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1498results about How to "Improve leakage" patented technology
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Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material
InactiveUS7201943B2Easy to integrateHigh dielectric constantVacuum evaporation coatingSemiconductor/solid-state device manufacturingGate dielectricTitanium
A thin film is formed using an atomic layer deposition process, by introducing a first reacting material including tantalum precursors and titanium precursors onto a substrate. A portion of the first reacting material is chemisorbed onto the substrate. Then, a second reacting material including oxygen is introduced onto the substrate. A portion of the second reacting material is also chemisorbed onto the substrate, to form an atomic layer of a solid material on the substrate. The solid material may be used as a dielectric layer of the capacitor and / or a gate dielectric layer of the transistor.
Owner:SAMSUNG ELECTRONICS CO LTD
Method of forming a dielectric layer and method of manufacturing a semiconductor device using the same
InactiveUS20110159680A1Low impurity contentExcellent shrinkage and etch propertySolid-state devicesSemiconductor/solid-state device manufacturingOxideSemiconductor
In a method of forming an aluminum oxide layer, an aluminum source gas and a dilution gas can be supplied into a chamber through a common gas supply nozzle so that the aluminum source gas may be adsorbed on a substrate in the chamber. A first purge gas can be supplied into the chamber to purge the physically adsorbed aluminum source gas from the substrate. An oxygen source gas may be supplied into the chamber to form an aluminum oxide layer on the substrate. A second purge gas may be supplied into the chamber to purge a reaction residue and the physically adsorbed remaining gas from the substrate. The operations can be performed repeatedly to form an aluminum oxide layer having a desired thickness.
Owner:SAMSUNG ELECTRONICS CO LTD
Semiconductor wafer with well contacts on back side
InactiveUS6864156B1Little source-to-wellImprove leakageTransistorSolid-state devicesCapacitanceEngineering
A supporting structure is wafer-bonded to the upper face side of a partially or fully processed device wafer. The device wafer includes a transistor having a well region that extends into the substrate material of the device wafer. The source and drain regions of the transistor extend into the well region. After attachment of the supporting structure, the device wafer is thinned from the back side until the bottom of the well region is reached. To reduce source and drain junction capacitances, etching can continue until the source and drain regions are reached. In one embodiment, all of the well-to-substrate junction is removed in a subsequent etching step, thereby reducing or eliminating the well-to-substrate junction capacitance of the resulting transistor. Resistance between the well electrode and the transistor channel is reduced because the well contact is disposed on the back side of the device wafer directly under the gate of the transistor.
Owner:XILINX INC
Needleless luer access connector
InactiveUS6908459B2Improve sealingPrevent leakageInfusion devicesMedical devicesDistal portionEngineering
A needleless luer access connector is disclosed having a septum disposed in a housing. The septum has a proximal portion with a cross section, a medial portion with a cross section smaller than the cross section of the proximal portion, and a distal portion. A longitudinal slit extends through the septum from the proximal portion to the distal portion. The septum and housing are designed so that septum will not be rotated or removed from the housing when the connector is accessed by a male luer taper. In addition, the septum and housing are designed to bias the slit at the distal portion closed and so a male luer connector does not have to extend completely through the distal portion to open the slit at the distal portion. Finally, the septum and housing are designed to minimize the amount of dead space in the connector when accessed with a male luer taper.
Owner:BECTON DICKINSON & CO
Intervertebral disc implant resistant to migration
InactiveUS20050033440A1Reduce long-term negative consequenceImprove leakageSuture equipmentsInternal osteosythesisSpinal Disk ImplantMedicine
Devices for implantation into an intervertebral disc can include a membrane support member to augment a disc having a defect. A defect in the anulus of a disc can be repaired using a prosthesis such as a barrier. The barrier can include a sealant and an enlarger. The barrier can be implanted into the disc using a delivery cannula, an advancer and at least one control filament to control the positioning of the barrier. A stiffening element can be included within the barrier to impart stiffness to the barrier. The support member can also be connected to an anchor.
