7 results about "Superluminescent diode" patented technology

The invention provides a light generating system (1000) comprising a first light generating arrangement (2100), a luminescent body (210), a reflective polarizer (500), and a control system (300); wherein the first light generating arrangement (2100) is configured to generate pump light (2101) having a controllable polarization, wherein the polarization is controllable between a first polarization and a second polarization; wherein the first light generating arrangement (2100) comprises a first solid state light source (10) selected from the group comprising a superluminescent diode and a laser diode; wherein the luminescent body (210) comprises a luminescent material (200); wherein the luminescent body (210) is configured to (a) transmit at least part of the pump light (2101) (comprising the first polarization and / or the second polarization) and (b) convert at least part of the pump light (2101) (comprising the first polarization and / or the second polarization) into luminescent material light (201); wherein the reflective polarizer (500) is configured downstream of the luminescent body (210); wherein the reflective polarizer (500) is transmissive for at least part of the luminescent material light (201); wherein the reflective polarizer (500) has a higher transmission for the pump light (2101) comprising the first polarization than for the pump light (2101) comprising the second polarization, wherein the reflective polarizer (500) has a lower reflectivity for the pump light (2101) comprising the first polarization than for the pump light (2101) comprising the second polarization; wherein the light generating system (1000) is configured to generate system light (1001); and wherein the control system (300) is configured to control spectral properties of the system light (1001) by controlling the polarization of the pump light (2101).

This invention provides a broadband high-power superluminescent diode based on tunnel junction cascade, comprising an epitaxial structure and matched n-electrodes and p-electrodes. The epitaxial structure includes an n-type confinement layer, a p-type confinement layer, x light-emitting structures, and (x-1) tunnel junctions. The x light-emitting structures and (x-1) tunnel junctions are disposed between the n-type and p-type confinement layers along the epitaxial growth direction. Each tunnel junction is disposed between two adjacent light-emitting structures, and the two adjacent light-emitting structures are electrically cascaded via the tunnel junctions. The n-type and p-type confinement layers form a unique pair of confinement layer structures, and the x light-emitting structures operate together within the same pair of confinement layer structures. By setting a unique pair of confinement layer structures, this invention eliminates the multi-waveguide characteristics of the longitudinal refractive index distribution, thereby suppressing longitudinal multimode and near-field multi-peak phenomena, significantly improving the coupling efficiency and beam quality of the device, and simultaneously achieving high power and broadband output.

This invention proposes a superluminescent light-emitting diode (SLD), belonging to the technical field of light-emitting diodes, to solve the technical problem of SLDs being sensitive to cavity surface reflection and prone to spectral ripple. The SLD of this invention includes a substrate, on the front side of which an epitaxial material is grown. A waveguide structure is formed on the upper surface of the epitaxial material. The waveguide structure includes a short curved waveguide absorption region, a straight waveguide emitting region, and a long curved waveguide absorption region connected end-to-end. The length of the long curved waveguide absorption region is greater than the length of the short curved waveguide absorption region. The long curved waveguide absorption region is located at one end of the front cavity surface, and the short curved waveguide absorption region is located at one end of the rear cavity surface. The front face of the long curved waveguide absorption region is the light-emitting surface. Electrodes are provided on the straight waveguide emitting region to form a beam-emitting region. The SLD prepared by this invention exhibits high power, wide spectrum, and low spectral ripple output performance.

A monolithic edge-emitting semiconductor diode array chip (100) comprises a one-dimensional array (70) of diode emitters (50), such as laser diodes, superluminescent diodes or semiconductor optical amplifiers. Semiconductor layers are arranged on a conductive substrate (1) and include active region layers (14) arranged between upper and lower cladding layers (12, 16) and separation layers (4, 5) arranged between the conductive substrate (1) and the lower cladding layer (16). The diode emitters (50) are formed by respective ridges (9) that are separated by trenches (25) which are sufficiently deep to penetrate into the separation layers (4, 5). Each diode (50) has its own upper and lower contacts (22, 24) that allow each diode (50) to be independently drivable with a current source driver circuit connected to push a modulated push current through its associated diode and / or a current sink connected to extract a modulated pull current through its associated diode.

