256 results about "Surface plasmon" patented technology

The invention discloses a lithium-rich manganese-based positive electrode material with a core-shell structure, the general formula of the lithium-rich manganese-based positive electrode material is Li < 1 + a > Mn < x > Co < y > Ni < z > O < 2-b-d > (XOc) X < d >, the lithium-rich manganese-based positive electrode material has the core-shell structure, the core is a lithium-rich manganese-based material Li < 1 + a > Mn < x > Co < y > Ni < z > O < 2-b > (XOc) doped with disordered polyanions, and the shell is a lithium-rich manganese-based material Li < 1 + a > Mn < x > Co < y > Ni < z > O < 2-d > X < d > doped with gradient non-metal ions. The invention also provides a preparation method of the lithium-rich manganese-based positive electrode material with the core-shell structure, and the lithium-rich manganese-based positive electrode material with the core-shell structure is prepared by adopting a combined means of rapid Joule heat treatment and surface plasma cleaning treatment. The polyanion-doped bulk phase disordered structure design and the surface gradient non-metal ion-doped core-shell structure are realized. Wherein the bulk phase polyanions can fix transition metal elements to inhibit migration of the transition metal elements to a lithium layer, harmful consumption of active sites is reduced, and a lattice structure is stabilized. In addition, strong bond energy between surface nonmetal and transition metal elements can inhibit dissolution of transition metal in the circulation process, irreversible oxidation of oxygen is reduced, and generation of harmful phase change is inhibited.

The invention discloses a dual-band mode-locked fiber laser based on metasurface polarization control, and belongs to the technical field of fiber lasers. Comprising a first loop, a second loop and a common end, the first loop and the second loop are connected with the gold cross-shaped metasurface through the common end, and the first loop and the second loop are independent of each other and do not affect each other. According to the dual-band ultrafast laser device, based on the metal surface plasmon effect, the gold cross-shaped metasurface mode locking device is prepared, gold cross-shaped metasurface structures which are different in length in the horizontal direction and the vertical direction are designed respectively, the polarization and nonlinear saturable absorption characteristics of the gold cross-shaped metasurface structures are utilized, and the dual-band ultrafast laser device is obtained. And meanwhile, mode-locked laser output in two wavebands is realized, and the lasers in the two wavebands are mutually independent and do not influence each other.

The present invention discloses a terahertz three-dimensional unidirectional transmission waveguide based on magnetic surface plasmons, which is composed of a unidirectional transmission region and two artificial magnetic conductor layers with the same structure and opposite directions spliced on the left and right sides of the unidirectional transmission region; the unidirectional transmission region is an electrically opaque medium-magnetized semiconductor structure, and the artificial magnetic conductor is composed of a structure in which square metal rods are periodically extended in a dielectric background and placed on a metal floor; the artificial magnetic conductor can replace the ideal magnetic conductor boundary condition to support three-dimensional unidirectional transmission; the waveguide structure provided by the present invention realizes three-dimensional unidirectional transmission based on magnetic surface plasmons in the terahertz band, provides a solution for expanding such two-dimensional unidirectional waveguides to three-dimensional unidirectional waveguides, and has great application prospects in the miniaturization of non-reciprocal devices.

An ultra-strong vortex laser phase measurement method comprises the steps that an incident Gaussian laser pulse is divided into two paths, one path of Gaussian laser pulse serves as reference light, and the other path of Gaussian laser pulse generates ultra-strong vortex laser to serve as object light after passing through an off-axis phase plate; splitting the Gaussian laser pulse and the ultra-strong vortex laser into four beams to obtain Gaussian laser pulses Er, Er (1), Er (2) and Er (3) and ultra-strong vortex lasers Eo, Eo (1), Eo (2) and Eo (3); the ultra-strong vortex laser Eo (1) and the Gaussian laser pulse Er (1) are synthesized into interference laser Ei; after the phase of # imgabs0 # is introduced into the ultra-strong vortex laser Eo (2), the ultra-strong vortex laser Eo (2) and the Gaussian laser pulse Er (2) are synthesized into interference laser Ei, pi / 2; the depth information of the surface plasma holographic grating formed by irradiating the laser Ei, pi / 2, Er, Eo and Ei on the surface of the plasma target is detected, so that the precise measurement of the ultra-strong vortex laser phase distribution is realized.

