3132 results about "Etching" patented technology

The invention discloses a modified graphite felt electrode for an all-vanadium redox flow battery and a preparation method of the modified graphite felt electrode, and belongs to the technical field of redox flow battery electrode materials. The preparation method comprises the following steps: graphite felt electrochemical oxidation etching treatment; self-assembling a conductive layer on the oxidized and etched graphite felt to obtain the graphite felt attached with the conductive layer; and loading a metal and nitrogen-doped carbon (M and NC) nano catalyst layer on the graphite felt attached with the conductive layer to obtain the modified graphite felt electrode. Various properties of the graphite felt are comprehensively improved through matrix treatment, structure change and load catalysis, mild electrochemical oxidation etching is adopted, a carbon fiber structure is protected, a self-assembled net-shaped conductive layer forms a stable conductive channel, the specific surface area is remarkably increased, a nitrogen-doped carbon shell is adopted to wrap metal nanodots to form an M-NC catalytic layer, and the specific surface area is remarkably increased. The catalyst layer is not easy to dissolve out, the capacity fading rate is obviously improved, the loading capacity of the catalyst layer on the reticular structure conducting layer with a larger specific surface area is larger, and meanwhile, the process is simple and low in cost.

The invention relates to a simplified gas delivery system for atomic layer etching. According to the system, the overall cost is reduced by omitting the requirements of a gas tank and a pressure gauge. A preset mass flow controller (MFC) and a three-way valve can accurately control the gas flow in the surface modification step and the sputtering step of the ALE process. By means of the self-limiting property of the ALE process, the system does not need to maintain the steady-state pressure of the chamber, and the efficiency can be improved only by controlling the volume of the conveyed gas.

The invention provides a manufacturing and processing photoetching method and system of a display panel, and relates to the technical field of photoetching processing. According to the method, the display panel substrate is subjected to cleaning, prime coating and partition division to form an imageable micro-mark covering all exposure partitions, and the thickness and the uniformity are measured after lower-layer supporting glue and upper-layer imaging glue are sequentially formed; carrying out in-situ acquisition and modeling by taking the micro-mark as an imaging object, and generating an exposure correction instruction and an overlapping energy table; performing partition exposure and real-time correction by using a digital micromirror, and completing development to obtain an anti-etching window with a steep side wall; and setting an etching window according to the exposure record and the window quality data, and executing low-damage etching and defect recovery to form stability evaluation data. According to the method, comprehensive improvement of high-precision exposure, pattern consistency and electrical stability is realized.

A manufacturing method of a semiconductor structure and the semiconductor structure, the manufacturing method of the semiconductor structure comprising: providing a substrate comprising a first region and a second region; forming a laminated structure formed by alternately stacking a plurality of first material layers and a plurality of second material layers on the first region; first etching is executed, a groove is formed in one end of the laminated structure, and the second area is exposed out of the bottom of the groove; executing second etching, removing part of the plurality of second material layers through the grooves and keeping the plurality of first material layers arranged at intervals; wherein before the second etching is executed, a protection layer is formed on the surface of the second area, and the protection layer at least extends towards the surface of the first area. According to the method, the semiconductor device with relatively high reliability can be obtained.

The invention relates to a rapid gas delivery system and method for atomic layer etching. The system utilizes a compact gas buffer disposed near the gas distribution unit, enabling faster and more efficient delivery of gas to the chamber. The controller manages the gas flow of the gas buffer to maintain an amount of gas within the gas buffer required to perform a single ALE cycle. When one gas buffer delivers gas to the chamber for a partial ALE step, gas is concurrently delivered to the other gas buffer. The configuration not only can improve the efficiency, but also can save components such as a pressure gauge, thereby saving the cost.

The invention provides a bent waveguide structure, an electro-optical modulator and a light quantum computer, and relates to the technical field of electro-optical modulation.The bent waveguide structure comprises an input waveguide, a bent waveguide and an output waveguide which are sequentially connected, and the bent waveguide comprises a substrate transmission waveguide layer, an input coupling part and an output coupling part; the input coupling part and the output coupling part are arranged at the two ends of the substrate transmission waveguide layer respectively, a shallow etching groove is formed between the input coupling part and the output coupling part, the input coupling part is connected with the input waveguide, and the output coupling part is connected with the output waveguide. Compared with the prior art, the shallow etching groove is formed between the input coupling part and the output coupling part, so that the thickness of the waveguide film at the bending part is reduced to ensure that the substrate transmission waveguide layer is of a single-mode structure, the transmission loss is reduced, and the bending waveguide is relatively independent from the input waveguide and the output waveguide, so that the transmission efficiency is improved. Therefore, the process precision of the bent waveguide can be independently adjusted, the process time is reduced, and the efficiency is improved.

