22results about How to "Good step coverage" patented technology

A method for depositing a metal compound coating on the surface of a polymer base material at low temperature comprises the following steps: placing the polymer base material in an atomic layer deposition chamber, vacuumizing, and adjusting the temperature and pressure of the chamber; activating the surface of the polymer base material by using plasma; injecting a metal organic precursor into the reaction cavity in a pulse manner at the temperature lower than 300 DEG C, and forming a uniform metal compound coating through plasma enhanced atomic layer deposition; and the redundant precursor is purged through gas, and the steps are repeated until the coating with the target thickness is obtained. According to the method, the surface of the plastic base material is modified under the condition that the temperature is lower than 300 DEG C through a plasma enhanced atomic layer deposition (PEALD) technology, the metal compound coating which is uniform in thickness and controllable in component is obtained, and the requirement for improving the biocompatibility of the surface of the implant in the medical field is met.

The invention belongs to the field of thin films, and particularly discloses an atomic layer deposition method and a thin film prepared through the atomic layer deposition method. According to the deposition method, the reaction cavity, the two input pipeline systems, the outlet valve and the vacuum pump in the atomic layer deposition system are used for controlling precursor pulse deposition and inert gas purging conditions in the atomic deposition process, and the film deposition state is improved; the efficiency of purging and removing substances and impurity residues such as a precursor and a reaction product thereof is improved, the problem that the quality of a deposited film is affected by the impurity residues in a reaction system or on the surface of a sample in the film deposition process is avoided, the uniformity and compactness of film deposition and the coverage rate and conformal rate of a film on the surface of a base material hole are improved, the defects of the film are reduced, and the yield is improved. And the method can be applied to a substrate with a high aspect ratio structure to deposit the film, so that the purpose of manufacturing a large-size complicated special-shaped structure device is achieved.

This invention provides a surface acoustic wave (SAW) filter, comprising a piezoelectric layer and interdigitated electrodes. The interdigitated electrodes are disposed on the piezoelectric layer and include at least a first metal layer and a second metal layer stacked together. The first metal layer is made of platinum or an alloy with platinum as the main component, and the second metal layer is made of aluminum or an alloy with aluminum as the main component. By setting the material of the second metal layer to aluminum or an alloy with aluminum as the main component, the uniformity of metal coverage of the electrode structure can be effectively improved, avoiding excessive local resistance or structural defects caused by poor coverage. Setting the material of the first metal layer to platinum or an alloy with platinum as the main component provides reliable support for the second metal layer, reducing the risk of deformation or corrosion of the aluminum layer in subsequent processes. By using a stacked structure of two complementary materials for the interdigitated electrodes, both structural miniaturization and improved overall electrical performance and structural reliability of the interdigitated electrodes are achieved.

The invention provides a plasma generating device and a control method. The plasma generating device comprises a process cavity; the carrying table is used for carrying a substrate; the carrying platform is mounted at the bottom of the process cavity; the target material back plate is mounted at the top of the process cavity; a negative electrode of the direct-current power supply is connected with the target material back plate, and the direct-current power supply is used for outputting and applying a first negative high voltage Vnegative 1 to the target material back plate; the negative electrode of the controllable high-voltage power supply is connected with the high-voltage electrode plate, and the controllable high-voltage power supply is used for outputting and applying second negative high voltage V negative 2 to the high-voltage electrode plate; the first negative high voltage Vnegative 1 and the second negative high voltage Vnegative 2 are used for superposing to generate a high-voltage electric field on the surface of the target material; the controller is used for controlling the controllable high-voltage power supply to automatically adjust the second negative high voltage Vnegative 2 according to the voltage change of the first negative high voltage Vnegative 1; according to the invention, glow discharge of process gas is facilitated, and plasma formation is promoted; and the atom utilization rate and the step coverage rate of the hole filling process can be improved.

The present invention provides a substrate processing method, a method for manufacturing a semiconductor device, a substrate processing device and a recording medium, which can improve the step coverage performance of a film formed on a substrate. The substrate processing method of the present invention includes: (a1) a process of supplying a processing gas in a manner that the processing gas is transported to an edge region of the substrate faster than the processing gas is transported to a central region of the substrate, (a2) a process of supplying a processing gas in a manner that the processing gas is transported to a central region of the substrate faster than the processing gas is transported to an edge region of the substrate, and (b) a process of supplying a reaction gas to the substrate.