The invention discloses a metasurface structure for realizing terahertz up-conversion luminescence, and belongs to the technical field of optics, the metasurface structure comprises a silicon dioxide substrate, a metal microstructure unit and a quantum dot luminescent material, and is innovatively provided with a dielectric isolation layer and a surface plasma enhancement layer, the dielectric isolation layer reduces the quenching effect of metal on quantum dots, and the surface plasma enhancement layer enhances the surface plasma on the quantum dots. The surface plasma enhancement layer enhances a local electric field. The metasurface structure for realizing terahertz up-conversion luminescence can effectively improve the terahertz visible light up-conversion efficiency, realizes high-sensitivity and quick-response terahertz detection at room temperature, improves the detection sensitivity, simplifies a detection system, has a wide application prospect in the fields of biomedicine, security inspection, communication and the like, and has a wide application prospect in the fields of biomedicine, security inspection, communication and the like. And the practical application development of the terahertz technology is promoted.

The invention provides a high-stability single-mode semiconductor laser based on dynamic wavefront shaping and a control system, and relates to the technical field of semiconductor lasers, comprising a semiconductor laser gain module, a dynamic wavefront shaping module, a single-mode screening module and a laser output module which are optically coupled in sequence, wherein the semiconductor laser gain module is composed of a quantum well structure gain chip, a distributed feedback grating and a surface plasma structure are integrated on the surface of an active area of the gain chip, and the distributed feedback grating and the surface plasma structure are combined on the surface of the active area through a surface etching process. According to the invention, through the dynamic wavefront shaping module and the multi-parameter closed-loop control system, real-time adaptive regulation and control of the whole laser output process are realized. According to the system, wavefront distortion can be rapidly detected and compensated in a complex disturbance environment, and response delay and manual intervention of traditional static correction are remarkably reduced.

The invention provides a process window determination method and a related device, and the method comprises the steps: building a surface plasma photoetching model corresponding to a surface plasma photoetching structure with an air layer, carrying out the simulation through the surface plasma photoetching model, and determining a photoresist pattern after photoetching, and the line width of the photoresist pattern; adjusting the exposure energy in the surface plasma photoetching model and the thickness of the air layer, and repeatedly executing the steps to obtain a plurality of corresponding relations among the exposure energy, the thickness of the air layer and the line width of the photoresist pattern; and determining a process window corresponding to the mask layer based on the corresponding relation and an allowable error range of the photoresist pattern and the mask layer. According to the method, the specific photoetching process of the surface plasma photoetching structure is simulated, and simulation is carried out for multiple times under different exposure energy and air layer thicknesses, so that materials and time are saved, the accuracy of a process window is improved, and the fluctuation tolerance of process parameters of surface plasma photoetching is improved.

This invention discloses a core-shell structured lithium-rich manganese-based cathode material with the general formula Li. 1+a Mn x Co y Ni z O 2‑b‑d (XO c ) b X d It has a core-shell structure, with the core being a disordered polyanion-doped lithium-rich manganese-based material, Li. 1+a Mn x Co y Ni z O 2‑b (XO c ) b The outer shell is made of lithium-rich manganese-based material Li, which is doped with gradient non-metallic ions. 1+ a Mn x Co y Ni z O 2‑d X d This application also provides a method for preparing a core-shell structured lithium-rich manganese-based cathode material. The method employs a combination of rapid Joule heating and surface plasma cleaning to prepare the aforementioned core-shell structured lithium-rich manganese-based cathode material, achieving a bulk disordered structure design with polyanion doping and a core-shell structure with surface gradient non-metallic ion doping. Specifically, the bulk polyanions can immobilize transition metal elements to suppress their migration to the lithium layer, reducing harmful consumption of active sites and stabilizing the crystal structure. Furthermore, the strong bond energy between the surface non-metallic elements and the transition metal elements can suppress transition metal dissolution during cycling, reducing irreversible oxygen oxidation and inhibiting harmful phase transitions.

The invention provides an optical fiber biosensor, a preparation method thereof and an optical fiber sensing system.The optical fiber biosensor comprises an optical fiber microstructure with an optical fiber sensing part and a surface plasma resonance layer, and the outer surface of the optical fiber sensing part is coated with the surface plasma resonance layer; the surface plasma resonance layer is used for exciting the optical fiber sensing part to generate surface plasma waves and combining or adsorbing a sensing target, and the surface plasma resonance layer is an AuNPs (at) MOF composite film; the AuNPs (at) MOF composite film is combined on the outer surface of the optical fiber sensing part through a chemical modification method, the optical fiber sensing part can be excited to generate surface plasma waves, and a sensing target is combined or adsorbed, so that a sensing film corresponding to a target detection object does not need to be coated during follow-up biological sensing, and the cost is reduced. And the manufacturing cost of the optical fiber biosensor based on the LSPR effect is further reduced.