The embodiment of the invention provides a chip carrier plate and a manufacturing method thereof, a chip packaging structure, and a manufacturing method of the chip carrier plate, and the method comprises the steps: forming a first protection layer on a first surface of a glass substrate, forming a plurality of first through holes in the first protection layer, carrying out the laser induction of the glass substrate through the first through holes, and forming a plurality of induction regions, and in the induction area, etching the glass substrate to form a plurality of second through holes penetrating through the glass substrate, and forming conductive connection parts in the second through holes. The first protection layer with the first through hole is manufactured on one side of the glass substrate, the first protection layer exposes the area, needing laser induction, on the glass substrate, the area, not needing laser induction, on the glass substrate is protected, and it is avoided that when the glass substrate is etched subsequently, etching damage is caused to other positions of the surface of the glass substrate. Therefore, the thickness of the glass substrate can be ensured, and the surface quality such as roughness of the surface of the glass substrate can be ensured.

The embodiment of the invention provides a solar cell slice, a preparation method of the solar cell slice and a photovoltaic module, and the preparation method comprises the steps: providing a solar cell initial structure, and carrying out the thinning of a preset region of the solar cell initial structure through a first laser according to a first cutting width; the PN junction in the preset area is removed through a wet etching process, an isolation groove with a tower footing structure is obtained in the front face of the solar cell initial structure, the isolation groove penetrates through the crystalline silicon substrate in the first direction, and meanwhile the tower footing structure is formed on the back face of the solar cell initial structure; respectively forming a functional film layer and an electrode on the back surface and the front surface of the solar cell initial structure; according to the invention, the second laser is used for cutting the isolation groove according to the second cutting width to obtain the solar cell slice with the step-shaped edge, and the solar cell slice does not need to be subjected to independent section passivation treatment, so that the technological process is simplified, and the production yield is also improved.

The invention discloses a reinforced composite PCB and a preparation method thereof, and belongs to the technical field of PCB preparation. The preparation method of the reinforced composite PCB comprises the following steps: step 1, processing an inner-layer core board to obtain a preprocessed inner-layer core board; 2, cutting, drilling and activating the modified composite film to obtain a treated modified composite film; and 3, sequentially carrying out stacking, hot pressing treatment, pressure relief, cooling, drilling, hole metallization treatment, outer layer pattern transfer, pattern electroplating, outer layer etching, resistance welding, surface treatment, molding and testing on a copper foil, a prepreg, the pretreated inner layer core plate, the prepreg, the treated modified composite film, the prepreg, the pretreated inner layer core plate, the prepreg and the copper foil. And the composite PCB is obtained. The circuit board prepared by the method has excellent thermal stability and mechanical properties.

The invention belongs to the technical field of photovoltaic wet etching, and particularly relates to a low-concentration hydrofluoric acid composite etching solution and a preparation method and an etching process thereof, and the low-concentration hydrofluoric acid composite etching solution comprises the following components in percentage by mass: 5%-10% of hydrofluoric acid, 2%-5% of an etching additive and the balance of water; wherein the etching additive comprises the following components in percentage by mass: 8%-25% of a strong oxidant, 2%-5% of an etching accelerant, 0.5%-2% of an interface modification and mass transfer accelerant, 0.1%-3% of a product control and stabilizer, 0.1%-2% of an equipment compatible corrosion inhibitor and the balance of water; the strong oxidant is used for oxidizing silicon nitride to form a silicon oxynitride transition layer, the etching accelerant is used for providing HF molecules and HF2-ions, and the product control and stabilizing agent is used for complexing SiF62-ions generated by etching.

The invention provides a well drilling anti-interference communication system based on a VCSEL (Vertical Cavity Surface Emitting Laser), the VCSEL and a manufacturing method thereof, and the manufacturing method comprises the following steps: calculating the light field intensity distribution of a high-order transverse mode through an intrinsic mode expansion method and a Laguerre-Gaussian model based on the epitaxial structure parameters of a laser; determining a target area which begins to perform downward annular etching on the surface of the p-DBR layer, wherein the target area coincides with a light field intensity peak area of the high-order transverse mode; performing annular etching in the target area to form an annular groove, and etching at least seven pairs of p-DBR layers inwards in the groove; the communication system comprises a signal transmitting end arranged on the derrick side, and the signal transmitting end is provided with the vertical cavity surface emitting laser; the p-DBR region of the vertical cavity surface emitting laser is provided with an annular etching structure; the graded-index fluorinated plastic optical fiber is used as a transmission medium and is connected with the derrick side and the logging room side; and the optical signal receiving end is arranged at the logging room side and is used for receiving and converting the optical signal into an electric signal.

