405 results about "Gallium" patented technology

The method comprises the following steps: weighing an oxide precursor of metal indium, an oxide precursor of metal M, an ammonium salt and a lithium salt according to a chemical formula of indium-based halide, fully mixing, and calcining in an inert atmosphere to obtain the indium-based halide solid electrolyte. Forming an indium-based halide solid electrolyte through a solid-phase reaction; wherein M is selected from at least one of magnesium, calcium, strontium, barium, aluminum, gallium, indium, bismuth, scandium, yttrium, zinc, germanium, tin, lanthanum, cerium, samarium, gadolinium, holmium, erbium and ytterbium. The method can greatly simplify the synthesis process, reduce the raw material cost and realize industrial batch preparation.

The invention discloses a method for improving performance of rare earth permanent magnet sintered neodymium iron boron grain boundary diffusion, and belongs to the technical field of rare earth permanent magnet materials. The method comprises the steps that a low-melting-point metal layer and a diffusion layer containing heavy rare earth elements are sequentially formed on the surface of a clean sintered neodymium-iron-boron magnet, and then vacuum diffusion heat treatment and tempering treatment are conducted. Wherein the low-melting-point metal layer comprises at least one of copper, aluminum, gallium and tin or an alloy of the copper, the aluminum, the gallium and the tin; the heavy rare earth element comprises at least one of dysprosium, terbium, holmium and gadolinium. The low-melting-point metal layer is preferentially diffused and wets the grain boundary in the heat treatment process, heavy rare earth elements are promoted to be deeply and uniformly diffused towards the interior of the magnet along the grain boundary, so that a heavy rare earth-rich shell layer is formed outside main phase grains of the magnet, and the intrinsic coercive force is improved; meanwhile, the low-melting-point metal forms a strengthening phase at the grain boundary, the brittleness of the magnet after diffusion is improved, the surface corrosion phenomenon is restrained, and collaborative optimization of the comprehensive performance of the magnet is achieved.

The invention provides an impurity removal method of a gallium-rich solution for a gallium-based fluorescent powder precursor, and belongs to the field of preparation of gallium-based fluorescent powder precursors. The method comprises the following steps: adding an oxidizing agent into an initial gallium-rich solution to carry out a first reaction so as to remove organic impurities in the initial gallium-rich solution and obtain a first gallium-rich solution; adding a composite impurity removal reagent into the first gallium-rich solution to carry out a second reaction to remove impurity elements such as calcium, silicon and vanadium in the first gallium-rich solution so as to obtain a second gallium-rich solution; and adding a sulfide type reagent into the second gallium-rich solution to carry out a third reaction so as to remove copper and iron impurity elements in the second gallium-rich solution, thereby obtaining the gallium-rich solution for the gallium-based fluorescent powder precursor. According to the method, various key impurity elements such as organic matters, alkaline earth metals, metalloids and heavy metals are directionally and efficiently removed through the impurity removal logic of oxidation impurity breaking, synergistic precipitation and deep vulcanization, so that the total content of the key impurity elements in the gallium-rich solution is remarkably reduced.

The invention belongs to the technical field of tin plating materials, and relates to a tin plating plate with high sulfur resistance and a preparation method and application thereof. The tin-plated plate with high sulfur resistance comprises a first passivation layer, a first tin-plated layer, a first multi-component alloy layer, a tin-plated substrate layer, a second multi-component alloy layer, a second tin-plated layer and a second passivation layer which are arranged in sequence, the surface, away from the first tin plating layer, of the first passivation layer is an inner coating surface; the surface, away from the second tin plating layer, of the second passivation layer is an outer coating surface; the arithmetic mean roughness of the inner coating surface is 0.4-0.5 [mu] m, the profile skewness is 0-0.3, and the profile kurtosis is 2.5-3; the arithmetic mean roughness of the outer coating surface is 0.6-0.7 [mu] m, the profile skewness is 0-0.3, and the profile kurtosis is 2.5-3; the first multi-component alloy layer and the second multi-component alloy layer respectively and independently comprise gallium; according to the tin plate with the high sulfur resistance, the binding force between the film layers is high, and the deformation resistance and the sulfur resistance of the film layers are excellent.