The invention discloses a plasma processing device and a working method thereof, and the plasma processing device comprises a vacuum reaction chamber which is internally provided with a lower electrode assembly; the direct current power supply and the first bias radio frequency power supply are electrically connected with the lower electrode assembly; the controller is used for controlling the direct-current power supply to provide a first pulse voltage for the lower electrode assembly, controlling the first bias radio frequency power supply to provide a first bias radio frequency voltage for the lower electrode assembly, and adjusting the phase difference between the first pulse voltage and the first bias radio frequency voltage to change the voltage of a plasma sheath layer on the surface of the substrate, the frequency of the first pulse voltage is consistent with the frequency of the first bias radio frequency voltage. The device has the advantages that the direct-current power supply, the first bias radio-frequency power supply and the controller are combined, the frequencies of voltages output by the direct-current power supply, the first bias radio-frequency power supply and the controller are controlled to be consistent through the controller, richer bias voltage waveforms are obtained under the condition that clutters are not introduced, and then accurate control over the substrate etching process is achieved.

An embodiment of the disclosure provides a plasma coating method of a nanovesicle surface and a plasma jet device for plasma coating of a nanovesicle surface. The plasma coating method of a nanovesicle surface according to an embodiment of the disclosure may be provided as a simple method for changing the surface charge of a nanovesicle from negative to neutral by utilizing the characteristic that when a neutral object meets a negatively charged object, electrons of the neutral object repel electrons of the negatively charged object and the negatively charged object becomes positively charged.

The invention relates to the technical field of detection, and discloses an MCP image enhancement high-sensitivity detection system, which comprises a photoelectric cathode, which adopts a multi-quantum well structure and a surface plasma enhancement technology, is used for converting incident photons into primary electrons, and comprises a quantum well formed by gallium arsenide and gallium aluminum arsenide; a microchannel plate for amplifying primary electrons generated from the photocathode; the microchannel plate is coated with a superconducting thin film so as to reduce noise and improve electronic gain; various types of sensors include optical sensors, thermal imaging sensors, acoustic sensors, and chemical sensors. By adopting a multi-quantum well structure and a surface plasma enhanced photoelectric cathode, the spectral response and photoelectric conversion efficiency are remarkably improved, and the sensitivity and response speed of the system to non-specific wavelengths are enhanced. Meanwhile, the microchannel plate coated with the superconducting thin film effectively reduces the noise level, improves the signal definition and the image quality, and solves the high-gain limitation of a traditional system.

The invention discloses a laminated light-emitting device, which comprises a first light-emitting function part and a second light-emitting function part, and is characterized in that the thickness of the second light-emitting function part is smaller than or equal to that of the first light-emitting function part; the reduction effect of the first light-emitting function part on the surface plasmon effect is better than the reduction effect of the second light-emitting function part on the surface plasmon effect, so that the improvement of the light extraction efficiency of the light-emitting material layer close to the first electrode is better than the improvement of the light extraction efficiency of the light-emitting material layer far away from the first electrode. Therefore, the light extraction efficiency of the two light-emitting material layers can be well balanced, the light extraction efficiency of different light-emitting material layers tends to be consistent, the light extraction efficiency of the whole laminated light-emitting device is improved, and the power efficiency of the laminated light-emitting device is further improved. The invention further provides a display panel comprising the laminated light-emitting device and a display device comprising the display panel.

According to the band-pass filter provided by the invention, a first metal layer of a quarter-mode substrate integrated waveguide comprises a circular quarter-mode waveguide pattern which is used for forming artificial surface plasmon polaritons; the first surface of the dielectric substrate is also provided with an input structure and an output structure which are symmetrically arranged, and a first transition structure and a second transition structure which are symmetrically arranged, and the first transition structure is connected between the input structure and the circular quarter-mode waveguide pattern. The first transition structure is connected between the input structure and the circular quarter-mode waveguide pattern to enable smooth transition between the input structure and the circular quarter-mode waveguide pattern, and the second transition structure is connected between the output structure and the circular quarter-mode waveguide pattern to enable smooth transition between the input structure and the circular quarter-mode waveguide pattern. And the first transition structure and the second transition structure are matched with the artificial surface plasmon polaritons. The SSPP band-pass filter is realized in the quarter-mode substrate integrated waveguide, and has the advantages of ultra-wide stop band, easy integration, compact structure and low cost.

