The invention discloses a high-length-
diameter-ratio heterogeneous
electron carrier sheet stack structure and a manufacturing method thereof, and relates to the technical field of substrate manufacturing. Comprising an upper plate, the lowest layer of which is provided with a
metal conductive column; a through first through hole is formed in the lower plate; the
dielectric layer is provided with a pre-drilling hole; wherein the
line width, the line distance, the line thickness and the
welding pad thickness of the upper plate are smaller than the
line width, the line distance, the line thickness and the
welding pad thickness of the lower plate; the layer number of the upper plate is greater than that of the lower plate; the
diameter of the
metal conductive column is smaller than that of the first through hole, and the
diameter of the first through hole is smaller than that of the pre-drilled hole; a hole is formed in the
dielectric layer on the lower layer of the lower plate, and the hole exposes the end face of the
metal conductive column and then forms a
blind hole; through the
size matching of the metal conductive columns, the through holes and the pre-drilled holes and the structural design of the blind holes, collaborative optimization of high-density
interconnection and
structural stability is achieved, and the method has the advantages that the depth-to-
width ratio is increased, the
structural stability is enhanced, the thermal
management efficiency is optimized, and interface defects are reduced.