1703 results about "Ultraviolet detectors" patented technology

The invention relates to a self-walking underground cable failure detection intelligent instrument which comprises an underground cable hot failure infrared detector 1. an underground cable partial discharge ultraviolet detector 2. an underground cable insulation aging electric field distribution detector 3. an underground cable self-walking patrolling robot 4 and an underground cable failure predication system 5. The self-walking underground cable failure detection intelligent instrument realizes the comprehensive detection and prediction on the underground cable failure based on the multi-sensor detection, multi-information amalgamation, and movable intelligent patrolling mode, has high degree of automation as well as full-size, intuitive and reliable information, and greatly lightens the working load and working intensity of personnel.

The subject of the Invention is the method of fabrication of nitride semiconductor A3B5 such as GaN, AlN, InN or their solid solutions, characterized by p- or n-type conductivity, high intensity of emitted light and high structural quality. The semiconductors obtained by this method are applied in the construction of light emitting devices, light detectors and electric current amplifiers such as for example: highly efficient blue and green light diodes, laser diodes and high power lasers, ultraviolet detectors and high temperature field transistors. The method according to the Invention is characterized by the fact that the homoepitaxial or heteroepitaxial layers of nitride semiconductors A3B5 are deposited on the conductive substrate after the introductory processing or isolating substrate, and after that the so prepared structures are located in high pressure diffusional chamber filled with the one or multi-component gas, compressed to pressure in the range 1000-20000 bar, and annealed in the temperature 1000-1800 ° C. in the prescribed time in the presence of the dopant from the external and / or internal source.

The invention discloses a photoelectric combined detection method aiming at a mutual inductor of a distribution network. The photoelectric combined detection method is to use various methods of a mutual inductor comprehensive detector, an ultraviolet detector, an infrared temperature measurer, a partial discharge detector, X-ray perspective detection and the like in a combined manner to meet with the requirements of judging the properties and positions of defects of the mutual inductor exactly. The photoelectric combined detection method aiming at the mutual inductor of the distribution network not only can determine whether a fault or a defect exists inside a PT (Potential Transformer) and a CT (Current Transformer) directly and judge the property of the fault or the defect in time, but also can further position the fault or the defect exactly.

The invention relates to an ultraviolet detector, in particular to a visible-blind ultraviolet detector based on a Beta-Ga2O3 / SiC heterojunction thin film and a fabrication method of the visible-blind ultraviolet detector. According to the fabrication method, a layer of Beta-Ga2O3 thin film is deposited on an n-type 6H-SiC substrate by a laser molecular beam epitaxial technique, and then a layer of Ti / Au thin film is deposited on the n-type 6H-SiC substrate and the Beta-Ga2O3 thin film through a mask by a radio frequency magnetron sputtering to be used as an electrode. The fabricated visible-blind ultraviolet detector has the advantages of stable performance, response sensitivity, small dark current and high potential application; and moreover, the fabrication method has the characteristics of high process controllability, simplicity in operation, high universality, restorability of repeated test and the like, and has great application prospect.

The invention belongs to the technical field of semiconductor film preparation, and particularly relates to a preparation method of a zinc-oxide nanorod array film. The technical scheme adopted by the invention is as follows: the preparation method comprises the following steps of: (1) on the basis of adopting height (001)-oriented ZnO as a seed layer, putting the ZnO seed layer into an aqueous solution of zinc nitrate (Zn(NO3)2), polyethyleneimine (PEI) and hexamethylenetetramine (HMT) for epitaxial growth to obtain a (001) preferred-orientation ultralong ZnO nanorod array film; (2) carrying out fast annealing treatment on the film, and improving the photoluminescence performance of the ZnO array film. The technology has the advantages that the continuous growth of the ZnO nanorod at the temperature higher than 100 DEG C can be realized; due to the high-temperature growth condition, the crystallization quality of the nanorod is improved, the internal defects are obviously reduced; the zinc-oxide nanorod array film has excellent photoelectric performance, and is more conductive to being applied in photoelectric devices such as dye-sensitized solar batteries, ultraviolet detectors, field-effect transistors, light-emitting diodes and nanogenerators.

