9results about How to "Increase laser power" patented technology

The semiconductor laser element sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top, and the quantum limiting stark regulation and control layer is arranged between the active layer and the lower waveguide layer. The electric field distribution of the active layer is regulated and controlled, domain wall motion is induced to be generated, the quantum limited stark effect and InN phase separation of the active layer are inhibited, the interface quality is improved, and the non-radiative recombination center is reduced; light field limitation and limiting factors are enhanced, and the light power of the laser is improved; the quantum confinement stark regulation and control layer generates lattice displacement to induce phase change, improves mutual solution gaps of InN and GaN, inhibits InN segregation of the active layer and the waveguide layer, reduces In component fluctuation, reduces thermal degradation, improves interface crystal quality and thermal stability, reduces a non-radiative recombination center, and improves laser power and slope efficiency.

The present application relates to the field of photoelectric detection and intelligent identification, in particular to a cat-eye target detection active imaging system and method based on intelligent vision, comprising: an active illumination module for outputting a pulse laser with adjustable parameters, actively illuminating a target scene, and exciting a cat-eye effect backscatter echo of an optical device in the target scene; a coaxial imaging acquisition module for receiving the backscatter echo of the target scene and collecting information; an intelligent vision processing module for intelligently processing the received image data, outputting target information and scene perception data; an adaptive control module for constructing a closed-loop control link according to the scene perception data and the target information; a display and storage module for realizing human-computer interaction, displaying and storing real-time imaging pictures and target information. Thus, the problems of high false alarm rate, limited detection distance, poor environmental adaptability, and inability to realize target fine classification and continuous tracking in the prior art are solved.

The application provides a compact laser beam combination quality detection system and method based on a microlens array, which comprises an optical signal detection part and a signal processing system, the optical signal detection part comprises an optical system and a detector, the optical system divides complete laser beams passing through a beam combination system into multiple micro light waves and then converges the multiple micro light waves, the detector detects the light intensity of each micro light wave and records the focus point position, and the signal processing part judges the laser beam combination quality according to the light intensity and the focus point position information obtained by the detector. The compact laser beam combination quality detection system and method based on the microlens array can realize accurate detection of the laser beam combination quality by using only one microlens array and one detector, has a simple structure, a short optical path, and an output signal which does not need complex processing and is convenient to use.

The present invention relates to a method for optimizing mass spectrometer parameters for efficient detection of proteins. By pre-screening the pulsed ion extraction (PIE) value, laser power and / or detector gain value that maximizes the sensitivity and accuracy of the detection signal, the present invention can establish optimal parameters for a target protein using a reference protein having a similar molecular weight to the target protein. Even when a low-resolution mass spectrometry device (e.g., MALDI-TOF) is used, the present invention can detect a trace amount of a target protein with high sensitivity, accuracy and reproducibility, thereby providing a high-sensitivity analysis result that is not affected by changes in the environment at the time of detection. Furthermore, by establishing a linear proportional relationship between the molecular weight of the target protein and the optimal PIE value, and deriving a linear equation therefrom, the present invention can simply calculate the optimal PIE value that maximizes the performance of the mass spectrometer using only the mass information of the target protein, without the need for a reference protein.

A material processing apparatus including a laser processing station (425) configured to process a substrate (430) of crystalline material. The laser processing station (425) includes a laser configured to form subsurface laser damage (434) regions within an interior of the substrate (430), at least one translation stage configured to effect relative movement between the laser and the substrate (430), and a diffuse light source (438) configured to illuminate a top surface (433) of the substrate (430). The laser processing station (425) also includes an imaging device (442) configured to generate an image of the top surface (433) of the substrate (430). The apparatus also includes a computing device configured to analyze the image to identify a condition indicative of presence of uncracked regions in the interior of the substrate (430).

This invention discloses an adsorption-type laser drilling platform, comprising a first plate and a second plate. The front of the first plate has several arrayed first grooves, and the top surface of the structural beams around the first grooves is also provided with first adsorption holes. The periphery of the first grooves is also provided with second adsorption holes. The interior of the second plate has a stepped structure, including the first grooves and an extension, with the first plate located on the extension. The top surface of the second plate is provided with third adsorption holes for adsorbing materials. The sidewalls of the second plate are provided with multiple air supply holes. The upper half of the second plate is provided with an air channel, and the air supply holes are connected to the third adsorption holes through the air channel to form an external air path. The lower half of the second plate is also provided with a through-hole cavity air hole, which is connected to the first adsorption holes and the second adsorption holes through the cavity to form an internal air path.

The present invention relates to a method for improving the quality of laser beams. Starting from the divergence angle, a parameter that affects the quality of the beam, the method proposes to use the angular correlation of the diffraction efficiency of a bulk acousto-optic device to strip out the low beam quality portion of the laser with a large divergence angle, and only retain the high beam quality portion, so as to improve the quality of the laser beam. The method of the present invention does not produce the diffraction effect of a hard-edge light barrier because there is no hard edge blocking the laser, and because of the high light transmittance of the bulk acousto-optic device, it can withstand a large laser power and is more suitable for high-power lasers.

This invention relates to a laser plasma source with refraction, reflection, and focusing, comprising a shaping assembly, a refraction focusing assembly, a gas chamber, a reflection focusing assembly, and an exit window. The shaping assembly includes a conical lens group or an aspherical lens, through which the laser beam is formed into a ring beam. The refraction focusing assembly includes several lenses that focus the ring beam onto the gas chamber to generate and maintain plasma. The reflection focusing assembly includes a reflector and an ellipsoidal mirror; the gas chamber is placed at the first focal point of the ellipsoidal mirror; the laser beam passing through the plasma is reflected by the reflector to the ellipsoidal mirror, and then focused onto the plasma after a second reflection by the ellipsoidal mirror; the ultraviolet and visible light generated by the plasma are reflected by the ellipsoidal mirror and focused onto a second focal point through the exit window, which has high infrared reflectivity. Compared with existing technologies, this invention eliminates the ultraviolet reflection-infrared transmission beam splitter, reducing the complexity of the optical system and significantly reducing the cost of optical components.

The wafer multi-light-spot cutting system comprises a mixed light emitter, a light splitting assembly, a light combining assembly and a beam expanding assembly, mixed light beams emitted by the mixed light emitter at least comprise two kinds of light beams with different wavelengths, and the light splitting assembly can split the mixed light beams into 2n sub light beams, the 2n sub light beams can enter the beam expanding assembly, the beam expanding assembly can adjust the focuses of different light beams, and the 2n sub light beams can be combined into a cutting light beam with at least two focuses in the vertical direction after entering the light combining assembly. The invention further discloses a wafer multi-light-spot cutting method, the wafer is cut through the wafer multi-light-spot cutting system, multi-light-spot cutting can be carried out, light loss is small, longitudinal cutting is even, perpendicularity is high, the heat effect and stress concentration can be reduced, and therefore the yield is increased.