56 results about "Superluminescent diode" patented technology

The invention discloses a vector flow velocity measuring device and method based on a bidirectional scanning spectral domain optical coherence tomography technology. Comprising a super light-emitting diode light source, an optical fiber coupler, a polarization controller, an interferometer comprising a sample arm and a reference arm, and a collimating lens, the collimating lens, the grating, the focusing lens group and the linear array camera are sequentially connected through a light path; the linear array camera, the computer and the two-dimensional galvanometer are sequentially connected through a line; according to the method, the fixed bias vector velocity is introduced by utilizing the bidirectional scanning technology, the dynamic light scattering optical coherence tomography method and the Doppler optical coherence tomography method are combined, decoupling of each parameter of the vector flow velocity is efficiently and accurately realized, and a quantitative index is provided for vector flow velocity analysis. The vector flow velocity measuring device based on the bidirectional scanning spectral domain optical coherence tomography technology is simple in system setting and low in cost, the time resolution is improved by about 2.5 times, and the measuring time is shorter.

The invention provides in embodiments a light generating system (1000) comprising a first light generating device (100), a first luminescent material (210), and a second luminescent material (220), wherein: A) the first light generating device (110) is configured to generate first device light (111), wherein the first light generating device (110) comprises a first light source (10) selected from the group of a superluminescent diode and a laser; B) the first luminescent material (210) comprises a line absorber and line emitter luminescent material providing a first luminescent material emission (211) comprising a line emission at a first wavelength (λL,1) upon excitation with the first device light (111); C) the second luminescent material (220) comprises a broad band emitter luminescent material providing a second luminescent material emission (221) comprising a broad band emission upon excitation with the first device light (111), wherein the second luminescent material emission (221) has a second centroid wavelength (λLC,2), wherein |λL,1-λLC,2|≤20 nm; D) the first light generating device (110) is configured to pump one or more of the first luminescent material (210) and the second luminescent material (220) with the first device light (111); and E) the light generating system (1000) is configured to generate system light (1001) comprising one or more of the first luminescent material emission (211) and the second luminescent material emission (221).

The invention discloses an optical path active vibration isolation system used in an in-situ measurement environment and an automatic calibration method, and relates to the technical field of in-situ measurement. The optical path active vibration isolation system comprises a measurement interferometer and a reference interferometer. The measurement interferometer is illuminated by a white light source through a tunable filter, the tunable filter is used for filtering light emitted from the white light source and selecting a set wavelength, so that the camera generates an interferogram generated only by the set wavelength, and light with different wavelengths sequentially passes through the tunable filter, so that the camera captures a series of interferograms with different wavelengths; the absolute optical path difference is calculated in real time by analyzing the interferogram; the reference interferometer and the measurement interferometer share the same optical path, are illuminated by an infrared super light emitting diode, and are used for observing and compensating environmental noise. According to the invention, the problem of noise interference measurement in application scenes such as large-scale manufacturing workshops is solved.

The invention provides a light generating system (1000) comprising (i) a plurality of light sources (110,120, . . .), (ii) a first luminescent material (210), and (iii) a second luminescent material (220), wherein: (a) a first light source (110) is configured to generate first light source light (111) having one or more wavelengths in the blue wavelength range and having a first centroid wavelength (λC1), wherein the first light source (110) is a laser; (b) the first luminescent material (210) is configured to convert at least part of the first light source light (111) into first luminescent material light (211) having one or more wavelengths in the green and / or yellow wavelength range; (c) a second light source (120) is configured to generate second light source light (121) having one or more wavelengths in the yellow and / or orange wavelength range and having a second centroid wavelength (λC2), wherein λC2>λC1; wherein the second light source (120) is a superluminescent diode; (d) the second luminescent material (220) is configured to convert at least part of the second light source light (121) into second luminescent material light (221) having one or more wavelengths in the orange and / or red wavelength range; and (e) in an operational mode the light generating system (1000) is configured to generate system light (1001) comprising the first luminescent material light (211) and the second luminescent material light (221).

