817 results about "Gallium" patented technology

The invention provides a metal gallium extraction device and an extraction method thereof. The gallium extraction device comprises an extraction tank, a base and an extraction mechanism, a top plate is hermetically mounted at the top of the extraction tank through bolts, a mounting cover is mounted at the top of the top plate through bolts, a feeding pipe is mounted on the inner wall of the mounting cover, a recycling pipe is mounted at the bottom end of the extraction tank, a suction pipe is fixedly arranged on the side wall of the extraction tank, and the extraction mechanism comprises a mounting plate fixedly arranged on the inner wall of the extraction tank; according to the scheme, the cleaning plate designed in a special shape is used for controlling the screw rod to rotate in a linkage manner, so that water-phase clarified matters are synchronously treated in the process of discharging a water phase, the interior of the extraction tank can be well and finely cleaned, and meanwhile, the clarified matters are centrally treated, so that the blockage of a recovery pipe can be avoided; therefore, the top plate does not need to be opened for washing, clarified impurities in the extraction tank can be effectively reduced, and the subsequent extraction effect and the extraction stability are ensured.

The invention provides a method for providing composite luminescent particles, comprising: (a) providing (i) a luminescent material, comprising (A1-xBx)3(C1-yDy)5O12 nanoparticles or a precursor therefor, wherein A comprises one or more of yttrium, lutetium, gadolinium, lanthanum; B comprises one or more rare earth elements; C comprises one or more of aluminum, gallium, and scandium; D comprises one or more transition metal ions; and wherein 0≤x≤1, 0≤y≤1, and x+y>0; and (ii) further providing a precursor of an oxide material, wherein said oxide material has a melting point of at least 850°C; (b) mixing said (i) luminescent material comprising (A1-xBx)3(C1-yDy)5O12 nanoparticles or a precursor therefor and (ii) said precursor of an oxide material; (c) curing said precursor of said oxide material to obtain a cured particle, said cured particle comprising said luminescent material, and a coating of said oxide material; (d) heating said cured particle at a first temperature for a first duration, wherein said first temperature is 600 °C or higher, wherein said first duration is 10 minutes or more; and (e) heating said cured particle under a reducing atmosphere comprising carbon monoxide at a second temperature for a second duration, wherein said second temperature is 700 °C or higher, and wherein said second duration is 1 hour or more.

The invention relates to the technical field of metal material processing. The invention provides an impurity removing and charging method, system and equipment for metal gallium production and a storage medium. The method comprises the following steps: inputting a production task through an intelligent control system, and presetting a material addition amount and process parameters; the remaining amount of the material storage bin is detected through a material level monitoring sensor, and the materials are conveyed to an adding actuator through a conveying device after it is confirmed that the remaining amount is sufficient; scanning a feeding area by means of a visual identification system and a laser scanner, obtaining coordinate data of a target feeding point, planning a motion path of the robot, and controlling the robot to accurately position; material adding is executed in stages, the concentration or liquid level change is monitored in real time so as to dynamically adjust the adding amount, meanwhile, the feeding state is continuously monitored through visual recognition, and the posture and parameters of the robot are corrected in real time for deviation or abnormity. The problems that in the impurity removal process of metal gallium production, the precision of traditional manual feeding is greatly influenced by operation experience, material proportion deviation is likely to be caused, the labor intensity of workers is high, and safety risks exist are solved.

The invention provides a flexible electromagnetic shielding film and a preparation method thereof. The preparation method comprises the following steps: mixing metal gallium and metal indium in a preset proportion to prepare a gallium-indium alloy; the preparation method comprises the following steps: putting a preset mass of gallium-indium alloy into an isopropanol solution, and treating through an ultrasonic cell disruption system to obtain a liquid metal particle suspension; stirring magnetic functional nanoparticles, an electrostatic spinning high-molecular elastomer and a solvent at normal temperature for a preset time to obtain an electrostatic spinning homogeneous solution; treating the electrostatic spinning homogeneous solution by adopting an electrostatic spinning process to obtain a magnetic nanofiber membrane; and spraying the liquid metal particle suspension onto the magnetic nanofiber membrane by adopting an electrostatic spraying process to obtain the flexible electromagnetic shielding film. According to the flexible electromagnetic shielding film and the preparation method thereof, the problem that the stability of an existing shielding material is reduced under the stretching effect can be solved.