The invention discloses a method for preparing a titanium dioxide ultraviolet photoelectric detector, relates to a semiconductor photoelectric detection device, and provides a titanium dioxide ultraviolet photoelectric detector with low dark current and a preparation method thereof. The detector has a metal-semiconductor-metal structure, and comprises an insulating substrate, a polycrystal TiO2 film deposited on the insulating substrate by using magnetron sputtering technology and an interdigital metal electrode prepared on the TiO2 film by using magnetron sputtering or electron beam evaporation technology from the bottom to the top. The high-quality polycrystal TiO2 film is deposited by adopting optimized sputtering process parameters, and the deposited film has ideal chemical proportion and high compactness and crystallinity. The MSM structural ultraviolet detector prepared by using the film as a matrix has the advantages of high response degree, low dark current, high ultraviolet visible suppression ratio and the like. The preparation method has simple process and low cost; if the detector is manufactured on a Si-based substrate, the method can be compatible with the mature Si process; and the method is favorable for photoelectric integration and easy for industrialization.

The invention discloses an aluminum gallium nitrogen-based solar blind ultraviolet detector and a production method thereof. The aluminum gallium nitrogen-based solar blind ultraviolet detector comprises a sapphire substrate, an A1N nucleating layer, an A1<x1>Ga<1-x1>N buffer layer, an n-type A1<x2>Ga<1-x2>N layer, an undoped i-type A1<x3>Ga<1-x3>N absorbing layer, an n-type A1<X4>In<y1>Ga<1-x4-y1>N / A1<x5>In<y2>Ga<1-x5-y2>N superlattice separating layer, an undoped i-type A1<x6>Ga<1-x6>N multiplication layer, a p-type A1<x7>Ga<1-x7>N layer and a p-type GaN layer which are sequentially arranged from the bottom up. An n-type ohmic electrode leads from the n type A1<x2>Ga<1-x2>N layer, and a p type ohmic electrode leads from the p type GaN layer. According to the arrangement, the absorbing layer and the multiplication layer are separated by the multi-cycle n type A1<X4>In<y1>Ga<1-x4-y1>N / A1<x5>In<y2>Ga<1-x5-y2>N superlattice separating layer, the electric field of the multiplication layer is increased, thus allowing uniform avalanche multiplication to occur under the high electric field, and avalanche multiplication factors of the solar blind ultraviolet detector are increased.

The invention belongs to the material and component field of organic ultraviolet detector comprising a substrate, a transparent conductive film, an electronic donor layer, a mixing layer, an electronic receptor layer, and an electronic collection electrode layer, characterized in that: the thin mixing layer of electronic donor and electronic receptor is disposed between the electronic donor layer and the electronic receptor layer, and the absorption band of the used functional material is located in the ultraviolet region of 300-400nm, the UV light with center wavelength of 365nm are used as UV light source. The organic light detector is organic photovoltaic diode which is sensitive to ultraviolet light and not sensitive to the visual light, can be applicable in the science, industry and business field with simple fabricating process, cheap material and component, small volume, and convenience for carrying, therefore tending to be used widely.

The invention discloses an ultraviolet photoelectric microsensor device used for monitoring water quality on line, which comprises an ultraviolet light source, an ultraviolet detector, a data acquisition and transmission module, a bracket and a seal cover. A water flow sample to be monitored is placed between the ultraviolet light source and the ultraviolet detector, wherein the ultraviolet light source and the ultraviolet detector are fixed on the bracket, two ends of the ultraviolet light source are connected with a power supply through a lead, and two ends of the ultraviolet detector are connected with the data acquisition and transmission module through a lead. The ultraviolet photoelectric microsenser device is characterized in that the ultraviolet light source, the ultraviolet detector and the stand are encapsulated in the seal cover, the ultraviolet detector comprises a GaN based Schottky type ultraviolet detector, and a response window of the ultraviolet detector corresponds to the center wavelength of an LED; and the ultraviolet light source consists of 3-7 ultraviolet LEDs with the wavelength covering a region ranging from 200nm to 400nm. The device has small volume and low power consumption, can timely and accurately monitor the change conditions of environmental pollution indexes (such as TOC (Total Organic Carbon), COD (Chemical Oxygen Demand) and the like), and has wide application prospect.

The invention discloses a graphene / boron nitride / zinc oxide ultraviolet detector; the ultraviolet detector is from bottom to top sequentially provided with a back electrode, a zinc oxide layer, a boron nitride layer, a graphene layer and a front electrode. The preparation method thereof comprises the following steps: firstly making the back electrode on one side of a clean zinc oxide; then transferring the boron nitride to the other side of the clean zinc oxide; and then transferring the graphene onto the boron nitride; finally making the front electrode on the graphene, thereby obtaining the graphene / boron nitride / zinc oxide ultraviolet detector. The disclosed graphene / boron nitride / zinc oxide ultraviolet detector uses the high light transmission property of the graphene material, the excellent insulativity and light transmission properties of highly conductive hexagonal boron nitride, in combination with the excellent ultraviolet detection property of the zinc oxide, to make the ultraviolet detector with simple technology, low cost, and high responsivity.

