3887 results about "Electron donor" patented technology

The spherical catalyst carrier is prepared with alcoholated magnesium chloride containing double-ether compound in emulsifying pelletizer. Liquid titanium halide compound is carried onto the spherical catalyst carrier to form spherical solid catalyst component in the presence of electron donor. In the X-ray diffraction spectrogram, the spherical solid catalyst component has diffraction peak in 13.3 deg of 2theta angle, strongest diffraction peak in 26.5 deg of 2theta angle and no characteristic diffraction peak of alpha-anhydrous MgCl2 in 15 deg of 2theta angle. The catalyst of the presentinvention has very high activity and may be used to produce polymer with good form, high apparent density and less fine powder. The catalyst is used in homopolymerization and copolymerization of olefin and suitable for various polymerization process.

A combined information display and information input device comprising a matrix of independently addressable light emitting devices and a plurality of light sensing devices, the light emitting devices comprising organic light emitting diodes comprising organic light emitting material positioned between a low work function electrode and a high work function electrode characterized in that the light sensing devices comprise organic photovoltaic devices comprising at least an organic electron donor and at least an organic electron acceptor positioned between a high work function electrode and a low work function electrode. The combined information display and information input device has application as a touch screen, for example for a mobile communication device.

An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.

Objects are to provide a semiconductor device for high power application in which a novel semiconductor material having high productivity is used and to provide a semiconductor device having a novel structure in which a novel semiconductor material is used. The present invention is a vertical transistor and a vertical diode each of which has a stacked body of an oxide semiconductor in which a first oxide semiconductor film having crystallinity and a second oxide semiconductor film having crystallinity are stacked. An impurity serving as an electron donor (donor) which is contained in the stacked body of an oxide semiconductor is removed in a step of crystal growth; therefore, the stacked body of an oxide semiconductor is highly purified and is an intrinsic semiconductor or a substantially intrinsic semiconductor whose carrier density is low. The stacked body of an oxide semiconductor has a wider band gap than a silicon semiconductor.

The present invention provides a solid catalyst component for the polymerization of olefins, comprising magnesium, titanium, a halogen and an electron donor, wherein said electron donor comprises at least one selected from the group consisting of polyol ester compounds of the formula (I): R₁CO—O—CR₃R₄-A-CR₅R₆—O—CO—R₂ (I) wherein, R₁ and R₂ groups, which may be identical or different, can be substituted or unsubstituted hydrocarbyl having 1 to 20 carbon atoms, R₃-R₆ groups, which may be identical or different, can be selected from the group consisting of hydrogen, halogen or substituted or unsubstituted hydrocarbyl having 1 to 20 carbon atoms, R₁-R₆ groups optionally contain one or more hetero-atoms replacing carbon, hydrogen atom or the both, said hetero-atom is selected from the group consisting of nitrogen, oxygen, sulfur, silicon, phosphorus and halogen atom, two or more of R₃-R₆ groups can be linked to form saturated or unsaturated monocyclic or polycyclic ring; A is a single bond or bivalent linking group with chain length between two free radicals being 1-10 atoms, wherein said bivalent linking group is selected from the group consisting of aliphatic, alicyclic and aromatic bivalent radicals, and can carry C₁-C₂₀ linear or branched substituents; one or more of carbon atom and/or hydrogen atom on above-mentioned bivalent linking group and substituents can be replaced by a hetero-atom selected from the group consisting of nitrogen, oxygen, sulfur, silicon, phosphorus, and halogen atom, and two or more said substituents on the linking group as well as above-mentioned R₃-R₆ groups can be linked to form saturated or unsaturated monocyclic or polycyclic ring.

A conductive composition comprises a π conjugated conductive polymer, a dopant, and a nitrogen-containing aromatic cyclic compound. A capacitor comprises an anode composed of a porous material of valve metal, a dielectric layer formed by oxidizing the surface of the anode, and a cathode provided on the dielectric layer and having a solid electrolyte layer containing a π conjugated conductive polymer, which comprises an electron donor compound containing an electron donor element provided between the dielectric layer and the cathode. Another capacitor is based on the above-described capacitor, wherein the solid electrolyte layer further comprises a dopant and a nitrogen-containing aromatic cyclic compound. An antistatic coating material comprises a π conjugated conductive polymer, a solubilizing polymer containing an anion group and/or an electron attractive group, a nitrogen-containing aromatic cyclic compound, and a solvent. An antistatic coating is formed by applying the antistatic coating material.

This invention provides a catalys conponent and catalyst. Said catalyst comprises titanium, magnesium and at least three electron donor compounds a, b and c, in which is selected from mono-aliphatic-carboxylate or mono-aromatic-carboxylate compounds, b is selected from a special diatomic alkoxide compound, and c is selected from binary binary-aliphatic-carboxylate or binary-aromatic-carboxylate or b is ether compound. Advantages: high polymerization activity and stereospecificity when used for olefin polymerization, in particular for propylene polymerization, wide molecular weight distribution of obtained polymer and good shape of polymer granulars.

The invention relates to A-D-A conjugated molecules by taking hepta-condensed ring units as cores and oligomerized five-membered aromatic rings as bridging units, wherein the tail ends are electron withdrawing units, a preparation method for the A-D-A conjugated molecules and an application of the molecules as active layer electron donors or electron acceptor materials in organic solar batteries (OPV). The A-D-A conjugated molecules based on hepta-condensed ring units can be processed by a solution method, have a proper energy level and have a relatively good sunlight capturing ability and heat stability, so that the molecules are an ideal material for the electron donors or electron acceptors in the organic solar batteries. The molecules have the structure as shown in the formula.