The invention discloses a colloidal quantum dot-based broadband super-radiation light-emitting diode and a preparation method thereof, belongs to the technical field of semiconductor devices, and solves the technical problem that the improvement of optical gain is limited due to insufficient spectrum regulation and control precision of colloidal quantum dots in the application of a super-radiation light-emitting diode in the prior art. The diode comprises a distributed Bragg reflector and a bar structure, wherein the bar structure is composed of an ITO cathode, an electron transport layer, a CQD active layer, a hole transport layer, a spacer layer, a current focusing structure layer, a hole injection layer and an Ag anode which are sequentially arranged from bottom to top and composed of the ITO cathode, the electron transport layer, the CQD active layer, the hole transport layer, the spacer layer and the current focusing structure layer; the distributed Bragg reflector is of a transverse Bragg reflection waveguide structure, and the structure comprises a plurality of pairs of alternating layers; the CQD active layer is filled with core-shell colloidal quantum dots; the spacing layer and the current focusing structure layer are of slit structures; and the Ag anode and the distributed Bragg reflector form a transverse cavity structure along the plane direction. The super-radiation light-emitting diode is suitable for the technical fields of broadband optical coherence tomography, gyroscope optical fiber sensing and the like.

The application discloses a quantum random number generator based on feedback adjustment of a comparator threshold value and a random sequence generation method. The quantum random number generator comprises a superluminescent diode, a filter, an erbium-doped fiber amplifier, a fiber coupler with a coupling ratio of 50:50, an optical delay line, a first beam splitter and a second beam splitter with the same splitting ratio, a first optical power meter and a first photodetector connected with the first beam splitter, a second optical power meter and a second photodetector connected with the second beam splitter, a microcontroller connected with the first optical power meter and the second optical power meter, and a comparator connected with the microcontroller, the first photodetector and the second photodetector. The first photodetector and the second photodetector are connected with the comparator through a differential circuit. The application adjusts the threshold voltage to offset the influence of the output characteristics of a light source on the output random number.

The invention belongs to the technical field of optical measurement, and relates to an MEMS fatigue evolution law observation device based on off-axis digital holographic microscopy, which comprises a red light super-radiation light-emitting diode light source, a wire grid type beam splitter, an objective lens and a CCD, and is characterized in that a linear polarizer, a half-wave plate and the wire grid type beam splitter are fixedly arranged on a light path emitted by a red light super-radiation light-emitting diode; a half-wave plate, a beam expanding lens group, a plano-convex lens, a beam splitter prism, an objective lens and a sample table are fixedly arranged on an object light path in sequence, a reflector is arranged on a vertical light path, and an optical delay line, the beam expanding lens group and the plano-convex lens are fixedly arranged on a reference light path; after the reference light passes through the reflector and the beam splitter prism, the reference light interferes with the object light reflected by the beam splitter prism on the CCD and is observed. According to the invention, the hologram of the MEMS device under high-frequency vibration can be acquired, and the surface topography of the MEMS device is obtained through computer rapid phase unwrapping, so that the purpose of observing fatigue evolution of the MEMS structure in real time is achieved.

The present invention relates to the field of superluminescent diode manufacturing, and discloses a coaxial superluminescent diode automatic coupling stage equipped with a spectral analyzer, including a coaxial SLD automatic coupling stage cabinet. At the bottom end inside the coaxial SLD automatic coupling stage cabinet, there is an automatic coupling stage main unit. On both sides above the automatic coupling stage main unit, an optical power meter and a spectral analyzer are installed. In this invention, when the spectral data is unqualified, the drive current is automatically increased in a set step size, but does not exceed the maximum operating current of the set die, until both are qualified and enter the sealing and soldering process. When increasing the drive current and the output power exceeds the maximum upper limit, the coupling efficiency needs to be automatically reduced until both are qualified and enter the sealing and soldering process. After the coaxial SLD automatic coupling stage is equipped with a spectral analyzer, it realizes synchronous testing and synchronous screening of the output optical power and spectral characteristics, improves production efficiency, and executes a compensation program according to the spectral data to improve the product qualification rate.

