1430results about How to "Improve dynamic characteristics" patented technology

To provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability and a manufacturing method of the semiconductor device with high mass productivity. The summary is that an inverted-staggered (bottom-gate) thin film transistor is included in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, a channel protective layer is provided in a region that overlaps a channel formation region of the semiconductor layer, and a buffer layer is provided between the semiconductor layer and source and drain electrodes. An ohmic contact is formed by intentionally providing the buffer layer having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrodes.

A display device includes a pixel portion in which a pixel is arranged in a matrix, the pixel including an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen and having a channel protective layer over a semiconductor layer to be a channel formation region overlapping a gate electrode layer and a pixel electrode layer electrically connected to the inverted staggered thin film transistor. In the periphery of the pixel portion in this display device, a pad portion including a conductive layer made of the same material as the pixel electrode layer is provided. In addition, the conductive layer is electrically connected to a common electrode layer formed on a counter substrate.

An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.

A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.

An object is to provide a semiconductor device including a thin film transistor with excellent electrical characteristics and high reliability and a method for manufacturing the semiconductor device with high mass productivity. A main point is to form a low-resistance oxide semiconductor layer as a source or drain region after forming a drain or source electrode layer over a gate insulating layer and to form an oxide semiconductor film thereover as a semiconductor layer. It is preferable that an oxygen-excess oxide semiconductor layer be used as a semiconductor layer and an oxygen-deficient oxide semiconductor layer be used as a source region and a drain region.

The invention belongs to the field of power converter control and relates to a model prediction control method of a voltage source type rectifier when a network voltage is unbalanced. The model prediction control method of the voltage source type rectifier when the network voltage is unbalanced comprises the steps of converting three-phase network voltage and a three-phase current into network voltage and a current which are under a two-phase static coordinate system through an abc / alpha beta coordinate, obtaining network positive sequence voltage and negative sequence voltage by carrying positive and negative sequence component separation of the network voltage under the two-phase static coordinate system, calculating reference values of active power, calculating current reference values of the rectifier under the two-phase static coordinate system, and carrying out model prediction current control and selecting an optimal on-off state. The model prediction control method of the voltage source type rectifier when the network voltage is unbalanced is capable of quickly and precisely tracing the current under the two-phase static coordinate and effectively eliminating fluctuation of direct current side voltage at the same time, power quality of the system is improved, a reliable network-connected operation of the rectifier when transient state network voltage is unbalance is achieved, and dynamics and stability of the whole system are improved.

The invention discloses a small high-speed five-axis linkage machine tool, which comprises a foundation structure, a spindle box component and a cradle type worktable. The spindle box component is supported on the foundation structure, and a crossbeam with a frame-shaped structure is arranged on two upright columns to form a bridge-type portal structure. The torque bearing capacity of the crossbeam is improved, the small high-speed five-axis linkage machine tool has all advantages of a five-axis linkage machine tool in the prior art, and carries identical machining reacting force, the volume of a structural part is reduced, and the weight of the structural part is greatly lightened; a spindle box is positioned between two transverse rods of the frame-shaped crossbeam, overturning moment is eliminated, and the stability of the machine tool can be guaranteed; in addition, sizes of various components are greatly reduced on the premise of identical machining capacity, and the stroke of the machine tool can be large in the design; and by the aid of the structure, the machining precision is greatly improved, the machining range is greatly expanded, better dynamic characteristics and higher feeding speed and higher cutting speed can be realized, cutting and machining time is greatly shortened, better surface machining quality is obtained, and machining efficiency is enhanced.

The disclosed aerodynamic muscle motion simulation control platform comprises: three very same pieces of aerodynamic muscles connected to a central post and a fixed platform, a motion platform hinged to the muscles with uniform-distributed hinge points, and the central post to rigid connect with the fixed platform and hinge the motion platform through a central ball hinge with the hinge point on platform center to endow the motion platform two rotation DOF. Besides, the control system comprises an input conversion module, a controller, and an output drive amplification module. This invention is fit to different motion simulation.