The method comprises the following steps: weighing an oxide precursor of metal indium, an oxide precursor of metal M, an ammonium salt and a lithium salt according to a chemical formula of indium-based halide, fully mixing, and calcining in an inert atmosphere to obtain the indium-based halide solid electrolyte. Forming an indium-based halide solid electrolyte through a solid-phase reaction; wherein M is selected from at least one of magnesium, calcium, strontium, barium, aluminum, gallium, indium, bismuth, scandium, yttrium, zinc, germanium, tin, lanthanum, cerium, samarium, gadolinium, holmium, erbium and ytterbium. The method can greatly simplify the synthesis process, reduce the raw material cost and realize industrial batch preparation.

The invention discloses a method for preparing a gallium nitride nanowire array by a flux method. The method comprises the following steps: providing a liquid phase system of an alloy catalytic material containing Ga and a transition metal element with a catalytic property, and a Ga-Na liquid phase alloy; under the condition of isolating water and oxygen, enabling the liquid phase system to be in contact with the gallium nitride single crystal substrate, under the atmosphere of high-pressure nitrogen, enabling the metal sodium to dissociate nitrogen at high temperature, and realizing c-direction growth of the gallium nitride nanowire array on the gallium nitride single crystal substrate under the catalytic action of the alloy catalytic material. The preparation of the raw materials only needs to be completed at one time, the substrate does not need to be specially treated, only gallium, sodium, nickel and nitrogen are used as the raw materials, and the cost is low; compared with a traditional sodium fluxing agent method for growing gallium nitride single crystals, the method has the advantages that a sodium-gallium-transition metal melt liquid-phase system with the catalytic property of the sodium fluxing agent is utilized, and the high-density gallium nitride nanowire is innovatively prepared.

The invention belongs to the technical field of semiconductor material preparation, and provides a gallium oxide thin film growth method which comprises the following steps: providing a reaction chamber and a beveled substrate, and placing the beveled substrate in the reaction chamber; after controlling the temperature and the pressure in the reaction chamber to be a first temperature and a first pressure respectively, introducing a gallium source and an oxygen source into the reaction chamber so as to form a first gallium oxide layer on the beveled substrate; after controlling the temperature and the pressure in the reaction chamber to be a second temperature and a second pressure respectively, introducing a gallium source and an oxygen source into the reaction chamber to form a second gallium oxide layer on the first gallium oxide layer; wherein the first temperature is higher than the second temperature, and the first pressure is lower than the second pressure. In the growth process of the first gallium oxide layer and the second gallium oxide layer, the high-temperature and low-pressure growth environment is beneficial to rapid two-dimensional growth of a gallium oxide material, the low-temperature and high-pressure growth environment is beneficial to stress release of the gallium oxide material, defect extension is hindered, dislocation defects are reduced, and the surface quality of a gallium oxide film is improved.

The invention relates to a catalyst for preparing methanol through hydrogenation of carbon dioxide. The catalyst comprises a hydroxide compound with a core-shell structure, the hydroxide compound with the core-shell structure is formed by taking a lamellar hydroxide as a core and coating the lamellar hydroxide with a granular hydroxide to form a shell; wherein the lamellar hydroxide and the granular hydroxide respectively and independently comprise one or more of hydroxides of copper, manganese, nickel, indium, zinc, aluminum, cerium, zirconium, cobalt, gallium and silicon, and the lamellar hydroxide and the granular hydroxide in the hydroxide compound with the same core-shell structure are different. Lamellar hydroxides in the hydroxide compounds with different core-shell structures are different. The invention further provides a preparation method of the catalyst, the preparation method is simple in process and low in cost, and the prepared catalyst is high in active element content, high in catalytic activity, high in carbon dioxide conversion rate and high in methanol yield.

