6304 results about "Pellicle membrane" patented technology

The present invention is directed to methods for patterning a substrate by imprint lithography. An imprint lithography method includes placing a curable liquid on a substrate. A template may be contacted with the curable liquid. Surface forces at the interface of the curable liquid and the template cause the curable liquid to gather in an area defined by a lower surface of the template. Alternately, the curable liquid may fill one or more relatively shallow recesses in the template and the area under the template lower surface. Activating light is applied to the curable liquid to form a patterned layer on the substrate.

A method and apparatus for forming narrow vias in a substrate is provided. A pattern recess is etched into a substrate by conventional lithography. A thin conformal layer is formed over the surface of the substrate, including the sidewalls and bottom of the pattern recess. The thickness of the conformal layer reduces the effective width of the pattern recess. The conformal layer is removed from the bottom of the pattern recess by anisotropic etching to expose the substrate beneath. The substrate is then etched using the conformal layer covering the sidewalls of the pattern recess as a mask. The conformal layer is then removed using a wet etchant.

A process for producing a semiconductor article is provided which comprises the steps of bonding a film onto a substrate having a porous semiconductor layer, and separating the film from the substrate at the porous semiconductor layer by applying a force to the film in a peeling direction.

A film deposition apparatus including a rotational member is rotated by a rotation mechanism around a vertical axis inside a chamber, a pedestal in the chamber and including substrate receiving areas formed along a circle having the vertical axis as a center, and first and second reaction gas supplying parts provided separately along a circumferential direction of the circle and supplying first and second reaction gases to the pedestal, a separating area in the rotational member and between first and second process areas to which first and second reaction gases are supplied, an evacuation port to evacuate an atmosphere inside the chamber, a separation gas supplying part in the separating area for supplying a separation gas, and an opposing surface part in the separating area on both sides of the separation gas supplying part and at a position forming a thin space between the opposing surface part and the pedestal.

In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

Channel doping is an effective method for controlling Vth, but if Vth shifts to the order of -4 to -3 V when forming circuits such as a CMOS circuit formed from both an n-channel TFT and a P-channel TFT on the same substrate, then it is difficult to control the Vth of both TFTs with one channel dope. In order to solve the above problem, the present invention forms a blocking layer on the back channel side, which is a laminate of a silicon oxynitride film (A) manufactured from SiH4, NH3, and N2O, and a silicon oxynitride film (B)manufactured from SiH4and N2O. By making this silicon oxynitride film laminate structure, contamination by alkaline metallic elements from the substrate can be prevented, and influence by stresses, caused by internal stress, imparted to the TFT can be relieved.

Disclosed are methods for preparing electrophoretically deposited graphene based films.

It is an object to provide a manufacturing method by which display devices can be manufactured in quantity without degrading the characteristics of thin film transistors. In a display device including a thin film transistor in which a microcrystalline semiconductor film, a gate insulating film in contact with the microcrystalline semiconductor film, and a gate electrode overlap with each other, an antioxidant film is formed on a surface of the microcrystalline semiconductor film. The antioxidant film on the surface of the microcrystalline semiconductor film can prevent a surface of a microcrystal grain from being oxidized, thereby preventing the mobility of the thin film transistor from decreasing.

Provided is a method of fabricating a ZnO thin film structure and a ZnO thin film transistor (TFT), and a ZnO thin film structure and a ZnO thin film transistor. The method of fabricating a ZnO thin film structure may include forming a ZnO thin film on a substrate in an oxygen atmosphere, forming oxygen diffusion layers of a metal having an affinity for oxygen on the ZnO thin film and heating the ZnO thin film and the oxygen diffusion layers to diffuse oxygen of the ZnO thin film into the oxygen diffusion layers.

A solid amorphous electrolyte composition for a thin-film battery. The electrolyte composition includes a lithium phosphorus oxynitride material containing a sulfide ion dopant wherein the atomic ratio of sulfide ion to phosphorus ion (S/P) in the electrolyte ranges greater than 0 up to about 0.2. The composition is represented by the formula: where 2x+3y+2z=5+w, x ranges from about 3.2 to about 3.8, y ranges from about 0.13 to about 0.46, z ranges from greater than zero up to about 0.2, and w ranges from about 2.9 to about 3.3. Thin-film batteries containing the sulfide doped lithium oxynitride electrolyte are capable of delivering more power and energy than thin-film batteries containing electrolytes without sulfide doping.

