50results about How to "Reduce film stress" patented technology

Silicon oxide layer is deposited on a semiconductor substrate by PECVD at a temperature of less than about 200° C. and is treated with helium plasma to reduce stress of the deposited layer to an absolute value of less than about 80 MPa. Plasma treatment reduces hydrogen content in the silicon oxide layer, and leads to low stress films that can also have high density and low roughness. In some embodiments, the film is deposited on a semiconductor substrate that contains one or more temperature-sensitive layers, such as layers of organic material or spin-on dielectric that cannot withstand temperatures of greater than 250° C. In some embodiments the silicon oxide film is deposited to a thickness of between about 100-200 Å, and is used as a hardmask layer during etching of other layers on a semiconductor substrate.

A method of forming a transparent hardmask by plasma CVD includes: providing an underlying layer formed on a substrate in a reaction space; introducing an inert gas into the reaction space; introducing a hydrocarbon precursor vapor of an aromatic compound into the reaction space, wherein a flow ratio of the hydrocarbon precursor vapor to the inert gas is less than 0.1; and applying RF power to the reaction space, thereby depositing on the underlying layer a transparent hardmask having a film stress of −300 MPa to 300 MPa.

A capacitor includes a first electrode, a dielectric layer, and a second electrode. The capacitor also includes a buffer layer formed over at least one of an interface between the first electrode and the dielectric layer and an interface between the dielectric layer and the second electrode, wherein the buffer layer includes a compound of a metal element from electrode materials of one of the first and second electrodes and a metal element from materials included in the dielectric layer.

A photomask blank is prepared by forming a light-absorbing film on a transparent substrate, and irradiating the light-absorbing film with light from a flash lamp at an energy density of 3 to 40 J/cm². A photomask is prepared by forming a resist pattern on the photomask blank by photolithography, etching away those portions of the light-absorbing film which are not covered with the resist pattern, and removing the resist.

A method includes a preparation step of preparing a transparent substrate having a precision-polished main surface, a surface shape information obtaining step of obtaining, as surface shape information, height information at a plurality of measurement points on the main surface of the transparent substrate that contacts a mask stage of an exposure apparatus, a simulation step of obtaining, based on the surface shape information and shape information of the mask stage, height information at the plurality of measurement points by simulating the state where the transparent substrate is set in the exposure apparatus, a flatness calculation step of calculating, based on the height information obtained through the simulation, a flatness of the transparent substrate when it is set in the exposure apparatus, a judging step of judging whether or not the calculated flatness satisfies a specification, and a thin film forming step of forming a thin film as serving as a mask pattern, on the main surface of the transparent substrate whose flatness satisfies the specification.

A nanolaminate thin film and a method for forming the same using atomic layer deposition are disclosed. The method includes forming an aluminum oxide layer having a first thickness on at least a portion of a substrate surface by sequentially pulsing a first precursor and a first reactant into an enclosure containing the substrate. A layer of silicon dioxide is formed on at least a portion of the aluminum oxide layer by sequentially pulsing a second precursor and a second reactant into the enclosure to form a nanolaminate thin film.

A porous SiCOH (e.g., p-SiCOH) dielectric film in which the stress change caused by increased tetrahedral strain is minimized by post treatment in unsaturated Hydrocarbon ambient. The inventive p-SiCOH dielectric film has more —(CHx) and less Si—O—H and Si—H bondings as compared to prior art p-SiCOH dielectric films. Moreover, a stable pSiOCH dielectric film is provided in which the amount of Si—OH (silanol) and Si—H groups at least within the pores has been reduced by about 90% or less by the post treatment. Hence, the inventive p-SiCOH dielectric film has hydrophobicity improvement as compared with prior art p-SiCOH dielectric films. In the present invention, a p-SiCOH dielectric film is produced that is flexible since the pores of the inventive film include stabilized crosslinking —(CH_x)— chains wherein x is 1, 2 or 3 therein. The dielectric film is produced utilizing an annealing step subsequent deposition that includes a gaseous ambient that includes at least one C—C double bond and/or at least one C—C triple bond.

A method for manufacturing a metal nitride layer including the following steps is provided. Firstly, a substrate is provided. Then, a physical vapor deposition process is performed at a temperature between 210° C. and 390° C. to form a metal nitride layer on the substrate. Also, the physical vapor deposition process can be performed on a pressure between 21 mTorr and 91 mTorr. The method can be used in the manufacturing process of an interconnection structure for decreasing the film stress of the metal nitride layer. Therefore, the interconnection structure can be prevented from line distortion and film collapse.

A multilayer ceramic electronic component includes a laminate including a stack of a plurality of ceramic layers and a plurality of internal electrodes extending along interfaces between the ceramic layers, and a plurality of external electrodes electrically connecting the internal electrodes exposed at surfaces of the laminate. Each external electrode includes a plating layer at least at the portion directly connected to the internal electrodes. The plating layer has a compressive film stress of about 100 MPa or less or a tensile film stress of about 100 MPa or less.

