135results about How to "Increase working frequency" patented technology

The invention belongs to the field of switching chips, and relates to a message processing and transmitting device on a CXL switching chip, which comprises a CXL switching interface unit module, an annular topological network on chip and a CXL management unit module, the CXL switching interface unit module is used for receiving and analyzing messages of two sub-protocols, namely. Cache and. Mem, sent by CXL equipment directly connected to a CXL switching chip, then converting and packaging the messages into a message format conforming to the standard of the network on the circular topology chip, and further transmitting the messages through the network on the circular topology chip; and meanwhile, the CXL switching interface unit module also needs to receive the message from the ring topology network-on-chip, converts and packages the message into a corresponding CXL sub-protocol message format, and then distributes the message to other CXL equipment. The method has the characteristics of high bandwidth, low delay and multi-channel concurrency, and provides an efficient transmission channel for a large amount of memory data access scene; and the method has the advantages of high expandability, friendliness to chip back-end physics and the like.

The invention discloses a high-power all-gallium nitride LED driving power supply circuit which comprises an EMI filtering and rectifying circuit, a GaN active power factor correction circuit, a GaN half-bridge LLC resonant converter circuit and a GaN synchronous rectifying and filtering circuit. The PFC and LLC combined control module integrates a power factor correction function and a resonance circuit frequency regulation function, the GaN active power factor correction circuit is connected with the PFC and LLC combined control module to realize power factor correction, and the GaN half-bridge LLC resonant converter circuit is connected with the PFC and LLC combined control module to realize output power regulation; and a constant-current voltage-limiting feedback circuit for outputting current and voltage detection feedback is arranged between the GaN synchronous rectification filter circuit and the PFC and LLC combined control module. The advantages of high efficiency of the GaN switching tube and high working frequency of the circuit are utilized, so that power loss and heat dissipation requirements are reduced, and the efficiency and power density of the LED power supply are improved. The invention has the advantages of high efficiency, high power density, high reliability and the like.

The invention discloses an extensible silicon-based terahertz radiation array source based on an on-chip micro-convex antenna and a terahertz radiation source. The extensible silicon-based terahertz radiation array source based on the on-chip micro-convex antenna comprises a plurality of array units formed by cross-coupled harmonic oscillators based on the on-chip micro-convex antenna, and the array units are connected to form the extensible silicon-based terahertz radiation array source of an n * n array structure. According to the extensible silicon-based terahertz radiation array source, the on-chip micro-convex antenna radiation structure meets the terahertz frequency and broadband requirements, the extensible silicon-based terahertz radiation array source can be applied to a terahertz radiation source system, and the terahertz radiation source array system which is high in working frequency, high in radiation power and tunable in broadband can be achieved.

The invention discloses a single-pole eight-throw coaxial switch, and belongs to the technical field of microwaves. According to the 67GHz single-pole eight-throw coaxial switch, the 1.85 mm coaxial transmission line and the edge line transmission line are adopted to form a microwave transmission system of the 67GHz single-pole eight-throw coaxial switch, and the 67GHz single-pole eight-throw coaxial switch is realized; a 7-shaped microwave transmission system is adopted, and a single-pole eight-throw coaxial switch with a load is realized on the premise that the size of the coaxial switch is not increased; the transmission reed and the push rod form a push rod assembly, the push rod assembly is limited by a pin on the cover plate, and the friction position of the push rod in the moving process is transferred out of the microwave cavity, so that poor contact caused by transfer to the contact position after redundancy generated by friction is avoided; the push rod assembly is limited by the pin, so that the limiting precision is high; the load of the on-load single-pole eight-throw coaxial switch is realized by adopting a load sheet, and the load sheet has the advantages of simple structure, high working frequency, good standing wave, low cost and the like; and coaxial loading can also be adopted, so that assembly and disassembly are facilitated.