The invention discloses a high-speed photoelectric detector based on a mixed surface plasma slit waveguide and a preparation method of the high-speed photoelectric detector, and belongs to the technical field of integrated optoelectronic devices. Comprising a substrate, a mixed surface plasma slit waveguide, metal gates on the two sides, a Van der Waals heterostructure and metal source and drain electrodes on the two sides. The Van der Waals heterojunction is composed of an upper hexagonal boron nitride layer, a lower hexagonal boron nitride layer and a middle two-dimensional material. According to the invention, the hexagonal boron nitride is used for packaging the two-dimensional material, so that the carrier mobility of the two-dimensional material can be improved, and the photoelectric response of the detector is enhanced; according to the invention, the distance between the metal gate and the optical waveguide is shortened, a transverse electric mode transmitted in the waveguide is regulated and controlled, a hybrid surface plasma slit mode with a strong local area is formed, the interaction between an optical field and a two-dimensional material layer is enhanced, and the responsivity of the detector is remarkably improved; the Fermi level of the two-dimensional material can be dynamically regulated and controlled by introducing the grid bias voltage, the photo-generated current separation efficiency is enhanced, and the responsivity and the signal-to-noise ratio of the detector can be improved.

The invention provides a surface plasma imaging method and a surface plasma imaging device, which are used for imaging surface plasma signals caused by interaction of biomolecules. More specifically, the invention provides a method and a device capable of imaging a surface plasmon resonance mode in a frequency domain through tiny change by comparing the light intensity in two sections of surface plasmon frequency domains.

The present invention relates to organic light emitting devices. A device structure is provided that includes one or more plasma OLEDs and zero or more non-plasma OLEDs. Each plasma OLED includes an enhancement layer that includes a plasma material that exhibits a surface plasmon resonance in a non-radiative mode that non-radiatively couples with an organic emissive material and transfers excited-state energy from the emissive material to a surface plasmon polariton in the plasma OLED.

The invention discloses an on-chip spectrum sensing structure, a pixel unit and a preparation method and application thereof. The on-chip spectrum sensing structure comprises a metal layer, a dielectric layer and a detector, nano-pore channels are formed in the metal layer and the dielectric layer, and the nano-pore channels extend into the dielectric layer from the surface of the metal layer; near-infrared light forms surface plasmon resonance at the interface of the metal layer and the dielectric layer in the nanopore channel, so that part of near-infrared light in a selected narrow wavelength range is transmitted to the detector, and a corresponding electric signal is formed. According to the on-chip spectrum sensing structure provided by the invention, near-infrared broadband calculation spectrum sensing with high spectral fidelity can be realized, radiation and ohmic loss are effectively inhibited by a nonlinear parameterized design framework, and high transmission efficiency is ensured; the multi-channel super-pixel system structure generated by the method realizes simultaneous point spectrum and snapshot hyperspectral imaging, and shows the potential of the compact platform for field deployment and chip spectrum sensing application.

The invention discloses a split-band synthetic electromagnetic wave coupling device based on Rydberg atoms. The split-band synthetic electromagnetic wave coupling device comprises an energy collecting and processing case, a millimeter wave local oscillator source, a coaxial switch matrix, a surface plasma transmission line, a microwave local oscillator source, a laser generator and a photoelectric detector. The energy collecting and processing case comprises a plurality of frequency band antennas, a waveguide magic T, a waveguide adapter, a waveguide probe and a parabolic mirror, the frequency band antennas are connected with the corresponding coaxial switch matrix and the waveguide magic T after receiving incoming wave signals, and the coaxial switch matrix is connected to a plasma transmission line channel of the surface plasma transmission line; and the waveguide magic T is connected to the waveguide adapter, and is irradiated to the atomic gas chamber above the plasma transmission line channel through the waveguide probe and the parabolic reflector. And the laser generator irradiates the atomic gas chamber and then outputs to the photoelectric detector for detection. According to the invention, the problem of integration of a plurality of coupling channels is effectively solved, and meanwhile, efficient coupling of local oscillator signals, received incoming wave signals and the atomic gas chamber is met.