The invention relates to an electric contact conducting element based on gallium-based liquid metal and a preparation method of the electric contact conducting element. The electrical contact conductive element of the present invention comprises a substrate and a conductive paste coating comprising a gallium-based liquid metal and a conductive lubricant. The current-carrying friction performance of the electric contact conductive element is remarkably improved, the preparation method is simple, practicability is high, universality is high, and the electric contact conductive element plays an important role in improving the current transmission capacity of an electric contact interface.

The invention discloses a method for preparing a transdermal microneedle based on gallium-based liquid metal, which comprises the following steps: (1) heating the gallium-based liquid metal at a temperature higher than the melting point of the liquid metal, so that the gallium-based liquid metal is completely molten into a liquid state; (2) sucking the liquid metal preheated in the step (1) by using a microsyringe or a pipettor, and quickly injecting the liquid metal into a microneedle mold, so that the liquid metal is spread and completely covers a cavity of a needle tip in the mold; (3) transferring the mold in the step (2) into a constant-temperature vacuum box, and decompressing and degassing under vacuum; in the degassing process, the degassing temperature enables the liquid metal to be kept in a flowing liquid state all the time, and vacuumizing is conducted till the pressure is not higher than 10 Pa; the degassing time is not less than 5 hours; (4) continuously injecting the preheated gallium-based liquid metal or a degradable polymer solution into the mold to form a substrate of the microneedle; and (5) transferring the mold in the step (4) to a temperature far lower than the melting point of the liquid metal, and freezing and forming to obtain the transdermal microneedle.

The invention discloses an extraction method for extracting gallium from waste residues of coal gangue and bauxite, which is characterized in that metal elements such as gallium and aluminum in the waste residues can be uniformly distributed through powdering and proper mixing, ammonium sulfate is added in the roasting process, so that not only is the separation and release of gallium and aluminum realized, but also the generated ammonium sulfate gas is cooled, crystallized and recycled, and the production cost is reduced. According to the method, the process cost is reduced, acid leaching, alkaline leaching and composite extraction are adopted step by step, it is ensured that gallium is efficiently enriched and separated in all procedures, gallium oxide with the purity larger than or equal to 99.5% is finally obtained, meanwhile, residual silicon-rich residues and bauxite residues are subjected to hydrothermal crystallization to prepare molecular sieves, comprehensive utilization of waste residues is achieved, and obvious economic and environment-friendly benefits are achieved.

The invention discloses a gallium-based liquid metal composite material, which is prepared from the following components in parts by weight: 10 to 30 parts of elastomer, 65 to 95 parts of oxidized gallium-based liquid metal and 1 to 5 parts of Ti < 3 > C < 2 > T < x > MXene. By controlling the oxidation rate of the gallium-based liquid metal, the mobility of the gallium-based liquid metal can be effectively reduced, the gallium-based liquid metal is prevented from leaking in the composite material, and the flexibility is improved.

The invention relates to a colored radiation refrigeration coating and a colored cooling coating, the colored radiation refrigeration coating comprises a white prime coating and a colored surface coating which are matched for use, the sunlight reflectivity of a white bottom layer formed by the white prime coating at the wave band of 0.3-2.5 microns is greater than or equal to 95%, and the sunlight reflectivity of the colored surface coating at the wave band of 0.3-2.5 microns is greater than or equal to 95%. The atmospheric window emissivity at the wave band of 8-13 [mu] m is greater than or equal to 95%; the colored surface coating comprises a first filler, yttrium gallium garnet and first resin, the yttrium gallium garnet is doped with chromium, and the mass fraction of the chromium in the yttrium gallium garnet is 5%-15%. A color cooling coating formed by the color radiation refrigeration coating is bright in color, the sunlight reflectivity at the wave band of 0.3-2.5 microns is larger than or equal to 82%, the atmospheric window emissivity at the wave band of 8-13 microns is larger than or equal to 95%, and the color radiation refrigeration coating has an excellent cooling effect.