The invention discloses a control method, a control device and a switching power supply, the control method is applied to an N-phase converter, and the control method comprises the following steps: calculating an electrical parameter output by the N-phase converter and a modulation wave required by each phase bridge arm switching tube when a common-mode voltage reaches an expected value through voltage loop and current loop double closed-loop control; adjusting the current modulation wave of each phase of bridge arm switch tube so as to obtain N first modulation waves; calculating a second frequency required by a modulation wave of each phase of bridge arm switch tube when each phase of bridge arm switch tube realizes ZVS by predicting the magnitude of bridge arm side inductive current pulsation in each phase of LCL filter, taking the second frequency as the frequency of a carrier wave, and generating N carrier waves; and comparing the first modulation wave of each phase of bridge arm switch tube with the corresponding carrier wave to obtain a driving signal for controlling the on and off of each phase of bridge arm switch tube. According to the invention, good harmonic performance can be obtained while low common-mode voltage is realized.

An adaptive virtual synchronous machine control method based on deep reinforcement learning belongs to the field of power grid operation control. It establishes a photovoltaic storage grid-connected model containing photovoltaic systems, battery energy storage and variable loads; uses virtual synchronous generator control to achieve complementary photovoltaic output power for the battery energy storage system; in order to solve the problem of microgrid frequency deviation caused by microgrid load power changes, a deep reinforcement learning algorithm is used to control and adjust the virtual inertia and damping coefficient of the virtual synchronous generator; the double deep Q learning algorithm in deep reinforcement learning is used to control the virtual inertia and damping coefficient; a double-layer evaluation network is constructed, combined with a reward function, and after multiple trainings, the adaptive adjustment of the virtual inertia and damping coefficient is achieved. It uses deep reinforcement learning technology to adaptively control the virtual inertia and damping coefficient, suppress the frequency deviation, accelerate the recovery of the system operating frequency, and improve the stability of the system.

The invention relates to a laterally diffused metal oxide semiconductor device and a preparation method thereof. The laterally diffused metal oxide semiconductor device includes: a substrate; the first doped region is arranged in the substrate; the second doped region is arranged in the substrate and is positioned on one side, close to the surface of the substrate, of the first doped region; the first groove is formed in the substrate, is opened from the surface of the substrate and extends to the first doped region so as to expose part of the first doped region; the drain region is arranged in the exposed part of the first doped region; the source region is arranged in the substrate; the grid electrode is arranged on one side, away from the drain region, of the source region; the well region is arranged in the substrate; the well region extends from the surface of the substrate to the first doped region and is adjacent to the second doped region; the well region is located between the gate and the drain region. According to the embodiment of the invention, the Cgd capacitance can be reduced while the withstand voltage of the device is improved, so that the adverse effect on the FOM value is reduced.

The invention discloses a push-pull inverter circuit and a high-frequency power supply device. The circuit comprises an input interface and a voltage transformation module, a first switch module is connected between a first end and a grounding end of a primary side coil, and a control end of the first switch module is used for inputting a first control signal; the second switch module is connected between the second end of the primary side coil and the grounding end, and the control end of the second switch module is used for inputting a second control signal; the resonance network is connected with the primary side coil, the first switch module and the second switch module, and the resonance network is used for adjusting soft switching of the first switch module according to the first control signal; and the second switch module is adjusted to perform soft switching according to the second control signal. According to the push-pull inverter circuit, transient voltage and current peaks in the switching process of the switch module can be reduced, the loss of the push-pull inverter circuit under high frequency is reduced, the switch module can work at low temperature conveniently, the reliability of the circuit is improved, the service life of the circuit is prolonged, the working frequency of the push-pull inverter circuit is improved, and the size of the push-pull inverter circuit is reduced.