The invention provides a light generating system (1000) comprising (i) one or more light generating devices (100), (ii) a luminescence conversion arrangement (2000), and (iii) a diffuser arrangement (4000), where the one or more light generating devices (100) are configured to generate device light (101); wherein the one or more light generating devices (100) comprise a solid state light source (10), wherein the solid state light source (10) comprises one or more of a laser diode and a super light emitting diode; wherein the light generating system (1000) is configured such that, in an operating mode of the light generating system (1000), (a) at least a portion of the device light (101) propagates to the luminescence conversion arrangement (2000), and (b) at least a portion of the device light (101) propagates to the diffuser arrangement (4000); wherein at least a portion of the device light (101) propagating to the diffuser arrangement (4000) is polarized light comprising one of a first linear polarization and a second linear polarization; the luminescent conversion arrangement (2000) comprises a luminescent material (200) configured to convert at least a portion of the device light (101) received by the luminescent material (200) into luminescent material light (201); wherein the luminescent material (200) is configured in a reflective mode with respect to the device light (101) illuminating the luminescent material (200); the diffuser arrangement (4000) is configured to generate diffused device light (401) from at least a portion of the device light (101) received by the diffuser arrangement (4000); wherein the diffuser arrangement (4000) comprises a polarization beam splitter (410), a quarter wave plate (420), a polarization maintaining diffuser (430) and a specular mirror (440), wherein the mirror (440) comprises a metal mirror (440); a polarizing beam splitter (410) (i) having transmissivity for one of the light having the first linear polarization and the light having the second linear polarization, and (ii) having reflectivity for the other of the light having the first polarization and the light having the second linear polarization; and the light generating system (1000) is configured to generate system light (1001), the system light (1001) comprising (i) diffused device light (401) and (ii) luminescent material light (201) in an operating mode of the light generating system (1000).

The present invention provides a light-generation system (1000) including a first light-generation device (110), a luminescent body (1200), a thermally conductive element (500), and an axicon-like optical element (400), wherein: (A) the first light-generation device (110) is configured to generate first device light (111), the first light-generation device (110) including one or more of a superluminescent diode and a solid-state laser; (B) the luminescent body ( (1200) includes a luminescent material (200) configured to convert at least a portion of the first device light (111) into luminescent material light (201), the luminescent body (1200) having an annular shape; and (C) a thermally conductive element (500) configured (a) to be in thermal contact with at least a portion of the luminescent body (1200), and (b) to convert at least one of the first device light (111) and the luminescent material light (201). (D) the axicon-like optical element (400) comprises a first portion (410) and a second portion (420) and has an optical element length (L), the first portion (410) having a conical shape, a first length (L1) and comprising a first end window (411), the second portion (420) having a cylindrical shape, a second length (L2) and comprising a second end window (422), where 0.7≦L2 / L<1; (E) the axicon-like optical element (400) comprises: (a) a first portion (410) and a second portion (420) and having an optical element length (L), the first portion (410) having a conical shape, a first length (L1) and comprising a first end window (411), the second portion (420) having a cylindrical shape, a second length (L2) and comprising a second end window (422), where 0.7≦L2 / L<1; A light generating system is provided that is configured to (a) receive at least a portion of a first device light (111) via a portion (410) and provide an annular beam of the first device light (111) to a luminescent body (1200) via a second portion (420), and (b) collect at least a portion of a luminescent material light (201) via the second portion (420) and provide a beam of luminescent material light (201) via the first portion (410).

The utility model discloses a super-radiation light-emitting diode light source driving circuit, and relates to the technical field of inertial navigation optical fiber gyroscope light source driving. The positive control end and the negative control end of the TEC temperature control module are respectively connected with the cold end and the hot end of the super-radiation light-emitting diode light source and are used for controlling the temperature of the super-radiation light-emitting diode light source to be within a set range, and the constant power module mainly provides stable and constant driving current for the super-radiation light-emitting diode light source; according to the utility model, stable and constant driving current can be provided for the super-radiation light-emitting diode light source, the super-radiation light-emitting diode light source TEC module can be controlled to carry out temperature compensation, and the optical power change caused by temperature change is reduced, so that the precision index of the optical fiber gyroscope is improved, the circuit structure is simple, the miniaturization design can be realized, and the cost is low. And the size and the weight of the optical fiber gyroscope are reduced.

The invention may provide a light generating system (1000) comprising (i) one or more light generating devices (100), (ii) a first luminescent material (210), (iii) a reflector (2510), (iv) a rotatable element (1200), and (v) a control system (300); wherein the one or more light generating devices (100) are configured to generate device light (101); wherein the one or more light generating devices (100) comprise one or more of a laser diode and a super light emitting diode; the first luminescent material (210) is configured to convert at least a portion of the device light (101) received by the first luminescent material (210) into first luminescent material light (211); the reflector (2510) is configured to reflect at least a portion of the device light (101) received by the reflector (2510) as reflected device light (711); the rotatable element (1200) comprises a first annular section (2131) and a second annular section (2132); the first luminescent material (210) is comprised by at least a portion of the first annular section (2131); and the reflector (2510) is comprised by at least a portion of the second annular section (2132); the light generating system (1000) is configured such that: (a) in an operating mode of the light generating system (1000), the rotatable element (1200) rotates such that different portions of the first annular section (2131) and / or different portions of the second annular section (2132) are illuminated by the device light (101) over time, and (b) the distribution of the device light (101) over the first annular section (2131) and the second annular section (2132) is optically and / or mechanically controllable; and wherein the light generating system (1000) is configured to generate system light (1001), the system light (1001) comprising one or more of first luminescent material light (211) and reflected device light (711); and the control system (300) is configured to control the spectral power distribution of the system light (1001) by optically and / or mechanically controlling the distribution of the device light (101) over the first annular section (2131) and the second annular section (2132).

