that efficient mid-infrared self-driven detection, high response speed, high efficiency and high-performance infrared detection are realized.