The invention relates to the technical field of air electrode preparation, in particular to a metal-loaded super-hydrophobic air electrode, a preparation method and chlorine production application, the air electrode comprises a high-hydrophobicity gas diffusion layer obtained through polytetrafluoroethylene modification, and the metal-loaded super-hydrophobic air electrode is prepared through a corona etching and electrochemical in-situ deposition technology. A uniform and highly-dispersed metal catalyst layer directly grows on the surface of the polytetrafluoroethylene substrate, so that the gas diffusion electrode with excellent mass transfer performance and an efficient catalytic function is obtained; the prepared electrode is used for carrying out electrochemical catalysis on a water body containing chloride ions by adopting a cyclic voltammetry method, and active chlorine can be efficiently generated in situ; the prepared metal-loaded super-hydrophobic air electrode has the advantages of being low in oxygen mass transfer resistance, high in catalyst utilization rate, free of generation of by-products, capable of efficiently generating active chlorine and the like, and has wide application potential in actual water environment disinfection.

The present disclosure provides a new wet atomic layer etch (ALE) process for etching high-k dielectric materials. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching transition metal oxide dielectric materials in a cyclic wet ALE process. In the example embodiments provided herein, new etch chemistries and methods are provided for etching zirconium dioxide (ZrO2), hafnium dioxide (HfO2) and HfxZr(1-x)O2 dielectrics in a cyclic wet ALE process. However, the wet ALE techniques described herein are not strictly limited to the example materials discussed herein and can be applied to other transition metals and transition metal oxides.

The invention provides a shield gate trench MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) structure and a manufacturing method thereof, according to the manufacturing method, a field oxide layer is formed twice (a first oxide layer and a second oxide layer), a polycrystalline silicon interlayer is introduced between the first oxide layer and the second oxide layer, and the polycrystalline silicon interlayer is only reserved on a side wall opposite to a non-floating shield gate layer after being etched twice, so that the field oxide layer is formed in the first oxide layer and the second oxide layer; and a floating shield grid layer is formed. As the floating shield grid layer is introduced to the side wall opposite to the non-floating shield grid layer, the field intensity of the middle area in the depth direction of the groove can be increased, and the overall voltage endurance capability is improved. The floating shield gate layer is introduced into the shield gate trench MOSFET structure, so that the voltage withstanding level of a device can be improved, and the voltage withstanding level of the device can be improved by utilizing a capacitive coupling effect between a part of the floating shield gate layer and a part of the floating shield gate layer and a capacitive coupling effect between a source electrode and the drain electrode. Therefore, gate-drain capacitance and source-drain capacitance of the device can be reduced, and switching speed of the device is improved.

The invention discloses a copper surface micro-etching coarsening solution for a fine circuit as well as a preparation method and application of the copper surface micro-etching coarsening solution, and relates to the technical field of printed circuit board manufacturing. The copper surface micro-etching coarsening solution for the fine circuit is prepared from, by mass concentration, 60 g / L to 100 g / L of sulfuric acid, 40 g / L to 60 g / L of hydrogen peroxide, 0.5 g / L to 2 g / L of zinc sulfate, 10 g / L to 30 g / L of copper ions, 0.5 g / L to 1 g / L of pyridine heterocycle-containing Schiff base, 10 g / L to 100 g / L of ethyl alcohol, 1 g / L to 3 g / L of 2-mercaptobenzothiazole, 1 g / L to 5 g / L of methionine and 1 g / L to 5 g / L of polyacrylamide. According to the copper surface micro-etching coarsening solution, the 2-mercaptobenzothiazole and the methionine in the copper surface micro-etching coarsening solution can enable the copper surface to form a honeycomb structure under the low micro-etching amount, the zinc sulfate and the pyridine heterocyclic ring-containing Schiff base can form a composite film layer with copper ions on the surface of the honeycomb structure, and the interlayer binding force is improved.

