419 results about "Ultraviolet detectors" patented technology

The invention provides a quality control method of fluorine [< 18 > F] piramide injection, which adopts a high performance liquid chromatography, adopts a C18 chromatographic column, takes 10mM phosphate buffer with pH of 6-8 as a mobile phase A, takes acetonitrile as a mobile phase B, and performs gradient elution. The quality control method provided by the invention can effectively separate fluorine [19F] piramide and other ultraviolet impurities in the injection and effectively separate fluorine [18F] piramide and other radiochemical impurities, and provides a basis for an accurate detection result; the radiochemical purity of fluorine [18F] pyramide and the content and impurities of fluorine [19F] pyramide are measured at the same time by combining an ultraviolet detector and a radioactive flow detector. Operation is carried out for 20 min, detection is completed, and rapid inspection and release of the fluorine [18F] piramide injection are achieved; the marked synthetic mother liquor is used as an impurity test sample and / or a radiochemical purity marked solution, so that all impurities in the injection can be detected and the detection accuracy is ensured.

The invention relates to the technical field of semiconductor photoelectric detectors, in particular to an alpha-phase gallium oxide thin film, an ultraviolet detector and a preparation method. The preparation method comprises the following steps: selecting a c-plane sapphire substrate, and placing the substrate in an MOCVD reaction chamber; the reaction chamber is alternately inflated and vacuumized, and the substrate tray is heated to 650-730 DEG C; introducing an oxygen source into the MOCVD reaction chamber, and supplying a reaction source to form alpha-Ga2O3 on the surface of the substrate; adjusting the flow of the carrier gas to 1000-2000 sccm, and continuously supplying an oxygen source and a reaction source to the MOCVD reaction chamber to realize epitaxial growth of the single crystal alpha-Ga2O3 film; and cooling to room temperature and taking out to finish the preparation of the alpha-phase gallium oxide film on the c-plane sapphire substrate. The method has the advantages that the alpha-phase gallium oxide film has high crystallinity and low surface roughness; the ultraviolet detector has the advantages of high responsivity and high response speed, and shows excellent ultraviolet detection performance.

The invention provides a gallium oxide ultraviolet detector based on a difunctional self-assembly passivation layer and a preparation method thereof, the gallium oxide ultraviolet detector comprises a substrate layer, an oxidant layer and the difunctional self-assembly passivation layer which are arranged from bottom to top, and two sides of the difunctional self-assembly passivation layer are provided with metal electrodes in contact with a gallium oxide layer. Wherein the bifunctional self-assembly passivation layer comprises a first passivation layer and a second passivation layer which are arranged from bottom to top, the passivation material of the first passivation layer is a material for reducing surface defects of the gallium oxide layer, and the passivation material of the second passivation layer is a material for enhancing the ultraviolet photon absorption rate. Passivation materials with different functions are combined to form the dual-function self-assembly passivation layer, and the dual-function self-assembly passivation layer is adopted to perform passivation treatment on the gallium oxide ultraviolet detector, so that the performance of the gallium oxide ultraviolet detector is jointly improved from two aspects of reducing surface defects of gallium oxide and enhancing ultraviolet photon absorption.

The invention relates to the technical field of semiconductor photoelectric detectors, in particular to a gallium oxide-based laminated structure ultraviolet detector and a preparation method thereof. The detector comprises a gallium nitride single crystal substrate, a GaON thin film layer and a beta-Ga2O3 thin film layer which are tightly stacked from bottom to top, and an electron transport layer and a hole blocking layer which are symmetrically arranged on the surface of one side, away from the gallium nitride single crystal substrate, of the beta-Ga2O3 thin film layer, and metal electrodes are arranged on the electron transport layer and the hole blocking layer. The material of the electron transport layer is ZnO, and the material of the hole blocking layer is TiO2. The device has the advantages that the device structure is stable, the response time can reach microsecond magnitude, and the descending time is short; the adverse effect caused by the inherent continuous photoconductive effect of the gallium oxide material is effectively overcome, the internal defects are obviously reduced, and the ultraviolet photoconductive gain is increased while the inherent continuous photoconductive effect of the gallium oxide is inhibited.