The invention discloses a method for improving performance of rare earth permanent magnet sintered neodymium iron boron grain boundary diffusion, and belongs to the technical field of rare earth permanent magnet materials. The method comprises the steps that a low-melting-point metal layer and a diffusion layer containing heavy rare earth elements are sequentially formed on the surface of a clean sintered neodymium-iron-boron magnet, and then vacuum diffusion heat treatment and tempering treatment are conducted. Wherein the low-melting-point metal layer comprises at least one of copper, aluminum, gallium and tin or an alloy of the copper, the aluminum, the gallium and the tin; the heavy rare earth element comprises at least one of dysprosium, terbium, holmium and gadolinium. The low-melting-point metal layer is preferentially diffused and wets the grain boundary in the heat treatment process, heavy rare earth elements are promoted to be deeply and uniformly diffused towards the interior of the magnet along the grain boundary, so that a heavy rare earth-rich shell layer is formed outside main phase grains of the magnet, and the intrinsic coercive force is improved; meanwhile, the low-melting-point metal forms a strengthening phase at the grain boundary, the brittleness of the magnet after diffusion is improved, the surface corrosion phenomenon is restrained, and collaborative optimization of the comprehensive performance of the magnet is achieved.

The present invention provides a dendrite-free zinc-based flow battery. The flow battery includes an anode integrated with a first collector, a cathode integrated with a second collector, a first storage tank comprising catholyte, a first pump connects the cathode and the first storage tank, a second storage tank comprising anolyte and liquid eutectic alloys, a second pump connects the anode and the second storage tank, and a separator to prevent direct contact between the anolyte and the catholyte. The room-temperature gallium-based liquid metals (Ga-LM) alloys enable zinc-based flow batteries (Zn-FBs) to achieve unparalleled areal capacity and exceptionally long cycle life.

The invention relates to the technical field of hydrometallurgy production, and particularly discloses a method for synergistically extracting gallium and scandium by coupling titanium white waste acid with vanadium extraction converter sludge, which comprises the following steps: mixing titanium white waste acid and vanadium extraction converter sludge in proportion, stirring and leaching to obtain a leaching solution; adding an extraction agent and a diluent into the leaching solution for extraction, and washing to obtain a gallium and scandium loaded organic phase; a first stripping agent is added into the loaded organic phase of gallium and scandium for stripping treatment, and a gallium stripping solution and a loaded organic phase of scandium are obtained; sequentially carrying out alkali precipitation, alkali dissolution and electrolytic treatment on the gallium reverse extraction solution to obtain crude gallium; a second stripping agent is added into the scandium-loaded organic phase for stripping treatment, and a scandium precipitation solution and an organic phase solution are obtained; and the scandium precipitation solution is filtered, washed and subjected to acid dissolution, and a scandium-containing solution is obtained. According to the method, the titanium white waste acid is effectively recycled, rare and precious metals in the vanadium extraction converter sludge are efficiently and synergistically extracted, and the method has a relatively good popularization prospect.

The method comprises the following steps: A, mixing the lime precipitate with hot water, uniformly stirring and dispersing, adding a strong alkali solution, controlling the pH value to be 10-12, and reacting for 1-4 hours while stirring to obtain a mixed solution A; b, cooling the mixed solution A, and filtering to obtain filtrate and filter residues; taking the filtrate to obtain a gallium-containing pregnant solution; and C, the gallium-containing pregnant solution is sent back to a macroporous resin adsorption procedure for recycling gallium from the mother solution, and gallium recycling is carried out. According to the method, gallium in the gallium-containing lime sediment can be effectively recycled, the problem that the gallium content in the gallium-containing lime sediment is high is solved, and the gallium recycling rate is increased.

The invention provides an impurity removal method of a gallium-rich solution for a gallium-based fluorescent powder precursor, and belongs to the field of preparation of gallium-based fluorescent powder precursors. The method comprises the following steps: adding an oxidizing agent into an initial gallium-rich solution to carry out a first reaction so as to remove organic impurities in the initial gallium-rich solution and obtain a first gallium-rich solution; adding a composite impurity removal reagent into the first gallium-rich solution to carry out a second reaction to remove impurity elements such as calcium, silicon and vanadium in the first gallium-rich solution so as to obtain a second gallium-rich solution; and adding a sulfide type reagent into the second gallium-rich solution to carry out a third reaction so as to remove copper and iron impurity elements in the second gallium-rich solution, thereby obtaining the gallium-rich solution for the gallium-based fluorescent powder precursor. According to the method, various key impurity elements such as organic matters, alkaline earth metals, metalloids and heavy metals are directionally and efficiently removed through the impurity removal logic of oxidation impurity breaking, synergistic precipitation and deep vulcanization, so that the total content of the key impurity elements in the gallium-rich solution is remarkably reduced.

