8results about How to "Good step coverage" patented technology

The invention belongs to the field of thin films, and particularly discloses an atomic layer deposition method and a thin film prepared through the atomic layer deposition method. According to the deposition method, the reaction cavity, the two input pipeline systems, the outlet valve and the vacuum pump in the atomic layer deposition system are used for controlling precursor pulse deposition and inert gas purging conditions in the atomic deposition process, and the film deposition state is improved; the efficiency of purging and removing substances and impurity residues such as a precursor and a reaction product thereof is improved, the problem that the quality of a deposited film is affected by the impurity residues in a reaction system or on the surface of a sample in the film deposition process is avoided, the uniformity and compactness of film deposition and the coverage rate and conformal rate of a film on the surface of a base material hole are improved, the defects of the film are reduced, and the yield is improved. And the method can be applied to a substrate with a high aspect ratio structure to deposit the film, so that the purpose of manufacturing a large-size complicated special-shaped structure device is achieved.

This invention provides a surface acoustic wave (SAW) filter, comprising a piezoelectric layer and interdigitated electrodes. The interdigitated electrodes are disposed on the piezoelectric layer and include at least a first metal layer and a second metal layer stacked together. The first metal layer is made of platinum or an alloy with platinum as the main component, and the second metal layer is made of aluminum or an alloy with aluminum as the main component. By setting the material of the second metal layer to aluminum or an alloy with aluminum as the main component, the uniformity of metal coverage of the electrode structure can be effectively improved, avoiding excessive local resistance or structural defects caused by poor coverage. Setting the material of the first metal layer to platinum or an alloy with platinum as the main component provides reliable support for the second metal layer, reducing the risk of deformation or corrosion of the aluminum layer in subsequent processes. By using a stacked structure of two complementary materials for the interdigitated electrodes, both structural miniaturization and improved overall electrical performance and structural reliability of the interdigitated electrodes are achieved.

The application belongs to the technical field of semiconductor manufacturing, and discloses an inert gas assisted pixel planarization etching method, which comprises the following steps: etching a ROIC wafer with a metal column and a dielectric layer by using a mixed plasma containing fluorine-containing gas and oxygen-containing gas, and stopping etching when the metal column is completely exposed or slightly exposed; after the first step of etching is completed, stop feeding the fluorine-containing gas and the oxygen-containing gas, feed inert gas, and etch the surface of the ROIC wafer by using the inert gas plasma. By separating and combining the high-selectivity chemical etching and the low-selectivity physical polishing etching function, on the basis of controlling the first etching time to prevent the formation of pits, the second inert gas physical sputtering is used for surface smoothing and metal column height fine adjustment, the high planarity of the metal column and the dielectric layer surface is realized, the ideal interface foundation is provided for subsequent electrode deposition, and the device performance and the yield are improved.

The invention belongs to the technical field of semiconductor manufacturing processes, and particularly relates to a method for improving metal step coverage of a device. Comprising the following steps: providing a wafer; a wafer is installed, the wafer is installed on a small target of the planetary plate, and the planetary plate is installed in equipment; by rotating the clamping angle of the wafer, the distribution direction of the metal strips in the device is changed, and metal step coverage is improved; the rotating angle of the rotating shaft ranges from 45 degrees to 135 degrees; preparing a metal film, namely preparing the metal film on the surface of the wafer by adopting a metal evaporation process; performing metal photoetching; metal corrosion; and inspection and measurement are carried out, a microscope is adopted for microscopic examination, an electron microscope is adopted for testing, the surface appearance and morphology of the wafer are subjected to microscopic examination, and the width of the metal strip is measured. According to the invention, the mounting angle of the wafer is changed, the direction of the metal step is changed, and the step morphology of the metal strip in the device is improved.

According to the method for filling the interlayer dielectric layer in the high aspect ratio structure, heavy inert gas Kr is used as a diffusion additive in the reaction process of SiH4 and O2, and the molecular / atomic mass of SiH4 and O2 is smaller than that of the inert gas Kr, so that the heavy inert gas Kr can improve the molecular diffusivity of SiH4 and O2 at the same reaction temperature, and the diffusion performance of SiH4 and O2 is improved. SiH4 and O2 are more easily diffused to the deep part of the high-aspect-ratio structure to react, filling of the high-aspect-ratio structure is facilitated, cavities are not easy to form, in addition, heavy inert gas Kr can preferentially impact precursor gas molecules on the surface of the upper portion of the step, falling of the precursor gas molecules is accelerated, and the performance of the high-aspect-ratio structure is improved. Therefore, the staying time of precursor gas molecules on the upper surface of the step is shortened, and the step coverage rate of the formed interlayer dielectric layer is improved.

The present application provides a kind of gas deposition device and substrate processing method.The gas deposition device includes: reaction cavity, for carrying out gas deposition process;Substrate support assembly for carrying substrate, it is arranged below the reaction cavity;Gas shower head is oppositely arranged with the substrate support assembly, it is located above the reaction cavity, the substrate support assembly and the gas shower head between form a gas-filled space, the gas-filled space can be switched in high pressure state and low pressure state;The upper surface of the substrate support assembly has the center area of carrying substrate and the edge area around the center area, the edge area and the lower surface of the gas shower head opposite between during the gas deposition process, there is variable interval value, the interval value in the high pressure state is less than the interval value in the low pressure state.The present application can guarantee step coverage and improve processing efficiency.

The application provides a manufacturing method of an image sensor. The manufacturing method comprises the following steps: providing a substrate, the substrate having an isolation structure, the top surface of the isolation structure protruding from the top surface of the substrate; forming a silicon nitride material layer on the substrate by using a low-pressure chemical vapor deposition process, the silicon nitride material layer covering the top surface of the substrate and the isolation structure; coating a photoresist on the silicon nitride material layer to form a second photoresist layer, exposing and developing the second photoresist layer to form a patterned second photoresist layer; taking the patterned second photoresist layer as a mask to etch the silicon nitride material layer to form a patterned second hard mask layer; and taking the patterned second hard mask layer as a mask to etch the substrate to form a groove accommodating a vertical transfer gate. In this way, the photolithography process window of the vertical transfer gate in the image sensor can be expanded, and the Hole miss phenomenon in the manufacturing process of the vertical transfer gate can be effectively reduced.

The present application relates to a growth inhibitor for film formation, a film formation method using the same, and a semiconductor substrate manufactured thereby. Specifically, it relates to a growth inhibitor for film formation which is a compound represented by Chemical Formula 1, a film formation method using the same, and a semiconductor substrate manufactured thereby, [Chemical Formula 1] AnB m X o Y i Z j wherein A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X is one or more selected from fluorine, chlorine, bromine, and iodine; Y and Z are each independently one or more selected from oxygen, nitrogen, sulfur, and fluorine, and are different from each other; n is an integer of 1 to 15; o is an integer of 1 or more; m is 0 to 2n+1; i and j are each an integer of 0 to 3. The present application can suppress side reactions, reduce film growth rate, and remove process by-products in the film, thereby greatly improving step coverage and thickness uniformity of the film even when forming a film on a substrate having a complex structure.