A method for fabricating a lateral photoelectrochemical solar-blind
ultraviolet photodetector belongs to the field of
detector fabrication technology. The method involves: covering a portion of a conductive substrate with a
mask, and fabricating a photosensitive material on the uncovered portion; removing the
mask, fabricating a counter
electrode on the exposed portion of the conductive substrate, and drilling a hole at the counter
electrode location to penetrate the
electrode and substrate for
electrolyte injection; preparing a high-transparency
quartz sheet, and bonding the high-transparency
quartz sheet to the above structure using a 50-60 μm thick
sarin membrane; subsequently injecting
electrolyte through the hole on the counter electrode, and then sealing the hole to form a lateral PEC-type
photodetector. In this invention, the PEC
photodetector has the photoanode and counter electrode on the same side, i.e., arranged laterally, with the light-incident surface being high-transparency
quartz. Compared to detectors using FTO as electrodes, it can achieve a solar-blind
ultraviolet detector. Compared to the inverted structure with
platinum as the counter electrode on quartz, it has a larger incident surface, higher light
absorption efficiency, and higher detection efficiency.