The invention discloses a display panel and a display device. The display panel comprises a light-emitting layer, a cathode layer and a dielectric layer. The light-emitting layer comprises a pixel area and a non-pixel area located on the side edge of the pixel area. The cathode layer is arranged on one side of the light-emitting layer; the cathode layer comprises a first sub-cathode layer corresponding to the pixel region and a second sub-cathode layer corresponding to the non-pixel region; the dielectric layer is arranged on one side, deviating from the light-emitting layer, of the cathode layer; wherein a plurality of isolation structures are formed on the surface, deviating from the light-emitting layer, of the second sub-cathode layer so as to prevent light emitted by the pixel region from being transmitted to the edge of the display panel along the surface of the cathode layer. The plurality of isolation structures are formed on the surface, deviating from the light-emitting layer, of the second sub-cathode layer, the surface plasma effect formed on the interface between the cathode layer and the dielectric layer is interfered, light emitted by the pixel area is prevented from spreading to the edge of the display panel along the surface of the cathode layer, and the edge light leakage phenomenon is improved.

The invention provides a hollow-core anti-resonance optical fiber temperature sensor based on surface plasma resonance. The hollow-core anti-resonance optical fiber temperature sensor comprises a cladding region and a fiber core region, the cladding area comprises four cylindrical nested elliptical quartz tubes and two quartz tubes which are uniformly arranged, the quartz tubes intersect with the tube wall of the optical fiber, the inner radius of each cylindrical nested elliptical quartz tube is r1, the inner minor semi-axis of each nested elliptical quartz tube is a, and the tube wall thickness of each cylindrical nested elliptical quartz tube is t1; the inner radius of the quartz tube intersected with the tube wall of the optical fiber is r2, and the thickness of the tube wall is t2; the sensor adopts an anti-resonance optical fiber structure, and a cladding area is formed by uniformly arranging four cylindrical nested elliptical quartz tubes and two quartz tubes intersected with the tube wall of the optical fiber. The two quartz tubes in the x direction are filled with gold threads, and other cladding tube holes are filled with ethanol liquid; the fiber core area is an area enclosed by the six quartz tubes and is filled with ethanol liquid. According to the invention, a surface plasma effect sensing mechanism is realized by filling metal, so that temperature sensing is realized. The detection temperature range of the sensor is-50 DEG C to 50 DEG C, and the sensitivity is 3.16 nm / DEG C. The sensor has the advantages of simple structure and high sensitivity, and has wide application prospects in the fields of biomedicine, environmental science, aerospace and the like.

The invention discloses a high-luminous-efficiency diffraction optical waveguide, which belongs to the technical field of diffraction optical waveguides and comprises a substrate, a grating and a film unit, the grating is arranged on the substrate, the film unit covers the ridge top and the groove bottom of the grating and is used for forming a surface plasmon effect, and the film unit comprises at least two metal layers and at least one dielectric layer which are alternately stacked. And the outermost layers are metal layers. According to the diffraction optical waveguide, the optical transmission efficiency of the diffraction optical waveguide can be greatly improved, and power consumption can be reduced.

The embodiment of the invention relates to the technical field of photoelectric detection, in particular to a laser-induced periodic structure enhanced photoelectric detector and a preparation method thereof, and the photoelectric detector comprises a substrate layer, a grating template layer, a bottom surface metal layer, a semiconductor layer and a surface metal layer from bottom to top; injection light is injected into the surface metal layer, surface plasmon polariton resonance is excited due to the nano grating structure of the surface metal layer, the absorption efficiency of the injection light is improved, and a wrinkle-shaped nano grating structure is arranged among the bottom surface metal layer, the semiconductor layer and the surface metal layer; the bottom surface metal layer, the semiconductor layer and the surface metal layer form a Fabry-Perot cavity structure, and after injected light enters a cavity, standing waves are formed in the cavity and interact with a material to generate an intra-cavity resonance enhancement effect; by adjusting the period of the grating structure of the grating template layer and the thickness of the semiconductor layer, multi-wavelength selection of the photoelectric detector can be realized. The photoelectric detector is simple and convenient to prepare, can be flexibly regulated and controlled and is suitable for batch production.

The present invention discloses an SPR sensor based on a defect disk coupled nanorod structure, comprising a silicon dioxide substrate and at least one metal nanounit arranged on the silicon dioxide substrate; each metal nanounit is composed of a metal nanodefect disk and a metal nanorod; there is a gap between the metal nanodefect disk and the metal nanorod; the metal nanodefect disk is a circle with a rectangular notch on the edge; the metal nanorod is a rectangle; the rectangular notch on the metal nanodefect disk faces the direction of the metal nanorod, and the center line of the wide side of the rectangular notch is perpendicular to the center line of the wide side of the metal nanorod. The present invention generates a dipole through the metal nanodefect disk and the metal nanorod, and the two dipoles are coupled to each other to generate a surface plasma resonance peak. By changing the geometric parameters of the metal nanounit, the resonance intensity and the resonance wavelength position of the surface plasma resonance can be regulated, and high sensitivity can be obtained.