A coupled four-freedom-degree parallel connection vibration isolation platform mainly comprises an upper platform, a lower platform, four main part branches and a middle constraint branch, wherein the four main part branches are identical in structure and used for connecting the upper platform and the lower platform. The tails of actuators of the main part branches are connected with the lower platform through universal joints, telescopic rods of the actuators are connected with the upper platform through ball joints, one end of a lower connecting rod in the middle constraint branch is connected with the lower platform through a universal joint, the other end of the lower connecting rod is connected with an upper connecting rod in a bell socket mode to form a sliding pair, namely the upper connecting rod can expand and retract in the lower connecting rod, the upper connecting rod of the sliding pair is sleeved with a spring, the other end of the upper connecting rod is connected with the upper platform through a rotating pair, and the axis of the rotating pair is parallel to one axis of the universal joint in the middle constraint branch. Lower hinge points of the four main part branches are symmetrically arranged in a square shape, upper hinge points are arranged in a trapezoid shape, and the trapezoid is symmetrical about the axis of a rotating pair of the middle constraint branch. The coupled four-freedom-degree parallel connection vibration isolation platform is simple in structure, large in bearing capacity and good in dynamic response characteristic.

The invention discloses a coordination control method for double-fed asynchronous wind driven generator high voltage ride through, on the basis of a mathematical model of a double-fed asynchronous wind driven generator and gird side and rotor side converters of the double-fed asynchronous wind driven generator, allocation principles of active and reactive power of the grid side and rotor side converters of the double-fed wind driven generator are calculated, extremity expressions of active and reactive current are given, and a high voltage ride through implementation scheme capable of effectively providing dynamic reactive support for a power grid and eliminating direct current bus voltage, active power, reactive power and electromagnetic torque ripples is provided. The coordination control method in the invention can overcome defects of weak ride through capability and poor power grid stability of a wind driven generator in the prior art, thereby achieving the goal of optimal control of the generator when the power grid voltage is high; and the method can perfectly be implemented on the basis of original low voltage rid through hardware, thereby realizing joining with an existing low voltage ride through scheme of the unit, and forming a generalized voltage fault ride through control strategy capable of coping with a sudden change of amplitude of network voltage.

The invention relates to a variable-frequency power source based on the control of a digital signal processor, which comprises a switch power source module, a control circuit, a circuit for isolating and shaping pulse-width modulating signal, IPM inverting circuits, a circuit for detecting and protecting busbar voltage, a rectification input slow-start circuit, a communication circuit, an interface circuit for isolating and inputting parallel signals and an human-computer interface circuit for displaying the key. The invention adopts the structure of a single digital signal processor (DSP) coupled with the double IPM inverting circuits, provides two paths of independent variable-frequency power sources for two sets of asynchronous motors at the same time and carries out independent speed regulations to the two sets of asynchronous motors. The variable-frequency power source of the invention has the advantages of small volume, low power consumption, high reliability and being convenient for bulk production, etc., and adopts an appropriate switch frequency and an advanced voltage space vector pulse width modulation algorithm (SVPWM), thereby lowering the noise during the operation of the asynchronous motors and increasing the voltage utilization rate, with obvious effect on energy saving.

One of the objects of the present invention is to provide a thin film transistor using an oxide semiconductor film containing indium (In), gallium (Ga), and zinc (Zn), in which the contact resistance between the oxide semiconductor layer and a source and drain electrodes is reduced, and to provide a method for manufacturing the thin film transistor. An ohmic contact is formed by intentionally providing a buffer layer having a higher carrier concentration than the IGZO semiconductor layer between the IGZO semiconductor layer and the source and drain electrode layers.

The integrated lead suspension assembly comprises several improvements. An oversized terminating pad for the electrical traces and a smaller adjacent insulation layer on the flexure assembly enable laser solder ball bonding of the pads to the read/write terminal contacts on the slider without clamping operation. Consequently, the tip of the load beam can be made narrow for a structure that provides for head loading and unloading functions, which improves the dynamic performance of the suspension assembly. The flexure assembly is configured such that it requires no permanent bending in its forming process, and any permanent bending required is done to the load beam. The limiter that limits the travel of the flexure assembly is formed on the load beam and it is bent to the functional position only after attachment of the flexure assembly to the load beam. The limiter is configured and positioned at the leading edge side of the slider to optimize the unloading process and to minimize the possibility of disengagement of the limiter and the flexure assembly during high shock environment. Asymmetric backing branches are provided for the read and write traces in the flexure assembly located at the hinge area of the load beam, the widths of which are sized to optimize the dynamic signal performance of the read and write traces without impact on the vertical stiffness of the suspension. Low profile flanges at 30°–60° that bend from the plane of the load beam are provided along the edges of the load beam to optimize bending stiffness and flow induced vibration. Dimples are provided along the load beam to facilitate insertion of a plastic head separation tool.