The invention provides a light generating system (1000) comprising a first light generating arrangement (2100), a luminescent body (210), a reflective polarizer (500), and a control system (300); wherein the first light generating arrangement (2100) is configured to generate pump light (2101) having a controllable polarization, wherein the polarization is controllable between a first polarization and a second polarization; wherein the first light generating arrangement (2100) comprises a first solid state light source (10) selected from the group comprising a superluminescent diode and a laser diode; wherein the luminescent body (210) comprises a luminescent material (200); wherein the luminescent body (210) is configured to (a) transmit at least part of the pump light (2101) (comprising the first polarization and / or the second polarization) and (b) convert at least part of the pump light (2101) (comprising the first polarization and / or the second polarization) into luminescent material light (201); wherein the reflective polarizer (500) is configured downstream of the luminescent body (210); wherein the reflective polarizer (500) is transmissive for at least part of the luminescent material light (201); wherein the reflective polarizer (500) has a higher transmission for the pump light (2101) comprising the first polarization than for the pump light (2101) comprising the second polarization, wherein the reflective polarizer (500) has a lower reflectivity for the pump light (2101) comprising the first polarization than for the pump light (2101) comprising the second polarization; wherein the light generating system (1000) is configured to generate system light (1001); and wherein the control system (300) is configured to control spectral properties of the system light (1001) by controlling the polarization of the pump light (2101).

The invention provides a dual-wavelength super-radiation light-emitting diode and a preparation method thereof, and the dual-wavelength super-radiation light-emitting diode comprises a substrate, a first semiconductor cladding, a first light limiting layer, a quantum well active layer, a second light limiting layer and a second semiconductor cladding which are stacked. A ridge waveguide structure is arranged on the surface of one side, far away from the second light limiting layer, of the second semiconductor cladding; wherein the quantum well active layer comprises a first light-emitting layer and a second light-emitting layer, the second light-emitting layer and the first light-emitting layer are arranged on the same layer and adjacent to each other, the first light-emitting layer can emit first light with the wavelength being lambda 1, the second light-emitting layer can emit second light with the wavelength being lambda 2, and lambda 1 is smaller than lambda 2; the ridge waveguide structure is used for guiding the first light and the second light and converging the first light and the second light on the same light-emitting surface for emission. According to the invention, the spectral bandwidth limitation of a single-wavelength device can be obviously broken through, and the requirements of optical fiber sensing, coherent imaging and the like on a wide-spectrum light source can be met; meanwhile, the total output power is improved on the premise that the size of the device is not increased.

The application discloses a multi-period DBR super-radiation light-emitting diode structure with an ultra-wide spectrum width, wherein the upper surface of a P face electrode is divided into four areas, which are a light-emitting end ridge, an active multi-mode interference device, a plurality of non-light-emitting end ridges, a plurality of ridges with different period DBRs and an optical absorption area. The application effectively clamps the gain center wavelength through the multi-DBR structure, so that the center wavelength of the light emitted by the device is different, and then the problem that the spectrum is narrowed due to the fact that the photons close to the center gain wavelength are amplified more and the photons far away from the center gain wavelength are amplified less when the current is increased is effectively suppressed, so that the spectrum width of the device is effectively widened. The tilted ridge structure is adopted, the wide-spectrum antireflection film with a reflectivity less than 2% is deposited on the front and rear cavity surfaces, and the optical absorption area is formed on the non-light-emitting end of the device, so that the F-P oscillation is effectively suppressed through the above three methods, and the emitted light is ensured to be super-radiation light.