The invention discloses a wide-spectrum response pin high-temperature ultraviolet detector, which belongs to the technical field of microelectronics and comprises a 4H-SiC substrate, a 4H-SiC epitaxial layer arranged on the 4H-SiC substrate, a 4H-SiC absorption layer and a beta-Ga2O3 absorption layer which are arranged on the left side and the right side of the upper surface of the 4H-SiC epitaxial layer, a 4H-SiC contact layer arranged on the 4H-SiC absorption layer and a beta-Ga2O3 contact layer arranged on the beta-Ga2O3 absorption layer. The left side of the 4H-SiC contact layer, the left side of the 4H-SiC absorption layer and the left side of the 4H-SiC epitaxial layer are respectively provided with a left half dip angle mesa structure. The right sides of the beta-Ga2O3 contact layer, the beta-Ga2O3 absorption layer and the 4H-SiC epitaxial layer are provided with right half part inclined table-board structures; the N / P-type ohmic contact metal is arranged on the upper / lower mesa of the inclined mesa structure. The detector is high in light response capability and wide in detection wavelength range.

The present invention provides a kind of detection method of thirteen kinds of related substance contents in vonoprazan fumarate, and high performance liquid chromatography is used for detection, and the chromatographic conditions are: the test solution and the reference solution are injected into the high performance liquid chromatograph, and the chromatographic conditions are: the chromatographic column adopts octadecyl bonded silica gel column; the ultraviolet detector is used, and the detection wavelength is 260nm; the injection volume: 10μl; the column temperature: 30℃‑40℃; the flow rate: 0.8ml / min‑1.0ml / min; the gradient elution method is used, and the mobile phase A: the solution of 0.02mol / L potassium dihydrogen phosphate solution adjusted to pH 8.0 with potassium hydroxide solution and isopropanol mixed with a volume ratio of 95:5; the mobile phase B: the mixed solution of acetonitrile and isopropanol with a volume ratio of 95:5. The method can be used to detect the contents of 13 kinds of related substances in vonoprazan fumarate, and high performance liquid chromatography is used for detection, and the method has high detection sensitivity, and the verification results show that the system applicability and specificity of this method meet the requirements, and the needs of drug production quality monitoring can be met.

The invention discloses a rapid qualitative and quantitative detection method for quantitative analysis of multiple components by single marker of rhodiola rosea, astragalus membranaceus and safflower capsules, and belongs to a detection and analysis technology. According to the method, three traditional Chinese medicines, namely rhodiola rosea, astragalus membranaceus and safflower carthamus, are identified on a thin-layer plate by adopting a thin-layer chromatography method and a same test solution, the pretreatment of a sample and a reference medicinal material only needs 3 hours, 265 mL of a solvent is adopted, spots are clear, and the method is rapid; according to the established single-detection double-evaluation method for salidroside and calycosin-7-glucoside, only an ultraviolet detector is needed, detection is carried out under the wavelength of 270 nm, chromatographic peaks do not interfere with one another, single-detection double-evaluation is achieved, the efficiency is high, and the cost is low. The invention breaks through a traditional identification mode that N traditional Chinese medicine varieties are identified, N test solutions and N thin-layer plates are prepared, N times of development are needed, and N medicinal materials are identified, and establishes a rapid thin-layer identification method for three traditional Chinese medicines on one thin-layer plate by adopting the same test solution and each reference medicinal material supernatant subjected to methanol ultrasonic treatment.

The invention discloses a gallium oxide solar-blind ultraviolet detector based on selective area etching and a preparation method thereof, and belongs to the technical field of semiconductor photoelectric detection. Comprises from bottom to top: a substrate; the first epitaxial layer is located on the substrate, and the first epitaxial layer is a highly doped n-Ga2O3 layer; the second epitaxial layer is located on the first epitaxial layer, and the second epitaxial layer is a lightly doped n-Ga2O3 layer; the third epitaxial layer is located on the second epitaxial layer, the third epitaxial layer is a highly-doped p-NiO layer, and the third epitaxial layer is distributed at intervals through selective area etching; and the first ohmic contact layer is located on the area where the third epitaxial layer is distributed at intervals. The detector adopts a PN junction structure working in a reverse bias state, and compared with a Schottky structure, the detector has the advantages that the built-in electric field intensity and the leakage current level of a device are less affected by high-energy photon irradiation and working environment temperature change, and the anti-irradiation performance of the device and the working capability under an extreme temperature condition are effectively improved.