The utility model relates to the technical field of grain processing equipment, and discloses a polishing machine which comprises a box body, a feeding port, a discharging port and an impurity discharging port are fixedly installed on the outer side of the box body, a cylinder screen is fixedly installed in the box body, a spiral blade is rotatably installed in the cylinder screen, and a polishing machine body is installed in the box body. A driving assembly used for driving the spiral blades to rotate is arranged on the outer side of the box body, a sliding assembly is arranged at the top end in the box body, an air heater and a brush are arranged on the sliding assembly, and a water spraying assembly used for assisting in grain polishing is arranged in the box body. At present, when a polishing machine works, water is sprayed to rice, dust on the surface is cleaned while the polishing effect is improved, however, after processing is completed, part of rice is stuck to the interior of a roller due to water, subsequent grain polishing is affected to a certain extent, workers need to open the equipment for cleaning, time and labor are wasted, and the work progress is delayed.

The utility model relates to a radiation oscillator, a low-frequency radiation antenna and a multi-band antenna. Wherein the radiation oscillator comprises a radiation structure, and the radiation structure is used for radiating a signal and comprises a radiation arm; and the first decoupling structure is arranged at the radiation arm and comprises a first branch knot and a second branch knot, and the longitudinal axis of the first branch knot and the longitudinal axis of the second branch knot intersect with each other. According to the utility model, the first decoupling structure is arranged in the radiation oscillator, so that the interference current coupled by the newly arranged decoupling structure and the interference current coupled by the radiation structure can be mutually and approximately counteracted, and high-frequency suppression on the radiation arm of the low-frequency oscillator is realized. In this way, the low-frequency radiation oscillator can reduce the interference of other radiation oscillators such as a high-frequency radiation oscillator to the low-frequency radiation oscillator, so that the radiation performance of the radiation oscillator is improved, meanwhile, the interference of the low-frequency radiation oscillator to other radiation oscillators is reduced, and the radiation performance of other radiation oscillators is improved.

The invention discloses a preparation method of a BAW device based on a novel sacrificial layer technology, and the preparation method employs ZnO as the material of a sacrificial layer, employs a diluted hydrochloric acid solution as an etchant solution, can prevent the diluted hydrochloric acid solution from corroding an insulating layer and a dielectric layer while completely corroding ZnO, and obtains a high-performance BAW device. And meanwhile, on-chip integration with other passive devices is realized. According to the invention, ZnO is adopted as the sacrificial layer, and the sacrificial layer has the same wurtzite structure as the piezoelectric layer, so that the sacrificial layer can be used for inducing grain arrangement of the first electrode of the piezoelectric oscillation stack, and preferred orientation growth of the first electrode film is facilitated, so that preferred orientation growth of the piezoelectric layer film is further realized, and the piezoelectric layer film has relatively good piezoelectric performance. According to the invention, SiO2 is used as a passivation protection layer and an insulating layer, so that the function of the passivation protection layer and the insulating layer is achieved, and the function of temperature compensation can be additionally realized at the same time.

The invention discloses a high-density flaky powder magnetic powder core material and a preparation method thereof, and belongs to the field of metal soft magnetic materials.The arrangement of tiny magnetic powder particles is adjusted by introducing a magnetic field rotation orientation link in the forming process of the flaky powder magnetic powder core material, so that all the magnetic powder particles are densely arranged and stacked in parallel; further pressing into a magnetic powder core with a high-density structure; the problem that the high-density flaky magnetic powder filling magnetic powder core is difficult to form is solved, the flaky magnetic powder core prepared through the method has the advantages of being high in magnetic conductivity, high in working frequency, high in saturation magnetization intensity, high in mechanical strength, low in loss and the like, and the method provides a key technology for development of the high-density flaky magnetic powder core.

The invention relates to a three-channel randomization circuit applied to a three-channel interleaved sampling front end, which belongs to the technical field of mixed signal integrated circuits and comprises a pseudo-random signal generation circuit, a three-channel randomization signal generation circuit, a sampling hold circuit and a channel selection circuit. The three-channel randomization signal generation circuit comprises three channel enable signal sub-circuits which correspondingly obtain three channels of channel enable signals and three channels of selection signals according to pseudo-random signals respectively; each channel enable signal sub-circuit selects a pseudo-random signal according to the three channel enable signals to obtain a front enable signal, and controls the level of the channel enable signal output in the next period according to the front enable signal; the three-channel randomization signal generation circuit is controlled through closed-loop logic, input of the three-channel randomization signal generation circuit is provided by pseudo-random signals, control over sampling and selection of sampling holding signals are achieved through the three-channel enable signal sub-circuits, and the linearity of the interleaving type sampling front end is improved.