The invention discloses a silicon-based ultraviolet photoelectric detector based on graphene. The silicon-based ultraviolet photoelectric detector comprises an epitaxial silicon substrate, an isolation layer, a silicon window, a top electrode and a graphene thin film which are sequentially laminated, and the epitaxial silicon substrate is provided with a heavily-doped layer and a light-doped layer. The fabrication method comprises the following steps of sequentially planting the isolation layer and the top electrode on the epitaxial silicon substrate after the epitaxial silicon substrate is fabricated, etching the silicon window, and moving the graphene thin film in the silicon window and the top electrode for complete fabrication. An ultra-shallow junction design formed by a graphene / silicon structure is used for improving ultraviolet wave band response; the surface recombination is reduced by epitaxial growth of a thin silicon light-doped structure on an upper surface of the heavily-doped bottom layer, the ultraviolet response is effectively improved, the visible light response is suppressed, and the spectral selectivity detection is achieved; and with the adoption of the high-conductivity graphene thin film, extra ultraviolet light is absorbed, and the ultraviolet sensitivity and the response speed can be improved and are approximate to or even exceed a theoretical performance limit of a traditional silicon-based ultraviolet detector.

The utility model discloses a high efficiency liquid phase chromatogram method which can detect the content of various polyphenolic compounds inside fruits at the same time by adopting liquid phase chromatogram containing ultraviolet detector and reversed-phase bonded silica chromatographic column; organic solvent mobile phase A and acidic aqueous mobile phase B with certain Ph value are adopted as gradient eluant. The utility model quantitatively detects various polyphenolic compounds inside fruits at the same time only on normal high efficiency liquid phase chromatogram. The utility model builds a method of detecting the content of various polyphenolic compounds inside fruits which combines microwave extraction and high efficiency liquid phase chromatogram. The utility model has the advantages of advanced and accurate method, simple and quick sample processing; meanwhile, Carrez reagent is used as scavenging agent of fruits sample and is firstly used as fruit polyphenols testing.

The invention particularly relates to a high-performance ultraviolet photoelectric detector with low surface state density and a preparation method thereof, wherein the detector takes ultrathin quartz as a substrate, takes a TiO2-ZrO2 composite oxide thin film as a matrix, takes Au, Pt or Ni as a metal interdigital electrode and takes Al or Ag as a light reflection layer. The preparation method comprises the following steps: adopting the sol-gel technology for preparing the TiO2-ZrO2 composite oxide thin film with different mixture ratios, and growing a compact nano-thin film on the ultrathin quartz substrate; further processing the thin film via a high-strength ultraviolet cleaning machine; then performing magnetron sputtering, standard photoetching and stripping technology for forming the interdigital electrode in a certain shape; and finally performing evaporation of the reflection layer on the back surface of an ultrathin quartz plate for improving the light absorption efficiency. By adopting the different mixture ratios of the TiO2-ZrO2 composite oxide thin film, the response peak value of the detector can be adjusted within the ultraviolet waveband range from 200nm to 350nm.

A detection method simultaneously detects residue of multiple synthetic antibacterial agents in aquatic products by a high performance liquid chromatography. The synthetic antibacterial agents mainly comprise sulfadiazine SD, sulfamerazine SMR, sulfadimidine SDD, sulfadimethoxine SDM, furazolidone FZD, oxolinic acid OXA, nalidixic acid NAA and the like. The multiple synthetic antibacterial agents in an aquatic product sample are extracted by acetonitrile, degreased by normal hexane, concentrated, purified by a solid phase extraction column (alumina neutral) or a C18 solid phase extraction column, analyzed by a liquid chromatograph, detected by an ultraviolet detector, and quantified by an external standard method. The method can quickly, sensitively and accurately detect multiple target compounds to greatly reduce detection cost and shorten detection time.