The invention provides a step-by-step etching method for extracting an extremely trace amount of solar wind 10Be from a moon sample. Comprising the following steps: 1, screening samples; step 2, etching; step 3, element content analysis; step 4, performing complete digestion; step 5, fluorine removal; step 6, ion exchange; step 7, preparing Be (OH) 2; and step 8, preparing a BeO target sample. According to the method, the etching step length is accurately regulated and controlled by monitoring the element contents of different etching layers, so that fine etching is realized; compared with an existing full dissolution technology, the method is a brand-new step-by-step etching method, and by combining an ion exchange method, layer-by-layer etching of the moon and other extraterrestrial samples and extraction of 10Be in the moon and other extraterrestrial samples are achieved; according to the method, the solar wind injection rate can be determined, and the solar wind injection resource generation rate of the moon and other extraterrestrial celestial bodies can be estimated.

The invention relates to an electrolytic copper foil anode plate electrode and a preparation process thereof, and belongs to the technical field of electrolytic copper foil production. The electrolytic copper foil anode plate electrode sequentially comprises a titanium substrate, an Ir-Ta oxide transition layer and an IrO2-RuO2-SnO2 oxide composite coating from inside to outside. The preparation process comprises the following steps: firstly, forming a micron-sized rough surface by utilizing acetone and ethanol ultrasonic cleaning and oxalic acid etching; the transition layer is subjected to sol dispersion and sintering treatment through polyethylene glycol, so that the balance of low porosity and high bonding strength is realized; the composite coating adopts an acetylacetone-ethylene glycol monomethyl ether solvent system, and a nanocrystalline structure is formed through step-by-step sintering; and an Ir-rich passivation layer is generated through electrochemical activation, and the finally obtained anode plate electrode has more excellent electrochemical activity and longer service life.

The invention relates to the technical field of optical waveguide master mask manufacturing processes, and discloses a monitoring and correcting method and system for an optical waveguide master mask etching process, and the method comprises the steps: setting a plurality of monitoring regions and corresponding monitoring point positions, and collecting the real-time monitoring data of each monitoring point position; inputting real-time monitoring data into the etching analysis model to obtain a real-time etching coefficient of each monitoring point; judging whether correction is needed or not according to the real-time corrosion coefficient, and if yes, determining a plurality of local defect areas and generating a correction instruction; a correction instruction is issued, a feedback time node is set, a correction data packet of each local defect area is collected according to the feedback time node, a correction evaluation value is generated, whether the local defect area is corrected again or not is judged according to the correction evaluation value, and real-time monitoring and accurate correction of the etching process are effectively achieved. The problems that in a traditional etching process, defects are known after being perceived due to lack of real-time monitoring, and resources are wasted due to global reworking are solved.

The invention relates to the technical field of etching liquid, in particular to a copper metal etching liquid composition. Comprising the following components in percentage by weight: 5-10% of hydrogen peroxide, 0.1-0.3% of a first fluorine source, 1-5% of first inorganic acid, 1-5% of alkali, 0.01-0.8% of a first metal corrosion inhibitor and the balance of deionized water; and the auxiliary agent comprises 2-8% of a second fluorine source, 10-55% of second inorganic acid, 0.1-2% of a second metal corrosion inhibitor and the balance of deionized water. The etching liquid is excellent in etching effect, CD-loss reaches 0.6-0.8 [mu] m, the slope angle reaches 40-50 degrees, the highest copper load reaches 20000 ppm, and meanwhile the problem that when copper is high, due to the fact that the nitric acid concentration is too high, metal etching is abnormal is solved.

The invention relates to an atomic layer etching system and method for autonomously generating a process formula. The system is provided with a system digital twinning capable of autonomously generating process formula parameters and subsystem control parameters. The system based on digital twin drive can support accurate simulation, thereby realizing efficient and highly adaptive semiconductor processing. In some embodiments, a system controller may utilize system digital twinning to generate a process recipe based on an optimization program of a predefined cost function. A novel approach is presented herein that provides an initial estimate by utilizing a large number of simulation application cases accumulated for a long term in the background. The concept of the invention can be widely applied to any type of etching and deposition process system using the vacuum plasma chamber.