The invention discloses a method for detecting related substances in atosiban acetate and a preparation thereof, and belongs to the technical field of chemical analysis. According to the method, a high performance liquid chromatography method is adopted, a C18 chromatographic column is used as a stationary phase, an ultraviolet detector is used as a detector, a buffer salt solution-organic phase is used as a mobile phase, and a gradient elution procedure is adopted to detect the content of related substances in atosiban acetate and the preparation thereof. The related substances comprise Di-Gly9-atosiban, delta-Ava7-atosiban, Des-Gly9-atosiban, Gly9-ol-atosiban, Asp5-atosiban, Gly9-OH-atosiban, a dimer (Gly-Orn), and Des-Gly-Aminoperperidine8-atosiban, and the related substances are used for preparing the medicine for preventing and treating ovarian cancer. The medicine for preventing and treating ovarian cancer can be used for preventing and treating ovarian cancer, ovarian cancer, ovarian cancer, ovarian cancer, ovarian cancer, ovarian cancer, ovarian cancer, ovarian cancer, ovarian cancer and the like. The method has the advantages of strong specificity, good repeatability and high accuracy, and can effectively control the quality of atosiban acetate and preparation products thereof.

The invention relates to a screening method and an activity evaluation method of a natural antioxidant, and the screening method is characterized in that a cerium dioxide-based nano composite material with a specific structure is used as oxidase, a nano oxidase + natural antioxidant reaction system is constructed, and the activity of the natural antioxidant is evaluated through a high performance liquid chromatography-ultraviolet detector-tandem mass spectrometry analysis technology. Screening of the natural antioxidant is realized; according to the activity evaluation method, a cerium dioxide-based nano composite material with a specific structure is used as oxidase, a nano oxidase + natural antioxidant + TMB reaction system is constructed, and the activity evaluation of the natural antioxidant is realized through an oxidized TMB photo-thermal detection technology. According to the method disclosed by the invention, the used reaction system is high in applicability, high in accuracy and good in selectivity.

According to the method, a polysaccharide derivative bonding type chiral chromatographic column with silica gel surface bonded amylose-tri (3, 5-dichlorophenyl carbamate) as a filler is adopted, a mixed solution of n-hexane and isopropanol is used as a mobile phase, the column temperature is 28-32 DEG C, the flow velocity is 1.1-1.3 ml / min, the column temperature is 20-30 DEG C, the column temperature is 20-30 DEG C, the column temperature is 20-30 DEG C, the column temperature is 20-30 DEG C, the column temperature is 20-30 DEG C, and the column temperature is 20-30 DEG C; an ultraviolet detector is adopted, the wavelength is 205-220 nm, and effective separation of the etomidate intermediate and the enantiomer thereof is achieved. The method is good in detection result accuracy and high in sensitivity, and compared with an existing analysis method, the method is better in separation effect, simpler in mobile phase composition, more durable in chromatographic column and lower in cost, so that a good guarantee is provided for quality control of the etomidate intermediate and etomidate.

The invention relates to an epitaxial growth method of a gallium oxide material, a gallium oxide epitaxial structure and an ultraviolet detector. The epitaxial growth method of the gallium oxide material comprises the following steps: providing a substrate; forming an aluminum nitride layer on the substrate; epitaxially growing at least one composite interface layer on the aluminum nitride layer, wherein the composite interface layer comprises an aluminum oxide layer and an indium oxide layer which are stacked in sequence; and epitaxially growing a gallium oxide layer on the composite interface layer. Therefore, the dislocation density and thermal stress in the gallium oxide layer can be reduced, and the quality and performance of the gallium oxide epitaxial structure can be improved. When the prepared gallium oxide epitaxial structure is applied to a photoelectric detector, the performance and the reliability of the device can be remarkably improved.

The invention relates to the field of ultraviolet detectors, and particularly provides a solar-blind ultraviolet photoelectric detector and a preparation method and application thereof. The preparation method comprises the following steps: S1, carrying out first spin coating of a gallium oxide precursor solution on a substrate, and carrying out first heat treatment to obtain a gallium oxide polycrystalline thin film; s2, depositing a metal electrode on the surface of the gallium oxide polycrystalline film; and S3, carrying out second spin coating on the metal electrode with an indium gallium zinc oxide precursor solution, and carrying out second heat treatment to obtain the solar-blind ultraviolet photoelectric detector. The solar blind ultraviolet photoelectric detector is reliable in process and good in repeatability, and the obtained solar blind ultraviolet photoelectric detector at least has the advantages of being high in responsivity, high in detection rate and high in light and dark current.