The application belongs to the technical field of semiconductor manufacturing, and discloses an inert gas assisted pixel planarization etching method, which comprises the following steps: etching a ROIC wafer with a metal column and a dielectric layer by using a mixed plasma containing fluorine-containing gas and oxygen-containing gas, and stopping etching when the metal column is completely exposed or slightly exposed; after the first step of etching is completed, stop feeding the fluorine-containing gas and the oxygen-containing gas, feed inert gas, and etch the surface of the ROIC wafer by using the inert gas plasma. By separating and combining the high-selectivity chemical etching and the low-selectivity physical polishing etching function, on the basis of controlling the first etching time to prevent the formation of pits, the second inert gas physical sputtering is used for surface smoothing and metal column height fine adjustment, the high planarity of the metal column and the dielectric layer surface is realized, the ideal interface foundation is provided for subsequent electrode deposition, and the device performance and the yield are improved.

The invention belongs to the technical field of semiconductor manufacturing processes, and particularly relates to a method for improving metal step coverage of a device. Comprising the following steps: providing a wafer; a wafer is installed, the wafer is installed on a small target of the planetary plate, and the planetary plate is installed in equipment; by rotating the clamping angle of the wafer, the distribution direction of the metal strips in the device is changed, and metal step coverage is improved; the rotating angle of the rotating shaft ranges from 45 degrees to 135 degrees; preparing a metal film, namely preparing the metal film on the surface of the wafer by adopting a metal evaporation process; performing metal photoetching; metal corrosion; and inspection and measurement are carried out, a microscope is adopted for microscopic examination, an electron microscope is adopted for testing, the surface appearance and morphology of the wafer are subjected to microscopic examination, and the width of the metal strip is measured. According to the invention, the mounting angle of the wafer is changed, the direction of the metal step is changed, and the step morphology of the metal strip in the device is improved.

According to the method for filling the interlayer dielectric layer in the high aspect ratio structure, heavy inert gas Kr is used as a diffusion additive in the reaction process of SiH4 and O2, and the molecular / atomic mass of SiH4 and O2 is smaller than that of the inert gas Kr, so that the heavy inert gas Kr can improve the molecular diffusivity of SiH4 and O2 at the same reaction temperature, and the diffusion performance of SiH4 and O2 is improved. SiH4 and O2 are more easily diffused to the deep part of the high-aspect-ratio structure to react, filling of the high-aspect-ratio structure is facilitated, cavities are not easy to form, in addition, heavy inert gas Kr can preferentially impact precursor gas molecules on the surface of the upper portion of the step, falling of the precursor gas molecules is accelerated, and the performance of the high-aspect-ratio structure is improved. Therefore, the staying time of precursor gas molecules on the upper surface of the step is shortened, and the step coverage rate of the formed interlayer dielectric layer is improved.

The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a small-size contact hole manufacturing method. The manufacturing method of the small-size contact hole comprises the following steps of sequentially depositing and forming a protective layer, a dielectric layer and a photoresist layer on a copper interconnection structure; defining a small-size contact hole pattern in the photoresist layer; based on the photoresist layer with the small-size contact hole pattern, the dielectric layer is etched until the protection layer is exposed, and a contact hole primary structure is formed; removing the photoresist layer and then depositing a barrier layer, wherein the barrier layer is filled in the contact hole primary structure; the barrier layer is etched back, so that the upper aperture of the contact hole primary structure which is not covered by the barrier layer is expanded to form a trumpet shape; the remaining barrier layer is removed, a contact hole is formed, and the contact hole comprises a straight lower part and a trumpet-shaped upper part which are communicated with each other; and removing the protective layer deposited aluminum at the position of the contact hole, wherein the contact hole is filled with the aluminum.

The present invention relates to a thin film forming method using a thin film precursor compound, a semiconductor substrate prepared thereby, and a semiconductor device, and according to the present invention, there is provided a thin film precursor compound, a thin film forming method using the same, and a semiconductor substrate prepared thereby, using a thin film precursor compound represented by a prescribed chemical formula 2, the present invention has the effects of very fast deposition speed, easy handling when injected into a thin film deposition chamber, particularly, very high purity and excellent step coverage due to significant thermal stability, and further, by suppressing a side reaction, a thin film growth rate is reduced, and even when a thin film is formed on a substrate having a complex structure, the thin film can be easily deposited on a substrate having a complex structure. According to the present invention, the step coverage and the thickness uniformity of the thin film can be substantially improved, and the density of the thin film can be improved, thereby substantially improving the electrical characteristics of the thin film.

The invention discloses a magnetic-core-free arched MEMS inductor and a preparation method, and belongs to the technical field of semiconductors. The arched MEMS inductor without the magnetic core comprises a glass substrate, an inductor coil, a fuse bonding pad and a non-photosensitive polyimide coating, the inductor coil comprises an inductor bottom coil and an inductor top arched coil, the fuze bonding pad comprises a first fuze bonding pad and a first connecting line thereof, and a second fuze bonding pad and a second connecting line thereof, and the inductor bottom coil, the first fuze bonding pad and the first fuze bonding pad are electroplated on the glass substrate. The two ends of the inductor coil are connected with the first fuze bonding pad and the second fuze bonding pad respectively, the non-photosensitive polyimide coating is attached to the surface of the glass substrate and serves as a supporting layer of the inductor top arch coil, and the inductor top arch coil and the non-photosensitive polyimide coating follow the shape. The top surface of the fuze pad and the top surface of the inductor top arch coil are not covered by the non-photosensitive polyimide coating. By using the method, the preparation time is shortened by 15-20%.

