60 results about "Surface plasmon" patented technology

The invention provides a high-stability single-mode semiconductor laser based on dynamic wavefront shaping and a control system, and relates to the technical field of semiconductor lasers, comprising a semiconductor laser gain module, a dynamic wavefront shaping module, a single-mode screening module and a laser output module which are optically coupled in sequence, wherein the semiconductor laser gain module is composed of a quantum well structure gain chip, a distributed feedback grating and a surface plasma structure are integrated on the surface of an active area of the gain chip, and the distributed feedback grating and the surface plasma structure are combined on the surface of the active area through a surface etching process. According to the invention, through the dynamic wavefront shaping module and the multi-parameter closed-loop control system, real-time adaptive regulation and control of the whole laser output process are realized. According to the system, wavefront distortion can be rapidly detected and compensated in a complex disturbance environment, and response delay and manual intervention of traditional static correction are remarkably reduced.

The invention discloses a plasma processing device and a working method thereof, and the plasma processing device comprises a vacuum reaction chamber which is internally provided with a lower electrode assembly; the direct current power supply and the first bias radio frequency power supply are electrically connected with the lower electrode assembly; the controller is used for controlling the direct-current power supply to provide a first pulse voltage for the lower electrode assembly, controlling the first bias radio frequency power supply to provide a first bias radio frequency voltage for the lower electrode assembly, and adjusting the phase difference between the first pulse voltage and the first bias radio frequency voltage to change the voltage of a plasma sheath layer on the surface of the substrate, the frequency of the first pulse voltage is consistent with the frequency of the first bias radio frequency voltage. The device has the advantages that the direct-current power supply, the first bias radio-frequency power supply and the controller are combined, the frequencies of voltages output by the direct-current power supply, the first bias radio-frequency power supply and the controller are controlled to be consistent through the controller, richer bias voltage waveforms are obtained under the condition that clutters are not introduced, and then accurate control over the substrate etching process is achieved.

The invention discloses an on-chip spectrum sensing structure, a pixel unit and a preparation method and application thereof. The on-chip spectrum sensing structure comprises a metal layer, a dielectric layer and a detector, nano-pore channels are formed in the metal layer and the dielectric layer, and the nano-pore channels extend into the dielectric layer from the surface of the metal layer; near-infrared light forms surface plasmon resonance at the interface of the metal layer and the dielectric layer in the nanopore channel, so that part of near-infrared light in a selected narrow wavelength range is transmitted to the detector, and a corresponding electric signal is formed. According to the on-chip spectrum sensing structure provided by the invention, near-infrared broadband calculation spectrum sensing with high spectral fidelity can be realized, radiation and ohmic loss are effectively inhibited by a nonlinear parameterized design framework, and high transmission efficiency is ensured; the multi-channel super-pixel system structure generated by the method realizes simultaneous point spectrum and snapshot hyperspectral imaging, and shows the potential of the compact platform for field deployment and chip spectrum sensing application.

The invention discloses a high-luminous-efficiency diffraction optical waveguide, which belongs to the technical field of diffraction optical waveguides and comprises a substrate, a grating and a film unit, the grating is arranged on the substrate, the film unit covers the ridge top and the groove bottom of the grating and is used for forming a surface plasmon effect, and the film unit comprises at least two metal layers and at least one dielectric layer which are alternately stacked. And the outermost layers are metal layers. According to the diffraction optical waveguide, the optical transmission efficiency of the diffraction optical waveguide can be greatly improved, and power consumption can be reduced.

A spherical designer electromagnetic surface plasmon open resonator is provided. The open resonator includes a resonator inner core and a resonator outer shell. The resonator inner core is located in an inner center of the resonator outer shell, and the resonator inner core and the resonator outer shell are coaxial. The disclosure provides a device that implements the superscattering function for incident waves in all incident directions and in all polarization directions, and a spherical open resonator is implemented. The scattering cross section of the disclosure can be more than five times greater than that of a metal sphere of the same size, and the operating frequency can be flexibly designed. By utilizing the characteristic that the scattering cross section of the spherical designer electromagnetic surface plasmon resonator is much greater than its own geometric cross section, the electromagnetic super-scattering device can be implemented.