The invention discloses a flexible self-powered solar-blind ultraviolet detector based on gallium oxide and a preparation method thereof. The flexible self-powered solar-blind ultraviolet detector is specially designed to be used for efficient and low-power-consumption ultraviolet light detection in a complex environment. The detector is characterized by the design of the asymmetric electrode and the aluminum oxide passivation layer. The device specifically comprises a first metal electrode and a second metal electrode which are located on a gallium oxide thin film and can respectively form Schottky contact and ohmic contact through different technological processes and a patterned passivation layer according to different materials and sizes of the first metal electrode and the second metal electrode, so that the photoelectric property is effectively improved. The first metal electrode realizes high-quality ohmic contact by increasing the contact area, selecting materials and adopting an annealing process. And the second metal electrode realizes Schottky contact and improves the contact barrier through material selection and introduction of a passivation layer. The asymmetric electrode design can enhance a built-in electric field and effectively realize separation of photon-generated carriers, so that self power supply is better realized.

The invention belongs to the technical field of textile detection, and particularly relates to a textile anti-ultraviolet intensity detection device which comprises a detection machine body. The detection machine body is fixedly connected with an anti-ultraviolet detector; side plates are fixedly connected to the upper surface of the detection machine body and located on the two sides of the lower portion of the anti-ultraviolet detector; the two first electric sliding blocks synchronously drive the bottom disc and the top disc to be separated and combined, a textile sample is clamped between the bottom disc and the top disc and conveyed to the output end of the anti-ultraviolet detector for anti-ultraviolet intensity detection, a traditional manual feeding or semi-automatic feeding mode is replaced, the effect of automatic feeding detection is achieved, and the production efficiency is improved. The feeding speed and the anti-ultraviolet intensity detection efficiency are improved, a vacuum pump is used for being matched with four suction cups to conduct vacuum adsorption on a single textile sample, the adsorbed textile sample is driven by a second electric sliding block to slide to a base plate, and the effect of feeding the textile sample is achieved.

The invention discloses withanolide active components in calyx seu fructus physalis as well as an extraction method and application thereof, and the extraction method comprises the following steps: crushing the calyx seu fructus physalis, soaking the calyx seu fructus physalis by adopting an ethanol solution with the volume percentage of 0-75% as an extracting agent, and performing reflux extraction to obtain an extracting solution; refining and concentrating the extracting solution to obtain a calyx seu fructus physalis extract; enabling the calyx seu fructus physalis extract to pass through a macroporous adsorption resin column, and carrying out gradient elution by taking an ethanol solution with the volume fraction of 0-100% as an eluent; in the elution process, a high performance liquid chromatography is combined with an ultraviolet detector and an evaporative light detector to analyze the eluent of each gradient so as to determine the elution volume of the ethanol solution of each gradient, and the effluent of the 50%-80% ethanol solution is collected to obtain the withanolide active components. According to the present invention, HPLC, ELSD, in vitro drug activity detection and other methods are combined, and the preparation process with characteristics of high yield, low cost and high safety coefficient is designed to be suitable for industrial production.

The invention relates to the technical field of solar-blind ultraviolet detector materials, and particularly discloses a diamond / gallium oxide heterojunction and application of the diamond / gallium oxide heterojunction to a solar-blind ultraviolet detector, and the diamond / gallium oxide heterojunction comprises a single crystal diamond layer and a Zr-doped epsilon-Ga2O3 layer located on the single crystal diamond layer; the single crystal diamond layer is made of (100) oriented single crystal diamond, and the surface roughness RMS of the single crystal diamond is 2-6 nm; the Zr-doped epsilon-Ga2O3 layer is Zr-doped epsilon-Ga2O3 which is grown on the surface of the monocrystal diamond in a heteroepitaxial manner by adopting a pulse laser deposition method; zr-doped epsilon-Ga2O3 grows on the surface of the monocrystal diamond along the (001) direction; and the Zr doped epsilon-Ga2O3 is of a columnar crystal structure. The heterojunction provided by the invention realizes excellent photoelectric detection performance, solves the problem of poor selectivity of a traditional solar blind ultraviolet detector, and has wide application value.