Owner:INTRINSIC THERAPEUTICS
Respiratory Therapy System Including a Nasal Cannula Assembly
InactiveUS20080051674A1Improve fatigueIncrease inhalationOperating means/releasing devices for valvesPhysical therapyNasal cavityInhalation
A nasal cannula, for supplying a respiratory gas to a patient, comprising: a pair of spaced apart supply lines which each have a head at one end thereof with a discharge opening therein. The opposite end of each supply line is connectable to a respiratory gas source. Each head is sized to be snugly received and retained within one of the nasal cavities of the patient while forming a sufficient leakage passage, between a portion of inwardly facing nasal cavity skin of a patient and a portion of an exterior surface of the head, to facilitate exhausting of any excess respiratory gas supplied to the patient through the leakage passage and also facilitate inhalation of any room air required in excess of the respiratory gas to be supplied to the patient. The invention also relates to a respiratory therapy system incorporating the nasal cannula, a method of treating a patient with sleep disorder by using the nasal cannula, a diagnostic tool for measuring nasal cavity pressure of a patient, and a method of using the diagnostic tool for measuring nasal cavity pressure of a patient.
Owner:SALTER LABS LLC
Respiratory mask seal and mask using same
ActiveUS20060096598A1Reduce resonance effectManufacturing process is complicatedRespiratory masksBreathing masksElastomerEngineering
A seal and a mask using a seal that includes a first end portion adapted to be coupled to a seal support, a second end portion adapted for sealing engagement with a face of a user, and a sidewall extending between the first end portion and the second end portion. The first end portion, second end portion, sidewall, or any combination thereof is formed from an elastomeric material having an elongation of at least 1000%. The seal preferably formed from a unitary piece of elastomeric material.
Owner:PHILIPS RS NORTH AMERICA LLC
Method for forming self-aligned contact in semiconductor device
ActiveUS20050239282A1Prevent short-circuitingRule out the possibilitySemiconductor/solid-state device manufacturingDevice materialEngineering
A method for forming a self-aligned contact on a semiconductor substrate provided with a plurality of field-effect transistors. The method comprises the steps of forming a first insulating layer comprising a nitride along a profile of a gate structure and a junction region, forming a temporary layer comprising a doped oxide on the first insulating layer, removing a portion of the temporary layer by performing a selective etch of the oxide with a mask while leaving a plug portion of the temporary layer over the junction region, forming a second insulating layer comprising an undoped oxide in a region where the portion of the temporary layer is removed, removing the plug portion by performing a selective etch of the undoped oxide to form a contact hole, removing a portion of the first insulating layer at a bottom of the contact hole, and forming a conductive contact in the contact hole.
Owner:NAN YA TECH
Shaft seal and turbine using the same
InactiveUS6343792B1High sealing capabilityReduce leakageEngine sealsPiston ringsGas turbinesEngineering
A shaft seal having a high abrasion resistance is disclosed, by which the leakage of the gas from the high-pressure side to the low-pressure side can be reduced. In the shaft seal, flexible leaves are multi-layered to form a ring shape. The shaft seal is mainly arranged around the rotation shaft of a gas turbine or the like. The relevant turbine comprises a casing, a compressor, a rotation shaft, moving blades attached to the rotation shaft, and stationary blades attached to the casing in a manner such that the stationary blades face the moving blades, wherein the shaft seals are provided between a plurality of stationary blades and the rotation shaft wherein the leaves of each shaft seal contact the rotation shaft. Under the rated operating conditions, the top ends of the leaves slightly separate from the surface of the rotation shaft due to the dynamic pressure generated by the rotation of the rotation shaft. When the turbine is not operated, the top ends of the leaves contact the rotation shaft again due to the elastic restoring force of the leaves.
Owner:MITSUBISHI HEAVY IND LTD
Methods and apparatus for atrioventricular valve repair
ActiveUS8043368B2Improve leakageEasy to operateSuture equipmentsHeart valvesPapillary muscleRepair method
Methods and apparatus for use in repairing an atrioventricular valve in a patient are provided. The methods comprise accessing the patient's atrioventricular valve percutaneously, securing a fastening mechanism to a valve leaflet, and coupling the valve leaflet, while the patient's heart remains beating, to at least one of a ventricular wall adjacent the atrioventricular valve, a papillary muscle, at least one valve chordae, and a valve annulus to facilitate reducing leakage through the valve.
Owner:CRABTREE TRAVES DEAN
Quasi-plannar and FinFET-like transistors on bulk silicon
The types of quasi-planar CMOS and FinFET-like transistor devices on a bulk silicon substrate are disclosed. A first device has a doped and recessed channel formed in a shallow trench sidewall. A second device has a doped, recessed channel and has a plurality of edge-fins juxtaposed on an edge of an active region of the device. A third device has an undoped recessed channel formed in a sidewall of a shallow trench, wherein the undoped recessed channel further has a plurality of edge-fins disposed thereon. Additionally, an extra mask may be added to each device to allow for fabrication of both conventional transistors and FinFET-like transistors on bulk silicon. The extra mask may protect the source and drain areas from recess etching of the silicon substrate. Several methods of fabricating each device are also disclosed.