The invention discloses a neodymium-iron-gallium double-alloy heavy-rare-earth-free 54H sintered neodymium-iron-boron magnet and a preparation method thereof, and relates to the technical field of neodymium-iron-boron magnet preparation, and the neodymium-iron-gallium double-alloy heavy-rare-earth-free 54H sintered neodymium-iron-boron magnet comprises the following preparation raw materials: 170-175 kg of PrNd (praseodymium-neodymium alloy), 25-30 kg of BFe (iron white copper), 1-5 kg of Co (cobalt), 0.1-2 kg of Cu (copper), 1-5 kg of Zr (zirconium), 0.1-1 kg of Ga (gallium) and 380-420 kg of Fe (iron). According to the neodymium-iron-gallium double-alloy heavy-rare-earth-free 54H sintered neodymium-iron-boron magnet and the preparation method thereof, the 54H sintered neodymium-iron-boron magnet is prepared through a double-alloy technology with neodymium, iron and gallium as auxiliary alloy without adding dysprosium, terbium and other scarce type heavy rare earth elements, and performance optimization and cost optimization of the neodymium-iron-gallium double-alloy heavy-rare-earth-free 54H sintered neodymium-iron-boron magnet are achieved.

The invention discloses a method for deeply separating and extracting gallium, and belongs to the technical field of non-ferrous metallurgy. According to the method for deeply separating and extracting gallium, the problems that an existing adsorption material is generally poor in chemical stability, insufficient in selectivity and adsorption capacity and the like in a gallium-containing solution with high alkalinity and coexistence of multiple components are solved, and the gallium is deeply separated and extracted on the basis of the coordination characteristic of gallate ions. A covalent organic framework adsorption material with a directional recognition site and an ordered pore channel structure is designed and constructed. According to the material, an organic porous framework with high crystallinity and large specific surface area is constructed through dynamic covalent chemistry, and efficient and high-selectivity adsorption of gallate ions can be realized. The method is suitable for efficiently capturing and enriching gallium from a high-alkalinity complex solution, and a reliable technical solution with application prospects is provided for efficient recycling of gallium resources.

A method may include contacting a hydrocarbon-containing feed with a catalyst in a reactor to form an olefin-containing effluent, then at least partially separating the olefin-containing effluent from the catalyst. Passing the catalyst to a combustor and heating the catalyst by combusting a supplemental fuel. The supplemental fuel includes methane in an amount greater than or equal to 1 mol. %. Passing the catalyst from the combustor to the reactor, such that at least a portion of the catalyst continuously cycles between the reactor and the combustor. The catalyst includes from 0.1 wt. % to 10 wt. % of one or more metals chosen from gallium, indium, thallium or combinations thereof, from 5 ppmw to 1000 ppmw of one or more metals chosen from platinum, palladium, rhodium, iridium, ruthenium, osmium, or combinations thereof, from 100 ppmw to 30000 ppmw of chromium, and at least 85 wt. % support.

The invention discloses a device and a method for inhibiting crucible oxidation and raw material decomposition in gallium oxide single crystal growth, the device comprises a furnace body, an iraurita crucible, a thermal insulation layer, an induction coil, a lifting mechanism and the like, a temperature dynamic regulation and control system is arranged between the iraurita crucible and the thermal insulation layer; the temperature dynamic regulation and control system is used for monitoring the temperature distribution of the iridium crucible and the inner cavity in real time and regulating the heating frequency of the induction coil through feedback temperature; a melt decomposition monitoring system is arranged in the inner cavity close to the iraurita crucible and is used for detecting the gallium atom concentration and oxygen partial pressure change in the inner cavity in real time; and an atmosphere active adjusting system is also arranged in the furnace body. According to the device, the gallium oxide single crystal can be obtained, and the problems of crucible oxidation, melt decomposition and unstable crystal quality caused by a high-temperature environment can be solved; through dynamic monitoring and regulation, the oxidation and corrosion loss of the iraurita crucible is reduced, and meanwhile, the large-size and high-quality beta-Ga2O3 single crystal is obtained.

