The invention discloses a photosensitive
nanocrystal material and a preparation method thereof, and belongs to the technical field of
photoresist production processes. In order to solve the problems that an existing
photoresist material is low in light
absorption efficiency, insufficient in resolution ratio and complex in preparation, an Hf / Zr
mixed metal alkoxide precursor is adopted, and the
photoresist material is prepared through the steps of
anhydrous hydrolysis, two-
phase reaction,
surface modification, photosensitive addition and the like. The method specifically comprises the following steps: (i) dropwise adding
ultrapure water at a low temperature to react with a first ligand A to form 1.5-3nm
metal oxide nanocrystalline
sol; (ii) reacting alkali liquor in the two-phase
system to grow crystals; (iii) carrying out
surface modification on the bridged ligand B and the second ligand C; and (iv) adding a
photoacid generator and a free radical
photoinitiator, filtering with a filter membrane, and pre-
drying to form the membrane. The material is suitable for a negative photoetching process, and the EUV
absorption efficiency is gt; 85%, LWRlt; 2 nm. The method is simple to operate, and the yield is gt; the stability and the resolution ratio of the material are remarkably improved, and the material is suitable for sub-10nm
semiconductor photoetching.