The invention relates to the field of multi-motor cooperative control, and aims at providing an improved deviation coupling control structure suitable for a multi-motor system so that synchronization performance and tracking performance of the system can be effectively enhanced. Therefore, the adopted technical scheme is an improved deviation coupling control method suitable for the multi-motor system. Rotating speed weight coefficient reflecting degree of importance of motor rotating speed is utilized, and multi-motor rotating speed synchronization control is divided into two phases of system rotating speed control and unit rotating speed control for controlling. The concrete structure comprises six parts: (1) calculation of a system rotating speed value; (2) control of system rotating speed; (3) calculation of unit synchronization error; (4) calculation of unit error; (5) control of unit rotating speed; (6) and multi-motor rotating speed synchronization control. The improved deviation coupling control method suitable for the multi-motor system is mainly applied to multi-motor cooperative control.

The invention discloses an MEMS gyroscope robust self-adaptation control method based on neural network upper bound learning. The method includes the following steps that an ideal kinetic model and an MEMS gyroscope kinetic model are established, a sliding mode function is designed, a control law is obtained based on the sliding mode function, and an RBF neural network upper bound estimated value is used as a gain of a robust item on the basis of the control law together with a feedback item and the robust item; a parameter self-adaptation law and a network weight self-adaptation law are designed based on a Lyapunov method. According to the MEMS gyroscope robust self-adaptation control method based on neural network upper bound learning, the feedback item is added in the control law, the two-shaft vibration trajectory tracking speed and the parameter estimation speed of an MEMS gyroscope are greatly increased, and the vibration amplitude is decreased; the robust item based on RBF neural network upper bound learning is added in the control law, the buffeting problem caused by large external disturbance and fluctuation and the problem that the dynamic characteristics are changed worse are solved, the uncertainty of a structural formula and the uncertainty of a non-structured formula are eliminated, and therefore the robustness of the system is further improved.

A semiconductor device including thin film transistors having high electrical properties and reliability is proposed. Further, a method for manufacturing the semiconductor devices with mass productivity is proposed. The semiconductor device includes a thin film transistor which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, a source electrode layer and a drain electrode layer over the gate insulating layer, a buffer layer over the source electrode layer and the drain electrode layer, and a semiconductor layer over the buffer layer. A part of the semiconductor layer overlapping with the gate electrode layer is over and in contact with the gate insulating layer and is provided between the source electrode layer and the drain electrode layer. The semiconductor layer is an oxide semiconductor layer containing indium, gallium, and zinc. The buffer layer contains a metal oxide having n-type conductivity. The semiconductor layer and the source and drain electrode layers are electrically connected to each other through the buffer layer.

The invention discloses an ion beam figuring processing method for aspheric surface processing, comprising the following steps of: firstly, detecting and testing to acquire a facial-contour error distribution data R and a removal function P; then, establishing an ion beam figuring processing path, and measuring and calculating incident angles phi of various points of an optical curved surface; calculating a resident time density function and a material removal amount M by using a calculation model and a resident time iterative algorithm, and calculating the resident times of ion beams in all processing points; carrying out linear triaxial-linkage numerical-control figuring processing on the optical surface of an optical element to be processed according to the established processing path and the resident time; then, carrying out facial-contour error detection, correcting the P according to the M and the facial-contour error distribution data before and after the processing, repeating the previous steps by using the corrected removal function P for iterative processing, and ending the processing till the requirement for facial-contour convergence precision is met. The processing method provided by the invention has the advantages of good stability, high processing precision, strong controllability and low requirement for equipment.

A detection system of high sensitivity DC local discharge on large-capacity high voltage power device is prepared for providing high voltage DC voltage to balance detection impedance circuit by DC high voltage source, picking up local discharge signal of detected sample by balance detection impedance circuit, sending local discharge signal to differential amplification filtering circuit to carry out differential amplification filtering treatment than sending treated signal to data collection and analysis unit for obtaining detection and analysis result of local discharge signal.

The invention provides a satellite mobile communication method fused with a 5G network, and the method is characterized by comprising the following steps: carrying out the modeling of a satellite mobile communication scene, and carrying out the quantitative description of the system composition, a network structure, a communication link, a transmission system, and a working process; establishing high and low frequency networking; establishing satellite-ground cooperative cognitive wireless communication in a dynamic spectrum environment; performing high-dynamic compensation on Doppler frequency shift in mobile satellite communication; and realizing multi-user non-orthogonal multiple access in a mobile satellite communication environment. The method has the beneficial effects that the system effectively utilizes various spectrum resources to improve the data transmission rate and the system capacity; idle unlicensed spectrum is utilized by the system, and the problem of spectrum shortage is solved; the 5G air interface waveform is optimized to enable the 5G air interface waveform to adapt to high dynamic characteristics in a satellite communication scene; the spectrum utilization rate and the system capacity are effectively improved; the problems that a satellite mobile communication system is special in topology, difficult in routing and large in user service end-to-end time delay are effectively solved.