The invention belongs to the field of metallurgy, and particularly relates to a method for comprehensively recovering iron, vanadium, titanium, scandium and gallium through cooperation of vanadium titano-magnetite and red mud, which comprises the following steps: a) mixing vanadium titano-magnetite concentrate powder and red mud powder, roasting, leaching in water, and carrying out solid-liquid separation to obtain leached residues and leached liquid; b) mixing the leachate with a precipitant to precipitate vanadium, and carrying out solid-liquid separation to obtain vanadium-rich slag and vanadium-precipitated clear liquid; dissolving the vanadium-rich slag in a sulfuric acid solution, mixing the vanadium-rich slag with ammonium salt to react, carrying out solid-liquid separation, and roasting the obtained solid product ammonium polyvanadate to obtain V2O5; resin is used for adsorbing and desorbing gallium ions in the vanadium precipitation clear liquid, the pH of desorption liquid is adjusted to be alkaline, then electrolysis is conducted, and crude gallium is obtained; c) washing and drying the leaching residues to prepare pellets; after the pellets are pre-reduced, a carbonaceous reducing agent is mixed, melt separation treatment is carried out, and scandium-containing high-titanium slag and molten iron are obtained; and Ti and Sc in the scandium-containing high titanium slag are recycled. The method has the advantages of simple process, cleanness, high efficiency and the like.

The invention relates to an electrochemical induced metal oriented growth method based on a gallium-based liquid metal substrate, and belongs to the technical field of electrochemical materials. According to the present invention, the dynamic smooth interface and the low lattice mismatch characteristic of the liquid metal are utilized, the reduction kinetics of the metal ions is regulated and controlled through the constant current mode, the high orientation degree growth of the crystal along the specific crystal face (such as Zn (002) and In (111)) is achieved, and the prepared deposited metal dominant crystal face has the high orientation degree. The problems of stress accumulation and dendritic crystals of a traditional solid substrate can be solved, and the method is suitable for green preparation of nanowire arrays and functional coatings; and the process is simple and convenient to operate, easy in control of process parameters and suitable for batch production.

The invention belongs to the field of water electrolysis materials, and particularly relates to a porous single-crystal multi-element alloy catalyst and preparation and application thereof in HER catalysis, and the preparation method comprises the following steps: obtaining an electrolyte in which metal ions of M1, M2 and M3 are dissolved, placing a carrier in the electrolyte for constant-current electro-deposition treatment, and depositing on the carrier to form an M1-M2-M3 multi-element alloy; wherein M1 comprises at least one of zinc, gallium, indium and tin; m2 comprises at least one of iron, cobalt, nickel, copper, zinc, manganese and chromium; m3 comprises at least one of platinum, gold, silver, palladium and iridium; the total number of types of metal elements of M1, M2 and M3 is three or more; and carrying out transformation treatment on the carrier deposited with the M1-M2-M3 multi-component alloy at the temperature of 450-850 DEG C, and then carrying out modification treatment in alkali liquor, thereby obtaining the catalyst. The material provided by the invention can still show excellent long-cycle stability under acidic and large current conditions.

The present invention provides a doping precursor and a preparation method and application thereof, the preparation method comprising the following steps: (1) mixing a nickel source and a manganese source with a solvent to obtain a solution A, mixing an iron source with a solvent to obtain a solution B, and mixing a gallium source with a solvent to obtain a solution C; (2) adding the solution A, solution B and solution C obtained in step (1) together with an alkaline solution and a complexing agent into a reaction vessel to carry out a coprecipitation reaction; (3) centrifuging the coprecipitated product obtained in step (2) to obtain the doping precursor. In the present invention, doping is carried out by coprecipitation at the precursor stage, which has the advantages of good uniformity and simple preparation. Fe has low cost and can replace the position of Ni / Mn to achieve higher electronic conductivity and improve the thermal stability of the positive electrode; the doped Ga diffuses into the surface layer of the positive electrode material, which can play a role in maintaining the stability of the internal structure, which is equivalent to the protective effect of the coating layer.