The invention provides a gallium oxide solar-blind ultraviolet detector based on nickel oxide quantum dots and a preparation method thereof. The preparation method comprises the following steps: S1, cleaning and drying a substrate on which gallium oxide grows; s2, performing etching on the surface of the gallium oxide to form a beta-Ga2O3 channel; s3, depositing laminated metal on the substrate as an electrode, and annealing to alloy the laminated metal so as to form ohmic contact with the gallium oxide; and S4, spin-coating p-type NiO quantum dots between the electrodes, introducing the p-type NiO quantum dots and the n-type beta-Ga2O3 through quantum dot integration to form a pn heterojunction gallium oxide ultraviolet detector, and improving the light responsivity and the response speed of the gallium oxide solar blind ultraviolet detector at the same time.

The invention discloses a method for determining impurities in a desloratadine oral solution, the impurities comprise a desloratadine impurity 1, the determination method adopts a high performance liquid chromatography, and the detection conditions of the high performance liquid chromatography are as follows: a chromatographic column is an octyl silane bonded silica gel column or an efficiency equivalent column; the detection wavelength is 254 + / -2nm; the detector is an ultraviolet detector; the column temperature is 35-45 DEG C; the flow rate is 1.1 to 1.3 mL / min; mobile phases: a dipotassium phosphate buffer solution, methanol and acetonitrile; the elution mode is isocratic elution. The determination method disclosed by the invention is good in specificity, good in separation degree, high in sensitivity and good in accuracy, can fully meet the requirements of impurity determination, has important meanings for evaluating the quality of raw material medicines and the advantages and disadvantages of a preparation process, controlling the quality of a final product and detecting a stable sample, and is high in practicability in actual quality control work.

The invention relates to the technical field of iodide content detection, in particular to a method for determining radiochemical purity and iodine content of sodium iodide capsules for diagnosis by HPLC (High Performance Liquid Chromatography), which comprises the following steps: setting chromatographic conditions, and connecting a radioactive flow detector and an ultraviolet detector in series; preparing a disodium hydrogen phosphate solution, a glucose solution, a vitamin C solution, a first control solution, a potassium iodate solution, a second control solution, a carrier solution, a first sample solution, a second sample solution, a negative control solution and a test solution; and determining the radiochemical purity and iodide content of the first sample solution and the second sample solution in three batches based on the chromatographic conditions and the determination standard. According to the method, test parameters such as capsule sample analysis time, a pretreatment mode and a sample size are optimized, the radiochemical purity of the capsule is accurately determined, and the iodide content is controlled, so that the problem that main components cannot be accurately quantified and potential radioactive impurities cannot be detected by a traditional diagnosis sodium iodide [131I] capsule determination method is solved.

The invention relates to the technical field of semiconductor photoelectric detectors, in particular to a surface acoustic wave ultraviolet detector and a preparation method thereof. The detector comprises a substrate, an epsilon-phase gallium oxide layer and a metal electrode layer which are arranged from bottom to top, the metal electrode layer comprises two groups of energy converters and reflecting gratings which are symmetrically arranged, the energy converter at one end is used for receiving radio frequency signals, and the energy converter at the other end is used for connecting direct current bias voltage. According to the surface acoustic wave ultraviolet detector, the interaction of the acoustic-electric effect and the piezoelectric effect of the surface acoustic wave is utilized. The method has the advantages that on one hand, technical means such as doping, surface treatment or high-temperature annealing do not need to be introduced into the epsilon-phase gallium oxide film; and on the other hand, one end of the transducer is used for receiving a radio frequency signal, the excited surface acoustic wave is propagated in the epsilon-phase gallium oxide layer, and the surface acoustic wave with a specific frequency is selectively enhanced when the surface acoustic wave reaches the reflecting grating. The surface acoustic wave can promote the separation of photon-generated carriers and inhibit electron-hole recombination, thereby effectively improving the performance of the detector.

The invention discloses a diamond / gallium oxide ultraviolet detector and a preparation method thereof. The diamond / gallium oxide ultraviolet detector sequentially comprises a single crystal diamond substrate, an intrinsic single crystal diamond epitaxial layer, an finger-type ohmic electrode, a gallium oxide layer and a finger-type Schottky electrode from bottom to top, the finger-type ohmic electrode comprises an ohmic electrode strip array and an ohmic electrode pad which are connected with each other; the finger-type Schottky electrode comprises a Schottky electrode strip array and a Schottky electrode pad which are connected with each other; and the ohmic electrode strip array and the Schottky electrode strip array form a different-plane interdigital structure. Defects formed by the diamond layer and the gallium oxide layer are depleted, capture or recombination of interface defects to photon-generated carriers is reduced, electric field distribution can be optimized, collection of the carriers is facilitated, and the performance of the device is improved.