The present invention provides a packaging structure suitable for a power converter, wherein a first power transistor and a control and drive circuit are integrated into the same chip, which can better realize the high-frequency switching action of the first power transistor, increase the operating frequency of the first power transistor, and reduce the switching loss. The second power transistor is integrated into an independent second chip, and the first chip and the second chip are separated in the packaging structure. The control and drive action of the second power transistor will not interfere with or have other negative effects on the first chip, thereby improving reliability. The first chip and the second chip can be connected through a large-area connection structure, achieving a lower interconnection resistance and improving the large current handling capability.

The application discloses an aeration process and a sewage treatment method, and belongs to the technical field of environmental engineering. The aeration process comprises the following steps: for the state that the adjusting tank is continuously fed with water, adjusting the working condition of an aeration equipment so that the dissolved oxygen concentration of the adjusting tank is controlled within 0.2-0.3 mg / L, and simultaneously carrying out nitrification and denitrification in the adjusting tank; for the state that the adjusting tank is intermittently fed with water or not fed with water, controlling the aeration equipment to be operated in an alternating mode of a third frequency and a fourth frequency, and carrying out denitrification in the adjusting tank. The aeration process disclosed by the application can achieve the purposes of degrading organic pollutants and saving energy by flexibly adjusting the mode of a process fan and controlling the dissolved oxygen interval.

A semiconductor structure and a mask layout, the structure comprising: a substrate comprising a substrate and a plurality of channel structures protruding from the substrate, the channel structures extending along a first direction and being arranged in parallel along a second direction, the first direction being perpendicular to the second direction; the gate structures are located on the substrate and stretch across the channel structures, and the gate structures extend in the second direction and are arranged in parallel in the first direction; the source-drain doping layer is located in the channel structure on the two sides of the gate structure; the source-drain interconnection lines are located between the adjacent gate structures, and the source-drain interconnection lines extend in the second direction, stretch across the source-drain doping layers and are electrically connected with the source-drain doping layers; the partition structure extends in the first direction to penetrate through one or more source-drain interconnection lines and partitions the source-drain interconnection lines located on the two sides of the partition structure in the second direction, and the partition structure is provided with protruding parts which extend in the second direction and penetrate through the source-drain interconnection lines at the partition positions of the source-drain interconnection lines. The working frequency of the semiconductor structure can be improved.

The present invention provides a high-frequency, high-power, and high-flow ultrasonic atomization device. A high-frequency, high-power, and high-flow ultrasonic atomization device comprises a high-frequency ultrasonic transducer, a waveguide horn, and a multi-wavelength ultrasonic atomization disk connected in sequence from top to bottom, wherein the multi-wavelength ultrasonic atomization disk comprises a plurality of wave nodes with different thicknesses and different surface inclination angles with the axis of the multi-wavelength ultrasonic atomization disk, and the plurality of wave nodes are distributed in a ring shape from the center of the multi-wavelength ultrasonic atomization disk to the edge of the atomization disk. The present invention adopts a longitudinal wave transmission method, and in theory, the diameter of the multi-wavelength ultrasonic atomization disk can be increased by adding a plurality of half-wavelength wave nodes, so that the ultrasonic atomization area is multiplied. Under the condition of large-flow liquid input, the production capacity of several times or even ten times that of a conventional ultrasonic atomization device can be obtained. Under the condition of equal flow liquid input, the liquid is vibrated into a thinner film before atomization, and smaller atomized particles can be obtained.