The invention discloses automatic quantitative high-precision filling equipment for heating refined gallium in an air environment, which comprises an automatic filling assembly, an automatic receiving assembly, an outer cover feeding assembly, an inner cover feeding assembly and an automatic bottle feeding assembly, gallium has certain corrosivity, and in order to ensure the purity of the gallium, a peristaltic pump is adopted to directly suck and convey the gallium; a refined gallium heating unit; the refined gallium is heated, so that the condition that filling is blocked due to solidification of the refined gallium in the filling process due to too low room temperature is avoided; a quantitative filling unit; and a five-layer sealing filling gun is adopted to ensure that no leakage phenomenon is generated after filling is finished. According to the automatic quantitative high-precision filling equipment for heating the refined gallium in the air environment, a method for precisely filling the refined gallium through the high-speed quantitative filling gun is adopted, the other high-precision liquid supplementing filling gun is used for filling the final refined gallium, and the precision of a final product is guaranteed.

The invention discloses a precipitation separation and purification method for metals in gallium-containing wastes. The method comprises the following steps: firstly, dissolving the waste containing gallium, indium and tin with acid, then adding alkali liquor, and adjusting the pH value of the solution twice to respectively obtain a precipitate containing tin, a precipitate containing gallium and indium and a solution containing zinc; after the sediment stands for a period of time, slurry is added for filtering, obtained filter residues return to a slurry barrel, obtained tin-containing filtrate is used for preparing a high-purity tin product, obtained gallium and indium-containing filtrate is extracted with an extracting agent mainly comprising tributyl phosphate or trioctyl / decyl alkyl tertiary amine and the like, high-purity gallium is obtained in an organic phase, and high-purity indium is obtained in raffinate. According to the method, separation and purification of gallium, indium, tin and zinc are achieved through two-time precipitation and two-time filtration. Precipitation operation is simple, a precipitant is cheap and easy to obtain, and the separation method is low in cost.

Provided is at least one of a high gallium nitride sintered body that is less subject to increases in oxygen content caused by re-oxidation after sintering than known gallium nitride sintered bodies obtained by the hot pressing process, a method for producing the gallium nitride sintered body, or use of the gallium nitride sintered body. The gallium nitride sintered body comprises a surface layer having a higher density than an inner portion of the sintered body. The atomic mass ratio of gallium to the sum of gallium and nitrogen is more than 0.5 and 0.60 or less.

The invention discloses a platinum-based high-entropy intermetallic compound electrocatalyst and a preparation method thereof, the electrocatalyst is carbon material loaded platinum-based high-entropy intermetallic compound nanoparticles, and comprises 1-6 of six metal elements of platinum, manganese, iron, cobalt, nickel, zinc and copper, and 1-3 of three metal elements of gallium, indium and tin; in the nano-particles, platinum atoms account for 40%-60% of atoms, the platinum atoms and other metal atoms are orderly and regularly arranged, and the phase structure is an L10 phase. The preparation method of the platinum-based high-entropy intermetallic compound electrocatalyst is simple in process, and the metal loading capacity can be effectively controlled. Due to the introduction of the low-melting-point gallium / indium / tin metal, the high-entropy intermetallic compound can be prepared at a relatively low temperature, the agglomeration / sintering phenomenon is effectively avoided, and the platinum-based high-entropy intermetallic compound electrocatalyst with uniform size and adjustable components can be obtained. The electrocatalyst can be used for a fuel cell cathode material, and has important significance for improving the performance of a fuel cell.