This invention provides a broadband high-power superluminescent diode based on tunnel junction cascade, comprising an epitaxial structure and matched n-electrodes and p-electrodes. The epitaxial structure includes an n-type confinement layer, a p-type confinement layer, x light-emitting structures, and (x-1) tunnel junctions. The x light-emitting structures and (x-1) tunnel junctions are disposed between the n-type and p-type confinement layers along the epitaxial growth direction. Each tunnel junction is disposed between two adjacent light-emitting structures, and the two adjacent light-emitting structures are electrically cascaded via the tunnel junctions. The n-type and p-type confinement layers form a unique pair of confinement layer structures, and the x light-emitting structures operate together within the same pair of confinement layer structures. By setting a unique pair of confinement layer structures, this invention eliminates the multi-waveguide characteristics of the longitudinal refractive index distribution, thereby suppressing longitudinal multimode and near-field multi-peak phenomena, significantly improving the coupling efficiency and beam quality of the device, and simultaneously achieving high power and broadband output.

A module accommodates multiple superluminescent light emitting diodes, SLEDs, 12r, 12g and 12b. The SLEDs are arranged in an enclosure and output respective light beams to propagate into free space within the enclosure. The individual light beams from the SLED sources are combined into a single beam path within the enclosure using beam combiners 40r-g, 40rg-b. Each beam combiner is realized as a planar optical element, the back side of which is arranged to receive a SLED beam and route it through the optical element to the front side where it is combined with another SLED beam that is incident on and reflected by the front side. The free-space propagating combined beam is output from the module via an optical fiber 42 (or through a window).

A circularly polarized superluminescent diode (SLD), its preparation method, and its application relate to the field of circularly polarized SLD technology, solving the problems of low output efficiency, poor spectral compatibility, and system complexity of traditional technologies. The diode has a convex cross-section, with the lower half being a distributed Bragg reflector (DBR), and the upper half comprising, from bottom to top, an ITO cathode, a refractive index control layer, an electron transport layer, a chiral active layer, an electron blocking layer, a hole transport layer, a polyimide insulating layer, and an Ag anode; the rear cavity surface is provided with an Ag high-reflection layer; the DBR consists of alternating layers of high and low refractive index; the refractive index control layer comprises a parylene-C insulating layer and an Al2O3 / ZrO2 nanolayer; and the chiral active layer uses chiral organic small molecules, chiral organometallic complexes, or chiral conjugated polymers. The present invention can be used for optical coherence tomography, providing a new solution for multi-scenario integrated photonic devices.

This invention proposes a superluminescent light-emitting diode (SLD), belonging to the technical field of light-emitting diodes, to solve the technical problem of SLDs being sensitive to cavity surface reflection and prone to spectral ripple. The SLD of this invention includes a substrate, on the front side of which an epitaxial material is grown. A waveguide structure is formed on the upper surface of the epitaxial material. The waveguide structure includes a short curved waveguide absorption region, a straight waveguide emitting region, and a long curved waveguide absorption region connected end-to-end. The length of the long curved waveguide absorption region is greater than the length of the short curved waveguide absorption region. The long curved waveguide absorption region is located at one end of the front cavity surface, and the short curved waveguide absorption region is located at one end of the rear cavity surface. The front face of the long curved waveguide absorption region is the light-emitting surface. Electrodes are provided on the straight waveguide emitting region to form a beam-emitting region. The SLD prepared by this invention exhibits high power, wide spectrum, and low spectral ripple output performance.

The invention provides in embodiments a light generating system (1000) comprising a first light generating device (100), a first luminescent material (210), and a second luminescent material (220), wherein: A) the first light generating device (110) is configured to generate first device light (111), wherein the first light generating device (110) comprises a first light source (10) selected from the group of a superluminescent diode and a laser; B) the first luminescent material (210) comprises a line absorber and line emitter luminescent material providing a first luminescent material emission (211) comprising a line emission at a first wavelength (λL,1) upon excitation with the first device light (111); C) the second luminescent material (220) comprises a broad band emitter luminescent material providing a second luminescent material emission (221) comprising a broad band emission upon excitation with the first device light (111), wherein the second luminescent material emission (221) has a second centroid wavelength (λLC,2), wherein |λL,1-λLC,2|≤20 nm; D) the first light generating device (110) is configured to pump one or more of the first luminescent material (210) and the second luminescent material (220) with the first device light (111); and E) the light generating system (1000) is configured to generate system light (1001) comprising one or more of the first luminescent material emission (211) and the second luminescent material emission (221).