Owner:TAIWAN SEMICON MFG CO LTD
Soi transistor having a reduced body potential and a method of forming the same
ActiveUS20070252205A1Reduce hysteresis effectsImprove compatibilitySolid-state devicesSemiconductor/solid-state device manufacturingJunction leakageCharge carrier
By introducing a atomic species, such as carbon, fluorine and the like, into the drain and source regions, as well as in the body region, the junction leakage of SOI transistors may be significantly increased, thereby providing an enhanced leakage path for accumulated minority charge carriers. Consequently, fluctuations of the body potential may be significantly reduced, thereby improving the overall performance of advanced SOI devices. In particular embodiments, the mechanism may be selectively applied to threshold voltage sensitive device areas, such as static RAM areas.
Owner:ADVANCED MICRO DEVICES INC
Needleless luer access connector
InactiveUS7713250B2Improve leakageQuantity minimizationValve arrangementsInfusion syringesDistal portionEngineering
Owner:BECTON DICKINSON & CO
Avoiding errors in a flash memory by using substitution transformations
InactiveUS20080158948A1Reduce impactImprove reliabilityMemory loss protectionRead-only memoriesMemory cellAlgorithm
Owner:RAMOT AT TEL AVIV UNIV LTD
Control system for stopping and starting vehicle engine
ActiveUS6913558B2Degradation can be preventedEngagement can be preventedAnalogue computers for vehiclesElectrical controlAutomotive engineeringOil pressure
An engine stop and start control system for securing a normal line pressure in a hydraulic circuit of the transmission. The system has an engine as a power source for driving the vehicle; a transmission; a mechanical oil pump, operated by the power produced by the engine, for supplying oil pressure to the transmission; an automatic engine stopping and starting section for automatically stopping the engine under predetermined stopping conditions and automatically starting the engine under predetermined starting conditions; and an electric oil pump operated when the predetermined stopping conditions are satisfied, so as to supply the oil pressure to the transmission. The automatic engine stopping and starting section has a control section for prohibiting the automatic engine stop when the line pressure in a hydraulic circuit for supplying oil pressure to the transmission is equal to or lower than a predetermined value while the engine is operated.
Owner:HONDA MOTOR CO LTD
Method of implanting a dynamically stable spinal implant
InactiveUS20050033441A1Reduce long-term negative consequencePrevent and reduce of and disc height lossSuture equipmentsInternal osteosythesisSpinal columnIntervertebral disc
Devices for implantation into an intervertebral disc can include a membrane support member to augment a disc having a defect. A defect in the anulus of a disc can be repaired using a prosthesis such as a barrier. The barrier can include a sealant and an enlarger. The barrier can be implanted into the disc using a delivery cannula, an advancer and at least one control filament to control the positioning of the barrier. A stiffening element can be included within the barrier to impart stiffness to the barrier. The support member can also be connected to an anchor.
Owner:INTRINSIC THERAPEUTICS
Method of reducing spinal implant migration
InactiveUS20050038519A1Reduce long-term negative consequenceImprove leakageSuture equipmentsInternal osteosythesisSpinal columnIntervertebral disc
Owner:INTRINSIC THERAPEUTICS
Capsule Stable Against Mastication
InactiveUS20080057115A1Good disintegrationExcellent pharmaceutical preparationAntibacterial agentsNervous disorderSlice thicknessMedicine
The present invention relates to a soft capsule which is easily disintegrated in the stomach, wherein the contents thereof are not easily leaked at the time of mastication, which is obtained by providing a soft capsule comprising (2R)-2-propyloctanoic acid or a salt thereof with at least one property, preferably all properties, selected from (A) wherein it has a strength of 150 to 400 N by a cracking test; (B) wherein it has a disintegration time of 3 to 10 minutes by the disintegration test stipulated in Japanese Pharmacopoeia; (C) wherein the capsule shell has a shell thickness of 0.05 to 0.50 mm; (D) wherein the capsule shell has a first seam thickness of 0.10 to 0.55 mm; (E) wherein the capsule shell has a second seam thickness of 0.05 to 0.50 mm; (F) wherein the capsule shell has a water content of 5.0 to 9.0%.