The present invention relates to the field of air cooler control, and in particular to a method for compensating ambient wind and tube bundle temperature by the rotation speed of a direct air-cooling fan, comprising: step S1, establishing a wind direction rectangular coordinate system by an anemometer and wind direction instrument to detect the wind direction and wind speed of the ambient wind; step S2, compensating the initial output power of the fans in the first P rows and the first Q columns on the windward side of an M×N fan array based on the wind direction and wind speed of the ambient wind to obtain the compensated output power; step S3, measuring the tube bundle temperature of the cooling unit of the fan after power compensation in step S2 by a tube bundle temperature monitoring component, calculating and obtaining a temperature correction parameter, and correcting the compensated output power based on the temperature correction parameter to obtain the corrected output power; the present invention compensates the working power of the fan on the windward side, improves the working frequency of the air-cooling fan, and greatly improves the problem of uneven temperature of the tube bundle of the air-cooling unit.

The invention discloses a piezoelectric heterogeneous substrate, a preparation method and a semiconductor device, the piezoelectric heterogeneous substrate comprises a substrate layer, a dielectric layer, a patterned electrode layer and a piezoelectric film layer, the dielectric layer is located between the substrate layer and the piezoelectric film layer, the patterned electrode layer is located in the dielectric layer, and one side of the patterned electrode layer is exposed to the dielectric layer and is electrically connected with the piezoelectric film layer; the piezoelectric thin film layer is provided with a first surface and a second surface which are deviated from each other, the first surface is an original exposed surface of the piezoelectric heterogeneous substrate for forming the piezoelectric thin film layer, the first surface is positioned on one side, deviated from the substrate layer, of the piezoelectric thin film layer, and the second surface is formed by thinning one side, deviated from the original exposed surface, of the piezoelectric wafer substrate. The sacrificial protection structure is adopted to form the piezoelectric thin film layer, a high-temperature process is completed before the patterned electrode layer and the dielectric layer are formed, stress caused by thermal mismatch in the subsequent preparation process is reduced, and the morphology accuracy, reliability, stability and durability of the piezoelectric heterogeneous substrate are improved.

The present invention provides a structure and method for improving the frequency characteristics of a lithium niobate modulator chip on a quartz substrate. The structure includes: a carrier chip; a coplanar waveguide structure with ground arranged on the upper surface of the carrier chip and a coplanar waveguide structure without ground arranged on the upper surface of the modulator chip; a core group interconnection structure respectively arranged at both ends of the coplanar waveguide structure with ground; a metal grounding layer arranged on the lower surface of the carrier chip; a plurality of metal grounding holes respectively arranged on the first grounding area; a plurality of grounding micro-bumps respectively arranged on the first grounding area and / or the second grounding area; input electrodes and output electrodes arranged at both ends of a traveling wave transmission line; input micro-bumps arranged on the input electrode and / or the input end of a broadband transmission line; output micro-bumps arranged on the output electrode and / or the output end of a broadband transmission line; the upper surface of the modulator chip is arranged on the upper surface of the carrier chip. The present invention can improve the grounding continuity, thereby improving the chip operating frequency.

The invention discloses a low dropout linear regulator, a ferroelectric memory and electronic equipment, which can be applied to the technical field of electronic circuits. According to the low dropout linear regulator, the current environment module, the first error amplifier module, the buffer module, the feedback module, the second error amplifier module and the discharge module are arranged in the low dropout linear regulator; after error amplification processing is carried out through a first error amplifier module according to input reference voltage and feedback voltage, first amplified voltage is cached through a cache module, working voltage is provided for a ferroelectric chip through a feedback module according to the first amplified voltage, and feedback voltage is generated. Then the second error amplifier module performs voltage amplification processing according to the input reference voltage and the feedback voltage to obtain a second amplified voltage, and the discharge module adjusts the output voltage of the feedback module according to the second amplified voltage, so that the working frequency of the ferroelectric memory chip is improved, and the size of the whole circuit is reduced.