A method of forming a hard mask includes depositing step for depositing a titanium nitride film on a surface of a to-be-processed object; adsorbing step for adsorbing oxygen-containing molecules onto a surface of the titanium nitride film; and heating step for heating the titanium nitride film to a predetermined temperature.

A method for forming a pattern is provided. First, a substrate is provided. Then, a discontinuous film is formed on the substrate so as to reduce the stress of the film. After that, the discontinuous film is patterned to form a pattern. Besides, a method for manufacturing a thin film transistor (TFT) is also provided. First, a substrate is provided. Then, a poly silicon island is formed on the substrate. After that, a gate insulating layer is formed to cover the poly silicon island. Then, a gate is formed on the gate insulating layer. After that, a source/drain is formed in the poly silicon island below one side and the other side of the gate respectively, and a channel layer is formed between the source/drain. At least one of the poly silicon island and the gate is formed according to the above mentioned method for forming the pattern.

A method for surface treatment is disclosed. The method is achieved by forming a MgO film on a metal surface through anode processing of Mg or Mg alloy in an alkaline solution. The alkaline solution includes a hydroxide, a thickening agent, and a film adjusting agent. As the method is performed, the target object is immersed in the alkaline solution, and the target object is connected to an anode with an average electric current density of 1˜5 A/dm, at a temperature of 0˜30° C., and within a time period of 10˜120 minutes to form a film of 5˜25 μm. The forming rate of the film of the method of the present invention is fast, and the formed film is of little stress.

To provide a mask blank for EUVL wherein the incident angle dependence of EUV reflectivity and the film stress in a Mo/Si multilayer reflective film are improved, and a reflective layer-equipped substrate for such a mask blank. The reflective layer-equipped substrate for EUV lithography (EUVL), comprises a substrate, and a reflective layer for reflecting EUV light, formed on the substrate, wherein the reflective layer comprises a second multilayer reflective film having a Mo layer and a Si layer alternately stacked plural times on the substrate, an adjustment layer stacked on the second multilayer reflective film, and a first multilayer reflective film having a Mo layer and a Si layer alternately stacked plural times on the adjustment layer.

An optical element for X-ray includes a substrate, a first multilayer film having a reflection property with respect to light in a soft X-ray wavelength range, and a second multilayer film, disposed between the substrate and the first multilayer film, for reducing film stress of the first multilayer film. The second multilayer film has a periodic structure having a unit period film thickness which is 90% or more and less than 110% of a two or more integral multiple of 7 nm.

A thermal pixel configured as an electromagnetic emitter and/or an electromagnetic detector. The thermal pixel comprises a micro-platform suspended with semiconductor nanowires from a surrounding support platform. The nanowires comprise phononic structure providing a decrease in thermal conductivity. In some embodiments, the pixel is structured for operation within a broad bandwidth or a limited bandwidth. Metamaterial and/or photonic crystal filters provide pixel operation over a limited bandwidth. In some other embodiments, the micro-platform comprises a nanotube structure providing a broadband emission/absorption spectral response.

The invention discloses a super-long-span dome structure. The super-long-span dome structure comprises multiple variable-cross-section midspan dual-limb cavity giant arches with a joint rotating shaft, upper limbs and lower limbs in the variable-cross-section midspan dual-limb cavity giant arches define cavity structures, two energy dissipating vibration reducing devices are symmetrically mountedin each cavity structure, the energy dissipating vibration reducing devices in the variable-cross-section midspan dual-limb cavity giant arches are located on the same circumference, branch limbs of the upper limbs and the lower limbs are fixedly connected with a first ring truss, at least two giant variable-cross-section space trusses are evenly mounted in an annular interval between the variable-cross-section midspan dual-limb cavity giant arches, the upper end of the giant variable-cross-section space trusses are fixedly connected with a first ring truss, the first ring truss is covered with a first dome surface single-layer net shell, each space is covered with a second dome surface single-layer net shell fixedly connected with the first ring truss, due to the dome structure, the stress property is greatly improved, the structure rigidity is uniform, joint configuration is relatively simple, and in the building process, large geometrically nonlinear deformation cannot be generated.

A laminate has a composite coating on a substrate. The substrate is a polymeric substrate with a surface resistivity of 4×10² to 1×10⁸Ω/□; or a textured substrate with surface features which are 100 nm to 10 microns high. The composite coating comprising a tie layer of a nickel-chromium alloy; a layer of a reflective metal; a layer of aluminum oxide; a layer of silicon oxide; and optionally a layer of indium tin oxide. The laminate has a solar absorbance at a wavelength of 0.25 microns to 2.5 microns of between 0.07 and 0.7; and the laminate has an IR emittance of 0.1 to 0.8. Solar absorbance and IR emittance of the laminate may be independently to control the ratio of solar absorbance to IR emittance. Solar absorbance may be adjusted by changing the surface resistance or degree of texturing on the substrate. IR emittance may be adjusted by changing oxide film thickness.