The invention provides a light generating system (1000). The light generating system (1000) comprises a first light generating device (2100), a light emitting body (210), a reflective polarizer (500) and a control system (300), wherein the first light generating device (2100) is configured to generate pump light (2101) having a controllable polarization, wherein the polarization is controllable between a first polarization and a second polarization; wherein the first light generating device (2100) comprises a first solid state light source (10) selected from the group comprising a super light emitting diode and a laser diode; wherein the luminophor (210) comprises a luminescent material (200); wherein the luminophor (210) is configured to (a) transmit at least a portion of the pump light (2101) (comprising the first polarization and / or the second polarization) and (b) convert at least a portion of the pump light (2101) (comprising the first polarization and / or the second polarization) into luminescent material light (201); wherein the reflective polarizer (500) is arranged downstream of the light emitter (210); wherein the reflective polarizer (500) is transmissive for at least a portion of the luminescent material light (201); wherein the reflective polarizer (500) has a higher transmittance for the pump light (2101) comprising the first polarization than for the pump light (2101) comprising the second polarization, and wherein the reflective polarizer (500) has a lower reflectivity for the pump light (2101) comprising the first polarization than for the pump light (2101) comprising the second polarization; wherein the light generating system (1000) is configured to generate system light (1001); and wherein the control system (300) is configured to control spectral characteristics of the system light (1001) by controlling polarization of the pump light (2101).

A light source module (100) with integrated wavemeter components (460, 494, 495) for stabilizing the output power and wavelength of a superluminescent diode or other broadband semiconductor light sour

A monolithic edge-emitting semiconductor diode array chip (100) comprises a one-dimensional array (70) of diode emitters (50), such as laser diodes, superluminescent diodes or semiconductor optical amplifiers. Semiconductor layers are arranged on a conductive substrate (1) and include active region layers (14) arranged between upper and lower cladding layers (12, 16) and separation layers (4, 5) arranged between the conductive substrate (1) and the lower cladding layer (16). The diode emitters (50) are formed by respective ridges (9) that are separated by trenches (25) which are sufficiently deep to penetrate into the separation layers (4, 5). Each diode (50) has its own upper and lower contacts (22, 24) that allow each diode (50) to be independently drivable with a current source driver circuit connected to push a modulated push current through its associated diode and / or a current sink connected to extract a modulated pull current through its associated diode.

The invention provides a light generating system (1000) comprising (i) a plurality of light sources (110, 120,...), (ii) a first luminescent material (210) and (iii) a second luminescent material (220), wherein: (a) a first light source (110) is configured to generate first light source light (111) having one or more wavelengths in a blue wavelength range and having a first centroid wavelength (λC1), wherein the first light source (110) is a laser; (b) the first luminescent material (210) is configured to convert at least part of the first light source light (111) into first luminescent material light (211) having one or more wavelengths in a green and / or yellow wavelength range; (c) a second light source (120) is configured to generate second light source light (121) having one or more wavelengths in a yellow and / or orange wavelength range and having a second centroid wavelength (λC2), wherein λC2> λC1; wherein the second light source (120) is a superluminescent diode; (d) the second luminescent material (220) is configured to convert at least part of the second light source light (121) into second luminescent material light (221) having one or more wavelengths in an orange and / or red wavelength range; and (e) in an operational mode, the light generating system (1000) is configured to generate system light (1001) comprising the first luminescent material light (211) and the second luminescent material light (221).

A three-segment integrated high-power superluminescent diode and its fabrication method belong to the technical field of optoelectronic device structures and processing technologies. They address the technical problem of directional amplification of the optical power output by a superluminescent diode based on a three-segment integrated structure. The diode comprises a three-segment integrated structure, which is a cascade structure consisting of a DBR grating region, a J-ridge waveguide superluminescent diode region, and a semiconductor optical amplifier region connected in sequence. The three-segment integrated structure comprises a multi-layer structure from bottom to top, comprising: a lower electrode, a lower substrate, a lower confinement layer, an MQW multi-quantum well active layer, an upper confinement layer, an upper substrate, and an upper electrode. The DBR grating region comprises a transversely tapered waveguide structure with a waveguide layer and a cladding. The J-ridge waveguide superluminescent diode region consists of a curved waveguide portion and a straight waveguide portion. The semiconductor optical amplifier region is a tapered traveling wave structure. The present invention is suitable for optical coherence tomography and fiber optic gyroscopes to achieve optical power amplification.