The invention discloses an ultraviolet focal plane readout circuit and method based on pixel level analog-to-digital conversion. The ultraviolet focal plane readout circuit comprises a front end electric charge integrator, a pixel level analog-to-digital conversion module, a row / column selecting control circuit, an induction amplifier and an output level buffering device, wherein the front end electric charge integrator is used for integrating a weak photo-generated current of an ultraviolet detector so as to convert the current into a voltage; the pixel level analog-to-digital conversion module can quantitatively simulate the voltage in a pixel, and a quantitative result can be latched; each unit on a focal plane can be selected by the row / column selecting control circuit; the induction amplifier inducts and amplifies the quantitative result in the pixel and sends the amplified quantitative result into an output bus; the output level buffering device is used for increasing output driving capacity of a circuit, and output signals are sequentially output in a serial mode. According to the readout circuit, signals of the ultraviolet detector are directly converted into digital signals, interference of noise to the signals is reduced by reducing a simulation signal transmission path, on-chip analog-to-digital conversion is achieved, the signal to noise ratio of an ultraviolet focal plane chip is effectively improved, and the readout circuit can be applied to detection and imaging of the weak ultraviolet signals.

The present invention relates to an ultraviolet detector and manufacture method thereof, in which a buffer layer is formed on a baseplate and a P-type GaN layer is formed on the baseplate by using epitaxial method. By availing ion-distribution-and-vegetation technology, a first N-type GaN layer is vegetated and invested in the P-type GaN layer by distributing and vegetating Si+ ions in that layer, and a second N-type GaN layer having a thicker ion concentration is invested in the N-type GaN layer. Finally, an annular and a circular metallic layer are formed between the P-type GaN layer and the first N-type GaN layer as well as inside the second N-type GaN layer, respectively, to serve for respective ohmic contact layers. The present invention is characterized in that an incident light can project upon a depletion layer of the GaN planar structure to have the detection efficiency significantly improved.

The invention discloses a black phosphorus / graphene heterostructure-based ultraviolet detector and a production method thereof. The detector comprises a substrate, an insulating layer and a black phosphorus / graphene heterostructure, wherein the insulating layer covers the substrate; and the black phosphorus / graphene heterostructure is formed by stacking black phosphorus and graphene and is located on the insulating layer. The disadvantages of the black phosphorus are compensated by the black phosphorus / graphene heterostructure; and the performance of the detector can be improved under the premise of not affecting the advantages of the black phosphorus.

The invention belongs to the technical field of photoelectric detection, and particularly discloses an ultraviolet detector manufacturing method which is achieved by gradient assembly of multi-size zinc oxide quantum dots in multiple layers of graphene. According to the ultraviolet detector manufacturing method, structure and performance advantages of the ZnO quantum dots and the graphene are combined, and collochemistry is adopted as the basic method to obtain the ZnO quantum dots with different sizes, and the band gaps of the ZnO quantum dots vary from the near ultraviolet area to the deep ultraviolet area; wet chemistry is adopted to prepare single-layer oxidized graphene, carboxyl functional group modification is then carried out on the surface of the single-layer oxidized graphene so that ZnO quantum dots with a single size can be suitable for being assembled on the surface of the single-layer oxidized graphene, and then the ZnO quantum dots (QD) with different sizes are used as active materials of ultraviolet response to construct a multi-layer sandwich type structure. According to the ultraviolet detector manufacturing method, gold, or platinum or ITO is used as electrode materials, a horizontal distribution type strip-shaped or itnerdigital electrode structure is designed, and then an ultraviolet detector is obtained and inter-band absorption response from near ultraviolet to deep ultraviolet is achieved.

Structure of front irradiation type detector includes following parts setup on (0001) sapphire substrate: GaN buffer layer, or AlN, AlUGa1-UN (0.1 smaller than U smaller than 0.9) buffer layer; AlN / AlZGa1-ZN (smaller than or equal to Z smaller than 0.8) distributing Bragg reflection (DBR) bottom mirror; n-AlYGa1-YN / i-AlXGa1-XN / p-AlYGa1-YN resonant cavity in use for p-i-n type, or n-AlYGa1-YN / i-AlXGa1-XN resonant cavity in use for Schottky M-S, M-S-M types, where 0<= X<0.8, 0<=Y<0.9; AlN / AlZGa1-ZN (0 smaller than or equal to Z smaller than 0.8) distributing Bragg reflection top mirror. Reflector in oxide dielectric layer can be used instead of one from bottom mirror or top mirror. Electrodes are setup at two ends of the resonant cavity so as to constitute GaN based resonance enhanced ultraviolet detector.