The invention discloses a surface plasma-based reverse Cherenkov medium laser accelerator, which is characterized in that a silicon medium prism, a first silver metal film, a first silicon medium film, a high-vacuum particle channel, a second silicon medium film, a second silver metal film and a silicon medium substrate are sequentially arranged from top to bottom to form a seven-layer metal-medium alternating structure; single-side incident laser excites surface plasma to realize particle acceleration. Incident electromagnetic waves are subjected to total internal reflection at the bevel edge of the prism, evanescent waves are generated, the longitudinal wave vector component of the evanescent waves meets the excitation condition of SPPs at the medium-metal layer interface, then the SPPs are excited on the metal-medium interface, and a remarkably enhanced near field is generated. The enhanced electric field forms longitudinal accelerating fields which are symmetrically distributed in the high-vacuum particle channel, and energy gain is continuously provided for electrons; meanwhile, the transverse electric field component is minimized in the central area of the channel due to mutual offset of upper and lower components, so that particle deflection is effectively inhibited.

An surface plasmon microscope includes a light source, a polarization element, a beam splitter, an objective lens, a photodetector, an operation unit, and the like. An illumination optical system including lenses, the polarization element, the beam splitter, and the objective lens guides light output from the light source to converge the light by the objective lens, and illuminates a metal thin film with the light from a lower surface side of a transparent substrate and focuses the light on the metal thin film to generate a surface plasmon resonance. A detection optical system including the objective lens, the beam splitter, and a lens guides reflected light generated by the focused illumination on the metal thin film to the photodetector. The operation unit acquires refractive index information of a sample disposed in contact with the metal thin film based on the reflected light intensity detected by the photodetector.

A spherical designer electromagnetic surface plasmon open resonator is provided. The open resonator includes a resonator inner core and a resonator outer shell. The resonator inner core is located in an inner center of the resonator outer shell, and the resonator inner core and the resonator outer shell are coaxial. The disclosure provides a device that implements the superscattering function for incident waves in all incident directions and in all polarization directions, and a spherical open resonator is implemented. The scattering cross section of the disclosure can be more than five times greater than that of a metal sphere of the same size, and the operating frequency can be flexibly designed. By utilizing the characteristic that the scattering cross section of the spherical designer electromagnetic surface plasmon resonator is much greater than its own geometric cross section, the electromagnetic super-scattering device can be implemented.

This application relates to surface plasmon pumped light emitting devices. Apparatus and techniques are provided for implementing an OLED device including one or more plasmonic materials exhibiting surface plasmon resonance and one or more outcoupling layers.

The invention relates to the technical field of MOF energy storage, in particular to a preparation method of a photoresponse Cu-coated Fe heterogeneous MOF energy storage material, the photoresponse Cu-coated Fe heterogeneous MOF energy storage material and application of the photoresponse Cu-coated Fe heterogeneous MOF energy storage material.The preparation method comprises the following steps that (1) an inner core copper-based MOF is prepared, (2) a core-shell structure Cu-coated Fe-MOF is prepared, (3) surface plasma treatment is conducted, and the photoresponse Cu-coated Fe heterogeneous MOF energy storage material is obtained; and an efficient electron transmission channel is constructed by utilizing the interaction of abundant d-track electrons and a strong pi-d track. And secondly, MIL-101 (Fe) is selected as a shell, and 2, 2 '-bipyridine-5, 5'-dicarboxylic acid is introduced as a photosensitive ligand, so that the photoresponse performance is remarkably enhanced.

The invention provides an all-dielectric grating quasi-BIC up-conversion luminescence enhancement structure and application thereof. The all-dielectric grating quasi-BIC up-conversion luminescence enhancement structure comprises a substrate; wherein a plurality of silicon nitride gratings are arranged on the upper surface of the substrate at equal intervals, interval grooves are formed between the adjacent silicon nitride gratings, and conversion nanoparticles are arranged in the interval grooves. The in-plane symmetry is destroyed by introducing perturbation, so that SP-BIC can be converted into qBIC, a local electric field in a grating gap is remarkably enhanced, the up-conversion nanoparticles are arranged in the grating gap, the up-conversion emission intensity is enhanced, and compared with traditional surface plasma up-conversion enhancement, the theoretical luminescence enhancement factor reaches 1.58 * 10 < 15 >.