The invention provides an all-dielectric grating quasi-BIC up-conversion luminescence enhancement structure and application thereof. The all-dielectric grating quasi-BIC up-conversion luminescence enhancement structure comprises a substrate; wherein a plurality of silicon nitride gratings are arranged on the upper surface of the substrate at equal intervals, interval grooves are formed between the adjacent silicon nitride gratings, and conversion nanoparticles are arranged in the interval grooves. The in-plane symmetry is destroyed by introducing perturbation, so that SP-BIC can be converted into qBIC, a local electric field in a grating gap is remarkably enhanced, the up-conversion nanoparticles are arranged in the grating gap, the up-conversion emission intensity is enhanced, and compared with traditional surface plasma up-conversion enhancement, the theoretical luminescence enhancement factor reaches 1.58 * 10 < 15 >.

The application discloses a kind of low reflection high adhesive photo surface treatment method, successively contain photo surface plasma treatment, UV film solution coating solidification, film outer surface plasma treatment etc., core is in UV film solution adding silane coupling agent type passivator;Photo surface uses atmospheric pressure plasma treatment, film outer surface uses low temperature plasma treatment, by controlling plasma treatment power, speed, working gas etc., realize the micro-nano rough structure construction of photo and film outer surface.The application utilizes double plasma treatment to realize physical roughening and reduce reflection, realizes the stability and chemical coupling of plasma activated surface by passivator, greatly improves the bonding strength of photo and film layer, and finally prepared film encapsulation photo film layer transmittance is greater than or equal to 90%, 60 degree glossiness is 10~30GU, while realizing low reflection effect without losing transparency, also has excellent wear resistance, bending performance.

The present application relates to a kind of multi-wavelength surface plasmon hot electron photodetector and its preparation method and application, its structure includes substrate, two-dimensional material layer, vanadium dioxide micro-nano structure, graphene layer and top driving electrode.The detector realized by the present application not only has the characteristics such as wide spectrum, real-time tuning, room temperature operation and wavelength selectivity, and the detection performance is significantly improved.

The application provides a surface plasmon photolithography device and a preparation method for improving imaging aspect ratio, which can be applied to the fields of integrated circuit manufacturing and photolithography technology. The surface plasmon photolithography device comprises a metal reflection layer, an optical metamaterial photoresist layer and a mask layer which are sequentially stacked from bottom to top; wherein the optical metamaterial photoresist layer comprises a photoresist and a metal nanoparticle array embedded in the photoresist, the metal nanoparticle array comprises at least one metal nanoparticle layer, and the metal nanoparticle layer is composed of metal nanoparticles arranged periodically; the metal nanoparticle layer is arranged in parallel to the mask layer, wherein when the metal nanoparticle layer comprises a plurality of metal nanoparticle layers, the different metal nanoparticle layers are located in different planes. The application further provides a preparation method of the surface plasmon photolithography device for improving imaging aspect ratio.

The invention discloses a Ce-doped Co-MOF derived CuO composite oxide catalyst and a preparation method thereof, and belongs to the technical field of catalytic materials. The preparation method comprises the following steps that S1, rare earth waste residues containing Ce elements and Co elements are obtained and treated, and a cerium salt solution and a cobalt salt solution are obtained; s2, the cerium salt solution and the cobalt salt solution are mixed with an organic ligand, and a Ce-Co-MOF precursor is prepared; s3, carrying out calcining and annealing treatment to obtain a Ce-Co-O porous composite oxide carrier; s4, preparing a copper salt solution, impregnating the Ce-Co-O porous composite oxide carrier with the copper salt solution, and then performing drying and calcining treatment to obtain a CuO-coated Ce-Co-O composite oxide; and S5, carrying out surface plasma activation treatment to obtain the Ce-doped Co-MOF derived CuO composite oxide catalyst. According to the invention, high-valued utilization of rare earth resources and precise structural regulation and control of catalytic materials can be realized, and the prepared catalyst can show excellent activity and stability in low-temperature CO oxidation reaction.