The invention provides an amorphous Ga2O3 solar-blind ultraviolet detector, and a preparation method and an application thereof. The solar-blind ultraviolet detector comprises a substrate, an amorphous Ga2O3 active layer deposited on the surface of the substrate, and electrodes arranged on the surface of the amorphous Ga2O3 active layer. The solar-blind ultraviolet detector is characterized in that a response speed of the solar-blind ultraviolet detector is less than 1 second. The preparation method comprises the step of introducing oxygen into a vacuum chamber during the deposition process. Through adopting a micro-oxygen flow regulation method, high-purity oxygen is introduced during film growth, resulting in the unexpected increase of the response speed of the device, and the fastest response speed can be 19.1 microseconds, which is the fastest response speed of the amorphous Ga2O3 solar-blind ultraviolet detector reported so far.

A solution for evaluating a sample gas for a presence of a trace gas, such as ozone, is provided. The solution uses an ultraviolet source and an ultraviolet detector mounted in a chamber. The chamber can include reflecting walls and / or structures configured to guide ultraviolet light. A computer system can operate the ultraviolet source in a high power pulse mode and acquire data corresponding to an intensity of the ultraviolet radiation detected by the ultraviolet detector while a sample gas is present in the chamber. Using the data, the computer system can determine a presence and / or an amount of the trace gas in the sample gas.

The invention discloses an ultraviolet detector. A gallium oxide / zinc oxide based core shell nano-rod structure layer is arranged between a quartz substrate and a transparent contact electrode of the detector, wherein the contact electrode is an ITO conductive thin film which is deposited on a glass substrate and is provided with a 0.2cm channel; the gallium oxide / zinc oxide based core shell nano-rod structure layer is composed of a ZnO nano-array seed layer and a beta-Ga2O3 layer which grows on the surface of the ZnO nano-array seed layer, the beta-Ga2O3 layer is composed of a nano beta-Ga2O3 crystal with a spherical shape, and the average size of the nano beta-Ga2O3 crystal is 30nm. The core shell nano-rod structure layer can be used for preparing a beta-Ga2O3 / ZnO core shell nano-rod structure through the steps of taking the ZnO nano-array as a carrier, adopting gallium nitrate and hexamethylenetetramine as materials, firstly growing a GaOOH precursor on the surface of ZnO by using a low-temperature water solution, and then implementing high-temperature heating. The preparation method disclosed by the invention is simple in process and low in reaction temperature; and in addition, prepared products have very good photoresponse to the ultraviolet light.

A filter for electromagnetic radiation including one or more dielectric spacer regions and one or more reflective regions integrated on a semiconductor substrate, the semiconductor substrate including a semiconductor photodetector, such that the filter transmits ultraviolet radiation to the semiconductor photodetector, the ultraviolet radiation having a range of wavelengths, and the filter suppresses transmission of electromagnetic radiation, having wavelengths outside the range of wavelengths, to the semiconductor photodetector.

The invention provides an image and multi-band infrared-ultraviolet compound fire disaster detection system and method. The system comprises a digital signal processor, an image sensor and / or a multi-band infrared detection channel and / or a multi-band ultraviolet detection channel, wherein the digital signal processor is connected with the image sensor, the multi-band infrared detection channel and the multi-band ultraviolet detection channel respectively. An image detector, a multi-band infrared detector and a multi-band ultraviolet detector are compounded together, the detection conditions of other two types of detectors are inquired when a fire disaster signal is transmitted by one type of detector, and an alarm signal is transmitted only when the total fire disaster occurrence probability detected through three types of detectors is higher than a preset threshold value, so that the reliability of the detection system on fire disaster detection is improved.

The invention provides a semiconductor device, comprising a substrate, a gate electrode on the substrate, a gate insulating layer on the gate electrode, an amorphous oxide semiconductor on the gate insulating layer and source and drain metal electrodes on the amorphous oxide semiconductor at two sides of the gate electrode, and the basic structure is a TFT ultraviolet detector. The semiconductor is an amorphous oxide semiconductor with a broad bang [band] gap (>3.0eV), and the material component can be a ZnO semiconductor doped with In, specifically comprising InGaZnO, InZanO, HfInZnO, TaInZnO, ZrInZnO, YInZnO, AlInZnO and SnInZnO; wherein the atomic counting ratio of [In] to a sum of [In] and [a third metal] is from 35% to 80%, and the atomic counting ratio of [Zn] to a sum of [In] and [Zn] is from 40% to 85%. Preferable atomic counting ratio of elements is that the ratio of [In], [the third metal], [Zn], and [O] is 1:1:1:1 or 1:1:1:2 or 2:2:2:1, or 1:1:1:4, etc. In addition, the semiconductor can be of a material such as In2O3, ZTO, ITO, ZnO, SnOx in an amorphous state. The TFT ultraviolet detector based on the invention has advantages of high efficiency, low cost and evenness for a large area due to the adoption of the amorphous oxide semiconductor.

