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310results about How to "Reduce contact resistance" patented technology

Silver conductive paste used for positive electrode of solar battery and preparation technique thereof

The invention provides a silver conductive paste used for positive electrode of solar battery and a preparation technique thereof. The paste comprises silver powder, glass powder, an organic carrier and an additive, wherein the silver powder accounts for 65 to 85 percent of the total weight of the paste and consists of two types of silver powder with different particle sizes; the first type of silver powder has the particle size range of 3 to 15 micrometers and is spherical; the second type of silver powder has the particle size range of 0.1 to 3 micrometers and is spherical; the first type of silver powder accounts for 20 to 50 percent of the total silver powder; the glass powder is of Pb-B-Si-Zn-Ti-Al-O series and accounts for 1 to 10 percent of the total weight of the paste; the organic carrier accounts for 10 to 20 percent of the total weight of the paste; and the additive accounts for 0.1 to 3 percent of the total weight of the paste, and consists of BaO powder and CaO powder. The silver powder with different particle size ranges is mutually filled, thus greatly improving the electrical property of the electrode and improving the photoelectric conversion efficiency of the battery. In addition, the invention can ensure good ohmic contact between the paste and a substrate.
Owner:CENT SOUTH UNIV

Current collector with surface being decorated with vertical orientated grapheme and preparation method thereof

The invention discloses a current collector with a surface decorated with vertical orientated grapheme. The surface of the current collector is decorated with a layer of vertical orientated grapheme nanosheets. The invention further discloses a preparation method of the current collector with the surface being decorated with the vertical oriented grapheme. According to the preparation method, a mixed gas composed of carbon source gases, indefinite form carbon etching gases and argon is used as a precursor, the method of enhancing chemical vapor deposition with plasmas is applied, and thus the current collector with the surface being decorated with the vertical orientated grapheme is obtained without adhesion agents. The surface of the current collector obtained through the preparation method is decorated with a layer of net structure composed of the vertical orientated grapheme nanosheets, edges with dense exposed grapheme are provided, therefore, the current collector can get contact with active materials thoroughly, internal resistance is reduced, the purposes of high magnification and high power density energy storage are achieved when the current collector is applied to energy storage devices such a super capacitor and a secondary battery.
Owner:ZHEJIANG UNIV

Cylindrical power battery module structure

The invention discloses a cylindrical power battery module structure which comprises at least two battery modules connected in series with each other. Each battery module comprises a battery cell group, a battery cell bracket, an anode nickel piece, a cathode nickel piece and a circuit board; the battery module structure comprises a nickel piece connection rigid pressure plate, nickel piece connection bolt and nut, module connection bolt and nut and a support; the battery cell brackets, the battery cell groups, the anode nickel pieces and the cathode nickel pieces are assembled to form the battery modules; and the battery modules are connected into a battery module through the nickel piece connection rigid pressure plate, the nickel piece connection bolt, the nickel piece connection nut, the module connection bolt, the module connection nut and the support. According to the invention, the nickel pieces among the battery modules are connected by the multipoint bolts of the rigid pressure plate; the nickels of the module are in direct close pressure-equalizing connection, and the little total internal resistance, low self consumption and high reliability of electric connection of the module are guaranteed; the anode side structure and the cathode side structure of the battery module correspond to and are matched with each other; the capacity expansion of the battery module is facilitated, and the standard design of the battery module structure is easy to realize; and large-scale production is facilitated, and the manufacturing cost is lowered.
Owner:欣旺达惠州新能源有限公司

RFLDMOS (Radio Frequency Laterally Diffused Metal Oxide Semiconductor) based on self-aligned silicide and tungsten plug structure and manufacturing method thereof

The invention discloses an RFLDMOS (Radio Frequency Laterally Diffused Metal Oxide Semiconductor) based on a self-aligned silicide and tungsten plug structure and a manufacturing method thereof. By utilizing a double-diffusion method, a source high-doping area and a drain high-doping area which have lateral channel structures are manufactured on a silicon slice, and a multicrystal silicon grid ismanufactured; the manufacturing method of the RFLDMOS based on the self-aligned silicide and tungsten plug structure is characterized by further carrying out the following treatments: forming a silicon dioxide layer on the surface; etching off parts of the silicon dioxide layer at the tops of a source and a drain, and depositing a layer of metal on the whole surface of the silicon slice; carryingout high-temperature annealing treatment to form a metal silicide in a silicon-exposed area on the silicon slice surface; manufacturing a dummy faraday gate above the multicrystal silicon grid, manufacturing an oxide dielectric layer on the whole silicon slice surface, manufacturing through holes communicated to the metal silicide at parts corresponding to metal silicide contact holes, and filling tungsten in the through holes; and arranging metal layers respectively corresponding to the through holes of the source and the drain to form a contact electrode. According to the RFLDMOS based on the self-aligned silicide and tungsten plug structure and the manufacturing method thereof disclosed by the invention, the series impedance of a source end is reduced, and the power gain of devices is effectively increased.
Owner:KUNSHAN HUATAI ELECTRONICS TECH CO LTD
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