The application discloses a
silicon dioxide deposition
coating process of a vertical LPCVD device, and comprises the following steps: S1, checking whether the process
pipe leaks; S2, blowing the process
pipe with
nitrogen gas under low pressure; S3, after the
leakage rate detection is qualified,
nitrogen gas is blown into the gas path pipeline, so that the pressure and the gas flow of the process
pipe are stabilized under the pressure and the gas flow conditions set during film deposition; S4, under the set pressure condition, a reaction gas source is introduced, and a
silicon dioxide film is deposited on the surface of a
semiconductor substrate; and S5, after the
silicon dioxide film deposition is completed,
nitrogen gas is blown into the process pipe and the exhaust pipeline,
nitrogen gas is introduced to increase the pressure to normal pressure, and the boat is discharged. The application has the advantages of simple operation, good stability, high film uniformity and the like, solves the problems of poor film thickness uniformity, high process
granularity, poor repeat stability and extremely harsh requirements on process pressure of the existing LPCVD when depositing a SiO2 film, and realizes high-quality
wafer coating.