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30091results about How to "Reduce content" patented technology

Pre-passivation process for a continuous reforming apparatus, and passivation process for a continuous reforming apparatus during the initial reacation

The present invention relates to a pre-passivation process for a continuous reforming apparatus prior to the reaction, or a passivation process for a continuous reforming apparatus during the initial reaction, comprising loading a reforming catalyst into the continuous reforming apparatus, starting the gas circulation and raising the temperature of a reactor, injecting sulfide into the gas at a reactor temperature ranging from 100-650° C., controlling the sulfur amount in the recycle gas within a range of 0.5-100×10−6 L/L so as to passivate the apparatus.
The process of the present invention may also comprise the following steps:
    • (1) loading a reforming catalyst into the continuous reforming apparatus, starting the gas circulation and raising the temperature of a reactor, feeding the reforming feedstock into the reaction system when the temperature of the reactor is increased to 300-460° C., introducing sulfide into the reaction system while or after the reforming feedstock is fed, controlling the ratio of the total sulfur amount introduced into the system to the reforming feedstock within the range of 0.5 μg/g-50 μg/g, reducing the content of sulfide introduced into the system when hydrogen sulfide concentration in the recycle gas reaches to 2.0 μL/L˜30 μL/L; and
    • (2) maintaining the reforming reactor at a temperature of 460-490° C., controlling the ratio of the total sulfur amount introduced into the system to the reforming feedstock within the range of 0.2 μg/g-0.5 μg/g, adjusting the amount of the reforming feedstock to the design value of the apparatus, increasing the reforming reaction temperature to 490-545° C. according to the requirements on the octane number of the liquid product, and letting the reforming apparatus run under normal operating conditions.
Owner:CHINA PETROCHEMICAL CORP +1

Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same

A method of forming a metal nitride film using chemical vapor deposition (CVD), and a method of forming a metal contact and a semiconductor capacitor of a semiconductor device using the same, are provided. The method of forming a metal nitride film using chemical vapor deposition (CVD) in which a metal source and a nitrogen source are used as a precursor, includes the steps of inserting a semiconductor substrate into a deposition chamber, flowing the metal source into the deposition chamber, removing the metal source remaining in the deposition chamber by cutting off the inflow of the metal source and flowing a purge gas into the deposition chamber, cutting off the purge gas and flowing the nitrogen source into the deposition chamber to react with the metal source adsorbed on the semiconductor substrate, and removing the nitrogen source remaining in the deposition chamber by cutting off the inflow of the nitrogen source and flowing the purge gas into the deposition chamber. Accordingly, the metal nitride film having low resistivity and a low content of Cl even with excellent step coverage can be formed at a temperature of 500° C. or lower, and a semiconductor capacitor having excellent leakage current characteristics can be manufactured. Also, a deposition speed, approximately 20 A / cycle, is suitable for mass production.
Owner:SAMSUNG ELECTRONICS CO LTD

Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same

A method of forming a metal nitride film using chemical vapor deposition (CVD), and a method of forming a metal contact and a semiconductor capacitor of a semiconductor device using the same, are provided. The method of forming a metal nitride film using chemical vapor deposition (CVD) in which a metal source and a nitrogen source are used as a precursor, includes the steps of inserting a semiconductor substrate into a deposition chamber, flowing the metal source into the deposition chamber, removing the metal source remaining in the deposition chamber by cutting off the inflow of the metal source and flowing a purge gas into the deposition chamber, cutting off the purge gas and flowing the nitrogen source into the deposition chamber to react with the metal source adsorbed on the semiconductor substrate, and removing the nitrogen source remaining in the deposition chamber by cutting off the inflow of the nitrogen source and flowing the purge gas into the deposition chamber. Accordingly, the metal nitride film having low resistivity and a low content of Cl even with excellent step coverage can be formed at a temperature of 500° C. or lower, and a semiconductor capacitor having excellent leakage current characteristics can be manufactured. Also, a deposition speed, approximately 20 A / cycle, is suitable for mass production.
Owner:SAMSUNG ELECTRONICS CO LTD

Adsorption Desulfurization Process for Hydrocarbons and a Reaction Apparatus Therefor

The present invention relates to an airflow particle sorter, comprising: a top-sealed sorter main body, a discharge port, an outtake tube and at least one directing-intake port; the inner space of the sorter main body, from the above to the bottom, includes, a straight tube zone and a cone zone, the conical bottom of the cone zone is connected to the straight tube zone; the discharge port is located at the bottom of the cone zone; the directing-intake port is installed in the upper part of the straight tube zone in a tangential direction of the straight tube zone, and is communicated with the inner space of the sorter main body; the outtake tube is hermetically inserted into the top of the sorter main body, and extends downwardly to the lower part of the straight tube zone, and the outtake tube has a sealed bottom end; the lower part of the outtake tube is installed with at least one directing-outtake port, which communicates the outtake tube with the inner space of the sorter main body, the directing-outtake port is installed in a tangential direction of the outtake tube. The present invention further relates to a fluidized bed reactor and an adsorption desulfurization reaction apparatus as well as an adsorption desulfurization process.
Owner:CHINA PETROCHEMICAL CORP +1