The utility model discloses a millimeter wave spread spectrum waveguide coaxial converter, and relates to the technical field of waveguide conversion devices. The coaxial converter comprises an upper cavity and a lower cavity, a waveguide cavity is formed between the upper cavity and the lower cavity, and a boss is formed in the waveguide cavity; the converter further comprises a connector, the connector is fixed on the upper cavity, and a coaxial inner conductor of the connector is inserted into a waveguide cavity formed between the upper cavity and the lower cavity. The converter further comprises a tuning screw, the tuning screw is located on the outer side of the lower cavity, the upper side end portion of the tuning screw penetrates through the lower cavity to enter the waveguide cavity, and the upper side end portion of the tuning screw is located between the boss and the lower side end portion of the coaxial inner conductor. The coaxial converter has the advantages of being good in spread spectrum performance, wide in working frequency band and the like.

The invention discloses a Multi-DNN reasoning-oriented mixed precision FPGA (Field Programmable Gate Array) hardware accelerator and a quantification method, and relates to the technical field of neural network accelerators. The multi-DNN reasoning-oriented mixed precision FPGA hardware accelerator comprises a processor, a plurality of calculation core modules, a DDR (Double Data Rate) module and an intermediate data cache module; each computing core module supports one of high, medium and low computing precision, and a computing unit array module in each computing core module consists of computing units for performing three bit width multiply-accumulate operations; the computing unit is realized by different resources in the FPGA; according to the quantization method, weight data of the neural network are quantized by taking a layer as a unit by adopting three bit widths, namely a high bit width, a middle bit width and a low bit width, and intermediate feature map data of a neural network layer are quantized by adopting one bit width. According to the hardware accelerator and the quantification method provided by the invention, the hardware utilization rate, the throughput and the energy efficiency ratio of the accelerator can be improved, the neural network load of mixed precision quantification can be processed in parallel, and the memory access bandwidth and the energy efficiency of Multi-DNN reasoning are optimized.

The invention provides a distance operation circuit and a gray scale compensation method, the distance operation circuit comprises a distance operation module, the distance operation module comprises a first arithmetic unit, a shifter, a second arithmetic unit, a third adder and a register; one input end of the first arithmetic unit inputs coordinates of a target pixel point in the current backlight partition in the target direction, the other input end of the first arithmetic unit inputs the distance between the current backlight partition and the target backlight partition in the target direction, the first arithmetic unit carries out addition or subtraction operation, and the shifter is connected with the output end of the first arithmetic unit. The shifting module is used for shifting the first distance value; one input end of the second arithmetic unit is connected with the output end of the shifter, the other input end of the second arithmetic unit is connected with the first signal, and the second arithmetic unit is used for carrying out addition or subtraction operation on data of the two input ends; one input end of the third adder is connected with the output end of the register, the other input end of the third adder is connected with the output end of the second arithmetic unit, and the output end of the third adder is connected with the input end of the register.

The embodiment of the present invention discloses a resonant device and an acoustic filter. The resonant device includes a wafer substrate, a piezoelectric layer and an interdigital electrode layer; the piezoelectric layer is located on one side of the wafer substrate, the piezoelectric layer includes a piezoelectric single crystal material, and the piezoelectric single crystal material includes a first crystal axis, a second crystal axis and a third crystal axis that are perpendicular to each other; the direction of the electric field generated by the interdigital electrode layer in the piezoelectric layer is the device direction; wherein the first crystal axis is perpendicular to the wafer substrate, and the angle between the device direction and the second crystal axis is angle A1, ‑30°≤A1≤10°; or, the first crystal axis is perpendicular to the wafer substrate, and the angle between the device direction and the second crystal axis is angle A2, 170°≤A2≤210°; or, the angle between the second crystal axis and the direction perpendicular to the wafer substrate is angle B1, ‑20°≤B1≤40°, and the angle between the device direction and the first crystal axis is angle B2, ‑20°≤B2≤20°; while ensuring the low manufacturing cost of the resonant device, the operating frequency and performance of the resonant device are improved.

