The present disclosure generally relates to spintronic devices comprising a high oxidation resistive cap layer. The spintronic stack comprises a buffer layer, a topological material (TM) layer comprising YPtBi or BiSb, an interlayer, a ferromagnetic layer, and a cap layer. The cap layer comprises a
high resistance material selected from the group consisting of: (1 ) lrxHfyAlz or lrxZryAlz, where x is between about 40 at. % to about 90 at. %, y is about 0.5 at. % to about 60 at. %, and z is about 0.5 at. % to about 60 at. %; (2) ZrQX or HfQX, where X and Q are each individually selected from the group consisting of: Ru, Co, Cu, Ir, Pt, Ti, Nb, Ni, RuAI, and CoFe; (3) SixAli-xN, TixAh-xN, CrxAli-xN, and ZrxAh-xN, where x is a numeral between 0.005 and 1; and (4) nitrides of Si, Al, Ti, Cr, and Zr.