11 results about "Reflective semiconductor optical amplifier" patented technology

The invention provides a state-adjustable double-gain optical structure on a silicon substrate and a laser radar system, and relates to the technical field of laser radars. The adjustable double-gain optical structure on the silicon substrate comprises a first reflection type semiconductor optical amplifier, a second reflection type semiconductor optical amplifier, a first phase modulator, a second phase modulator, a first optical coupler, a third phase modulator, a fourth phase modulator, a second optical coupler, a first port and a second port. A reflected light electric field and a transmission light electric field are adjusted by adjusting the phase difference between the two reflection type semiconductor optical amplifiers. A laser radar system is formed by a plurality of state-adjustable double-gain optical structures on a silicon substrate, a transmitting optical phased array, a receiving optical phased array, a balanced photoelectric detector and the like, the transmitting power of the transmitting optical phased array is flexibly adjusted, meanwhile, a plurality of reflection type semiconductor optical amplifiers are adopted, the laser radar power is remarkably improved, and the laser radar system is suitable for large-scale popularization and application. And long-distance detection of the laser radar system based on the optical phased array is realized.

Provided are arrangements of optical elements that combine the features of a high power, compact laser that exhibits narrow linewidth output and that does not appreciably shift in wavelength or vary in power over a wide range of temperatures. Such arrangements include a transmission filter and a Bragg reflector that select out the wavelength for which the output power of a reflective semiconductor optical amplifier (RSOA) is least affected by changes in temperature over a temperature range of interest. Such arrangements may also utilize temperature-insensitive materials.

The application provides a silicon substrate adjustable double-gain optical structure and a laser, and relates to the technical field of lasers.The silicon substrate adjustable double-gain optical structure comprises a first reflective semiconductor optical amplifier, a second reflective semiconductor optical amplifier, a first phase modulator, a second phase modulator, a first optical coupler, a third phase modulator, a fourth phase modulator, a second optical coupler, a first port and a second port.The distribution ratio between reflected light and transmitted light is adjusted by adjusting the phase difference between the two reflective semiconductor optical amplifiers.The laser is configured by a plurality of silicon substrate state-adjustable double-gain optical structures configured as a half-transmission half-reflection device and selectively accessing optical amplifiers configured by the silicon substrate state-adjustable double-gain optical structures, the power of the laser is significantly improved, the chip structure is mixed and integrated, the laser does not contain an optical fiber, and the laser structure is more compact and stable.

The invention provides an adjustable double-gain optical structure on a silicon substrate and a laser, and relates to the technical field of lasers. The adjustable double-gain optical structure on the silicon substrate comprises a first reflection type semiconductor optical amplifier, a second reflection type semiconductor optical amplifier, a first phase modulator, a second phase modulator, a first optical coupler, a third phase modulator, a fourth phase modulator, a second optical coupler, a first port and a second port. The distribution proportion between the reflected light and the transmitted light is adjusted by adjusting the phase difference between the two reflective semiconductor optical amplifiers. A laser is formed by utilizing a semi-transparent semi-reflecting device configured by a plurality of state-adjustable double-gain optical structures on a silicon substrate and an optical amplifier configured by selectively accessing the state-adjustable double-gain optical structures on the silicon substrate, the power of the laser is remarkably improved, a hybrid integrated chip structure is realized, optical fibers are not contained, and the laser has a wide application prospect. The laser is more compact and more stable in structure.

An optoelectronic device includes a reflective semiconductor optical amplifier (RSOA), which includes a gain medium to amplify laser radiation within a given gain band, a first reflector at a first end of the gain medium, and a waveguide coupled to convey the laser radiation into and out of a second end of the gain medium. An external laser cavity, disposed on an optical substrate, is optically coupled to the waveguide. The external laser cavity includes a second reflector, a comb filter, disposed between the second reflector and the RSOA and configured to pass a set of distinct wavelength sub-bands within the gain band, the set of distinct wavelength sub-bands defining a comb, and a bandpass filter between the second reflector and the RSOA in series with the comb filter, having a passband encompassing a subset of the wavelength sub-bands in the comb.

The application discloses a kind of photonic reservoir computing system based on reflective semiconductor optical amplifier, comprising: input layer, reservoir layer and output layer;Wherein, the pre-processing of signal is carried out in input layer, the masking process to input signal is completed, and the masked input signal is injected into reservoir layer;In the reservoir layer, the output light of RL is sampled at equal time interval, and N sampling points are obtained as the virtual nodes of reservoir;In the output layer, the state of all virtual nodes from RL to RSOA delay line is recorded, and the optimal readout weight is calculated by ridge regression algorithm, then the virtual node state and readout weight are linearly weighted and summed, to obtain the final result.