The invention discloses a method for determining nitrosamine impurity N-nitrosobumetanib in bumetanib, which comprises the following steps: using a high performance liquid chromatograph and an ultraviolet detector, using octadecyl silane bonded silica gel as a chromatographic column filler, using formic acid solution as a mobile phase A, using methanol as a mobile phase B, the content of the nitrosamine impurity N-nitrosobumetanib in the bumetanib is determined through gradient elution. The novel high performance liquid chromatography is designed, the content of the nitrosamine impurity N-nitrosobumetanib in the bumetanib can be accurately measured, the blank that a method for measuring the N-nitrosobumetanib in the bumetanib bulk drug does not exist at present is filled, and the analysis method is verified; the method for determining the nitrosamine impurity N-nitrosobumetanib in the bumetanib, provided by the invention, is good in repeatability, high in selectivity, good in accuracy and high in precision and sensitivity; according to the invention, the quality control of the medicine can be effectively enhanced.

The invention provides a method for simultaneously detecting the purity of an antibody conjugate and the coupling ratio of a drug antibody based on a size exclusion chromatography method and application of the method. The method comprises the following steps: detecting and analyzing the purity of an ADC (Analog to Digital Converter) sample to be detected and the coupling ratio of the drug antibody by adopting an SEC-UPLC (Single Emission Computation-Ultra Performance Liquid Chromatography) serially connected with an ultraviolet detector; collecting a signal of the sample under the antibody characteristic ultraviolet absorption wavelength and the small molecule characteristic ultraviolet absorption wavelength at the same time; calculating the DAR value and the monomer purity of the ADC molecule according to the chromatographic absorption peak area; a mobile phase adopted by the SEC-UPLC is a sodium chloride-phosphate buffer solution containing 0-10vol% of an organic solvent; the ADC sample to be detected is an ADC molecule coupled with Dxd type small molecules. The invention provides an analysis method which is widely applicable to determination of the DAR value and the monomer purity of the ADC molecule coupled with the Dxd small molecules. The method can simultaneously solve the problems that the DAR value detection and analysis flux of the Dxd small molecules is low and the applicability is limited.

The invention relates to the technical field of semiconductor detectors, in particular to a gallium oxide mixed-phase thin film, an ultraviolet detector and a preparation method of the gallium oxide mixed-phase thin film. The gallium oxide mixed-phase thin film is doped with 5-15 at% of zinc, and the crystal phases comprise two crystal phases, namely beta-Ga2O3 of a monoclinic system and epsilon-Ga2O3 of a hexagonal system; the preparation method comprises the following steps: cleaning a substrate; the substrate tray is heated to 500 DEG C to 950 DEG C, and the internal pressure is kept at 1000 Pa to 2000 Pa; introducing high-purity nitrogen; a zinc organic source and a gallium organic source are introduced in an equal proportion every 5-30 min, and the condition is kept for 20-50 min after the final gas carrying capacity is achieved; slowly introducing high-purity oxygen until the flow rate of the oxygen reaches 500-1000sccm and is constant, and slowly growing zinc-doped Ga2O3; and growing for 80-150 minutes to obtain the gallium oxide mixed phase thin film. The invention has the advantages of high stability, good robustness and enhanced light response in the device.

The invention relates to the technical field of semiconductor photoelectric detectors, in particular to a gallium oxide-based ultraviolet detector with a vertical structure and a preparation method of the gallium oxide-based ultraviolet detector. The detector comprises a bottom electrode, a substrate, a buffer layer, an epsilon-phase gallium oxide layer and a top electrode which are arranged from bottom to top, the buffer layer is nickel oxide; the substrate is a silicon substrate; the top electrode and the bottom electrode are used for applying bias voltage to realize polarization deflection of the epsilon-phase gallium oxide layer; the buffer layer is nickel oxide (111), and the thickness of the buffer layer is 1-50 nm. The method has the advantages that technical means such as doping, surface treatment or high-temperature annealing do not need to be introduced into the epsilon-phase gallium oxide thin film; positive and negative bias voltages are applied to the ferroelectric thin film material, and the electric dipoles are arranged along the direction of an electric field, so that the current regulation of a depolarization field on the device is realized, and the performance of the detector is effectively improved.