This invention provides an adjustable notch filter based on a ridge waveguide SSPP structure, relating to the field of wireless communication technology. By introducing independent planar adjustable notch units into the ridge waveguide SSPP structure, the notch frequency can be continuously adjusted without compromising the surface wave propagation characteristics and frequency-selective transmission response of the SSPP. The SSPP structure is formed by periodically etching multiple grooves along the propagation direction on a metal ridge, with continuous portions of the metal ridge maintained between adjacent grooves. These periodic grooves modulate the dispersion characteristics of the electromagnetic field within the ridge waveguide, enabling the ridge waveguide to support equivalent surface plasmon wave propagation, thereby forming a stable frequency-selective transmission response within a predetermined frequency range. The planar adjustable notch unit constructs a main transmission path and a secondary transmission path, utilizing the destructive interference of the two paths at a specific frequency to create a notch effect. Simultaneously, by changing the equivalent capacitance value of the varactor diode, the notch frequency can be continuously adjusted within the predetermined frequency range.

This invention discloses a method for improving the high-energy radiation detection performance of powdered scintillators, comprising the following steps: pulverizing and grinding scintillator material to obtain scintillator particles; completely or partially coating the surface of the scintillator particles with a metal layer having a surface plasmon effect; and then mixing with an organic polymer material to form a scintillator sheet. This invention rationally coats or partially covers the surface of the scintillator particles with a metal material. Based on the plasmon effect of the metal material, it can effectively increase the light yield of the scintillator and reduce its decay lifetime, thereby improving the scintillator's high-energy radiation detection performance. Moreover, the entire operation process is simple, convenient, and easy to implement, applicable to scintillator materials of various powder shapes, and has a wide range of applications, such as nuclear medicine imaging, security inspection, industrial detection, and high-energy physics.

The invention provides an etching enhancement method based on surface plasma photoetching. The etching enhancement method comprises the following steps: sequentially forming a photoresist film layer and a metal enhancement layer which are stacked on a substrate; after surface plasma photoetching is carried out on the photoresist film layer, the metal enhancement layer is removed, and a photoetching pattern is formed in the photoresist film layer after development; performing pan exposure and hard masking on the photoresist film layer on which the photoetching pattern is formed; etching is carried out based on the photoresist film layer after hard masking, and a photoetching pattern is transmitted to the substrate; and removing the residual photoresist film layer after the hard masking to obtain the substrate containing the photoetching pattern.

The present disclosure relates to the field of semiconductor technology, and more particularly to a semiconductor process chamber and semiconductor process equipment. The semiconductor process chamber includes a chamber body, a carrier, a magnetron assembly, a bias magnetic field assembly, and a magnetic shielding member. The bias magnetic field assembly is located inside the chamber body and surrounds the carrier. The magnetic shielding member is located above the bias magnetic field assembly and is configured to guide the bias magnetic field above the bias magnetic field assembly, thereby reducing the magnetic field coupling of the bias magnetic field assembly and the magnetron assembly. The semiconductor process equipment includes the above semiconductor process chamber. The semiconductor process chamber and semiconductor process equipment can reduce or even avoid the magnetic field coupling superposition of the bias magnetic field assembly and the magnetron assembly, ensuring the uniformity of plasma concentration and sputtering rate on the target surface as much as possible, reducing or even avoiding abnormal fluctuations in voltage applied to the target, and ensuring the uniformity of the corrosion depth on the target surface and the uniformity of the magnetic thin film deposited on the surface of wafer.

The application discloses a Ce-doped Co-MOF derived CuO composite oxide catalyst and a preparation method thereof, and belongs to the technical field of catalytic materials. The preparation method comprises the following steps: S1, obtaining rare earth waste residue containing Ce elements and Co elements, and processing the rare earth waste residue to obtain a cerium salt solution and a cobalt salt solution; S2, mixing the cerium salt solution and the cobalt salt solution with an organic ligand to prepare a Ce-Co-MOF precursor; S3, performing calcination and annealing treatment to obtain a Ce-Co-O porous composite oxide carrier; S4, preparing a copper salt solution, impregnating the Ce-Co-O porous composite oxide carrier with the copper salt solution, and then performing drying and calcination treatment to obtain a CuO@Ce-Co-O composite oxide; and S5, performing surface plasmon activation treatment to obtain the Ce-doped Co-MOF derived CuO composite oxide catalyst. The application can realize high-value utilization of rare earth resources and precise structure regulation of catalytic materials, and the prepared catalyst can exhibit excellent activity and stability in a low-temperature CO oxidation reaction.