The invention discloses an organic small molecule inhibitor and an application method thereof in thin film deposition, belonging to the technical field of semiconductor processing. The inhibitor comprises urea compounds, amino acid compounds and amidine compounds. The application method is as follows: placing a HAR substrate into an atomic layer deposition device, placing the organic small molecule inhibitor in a stainless steel source bottle and introducing it into a reaction chamber in a pulsed form, placing a precursor in a stainless steel source bottle, using an inert gas as a carrier gas, and introducing the precursor into the reaction chamber in a pulsed form; introducing an oxygen source into the reaction chamber in a pulsed form to generate an oxide film; introducing an inert gas into the reaction chamber to purge excess oxygen source and reaction by-products, and repeating the above steps until a preset thickness is reached. Compared with reported inhibitor molecules, the inhibitor of the invention has two or more N and O atoms in its molecular structure, can form multiple hydrogen bonds, has a better inhibition effect, and significantly improves the step coverage.

A method for forming a semiconductor structure comprises the steps that a substrate is provided, the substrate is provided with at least two selection grids, openings are formed between the adjacent selection grids, the selection grids are arranged in the first direction, and the first direction is parallel to the surface of the substrate; forming a floating gate layer on the surface of the opening and the top surface of the selection gate; forming a first sacrificial layer in the opening and on the surface of the floating gate layer at the top of the selection gate; and forming a second sacrificial layer on the first sacrificial layer. The first sacrificial layer and the second sacrificial layer are adopted as the sacrificial layers for forming the floating gate, compared with the scheme that only the first sacrificial layer is adopted as the sacrificial layer for forming the floating gate in the prior art, the thickness of the first sacrificial layer is reduced, and the second sacrificial layer with good step coverage rate and gap filling capability is formed on the first sacrificial layer; the possibility of hole occurrence is reduced, and the performance of the semiconductor device is improved.

The invention relates to a method for improving the step coverage rate of a thin film material in a semiconductor manufacturing process. The method comprises the following steps of: depositing the thin film material on a (non-planar) structure with a certain depth-to-width ratio; obtaining step coverage rate data of the thin film material; selecting an atomic layer etching (ALE) chemical reaction for the thin film material; parameters of the ALE process are adjusted, so that the step coverage rate of the ALE process is smaller than that of the thin film material; and performing atomic layer etching on the thin film material by using the selected ALE reaction and parameters. And if necessary, repeating the etching or deposition-etching circulation step until the required target step coverage rate is reached. According to the invention, the step coverage rate of a thin film material can be improved to a height which cannot be reached by a thin film deposition technology, so that the performance and yield of a semiconductor device can be improved. The invention provides a new way for the continuous development of the semiconductor technology.

The present application provides a kind of gas deposition device and substrate processing method.The gas deposition device includes: reaction cavity, for carrying out gas deposition process;Substrate support assembly for carrying substrate, it is arranged below the reaction cavity;Gas shower head is oppositely arranged with the substrate support assembly, it is located above the reaction cavity, the substrate support assembly and the gas shower head between form a gas-filled space, the gas-filled space can be switched in high pressure state and low pressure state;The upper surface of the substrate support assembly has the center area of carrying substrate and the edge area around the center area, the edge area and the lower surface of the gas shower head opposite between during the gas deposition process, there is variable interval value, the interval value in the high pressure state is less than the interval value in the low pressure state.The present application can guarantee step coverage and improve processing efficiency.

The application provides a manufacturing method of an image sensor. The manufacturing method comprises the following steps: providing a substrate, the substrate having an isolation structure, the top surface of the isolation structure protruding from the top surface of the substrate; forming a silicon nitride material layer on the substrate by using a low-pressure chemical vapor deposition process, the silicon nitride material layer covering the top surface of the substrate and the isolation structure; coating a photoresist on the silicon nitride material layer to form a second photoresist layer, exposing and developing the second photoresist layer to form a patterned second photoresist layer; taking the patterned second photoresist layer as a mask to etch the silicon nitride material layer to form a patterned second hard mask layer; and taking the patterned second hard mask layer as a mask to etch the substrate to form a groove accommodating a vertical transfer gate. In this way, the photolithography process window of the vertical transfer gate in the image sensor can be expanded, and the Hole miss phenomenon in the manufacturing process of the vertical transfer gate can be effectively reduced.