The invention relates to a preparation method of TiO2 and TiO2 / ZnO heterojunction based on a hollow structure and application of the TiO2 and TiO2 / ZnO heterojunction in an ultraviolet detector, the hollow structure TiO2 is a TiO2 hollow sphere, a TiO2 hollow cube and a TiO2 hollow dodecahedron, the hollow heterostructure is composed of the hollow structure TiO2 and a ZnO nanorod, the ZnO nanorod grows on the surface of the TiO2 hollow structure, and the whole ZnO nanorod is hedgehog-shaped; the prepared hollow-structure TiO2 and TiO2 / ZnO heterojunction is coated on a conductive surface of FTO conductive glass to prepare a working electrode, the working electrode is connected with a counter electrode through a heat sealing film, electrolyte is injected into an internal cavity to obtain the ultraviolet detector with high detection performance, and the ultraviolet detector is suitable for the field of ultraviolet detection. The method adopted by the invention has the advantages of simplicity in operation, low cost and high universality, different hollow-structure TiO2 and hedgehog-shaped TiO2 / ZnO heterojunctions such as spherical, cubic and dodecahedron heterojunctions are synthesized, an ultraviolet detector with a self-energy-supply characteristic is further prepared, and the application of a TiO2 nano material in the field of photoelectric detection is expanded.

The present invention discloses a SiC / Ga2O3 heterojunction single-photon ultraviolet detector and a method for fabricating the same. The method comprises: preparing a device functional layer and etching to form a mesa structure with an angle; depositing a first passivation layer on the upper surface of the mesa structure; etching the first passivation layer and an n+-type Ga2O3 epitaxial layer to form a photosensitive window; depositing Ni / Au metal on the upper and lower surfaces of the device, performing ohmic contact self-alignment, and then performing ohmic contact transparency treatment to form an anode transparent ohmic contact within each photosensitive window and a cathode transparent ohmic contact on the lower surface of the device; forming an anode metal electrode on the upper surface of the anode transparent ohmic contact located on the sidewall of each photosensitive window; forming a second passivation layer on the upper surface of the anode transparent ohmic contact within each photosensitive window, and forming a cathode metal electrode on the lower surface of the cathode transparent ohmic contact. The present invention solves the problem of poor device performance caused by using a single SiC material to fabricate single-photon ultraviolet detectors.

The invention provides a method for detecting taurine in magnesium acetyltaurate, which comprises the following steps: (1) derivatization treatment: carrying out derivatization reaction on a derivatization reagent and magnesium acetyltaurate containing taurine under an alkaline condition to obtain a derivatization product; (2) detection: detecting the derivatization product in the step (1) by adopting a high performance liquid chromatography-ultraviolet detector; wherein the derivatization reagent is selected from the group consisting of 2, 4-dinitrofluorobenzyl cyanide. The determination method has the advantages of high sensitivity, good specificity, simple operation, high accuracy, good reproducibility, good stability and low cost, improves the quality standard of taurine detection in magnesium acetyltaurate, can strictly control the quality of taurine in magnesium acetyltaurate, ensures the safety and reliability of magnesium acetyltaurate, and has a wide application prospect. The practical significance is realized.

The application discloses a method for detecting low-concentration urea in reclaimed water and a continuous online monitoring device, and belongs to the technical field of water quality monitoring equipment. The method comprises the following steps: adding sulfuric acid solution into a water sample to be detected to adjust pH to 3-5, then adding sodium dodecyl sulfonate and ethylenediaminetetraacetic acid to form a urea stable system; concentrating the water sample by vacuum distillation under the condition of 60-80 DEG C; adding a chromogenic reagent and a stabilizing reagent into the concentrated water sample, and reacting under the condition of 65-75 DEG C for 10-15 minutes; and determining the absorbance by using an ultraviolet detector and calculating the urea content. The application further provides a continuous online monitoring device for realizing the method. The application can accurately detect low-concentration urea below 80 mu g / L, the single detection time is less than 30 minutes, the anti-interference capability is strong, and full-process automatic control is realized.