Provided are a method and an apparatus for determining a process window and a computer device. A surface plasmon photolithography model corresponding to a surface plasmon photolithography structure with an air layer is established. A simulation is performed based on the surface plasmon photolithography model to determine a photoresist pattern formed via photolithography and a critical dimension in the photoresist pattern. A thickness of the air layer and / or exposure energy in the surface plasmon photolithography model are adjusted and the simulation is performed based on the surface plasmon photolithography model repeatedly, to obtain multiple correspondences between the exposure energy, the thickness of the air layer, and the critical dimension. Based on the correspondences and a tolerance range allowed for a critical dimension between the photoresist pattern and a pattern of a mask layer corresponding to the photoresist pattern, the process window corresponding to the mask layer is determined.

A terahertz leaky wave antenna based on magnetic surface plasmonic devices, belonging to the field of terahertz device technology, employs a terahertz unidirectional transmission waveguide constructed by sequentially stacking a metal layer, a dielectric layer, and a magnetized semiconductor layer from top to bottom. A subwavelength periodic groove structure is set at the interface between the dielectric layer and the magnetized semiconductor layer to introduce the unidirectional transmission mode into the optical cone, forming a fast-wave mode. Narrow slits with the same period as the grooves are formed in the metal layer as a leaky wave structure, enabling efficient radiation of the waveguide mode into free space. By applying a static magnetic field to the magnetized semiconductor layer, non-reciprocal unidirectional transmission is achieved and backscattering is suppressed. The antenna can achieve wide-angle beam scanning by changing the operating frequency or the applied magnetic field strength. This invention also provides a previously summarized optimization method for terahertz leaky wave antennas based on magnetic surface plasmonic devices, by periodically adjusting the slit width and dielectric layer thickness. This invention features a compact structure, high integration, and combines unidirectional transmission, efficient radiation, and beam control capabilities.

This application discloses a method and apparatus for manufacturing three-dimensional micro / nano structures based on a surface plasmon grayscale lithography system, relating to the field of semiconductor manufacturing. The method includes: acquiring the spatial distribution characteristics of the field intensity at the opening of a bow-shaped nanopore in the surface plasmon grayscale lithography system; determining the correspondence between the spatial distribution characteristics and the gap size of the bow-shaped nanopore based on the spatial distribution characteristics; adjusting the exposure dose of the surface plasmon grayscale lithography system to grayscale based on the correspondence between the spatial distribution characteristics and the gap size to determine the grayscale exposure input pattern corresponding to the target three-dimensional micro / nano structure; inputting the grayscale exposure input pattern into the lithography imaging model and photoresist imaging model of the surface plasmon grayscale lithography system for exposure processing to determine the pattern quality parameters corresponding to the exposed pattern. This method can greatly improve the exposure quality of the three-dimensional micro / nano structure and has significant practical applicability.

This invention provides a method for preparing and applying a long-lasting photocatalytic antifouling coating material, belonging to the field of marine antifouling coating technology. This invention uses an improved wet chemical reduction method to prepare an Ag@CuGaO heterojunction photocatalytic antifouling agent. This material is a nanocubic structure of CuGaO modified with Ag nanoparticles, with a silver loading of 0.5~10wt%. It combines the small size effect of Ga doping with the surface plasmon properties of Ag, which can broaden the light absorption range and improve carrier separation efficiency. 1~5 parts by weight of this antifouling agent are compounded with 100 parts by weight of organosilicon resin, and an organosilicon antifouling coating is prepared after substrate pretreatment, ultrasonic dispersion, curing and degassing, and spin coating curing. The coating of this invention achieves integrated antifouling and antibacterial properties, with an immediate bactericidal rate of 99% against Staphylococcus aureus and Pseudomonas aeruginosa, and an antibacterial rate of >90% after 60 days in a simulated marine environment. It effectively solves the problems of photocorrosion, short antifouling cycle, and poor mechanical properties of traditional photocatalytic materials, and is suitable for preventing biofouling on metal surfaces of marine facilities. The process is green and economical.