The present application relates to a growth inhibitor for film formation, a film formation method using the same, and a semiconductor substrate manufactured thereby. Specifically, it relates to a growth inhibitor for film formation which is a compound represented by Chemical Formula 1, a film formation method using the same, and a semiconductor substrate manufactured thereby, [Chemical Formula 1] AnB m X o Y i Z j wherein A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X is one or more selected from fluorine, chlorine, bromine, and iodine; Y and Z are each independently one or more selected from oxygen, nitrogen, sulfur, and fluorine, and are different from each other; n is an integer of 1 to 15; o is an integer of 1 or more; m is 0 to 2n+1; i and j are each an integer of 0 to 3. The present application can suppress side reactions, reduce film growth rate, and remove process by-products in the film, thereby greatly improving step coverage and thickness uniformity of the film even when forming a film on a substrate having a complex structure.

The present invention relates to a method for preparing a tungsten plug, which belongs to the field of semiconductor manufacturing, and comprises: providing a substrate containing a contact hole; sequentially performing adhesion layer deposition and barrier layer deposition on the surface of the contact hole, and then sequentially performing tungsten mixed layer deposition, tungsten body layer deposition and removal operations to form a tungsten plug; wherein the tungsten mixed layer deposition comprises sequentially performing tungsten layer deposition and boron tungsten silicon layer deposition, the flow ratio of tungsten hexafluoride and silane in the tungsten layer deposition is (3-4):1, the flow ratio of borane and silane in the boron tungsten silicon layer deposition is (0.3-0.8):1, and the thickness of the tungsten layer obtained by the tungsten layer deposition is greater than the thickness of the boron tungsten silicon layer obtained by the boron tungsten silicon layer deposition. The preparation method provided by the present invention controls the deposition process parameters for forming the tungsten mixed layer, so that the tungsten layer obtained when the tungsten body layer is subsequently deposited in the contact hole has a good step coverage, avoids the formation of holes, gaps and other defects inside the tungsten plug, and is conducive to ensuring that the inside of the tungsten plug has good compactness.

The invention provides a physical vapor deposition method for improving step coverage rate, which comprises the following steps of: firstly, introducing first inert gas and halogen gas into a magnetron sputtering cavity, and forming a metal halide film layer on the surface of a target material; secondly, second inert gas is introduced into the magnetron sputtering cavity, the metal halide film layer is removed, and a rough target material surface is obtained; and finally, sputtering a metal film. According to the embodiment of the invention, the metal halide film layer is sputtered on the surface of the target material, and then the metal halide film layer is removed, so that the surface of the target material has certain roughness, and atoms sputtered from the surface of the target material are still distributed symmetrically by taking the normal of the surface of the target material as an axis. The sputtering atoms are moved to the micropores or the grooves at a large incidence angle with the surface of the wafer after being far away from the target surface, so that the step coverage rate is improved, a special magnetic controller does not need to be additionally arranged, carrier radio frequency power does not need to be arranged, and a collimator structure does not need to be additionally arranged, so that the process complexity is greatly reduced, and the cost is reduced.

The embodiment of the present invention provides a method for forming a film layer, comprising: providing a substrate; performing a pretreatment step, wherein the pretreatment step comprises providing a reaction source gas, wherein the reaction source gas forms an attachment point on the substrate; and performing a deposition step, wherein the reaction source gas is plasmatized to form a plasma, wherein the plasma is deposited on the substrate based on the attachment point to form a first film layer. The embodiment of the present invention is conducive to forming more attachment points on the surface of the substrate, improving the deposition rate, rapidly depositing the film layer, and improving the step coverage of the film layer, thereby improving the quality of the film layer.

The invention discloses a process method and process equipment for thin film deposition. The process method comprises the following steps: introducing a precursor into a substrate, wherein the surface of the substrate comprises a plurality of gaps; and sputtering gas is introduced, and first radio frequency energy is provided, so that the sputtering gas is dissociated into plasma to bombard the upper surface of the gap, the precursor on the upper surface of the gap is removed, and the amount of the precursor on the upper surface of the gap is smaller than the amount of the precursor in the gap. By executing the steps, the deposition rate of the upper surface of the gap can be reduced, but the deposition rate in the gap is not influenced, so that the step coverage rate in the gap can be enhanced and the gap filling capability in the deposition process can be improved under the condition of not increasing the reaction source consumption, the time length and the process complexity.

The present invention relates to a composition for modifying a thin film, a method for forming a thin film using the same, a semiconductor substrate manufactured by the method, and a semiconductor device, in which the composition for modifying a thin film uses both a masking material and a diffusion improving material to improve the reaction speed and appropriately reduce the growth rate of a thin film, thereby improving the yield of the thin film. According to the present invention, even if a thin film is formed on a substrate having a complicated structure under a high temperature condition, step coverage and thickness uniformity of the thin film can be greatly improved, and impurities are reduced, thereby having an effect of improving film quality.