The invention discloses a gallium-cerium co-doped ITO target material and a preparation method thereof, and belongs to the field of transparent conductive oxide ceramic target materials, and the preparation method comprises the following steps: weighing indium oxide powder raw materials, tin oxide powder raw materials, gallium oxide powder raw materials and cerium oxide powder raw materials in proportion, and performing pretreatment; the raw material powder is subjected to independent ball milling till the raw materials reach the preset particle size; mixing the four kinds of slurry, and continuously performing ball milling to obtain uniform mixed slurry; adding a binder into the mixed slurry, and carrying out ball milling and mixing to form stable formed slurry; carrying out spray granulation on the formed slurry to obtain spherical precursor powder; pressing and forming the precursor powder to obtain a biscuit, then putting the biscuit into a sintering furnace, carrying out stepped sintering in an oxygen atmosphere, and naturally cooling to obtain the gallium-cerium co-doped ITO target material. According to the gallium-cerium co-doped ITO target material prepared by the method, the relative density is greater than or equal to 99.4%, the resistivity is less than or equal to 99.4%, and the three-point bending strength is greater than or equal to 230MPa.

The present application provides a kind of method for extracting metal gallium by vanadium extraction converter sludge, comprising the following steps: S1: vanadium extraction converter sludge is leached with leaching agent, and gallium leaching solution is obtained;S2: the gallium leaching solution of step S1 is extracted, and gallium-containing organic phase is obtained;S3: the gallium-containing organic phase of step S2 is back-extracted, and gallium-containing aqueous phase is obtained;S4: the gallium-containing aqueous phase of step S3 is treated to obtain gallium-containing precipitate, and the gallium-containing precipitate is dissolved in alkali to obtain gallium-containing alkali solution, which is treated by electrolysis to obtain metal gallium.The raw material for extracting gallium is unique, the gallium content is high, the gallium extraction process is short, the impurity removal effect is good, and the by-product produced has higher purity and better economic value.

The invention discloses a metalized diamond particle, a diamond / gallium-based liquid metal composite material and a preparation method thereof, and belongs to the field of composite thermal interface materials. The metallized diamond particle comprises a diamond particle, the surface of the diamond particle is coated with an immiscible alloy layer, the immiscible alloy layer contains a diffusion barrier component and a reaction wetting component, and the content of the diffusion barrier component in the immiscible alloy layer is not higher than 15 at% of the total content of the diffusion barrier component and the reaction wetting component; wherein the diffusion barrier component is one or more of tungsten, molybdenum and tantalum, and the reaction wetting component is one or more of silver and copper. The metallized diamond particles and the gallium-based liquid metal are combined to form the composite material, so that the diamond / gallium-based liquid metal composite material has more excellent thermal conductivity.

A catalyst includes from 5 ppmw to 1000 ppmw of platinum, from 0.1 wt. % to 10 wt. % of gallium, from 2300 ppmw to 30000 ppmw of iron, and at least 85 wt. % support, wherein the support includes one or more of alumina, silica, or combinations thereof.

A metal interconnect structure is doped with zinc, indium, or gallium using top-down doping processes to improve diffusion barrier properties with minimal impact on line resistance. Dopant is introduced prior to metallization or after metallization. Dopant may be introduced by chemical vapor deposition on a liner layer at an elevated temperature prior to metallization, by chemical vapor deposition on a metal feature at an elevated temperature after metallization, or by electroless deposition on a copper feature after metallization. Application of elevated temperatures causes the metal interconnect structure to be doped and form a self-formed barrier layer or strengthen an existing diffusion barrier layer.