The invention discloses a multi-annular peripheral parallel networking antenna based on a double-scissor unit, and relates to the technical field of spaceflight, the multi-annular peripheral parallel networking antenna is composed of nineteen hexagonal prism module units with the same configuration and size, each hexagonal prism module unit is regarded as an annular peripheral antenna, and the whole antenna is formed by connecting the module units in parallel. The module units are connected through connecting units, each hexagonal prism module unit is composed of six groups of double-scissor units which are completely consistent in configuration and size, and drivers of the double-scissor units are located at six corners of each module. According to the technical scheme, reference value can be provided for design of the ultra-large-diameter paraboloid load antenna, meanwhile, decoupling in the unfolding process is facilitated, simple paraboloid antenna design is expanded, the antenna can adapt to high working frequency and has wide frequency band, and the antenna is suitable for large-scale popularization and application. And the reconnaissance resistance of the antenna is enhanced through a frequency hopping communication technology and a spread spectrum communication technology.

The embodiment of the present application discloses a method for dynamically adjusting the switching speed of a switching device and a switching device circuit. The method includes: calculating the real-time turn-off delay time between the falling edge of the driving signal of the switching device and the turn-off of the switching device; comparing the real-time turn-off delay time with the reference turn-off delay time to obtain a first comparison result; based on the first comparison result, adjusting the gate drive voltage of the switching device, adjusting the gate drive current of the switching device, and adjusting the gate discharge current of the switching device, so that the real-time turn-off delay time is within the range of the reference turn-off delay time. The circuit includes a switching device, a gate drive voltage adjustment circuit, a gate drive current adjustment circuit, and a gate discharge current adjustment circuit. The embodiment of the present application can quickly reduce the time required for the recombination of excess carriers in the n-region of the switching device.

The application discloses a method for evaluating the improvement of the high-frequency axial vibration kinetic energy of a drill bit by a rotary percussion tool, and is based on measured wellbore trajectory parameters, drill string structure parameters and rotary percussion tool characteristic parameters, considers different rotary percussion tool installation positions, utilizes a drill string dynamics analysis method to obtain a drill string axial vibration speed, calculates a drill bit high-frequency axial vibration kinetic energy index, and uses the index as an evaluation basis for the improvement degree of the drill bit kinetic energy, and determines a reasonable rotary percussion tool installation position and a working frequency based on the index.

The utility model discloses an onboard PCB coil cooker wireless charging device, which comprises a wireless charging transmitter and a wireless charging receiver, the wireless charging transmitter comprises a first PCB, a charging transmitting coil L1 is printed on the first PCB, the wireless charging receiver comprises a second PCB, a charging receiving coil L2 is printed on the second PCB, the coils are printed on the PCBs, and the wireless charging transmitter and the wireless charging receiver are electrically connected with the wireless charging receiver. Magnetic induction parameters are stable, magnetic field resonance working frequency is high, charging efficiency is high, assembling is convenient, and cost is saved.

The embodiment of the present invention provides a belt-type vacuum pulsation drying device, including a belt-type vacuum dryer, a steam compressor unit, a high-temperature heat pump unit and a vacuum unit; a heating zone is provided in the belt-type vacuum dryer, the outlet of the belt-type vacuum dryer is connected to the first outlet of the four-way reversing valve, the second outlet and the third outlet of the four-way reversing valve are respectively connected to the high-temperature heat pump unit and the steam compressor unit, and the high-temperature heat pump unit is connected to the vacuum unit; it also includes a hot water circulation system, including a heat source hot water tank, the steam compressor unit and the high-temperature heat pump unit are connected to the heat source hot water tank away from the side of the four-way reversing valve, and the outlet of the heat source hot water tank is connected to the heating zone. Through the above method, vacuum pressure pulsation and periodic circulation in the belt-type vacuum dryer with different operating methods can be realized, thereby adapting to different drying rates of different materials, and improving the utilization rate of energy in the drying system, greatly reducing energy consumption and operating costs.