The application provides a silicon substrate state-adjustable double-gain optical structure and a laser radar system, and relates to the technical field of laser radar.The silicon substrate state-adjustable double-gain optical structure comprises a first reflective semiconductor optical amplifier, a second reflective semiconductor optical amplifier, a first phase modulator, a second phase modulator, a first optical coupler, a third phase modulator, a fourth phase modulator, a second optical coupler, a first port and a second port; and the reflected light electric field and the transmitted light electric field are adjusted by adjusting the phase difference between the two reflective semiconductor optical amplifiers.The laser radar system is formed by using multiple silicon substrate state-adjustable double-gain optical structures, a transmitting optical phased array, a receiving optical phased array and a balanced photodetector, the transmitting power of the transmitting optical phased array is flexibly adjusted, multiple reflective semiconductor optical amplifiers are used, the laser radar power is significantly improved, and long-distance detection of the laser radar system based on the optical phased array is realized.

The optical transmitter includes: a mode-locked laser light source; a plurality of semiconductor modulators; an optical filter configured to pass light in a passband from modulated light being modulated by a first semiconductor modulator; an optical monitor configured to monitor the passed light; a wavelength controller controlling a wavelength of the light from the mode-locked laser light source, based on the monitored result; and a bias controller controlling a bias voltage of the first semiconductor modulator, based on the monitored result. The mode-locked laser light source includes a reflective semiconductor optical amplifier, an external cavity including a multiplying filter configured to multiply a longitudinal mode spacing of the mode-locked laser light source, and a multiplying filter adjustment heater configured to be able to heat the multiplying filter.

The application relates to the technical field of optical communication, and provides a laser chip, which comprises an electro-absorption modulator and a semiconductor optical amplifier, further comprises a reflection grating for reflecting spontaneous emission light of the reflection semiconductor optical amplifier, the semiconductor optical amplifier is arranged on the light-emitting side of the electro-absorption modulator, the reflection grating is arranged in the area where the semiconductor optical amplifier is located, and the reflection grating is arranged close to the area where the electro-absorption modulator is located. A laser chip preparation method is also provided. Through the arrangement of the reflection grating, the spontaneous emission light of the semiconductor optical amplifier can be reflected, optical crosstalk is reduced, and signal quality is improved.

The invention provides a multichannel interference multiplexing type external cavity laser chip, and relates to the technical field of external cavity lasers, and the multichannel interference multiplexing type external cavity laser chip comprises an external cavity, a first reflection type semiconductor optical amplifier array and a second reflection type semiconductor optical amplifier array. The outer cavity comprises a first light reflector, a light switch, a free spectrum transmission area, a phase shifter array, a light delay line array and a second light reflector. According to the invention, wavelength multiplexing and tuning are realized by using a single external cavity, so that the integration level of the external cavity laser is improved; through different central gain wavelengths of the first reflection type semiconductor optical amplifier array and the second reflection type semiconductor optical amplifier array, multi-wavelength optical signal output is ensured to be formed under two wave bands by utilizing the difference of the gain wavelengths, so that the wavelength coverage range and the application scene of the laser are expanded, and the optical signal output efficiency is improved. And ultra-large bandwidth wavelength tuning of the external cavity laser is realized.

The application discloses an external cavity laser and a regulating method. The external cavity laser comprises a reflective semiconductor optical amplifier, a converter and an external cavity. The reflective semiconductor optical amplifier is used for generating spontaneous emission light. The converter is used for realizing mutual conversion of the spontaneous emission light and TE polarized light. The external cavity comprises a phase shifter, a nanobeam cavity and a tunable ring mirror arranged in sequence. The TE polarized light is transmitted to the nanobeam cavity after being phase-shifted by the phase shifter, and is transmitted to the tunable ring mirror after being primarily selected in frequency by the nanobeam cavity. The tunable ring mirror makes the TE polarized light return along the original path by dynamically controlling reflectivity. The external cavity laser designed in the application inherits the advantages of high Q value, ultra-small size and high transmittance of the nanobeam cavity, introduces feedback regulation capability, realizes dynamic compensation of gain unevenness, optimizes output power flatness and expands the tuning range.