The invention relates to an A-D-A conjugated molecule with dithiophene indacene as a core, and oligomerizing pentatomic aromatic heterocyclic rings as a bridging unit and electron withdrawing unit at the end, a preparation method thereof and an application of the molecule, as an active-layer electron donor or electron receptor material, in an organic solar battery. The A-D-A conjugated molecule can be processed by a solution method, has proper energy level, strong sunlight trapping capability and thermal stability, is an ideal material of the electron donor or the electron receptor in the organic solar battery, and has the following general-formula structure shown in the specification.

A composition for the formation of an electric field programmable film, the composition comprising a matrix precursor composition or a dielectric matrix material, wherein the dielectric matrix material comprises an organic polymer and/or a inorganic oxide; and an electron donor and an electron acceptor of a type and in an amount effective to provide electric field programming. The films are of utility in data storage devices.

A method of fabricating an organic optoelectronic device having a bulk heterojunction comprises the steps of: depositing a first layer over a first electrode by organic vapor phase deposition, wherein the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer, wherein the interface of the second layer on the first layer forms a bulk heterojunction; and depositing a second electrode over the second layer to form the optoelectronic device. In another embodiment, a first layer having protrusions is deposited over the first electrode, wherein the first layer comprises a first organic small molecule material. For example, when the first layer is an electron donor layer, the first electrode is an anode, the second layer is an electron acceptor layer, and the second electrode is a cathode. As a further example, when the first layer is an electron acceptor layer, the first electrode is a cathode, the second layer is an electron donor layer, and the second electrode is an anode.

An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

A synthetic single crystal diamond material comprising: a first region of synthetic single crystal diamond material comprising a plurality of electron donor defects; a second region of synthetic single crystal diamond material comprising a plurality of quantum spin defects; and a third region of synthetic single crystal diamond material disposed between the first and second regions such that the first and second regions are spaced apart by the third region, wherein the second and third regions of synthetic single crystal diamond material have a lower concentration of electron donor defects than the first region of synthetic single crystal diamond material, and wherein the first and second regions are spaced apart by a distance in a range 10 nm to 100 μm which is sufficiently close to allow electrons to be donated from the first region of synthetic single crystal diamond material to the second region of synthetic single crystal diamond material thus forming negatively charged quantum spin defects in the second region of synthetic single crystal diamond material and positively charged defects in the first region of synthetic single crystal diamond material while being sufficiently far apart to reduce other coupling interactions between the first and second regions which would otherwise unduly reduce the decoherence time of the plurality of quantum spin defects and/or produce strain broaden of a spectral line width of the plurality of quantum spin defects in the second region of synthetic single crystal diamond material.

A process of polymerizing ethylene or ethylene and one or more comonomers in one or more fluidized bed reactors with a catalyst system comprising (i) a supported or unsupported magnesium/titanium based precursor in slurry form, said precursor containing an electron donor; and (ii) an activator containing aluminum in an amount sufficient to essentially complete the activation of the precursor is disclosed. In the process, the precursor and the activator are mixed prior to introduction into the reactor in at least one mixing procedure, and then the mixture is contacted again with additional activator to essentially complete activation of the precursor. In the method, the atomic ratio of aluminum to titanium is in the range of about 1:1 to about 15:1 and the mole ratio of activator to electron donor is about 1:1 to about 2:1, and no additional activator is introduced into the reactor(s).

Poly(aryleneethynylene) polymers for exfoliating and dispersing/solubilizing nanomaterial are provided herein. The poly(aryleneethynylene) polymers have unit monomer portions, each monomer portion having at least one electron donating substituent thereby forming an electron donor monomer portion, or at least one electron withdrawing substituent thereby forming an electron accepting monomer portion. Such polymers exfoliate and disperse nanomaterial without presonication of the nanomaterial.

The invention provides a solid catalyst component for the polymeriztion of olefins comprising a Ti compound and an electron donor (ED) selected from alcohol, ketones, amines, amides, nitrites, alkoxysilanes, aliphatic ethers, and esters of aliphatic carboxylic acids supported on Mg dichloride in which the ED/Ti molar ratio ranges from 1.5 to 3.5 and the Mg/Ti molar ratio is higher than 5.5. The invention also provides a catalyst for the polymerization of olefins using the solid catalyst component and a process for the (co)polymerization of olefins CH2=CHR.

The present invention is bulk depositing synthesis process of isotactic polybutylene-1, and belongs to the field of polymer technology. The powdered isotactic polybutylene-1 product is obtained through bulk depositing polymerization of butylene-1 as the monomer and reactant medium at 0-70 deg.c in the presence of supported titanium catalyst, and the subsequent flash evaporation to eliminate unpolymerized monomer. The catalyst system may have organic aluminum AlR3 as co-catalyst, added electron donor compound, and hydrogen as molecular weight regulator. The polymerization reaction is performed in a polymerizing kettle with stirring screw belt. The present invention has simple technological process, high efficiency and low cost, and the prepared isotactic polybutylene-1 has high stereoregularity degree, crystallization degree higher than 60 %, and smelting point of 127.5 deg.c.