Owner:ONO PHARMA CO LTD
Diaper with baffle overflow protection
InactiveUS20070156110A1Maximum collection capabilityGood prevents leakageBaby linensTamponsWaste productEngineering
An improved diaper or pull up type pant, using attached side walls that are defined from the front to the back of the diaper or pull up type pant, with one or more baffles positioned between said side walls so as to define multiple cavities for the collection and retention of waste. The multiple cavities provide additional barriers, and assist in preventing waste product from moving out of the front top or rear top portion of the pull up type pant or diaper.
Owner:THYFAULT KEVIN
Respiratory therapy system including a nasal cannula assembly
ActiveUS20110125052A1Highly flexible and pliableImprove leakageRespiratorsOther heat production devicesNasal cavityNose
A nasal cannula, for supplying a respiratory gas to a patient, comprising: a pair of spaced apart supply lines which each have a head at one end thereof with a discharge opening therein. The opposite end of each supply line is connectable to a respiratory gas source. Each head is sized to be snugly received and retained within one of the nasal cavities of the patient while forming a sufficient leakage passage, between a portion of inwardly facing nasal cavity skin of a patient and a portion of an exterior surface of the head, to facilitate exhausting of any excess respiratory gas supplied to the patient through the leakage passage and also facilitate inhalation of any room air required in excess of the respiratory gas to be supplied to the patient. The invention also relates to a respiratory therapy system incorporating the nasal cannula, a method of treating a patient with sleep disorder by using the nasal cannula, a diagnostic tool for measuring nasal cavity pressure of a patient, and a method of using the diagnostic tool for measuring nasal cavity pressure of a patient.
Owner:SALTER LABS LLC
Damage and leakage barrier in all-composite pressure vessels and storage tanks
ActiveUS20090314785A1Superior barrier against leakageStrengthAdhesive processesGas handling applicationsFiberAxis of symmetry
A linerless tank structure has a body that defines an enclosed interior volume. The body has a cylindrical section having an axis of symmetry and a dome section coupled with the cylindrical section. The construction of the pressure vessel includes multiple fiber plies. At least one of the fiber plies is a helical ply having fibers traversing the dome helically about the axis of symmetry. At least a second of the fiber plies is a braided or woven ply.
Owner:COMPOSITE TECH DEV
Quasi-plannar and FinFET-like transistors on bulk silicon
The types of quasi-planar CMOS and FinFET-like transistor devices on a bulk silicon substrate are disclosed. A first device has a doped and recessed channel formed in a shallow trench sidewall. A second device has a doped, recessed channel and has a plurality of edge-fins juxtaposed on an edge of an active region of the device. A third device has an undoped recessed channel formed in a sidewall of a shallow trench, wherein the undoped recessed channel further has a plurality of edge-fins disposed thereon. Additionally, an extra mask may be added to each device to allow for fabrication of both conventional transistors and FinFET-like transistors on bulk silicon. The extra mask may protect the source and drain areas from recess etching of the silicon substrate. Several methods of fabricating each device are also disclosed.
Owner:TAIWAN SEMICON MFG CO LTD
Absorbent article
An absorbent article having a substantially oblong rectangular absorbent body A composed of a topsheet 2, a backsheet 3, and an absorbent core 4 between the topsheet 2 and the backsheet 3. The absorbent article further has a pair of side sheets 5 as leak preventive side members on its skin facing side C of the absorbent body A. The leak preventive side members have a pattern P printed with ink in a configuration such that the printed ink is substantially kept away from contact with the skin of a wearer.
Owner:KAO CORP
Technique for forming recessed strained drain/source regions in NMOS and PMOS transistors
ActiveUS20070045729A1High carrier mobilityIncrease flexibilityTransistorSolid-state devicesFloating body effectEngineering
By forming a strained semiconductor layer in a PMOS transistor, a corresponding compressively strained channel region may be achieved, while, on the other hand, a corresponding strain in the NMOS transistor may be relaxed. Due to the reduced junction resistance caused by the reduced band gap of silicon / germanium in the NMOS transistor, an overall performance gain is accomplished, wherein, particularly in partially depleted SOI devices, the deleterious floating body effect is also reduced, due to the increased leakage currents generated by the silicon / germanium layer in the PMOS and NMOS transistor.