The invention discloses a metallurgical solid waste all-component collaborative recovery and high-value utilization method, and belongs to the technical field of metallurgical resource recycling and green metallurgy. According to the method, blast furnace gas sludge, iron-manganese slag and vanadium extraction converter sludge are synergistically blended, and after briquetting and drying, reduction smelting is carried out in an inert atmosphere. Reducing the iron into molten iron; volatile metals such as zinc, indium and gallium are evaporated and enter flue gas, and gallium-indium alloy, crude zinc and residual ash are recovered in a graded manner through a multi-stage condensation system; the slag is subjected to acid leaching to enrich scandium, the leaching liquid is separated to extract vanadium, manganese and scandium, and the leaching slag is used for preparing low-carbon cement. According to the method, all-component collaborative recovery of valuable metals in various metallurgical solid wastes and building material utilization of residual solid wastes are realized, and the method has the advantages of high resource efficiency and environmental friendliness.

The invention discloses a method for preparing a two-dimensional material with a wrinkle structure under the assistance of liquid metal and application, and belongs to the field of micro-nano machining of two-dimensional materials. The method comprises the following steps: S1, covering the upper surface of a two-dimensional material with liquid metal gallium, and solidifying the liquid metal gallium under a cooling condition to obtain a metal gallium ingot loaded with a two-dimensional material nanosheet; s2, heating the metal gallium ingot loaded with the molybdenum disulfide nanosheet until gallium is molten, cooling and solidifying, and obtaining a two-dimensional material with a wrinkle structure after solidification; the method disclosed by the invention can be used for efficiently preparing the large-area and high-density wrinkle type two-dimensional material, is suitable for manufacturing devices such as high-performance sensors and has a wide application prospect.

The invention relates to the field of petroleum and natural gas exploration and development, in particular to a combined sealing structure and a telescopic pipe column system for oil field production, which comprise a combined sealing ring, and the combined sealing ring comprises a V-PAC sealing ring and a pre-cooling expansion sealing ring which are arranged in parallel; the outer circumferential face of the V-PAC sealing ring and the outer circumferential face of the pre-cooling expansion sealing ring are both coated with hydrogel. A cavity is formed in the precooling expansion sealing ring, and the cavity is filled with gallium-based liquid metal; the inner pipe is used for transmitting media, and the outer pipe plays a role in protection and supporting. The inner pipe is sleeved with the outer pipe, sliding fit is formed, stretching is achieved through sliding, and the effect of compensating for the length change of the pipe column is achieved. The inner pipe and the outer pipe are connected into a whole through the connected flanges and the connecting rods, and meanwhile the connecting rods play a sliding guiding and limiting role. The sealing ring combination is arranged between the inner pipe and the outer pipe, so that the sealing performance of the telescopic pipe column system is ensured.

The invention relates to the technical field of commercial spaceflight, in particular to a self-repairing liquid metal heat pipe for commercial spaceflight, which comprises a polyether-ether-ketone composite pipe, gallium bismuth zinc liquid gold, a micro-nano repairing film, a main hot runner, a pressure detector, a standby hot runner and an emergency plugging valve, and the main hot runner is an axial through channel in the polyether-ether-ketone composite pipe, and the standby hot runners are annularly and circumferentially arrayed along the inner wall of the main hot runner. Compared with heat conduction in the prior art, medium leakage is stopped through cooperative plugging in a damaged scene, so that the heat conduction efficiency is improved, and the service life of the heat exchanger is prolonged. And meanwhile, the detector is in signal linkage with the plugging valve, a heat transfer loop is rapidly switched in the case of serious damage, the continuous and stable thermal control function is achieved, and therefore the on-orbit operation life of a spacecraft is further prolonged.

A method for manufacturing a gallium nitride film includes the steps of placing a substrate so as to face a target containing nitrogen and gallium in a vacuum chamber, supplying a sputtering gas into the vacuum chamber, supplying a nitrogen radical into the vacuum chamber, generating a plasma of the sputtering gas by application of a voltage to the target, generating a gallium ion by a collision of an ion of the sputtering gas with the target, and stopping the application of the voltage to the target and depositing gallium nitride on the substrate. The gallium nitride is generated by a reaction of the gallium ion with a nitrogen anion which is generated by a reaction of an electron in the vacuum chamber with the nitrogen radical.