The invention discloses a continuous color-changing intelligent energy-saving window prepared through laser-induced forward transfer, which comprises a first matrix layer, a composite functional layer and a second matrix layer which are sequentially stacked, and the composite functional layer comprises a three-dimensional surface plasmon structure layer and a thermochromic liquid crystal layer, the three-dimensional surface plasmon structure layer is prepared through a laser-induced forward transfer process, and a patterned three-dimensional micro-nano structure is formed on the first substrate layer; the thermochromic liquid crystal layer comprises liquid crystals and a chiral agent, and the reflection wavelength of the thermochromic liquid crystal layer is continuously adjustable in the whole visible light wave band along with temperature changes. Energy saving is achieved through strong absorption of the three-dimensional surface plasmon structure layer on visible light and infrared bands in ambient light, and the photothermal effect of the three-dimensional surface plasmon structure layer is used for driving the thermochromic liquid crystal layer to generate continuous and reversible color changes of full visible light bands; meanwhile, the structural layer is black or dark due to strong absorption, and the brightness of the reflection color of the liquid crystal layer is remarkably enhanced.

This invention relates to a plasma generator based on a dense microporous material catalysis, belonging to the field of low-temperature plasma technology. The plasma generator contains at least one discharge unit, which includes a first electrode, a microporous ceramic medium, and a second electrode. The first electrode is used to connect to a power source, and the second electrode is used for grounding. The microporous ceramic medium is used to adsorb gas molecules and active particles generated by the plasma discharge. This invention generates micro-discharge in a dense microporous medium, which has an extremely high specific surface area. When gas passes through, it is adsorbed onto the surface of the micropores in the medium. Similarly, active substances in the plasma are adsorbed onto the surface of the micropores in the medium. This improves the contact efficiency between short-lived, highly active particles and free radicals in the plasma and the reactants, promotes surface catalytic reactions, and improves the overall efficiency of the device.

The application provides a semiconductor epitaxial structure and a preparation method and application thereof, and belongs to the technical field of semiconductor optoelectronic devices. The semiconductor epitaxial structure based on a double-layer metal micro-nano and graphene composite structure comprises, from bottom to top, a substrate, an AlN layer, an N-AlGaN layer, an AlGaN multi-quantum well, a P-AlGaN electron blocking layer, a P-AlGaN layer, an Al metal micro-nano structure layer, a P-GaN layer, an Al metal periodic structure layer and a graphene layer. The Al metal micro-nano structure layer is prepared below the P-GaN layer, the Al metal periodic structure layer and the graphene layer composite micro-nano structure are prepared above the P-GaN layer, the resonance coupling effect between surface plasmons and excited states is utilized, the problem that the plasmon skin depth is insufficient and cannot match the energy of the excited state is solved, and the light extraction efficiency is greatly enhanced.

This invention discloses a spiral conical metal probe and its method for measuring the refractive index gradient in liquids. The spiral conical metal probe can be excited by white light to form a surface plasmon evanescent wave on the tip of the probe, thereby enabling refractive index detection of the environment. The spiral conical metal probe provided by this invention is simple to prepare and can be mass-produced. Furthermore, this probe can achieve high spatial resolution (micrometer-level) refractive index detection in liquids, exhibiting a highly sensitive detection time response during the convection process of water and ethanol solutions. This makes it suitable for measuring the refractive index gradient in liquids and detecting the refractive index distribution in liquids, showing broad application prospects in the field of liquid refractive index detection.

This invention relates to the field of biomedical detection technology and provides a method for glucose detection based on a hollow antiresonant optical fiber using a polylysine and phenylboronic acid composite membrane. The detection method includes a light source, an optical fiber isolator, a first single-mode optical fiber patch cord, a microfluidic device, a hollow antiresonant optical fiber, a second single-mode optical fiber patch cord, a spectrometer, and a computer. The hollow antiresonant optical fiber is fabricated using a stacked drawing and pressure-assisted splicing process. Gold wires are filled within two selected symmetrical small antiresonant tubes, and the outer wall of these tubes is coated with a polylysine and phenylboronic acid composite membrane. The microfluidic device integrates filtration, temperature control, flow rate control, and pressure monitoring functions. When the polylysine and phenylboronic acid composite membrane specifically binds to glucose molecules in the test solution, the refractive index of the composite membrane is changed, further altering the resonance conditions of surface plasmon resonances, ultimately causing a quantitative shift of the loss peak. The spectrometer collects data, and the computer analyzes the glucose concentration. This method features high sensitivity, strong specificity, good anti-interference, good stability, and integration, providing a new solution for glucose detection and meeting the needs of medical testing and health monitoring.