Owner:ADVANCED MICRO DEVICES INC
Clamp for joining tubular bodies
InactiveUS6877780B2High strengthImprove leakageSleeve/socket jointsFlanged jointsHermetic sealEngineering
A band clamp used to connect tubular bodies such as vehicle exhaust system components. The band clamp has a band extending from a first end to a second end and includes a pair of spaced ribs extending at least part way between the first and second ends. A tightening mechanism is connected to the band and includes two clamp members movable toward and away from each other for tightening and loosening of the band. The band clamp further includes a gasket located on an inner surface of the band between the ribs and extending between the first and second ends. The use of the ribs with the interposed gasket provides a mechanical interlock of the band clamp with the tubular bodies while providing a hermetic seal at the junction between the two bodies.
Owner:BREEZE TORCA PRODS
Method and apparatus for increasing local plasma density in magnetically confined plasma
ActiveUS7922880B1Easily damagedLow reliabilityCellsElectric discharge tubesPlasma densityHigh density
Local plasma density, e.g., the plasma density in the vicinity of the substrate, is increased by providing an ion extractor configured to transfer ions and electrons from a first region of magnetically confined plasma (typically a region of higher density plasma) to a second region of plasma (typically a region of lower density plasma). The second region of plasma is preferably also magnetically shaped or confined and resides between the first region of plasma and the substrate. A positively biased conductive member positioned proximate the second region of plasma serves as an ion extractor. A positive bias of about 50-300 V is applied to the ion extractor causing electrons and subsequently ions to be transferred from the first region of plasma to the vicinity of the substrate, thereby forming higher density plasma. Provided methods and apparatus are used for deposition and resputtering.
Owner:NOVELLUS SYSTEMS
High precision current sensor
InactiveUS20060043960A1Accurate measurementHigh currentMeasurement using dc-ac conversionMagnetic measurementsCurrent sensorMagnetic flux
A current sensor for measuring an electric current flowing through a current bus bar includes: a magnetic core with an opening, through which the current bus bar passes with a predetermined interval; and a first magnetic sensor for detecting magnetic flux density in the magnetic core, the magnetic flux density generated by the electric current passing through the current bas bar. The magnetic core has a first gap and a second gap. The first magnetic sensor is disposed in the first gap. The second gap is capable of preventing magnetic saturation of the magnetic core.
Owner:DENSO CORP
Ultrasonic atomizer and electronic cigarette
ActiveUS20180161525A1Avoid damageEasy to controlTobacco pipesTobacco devicesElectricityElectrical conductor
The present invention discloses an ultrasonic atomizer and electronic cigarette. The ultrasonic atomizer comprises an atomization piece and a liquid guide structure, which guides liquid onto an upper surface of the atomization piece; the liquid guide structure communicates with a liquid storage cavity; the upper surface of the atomization piece communicates with an airflow passage; and the atomization piece comprises a piezoelectric ceramic layer and an electric conductor, which drives vibration of the piezoelectric ceramic layer. No micropore needs to be provided in the atomization piece of the present invention to eject the atomized gas, thereby being free of the situation that the micropore is blocked by larger atomized gas particles, resulting in that the atomized gas cannot be ejected, and meanwhile the situation of liquid leakage of the atomizer can be better prevented.
Owner:CHINA TOBACCO HUNAN INDAL CORP
Semiconductor device and method for manufacturing the same
ActiveUS20130140554A1Reduce leakageShort channel lengthTransistorSemiconductor/solid-state device manufacturingResistElectron-beam lithography
A semiconductor device including a minute transistor with a short channel length is provided. A gate insulating layer is formed over a gate electrode layer; an oxide semiconductor layer is formed over the gate insulating layer; a first conductive layer and a second conductive layer are formed over the oxide semiconductor layer; a conductive film is formed over the first conductive layer and the second conductive layer; a resist mask is formed over the conductive film by performing electron beam exposure; and then a third conductive layer and a fourth conductive layer are formed over and in contact with the first conductive layer and the second conductive layer, respectively, by selectively etching the conductive film.
Owner:SEMICON ENERGY LAB CO LTD
Diapers with improved leak prevention
The present invention provides diapers with improved leak prevention, especially around the waist of the wearer. Diapers according to the invention may have a guard, for example, a leak-proof guard, to contain what is inside the diaper and thus prevent leaks that could occur without the guard. Diapers according to the invention provide added leak protection particularly on the front and backside of the baby.
Owner:ZHANG FEN +1
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