A catalyst suitable for dehydrogenation of hydrocarbons may include from 0.0005 wt.% to 0.1 wt.% of platinum, palladium, rhodium, iridium, ruthenium, osmium, or combinations thereof; from 0.1 wt.% to 10 wt.% of gallium, indium, thallium, or combinations thereof; from 0.1 wt.% to 5 wt.% of lanthanum, yttrium, or zirconium; at least 85 wt.% support, and from 0 wt.% to 0.001 wt.% cerium.

The present invention provides a catalyst for carbon dioxide reduction with which the conversion of carbon dioxide can be heightened.　The catalyst for carbon dioxide reduction is for reducing carbon dioxide by subjecting the carbon dioxide and hydrogen to a hydrogenation reaction, and includes iron, gallium, and zinc as catalytic metals, the iron being a main component of the catalytic metals.

The present application discloses a gallium oxide fin power device and a manufacturing method therefor. The manufacturing method for the gallium oxide fin power device comprises: providing, on a substrate, a mask provided with at least one nano-pattern window, and forming metal gallium on the substrate exposed from the nano-pattern window; performing first annealing treatment on the metal gallium, and during the first annealing treatment, adjusting the temperature of the first annealing treatment, so that the metal gallium located within the nano-pattern window diffuses on the substrate to form gallium droplets having a specified shape, radial size and thickness, wherein the shape of the orthographic projections of the gallium droplets is the same as the shape of the orthographic projection of a fin structure to be formed; and using the gallium droplets as a catalyst to epitaxially grow gallium oxide on the substrate exposed from the nano-pattern window, growing the gallium oxide longitudinally to form the fin structure, and manufacturing a field-effect transistor on the substrate provided with the fin structure.

The application provides a thin film with an epsilon phase gallium oxide hetero-epitaxial structure and a preparation method thereof, which comprises, from bottom to top, a substrate layer, a first gallium oxide layer and a second gallium oxide layer; the first gallium oxide layer is an epsilon phase gallium oxide layer doped with magnesium Mg, and the magnesium Mg doping acts as an acceptor type trap in the epsilon phase gallium oxide, effectively compensates for the donor type defects of the epsilon phase gallium oxide, and improves the overall resistivity of the epsilon phase gallium oxide thin film. The preparation method adopts a metal organic chemical vapor deposition method, and the growth temperature of the second gallium oxide layer is higher than that of the first gallium oxide layer; and the molar flow ratio of the magnesium source to the gallium source is controlled to be 0.0001-0.1 during preparation. The application introduces appropriate Mg doping through a nucleation layer stage, so that the Mg acts as an acceptor type trap to compensate for donor type defects, while improving the crystal nucleation quality, reducing dislocations and leakage channels, and realizing the dual optimization of the crystal quality and electrical performance of the epsilon phase gallium oxide thin film, thereby effectively reducing the thin film leakage current and improving the resistivity.

The application provides an infrared absorption material based on doping regulation, a preparation method and an infrared detector. By introducing selenium atoms to replace tellurium atoms in a sodium gallium telluride material, the material is doped according to a doping ratio of 1:4 to 1:2 of atomic weight, the energy band structure and optical properties of the material are regulated, a new infrared absorption material is obtained, and the light absorption performance of the material in the infrared wave band is significantly improved. According to the component characteristics of the infrared absorption material, a specific preparation scheme is provided, the preparation is completed by grinding, secondary melting and annealing treatment of the set principle mass of sodium single substance, gallium single substance, tellurium single substance and selenium single substance, and the band gap and absorption intensity are accurately adjusted, and the symmetry and crystal stability of the material are also considered.

The present application provides a contact comprising: a first contact member formed of a tungsten-containing material, the first contact member having an exposed surface and a first groove open to the exposed surface, the first groove having a surrounding sidewall and a bottom wall defining an interior of the first groove; a first metal layer on a bottom wall of the first recess and having a top surface below the exposed surface of the first contact member; a liquid metal layer formed of a material containing a gallium indium tin alloy, located only on the top surface of the first metal layer and extending over the exposed surface of the first contact member, and the liquid metal layer is compliant and displaced by pressure applied to the liquid metal layer, and return to the initial shape in response to removal of the pressure on the liquid metal layer.

