The application discloses a kind of HEMT device structures and methods of inhibiting current collapse.The HEMT device structure of inhibiting current collapse includes: epitaxial structure, including the
heterojunction of sequentially arranged along first direction, P-type
semiconductor layer and n++ type heavily doped layer, the
heterojunction has carrier channel, and the
conduction band of the carrier channel is pulled down to
Fermi level below by n++ type heavily doped layer;And, source, drain
and gate, the source, the drain is electrically connected with the
heterojunction, the gate is arranged on the P-type
semiconductor layer, the gate is arranged between the source and the drain along second direction, and the second direction and the first direction are cross arrangement.The application avoids additional
semiconductor manufacturing processes, such as
etching,
ion implantation, etc., in the vicinity of gate, avoids introducing a large number of
surface states, so as to improve the dynamic characteristics of device.