The present invention provides a method for manufacturing a thin film transistor substrate including forming gate wires on an insulation substrate, forming oxide active layer patterns on the gate wires, forming data wires on the oxide active layer patterns so that the data wires cross the gate wires, forming a passivation film on the oxide active layer patterns and the data wires using a non-reductive reaction gas and SiH₄, and forming pixel electrodes on the passivation film

A transparent conductive laminated body comprising a transparent dielectric substance thin film having two layers and furthermore a transparent conductive thin film being formed on one face of a transparent film substrate with thickness of 2 to 120 mum, and a transparent substrate being adhered on another face of the film substrate through a transparent pressure sensitive adhesive layer, wherein a relationship of n3<n1<=n2 <n4 is satisfied where a light index of refraction of the film substrate is defined as n1, a light indexes of refraction of the two layers of the dielectric substance thin films are defined as n2 and n3 from the film substrate side respectively, and a light index of refraction of the conductive thin film is defined as n4 is excellent in transparency and scratch-proof property of the conductive thin film, and, moreover, excellent also in flexibility. A touch panel using the transparent conductive laminated body concerned has an improved dotting property.

In a film or panel having excellent near-infrared absorbability and excellent near-infrared shieldability, and having a high degree of visible ray transmittance and good color tone, in order to produce the near-infrared-absorbing film or panel having good color tone while the near-infrared-absorbing dye disposed therein is kept stable, the dye and the binder resin for the dye are specifically selected, and the production method is also specifically selected. In addition, for the purpose of producing the film or panel while the dye disposed therein is kept stable and for the purpose of making the film or panel have additional functions such as electromagnetic radiation absorbability, the film or panel is made to have a multi-layered structure.

In one embodiment, the invention provides a MEMS device. The MEMS device comprises a plurality of functional components including at least one moveable component; and a sacrificial component to at least reduce movement of the moveable component during shipping of the microelectromechanical systems device, wherein the sacrificial component can be removed after shipping.

An optical instrument including: a thermo-optically tunable, thin film, free-space interference filter having a tunable passband which functions as a wavelength selector, the filter including a sequence of alternating layers of amorphous silicon and a dielectric material deposited one on top of the other and forming a Fabry-Perot cavity structure having: a first multi-layer thin film interference structure forming a first mirror; a thin-film spacer layer deposited on top of the first multi-layer interference structure, the thin-film spacer layer made of amorphous silicon; and a second multi-layer thin film interference structure deposited on top of the thin-film spacer layer and forming a second mirror; a lens for coupling an optical beam into the filter; an optical detector for receiving the optical beam after the optical beam has interacted with the interference filter; and circuitry for heating the thermo-optically tunable interference filter to control a location of the passband.

The present invention relates to a process for producing an opaque, transparent or translucent transaction card having multiple features, such as a holographic foil, integrated circuit chip, silver magnetic stripe with text on the magnetic stripe, opacity gradient, an invisible optically recognizable compound, a translucent signature field such that the signature on back of the card is visible from the front of the card and an active thru date on the front of the card. The invisible optically recognizable compound is an infrared ink and/or film, which can be detected by a sensor found in an ATM or card assembly line.

A hard coat film includes a transparent plastic film substrate; and a hard coat layer, wherein the hard coat layer is formed of a composition for forming a hard coat layer, the composition containing the following component (A), component (B), and an organic solvent:

Component (A): a polyrotaxane,

Component (B): a monomer having two or more ethylenically unsaturated groups.

The present invention relates to compositions for functional films, and more particularly to compositions for functional films such as a heat ray screening film compatible with hydrolic or alcoholic and anti-hydrolic resin binder, a near infrared screening film, a chrominance correcting film, a conductive film, a magnetic film, a ferromagnetic film, a dielectric film, a ferroelectric film, an electrochromic film, an electroluminescence film, an insulating film, a reflecting film, a reflection preventing film, a catalyst film, a photocatalyst film, a light selectively absorbing film, a hard film, and a heat resisting film, films formed therefrom, and a method of forming the compositions and the films.