Method for preparing complexly shaped biomedical porous titanium molybdenum alloy implant body

The invention provides a method for preparing a complexly shaped biomedical porous titanium molybdenum alloy implant body and belongs to the technical field of biomedical porous metallic material preparation. The method comprises the following steps of: taking a mixture of titanium and molybdenum metallic element powder and organic polymer powder as raw materials, and then preparing the biomedical porous titanium molybdenum alloy implant body by adopting the processes, such as three-dimensional modeling, selective laser-firing rapid forming, thermal de-greasing, vacuum sintering, and the like. The processing steps are simple, the period is short, the use ratio of materials is high, the cost is low, any complexly shaped porous titanium alloy implant body can be conveniently manufactured, and the method has efficiency and economic advantages in individual design and rapid manufacturing of the implant body. A titanium molybdenum alloy material prepared by using the method has the advantages that pore space is uniform, adjustment scopes of porosity, aperture ratio and aperture are wide, elasticity modulus and compression strength are in close proximity to natural bone, and the demand on biomechanical compatibility required by a biomedical material is met.
Owner:UNIV OF SCI & TECH BEIJING

Method for preparing medical porous tantalum implant material

The invention discloses a method for preparing a medical porous tantalum material. The method comprises the following steps of: mixing a poly ethanol aqueous solution and tantalum powder to obtain slurry, wherein the mass concentration of the poly ethanol aqueous solution is 2 to 8 percent; injecting the slurry into an organic foam by vibrating and pressurizing, wherein the vibrating frequency is 20 to 80 times/min; drying; degreasing; sintering, namely raising temperature to 1,500 to 1,800 DEG C at the speed of 10 to 20 DEG C/min under the vacuum degree of 10<-4> to 10<-3>Pa, preserving heat for 120 to 240 minutes, cooling to 200 to 300 DEG C along with a furnace, raising temperature to 1,500 to 1,800 DEG C at the speed of 10 to 20 DEG C/min again, preserving heat for 180 to 240 minutes, raising temperature to 2,000 to 2,200 DEG C at the speed of 5 to 10 DEG C/min, and preserving heat for 120 to 360 minutes; cooling; and performing thermal treatment, namely raising temperature to 800 to 900 DEG C at the speed of 10 to 20 DEG C/min under the vacuum degree of 10<-4> to 10<-3> Pa, preserving heat for 240 to 480 minutes, cooling to 400 DGE C at the speed of 2 to 5 DGE C/min, preserving heat for 120 to 300 minutes, and cooling to room temperature along with the furnace. The porous tantalum prepared by the method is very suitable to be used for the medical implant material for replacing bearing bone tissues, and biocompatibility and the mechanical property can be guaranteed simultaneously.
Owner:CHONGQING RUNZE PHARM CO LTD

Method for forming the image in millimetre and sub-millimetre wave band (variants), system for forming the image in millimetre and sub-millimeter wave band (variants), diffuser light (variants) and transceiver (variants)

InactiveUS20060273255A1Minimize level of disturbanceDecrease of its informational contentRadiation pyrometryPhotometryPhysicsWave band
The invention relates to the field of computer diagnostics. The method consists in the steps of forming radiation forming in this wave range, consisting of separate partial radiations, which are different from each other by values of their physical features, directing of the formed radiations into a side of the observed object, receiving a radiation, dispersed from the observed object, through a focusing element, transforming of the received radiation in electrical signals and forming a synthesized enhance image of the observed object by combining said given electrical signals. Besides, each separate partial radiation is additionally distinctly encoded for example by means of its modulation, which differs from a modulation of other partial radiations, the partial radiations are directed to a diffuser for decreasing their spatial coherence and/or their dispersing by means of different portions of the diffuser in order to create an additional distinctly encoded partial radiations with an additional modulation, corresponding to an angle of impingement onto the observed object. After reflecting of the radiation from the observed object the step of focusing of this radiation to a receiving device is realized, which accomplishes a transforming of set of partial radiations in a corresponding array set of electrical signals, there is realized the step of decoding of partial electrical signals, corresponding to said partial radiations, from each of said electrical signals of said array set there are formed partial images from array sets with various partial electrical signals and then an combination of the partial images or their portions is realized in order to form enhanced resultant image of the object.
Owner:ASTRAZENECA AB
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