The invention relates to a preparation method of a solar blind type ultraviolet detector based on Ga2O3 / CuAlO2 heterojunction. The method is characterized in that a layer of p-CuAlO2 thin film is deposited on a quartz (SiO2) substrate through a radio frequency magnetron sputtering technology; then, a layer of n-Ga2O3 thin film is deposited on the p-CuAlO2 thin film by using a mask plate through the radio frequency magnetron sputtering technology; the area of the n-Ga2O3 thin film is half of the area of the p-CuAlO2 thin film; finally, a layer of Ti / Au thin film is deposited on the p-CuAlO2 and n-Ga2O3 thin films by the radio frequency magnetron sputtering technology and is used as an electrode. The preparation method has the advantages that the prepared solar blind type ultraviolet detector has stable performance, sensitive response, small dark current and wide application range; in addition, the preparation method has the characteristics of high process controllability, simple operation, good universality, recoverability during repeated test and the like; great application prospects are realized.

The invention relates to an ultraviolet detector, in particular to an ultraviolet detector with high spectral selectivity and high sensitivity and a preparation method of the ultraviolet detector. A beta-Ga<2>O<3> film is deposited on an n-type 4H-SiC substrate through a laser molecular beam epitaxy technique; and a Ti / Au film is deposited on the n-type 4H-SiC substrate and the beta-Ga<2>O<3> film for use as an electrode by a mask through a radio-frequency magnetron sputtering technique. The ultraviolet detector has the advantages that the prepared ultraviolet detector has stable performance, has high selectivity and high sensitivity on an ultraviolet spectrum with a specific wavelength, is low in dark current, and can be applied to fire alarm, high-voltage line corona and detection of the spectrum with the specific wavelength; furthermore, the preparation method has the characteristics of being high in process controllability, simple in operation, good in universality and the like and has a great application prospect; and a repeated test has recoverability.

The invention discloses a transparent flexible ultraviolet detector and simultaneously discloses a preparation thereof. The transparent flexible ultraviolet detector comprises a transparent plastic substrate, a ZnO-based active layer is deposited on the surface of the transparent plastic substrate, and transparent interdigital electrodes are arranged on the surface of the ZnO-based active layer; and the transparent plastic substrate is a polyethylene terephthalate film, a polyethylene naphthalate film, a polysulfone resin film or an organic glass film. The invention realizes the transparency and flexibility of the ultraviolet detector and broadens the application scope of the ultraviolet detector. In addition, the whole preparation process of the ultraviolet detector is completed at the room temperature, the process flow is simple, the ZnO material resources are rich and non-toxic, and the preparation process is suitable for industrial production.

The invention discloses an ultraviolet photo-detector structure based on a TiO2 / ZnO nano heterogeneous composite structure. The bottommost layer of the ultraviolet photo-detector structure is made of a substrate material, inter-digital electrodes are arranged on the bottommost layer; the bottommost layer is covered by a ZnO thin film; ZnO nanorods are arranged on the thin film; and the surfaces of the nanoroads are of TiO2 nanostructures. The invention also discloses a preparation method of the ultraviolet photo-detector. The preparation method comprises the following steps: (1) plating metal electrodes on the substrate thin sheet to form the inter-digital electrodes; (2) plating the ZnO thin film; (3) synthesizing a ZnO nanorod array; and (5) forming the TiO2 nanostructures on the surfaces of the ZnO nanorods. According to the ultraviolet photo-detector, the TiO2 nanostructures are introduced while ultrahigh current gain of the ZnO ultraviolet detector is kept, the influence of a ZnO surface oxygen cavity trap state can be eliminated by forming a heterogeneous junction, meanwhile, carrier separation is quickened and composition is reduced, the sensitivity and the photocurrent gain of the detector are certainly and obviously improved, and in addition, the chemical stability of the detector is obviously improved because of wrapping of TiO2.

An ultraviolet detector comprises a metal tubular member which hermetically encloses an anode and a cathode therein and is filled with a discharged gas introduced therein from a metal exhaust tube. After the anode and the cathode are enclosed within the tubular member, the ultraviolet detector can be made without being subjected to any glass fusing process. Accordingly, the inside of the sealed vessel V1 can be prevented from being contaminated with fluorine, whereby the ultraviolet detector with stable characteristics can be provided.