The invention provides a triaxial accelerometer based on a four-degree-of-freedom weak coupling resonator, the triaxial accelerometer comprises an upper-layer structure and a lower-layer structure, the upper layer is a micromechanical sensitive element constructed by taking silicon as a material, the lower layer is a glass base processed by a silicon dioxide material, and the glass base is used for providing mechanical support and electrical isolation functions. Wherein the micromechanical sensitive element has a signal conversion function; and the lower-layer glass base is formed by wet etching and metal sputtering processes and is used for signal output. On the basis of collaborative design of the orthogonally distributed resonance unit array and the mechanical amplification mechanism, electrostatic driving and amplitude ratio detection are combined, synchronous and accurate sensing of acceleration of the Y axis, the X axis and the Z axis is achieved through a single sensitive element, the technical limitation of a traditional single-axis detection mode is broken through, the complexity of a rear-end signal processing circuit is reduced, and the detection precision is improved. The device space utilization rate is improved.

The invention discloses a gallium oxide solar-blind ultraviolet detector based on selective area etching and a preparation method thereof, and belongs to the technical field of semiconductor photoelectric detection. Comprises from bottom to top: a substrate; the first epitaxial layer is located on the substrate, and the first epitaxial layer is a highly doped n-Ga2O3 layer; the second epitaxial layer is located on the first epitaxial layer, and the second epitaxial layer is a lightly doped n-Ga2O3 layer; the third epitaxial layer is located on the second epitaxial layer, the third epitaxial layer is a highly-doped p-NiO layer, and the third epitaxial layer is distributed at intervals through selective area etching; and the first ohmic contact layer is located on the area where the third epitaxial layer is distributed at intervals. The detector adopts a PN junction structure working in a reverse bias state, and compared with a Schottky structure, the detector has the advantages that the built-in electric field intensity and the leakage current level of a device are less affected by high-energy photon irradiation and working environment temperature change, and the anti-irradiation performance of the device and the working capability under an extreme temperature condition are effectively improved.

Provided in the present disclosure are a semiconductor process chamber, a unilateral footing elimination method, and a semiconductor process apparatus. In the semiconductor process chamber, an edge gas intake assembly is circumferentially arranged on a side wall of a chamber body, and when a wafer is carried on a carrying device, a gas introduced by the edge gas intake assembly can cover an edge target area of the wafer, such that by changing the gas intake direction of the edge gas intake assembly, the gas is controlled to reach the edge target area of the wafer, which specifically mitigates the problem of insufficient unilateral etching of a core column at the edge of the wafer, thereby eliminating unilateral footing and improving the product quality of the semiconductor process apparatus.

The invention relates to the technical field of porous carbon materials, and discloses a preparation method of phenolic resin-based porous carbon based on synergistic activation of water vapor and carbon dioxide. The key point of the method is to construct a multi-dimensional process of'ZIF-8 (at) Ni-MOF derived bifunctional material pore forming-nitrogen / nickel co-doping + dynamic pressure-double-gas synergistic etching + Ti < 3 > C < 2 > T < x > MXene gradient modification '. The MOF derivative material provides regular initial pore channels and active sites, and precise customization of the pore diameter of 0.7-50 nm is realized by combining dual-gas characteristic complementation and dynamic pressure regulation and control; and MXene modification synchronously improves the conductivity and the interface bonding force. The micropore rate is greater than or equal to 88%, the specific surface area is greater than or equal to 2200m < 2 > / g, the total pore volume is greater than or equal to 1.3 cm < 3 > / g, and the process is free of chemical waste liquid pollution. When the material is applied to a lithium battery silicon-carbon negative electrode, the capacity retention rate after 500 cycles is greater than or equal to 85%, and the industrialization value is high.

Method for depositing tungsten in high-aspect-ratio (>50) structure includes: depositing a tungsten layer with first thickness on side wall and bottom of the recessed structure; introducing treatment gas to the substrate, the treatment gas includes free radical containing fluorine / chlorine and free radical containing one of carbon, sulfur, nitrogen, hydrogen or oxygen; and depositing tungsten layer with second thickness, so that at least part area of the recessed structure is filled with the tungsten. The free radicals in the treatment gas form surface bond on surface of the tungsten layer, so that subsequent deposition of the tungsten can be retarded, the etching with the free radical further prevents premature closing of a top opening of the recessed structure, seams in the recessed structure can be moved downward and narrowed, and can be prevented from being exposed during a subsequent CMP treatment process.