The invention discloses a method for recycling zinc smelting tailings, which comprises the following steps of: sieving the dried zinc smelting tailings, classifying and sampling, leaching coarse fraction by hydrochloric acid to obtain a leaching solution I and lead chloride slag, mixing the leaching solution with fine fraction tailings, adjusting the pH value of the solution to be neutral to obtain neutralized slag and neutralized liquid, and recycling the neutralized slag and the neutralized liquid. The neutralized liquid is subjected to replacement to obtain replacement slag and a replacement liquid, the replacement liquid is subjected to iron removal purification electrodeposition casting to obtain a zinc ingot, the replacement slag is subjected to acid leaching again to obtain copper slag and a leaching solution, and the germanium-gallium-indium leaching solution is subjected to extraction and electrolytic refining to obtain germanium concentrate, metal gallium and metal indium; the lead chloride slag is leached through sulfuric acid to obtain lead sulfate slag, the lead sulfate slag is subjected to pyrogenic process lead smelting to recover lead metal, a leaching solution II is subjected to hydrochloric acid and sulfuric acid separation, and a sulfuric acid solution and a hydrochloric acid solution are obtained and can be recycled. The method is high in recovery rate and low in production cost, and the purposes of low-pollution, low-carbon and economical industrial production and rare and precious metal recycling are achieved.

The invention belongs to the technical field of low-melting-point alloys, and provides a low-melting-point gallium-based liquid alloy and a preparation method and application thereof. The preparation raw materials of the gallium-based liquid alloy comprise gallium, indium, tin, zinc, bismuth, antimony, lead and rare earth metal with specific mass content. The rare earth metal comprises one or two of lanthanum, cerium and neodymium. A trace amount of one or two of lanthanum, cerium and neodymium is added into the gallium-based alloy, so that the purity of the alloy can be improved, the viscosity can be reduced, and the surface tension can be adjusted; by adjusting the formula of the alloy, the smelting time is shortened in the alloy smelting process stage, the efficiency is improved, the alloy cost is reduced, the alloy is more uniform macroscopically, the low-temperature stability of the alloy is further improved, and the alloy can be kept in a stable liquid state at the low temperature even 10 DEG C below zero and better meet the special climate requirements.

The invention belongs to the technical field of tin plating materials, and relates to a tin plating plate with high sulfur resistance and a preparation method and application thereof. The tin-plated plate with high sulfur resistance comprises a first passivation layer, a first tin-plated layer, a first multi-component alloy layer, a tin-plated substrate layer, a second multi-component alloy layer, a second tin-plated layer and a second passivation layer which are arranged in sequence, the surface, away from the first tin plating layer, of the first passivation layer is an inner coating surface; the surface, away from the second tin plating layer, of the second passivation layer is an outer coating surface; the arithmetic mean roughness of the inner coating surface is 0.4-0.5 [mu] m, the profile skewness is 0-0.3, and the profile kurtosis is 2.5-3; the arithmetic mean roughness of the outer coating surface is 0.6-0.7 [mu] m, the profile skewness is 0-0.3, and the profile kurtosis is 2.5-3; the first multi-component alloy layer and the second multi-component alloy layer respectively and independently comprise gallium; according to the tin plate with the high sulfur resistance, the binding force between the film layers is high, and the deformation resistance and the sulfur resistance of the film layers are excellent.

The invention provides a method for growing a (310) oriented beta-Ga2O3 single crystal thick film on a sapphire substrate. The method comprises the following steps: cleaning the sapphire substrate and then carrying out annealing treatment; and with hydrogen chloride gas, gallium metal and oxygen as reaction sources, epitaxially growing a (310) oriented beta-Ga2O3 single crystal thick film on the treated sapphire substrate by using a hydride vapor phase epitaxy method. According to the method for growing the (310) oriented beta-Ga2O3 single crystal thick film on the sapphire substrate, the process is simple, operation is easy, controllability is high, the obtained (310) oriented beta-Ga2O3 single crystal thick film is smooth in surface, compact and uniform in thickness, the crystallinity of the single crystal film layer is high, and the growth requirement of a single crystal epitaxial film layer of tens of micrometers can be met; in addition, the method provided by the invention can realize large-batch and large-scale production of the (310) oriented beta-Ga2O3 single crystal thick film, and meets the device preparation requirements.