The invention discloses a monitoring method and an optimal control method for supercritical circulating fluidized bed (CFB) boiler combustion signals. The monitoring method comprises the following steps of: step 1, acquiring and pre-processing field data, and determining an auxiliary variable of an instant combustion carbon quantity model; step 2, building the instant combustion carbon quantity model based on mechanism modeling and data analysis hybrid modeling, and estimating the storage amount of instant combustion carbon in a hearth through a generalized Kalman filter information fusion technology, wherein the instant combustion carbon quantity model is shown in the description; and step 3, building a dynamic heat signal model, a hearth bed temperature signal model and a hearth outlet oxygen signal model through the instant combustion carbon quantity, and predetermining heat, bed temperatures and oxygen. The methods provided by the invention can accurately measure signals of heat, bed temperatures, oxygen and the like of a supercritical CFB boiler in real time, so that the optimal control on supercritical CFB boiler combustion is realized, and the combustion stability of the supercritical CFB boiler is improved.

The invention discloses a bidirectional direct-current converter feedback linearized back-stepping sliding-mode control mode. The bidirectional direct-current converter feedback linearized back-stepping sliding-mode control method comprises steps of using a filtering capacitance voltage and inductive current as control variables to establish a mathematic model of a bidirectional direct-current converter, performing feedback linearization on an original state variable to form a new linearized state equation, tracking an error with a new state variable as an input of a controller, combining a back-stepping method with a sliding-mode variable structure and designing a feedback control rule of a converter system, wherein the feedback control rule of the inverter system is performed on pulse width modulation and controls the bidirectional direct-current converter. The bidirectional direct-current converter feedback linearized back-stepping sliding-mode control mode combines the feedback linearization with the back-stepping sliding mode control to apply to the bidirectional direct-current converter, solves a non-minimum phase characteristic and a variable structure characteristic of the converter, greatly reduces fluctuation of bus voltage, expands a stable area of a system and has a good engineering application prospect.

The invention discloses a PIlambdaDmu controller parameter setting method based on a parameter stability domain. The method includes the following steps: judging if the input and the output of a controller system are stable, then determining parameter stability domain boundary curves at phase margin upper limit and at the position of phase margin appearing, determining a value range of two boundary curve frequency on the condition of ensuring parameters with practical significance, confirming the range of parameter Ki and Kp in the stability domain on the boundary curve, inserting a plurality of points on two boundary curves, determining a plurality of groups of points which are equal in Kp value respectively on the two boundary curves, obtaining a value range of Ki corresponding to the plurality of groups of points, determining an optimum value of Ki corresponding to each group of points by adopting a genetic algorithm, and finally determining an optimal solution through integral time absolute error (ITAE). According to the PIlambdaDmu controller parameter setting method based on the parameter stability domain, stable phase margin of a system and dynamic characteristics are both considered, and controller parameters are set by means of the genetic algorithm. A controller which is set by using the method can well control a system on the condition of meeting given stable phase margin, and therefore the fact that a system has better dynamic characteristics is guaranteed.

The invention relates to a drum-type omni-directional turned mass damper, belonging to the technical field of vibration resistance and absorption in structural engineering, and comprising a top cover,an outer-wall sleeve connected with the top cover, a sleeve-type structure arranged inside the outer-wall sleeve, an internal horizontal baffle and an external horizontal baffle. The sleeve-type structure comprises an inner-ring core cylinder, an outer-ring core cylinder, a steel ball holder and a steel ball, wherein the inner-ring core cylinder is arranged in the outer-ring core cylinder, the outer surface of the inner-ring core cylinder is fixed with the steel ball holder that is internally equipped with the steel ball. A viscous damper is connected between the outer-ring core cylinder andthe outer-wall sleeve, the lower end faces of the inner-ring core cylinder and the outer-ring core cylinder are both connected with the internal horizontal baffle via a universal rolling spherical hinge, and a spring is connected between the internal horizontal baffle and the external horizontal baffle which is further fixedly connected with a substructure. The damper can be operable for turning energy consumption and vibration damping in all directions of the structure, namely, two horizontal directions, vertical direction, and two directions of reversing and swinging.