Amorphous Ga2O3 solar-blind ultraviolet detector and preparation method and application thereof

Abstract

The invention provides an amorphous Ga2O3 solar-blind ultraviolet detector, and a preparation method and an application thereof. The solar-blind ultraviolet detector comprises a substrate, an amorphous Ga2O3 active layer deposited on the surface of the substrate, and electrodes arranged on the surface of the amorphous Ga2O3 active layer. The solar-blind ultraviolet detector is characterized in that a response speed of the solar-blind ultraviolet detector is less than 1 second. The preparation method comprises the step of introducing oxygen into a vacuum chamber during the deposition process. Through adopting a micro-oxygen flow regulation method, high-purity oxygen is introduced during film growth, resulting in the unexpected increase of the response speed of the device, and the fastest response speed can be 19.1 microseconds, which is the fastest response speed of the amorphous Ga2O3 solar-blind ultraviolet detector reported so far.

Description

technical field [0001] The invention relates to the technical field of electronic devices and photoelectric detection, in particular to an ultrafast response amorphous Ga 2 o 3 Solar-blind ultraviolet detector and its preparation method and application. Background technique [0002] Since the deep ultraviolet light (200-280nm) in the solar-blind band can be almost completely absorbed by the earth’s ozone layer, the background radiation in the atmosphere is close to zero. Low noise and high sensitivity. The two unique advantages of low noise and high sensitivity make solar-blind ultraviolet photodetectors have a very wide application prospect in civilian and military fields, such as space communication, flame monitoring, biomedicine, missile guidance and ozone monitoring, etc. field. [0003] Solar-blind UV detectors are often based on wide-bandgap semiconductor materials. Solar-blind light can excite valence-band electrons in wide-bandgap semiconductors to transition to...

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Problems solved by technology

[0004] Existing about Ga 2 o 3 In the reports of solar-blind photodetectors, some are based on nanostructures and some are based on thin films. However, the preparation and synthesis process of nanomaterials is not easy for most researchers to master, and the purity of the source materials is not easy to improve, and the structure repeatability is poor. , so the film type still dominates

In the prior art, in order to obtain high crystalline quality Ga 2 o 3 Thin films, the vast majority of researchers use single crystal substrates and high-temperature complex growth processes, such as molecular beam epitaxy, pulsed laser deposition and metal-organic chemical vapor deposition techniques, etc. The required high-temperature and high-vacuum conditions are expensive, which is not conducive to large-scale industrial applications, and it is impossible to realize the application of flexible solar-blind ultraviolet detection; Good suppression results in the capture and gradual release of photogenerated carriers, causing the device to produce a serious persistent photoconductivity (PPC) phenomenon, which is far from the key element of fast response speed in the basic requirements of the detector.

Although in existing reports, there are researches about changing the deposition temperature to control oxygen vacancies in amorphous gallium oxide (see OxygenDeficiency and Sn Doping of Amorphous Ga 2 o 3 [J]. Applied Physics Letters, 2016, 108, 022107.), but the amorphous gallium oxide film prepared at a moderate temperature (320-425°C) seriously deviates from the stoichiometric ratio, so that the optical band gap occurs relatively Large change (4~4.5eV), unable to meet the response of the sun-blind band

[0005] Combining the two main shortcomings of the above-mentioned high-temperature growth process and the serious PPC phenomenon in the prior art, it is urgent to develop a Ga 2 o 3 Solar-blind photodetector and preparation method thereof

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