The invention provides a light generating system (1000) comprising a first solid state light source (10), a first luminescent converter (2100), a second luminescent converter (2200), and a first thermally conductive body (3100); wherein: (A) the first luminescent converter (2100) and the second luminescent converter (2200) are configured physically separated by a shortest distance d1, thereby defining an inter-converter cavity (1200); wherein 0.3 mm ≤ d1 ≤ 3 mm; (B) the first luminescent converter (2100) comprises a first converter first major face (2110) and a first converter second major face (2120) opposite the first converter first major face (2110); wherein the first luminescent converter (2100) is configured in thermal contact with the first thermally conductive body (3100) at the first converter second major face (2120); (C) the first solid state light source (10) comprises a laser light source and / or a superluminescent diode, wherein the first solid state light source (10) is configured to generate first light source light (11); wherein the first solid state light source (10) is configured to irradiate the first converter first major face (2110) via a first optical path (31) between the first solid state light source (10) and the first luminescent converter (2100); wherein the first optical path (31) intersects at least part of the inter-converter cavity (1200) and passes by the second luminescent converter (2200); wherein the first luminescent converter (2100) is configured in the reflective mode; wherein the first luminescent converter (2100) is configured to (i) convert part of the first light source light (11) received by the first luminescent converter (2100) into first luminescent converter light (2101), and (ii) reflect at least part of the first light source light (11) received by the first luminescent converter (2100) to the second luminescent converter (2200) as reflected first light source light (111); (D) the second luminescent converter (2200) is configured to (a) convert at least part of the reflected first light source light (111) received by the second luminescent converter (2200) into second luminescent converter light (2201), and (b) transmit at least part of the first luminescent converter light (2101) received by the second luminescent converter (2200); wherein the second luminescent converter (2200) is configured in the transmissive mode; and (E) the light generating system (1000) is configured to generate system light (1001) comprising (a) first luminescent converter light (2101) transmitted by the second luminescent converter (2200) and (b) second luminescent converter light (2201).

The invention provides a light generating system (1000) comprising a first light generating device (110), a second light generating device (120), a luminescent material (200), a first optical element (410), and a control system (300), wherein: the first light generating device (110) is configured to generate blue first device light (111), wherein the first light generating device (110) comprises one or more of a laser diode and a superluminescent diode; wherein the second light generating device (120) is configured to generate red second device light (121), wherein the second light generating device (120) comprises one or more of a laser diode and a superluminescent diode; the luminescent material (200) is configured downstream of the first light generating device (110), wherein the luminescent material (200) is configured to convert at least part of the first device light (111) into luminescent material light (201) having one or more wavelengths in the green-yellow wavelength range; the first optical element (410) is configured in a light receiving relationship with the first light generating device (110) and the luminescent material (200); wherein (i) the first optical element (410) has a controllable wavelength dependent transmission in the blue wavelength range, and / or (ii) the first optical element (410) has a controllable wavelength dependent reflection in the blue wavelength range; the light generating system (1000) is configured to generate system light (1001) comprising one or more of the first device light (111), the second device light (121), and the luminescent material light (201); and the control system (300) is configured to control a spectral power distribution of the system light (1001) by controlling the first optical element (410), wherein the control system (300) is configured to control the correlated color temperature of the system light (1001) at a value selected from the range of 1800-6500 K, wherein the correlated color temperature of the system light (1001) is controllable over a CCT control range of at least 250 K within the range of 1800-6500 K.

The invention provides a light generating system (1000) comprising a blueish light generating device (120), an diffuser light generating device (130), optics (500), a diffuser assembly (700), and a light exit (1090); wherein: (A) the blueish light generating device (120) is configured to provide blueish device light (121) having a blueish centroid wavelength (λc2) selected from the wavelength range of 430-490 nm, and comprises a blueish solid state light source (20); (B) the diffuser light generating device (130) is configured to provide diffuser device light (131) having a diffuser centroid wavelength (λc3) selected from the wavelength range of 470-780 nm, and comprises a diffuser solid state light source (30); wherein |λc3-λc2| ≥ 10 nm; (C) the blueish and diffuser solid state light sources (20,30) are selected from the group comprising laser diodes, superluminescent diodes, and stacked multi-junction light-emitting diodes; (D) the optics (500) comprise a diffuser redirection optical element (530), configured in an optical path between (i) the blueish light generating device (120) and (ii) the diffuser light generating device (130) and the diffuser assembly (700); wherein the diffuser redirection optical element (530) is configured to direct (i) blueish device light (121) and (ii) diffuser device light (131) into an optical path to the diffuser assembly (700); (E) the diffuser assembly (700) comprises a diffuser (710) configured to diffuse at least part of the blueish device light (121) into diffused blueish device light (721), and at least part of the diffuser device light (131) into diffused diffuser device light (731); (F) the diffuser redirection optical element (530) is further configured to direct (i) the diffused blueish device light (721), and (ii) the diffused diffuser device light (731) into an optical path to the light exit (1090); wherein (i) an optical axis of the blueish device light (121) upstream of the diffuser redirection optical element (530), and (ii) an optical axis of the diffused blueish device light (721) and the diffused diffuser device light (731) downstream of the diffuser redirection optical element (530) are co-axial; wherein the light generating system (1000) is configured such, that the blueish device light (121) and the diffuser device light (131) are incident on the diffuser redirection optical element (530) from orthogonal directions; and (G) the light generating system (1000) is configured to generate system light (1001), wherein in a first operational mode the system light (1001) comprises at least part of (i) the diffused blueish device light (721) and (ii) the diffused diffuser device light (731).