The invention relates to a method for manufacturing a quantum dot and the quantum dot. The method of manufacturing a quantum dot includes: forming a core including silver (Ag) and indium (In); purifying the core with a surface treatment solution comprising gallium (Ga); and forming a shell surrounding (e.g., surrounding) the core by reacting a first precursor comprising gallium (Ga) with the core.

There is provided a photothermal material, comprising a plurality of layers of two-dimensional phyllosilicate intercalated with a liquid metal. In a particular embodiment, the phyllosilicate is mica and the liquid metal is gallium.

A method for preparing a γ-Ga2O3 nanomaterial, comprising a step of treating a mixture comprising a gallium element, water, and an organic solvent with ultrasound. The preparation process and equipment requirements are simple, the cost of materials is low, there are fewer experimental parameters, and experimental conditions are mild, with no additional heat source and / or pressure being applied. The γ-Ga2O3 nanomaterial can be prepared, in kilograms or above, quickly at an ambient temperature and pressure.

This invention relates to a method for preparing ε-Ga2O3 thin films based on chemical vapor deposition, comprising: placing gallium oxide powder in a heating zone of a quartz tube, and placing a substrate in a deposition zone of the quartz tube; the deposition zone and the heating zone are integrally connected and communicate with each other; a predetermined first distance is maintained between the substrate and the heating zone; a mixture of carrier gas and hydrogen is introduced from one end of the heating zone of the quartz tube; the proportion of hydrogen in the mixture is 5%-10%; the heating zone of the quartz tube is heated to a predetermined temperature under normal pressure and held at the predetermined temperature for a predetermined time, so that the gallium oxide powder is reduced to gallium vapor and water vapor under the action of hydrogen, and at the same time, the gallium vapor and water vapor generate gallium hydroxide and hydrogen in the deposition zone with the flow of the mixture gas, and then the gallium hydroxide is thermally decomposed and deposited on the substrate in the deposition zone, followed by annealing to obtain an ε-Ga2O3 thin film; wherein the predetermined temperature of the heating zone is 900℃-1200℃; and the temperature of the deposition zone is 500℃-850℃.

A method and kit for purifying radioactive gallium are provided. The method includes an aqueous solution containing or consisting of nitric acid and / or hydrochloric acid, radioactive gallium, and a zinc isotope, and a container containing a cation exchange material. The aqueous solution is passed through the container, binding the radioactive gallium to the cation exchange material. An aqueous rinsing solution containing or consisting of nitric acid and water is then passed through the container, eluting the zinc isotope from the cation exchange material. Finally, an aqueous elution solution suitable for eluting radioactive gallium from the cation exchange material is passed through the container and into a collection vessel, resulting in an aqueous solution containing radioactive gallium.

The invention belongs to the technical field of resource recycling and metal organic framework material preparation, and particularly relates to a method for efficiently extracting a copper element from copper-indium-gallium-selenium powder and then directly synthesizing a copper-containing MOF material. The method comprises the steps that (1) the copper-indium-gallium-selenium powder and a prepared mixed solution of acid and hydrogen peroxide are subjected to contact leaching, and a solution A is obtained; (2) mixing the solution A with a first extraction agent to obtain a solution B and an organic phase A; adjusting the pH value of the solution B to 1.5, and adding a second extraction agent to obtain a solution C and an organic phase B; adding a nitric acid aqueous solution into the organic phase B for reverse extraction to obtain a copper nitrate solution and an organic phase C; (3) carrying out a hydrothermal reaction on a solution containing the organic ligand and the obtained copper nitrate solution to obtain a blue precipitate, namely a Cu-BTC material; according to the method, efficient recovery and efficient separation of the copper ions are achieved, and the Cu-BTC material with high purity is obtained in a low-cost and efficient mode.