The invention relates to a long-wavelength photon detection device and detection method based on semiconductor surface plasmon, the detection device comprises a substrate layer, the substrate layer is provided with a sub-wavelength OMSM structure, the sub-wavelength OMSM structure comprises a semiconductor layer, two ends of the semiconductor layer are provided with a left metal electrode and antenna layer and a right metal electrode and antenna layer which are opposite to each other, and the left metal electrode and the antenna layer as well as the right metal electrode and the antenna layer are respectively connected with the pre-amplifier circuit through wires for transmitting detection signals. Compared with the prior art, the sub-wavelength OMSM structure is designed to excite semiconductor surface plasmons (SPP), unbalanced electrons can be induced in a semiconductor in the SPP relaxation process, the unbalanced electrons directionally flow under the driving of an external bias electric field, detectable light current signals are formed, the band gap limitation of the semiconductor can be broken through, and the detection sensitivity is improved. And high-sensitivity detection in a range from millimeter waves to terahertz waves can be realized at room temperature through an antenna structure and an electrode spacing design.

A sensor may include a prism having a first face; a metal first layer covering, via a contact face, the first face; a light source; and a matrix-array detector; the device may include a dielectric second layer on which rests a transistor including a sheet made of a two-dimensional material, intended to form a channel region, a front face of the sheet comprising a specific functionalization via which specific targets are liable to be adsorbed, the specific functionalization being suitable for placing the adsorbed specific targets at a smaller distance Dd below which detection via electrical measurement by means of the specific transistor and via measurement of resonance of surface plasmons is possible.

The invention discloses a method for preparing a lithium-doped silicon-based luminescent material through atomic layer deposition and a structure thereof, and the method comprises the steps: introducing tris (dimethylamino) silane pulse steam into a reaction cavity of atomic layer deposition equipment, enabling the tris (dimethylamino) silane pulse steam to react with uniformly distributed active sites formed on the surface of a substrate, and generating Si-N bonds; the plasma hydrogen reacts with the Si-N bonds to generate Si dangling bonds and Si atoms, so that a Si thin film is obtained through adsorption and deposition on the surface of the substrate, and finally a Si layer is obtained; (2, 2, 6, 6-tetramethyl-3, 5-heptadione) lithium pulse steam is introduced into a reaction cavity of the atomic layer deposition equipment so that the (2, 2, 6, 6-tetramethyl-3, 5-heptadione) lithium pulse steam can be adsorbed with Si dangling bonds on the surface of the Si layer to form an unstable Si-O-Li intermediate, the Si-O-Li intermediate can be adsorbed to the surface of the Si layer, plasma hydrogen reacts with the Si-O-Li intermediate on the surface of the Si layer, and a stable lithium-silicon layer is formed; and completing the doping process of the lithium-doped silicon-based luminescent material to form the lithium-doped silicon-based luminescent material. According to the invention, the precise doping of the lithium element in the silicon at the nanoscale can be realized, and the uniformity of the doping concentration is ensured.

Nanowire-based sensors may include an array of nanowires attached to a substrate. The nanowires may have a cladding and are configured to selectively direct incident light into the substrate to interact with surface plasmons at a metal layer on the surface of the substrate. Nanowire-based sensors may include an array of nanowires coupled to their respective closest neighbors. The nanowires may be arranged in a spiral, a half coil, a full coil in the order of increase radii.

The invention belongs to the technical field of photoelectric detection, and particularly relates to a metasurface integrated semiconductor plasmon millimeter wave detection device and method. The detector adopts a layered stacking structure, comprises a substrate layer, a semiconductor plasmon layer, a metasurface layer and an ohmic contact metal-semiconductor-metal (OMSM) structure, and is optimized in a millimeter wave frequency band. According to the invention, a sub-wavelength periodic micro-nano structure (such as a vertical groove, a parallel groove or a hole array) metasurface layer is prepared on a semiconductor, and the surface electric field intensity is enhanced, so that the excitation efficiency of semiconductor surface plasmons (SPP) is improved, and high-sensitivity and high-responsivity detection of millimeter wave signals is realized. The device has the advantages of working at room temperature, high electromagnetic coupling efficiency, industrial compatibility and the like, and can be widely applied to the fields of communication, radar monitoring, nondestructive material detection and the like.