Method for determining a layer thickness of a layer applied to a substrate (2-2g), in particular a lacquer layer, in which at least one surface region (7-7c; 22-25; 22e-25e; 27; 7g) of the coated substrate (2-2g) is heated by irradiation with at least one radiation source (5-5b; 5c, 19; 5d-g) or by irradiation with at least one radiation source (5-5b; 5c, 19; 5d-g) and inductively, and thermal radiation emitted by the at least one surface region (7-7c; 22-25; 22e-25e; 27; 7g) is detected by a detection device (8-8g) and the layer thickness is determined based on the emitted thermal radiation, characterized in that the at least one surface region is provided for heating with at least one superluminescent diode, at least one thermal radiator and / or at least one Quantum cascade laser irradiation.

The invention provides a light generating system (1000) comprising: (i) a first set (1100) comprising n1 first light generating devices (110), (ii) a first optical element (410), and (iii) a luminescent body (200), wherein: —the n1 first light generating devices (110) are configured to generate first device light (111); wherein the n1 first light generating devices (110) may be selected from the group of lasers and superluminescent diodes; —the first set (1100) comprises k1 first subsets (1115) of each at least one first light generating device (110) of the n1 first light generating devices (110), wherein n1≥3, especially n1≥5, and 2≤k1≤n1; —the luminescent body (200) is configured to: (i) convert part of the first device light (111) into luminescent material light (211), and (ii) transmit part of the first device light (111); —the n1 first light generating devices (110) and the first optical element (410) are configured to provide first beams (115) of first device light (111) to the luminescent body (200), wherein two or more first beams (115) of two or more first light generating devices (110) of the k1 first subsets (1115) have different first angles of incidence (α1) relative to a normal to the luminescent body (200); and—in an operational mode of the light generating system (1000) a first intensity of the first device light (111) of the k1 first subsets (1115) is dependent upon the first angles of incidence (α1).

Disclosed is a thin film characteristic measuring apparatus, which is used for measuring the thickness or width of a thin film of an object to be examined. The thin film characteristic measuring apparatus comprises a light source, a first reflecting mirror, a first actuator and a lens assembly. The lens assembly is formed so that the angle formed by an optical axis and a chief ray of the rays transmitted through the lens assembly is less than or equal to the angle formed by the optical axis and a chief ray of the rays incident to the lens assembly. The light source can comprise superluminescent diodes (SLD). Provided is the thin film characteristic measuring apparatus, which enables the light transmitted through the lens assembly to reciprocate on an incident surface of the object to be examined while the first reflecting mirror repeatedly tilts within a predetermined angle range, and thus can accurately measure a relatively large area and can variously control a position to be measured, a method and the like.

The application relates to a gallium arsenide-based super-radiation light-emitting diode and a preparation method thereof, and mainly solves the technical problem that when a cavity surface is coated with an anti-reflection film in combination with a non-pumping absorption zone and a curved waveguide, an inclined waveguide, a tapered waveguide and other technologies to suppress light oscillation in a resonance cavity, resonance gain still exists, which has a negative impact on the power and other performances of the gallium arsenide-based super-radiation light-emitting diode. The gallium arsenide-based super-radiation light-emitting diode comprises a substrate layer, an epitaxial layer arranged on the substrate layer, and a metal layer arranged on the epitaxial layer; the metal layer is in a straight line type structure; the light-out surface and the back-light surface of the substrate layer and the epitaxial layer are arranged in parallel to each other, and the light-out surface and the back-light surface are both arranged in an inclined manner along the direction from the back-light surface to the light-out surface; an obtuse angle formed by the light-out surface and the back-light surface with a horizontal direction is defined as an inclination angle alpha, and the value of alpha is 100-110 degrees; the light-out surface is coated with an AR reflection film, and the reflectivity is 0.5-50%; and the back-light surface is coated with an HR reflection film, and the reflectivity is greater than 90%.

In one embodiment of a superluminescent diode, a first diode adapted on a semiconductor die is to be forward-biased to output optical energy in response to a bias signal, and a second diode adapted on the semiconductor die is to be reverse-biased, the second diode to receive and absorb back propagating optical energy from the first diode and output a measure of the back propagating optical energy as an absorber feedback current. A comparator may be configured to compare the absorber feedback current to a reference current and output a comparison signal, and a driver control circuit coupled to the comparator may provide the bias signal based at least in part on the comparison signal. Other embodiments are described and claimed.