The invention discloses a carbon felt electrode for a zinc-bromine flow battery as well as a preparation method and application, and belongs to the technical field of zinc-bromine flow battery production, the method comprises the following steps: immersing a carbon felt into an acid solution for chemical etching, etching uniform grooves in the carbon fiber surface of the carbon felt, cleaning and drying to obtain a pretreated carbon felt; the preparation method comprises the following steps: dissolving tin salt and nickel salt in deionized water, and adding a hydrolysis inhibitor to obtain a precursor solution; and immersing the pretreated carbon felt into the precursor solution, carrying out electro-deposition under constant current by adopting a direct-current power supply by taking the re-selected untreated carbon felt as a counter electrode, washing the pretreated carbon felt subjected to electro-deposition with water, and drying for the second time to obtain the carbon felt electrode for the zinc-bromine flow battery. By utilizing the zinc affinity of Sn and Ni, zinc is preferentially deposited on Sn and Ni sites of the carbon felt electrode, the deposition depth is obviously enlarged, the zinc deposition space is optimized, the zinc deposition area capacity is effectively improved, and the problem that the surface capacity of the carbon felt electrode is limited is solved.

This invention relates to a method for synthesizing iron-cobalt alloy-doped carbon nanofibers for electrocatalysis using zinc oxide etching, belonging to the technical field of electrode materials and catalysts. The preparation method includes the following steps: 1) mixing DMF (dimethylformamide), PMDA (pyromellitic dianhydride), and ODA (4,4-diaminodiphenyl ether) in a certain proportion to prepare a PAA (polyamic acid) spinning solution; 2) preparing PAA nanofibers from the PAA spinning solution using an electrostatic melt-blowing device; 3) imidizing the PAA nanofibers using a programmed temperature rise method to obtain PI nanofibers; 4) impregnating the PI nanofibers in a salt solution; 5) carbonizing the impregnated PI nanofibers with a large number of metal ions on their surface in an inert atmosphere using a certain temperature rise program to obtain iron-cobalt alloy-doped carbon nanofibers. The iron-cobalt alloy-doped carbon nanofibers prepared by this method exhibit excellent performance as an ORR / OER bifunctional electrocatalyst and have wide applications.

The present application belongs to the field of diamond preparation, and discloses a high-quality single-crystal diamond preparation method for removing polycrystal defects. Through screen printing and plasma-assisted etching, the (100) surface around the black point-shaped polycrystal is directionally etched by cerium oxide, and a square groove is etched. Then, the slurry of iron oxide or nickel oxide is printed by screen printing, the black point-shaped polycrystal is covered with the slurry, and the black point-shaped polycrystal is removed by plasma-assisted etching. Then, the etched groove is filled by a horizontal growth process, so that the growth defects can be removed, and high-quality single-crystal diamond can be obtained. The present application can greatly reduce the waste rate of single-crystal diamond products and improve the utilization rate of single-crystal diamond. The present application is beneficial to saving production cost and improving efficiency.

The invention discloses weldable low-temperature sintered silver paste which is prepared by mixing 65-90 parts of micro-nano silver powder, 10-20 parts of metal salt additive, 1-5 parts of polymer additive, 15-19 parts of organic solvent and 1-5 parts of organic additive, the micro-nano silver powder is obtained by mixing nano silver powder with the particle size of 10-50nm and micron silver powder with the particle size of 1-10mu m, and a preparation method comprises the following steps: step 1, preparing a first-stage polymer carrier; the preparation method comprises the following steps: 1, preparing a first-stage polymer carrier, 2, preparing a second-stage polymer carrier, 3, pretreating micro-nano silver powder, and 4, preparing conductive silver paste. Through micro-nano silver powder grading, nano-particles are filled in gaps of micro-particles, the stacking density is improved, the sheet resistance is reduced, an oxidation film is formed on the surface of the passivated micro-nano silver powder, the interface bonding strength can be effectively improved, the sintering activation energy of silver is reduced by the metal salt additive, and by combining the'etching-remelting 'effect of the oxidation film on the surface of the silver powder, the bonding strength of the surface of the silver powder is improved. The sintering temperature is effectively reduced.

To suppress generation of residue when forming an open hole by performing metal assist chemical etching from both surfaces of a substrate.SOLUTION: A liquid discharge head manufacturing method includes: a first etching process in which a first metal film is formed on a first face which is one plate face of a semiconductor substrate, and a first hole is formed at a position of a first flow path by metal assist chemical etching using the first metal film; and a second etching process in which after the first etching process, a second metal film is formed on a second face which is a plate face opposite to the first face of the semiconductor substrate, and a second hole is formed at a position of a second flow path by metal assist chemical etching using the second metal film. A first region, in which the first metal film is provided, involves a second region in which the second metal film is provided when viewed in a thickness direction of the semiconductor substrate.SELECTED DRAWING: Figure 3